CN105666300A - Double-surface polishing method for silicon carbide chip - Google Patents

Double-surface polishing method for silicon carbide chip Download PDF

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Publication number
CN105666300A
CN105666300A CN201610071886.8A CN201610071886A CN105666300A CN 105666300 A CN105666300 A CN 105666300A CN 201610071886 A CN201610071886 A CN 201610071886A CN 105666300 A CN105666300 A CN 105666300A
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CN
China
Prior art keywords
polishing
silicon carbide
silicon dioxide
resin
diamond
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Pending
Application number
CN201610071886.8A
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Chinese (zh)
Inventor
詹琳
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CENTURY GOLDRAY SEMICONDUCTOR CO., LTD.
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BEIJING HUAJIN CHUANGWEI ELECTRONICS Co Ltd
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Priority to CN201610071886.8A priority Critical patent/CN105666300A/en
Publication of CN105666300A publication Critical patent/CN105666300A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The invention relates to a double-surface polishing method for a silicon carbide chip. The double-surface polishing method comprises the steps that the silicon carbide chip is subjected to rough polishing, semi-finishing polishing and finishing polishing sequentially on a double-surface polishing machine; during rough polishing, water-soluble diamond polishing liquid is used, the diameter of diamond particles is 5-15 microns, the polishing pressure is 40-100 kg, and a polishing disc is a resin copper disc or a resin tin disc or a polishing pad of a polyurethane structure; during semi-finishing polishing, water-soluble diamond polishing liquid is used, the diameter of diamond particles is 0.25-3 microns, the polishing pressure is 60-120 kg, and a polishing disc is a resin copper disc or a resin tin disc or a polishing pad of a polyurethane structure; and during finishing polishing, alkali silicon dioxide polishing liquid is used, an oxidizing agent with a proper proportion is added, the PH value of the finishing polishing liquid is adjusted to be 9-13, the polishing pressure is 80-140 kg, and a polishing pad is of a fluff structure. By means of the double-surface polishing method, the processing time can be shortened by a half, the flatness of the silicon carbide chip is improved, the surface quality is consistent after polishing, and the silicon carbide chip has no defects of orange peel, scratching damage, matte and the like.

Description

A kind of twin polishing method of silicon carbide wafer
Technical field
The present invention relates to carborundum (SiC) wafer surface machining field, the twin polishing method of especially a kind of silicon carbide wafer.
Background technology
Carborundum (SiC) is important third generation semi-conducting material, compared with the conventional semiconductor material such as silicon (Si) and GaAs (GaAs), it has the excellent properties such as high heat conductance, high breakdown field strength, high saturated electrons drift speed and high bonding energy, has huge application prospect in high temperature, high frequency, high power and radioprotective device.
Along with single-crystal silicon carbide sheet polished silicon wafer is successfully used to every field, people start more to pay close attention to the process technology of single-crystal silicon carbide sheet. Carborundum crystals hardness is bigger, Mohs' hardness is about 9.3, slightly below diamond, cause that its difficulty of processing is bigger, current domestic main flow process technology is single-sided process, generally first one face (such as carbon face) of processing, then processing another one face (such as silicon face), the wafer so obtained not only flatness is poor, and the process-cycle is long, production cost is high, easily causes, when processing another side, the damage (scuffing) that the secondary operations to machined surface introduces, and greatly constrains the development of silicon carbide wafer processing.
Summary of the invention
For prior art Problems existing, it is an object of the invention to provide a kind of twin polishing method of silicon carbide wafer, be used for improving silicon carbide wafer polishing efficiency, reduce production cost, improve the flatness after wafer polishing.
One silicon carbide wafer twin polishing method of the present invention for achieving the above object, is sequentially carried out rough polishing, half essence throwing and finishing polish including by silicon carbide wafer at Twp-sided polishing machine; Wherein,
When carrying out described rough polishing, using water solublity diamond polishing liquid, diamond particles particle diameter is 5-15um, and polish pressure is 40-100kg, and polishing disk is the polishing pad of resin copper dish, resin stannum dish or polyurethanes structure;
When carrying out described half essence throwing, using water solublity diamond polishing liquid, diamond particles particle diameter is 0.25-3um, and polish pressure is 60-120kg, and polishing disk is the polishing pad of resin copper dish, resin stannum dish or polyurethanes structure;
When carrying out described finishing polish, using the silicon dioxide polishing solution of alkalescence, add the oxidant of proper proportion, regulating fine polishing liquid pH value is 9-13, and polish pressure is 80-140kg, and polishing pad is the polishing pad of fine hair class formation.
Further, described silicon dioxide polishing solution includes silicon dioxide colloid suspending agent and ionized water, described silicon dioxide colloid suspending agent with described ionized water by 1:5-1:15(volume) mix.
Further, described oxidant accounts for the 10-20% of described silicon dioxide polishing solution weight.
By the twin polishing method of the present invention, one times of process time can be saved, silicon carbide wafer flatness can reach TTV(total thickness variations) < 10, Bow(flexibility) < 15, Warp(angularity) < 15um, surface of polished uniform quality, without Pericarpium Citri tangerinae, scuffing, the defect such as vaporific.
Detailed description of the invention
Below in conjunction with detailed description of the invention, the present invention is described in further detail.
Embodiment 1
First, single-crystal silicon carbide sheet carrying out rough polishing on Twp-sided polishing machine, polishing fluid uses water solublity diamond polishing liquid, and diamond particles particle diameter is 5um, and polish pressure is 40kg, and polishing disk is resin copper dish;
Secondly, single-crystal silicon carbide sheet carrying out half essence on Twp-sided polishing machine and throws, use water solublity diamond polishing liquid, diamond particles particle diameter is 0.25um, and polish pressure is 60kg, and polishing disk is resin stannum dish;
Finally, single-crystal silicon carbide sheet is carried out on Twp-sided polishing machine finishing polish, using the silicon dioxide polishing solution of alkalescence, wherein, silicon dioxide colloid suspending agent and deionized water press the volume ratio mixed configuration silicon dioxide polishing solution of 1:5, add the oxidant of proper proportion, the present embodiment uses hydrogen peroxide as oxidant, and it is 10% that additional proportion accounts for polishing fluid weight ratio, and regulating fine polishing liquid pH value is 9, polish pressure is 80kg, and polishing pad is the polishing pad of fine hair class formation.
By the twin polishing method of the present invention, one times of process time can be saved, silicon carbide wafer flatness can reach TTV(total thickness variations) < 10, Bow(flexibility) < 15, Warp(angularity) < 15um, surface of polished uniform quality, without Pericarpium Citri tangerinae, scuffing, the defect such as vaporific.
Embodiment 2
First, single-crystal silicon carbide sheet carrying out rough polishing on Twp-sided polishing machine, polishing fluid uses water solublity diamond polishing liquid, and diamond particles particle diameter is 15um, and polish pressure is 100kg, and polishing disk is resin copper dish;
Secondly, single-crystal silicon carbide sheet carrying out half essence on Twp-sided polishing machine and throws, use water solublity diamond polishing liquid, diamond particles particle diameter is 3um, and polish pressure is 120kg, and polishing disk is resin stannum dish;
Finally, single-crystal silicon carbide sheet is carried out on Twp-sided polishing machine finishing polish, using the silicon dioxide polishing solution of alkalescence, wherein, silicon dioxide colloid suspending agent and deionized water press the volume ratio mixed configuration silicon dioxide polishing solution of 1:15, add the oxidant of proper proportion, the present embodiment uses hydrogen peroxide as oxidant, and it is 20% that additional proportion accounts for polishing fluid weight ratio, and regulating fine polishing liquid pH value is 13, polish pressure is 140kg, and polishing pad is the polishing pad of fine hair class formation.
Embodiment 3
First, single-crystal silicon carbide sheet carrying out rough polishing on Twp-sided polishing machine, polishing fluid uses water solublity diamond polishing liquid, and diamond particles particle diameter is 10um, and polish pressure is 70kg, and polishing disk is resin copper dish;
Secondly, single-crystal silicon carbide sheet carrying out half essence on Twp-sided polishing machine and throws, use water solublity diamond polishing liquid, diamond particles particle diameter is 1.5um, and polish pressure is 80kg, and polishing disk is resin stannum dish;
Finally, single-crystal silicon carbide sheet is carried out on Twp-sided polishing machine finishing polish, using the silicon dioxide polishing solution of alkalescence, wherein, silicon dioxide colloid suspending agent and deionized water press the volume ratio mixed configuration silicon dioxide polishing solution of 1:10, add the oxidant of proper proportion, the present embodiment uses hydrogen peroxide as oxidant, and it is 15% that additional proportion accounts for polishing fluid weight ratio, and regulating fine polishing liquid pH value is 11, polish pressure is 110kg, and polishing pad is the polishing pad of fine hair class formation.
Above-mentioned example is only intended to the present invention is described, embodiments of the present invention are not limited to these examples, and the various detailed description of the invention of inventive concept that what those skilled in the art were made meet are all within protection scope of the present invention.

Claims (3)

1. a silicon carbide wafer twin polishing method, it is characterised in that include that at Twp-sided polishing machine, silicon carbide wafer is sequentially carried out rough polishing, half essence is thrown and finishing polish; Wherein,
When carrying out described rough polishing, using water solublity diamond polishing liquid, diamond particles particle diameter is 5-15um, and polish pressure is 40-100kg, and polishing disk is the polishing pad of resin copper dish, resin stannum dish or polyurethanes structure;
When carrying out described half essence throwing, using water solublity diamond polishing liquid, diamond particles particle diameter is 0.25-3um, and polish pressure is 60-120kg, and polishing disk is the polishing pad of resin copper dish, resin stannum dish or polyurethanes structure;
When carrying out described finishing polish, using the silicon dioxide polishing solution of alkalescence, add the oxidant of proper proportion, regulating fine polishing liquid pH value is 9-13, and polish pressure is 80-140kg, and polishing pad is the polishing pad of fine hair class formation.
2. silicon carbide wafer twin polishing method as claimed in claim 1, it is characterised in that described silicon dioxide polishing solution includes silicon dioxide colloid suspending agent and ionized water, and described silicon dioxide colloid suspending agent and described ionized water press 1:5-1:15 volume mixture.
3. silicon carbide wafer twin polishing method as claimed in claim 1, it is characterised in that described oxidant accounts for the 10-20% of described silicon dioxide polishing solution weight.
CN201610071886.8A 2016-02-02 2016-02-02 Double-surface polishing method for silicon carbide chip Pending CN105666300A (en)

Priority Applications (1)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106181734A (en) * 2016-08-01 2016-12-07 中国电子科技集团公司第四十六研究所 A kind of synthetic resin stannum dish twin polishing method for gallium nitride single crystal sheet
CN109129028A (en) * 2017-06-15 2019-01-04 北京天科合达半导体股份有限公司 A kind of processing method of efficient silicon carbide wafer
CN109262373A (en) * 2017-07-18 2019-01-25 东莞华晶粉末冶金有限公司 The grinding method of zirconia ceramics
CN109396967A (en) * 2018-12-12 2019-03-01 中国电子科技集团公司第四十六研究所 A kind of cmp method for cadmium selenide crystal
CN111421391A (en) * 2020-03-09 2020-07-17 大连理工大学 Double-sided chemical mechanical polishing method for single crystal diamond wafer
CN111558853A (en) * 2020-05-15 2020-08-21 南通大学 Method for quickly polishing large-size superhard substrate slice
CN111748287A (en) * 2020-06-30 2020-10-09 中国科学院上海微系统与信息技术研究所 SiC wafer polishing solution and preparation method and application thereof
CN113601376A (en) * 2021-08-10 2021-11-05 山西烁科晶体有限公司 Method for measuring single-side polishing rate in silicon carbide double-side polishing
CN113664694A (en) * 2021-07-29 2021-11-19 山西烁科晶体有限公司 Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-surface polishing
CN114762995A (en) * 2021-01-14 2022-07-19 赛尼克公司 Method for manufacturing silicon carbide wafer, and system for manufacturing wafer
CN116435175A (en) * 2023-05-19 2023-07-14 河北同光半导体股份有限公司 Processing method applied to silicon carbide single crystal substrate
CN114762995B (en) * 2021-01-14 2024-04-26 赛尼克公司 Method for manufacturing silicon carbide wafer, and system for manufacturing wafer

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CN1836842A (en) * 2006-04-19 2006-09-27 山东大学 Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet
CN102107391A (en) * 2009-12-24 2011-06-29 北京天科合达蓝光半导体有限公司 Method for processing monocrystal silicon carbide wafer
CN102990503A (en) * 2012-11-09 2013-03-27 中国电子科技集团公司第四十六研究所 Polishing method applied to CdS wafer
CN103100965A (en) * 2013-02-05 2013-05-15 中国电子科技集团公司第四十六研究所 InP single crystal wafer twin polishing method and device
CN103506928A (en) * 2012-06-19 2014-01-15 上海硅酸盐研究所中试基地 Super-hard semiconductor material polishing method
CN103624665A (en) * 2013-11-26 2014-03-12 浙江上城科技有限公司 Two-sided polishing method of sapphire touch panel
CN104827592A (en) * 2015-04-22 2015-08-12 苏州爱彼光电材料有限公司 Processing method of large-sized sapphire substrate slice
CN104999365A (en) * 2015-06-16 2015-10-28 东莞市中微纳米科技有限公司 Sapphire wafer grinding and polishing method

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Publication number Priority date Publication date Assignee Title
CN1836842A (en) * 2006-04-19 2006-09-27 山东大学 Surface polishing method for major diameter high hardness 6H-SiC monocrystalline sheet
CN102107391A (en) * 2009-12-24 2011-06-29 北京天科合达蓝光半导体有限公司 Method for processing monocrystal silicon carbide wafer
CN103506928A (en) * 2012-06-19 2014-01-15 上海硅酸盐研究所中试基地 Super-hard semiconductor material polishing method
CN102990503A (en) * 2012-11-09 2013-03-27 中国电子科技集团公司第四十六研究所 Polishing method applied to CdS wafer
CN103100965A (en) * 2013-02-05 2013-05-15 中国电子科技集团公司第四十六研究所 InP single crystal wafer twin polishing method and device
CN103624665A (en) * 2013-11-26 2014-03-12 浙江上城科技有限公司 Two-sided polishing method of sapphire touch panel
CN104827592A (en) * 2015-04-22 2015-08-12 苏州爱彼光电材料有限公司 Processing method of large-sized sapphire substrate slice
CN104999365A (en) * 2015-06-16 2015-10-28 东莞市中微纳米科技有限公司 Sapphire wafer grinding and polishing method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106181734A (en) * 2016-08-01 2016-12-07 中国电子科技集团公司第四十六研究所 A kind of synthetic resin stannum dish twin polishing method for gallium nitride single crystal sheet
CN109129028A (en) * 2017-06-15 2019-01-04 北京天科合达半导体股份有限公司 A kind of processing method of efficient silicon carbide wafer
CN109262373A (en) * 2017-07-18 2019-01-25 东莞华晶粉末冶金有限公司 The grinding method of zirconia ceramics
CN109262373B (en) * 2017-07-18 2020-06-02 东莞华晶粉末冶金有限公司 Method for grinding zirconia ceramics
CN109396967B (en) * 2018-12-12 2020-10-02 中国电子科技集团公司第四十六研究所 Chemical mechanical polishing method for cadmium selenide crystal
CN109396967A (en) * 2018-12-12 2019-03-01 中国电子科技集团公司第四十六研究所 A kind of cmp method for cadmium selenide crystal
CN111421391A (en) * 2020-03-09 2020-07-17 大连理工大学 Double-sided chemical mechanical polishing method for single crystal diamond wafer
CN111558853A (en) * 2020-05-15 2020-08-21 南通大学 Method for quickly polishing large-size superhard substrate slice
CN111748287A (en) * 2020-06-30 2020-10-09 中国科学院上海微系统与信息技术研究所 SiC wafer polishing solution and preparation method and application thereof
CN114762995A (en) * 2021-01-14 2022-07-19 赛尼克公司 Method for manufacturing silicon carbide wafer, and system for manufacturing wafer
CN114762995B (en) * 2021-01-14 2024-04-26 赛尼克公司 Method for manufacturing silicon carbide wafer, and system for manufacturing wafer
CN113664694A (en) * 2021-07-29 2021-11-19 山西烁科晶体有限公司 Method for measuring removal thickness of silicon surface and carbon surface in silicon carbide double-surface polishing
CN113601376A (en) * 2021-08-10 2021-11-05 山西烁科晶体有限公司 Method for measuring single-side polishing rate in silicon carbide double-side polishing
CN116435175A (en) * 2023-05-19 2023-07-14 河北同光半导体股份有限公司 Processing method applied to silicon carbide single crystal substrate

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Effective date of registration: 20170109

Address after: Tonghui trunk road 100176 Beijing city Daxing District economic and Technological Development Zone No. 17 hospital

Applicant after: CENTURY GOLDRAY SEMICONDUCTOR CO., LTD.

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Applicant before: Beijing Huajin Chuangwei Electronics Co., Ltd.

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Application publication date: 20160615