CN112692722A - Polishing apparatus, method of processing polishing disk, and method of processing silicon carbide wafer - Google Patents
Polishing apparatus, method of processing polishing disk, and method of processing silicon carbide wafer Download PDFInfo
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- CN112692722A CN112692722A CN202011554118.0A CN202011554118A CN112692722A CN 112692722 A CN112692722 A CN 112692722A CN 202011554118 A CN202011554118 A CN 202011554118A CN 112692722 A CN112692722 A CN 112692722A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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Abstract
The invention discloses a grinding device, a processing method of a grinding disc and a processing method of a silicon carbide wafer, wherein the grinding device comprises: the first rotating equipment is used for installing a grinding wheel and can drive the grinding wheel to rotate, or the first rotating equipment is used for supporting a carrier disc and can drive the supporting carrier disc to rotate; the support carrier plate is used for mounting a silicon carbide wafer; and the second rotating equipment is used for placing the polishing disc and can drive the polishing disc to rotate along the central axis of the polishing disc. By applying the technical scheme provided by the invention, the irregular geometric texture is added on the surface of the grinding disc, so that the surface of the silicon carbide wafer is uniformly ground when the surface of the silicon carbide wafer is mechanically ground or polished, specific shallow and wide grooves at specific positions are weakened, the surface quality of the silicon carbide wafer is improved, and the yield is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a polishing device, a processing method of a polishing disc and a processing method of a silicon carbide wafer.
Background
With the continuous expansion of the scale of semiconductor equipment, the requirement on the process complexity is higher and higher. Silicon carbide wafers as third-generation semiconductor materials are excellent in heat dissipation and high temperature and high pressure resistance, but the silicon carbide wafers are still not processed in a mature process until now due to the very high hardness of silicon carbide.
The silicon carbide wafer is generally ground by mechanical or chemical mechanical grinding, but the grinding disc used for grinding is usually formed by die pressing or turning, and the surface of the disc surface of the grinding disc produced by the method has certain regular geometric mechanical texture residues, so that the surface quality of the silicon carbide wafer is influenced, and the production yield is reduced.
Disclosure of Invention
In view of the above, the present invention provides a polishing apparatus, a processing method of a polishing pad, and a processing method of a silicon carbide wafer, which can improve the surface quality of the silicon carbide wafer and the yield.
In order to achieve the above purpose, the invention provides the following technical scheme:
an abrading apparatus, the abrading apparatus comprising:
the first rotating equipment is used for installing a grinding wheel and can drive the grinding wheel to rotate, or the first rotating equipment is used for installing a supporting carrier disc and can drive the supporting carrier disc to rotate; the support carrier plate is used for mounting a silicon carbide wafer;
and the second rotating equipment is used for placing the polishing disc and can drive the polishing disc to rotate along the central axis of the polishing disc.
Preferably, in the polishing apparatus described above, the polishing apparatus is configured to form a polishing texture on a surface of the polishing disc facing away from the second rotating apparatus;
the first rotating equipment is used for installing the grinding wheel, so that the grinding wheel is abutted against the surface of the polishing disc, a first pressure is applied to the polishing disc, and the grinding wheel is controlled to rotate at a first rotating speed;
wherein the second rotating device controls the polishing disk to rotate at a second rotational speed when the surface of the polishing disk abuts against the grinding wheel.
Preferably, in the above polishing apparatus, the polishing apparatus is configured to polish a silicon carbide wafer based on a polishing disk having the polishing texture;
the first rotating equipment is provided with the supporting carrier disc, the silicon carbide wafer is fixed on the surface of the supporting carrier disc facing the polishing disc, the first rotating equipment drives the supporting carrier disc to abut against the surface of the polishing disc, second pressure is applied to the polishing disc, and the supporting carrier disc is controlled to rotate at a third rotating speed;
wherein the second rotating device controls the polishing disk to rotate at a fourth rotational speed when the surface of the polishing disk abuts against the silicon carbide wafer.
Preferably, in the above polishing apparatus, the first rotating apparatus includes: the pressure head is provided with a mounting groove, and the mounting groove is used for mounting and fixing the grinding wheel or the support carrier disc.
Preferably, in the above grinding apparatus, the grinding wheel includes:
a grinding wheel base having opposing first and second surfaces;
wherein the first surface is provided with a convex part for installing and fixing the first rotating equipment, and the second surface is provided with a plurality of sanding blocks.
Preferably, in the above polishing apparatus, the polishing block is a cylinder, one end of the polishing block is fixed in the grinding wheel base, and the other end of the polishing block is exposed out of the grinding wheel base.
Preferably, in the above grinding apparatus, an end surface of the grinding block exposed out of the grinding wheel base has diamond particles, silicon carbide particles, or metal particles.
Preferably, in the above polishing apparatus, the grinding wheel base is a silicon carbide base, a ceramic base or a metal base.
Preferably, in the above described grinding apparatus, the support carrier disc has third and fourth opposed surfaces;
wherein the third surface has a boss for mounting and fixing on the first rotating device, and the fourth surface has at least one groove for mounting and fixing a silicon carbide wafer.
Preferably, in the above polishing apparatus, the polishing disc is a copper polishing disc, an iron polishing disc or an alloy polishing disc.
The invention also provides a machining method of the grinding disc, the machining method adopts the grinding equipment as any one of the grinding equipment, and the machining method comprises the following steps:
a grinding wheel is arranged on the first rotating equipment, and a polishing disc is arranged on the second rotating equipment;
pressing the grinding wheel on the surface of the grinding disc, and applying first pressure to the grinding disc;
the grinding wheel is driven to rotate by the first rotating device, and the grinding wheel is driven to rotate by the second rotating device so as to grind the surface of the grinding disc, and grinding textures are formed on the surface.
Preferably, in the above processing method, the grinding wheel has a first rotation speed, the polishing disc has a second rotation speed, and a ratio of the first rotation speed to the second rotation speed is 1.1: 1 to 1.3: 1;
the first pressure is 10Kg-50 Kg.
The present invention also provides a processing method of a silicon carbide wafer, the processing method using the polishing apparatus according to any one of the above, the processing method comprising:
mounting a support carrier disc on the first rotating device, wherein a silicon carbide wafer is fixedly mounted on the surface of the support carrier disc, and a polishing disc with polishing textures is mounted on the second rotating device;
pressing the silicon carbide wafer on the surface of the polishing disc, and applying a second pressure to the polishing disc;
the first rotating device drives the supporting carrier disc to rotate, and the second rotating device drives the polishing disc to rotate, so that the silicon carbide wafer is ground through the area, with the polishing texture, of the polishing disc.
Preferably, in the above processing method, the support carrier disc has a third rotation speed, the polishing disc has a fourth rotation speed, and a ratio of the first rotation speed to the second rotation speed is 1.1: 1 to 1.5: 1;
the second pressure is 50Kg-180 Kg.
As can be seen from the above description, in the polishing apparatus, the processing method of the polishing disk, and the processing method of the silicon carbide wafer according to the technical solutions of the present invention, the grinding wheel or the support carrier disk is mounted on the first rotating apparatus, the polishing disk is mounted on the second rotating apparatus, the grinding wheel or the support carrier disk is driven to rotate by the first rotating apparatus, and the polishing disk is driven to rotate by the second rotating apparatus, so as to polish the surface of the polishing disk, and the surface of the polishing disk forms irregular geometric textures. According to the scheme of the invention, the irregular geometric texture is added on the surface of the grinding disc, so that the surface of the silicon carbide wafer is uniformly ground when the surface of the silicon carbide wafer is mechanically ground or polished, a specific shallow and wide groove at a specific position is weakened, the surface quality of the silicon carbide wafer is improved, and the yield is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
The structure, proportion, size and the like shown in the drawings are only used for matching with the content disclosed in the specification, so that the person skilled in the art can understand and read the description, and the description is not used for limiting the limit condition of the implementation of the invention, so the method has no technical essence, and any structural modification, proportion relation change or size adjustment still falls within the scope of the technical content disclosed by the invention without affecting the effect and the achievable purpose of the invention.
Fig. 1 is a sectional view of a polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a cut-away view of another grinding apparatus provided in accordance with an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a first rotating apparatus provided in an embodiment of the present invention;
FIG. 4 is a cut-away view of a grinding wheel according to an embodiment of the present invention;
FIG. 5 is a top view of a grinding wheel provided in accordance with an embodiment of the present invention;
FIG. 6 is a schematic view of a method of machining a polishing pad according to an embodiment of the present invention;
FIG. 7 is a schematic view of a method for processing a silicon carbide wafer according to an embodiment of the present invention.
Detailed Description
Embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the application are shown, and in which it is to be understood that the embodiments described are merely illustrative of some, but not all, of the embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Silicon carbide wafers as third-generation semiconductor materials are excellent in heat dissipation and high temperature and high pressure resistance, but the silicon carbide wafers are still not processed in a mature process until now due to the very high hardness of silicon carbide.
The silicon carbide wafer is generally ground by mechanical or chemical mechanical grinding, but the grinding disc used for grinding is usually formed by die pressing or turning, and the surface of the disc surface of the grinding disc produced by the method has certain regular geometric mechanical texture residues. In the polishing process of the silicon carbide wafer, the mechanical textures can cause the surface of the silicon carbide wafer to form 'shallow grooves', the 'shallow grooves' are difficult to remove in the subsequent wafer processing process, and the quality of epitaxial coating of the silicon carbide wafer is directly influenced by the existence of the 'shallow grooves', so that the production yield is reduced.
Therefore, in order to solve the above-mentioned problems, the present invention provides a polishing apparatus, a processing method of a polishing disk, and a processing method of a silicon carbide wafer, the polishing apparatus comprising:
the first rotating equipment is used for installing a grinding wheel and can drive the grinding wheel to rotate, or the first rotating equipment is used for installing a supporting carrier disc and can drive the supporting carrier disc to rotate; the support carrier plate is used for mounting a silicon carbide wafer;
and the second rotating equipment is used for placing the polishing disc and can drive the polishing disc to rotate along the central axis of the polishing disc.
As can be seen from the above description, in the polishing apparatus, the processing method of the polishing disk, and the processing method of the silicon carbide wafer according to the technical solutions of the present invention, the grinding wheel or the support carrier disk is mounted on the first rotating apparatus, the polishing disk is mounted on the second rotating apparatus, the grinding wheel or the support carrier disk is driven to rotate by the first rotating apparatus, and the polishing disk is driven to rotate by the second rotating apparatus, so as to polish the surface of the polishing disk, and the surface of the polishing disk forms irregular geometric textures. According to the scheme of the invention, the irregular geometric texture is added on the surface of the grinding disc, so that the surface of the silicon carbide wafer is uniformly ground when the surface of the silicon carbide wafer is mechanically ground or polished, a specific shallow and wide groove at a specific position is weakened, the surface quality of the silicon carbide wafer is improved, and the yield is improved.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1 and 2, fig. 1 is a sectional view of a polishing apparatus according to an embodiment of the present invention, and fig. 2 is a sectional view of another polishing apparatus according to an embodiment of the present invention.
As shown in fig. 1 and 2, the grinding apparatus includes:
the first rotating device 11 is used for installing a grinding wheel 12 and can drive the grinding wheel 12 to rotate, or the first rotating device 11 is used for installing a support carrier disc 21 and can drive the support carrier disc 21 to rotate; the support carrier plate 21 is used for mounting a silicon carbide wafer 22;
a second rotating device 13, said second rotating device 13 being intended to house a grinding disc 28 able to drive said grinding disc 28 in rotation along its central axis.
Wherein the polishing disc 28 may be a copper polishing disc, an iron polishing disc, or an alloy polishing disc.
In the embodiment of the present invention, the polishing device is configured to form a polishing texture on a surface of the polishing disc 28 facing away from the second rotating device 13, where the polishing texture may be an irregular geometric texture; the first rotating device 11 mounts the grinding wheel 12 so that the grinding wheel 12 abuts against the surface of the grinding disc 28, applies a first pressure to the grinding disc 28, and controls the grinding wheel 12 to rotate at a first rotation speed; wherein the second rotating device 13 controls the grinding disc 28 to rotate at a second rotational speed when the surface of the grinding disc 28 abuts against the grinding wheel 12.
Further, the polishing apparatus is used for polishing the silicon carbide wafer 22 based on the polishing disk 28 having irregular geometric texture; as shown in fig. 2, the first rotating device 11 mounts the support carrier disc 21, the silicon carbide wafer 22 is fixed on the surface of the support carrier disc 21 facing the polishing disc 28, the first rotating device 11 brings the support carrier disc 21 into contact with the surface of the polishing disc 28, applies a second pressure to the polishing disc 28, and controls the support carrier disc 21 to rotate at a third rotating speed; wherein the second rotating device 13 controls the polishing disk 28 to rotate at a fourth rotational speed when the surface of the polishing disk 28 abuts against the silicon carbide wafer 22.
In an embodiment of the invention, the support carrier disc 21 has third and fourth opposite surfaces; wherein the third surface has a projection for mounting and fixing on the first rotating device 11, and the fourth surface has at least one groove for mounting and fixing the silicon carbide wafer 22. As described in the subsequent embodiments, the projections of the surface of the support carrier plate 21 can be fitted into the fitting grooves 26 of the indenter 25.
In the mode shown in fig. 1, a grinding wheel 12 may be mounted on a first rotating device 11, a grinding disc 28 may be mounted on a second rotating device 13, and a first pressure may be applied to the grinding disc 28 to tightly attach the grinding wheel 12 to the surface of the grinding disc 28, the first rotating device 11 may drive the grinding wheel 12 to rotate at a first rotation speed, and the second rotating device 13 may drive the grinding disc 28 to rotate at a second rotation speed to grind the surface of the grinding disc 28, so that the surface of the grinding disc 28 may form irregular geometric textures, so that the surface of the silicon carbide wafer may be uniformly ground during mechanical grinding or polishing, a specific shallow and wide groove at a specific position may be weakened, the surface quality of the silicon carbide wafer may be improved, and the yield may be improved.
In the manner shown in fig. 2, a supporting carrier plate 21 may be mounted on the first rotating device 11, a polishing plate 28 may be mounted on the second rotating device 13, and a second pressure may be applied to the polishing plate 28, so as to closely attach the supporting carrier plate 21 to the surface of the polishing plate 28, the supporting carrier plate 21 is driven to rotate at a third rotation speed by the first rotating device 11, and the polishing plate 28 is driven to rotate at a fourth rotation speed by the second rotating device 13, so as to polish the surface of the polishing plate 28, so that the surface of the polishing plate 28 forms irregular geometric textures, so that the surface of the silicon carbide wafer 22 is uniformly ground during mechanical grinding or polishing, a specific shallow and wide groove appearing at a specific position is weakened, the surface quality of the silicon carbide wafer 22 is improved, and the yield is improved.
In the present embodiment, the first rotating device 11 comprises a ram 25 as shown in fig. 3.
As shown in fig. 3, fig. 3 is a schematic structural diagram of a first rotating apparatus according to an embodiment of the present invention. The first rotating apparatus 11 includes: a pressure head 25, wherein the pressure head 25 is provided with a mounting groove 26, and the mounting groove 26 is used for mounting and fixing the grinding wheel 12 or the support carrier disc 21.
It should be noted that the first rotating apparatus 11 further includes: a mechanical arm (not shown in the figure) which can move in the vertical direction and can be driven by a hydraulic device to apply required pressure to the polishing disc 28, wherein the end part of the mechanical arm is provided with a motor, a rotating shaft of the motor is fixed with the pressure head 25, and the pressure head 25 can be connected with the support carrier disc 21 or the grinding wheel 12.
Referring to fig. 4 and 5, fig. 4 is a cut view of a grinding wheel according to an embodiment of the present invention, and fig. 5 is a plan view of the grinding wheel according to an embodiment of the present invention.
As shown in fig. 4 and 5, the grinding wheel 12 includes: a grinding wheel base 31, said grinding wheel base 31 having opposing first and second surfaces; the first surface is provided with a convex part for being fixedly installed on the first rotating device, the second surface is provided with a plurality of sanding blocks 32, and the sanding blocks 32 can be arranged on the grinding wheel base 31 in a certain array. The grinding wheel base 31 may be a silicon carbide base, a ceramic base or a metal base. The raised portion of the surface of the grinding wheel 12 can be fitted into the fitting recess 26 of the indenter 25.
The sanding block 32 may be a cylinder, one end of the cylinder is fixed in the grinding wheel base 31, and the other end of the cylinder is exposed out of the grinding wheel base 31. The end face of the grinding block 32 exposed out of the grinding wheel base 31 has diamond particles, silicon carbide particles or metal particles.
According to the above description, the grinding equipment provided by the technical scheme of the invention has the advantages that the irregular geometric texture is added on the surface of the grinding disc, so that the surface of the silicon carbide wafer is uniformly ground when the surface of the silicon carbide wafer is mechanically ground or polished, specific shallow and wide grooves at specific positions are weakened, the surface quality of the silicon carbide wafer is improved, and the yield is improved.
Based on the above embodiment, another embodiment of the present invention further provides a processing method of a polishing disc, and the processing method adopts the polishing apparatus in the above embodiment, so that the surface quality of a silicon carbide wafer can be improved, and the yield can be improved. As shown in fig. 6, fig. 6 is a schematic view of a machining method of a polishing disc according to an embodiment of the present invention, where the machining method includes:
step S11: a grinding wheel is arranged on the first rotating equipment, and a polishing disc is arranged on the second rotating equipment;
step S12: pressing the grinding wheel on the surface of the grinding disc, and applying first pressure to the grinding disc;
step S13: the grinding wheel is driven to rotate by the first rotating device, and the grinding disc is driven to rotate by the second rotating device so as to grind the surface of the grinding disc, and grinding textures are formed on the surface. The grinding time can be determined according to the requirements of the disc type and the depth of the groove.
It should be noted that, the diameter of emery wheel is less than the radius of the dish of polishing, and when emery wheel and the surperficial butt of the dish of polishing, emery wheel edge and the dish center of polishing have the interval of predetermineeing for finally form an annular district of polishing, the geometrical texture of polishing that has irregular arrangement in this district of polishing.
Wherein the grinding wheel has a first rotational speed, the polishing disc has a second rotational speed, and a ratio of the first rotational speed to the second rotational speed may be 1.1: 1 to 1.3: 1; the first pressure may be 10Kg-50 Kg.
In the embodiment of the invention, the grinding disc containing the spiral line is produced by using the metal disc reverse die, and the cutter shaft is adjusted to present a certain inclination proportion, so that the disc shape of the grinding disc is ensured to meet the actual processing requirement. In the production process, a silicon carbide wafer is processed by using a polishing disc, firstly, the polishing disc is subjected to turning surface treatment to enable the disc shape on the surface of the polishing disc to meet the actual production requirement, after the surface shape is processed, a grinding wheel for polishing is placed on the polishing disc, the load pressure is increased, the set pressure is 10kg-50kg, the rotating speed of the grinding wheel is 12-40 rpm, the rotating speed of the polishing disc is 10-30 rpm, the polishing time is set to be 5-30 minutes, a polishing program is started, the wafer meeting the requirement can be processed, and after the program is finished, the disc surface is washed by water for later use.
According to the processing method of the grinding disc provided by the technical scheme of the invention, the grinding wheel is arranged on the first rotating device, the grinding disc is arranged on the second rotating device, the grinding wheel is abutted against the surface of the grinding disc, first pressure is applied to the grinding disc, the grinding wheel is driven to rotate at a first rotating speed by the first rotating device, the grinding disc is driven to rotate at a second rotating speed by the second rotating device so as to grind the surface of the grinding disc, irregular geometric textures are formed on the surface of the grinding disc, the surface of the silicon carbide wafer is uniformly ground during mechanical grinding or polishing, specific shallow and wide grooves at specific positions are weakened, the surface quality of the silicon carbide wafer is improved, and the yield is improved.
Based on the above embodiment, another embodiment of the present invention further provides a processing method of a silicon carbide wafer, and the processing method adopts the polishing apparatus described in the above embodiment, so as to improve the surface quality of the silicon carbide wafer and improve the yield. As shown in fig. 7, fig. 7 is a schematic view of a processing method of a silicon carbide wafer according to an embodiment of the present invention, the processing method includes:
step S21: mounting a support carrier disc on the first rotating device, wherein a silicon carbide wafer is fixedly mounted on the surface of the support carrier disc, and a polishing disc with polishing textures is mounted on the second rotating device;
step S22: pressing the silicon carbide wafer on the surface of the polishing disc, and applying a second pressure to the polishing disc; namely, the silicon carbide wafer is arranged in the polishing area, so that polishing can be carried out through polishing textures, and the polishing time can be specifically determined according to the disc type and the groove depth as required.
Step S23: the first rotating device drives the supporting carrier disc to rotate, and the second rotating device drives the polishing disc to rotate, so that the silicon carbide wafer is ground through the area, with the polishing texture, of the polishing disc.
Wherein the support carrier disc has a third rotational speed and the polishing disc has a fourth rotational speed, and a ratio of the first rotational speed to the second rotational speed may be 1.1: 1 to 1.5: 1; the second pressure may be 50Kg to 180 Kg.
In the embodiment of the invention, in the production process, a grinding disc is used for processing the silicon carbide wafer, firstly, the grinding disc is subjected to surface turning treatment to enable the disc shape on the surface of the grinding disc to meet the actual production requirement, after the surface type treatment is finished, a supporting carrier disc for grinding is placed on the grinding disc, the silicon carbide wafer is fixed on the supporting carrier disc, the silicon carbide wafer is attached to the surface of the grinding disc, the load pressure is increased, the set pressure is 50Kg-180Kg, the rotating speed of the supporting carrier disc is 40-88 rpm, the rotating speed of the grinding disc is 30-80 rpm, the grinding time is set to be 90-240 minutes, and the processing program is started, so that the silicon carbide wafer meeting the requirement can be processed.
According to the processing method of the silicon carbide wafer provided by the technical scheme of the invention, the supporting carrier disc is arranged on the first rotating device, the polishing disc is arranged on the second rotating device, the supporting carrier disc is driven to rotate at the third rotating speed by the first rotating device, and the polishing disc is driven to rotate at the fourth rotating speed by the second rotating device so as to polish the surface of the polishing disc, so that irregular geometric textures are formed on the surface of the polishing disc, the surface of the silicon carbide wafer is uniformly ground during mechanical grinding or polishing, specific shallow and wide grooves formed in specific positions are weakened, the surface quality of the silicon carbide wafer is improved, and the yield is improved.
The embodiments in the present description are described in a progressive manner, or in a parallel manner, or in a combination of a progressive manner and a parallel manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments can be referred to each other. For the processing method disclosed by the embodiment, as the processing method corresponds to the grinding equipment disclosed by the embodiment, the description is simple, and relevant points can be referred to the partial description of the grinding equipment.
It should be noted that in the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only used for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (14)
1. An abrading apparatus, characterized in that the abrading apparatus comprises:
the first rotating equipment is used for installing a grinding wheel and can drive the grinding wheel to rotate, or the first rotating equipment is used for installing a supporting carrier disc and can drive the supporting carrier disc to rotate; the support carrier plate is used for mounting a silicon carbide wafer;
and the second rotating equipment is used for placing the polishing disc and can drive the polishing disc to rotate along the central axis of the polishing disc.
2. The abrading apparatus of claim 1, wherein the abrading apparatus is configured to form an abrading texture on a surface of the abrading disc facing away from the second rotating apparatus;
the first rotating equipment is used for installing the grinding wheel, so that the grinding wheel is abutted against the surface of the polishing disc, a first pressure is applied to the polishing disc, and the grinding wheel is controlled to rotate at a first rotating speed;
wherein the second rotating device controls the polishing disk to rotate at a second rotational speed when the surface of the polishing disk abuts against the grinding wheel.
3. The polishing apparatus according to claim 2, wherein the polishing apparatus is configured to polish a silicon carbide wafer based on a polishing disk having the polishing texture;
the first rotating equipment is provided with the supporting carrier disc, the silicon carbide wafer is fixed on the surface of the supporting carrier disc facing the polishing disc, the first rotating equipment drives the supporting carrier disc to abut against the surface of the polishing disc, second pressure is applied to the polishing disc, and the supporting carrier disc is controlled to rotate at a third rotating speed;
wherein the second rotating device controls the polishing disk to rotate at a fourth rotational speed when the surface of the polishing disk abuts against the silicon carbide wafer.
4. The sharpening apparatus of claim 1, wherein the first rotating apparatus comprises: the pressure head is provided with a mounting groove, and the mounting groove is used for mounting and fixing the grinding wheel or the support carrier disc.
5. The grinding apparatus of claim 1, wherein the grinding wheel comprises:
a grinding wheel base having opposing first and second surfaces;
wherein the first surface is provided with a convex part for installing and fixing the first rotating equipment, and the second surface is provided with a plurality of sanding blocks.
6. The sanding apparatus of claim 5, wherein the sanding block is cylindrical with one end fixed in the wheel base and the other end exposed from the wheel base.
7. The grinding apparatus as claimed in claim 6, wherein the end face of the grinding block exposed from the grinding wheel base has diamond particles, silicon carbide particles or metal particles.
8. The abrading apparatus of claim 5, wherein the wheel base is a silicon carbide base, a ceramic base, or a metal base.
9. The abrading apparatus of claim 1, wherein the support carrier disk has third and fourth opposing surfaces;
wherein the third surface has a boss for mounting and fixing on the first rotating device, and the fourth surface has at least one groove for mounting and fixing a silicon carbide wafer.
10. The abrading apparatus of claim 1, wherein the abrading disc is a copper, iron or alloy abrading disc.
11. A method of machining a grinding disc, characterized in that the method of machining uses the grinding apparatus according to any one of claims 1 to 10, the method of machining comprising:
a grinding wheel is arranged on the first rotating equipment, and a polishing disc is arranged on the second rotating equipment;
pressing the grinding wheel on the surface of the grinding disc, and applying first pressure to the grinding disc;
the grinding wheel is driven to rotate by the first rotating device, and the grinding disc is driven to rotate by the second rotating device so as to grind the surface of the grinding disc, and grinding textures are formed on the surface.
12. The machining method according to claim 11, wherein the grinding wheel has a first rotational speed and the polishing disc has a second rotational speed, and a ratio of the first rotational speed to the second rotational speed is 1.1: 1 to 1.3: 1;
the first pressure is 10Kg-50 Kg.
13. A processing method of a silicon carbide wafer, characterized in that the processing method employs the polishing apparatus according to any one of claims 1 to 10, the processing method comprising:
mounting a support carrier disc on the first rotating device, wherein a silicon carbide wafer is fixedly mounted on the surface of the support carrier disc, and a polishing disc with polishing textures is mounted on the second rotating device;
pressing the silicon carbide wafer on the surface of the polishing disc, and applying a second pressure to the polishing disc;
the first rotating device drives the supporting carrier disc to rotate, and the second rotating device drives the polishing disc to rotate, so that the silicon carbide wafer is ground through the area, with the polishing texture, of the polishing disc.
14. The machining method according to claim 13, characterized in that said support carrier disc has a third rotation speed and said grinding disc has a fourth rotation speed, the ratio of said first rotation speed to said second rotation speed being 1.1: 1 to 1.5: 1;
the second pressure is 50Kg-180 Kg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011554118.0A CN112692722A (en) | 2020-12-24 | 2020-12-24 | Polishing apparatus, method of processing polishing disk, and method of processing silicon carbide wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011554118.0A CN112692722A (en) | 2020-12-24 | 2020-12-24 | Polishing apparatus, method of processing polishing disk, and method of processing silicon carbide wafer |
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| CN112692722A true CN112692722A (en) | 2021-04-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114800252A (en) * | 2022-03-23 | 2022-07-29 | 浙江富芯微电子科技有限公司 | Surface grinding method of silicon carbide wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114800252A (en) * | 2022-03-23 | 2022-07-29 | 浙江富芯微电子科技有限公司 | Surface grinding method of silicon carbide wafer |
| CN114800252B (en) * | 2022-03-23 | 2024-03-19 | 浙江富芯微电子科技有限公司 | Surface grinding method of silicon carbide wafer |
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