CN114800252B - Surface grinding method of silicon carbide wafer - Google Patents
Surface grinding method of silicon carbide wafer Download PDFInfo
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- CN114800252B CN114800252B CN202210289430.4A CN202210289430A CN114800252B CN 114800252 B CN114800252 B CN 114800252B CN 202210289430 A CN202210289430 A CN 202210289430A CN 114800252 B CN114800252 B CN 114800252B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000005498 polishing Methods 0.000 claims abstract description 44
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 229910003460 diamond Inorganic materials 0.000 claims description 20
- 239000010432 diamond Substances 0.000 claims description 20
- 239000003921 oil Substances 0.000 claims description 17
- 239000012530 fluid Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 12
- BTGGRPUPMPLZNT-PGEUSFDPSA-N 2,2-bis[[(z)-octadec-9-enoyl]oxymethyl]butyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(CC)(COC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC BTGGRPUPMPLZNT-PGEUSFDPSA-N 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 75
- 230000008569 process Effects 0.000 description 13
- 238000005520 cutting process Methods 0.000 description 11
- 150000003376 silicon Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
Abstract
The invention belongs to the technical field of new silicon carbide materials, and particularly relates to a surface grinding method of a silicon carbide wafer, which comprises the following steps: s1: placing the front surface of a silicon carbide wafer on a wax-free pad adhered to a large grinding disc, and coarsely grinding the back surface of the silicon carbide wafer by adopting a silicon carbide grinding wheel grinding head; s2: placing the back surface of the silicon carbide wafer on a wax-free pad adhered to a large grinding disc, and coarsely grinding the front surface of the silicon carbide wafer by adopting a silicon carbide grinding wheel grinding head; s3: annealing the silicon carbide wafer treated by the steps S1 and S2; s4: and (3) performing polishing and grinding on the silicon carbide wafer processed by the step (S3). Based on the structure and the method, the grinding efficiency can be greatly improved, the grinding time is saved, the cost of modifying equipment is low, and the design and development cost is low.
Description
Technical Field
The invention belongs to the technical field of new silicon carbide materials, and particularly relates to a surface grinding method of a silicon carbide wafer.
Background
The third generation wide band gap semiconductor material represented by SiC is the core for developing high-power, high-frequency, high-temperature and strong-radiation resistant blue laser, ultraviolet detector and other technologies. The SiC crystal has the characteristics of large forbidden bandwidth, high heat conductivity, high electron saturation drift rate, high critical breakdown electric field, low dielectric constant, good chemical stability and the like, is a preferred substitute for Si in the power electronics field, and has wide application prospects in the aspects of communication, automobiles, aviation, aerospace, petroleum exploitation, national defense and the like.
Grinding is the first thinning procedure in the silicon carbide wafer processing process, and the purpose of grinding is to remove the tool marks and the surface damaged layers on the surface of the SiC slice caused in the cutting process. Due to the high hardness of SiC, the crystal surface of SiC slices must be ground using a high hardness abrasive during the grinding process. Grinding can be classified into rough grinding and fine grinding according to the process.
The rough grinding mainly removes cutting marks caused by cutting and a modified layer caused by cutting, and the abrasive particles with larger particle size are used for improving the processing efficiency. The fine grinding mainly removes a surface damaged layer left by coarse grinding, improves surface smoothness, and controls the surface shape and the thickness of a wafer, thereby facilitating subsequent polishing, and therefore, the wafer is ground by using abrasive particles with finer particle sizes.
Because of the low fracture toughness of SiC, siC is prone to cracking during grinding, making grinding of SiC wafers very difficult.
Disclosure of Invention
The invention aims to provide a surface grinding method of a silicon carbide wafer, which aims to solve the problem of difficult grinding caused by low fracture toughness of the silicon carbide wafer in the prior art.
The invention provides a surface grinding method of a silicon carbide wafer, which comprises the following steps:
s1: placing the front surface of a silicon carbide wafer on a wax-free pad adhered to a large grinding disc, and coarsely grinding the back surface of the silicon carbide wafer by adopting a silicon carbide grinding wheel grinding head;
s2: placing the back surface of the silicon carbide wafer on a wax-free pad adhered to a large grinding disc, and coarsely grinding the front surface of the silicon carbide wafer by adopting a silicon carbide grinding wheel grinding head;
s3: annealing the silicon carbide wafer treated by the steps S1 and S2;
s4: and (3) performing polishing and grinding on the silicon carbide wafer processed by the step (S3).
In the above-described method for polishing the surface of a silicon carbide wafer, it is further preferable that the step S1 of rough polishing the back surface of the silicon carbide wafer further includes: and (3) adopting an oil-based grinding fluid, taking trimethylol propane trioleate as an oil-based medium of the grinding fluid, driving the grinding large disc and the grinding head of the silicon carbide wheel to rotationally grind the back surface of the silicon carbide wafer in a differential speed until reaching a first index, wherein the second index comprises 365-385 mu m of the whole thickness of the silicon carbide wafer, and the difference value between the maximum value and the minimum value in any three-point thickness values on the silicon carbide wafer is less than or equal to 5 mu m.
In the above-described surface polishing method for a silicon carbide wafer, it is further preferable that the rough polishing of the front surface of the silicon carbide wafer in S2 further includes: and (3) adopting an oil-based grinding fluid, taking trimethylol propane trioleate as an oil-based medium of the grinding fluid, and driving the grinding large disc and the grinding head of the silicon carbide wheel to rotationally grind the front surface of the silicon carbide wafer in a differential speed until reaching a second index, wherein the second index comprises 365-385 mu m of the whole thickness of the silicon carbide wafer, and the difference value between the maximum value and the minimum value in any three-point thickness values on the silicon carbide wafer is less than or equal to 5 mu m.
In the surface polishing method for a silicon carbide wafer as described above, it is further preferable that the oil-based polishing liquid flows out from a flow passage provided in the center pillar of the polishing pad and is distributed between the wax-free pad and the diamond wheel polishing head.
In the above-described method for polishing the surface of a silicon carbide wafer, it is further preferable that the annealing treatment of the silicon carbide wafer treated with S1 and S2 in S3 includes: and (3) putting the silicon carbide wafer into an annealing furnace with the annealing temperature of 1000-1300 ℃ for 9-13 h, taking out, and cooling to room temperature in air.
In the above-described method for polishing the surface of a silicon carbide wafer, it is further preferable that the step of polishing the silicon carbide wafer treated in step S4 includes: and (3) placing the silicon carbide wafer processed in the S3 into chemical polishing equipment, and polishing the front side and the back side of the silicon carbide wafer to a third index by adopting a modified silicon solution with the particle diameter of 30-135 nm, wherein the third index comprises the whole thickness of 340-360 mu m of the wafer, and the difference value between the maximum value and the minimum value in any three-point thickness values on the wafer is less than or equal to 5 mu m.
In the above-described method for polishing the surface of a silicon carbide wafer, it is further preferable that a plurality of the wax-free pads are attached to the polishing pad, and a plurality of suction areas adapted to suction and fix the silicon carbide wafer are provided on each of the wax-free pads.
In the surface polishing method for a silicon carbide wafer as described above, it is further preferable that the silicon carbide wheel polishing head has at least one position to entirely cover one of the wax-free pads.
In the surface polishing method for a silicon carbide wafer as described above, it is further preferable that four wax-free pads are attached to the polishing pad, and three adsorption areas are provided on each of the wax-free pads.
Compared with the prior art, the invention has the following advantages:
according to the surface grinding method of the silicon carbide wafer, the diamond grinding wheel is used as the grinding head, and the hardness of diamond which is the main material of the diamond grinding wheel is higher than that of silicon carbide, so that the diamond grinding head in high-speed rotation can effectively remove the cutting marks caused by cutting and the metamorphic layer caused by cutting in the silicon carbide wafer; meanwhile, the silicon carbide wafer can be effectively fixed by the wax-free pad, so that the wafer cannot rotate along with the grinding head in the process of grinding the wafer by rotating the silicon carbide grinding wheel grinding head at a high speed, and the grinding efficiency can be ensured. Based on the structure and the method, the process can greatly improve the grinding efficiency, save the grinding time, and has lower cost of modifying equipment and lower design and development cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a grinding device according to the present invention;
FIG. 2 is a schematic diagram of the combination of a wax-free pad and a large abrasive disk.
Reference numerals illustrate:
1-grinding large disc, 2-center pillar, 3-diamond grinding wheel grinding head, 4-center rotating shaft, 5-wax-free pad and 6-adsorption area.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in the present invention will be understood in detail by those skilled in the art.
Methods of surface grinding silicon carbide wafers in some embodiments of the present invention will be described below with reference to fig. 1-2.
Referring to fig. 1-2, the surface grinding method of the silicon carbide wafer in the present embodiment includes:
s1: placing the front surface of the silicon carbide wafer on a wax-free pad 5 stuck on the grinding large disc 1, and coarsely grinding the back surface of the silicon carbide wafer by adopting a silicon carbide grinding wheel grinding head 3;
s2: the back surface of the silicon carbide wafer is placed on a wax-free pad 5 stuck on a large grinding disc 1, and the front surface of the silicon carbide wafer is roughly ground by adopting a silicon carbide grinding wheel grinding head 3;
s3: annealing the silicon carbide wafer treated by the S1 and the S2;
s4: and (3) performing polishing and grinding on the silicon carbide wafer processed by the step (S3).
Specifically, a central support column 2 is erected at the center of the large grinding disc 1 and rotates under the drive of the central support column 2, and a central rotating shaft 4 parallel to the central support column 2 is erected at the center of the diamond grinding wheel grinding head 3 and rotates under the drive of the central rotating shaft 4. During the lapping process, the lapping big disk 1 and the silicon carbide wheel lapping head 3 are rotated differentially to lap the silicon carbide wafer.
In the method, the diamond grinding wheel is adopted as the grinding head and the wax-free pad 5 in the rough grinding process, and the hardness of diamond which is the main material of the diamond grinding wheel is higher than that of silicon carbide, so that the diamond grinding head 3 in high-speed rotation can effectively remove the cutting marks caused by cutting and the deterioration layer caused by cutting in the silicon carbide wafer; meanwhile, the silicon carbide wafer can be effectively fixed by the wax-free pad 5, so that the wafer cannot rotate along with the grinding head in the process of grinding the wafer by rotating the silicon carbide grinding head 3 at a high speed, and the grinding efficiency can be ensured. Based on the structure and the method, the process can greatly improve the grinding efficiency, save the grinding time, and has lower cost of modifying equipment and lower design and development cost.
Specifically, the rough grinding of the back surface of the silicon carbide wafer in S1 further includes: the method comprises the steps of adopting an oil-based grinding fluid and using trimethylolpropane trioleate as an oil-based medium of the grinding fluid, playing roles of blending abrasive particles, cooling a workpiece, lubricating a grinding tool, cleaning and removing chips and the like in the grinding process, driving a grinding large disc 1 and a silicon grinding wheel grinding head 3 to rotationally grind the back surface of a silicon carbide wafer in a differential speed until reaching a first index, wherein the first index comprises that the overall thickness of the silicon carbide wafer is 385-400 mu m, and the difference between the maximum value and the minimum value in any three-point thickness value on the silicon carbide wafer is less than or equal to 5 mu m, namely TV3 (the difference between the thickness values of upper, middle, lower three-point thickness values and the maximum value and the minimum value in any measurement) is less than or equal to 5 mu m.
The rough grinding of the front surface of the silicon carbide wafer in S2 further includes: the method comprises the steps of adopting an oil-based grinding fluid and using trimethylolpropane trioleate as an oil-based medium of the grinding fluid, playing roles of blending abrasive particles, cooling a workpiece, lubricating a grinding tool, cleaning and removing chips and the like in the grinding process, driving a grinding large disc 1 and a silicon grinding wheel grinding head 3 to rotationally grind the front surface of a silicon carbide wafer in a differential speed until reaching a second index, wherein the second index comprises the integral thickness of the silicon carbide wafer of 365-385 mu m, and the difference between the maximum value and the minimum value in any three-point thickness value on the silicon carbide wafer is less than or equal to 5 mu m, namely TV3 (the difference between the thickness values of upper, middle, lower three-point thickness values and the maximum value and the minimum value in any measurement) is less than or equal to 5 mu m.
The annealing treatment of the silicon carbide wafer treated by the S1 and the S2 in the S3 comprises the following steps:
and (3) placing the silicon carbide wafer into an annealing furnace with the annealing temperature of 1000-1300 ℃ for 9-13 h, taking out, and cooling to room temperature in air to finish the whole annealing treatment process. In the method, the annealing treatment has the following beneficial effects: 1) The hardness of the silicon carbide wafer is reduced, and the cutting processability is improved; 2) Residual stress is eliminated, the size is stabilized, and the deformation and fission tendency are reduced; 3) The particles of the silicon carbide wafer are thinned, the prevention is adjusted, and the tissue defect is eliminated.
The step S4 of performing polishing and grinding on the silicon carbide wafer processed by the step S3 comprises the following steps:
and (3) placing the silicon carbide wafer processed in the S3 into chemical polishing equipment, and polishing the front side and the back side of the silicon carbide wafer to a third index by adopting a modified silicon solution with the particle diameter of 30-135 nm, wherein the third index comprises the whole thickness of 340-360 mu m of the silicon carbide wafer, and the difference between the maximum value and the minimum value in any three-point thickness values on the silicon carbide wafer is less than or equal to 5 mu m, namely, TV3 (the difference between the maximum value and the minimum value in any three-point thickness values is less than or equal to 5 mu m). The modified silicon solution is silane coupling agent modified silicon solution, and the action mechanism is that a part of groups in the coupling agent molecules can form strong chemical bonding with the surfaces of silicon dioxide particles in the silicon solution, and the surfaces of the silicon dioxide particles in the silicon solution can effectively improve the surface properties and the reactivity by selecting an organic functional group. The chemical polishing treatment can completely remove the damaged layer remained in the polishing process, thereby obtaining a polished surface with high quality.
In S1, S2 and S4, the oil-based polishing liquid or the modified silicon solution flows out from the flow channel provided in the center pillar 2 of the large polishing disc 1 and is distributed between the wax-free pad 5 and the diamond wheel polishing head 3. Specifically, six channels are located in the center pillar 2, and a plurality of holes are formed in the circumference of the center pillar 2, and the holes are formed in the upper surface of the large grinding disc 1, so that the oil-based grinding fluid or the modified silicon solution is suitable for being added. During the grinding process, the oil-based grinding fluid or the modified silicon solution flows out from the holes and is diffused outwards under the action of the centrifugal force of the grinding large disc 1 so as to be uniformly distributed between the diamond wheel and the wax-free pad 5.
Further, a plurality of wax-free pads 5 are adhered to the large grinding disc 1, and a plurality of adsorption areas 6 suitable for adsorbing and fixing silicon carbide wafers are arranged on each wax-free pad 5. The above arrangement is suitable for improving the polishing efficiency, and specifically, as shown in fig. 2, four wax-free pads 5 are adhered to the polishing large disc 1, and three adsorption areas 6 are provided on each wax-free pad 5.
In addition, in order to further improve the polishing efficiency, one polishing large disc 1 corresponds to a plurality of the diamond wheel polishing heads 3, and the plurality of the diamond wheel polishing heads 3 are uniformly arranged on the polishing large disc 1. Specifically, the centers of the plurality of grinding heads 3 are located on the same circumference, and the circumference and the grinding wheel 1 are concentric circles.
The diamond wheel grinding head 3 has at least one position to completely cover a wax-free pad 5. Preferably, the diameter of the diamond wheel grinding head 3 is equal to or larger than the diameter of the wax-free pad 5, the centers of the wax-free pads 5 are positioned on the same circumference, and the circumference is concentric with the circumference of the grinding large disc 1 and the diamond wheel grinding head 3.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (4)
1. A surface grinding method of a silicon carbide wafer, comprising:
s1: placing the front surface of a silicon carbide wafer on a wax-free pad adhered to a large grinding disc, and coarsely grinding the back surface of the silicon carbide wafer by adopting a silicon carbide grinding wheel grinding head;
s2: placing the back surface of the silicon carbide wafer on a wax-free pad adhered to a large grinding disc, and coarsely grinding the front surface of the silicon carbide wafer by adopting a silicon carbide grinding wheel grinding head;
s3: annealing the silicon carbide wafer treated by the steps S1 and S2;
s4: performing polishing and grinding on the silicon carbide wafer processed by the step S3;
the rough grinding of the back surface of the silicon carbide wafer in S1 further includes: adopting an oil-based grinding fluid, taking trimethylolpropane trioleate as an oil-based medium of the grinding fluid, and driving the grinding large disc and the silicon carbide wheel grinding head to rotationally grind the back surface of the silicon carbide wafer in a differential speed manner until reaching a first index, wherein the first index comprises that the overall thickness of the silicon carbide wafer is 385-400 mu m, and the difference value between the maximum value and the minimum value in any three-point thickness values on the silicon carbide wafer is less than or equal to 5 mu m;
the rough grinding of the front surface of the silicon carbide wafer in S2 further includes: adopting an oil-based grinding fluid, taking trimethylol propane trioleate as an oil-based medium of the grinding fluid, and driving the grinding large disc and the grinding head of the silicon carbide wheel to rotationally grind the front surface of the silicon carbide wafer in a differential speed until reaching a second index, wherein the second index comprises 365-385 mu m of the whole thickness of the silicon carbide wafer, and the difference value between the maximum value and the minimum value in any three-point thickness values on the silicon carbide wafer is less than or equal to 5 mu m;
the oil-based grinding fluid flows out from a flow passage arranged in the center support column of the grinding large disc and is distributed between the wax-free pad and the grinding head of the diamond grinding wheel;
the annealing treatment of the silicon carbide wafer treated by the steps S1 and S2 in the step S3 comprises the following steps:
putting the silicon carbide wafer into an annealing furnace with the annealing temperature of 1000-1300 ℃ for 9-13 h, taking out, and putting the silicon carbide wafer into air for cooling to room temperature;
the step S4 of performing polishing and grinding on the silicon carbide wafer processed by the step S3 comprises the following steps:
and (3) placing the silicon carbide wafer processed in the S3 into chemical polishing equipment, and polishing the front side and the back side of the silicon carbide wafer to a third index by adopting a modified silicon solution with the particle diameter of 30-135 nm, wherein the third index comprises the whole thickness of 340-360 mu m of the wafer, and the difference value between the maximum value and the minimum value in any three-point thickness values on the wafer is less than or equal to 5 mu m.
2. The method for polishing a surface of a silicon carbide wafer according to claim 1, wherein,
and a plurality of wax-free pads are stuck on the large grinding disc, and each wax-free pad is provided with a plurality of adsorption areas which are suitable for adsorbing and fixing the silicon carbide wafer.
3. The method for polishing a surface of a silicon carbide wafer according to claim 2, wherein,
at least one position of the diamond wheel grinding head completely covers one wax-free pad.
4. The method for polishing a surface of a silicon carbide wafer according to claim 2, wherein,
four wax-free pads are stuck on the large grinding disc, and three adsorption areas are arranged on each wax-free pad.
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