CN110238751A - Sapphire wafer abrasive disk and grinding device - Google Patents
Sapphire wafer abrasive disk and grinding device Download PDFInfo
- Publication number
- CN110238751A CN110238751A CN201910621776.8A CN201910621776A CN110238751A CN 110238751 A CN110238751 A CN 110238751A CN 201910621776 A CN201910621776 A CN 201910621776A CN 110238751 A CN110238751 A CN 110238751A
- Authority
- CN
- China
- Prior art keywords
- abrasive disk
- abrasive
- sapphire wafer
- areas
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to sapphire technical field of processing equipment, a kind of sapphire wafer abrasive disk and grinding device are provided, the sapphire wafer abrasive disk, the upper surface of the abrasive disk is plane, and include at least two abrasive areas on the upper surface, the surface hardness of at least two abrasive areas is different.Sapphire wafer abrasive disk of the invention, on the one hand the abrasive areas different by least two surface hardnesses of setting, so that sapphire wafer carries out rough lapping using the relatively high abrasive areas of surface hardness in grinding initial stage, then, the abrasive areas for recycling surface hardness relatively low carries out smooth grinding, to reduce surface damage while improving material removing rate, on the other hand, rough lapping and smooth grinding can be carried out to sapphire wafer by not needing replacement abrasive disk, improve processing efficiency, simultaneously, it avoids that sapphire wafer is caused to damage during replacing abrasive disk, yield rate is provided.
Description
Technical field
The present invention relates to sapphire technical field of processing equipment, in particular to a kind of sapphire wafer abrasive disk and grinding dress
It sets.
Background technique
Sapphire single-crystal, has that hardness is high, translucency is good, wearability is high, chemical stability is good, heat conductivity, electromagnetism are exhausted
The features such as edge, excellent mechanical characteristic, is widely regarded window and sapphire wafer material is applied to national defense industry tip section
Skill research and civil field.
Sapphire brittleness is big, is typical difficult-to-machine material, currently, the preparation of sapphire wafer mainly includes slice, puts down
The processes such as whole and polishing.Generated cut mark during removal line is cut mainly is ground by free abrasive in smooth processing,
And more even curface is obtained, a good basis is provided for subsequent polishing.
But sapphire wafer is carried out in planarization process using free abrasive, using the high grinding of surface hardness
When disk is as processing disk, workpiece material removal rate is high, but easily causes scratch, micro-crack, lattice position in wafer surface and sub-surface
Wrong equivalent damage, causes wafer scrap；When using the low abrasive disk of surface hardness as processing disk, the surfaces such as workpiece material crackle are lacked
It falls into and sub-surface damage is less, but material removing rate is low, process time, the low surface damage and height of sapphire wafer attrition process
Material removing rate is difficult to balance.
Summary of the invention
In view of this, the present invention is directed to propose a kind of sapphire wafer abrasive disk and grinding device, the sapphire wafer are ground
Mill polishes to sapphire wafer by the abrasive disk using different surfaces hardness, makes to balance sapphire wafer attrition process
Low surface damage and high material removing rate.
In order to achieve the above objectives, one aspect of the present invention provides a kind of sapphire wafer abrasive disk, the upper table of the abrasive disk
Face is plane, and includes at least two abrasive areas on the upper surface, and the surface hardness of at least two abrasive areas is not
Together.
Preferably, the shape of the abrasive areas includes annulus, is arranged concentrically between the abrasive areas.
Preferably, two adjacent abrasive areas are greater than remote close to the surface hardness of the abrasive areas in the center of circle
The surface hardness of the abrasive areas from the center of circle.
Preferably, the abrasive disk includes red copper abrasive disk, copper-based Silica abrasive disk and tin abrasive disk three grindings
Region.
Preferably, the red copper abrasive disk, the copper-based Silica abrasive disk and the tin abrasive disk are set gradually.
Preferably, the red copper abrasive disk, the copper-based Silica abrasive disk and the tin abrasive disk are with the red copper
It is arranged centered on abrasive disk.
Preferably, the volume fraction of silica is not more than 10% in the copper-based Silica abrasive disk.Meanwhile this hair
Bright also to provide a kind of grinding device, the grinding device includes sapphire wafer abrasive disk of the present invention.
Preferably, the grinding device further includes sample tray and translation component, and the sample tray is mounted on the translation group
So that the translation component drives the sample tray to move horizontally on part.
Preferably, the grinding device further includes grinding coil motor and load sample coil motor, the rotation of the grinding coil motor
Axis is connect with the center of circle of the abrasive disk, and the rotation axis of the load sample coil motor is connect with the center of circle of the sample tray.
Compared with the existing technology, sapphire wafer abrasive disk of the invention is on the one hand hard by least two surfaces of setting
Different abrasive areas is spent, so that sapphire wafer is carried out slightly in grinding initial stage using the relatively high abrasive areas of surface hardness
Grinding, then, the abrasive areas for recycling surface hardness relatively low carry out smooth grinding, while improving material removing rate
Surface damage is reduced, on the other hand, rough lapping and smooth grinding can be carried out to sapphire wafer by not needing replacement abrasive disk, be improved
Processing efficiency, meanwhile, it avoids that sapphire wafer is caused to damage during replacing abrasive disk, yield rate is provided.
Other features and advantages of the present invention will the following detailed description will be given in the detailed implementation section.
Detailed description of the invention
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention
It applies mode and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of grinding device of the invention；
Fig. 2 is the structural schematic diagram of another angle of grinding device of the invention；
Fig. 3 is the main view of grinding device of the invention；
Fig. 4 is the top view of grinding device of the invention；
Fig. 5 is the structural schematic diagram of sapphire wafer abrasive disk of the invention.
Description of symbols:
1 abrasive disk, 2 sample tray
3 translation components 4 grind coil motor
5 load sample coil motor, 11 red copper abrasive disk
12 copper-based 13 tin abrasive disks of Silica abrasive disk
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
In the present invention, in the absence of explanation to the contrary, the noun of locality used such as " upper and lower, left and right " typically refers to
With reference to upper and lower, left and right shown in the drawings；" inside and outside " refers to the inside and outside of the profile relative to each component itself.Below with reference to
Attached drawing and in conjunction with embodiment come the present invention will be described in detail.
According to an aspect of the present invention, a kind of sapphire wafer abrasive disk, as shown in Figures 1 to 5, the grinding are provided
The upper surface of disk 1 is plane, and includes at least two abrasive areas, the table of at least two abrasive areas on the upper surface
Surface hardness is different.By the different abrasive areas of setting surface hardness, different abrasive areas are different to the bonding streng of abrasive grain, make
It obtains different abrasive areas and generates different grinding effects.
Sapphire wafer abrasive disk 1 of the invention, on the one hand by the way that the different milling zone of at least two surface hardnesses is arranged
Domain, so that sapphire wafer carries out rough lapping using the relatively high abrasive areas of surface hardness in grinding initial stage, then, then benefit
Smooth grinding is carried out with the relatively low abrasive areas of surface hardness, to reduce surface damage while improving material removing rate,
On the other hand, rough lapping and smooth grinding can be carried out to sapphire wafer by not needing replacement abrasive disk 1, improve processing efficiency,
Meanwhile avoiding that sapphire wafer is caused to damage during replacing abrasive disk 1, yield rate is provided.
Among the above, the upper surface of the abrasive disk 1 is working face, that is, the abrasive disk 1 connects with the sapphire wafer
Contacting surface.
In order to improve the grinding efficiency of abrasive disk 1, the shape of the abrasive areas includes annulus, between the abrasive areas
It is arranged concentrically.It is such to be arranged so that in process, the same abrasive areas continue sapphire wafer
Grinding, improve processing efficiency, meanwhile, when sapphire wafer is moved to another abrasive areas, abrasive disk 1 to sapphire wafer into
The further finishing of row.
Among the above, in order to balance the service life between each abrasive areas, two adjacent abrasive areas are close round
The surface hardness of the abrasive areas of the heart is greater than the surface hardness of the abrasive areas far from the center of circle.The big institute of surface hardness
It is weak to the bonding streng of abrasive grain to state abrasive areas, abrasive grain is not easy to be embedded in 1 surface of abrasive disk, and processing load is held by a small amount of bulky grain
Load, abrasive grain increase the cutting-in of workpiece, and material removing rate is high, and the working time is short；The small abrasive areas opposite grinding of surface hardness
The bonding streng of grain is strong, and abrasive grain is easy insertion 1 surface of abrasive disk, processes load by a large amount of abrasive grain shareds, abrasive grain is to workpiece
Cutting-in reduce, material removing rate is low, longevity of service, and therefore, the small abrasive areas longevity of service of surface hardness disappears
Speed block is consumed, so the small abrasive areas of surface hardness to be arranged in the periphery of the abrasive disk 1, it is small to increase surface hardness
The service life of the abrasive areas reduce the replacement week of abrasive disk 1 to balance the service life between each abrasive areas
Phase.
Among the above, in order to balance the low surface damage and high material removing rate of sapphire wafer attrition process, the grinding
Disk 1 includes 13 3 red copper abrasive disk 11, copper-based Silica abrasive disk 12 and tin abrasive disk abrasive areas.Using surface hardness
When big red copper abrasive disk 11 is ground, big abrasive grit size is not easy to be embedded in 1 surface of abrasive disk, and processing load is held by a small amount of bulky grain
Load, abrasive grain increase the cutting-in of workpiece, and workpiece surface brittleness fragmentation forms chip, and material removal efficiency is high, but to workpiece surface
Form biggish scratch, crackle and pit equivalent damage；When the small tin abrasive disk 13 of surface hardness is ground, big abrasive grit size is more
It is embedded in 1 surface of abrasive disk, more abrasive grain shared load, abrasive grain reduces the cutting-in of workpiece, the decline of material removal efficiency, but
The surface damage of formation is few；Copper-based Silica abrasive disk 12 is using red copper powder as matrix, and silica dioxide granule is as reinforcement, tree
Rouge bonding agent plays holding to red copper powder, silica dioxide granule, and silica dioxide granule Dispersed precipitate is formed firmly in Copper substrate
Particle adjusts the performance parameters such as elasticity modulus, the surface hardness of abrasive disk 1.To realize: when processing, copper-based silica is ground
The surface local plastic of mill 12 is better than red copper abrasive disk 11, and big abrasive grain can be made to be easy to fall into copper-based Silica abrasive disk 12
Surface avoids it from generating big scratch damage to workpiece surface；The integral rigidity of copper-based Silica abrasive disk 12 is ground better than tin
Disk 13 keeps higher workpiece material removal rate under certain loads, to realize the best grinding effect of abrasive grain.
Among the above, for the ease of realizing the grinding of different accuracy to sapphire wafer, the grinding in different accuracy is avoided
Sapphire wafer is caused to scratch in handoff procedure, the red copper abrasive disk 11, the copper-based Silica abrasive disk 12 and institute
Tin abrasive disk 13 is stated to set gradually.
Further, the red copper abrasive disk 11, the copper-based Silica abrasive disk 12 and the tin abrasive disk 13 with
It is arranged centered on the red copper abrasive disk 11.It is such setting so that sapphire wafer by rough lapping to smooth grinding handoff procedure
In will not scratch Sapphire wafer surface.
Among the above, in order to realize that the surface hardness realization to red copper abrasive disk 11 preferably optimizes, the copper-based titanium dioxide
The volume fraction of silica is not more than 10% in silicon abrasive disk 12.Silica does not influence the intrinsic physical chemistry of parent metal
Property.
Meanwhile the present invention also provides a kind of grinding device, the grinding device includes abrasive disk 1 of the present invention.
Among the above, the grinding device further includes sample tray 2 and translation component 3, when being ground to sapphire wafer, Lan Bao
Stone chip is mounted on the sample tray 2, and the sample tray 2 is mounted on the translation component 3 so that the translation component 3
The sample tray 2 is driven to move horizontally.Such setting is so that translation component 3 drives sapphire wafer to move horizontally, so that blue
Jewel chip can switch in different abrasive areas, meanwhile, different location of the sapphire wafer in same abrasive areas
When mobile, sufficiently abrasive areas can be utilized, reduce 1 replacement cycle of abrasive disk.
Among the above, the grinding device further includes grinding coil motor 4 and load sample coil motor 5, and the grinding coil motor 4 turns
Moving axis is connect with the center of circle of the abrasive disk 1, and the rotation axis of the load sample coil motor 5 is connect with the center of circle of the sample tray 2.This
The setting of sample is so that sapphire wafer and abrasive disk 1 rotate simultaneously, so that grinding of the abrasive disk 1 to Sapphire wafer surface each point
Relative equilibrium improves the processing flatness of sapphire wafer.
The translation component 3 includes translation motor, screw pair and translating rails, and the screw pair is mounted on institute
It states on translating rails, the rotation axis of the translation motor is connect with the lead screw, and the load sample coil motor 5 is fixed with the nut
Connection, the load sample coil motor 5 are slidably connected with the translating rails.Meanwhile the grinding device further includes lifting assembly, institute
It states translation component 3 to be mounted on the lifting assembly, so that the lifting assembly drives the translation component 3 to go up and down.It is described
Lifting assembly includes lifting motor, screw pair and riser guide, and the screw pair is mounted on the riser guide,
The rotation axis of the lifting motor is connect with the lead screw, and the translating rails are fixedly connected with the nut.The grinding is set
Standby further includes controller, and the controller is electrically connected with the translation motor and the lifting motor.
When using milling apparatus of the present invention, translation motor drives sample tray 2 to move along translating rails, until carrying
Sample dish 2 move to the top of red copper abrasive disk 11, and lifting motor drives translation component 3 to decline, until sample tray 2 drives sapphire
Chip is contacted with red copper abrasive disk 11, and applies certain pressure to red copper abrasive disk 11, and controller controls load sample coil motor 5 and grinds
Millstone motor 4 drives sample tray 2 and abrasive disk 1 to rotate respectively, at this point, red copper abrasive disk 11 is to sapphire wafer rough lapping, with
Afterwards, lifting motor drives translation component 3 to rise, and translation motor drives sample tray 2 to be moved on copper-based Silica abrasive disk 12
Side, lifting motor drives translation component 3 to decline, until sample tray 2 drives sapphire wafer and copper-based Silica abrasive disk 12
Contact, and certain pressure is applied to copper-based Silica abrasive disk 12, copper-based Silica abrasive disk 12 is to sapphire wafer essence
Grinding, then, lifting motor drive translation component 3 to rise, and translation motor drives sample tray 2 to be moved to 13 top of tin abrasive disk,
Lifting motor drives translation component 3 to decline, until sample tray 2 drives sapphire wafer to contact with tin abrasive disk 13, and grinds to tin
Mill 13 applies certain pressure, and tin abrasive disk 13 carries out further smooth grinding to sapphire wafer.
The foregoing is merely better embodiments of the invention, are not intended to limit the invention, all of the invention
Within spirit and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of sapphire wafer abrasive disk, which is characterized in that the upper surface of the abrasive disk (1) is plane, and the upper table
It include at least two abrasive areas on face, the surface hardness of at least two abrasive areas is different.
2. sapphire wafer abrasive disk according to claim 1, which is characterized in that the shape of the abrasive areas includes circle
Ring is arranged concentrically between the abrasive areas.
3. sapphire wafer abrasive disk according to claim 2, which is characterized in that two adjacent abrasive areas,
It is greater than the surface hardness of the abrasive areas far from the center of circle close to the surface hardness of the abrasive areas in the center of circle.
4. sapphire wafer abrasive disk according to claim 3, which is characterized in that the abrasive disk (1) includes that red copper is ground
(13) three mill (11), copper-based Silica abrasive disk (12) and tin abrasive disk abrasive areas.
5. sapphire wafer abrasive disk according to claim 4, which is characterized in that the red copper abrasive disk (11), described
Copper-based Silica abrasive disk (12) and the tin abrasive disk (13) are set gradually.
6. sapphire wafer abrasive disk according to claim 5, which is characterized in that the red copper abrasive disk (11), described
Copper-based Silica abrasive disk (12) and the tin abrasive disk (13) are arranged centered on the red copper abrasive disk (11).
7. sapphire wafer abrasive disk according to claim 4, which is characterized in that the copper-based Silica abrasive disk
(12) volume fraction of silica is not more than 10% in.
8. a kind of grinding device, which is characterized in that the grinding device includes claim 1 to grinding as claimed in claim 7
Disk (1).
9. grinding device according to claim 8, which is characterized in that the grinding device further includes sample tray (2) peace
It moves component (3), the sample tray (2) is mounted on the translation component (3) so that the translation component (3) drives the load
Sample dish (2) move horizontally.
10. grinding device according to claim 9, which is characterized in that the grinding device further includes grinding coil motor (4)
It is connect with the rotation axis of load sample coil motor (5), grinding coil motor (4) with the center of circle of the abrasive disk (1), the sample tray
The rotation axis of motor (5) is connect with the center of circle of the sample tray (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910621776.8A CN110238751A (en) | 2019-07-10 | 2019-07-10 | Sapphire wafer abrasive disk and grinding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910621776.8A CN110238751A (en) | 2019-07-10 | 2019-07-10 | Sapphire wafer abrasive disk and grinding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110238751A true CN110238751A (en) | 2019-09-17 |
Family
ID=67891814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910621776.8A Pending CN110238751A (en) | 2019-07-10 | 2019-07-10 | Sapphire wafer abrasive disk and grinding device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110238751A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116572150A (en) * | 2023-06-07 | 2023-08-11 | 上海致领研磨科技有限公司 | Grinder with rough grinding and fine grinding functions |
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|---|---|---|---|---|
| JPH10166259A (en) * | 1996-12-12 | 1998-06-23 | Okamoto Kosaku Kikai Seisakusho:Kk | Sapphire substrate grinding and polishing method and device |
| US20050079687A1 (en) * | 2003-09-23 | 2005-04-14 | Samsung Electro-Mechanics Co., Ltd. | Method for separating sapphire wafer into chips |
| CN104148993A (en) * | 2014-08-14 | 2014-11-19 | 厦门大学 | Minitype welding pin inner hole grinding device |
| CN204525209U (en) * | 2015-01-07 | 2015-08-05 | 广东奔朗新材料股份有限公司 | Dicyclic skive |
| CN104924195A (en) * | 2015-06-12 | 2015-09-23 | 浙江工业大学 | Sapphire wafer efficient ultra-precision machining method |
| CN107825282A (en) * | 2017-11-06 | 2018-03-23 | 浙江工业大学 | A kind of grinding and polishing device that can realize variable speed |
-
2019
- 2019-07-10 CN CN201910621776.8A patent/CN110238751A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10166259A (en) * | 1996-12-12 | 1998-06-23 | Okamoto Kosaku Kikai Seisakusho:Kk | Sapphire substrate grinding and polishing method and device |
| US20050079687A1 (en) * | 2003-09-23 | 2005-04-14 | Samsung Electro-Mechanics Co., Ltd. | Method for separating sapphire wafer into chips |
| CN104148993A (en) * | 2014-08-14 | 2014-11-19 | 厦门大学 | Minitype welding pin inner hole grinding device |
| CN204525209U (en) * | 2015-01-07 | 2015-08-05 | 广东奔朗新材料股份有限公司 | Dicyclic skive |
| CN104924195A (en) * | 2015-06-12 | 2015-09-23 | 浙江工业大学 | Sapphire wafer efficient ultra-precision machining method |
| CN107825282A (en) * | 2017-11-06 | 2018-03-23 | 浙江工业大学 | A kind of grinding and polishing device that can realize variable speed |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116572150A (en) * | 2023-06-07 | 2023-08-11 | 上海致领研磨科技有限公司 | Grinder with rough grinding and fine grinding functions |
| CN116572150B (en) * | 2023-06-07 | 2024-01-30 | 上海致领研磨科技有限公司 | Grinder with rough grinding and fine grinding functions |
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Application publication date: 20190917 |