CN102107391A - Method for processing monocrystal silicon carbide wafer - Google Patents
Method for processing monocrystal silicon carbide wafer Download PDFInfo
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- CN102107391A CN102107391A CN2009102435191A CN200910243519A CN102107391A CN 102107391 A CN102107391 A CN 102107391A CN 2009102435191 A CN2009102435191 A CN 2009102435191A CN 200910243519 A CN200910243519 A CN 200910243519A CN 102107391 A CN102107391 A CN 102107391A
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Abstract
The invention provides a method for obtaining the high-quality surface of monocrystal silicon carbide through mechanical grinding and chemical polishing. By adopting the method, point defects, linear defects and planar defects of the monocrystal silicon carbide surface can be removed through double-side grinding, single-side swinging arm type rough grinding, single-side swinging arm type fine grinding and single-side swinging arm type CMP (chemically mechanical polishing), and surface blemishes and damaged layers of a wafer can be eliminated to the utmost extent, so that the high-quality surface of a monocrystal silicon carbide wafer can be obtained.
Description
Technical field
The present invention relates to a kind of processing method of silicon carbide single-crystal surface, particularly relate to a kind of machining and chemical treatment method of single-crystal silicon carbide wafer surface.
Background technology
Monocrystalline silicon carbide has characteristics such as high heat conductance, high saturated electrons drift speed as wide bandgap semiconductor.Along with high speed, the growing needs of high frequency radio technology, wide band gap semiconducter more and more is subjected to people's attention, this semiconductor devices can satisfy the unappeasable plurality of advantages of ordinary silicon base semiconductor, for example can and work under the rugged environment more at more high power levels, higher temperature.In fact metal semiconductor field effect transis of making on this basis and metal oxide semiconductor field effect tube etc. are all realized.Therefore obtaining high-quality silicon carbide substrates material seems more and more important.Here said high-quality not only is meant the quality of crystal own, particularly importantly the silicon carbide single-crystal surface quality.This is not only the needs of device preparation, also is the needs of epitaxial growth film or body monocrystalline.In fact, epitaxial growth is very strong to the dependence of substrate, and defective very little on the substrate also can be destroyed the periodicity of silicon carbide single-crystal surface, and spreads, expands on the film, has a strong impact on film quality.Even during as seed crystal, the body monocrystal material that grows out also can be subjected to having a strong impact on of substrate defects, and all defect on the substrate surface generally can be by slavish copying in new epitaxial material.This class defective not only can cause leaky, also can significantly reduce electron mobility.
In order to obtain high-quality film and body monocrystalline, just be necessary to remove earlier the damage layer of SiC single-crystal surface.Existing chemical corrosion method mainly comprises: wet corrosion method, oxidizing process, anodic attack method and surface plasma etch etc.Wherein the wet corrosion method also claims molten-salt growth method, is the salt that utilizes fusion, carries out corroding method such as potassium hydroxide (KOH) etc., and this class methods reaction speed is very fast, and is simple, but is difficult to control the corrosion rate and the degree of depth.
Anodic attack is a kind of electrochemical etching method, and as anode, corrosion efficient is very low, is difficult to satisfy industrial needs with sample, and product quality is difficult to control, and the silicon carbide after general the processing is of low quality.In addition, oxidizing process can cause the reallocation of defective accumulation and impurity increase and doped chemical etc., is a very complicated process.
What deserves to be mentioned is the surface plasma etch, this method is utilized the plasma bombardment silicon carbide, removes the damage layer that forms in the process of lapping, and this method clearance is very high, but tends to introduce new defective and damage when removing the damage layer.
Above method and research all do not have system and study the crystal method for processing all sidedly, and basically, are not effectively to solve the method that high-quality carborundum is produced.Reason is that these methods have all only been noticed solution crystal processing later stage surface-treated in a certain respect, maybe can't take into account others and ignore, and for example when removing the damage layer, can't avoid introducing new damage; In the control crystal thickness, can't take into account the surface quality of crystal etc.
Summary of the invention
The present invention be intended to propose a kind of complete, systematically handle the method for single-crystal silicon carbide wafer surface.According to this method, can effectively obtain high quality silicon carbide wafers, and technology is simply efficient, wafer surface cut total length is not more than wafer radius, and wafer surface roughness (RMS) is less than 0.5 nanometer.
Processing method of the present invention can be controlled the singular point in the carborundum comprehensively, and so-called singular point mainly is meant the projection or the pit on surface.By the method for multistep control, can gradually reduce the density and the quantity of silicon carbide wafer surface singular point.This is the control method of point defect.
By progressively adjusting, strengthen removal amount, can remove surface scratch fast, this is the control method of line defect.
By progressively adjusting, strengthen removal amount and chemical polishing step by step, can progressively eliminate the damage layer; Also can proofread and correct grinding technics, progressively eliminate planar defects such as brilliant and inclined-plane.
By proofreading and correct repeatedly and optimizing, can change the defective such as warpage, distortion of wafer.
Especially, by the glossing of uniqueness, can obtain high-quality wafer surface, this comprises surperficial no marking and damage layer, and there is good surface roughness on the surface.
The present invention has systematically discussed the efficient and controllable method of silicon carbide wafer Surface Machining, blemish and damage layer have been eliminated to greatest extent by the single-crystal silicon carbide wafer surface that mechanical lapping and chemical polishing obtain, mainly comprise four steps: twin grinding, single face swing arm corase grind, single face swing arm correct grinding, the chemically mechanical polishing of single face swing arm etc. specifically comprise the steps:
(1) the single-crystal silicon carbide crystal is carried out the line cutting, cut into the single-crystal silicon carbide wafer, the thickness of described wafer has more certain allowance than finished product required thickness, through standby after the Chemical cleaning;
(2) the single-crystal silicon carbide wafer after will cleaning carries out twin grinding, and the main wafer surface stria that caused by the line cutting removed is so that obtain flatness preferably; Remove 2/3rds allowance;
(3) the single-crystal silicon carbide wafer after the twin grinding is carried out single face swing arm corase grind, adopt suitable rotating speed, regulate pressure, the main certain thickness of removing makes wafer satisfy thickness requirement, improve the surface roughness after twin grinding is processed,, make things convenient for following process so that obtain good surface roughness; Single-crystal silicon carbide wafer thickness after the corase grind is near the finished product required thickness;
(4) above-mentioned wafer near the finished product required thickness is carried out single face swing arm correct grinding, adopt suitable rotating speed, regulate pressure, the single-crystal silicon carbide wafer surface cut total length behind the correct grinding is no more than the single-crystal silicon carbide wafer radius, and the degree of depth is less than 5 nanometers;
(5) will carry out the chemically mechanical polishing of single face swing arm through the single-crystal silicon carbide wafer behind the above-mentioned correct grinding, single-crystal silicon carbide wafer surface cut total length after the chemically mechanical polishing is not more than the single-crystal silicon carbide wafer radius, and wafer surface roughness (RMS) is less than 0.5 nanometer;
(6) the single-crystal silicon carbide wafer after the polishing encapsulates after cleaning.
Wherein said allowance is meant single-crystal silicon carbide wafer removed thickness in mechanical lapping and chemical polishing process, and according to the requirement of different machining accuracies and thickness, allowance is the 20-200 micron.
Wherein said cleaning is a large granular impurity of removing the absorption of single-crystal silicon carbide wafer surface, and these impurity influence the quality of single-crystal silicon carbide wafer surface in the twin grinding process, or cause unnecessary scuffing etc.
Wherein said twin grinding is meant that the single-crystal silicon carbide wafer is positioned between the upper and lower abrasive disk of twin grinder, and single-crystal silicon carbide upper wafer surface and lower surface are ground simultaneously.The lap speed per minute changeed less than 100 under twin grinding was adopted, and grinding pressure adopts one of following three kinds of established standardses according to different processing requests or is used in combination:
(a) gently press technology, be meant that every 2 inch silicon carbide single-crystal wafer bears the pressure less than 1 kilogram;
(b) pressure technology in is meant that pressure that every 2 inch silicon carbide single-crystal wafer bears is between the 1-3 kilogram;
(c) technostress is meant that pressure that every 2 inch silicon carbide single-crystal wafer bears is greater than 3 kilograms.
The granularity of the diamond abrasive that twin grinding is adopted is the 2-4 micron, and the liquid diamond abrasive that configures is supplied in the mode of continuous flow liquid, and the liquid supply speed per minute is greater than 20 milliliters.
In the wherein said single face swing arm corase grind, silicon carbide wafer uses bonding agent to be bonded on the ceramic disk, ceramic disk is installed on the mechanical lapping arm, when ceramic disk rotates on following abrasive disk, also can move horizontally on the abrasive disk down under the mechanical lapping arm swing, to reduce the unbalance problem of single-crystal silicon carbide wafer surface removal amount that causes when ceramic disk rotates merely: because fast away from the rotational line speed at single-crystal silicon carbide center wafer place, cause the removal amount on this surface, place big, rotational line speed near single-crystal silicon carbide center wafer place is little, cause the removal amount on surface, this place little, thereby make the single-crystal silicon carbide wafer surface plane that departs from objectives become the inclined-plane.The lap speed per minute changes less than 200 under adopting, and the pressure during corase grind adopts one of following two kinds of established standardses according to different processing requests or is used in combination:
(a) gently press technology, be meant that every 2 inch silicon carbide single-crystal wafer bears to be not more than 3 kilograms pressure;
(b) technostress is meant that every 2 inch silicon carbide single-crystal wafer bears the pressure greater than 3 kilograms.
Milling time when adopting light pressure technology is more than 1 hour; Milling time when adopting technostress is more than 1 hour.Diamond abrasive is interrupted supply with Sprayable, on average supplies once second every 3-10, and the supply duration is more than 1 second, and the feeding speed per second is less than 5 milliliters, and the diamond abrasive granularity is below 1 micron.
Wherein said single face swing arm correct grinding is meant, the single-crystal silicon carbide wafer uses bonding agent to be bonded on the ceramic disk, ceramic disk is installed on the mechanical lapping arm, when ceramic disk rotates on following abrasive disk, also can move horizontally on the abrasive disk down under the mechanical lapping arm swing, to reduce the unbalance problem of single-crystal silicon carbide wafer surface removal amount that causes when ceramic disk rotates merely, because it is fast away from the rotational line speed at single-crystal silicon carbide center wafer place, cause the removal amount on this surface, place big, rotational line speed near single-crystal silicon carbide center wafer place is little, cause the removal amount on surface, this place little, thereby make the single-crystal silicon carbide wafer surface plane that departs from objectives become the inclined-plane.Adopt lap speed per minute 10-20 commentaries on classics down, the pressure during correct grinding adopts one of following two kinds of established standardses according to different processing requests or is used in combination:
(a) gently press technology, be meant that every 2 inch silicon carbide wafer bears to be not more than 3 kilograms pressure;
(b) technostress is meant that every 2 inch silicon carbide wafer bears the pressure greater than 3 kilograms.
Milling time when adopting light pressure technology is more than 1 hour; Milling time when adopting technostress is more than 1 hour.Diamond abrasive is interrupted supply with Sprayable, on average supplies once second every 3-7, and the supply duration is more than 1 second, and the feeding speed per second is less than 5 milliliters, and the diamond abrasive granularity is less than 0.5 micron.
Wherein the chemically mechanical polishing of single face swing arm is meant, the single-crystal silicon carbide wafer uses bonding agent to be bonded on the ceramic disk, ceramic disk is installed on the mechanical lapping arm, when ceramic disk rotates on following abrasive disk, also can move horizontally on the abrasive disk down under the mechanical lapping arm swing.Adopting down, lap speed changes for per minute 10-300; According to the processing request difference, select different pressures, the pressure that every 2 inch silicon carbide single-crystal wafer bears is the 3-10 kilogram.The heating of employing infrared lamp, steady temperature is limited in the 10-100 ℃ of scope.Drip hydrogen peroxide discontinuously and come oxide etch single-crystal silicon carbide wafer surface, on average every dripping once more than 2 minutes, each dripping quantity is less than 20 milliliters.Polish abrasive is a silica, and particle mean size (D50) is the 10-100 nanometer, adds in the flow liquid mode, and per minute flow liquid addition is less than 200 milliliters, and polishing time is more than 4 hours according to requirement on machining accuracy.After the chemically mechanical polishing of single face swing arm is finished, single-crystal silicon carbide wafer surface damage layer remove fully or thickness little of being not enough to damage epitaxial growth film and body monocrystalline quality.
Description of drawings
Fig. 1 line cutting back nitrating 6H-SiC surface optical photo;
Fig. 2 is the surface topography after the polishing of nitrating 4H-SiC (0001) silicon face among the embodiment 1;
Fig. 3 is the surface topography after the polishing of nitrating 6H-SiC (0001) silicon face among the embodiment 2;
Fig. 4 is the surface topography after the polishing of semi-insulating 6H-SiC (0001) silicon face among the embodiment 3.
The specific embodiment
Further describe the present invention below by embodiment, but actual attainable technology is not limited to these embodiment.
Embodiment 1:
Step 1: 2 inches nitrating 4H-SiC single-crystal wafers that the line taking cutting is downcut, with SL-2 type cleaning agent, in the 50Hz ultrasonic wave, ultrasonic cleaning 10 minutes, in the 50Hz ultrasonic wave,, stand-by again with absolute ethyl alcohol ultrasonic cleaning 10 minutes.
Step 2: get cleaned wafer, put into twin grinder, regulate pressure, grinding pressure adopts every 1 kilogram of light pressure successively, every 2 kilograms of middle pressures, and every 3 kilograms of weight also regulate the pairing grinding revolution of each section pressure, regulating down, lap speed is that per minute 20 changes, regulating for grinding flow velocity is 30 milliliters of per minutes, begins to process for lapping liquid.After machining, removal amount is 15 microns, takes off wafer and cleans ultrasonic 10 minutes with alcohol in ultrasonic wave, and is stand-by.
Step 3: get the wafer after the twin grinding, use bonding agent to be bonded on the ceramic disk of single face swing arm kibbling mill, regulating down, lap speed is that per minute 50 changes, regulating adding diamond corase grind liquid is every interval 3 seconds spray corase grind liquid 1 second, and spouting liquid is 10 milliliters of per minutes, regulates pressure, every adds 4.5 kilograms of weight and ground 2 hours, every adds 2.5 kilograms light pressure grindings 2 hours again, takes off wafer after machining and cleans ultrasonic 5 minutes with clear water in ultrasonic wave, stand-by.
Step 4: the wafer after the single face swing arm corase grind is put into single face swing arm refiner, wafer uses bonding agent to be bonded on the ceramic disk, regulating down, lap speed is that per minute 10 changes, regulating adding diamond fine grinding fluid is every interval spray in 3 seconds fine grinding fluid 1 second, and spouting liquid is 10 milliliters of per minutes, regulates pressure, every adds 4.5 kilograms of weight and ground 3 hours, every adds 2.5 kilograms light pressure grindings 3 hours again, takes off wafer after machining and cleans ultrasonic 5 minutes with clear water in ultrasonic wave, stand-by.
Step 5: get the wafer after the single face swing arm finish grindes, in ten thousand grades of toilets, put into single face swing arm polishing machine, wafer uses bonding agent to be bonded on the ceramic disk, regulating down, lap speed is that per minute 10 changes, regulating adding polishing fluid flow velocity is 50 milliliters of per minutes, regulate pressure, adopting infrared lamp heat regulation processing temperature constant is 100 ℃, every adds 6 kilograms of weight polishings 12 hours, on average dripped a hydrogen peroxide every 2 minutes and come oxide etch single-crystal silicon carbide wafer surface, each dripping quantity is 10 milliliters.Take off wafer after machining and in ultrasonic wave, clean ultrasonic 5 minutes with pure water, to be cleaned.
Step 6: get the wafer after machining, in hundred grades of toilets, clean encapsulation.
As shown in Figure 2,2 inches SiC wafers after machining, wafer thickness can be accurately in required thickness ± 15 micron, monolithic TTV is less than 15 microns, monolithic BOW is less than 20 microns, monolithic Warp is less than 15 microns, and surface appearance can reach observation cut total length wafer radius under 50 power microscopes, and roughness can reach RMS＜0.5 nanometer.
Embodiment 2:
Step 1: 2 inches nitrating 6H-SiC single-crystal wafers that the line taking cutting is downcut, with SL-2 type cleaning agent, in the 50Hz ultrasonic wave, ultrasonic cleaning 10 minutes, in the 50Hz ultrasonic wave,, stand-by again with absolute ethyl alcohol ultrasonic cleaning 10 minutes.
Step 2: get cleaned wafer, put into twin grinder, regulate pressure, grinding pressure adopts every 1 kilogram of light pressure successively, every 2 kilograms of middle pressures, and every 3 kilograms of weight also regulate the pairing grinding revolution of each section pressure, regulating down, lap speed is that per minute 90 changes, regulating for grinding flow velocity is 100 milliliters of per minutes, begins to process for lapping liquid.After machining, removal amount is 140 microns, takes off wafer and cleans ultrasonic 10 minutes with alcohol in ultrasonic wave, and is stand-by.
Step 3: get the wafer after the twin grinding, use bonding agent to be bonded on the ceramic disk of single face swing arm kibbling mill, regulating down, lap speed is that per minute 180 changes, regulating adding diamond corase grind liquid is every interval 3 seconds spray corase grind liquid 3 seconds, and spouting liquid is 100 milliliters of per minutes, regulates pressure, every adds 4.5 kilograms of weight and ground 1 hour, every adds 2.5 kilograms light pressure grindings 1 hour again, takes off wafer after machining and cleans ultrasonic 5 minutes with clear water in ultrasonic wave, stand-by.
Step 4: the wafer after the single face swing arm corase grind is put into single face swing arm refiner, wafer uses bonding agent to be bonded on the ceramic disk, regulating down, lap speed is that per minute 200 changes, regulating adding diamond fine grinding fluid is every interval spray in 3 seconds fine grinding fluid 3 seconds, and spouting liquid is 100 milliliters of per minutes, regulates pressure, every adds 4.5 kilograms of weight and ground 1 hour, every adds 2.5 kilograms light pressure grindings 1 hour again, takes off wafer after machining and cleans ultrasonic 5 minutes with clear water in ultrasonic wave, stand-by.
Step 5: get the wafer after the single face swing arm finish grindes, in ten thousand grades of toilets, put into single face swing arm polishing machine, wafer uses bonding agent to be bonded on the ceramic disk, regulating down, lap speed is that per minute 300 changes, regulating adding polishing fluid flow velocity is 150 milliliters of per minutes, regulate pressure, adopting infrared lamp heat regulation processing temperature constant is 80 ℃, every adds 8 kilograms of weight polishings 4 hours, on average dripped a hydrogen peroxide every 2 minutes and come oxide etch single-crystal silicon carbide wafer surface, each dripping quantity is 15 milliliters.Take off wafer after machining and in ultrasonic wave, clean ultrasonic 5 minutes with pure water, to be cleaned.
Step 6: get the wafer after machining, in hundred grades of toilets, clean encapsulation.
As shown in Figure 3,2 inches 6H-SiC wafers after machining, wafer thickness can be accurately in required thickness ± 5 micron, monolithic TTV is less than 15 microns, monolithic BOW is less than 20 microns, monolithic Warp is less than 13 microns, and surface appearance can reach observes the cut total length less than wafer radius under 50 power microscopes, and roughness can reach RMS＜0.5 nanometer
Embodiment 3:
Step 1: 2 inches semi-insulating 6H-SiC single-crystal wafers that the line taking cutting is downcut, with SL-2 type cleaning agent, in the 50Hz ultrasonic wave, ultrasonic cleaning 10 minutes, in the 50Hz ultrasonic wave,, stand-by again with absolute ethyl alcohol ultrasonic cleaning 10 minutes.
Step 2: get cleaned wafer, put into twin grinder, regulate pressure, grinding pressure adopts every 1 kilogram of light pressure successively, every 2 kilograms of middle pressures, and every 3 kilograms of weight also regulate the pairing grinding revolution of each section pressure, regulating down, lap speed is that per minute 50 changes, regulating for grinding flow velocity is 60 milliliters of per minutes, begins to process for lapping liquid.After machining, removal amount is 45 microns, takes off wafer and cleans ultrasonic 10 minutes with alcohol in ultrasonic wave, and is stand-by.
Step 3: get the wafer after the twin grinding, use bonding agent to be bonded on the ceramic disk of single face swing arm kibbling mill, regulating down, lap speed is that per minute 90 changes, regulating adding diamond corase grind liquid is every interval 3 seconds spray corase grind liquid 2 seconds, and spouting liquid is 40 milliliters of per minutes, regulates pressure, every adds 4.5 kilograms of weight and ground 1.5 hours, every adds 2.5 kilograms light pressure grindings 1.5 hours again, takes off wafer after machining and cleans ultrasonic 5 minutes with clear water in ultrasonic wave, stand-by.
Step 4: the wafer after the single face swing arm corase grind is put into single face swing arm refiner, wafer uses bonding agent to be bonded on the ceramic disk, regulating down, lap speed is that per minute 90 changes, regulating adding diamond fine grinding fluid is every interval spray in 3 seconds fine grinding fluid 2 seconds, and spouting liquid is 60 milliliters of per minutes, regulates pressure, every adds 4.5 kilograms of weight and ground 2 hours, every adds 2.5 kilograms light pressure grindings 2 hours again, takes off wafer after machining and cleans ultrasonic 5 minutes with clear water in ultrasonic wave, stand-by.
Step 5: get the wafer after the single face swing arm finish grindes, in ten thousand grades of toilets, put into single face swing arm polishing machine, wafer uses bonding agent to be bonded on the ceramic disk, regulating down, lap speed is that per minute 80 changes, regulating adding polishing fluid flow velocity is 80 milliliters of per minutes, regulate pressure, adopting infrared lamp heat regulation processing temperature constant is 70 ℃, every adds 7 kilograms of weight polishings 8 hours, on average dripped a hydrogen peroxide every 2 minutes and come oxide etch single-crystal silicon carbide wafer surface, each dripping quantity is 12 milliliters.Take off wafer after machining and in ultrasonic wave, clean ultrasonic 5 minutes with pure water, to be cleaned.
Step 6: get the wafer after machining, in hundred grades of toilets, clean encapsulation.
As shown in Figure 4,2 inches semi-insulating 6H-SiC wafers after machining, wafer thickness can be accurately in required thickness ± 10 micron, monolithic TTV is less than 15 microns, monolithic BOW is less than 15 microns, monolithic Warp is less than 15 microns, and surface appearance can reach observes the cut total length less than wafer radius under 50 power microscopes, and roughness can reach RMS＜0.5 nanometer.
Just the present invention is described in detail to be noted that the above-mentioned specific embodiment, and it should not be a limitation of the present invention.For the person skilled in the art, when aim that does not depart from claim and scope, the variation of various ways and details can be arranged.
Claims (21)
1. the processing method of a single-crystal silicon carbide wafer, the single-crystal silicon carbide wafer surface that this method obtains by mechanical lapping and chemical polishing have been eliminated blemish and damage layer to greatest extent, it is characterized in that this method comprises the steps:
(1) earlier the single-crystal silicon carbide crystal-cut is become the single-crystal silicon carbide wafer, the thickness of described wafer has more certain allowance than finished product required thickness, and cleans;
(2) the single-crystal silicon carbide wafer after will cleaning carries out twin grinding, to remove about 2/3rds allowance;
(3) the single-crystal silicon carbide wafer after the twin grinding is carried out single face swing arm corase grind, the single-crystal silicon carbide wafer thickness after the corase grind is near the finished product required thickness;
(4) above-mentioned wafer near the finished product required thickness is carried out single face swing arm correct grinding, the single-crystal silicon carbide wafer surface cut total length behind the correct grinding is not more than the single-crystal silicon carbide wafer radius, and the degree of depth is less than 5 nanometers;
(5) will carry out the chemically mechanical polishing of single face swing arm through the single-crystal silicon carbide wafer behind the above-mentioned correct grinding, the single-crystal silicon carbide wafer surface cut total length after the described polishing is not more than the single-crystal silicon carbide wafer radius, and wafer surface roughness (RMS) is less than 0.5 nanometer;
(6) will clean the back encapsulation through the single-crystal silicon carbide wafer after the above-mentioned polishing.
2. according to the method for claim 1, it is characterized in that described allowance is meant single-crystal silicon carbide wafer removed thickness in mechanical lapping and chemical polishing process, according to the requirement of different machining accuracies and thickness, allowance is the 20-200 micron.
3. according to the method for claim 1, it is characterized in that described cleaning is a large granular impurity of removing the absorption of single-crystal silicon carbide wafer surface, these impurity influence the quality of single-crystal silicon carbide wafer surface in the twin grinding process, or cause unnecessary scuffing.
4. according to the method for claim 1, it is characterized in that described twin grinding is meant that the single-crystal silicon carbide wafer is positioned between the upper and lower abrasive disk of twin grinder, single-crystal silicon carbide upper wafer surface and lower surface are ground simultaneously.
5. according to the method for claim 4, it is characterized in that the lap speed per minute changeed less than 100 under described twin grinding was adopted, grinding pressure adopts one of following three kinds of established standardses according to different processing requests or is used in combination:
(a) gently press technology, be meant that every 2 inch silicon carbide single-crystal wafer bears the pressure less than 1 kilogram;
(b) pressure technology in is meant that pressure that every 2 inch silicon carbide single-crystal wafer bears is between the 1-3 kilogram;
(c) technostress is meant that pressure that every 2 inch silicon carbide single-crystal wafer bears is greater than 3 kilograms.
6. according to the method for claim 5, it is characterized in that the granularity of the diamond abrasive that described twin grinding is adopted is the 2-4 micron, the liquid diamond abrasive that configures is supplied in the mode of continuous flow liquid, and the liquid supply speed per minute is greater than 20 milliliters.
7. according to the method for claim 1, it is characterized in that, described single face swing arm corase grind is meant that silicon carbide wafer uses bonding agent to be bonded on the ceramic disk, ceramic disk is installed on the mechanical lapping arm, when ceramic disk rotates on following abrasive disk, also can move horizontally on the abrasive disk down under the mechanical lapping arm swing, to reduce the unbalance problem of single-crystal silicon carbide wafer surface removal amount that causes when ceramic disk rotates merely: because fast away from the rotational line speed at single-crystal silicon carbide center wafer place, cause the removal amount on this surface, place big, rotational line speed near single-crystal silicon carbide center wafer place is little, cause the removal amount on surface, this place little, thereby make the single-crystal silicon carbide wafer surface plane that departs from objectives become the inclined-plane.
8. according to the method for claim 1, it is characterized in that, the lap speed per minute changeed less than 200 under described single face swing arm corase grind adopted, and the pressure that the single-crystal silicon carbide wafer bears during corase grind adopts one of following two kinds of established standardses according to different processing requests or is used in combination:
(a) gently press technology, be meant that every 2 inch silicon carbide single-crystal wafer bears to be not more than 3 kilograms pressure;
(b) technostress is meant that every 2 inch silicon carbide single-crystal wafer bears the pressure greater than 3 kilograms.
9. according to the method for claim 8, it is characterized in that in the described single face swing arm corase grind, the milling time when adopting light pressure technology is more than 1 hour; Milling time when adopting technostress is more than 1 hour.
10. according to the method for claim 8, it is characterized in that diamond abrasive is interrupted supply with Sprayable in the described single face swing arm corase grind, on average supply once second every 3-10, the supply duration is more than 1 second, and the feeding speed per second is less than 5 milliliters, and the diamond abrasive granularity is below 1 micron.
11. method according to claim 1, it is characterized in that, described single face swing arm correct grinding is meant that the single-crystal silicon carbide wafer uses bonding agent to be bonded on the ceramic disk, ceramic disk is installed on the mechanical lapping arm, when ceramic disk rotates on following abrasive disk, also can move horizontally on the abrasive disk down under the mechanical lapping arm swing, to reduce the unbalance problem of single-crystal silicon carbide wafer surface removal amount that causes when ceramic disk rotates merely: because fast away from the rotational line speed at single-crystal silicon carbide center wafer place, cause the removal amount on this surface, place big, rotational line speed near single-crystal silicon carbide center wafer place is little, cause the removal amount on surface, this place little, thereby make the single-crystal silicon carbide wafer surface plane that departs from objectives become the inclined-plane.
12. method according to claim 1, it is characterized in that, described single face swing arm correct grinding adopts lap speed per minute 10-200 commentaries on classics down, and the pressure that the single-crystal silicon carbide wafer bears during correct grinding adopts one of following two kinds of established standardses according to different processing requests or is used in combination:
(a) gently press technology, be meant that every 2 inch silicon carbide single-crystal wafer bears to be not more than 3 kilograms pressure;
(b) technostress is meant that every 2 inch silicon carbide single-crystal wafer bears the pressure greater than 3 kilograms.
13. the method according to claim 12 is characterized in that, in the described single face swing arm correct grinding, the milling time when adopting light pressure technology is more than 1 hour; Milling time when adopting technostress is more than 1 hour.
14. the method according to claim 12 is characterized in that, diamond abrasive is interrupted supply with Sprayable in the described single face swing arm correct grinding, on average supply once second every 3-7, the supply duration is more than 1 second, and the feeding speed per second is less than 5 milliliters, and the diamond abrasive granularity is below 0.5 micron.
15. method according to claim 1, it is characterized in that, the chemically mechanical polishing of described single face swing arm is meant that the single-crystal silicon carbide wafer uses bonding agent to be bonded on the ceramic disk, ceramic disk is installed on the mechanical lapping arm, when ceramic disk rotates on following abrasive disk, also can move horizontally on the abrasive disk down under the mechanical lapping arm swing.
16. the method according to claim 1 is characterized in that, in the chemically mechanical polishing of described single face swing arm, adopting down, lap speed per minute 10-300 changes; According to the processing request difference, select different pressures, the pressure that every 2 inch silicon carbide single-crystal wafer bears is the 3-10 kilogram.
17. the method according to claim 16 is characterized in that, in the chemically mechanical polishing of described single face swing arm, adopts the infrared lamp heating, steady temperature is limited in the 10-100 ℃ of scope.
18. the method according to claim 16 is characterized in that, in the chemically mechanical polishing of described single face swing arm, drips hydrogen peroxide discontinuously and comes oxide etch single-crystal silicon carbide wafer surface, on average every dripping once more than 2 minutes, each dripping quantity is less than 20 milliliters.
19. the method according to claim 16 is characterized in that, in the chemically mechanical polishing of described single face swing arm, polish abrasive is a silica, and particle mean size (D50) is the 10-100 nanometer, adds in the flow liquid mode, and per minute flow liquid addition is less than 200 milliliters.
20. the method according to claim 16 is characterized in that, in the chemically mechanical polishing of described single face swing arm, polishing time is more than 4 hours according to requirement on machining accuracy.
21. the method according to claim 1 is characterized in that, after the chemically mechanical polishing of described single face swing arm, single-crystal silicon carbide wafer surface damage layer remove fully or thickness little of being not enough to damage epitaxial growth film and body monocrystalline quality.
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Address after: 100190, room 1, building 66, No. 2005 East Zhongguancun Road, Beijing, Haidian District Patentee after: BEIJING TIANKE HEDA SEMICONDUCTOR CO., LTD. Patentee after: Research Institute of Physics, Chinese Academy of Sciences Address before: 100190, room 1, building 66, No. 2005 East Zhongguancun Road, Beijing, Haidian District Patentee before: Beijing Tankeblue Semiconductor Co., Ltd. Patentee before: Research Institute of Physics, Chinese Academy of Sciences |
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