CN101116953A - Chemical mechanism grinding and finishing device - Google Patents
Chemical mechanism grinding and finishing device Download PDFInfo
- Publication number
- CN101116953A CN101116953A CNA2006101082216A CN200610108221A CN101116953A CN 101116953 A CN101116953 A CN 101116953A CN A2006101082216 A CNA2006101082216 A CN A2006101082216A CN 200610108221 A CN200610108221 A CN 200610108221A CN 101116953 A CN101116953 A CN 101116953A
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- Prior art keywords
- wafer
- polishing
- polishing pad
- cmp
- down device
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- 238000000227 grinding Methods 0.000 title description 9
- 239000000126 substance Substances 0.000 title description 4
- 238000005498 polishing Methods 0.000 claims abstract description 110
- 238000005520 cutting process Methods 0.000 claims description 27
- 239000012530 fluid Substances 0.000 claims description 18
- 229910003460 diamond Inorganic materials 0.000 claims description 17
- 239000010432 diamond Substances 0.000 claims description 17
- 230000008439 repair process Effects 0.000 claims description 9
- 238000003701 mechanical milling Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 60
- 239000002421 finishing Substances 0.000 description 19
- 238000013461 design Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009966 trimming Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Abstract
The invention provides an abrading device for a chemico-mechanical milling which comprises a retaining ring for nesting wafer and carrying out the chemico-mechanical milling on a polishing pad, and a plurality of dressers which are arranged around the bottom of the retaining ring for polishing the wafer and modifying the polishing pad and keeping the polishing efficiency of the polishing pad.
Description
Technical field
The present invention relates to a kind of cutting down device (Dresser) that is applied to cmp, particularly a kind of cutting down device that invests cmp retainer ring (Retaining Ring).
Background technology
Along with the semiconductor fabrication process live width is more and more thin, flatness for thin film deposition in the wafer fabrication process requires also more and more high, and the use of copper production technology is also increasingly extensive, cmp (Chemical Mechanical Polish, CMP) equipment becomes manufacturing step crucial day by day in the semiconductor fabrication process in recent years, and the Equipment Market demand is also grown up fast.Grow up fast in this several years markets of CMP equipment, mainly be main several advantages because the CMP PROCESS FOR TREATMENT has been compared with conventional wafer planarization mode: 1,, reach exposure and the etch effect and the yield rate of better quality because CMP grinding rear surface is more smooth; 2, better cleaning effect, reduce since before PROCESS FOR TREATMENT not exclusively to surface-sensitive degree next than the influence of high technology.Because the processing of CMP can make the more accurate aligning desired depth of photoetching irradiation area, and can overcome and produce circuit broken string or short circuit phenomenon when metal is deposited on layer with the interlayer storehouse, also therefore make number of metal can from before 2 to 3 layers raise to 6 to 9 layers.
Along with the semiconductor fabrication process technology constantly advances towards the deep layer micron, the importance of wafer planarization is also constantly challenged each tame wafer factory.Because the CMP Equipment Market is grown up fast in recent years, required also relative development rapidly such as grinding agent in the consumptive material of CMP, parts and the manufacturing process.In the accurate glossing of chemical-mechanical planarization CMP (Chemical Mechanical Planarization), its wafer when polishing is to be pressed on the polishing pad (Pad) of a slice rotation.It is made and often contain pore that polishing pad is generally Polyurethane.Polishing pad just supplies " rag " of wiping wafer.Worn wafer surface highlight is defibrination (Slurry) polishing to be coated on pad interface.Defibrination contains the suspension abrasive particle close with live width.The liquid of defibrination also contains oxidant or corrosive agent usually.Liquid can and the loose oxide of wafer surface reaction generation, the chemical reaction of Here it is CMP.Abrasive particle supports the surface that just can clash into wafer with polishing pad, and this is mechanical worn with regard to CMP's.
See also Fig. 1, it discloses the schematic diagram of existing CMP mechanical lapping structure.As shown in the figure, this CMP machine comprises platform 11, and it is provided with the polishing pad 12 of rotation, and the surface of this polishing pad 12 have self-grind slurry dispenser 13 flow down lapping liquid 14.And when carrying out wafer 15 surface grindings, this wafer 15 is fixing by wafer chuck 16, and the periphery of this wafer 15 is promptly fixing with retainer ring (RetainingRing) 17; Utilize wafer chuck 16 to exert pressure and rotate, can carry out the surface mechanical attrition of wafer relative to this polishing pad 12.Generally speaking, applied pressure and relative velocity are big more, and the worn speed of CMP is just high more.In order to make polishing fluid can be distributed in polishing pad 12 surfaces uniformly, the surface of polishing pad 12 has the even distribution that multi-form groove (about 20 μ m are dark) is beneficial to reach polishing fluid usually.But when grinding, the surface that the defibrination that broken layer mixes also can be accumulated in polishing pad 12 becomes not only firmly but also sliding (Glazing) it.Just reduced the pressure that contacts of abrasive particle after the contact area of polishing pad and wafer 15 heightens, the polishing speed of wafer will subtract greatly like this.What is more, and the surface that dirty polishing pad 12 can pollute wafer 15 increases its defective.In order to keep polishing speed and to keep wafer clean, polishing pad 12 must be with " diamond disk " (Diamond Disk) 18 finishings (Dressing or Conditioning), and CMP could continue to carry out like this.
Yet when reality is used, the zone that CMP polishing pad 12 grinding wafers are used, the finishing zone of carrying out polishing pad 12 with diamond disk 18 is not consistent.Therefore, how to research and develop a kind of trimmer of applied chemistry mechanical lapping, with the purpose that the structure of simplifying most and handling process can reach effective trimming polishing pad, this is the target of the required develop actively research of this association area at present.The inventor etc. through studying intensively, and are engaged in the many years of experience in the research field with it, propose the trimming device that the present invention invests cmp retainer ring (Retaining Ring) then, solve existing problem, promote manufacturing capacity simultaneously.
Summary of the invention
Main purpose of the present invention provides a kind of trimming device that invests cmp retainer ring (Retaining Ring), can reach the purpose of effective trimming polishing pad with the structure of simplifying most.Because the present invention is fixed on specific trimmer on the grinding retainer ring (Retaining Ring) of CMP, thus can be when carrying out wafer polishing, and trimming polished pad is to keep its good polishing efficiency simultaneously.And can effectively avoid CMP retainer ring (Retaining Ring) the life-span near the time make polishing fluid be difficult for flowing into the center wafer place, and cause the different shortcoming of polishing velocity inside and outside the wafer.
For reaching above-mentioned purpose, of the present invention than the broad sense embodiment for a kind of cutting down device that invests cmp retainer ring (Retaining Ring) is provided, its overall structure comprises stationary fixture at least, in order to the build-in wafer, on polishing pad, to carry out cmp, wherein this stationary fixture also has the contact anchor ring, in order to quantitatively to keep the polishing fluid of this wafer bottom surface, avoids very few polishing fluid to flow into wafer bottom center place and causes polishing velocity difference inside and outside the wafer; With the finishing unit, be arranged on the bottom surface of this stationary fixture, form finishing face, when carrying out this wafer polishing, repair this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.
According to above-mentioned design, wherein this stationary fixture also comprises retainer ring (Retaining Ring), to form this contact anchor ring.
According to above-mentioned design, wherein this finishing unit comprises a plurality of trimmers, on average is arranged on the bottom surface periphery of this retainer ring.
According to above-mentioned design, wherein this trimmer is diamond disk (Diamond Disk).
The another way according to the present invention, the present invention also provides a kind of cutting down device that is applied to cmp, comprising: retainer ring (Retaining Ring), in order to the build-in wafer, on polishing pad, to carry out cmp; With a plurality of trimmers, be arranged on this retainer ring bottom surface periphery, when carrying out this wafer polishing, repair this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.
According to above-mentioned design, wherein this trimmer is diamond disk (Diamond Disk).
According to above-mentioned design, wherein this retainer ring is arranged on the wafer chuck.
For reaching above-mentioned purpose, of the present invention than the broad sense embodiment for a kind of cutting down device that is applied to cmp is provided, comprise: ring bodies, in order to the build-in wafer, to carry out cmp on polishing pad, wherein this ring bodies also has the contact anchor ring, is arranged on the bottom surface of this ring bodies, in order to quantitatively to keep the polishing fluid of this wafer bottom surface, avoid very few polishing fluid to flow into wafer bottom center place and cause polishing velocity difference inside and outside the wafer; With finishing face, be arranged on the bottom surface of this ring bodies, in order to when carrying out this wafer polishing, repair this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.
According to above-mentioned design, wherein should finishing face be arranged on this contact anchor ring around.
According to above-mentioned design, wherein this ring bodies is made of retainer ring (Retaining Ring).
According to above-mentioned design, wherein should be formed by the bottom surface periphery that a plurality of trimmers on average are arranged on this retainer ring by finishing face.
According to above-mentioned design, wherein this trimmer is a diamond disk (Diamond Disk).
Description of drawings
Fig. 1 discloses the schematic diagram of existing CMP mechanical lapping structure.
Fig. 2 discloses a kind of cutting down device that invests cmp retainer ring (RetainingRing) of the preferred embodiment of the present invention.
Fig. 3 discloses the schematic diagram of cutting down device when using of Fig. 2.
Fig. 4 discloses a kind of cutting down device that invests cmp retainer ring (Retaining Ring) of another preferred embodiment of the present invention.
The simple symbol explanation
11: platform 12: polishing pad
13: slurry dispenser 14: lapping liquid
15: wafer 16: wafer chuck
17: retainer ring 18: diamond disk
20: stationary fixture 21: retainer ring
22: trimmer 23: wafer
24: polishing pad 25: polishing fluid
26: rotation platform 27: the slurry dispenser
41: ring bodies 411: the contact anchor ring
42: finishing unit 421: finishing face
The specific embodiment
Some exemplary embodiments that embody feature of the present invention and advantage will be described in detail in the explanation of back segment.Be understood that the present invention can have various variations on different modes, its neither departing from the scope of the present invention, and explanation wherein and the icon usefulness that ought explain in itself, but not in order to restriction the present invention.
See also Fig. 2, it is a kind of cutting down device that invests cmp retainer ring (Retaining Ring) that discloses the preferred embodiment of the present invention.As shown in the figure, comprise retainer ring (RetainingRing) 21, in order to the build-in wafer, on polishing pad, to carry out cmp; With a plurality of trimmers 22, be arranged on this retainer ring 21 bottom surface peripheries, when carrying out this wafer polishing, repair this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.When practical application, these a plurality of trimmer 22 parts can be made of a plurality of diamond disks (Diamond Disk).Certainly, this retainer ring 21 is arranged on the wafer chuck.
For further clearly demonstrating invention structure of the present invention, please consult Fig. 3 again.It is the schematic diagram of cutting down device when using that discloses Fig. 2.As shown in the figure, aforesaid retainer ring 21 is the part of stationary fixture 20, in order to build-in wafer 23, and on polishing pad 24, this wafer 23 is carried out cmp, these retainer ring 21 formed contact anchor rings wherein, in order to quantitatively keeping the polishing fluid 25 of these wafer 23 bottom surfaces, and avoid very few polishing fluid 25 to flow into wafer bottom center place and cause wafer 23 inside and outside polishing velocity differences.On the other hand, one of topmost characteristic of the present invention promptly is a plurality of trimmers 22 are arranged on the bottom surface periphery of this retainer ring 21, the finishing unit that has finishing face with formation, in order to carry out in 23 polishings of this wafer, repair this polishing pad 24 with the finishing unit simultaneously, to keep the good polishing efficiency of this polishing pad.
And cutting down device of the present invention is actual when carrying out cmp, and this polishing pad 24 can be fixed on the rotation platform 26 in advance, and in rotation, the polishing fluid 25 that self-grind slurry dispenser 27 flows down can on average be dispersed on this polishing pad 24.On the other hand, by this wafer 23 of 21 build-ins of this retainer ring, because of the polishing fluid 25 and the polishing pad 24 of the rotation of this stationary fixture 20 and pressurization and its below carries out the grinding of chemical machinery.Certainly the most important trimmer 22 that is arranged on these retainer ring 21 bottom surface peripheries can be repaired this polishing pad 24 downwards because of the rotation and the pressurization of this stationary fixture 20, simultaneously to keep its good polishing efficiency.So cutting down structure of the present invention can be when carrying out wafer polishing, trimming polished pad is to keep whole good polishing efficiency simultaneously.
See also Fig. 4, it is a kind of cutting down device that invests cmp retainer ring (Retaining Ring) that discloses another preferred embodiment of the present invention.Comprise ring bodies 41, in order to build-in wafer (please consulting Fig. 3 simultaneously), on polishing pad, to carry out cmp, wherein this ring bodies 41 also has contact anchor ring 411, be arranged on the bottom surface of this ring bodies, in order to quantitatively to keep the polishing fluid of this wafer bottom surface, avoid very few polishing fluid to flow into wafer bottom center place and cause polishing velocity difference inside and outside the wafer; With finishing face 421, be arranged on the bottom surface of this ring bodies, in order to when carrying out this wafer polishing, repair this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.Wherein should can be constituted by a plurality of diamond disks (Diamond Disk) by finishing face 421, and in these contact anchor ring 411 peripheral finishing unit 42 that form special pattern.When practical application, the pattern of this finishing unit 42 is not limited, and in the present embodiment, finishing unit 42 formed finishing faces 421 are circumferentia, anchor ring 411 is similar with contacting, so in use, can average dispersion by stationary fixture institute applied pressure, and effectively avoid CMP retainer ring (Retaining Ring) the life-span near the time make polishing fluid be difficult for flowing into the center wafer place and cause the different shortcoming of polishing velocity inside and outside the wafer
In sum, the invention provides a kind of cutting down device that invests cmp retainer ring (Retaining Ring), can reach the purpose of effective trimming polishing pad with the structure of simplifying most.Wherein the present invention also is fixed on specific trimmer on the grinding retainer ring (Retaining Ring) of CMP, thus can be when carrying out wafer polishing, and trimming polished pad is to keep its good polishing efficiency simultaneously.And can effectively avoid CMP retainer ring (Retaining Ring) the life-span near the time make polishing fluid be difficult for flow into the center wafer place and cause the different shortcoming of polishing velocity inside and outside the wafer, this is beyond one's reach for prior art.
Although the present invention is described in detail by the above embodiments, yet can carry out various changes and modification, and not break away from restricted portion as attached claim institute by those skilled in the art.
Claims (12)
1. cutting down device that is applied to cmp comprises:
Stationary fixture, in order to the build-in wafer, to carry out cmp on polishing pad, wherein this stationary fixture also has the contact anchor ring, in order to quantitatively to keep the polishing fluid of this wafer bottom surface; With
The finishing unit is arranged on the bottom surface of this stationary fixture, forms finishing face, when carrying out this wafer polishing, repairs this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.
2. cutting down device as claimed in claim 1, wherein this stationary fixture also comprises retainer ring, to form this contact anchor ring.
3. cutting down device as claimed in claim 2, wherein this finishing unit comprises a plurality of trimmers, on average be arranged on this retainer ring bottom surface around.
4. cutting down device as claimed in claim 3, wherein this trimmer comprises diamond disk.
5. cutting down device that is applied to cmp comprises:
Retainer ring is in order to the build-in wafer, to carry out cmp on polishing pad; With
A plurality of trimmers are arranged on this retainer ring bottom surface periphery, when carrying out this wafer polishing, repair this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.
6. cutting down device as claimed in claim 5, wherein this trimmer comprises diamond disk.
7. cutting down device as claimed in claim 5, wherein this retainer ring is arranged on the wafer chuck.
8. cutting down device that is applied to cmp comprises:
Ring bodies, in order to the build-in wafer, to carry out cmp on polishing pad, wherein this ring bodies also has the contact anchor ring, is arranged on the bottom surface of this ring bodies, in order to quantitatively to keep the polishing fluid of this wafer bottom surface; With
Finishing face is arranged on the bottom surface of this ring bodies, in order to when carrying out this wafer polishing, repairs this polishing pad simultaneously, to keep the good polishing efficiency of this polishing pad.
9. cutting down device as claimed in claim 8, wherein should finishing face be arranged on this contact anchor ring around.
10. cutting down device as claimed in claim 8, wherein this ring bodies is made of retainer ring.
11. cutting down device as claimed in claim 10 wherein should be formed by the bottom surface periphery that a plurality of trimmers on average are arranged on this retainer ring by finishing face.
12. cutting down device as claimed in claim 11, wherein this trimmer comprises diamond disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101082216A CN101116953A (en) | 2006-08-01 | 2006-08-01 | Chemical mechanism grinding and finishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101082216A CN101116953A (en) | 2006-08-01 | 2006-08-01 | Chemical mechanism grinding and finishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101116953A true CN101116953A (en) | 2008-02-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101082216A Pending CN101116953A (en) | 2006-08-01 | 2006-08-01 | Chemical mechanism grinding and finishing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101116953A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102229105A (en) * | 2011-06-28 | 2011-11-02 | 清华大学 | Chemically mechanical polishing method |
| CN102294647A (en) * | 2011-09-07 | 2011-12-28 | 清华大学 | Chemical mechanical polishing method |
| CN102554771A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Chip positioning device of grinding head |
| CN103144040A (en) * | 2013-03-15 | 2013-06-12 | 上海华力微电子有限公司 | Chemical mechanical polishing equipment |
| CN108145593A (en) * | 2017-12-28 | 2018-06-12 | 德淮半导体有限公司 | Wafer processing apparatus and its method of work |
| CN114952452A (en) * | 2022-04-19 | 2022-08-30 | 赛莱克斯微系统科技（北京）有限公司 | Polishing pad dresser, chemical mechanical polishing apparatus and method |
-
2006
- 2006-08-01 CN CNA2006101082216A patent/CN101116953A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102554771A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Chip positioning device of grinding head |
| CN102229105A (en) * | 2011-06-28 | 2011-11-02 | 清华大学 | Chemically mechanical polishing method |
| CN102294647A (en) * | 2011-09-07 | 2011-12-28 | 清华大学 | Chemical mechanical polishing method |
| CN103144040A (en) * | 2013-03-15 | 2013-06-12 | 上海华力微电子有限公司 | Chemical mechanical polishing equipment |
| CN108145593A (en) * | 2017-12-28 | 2018-06-12 | 德淮半导体有限公司 | Wafer processing apparatus and its method of work |
| CN114952452A (en) * | 2022-04-19 | 2022-08-30 | 赛莱克斯微系统科技（北京）有限公司 | Polishing pad dresser, chemical mechanical polishing apparatus and method |
| CN114952452B (en) * | 2022-04-19 | 2023-09-26 | 赛莱克斯微系统科技（北京）有限公司 | Polishing pad conditioner, chemical mechanical polishing device and method |
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Open date: 20080206 |