CN107717640A - A kind of method of ultrasonic assistant grinding and polishing - Google Patents
A kind of method of ultrasonic assistant grinding and polishing Download PDFInfo
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- CN107717640A CN107717640A CN201610650793.0A CN201610650793A CN107717640A CN 107717640 A CN107717640 A CN 107717640A CN 201610650793 A CN201610650793 A CN 201610650793A CN 107717640 A CN107717640 A CN 107717640A
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- polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of method of ultrasonic assistant grinding and polishing, belong to materials processing technology field.The method of described ultrasonic assistant grinding and polishing is made up of ultrasonic assistant grinding and polishing, polishing machine polishing step.Using pretreatment of the ultrasonic wave to silicon carbide wafer material, the metamorphic layer of a part of material surface can first be taken out, remove a part of impurity of material surface, material surface is activated, then polishing is ground to material using grinder, allows silicon carbide wafer material surface to reach the purpose of high precision.The present invention solves the problems, such as that carborundum is not often high with the surface accurate degree of polishing technology, the features such as using ultrasonic wave to the active force of the high pressure of fluid molecule, substantially increase the surface accuracy of silicon carbide wafer material, surface roughness reduces 11%, has great importance to the transformation for promoting conventional grinding and polishing, development pattern.
Description
Technical field
The invention belongs to materials processing technology field.A kind of more particularly it relates to ultrasonic assistant grinding and polishing
Method.
Background technology
The application of nanometer technology means makes instrument be made that new requirement to the measure of precision of itself, and ultraprecise instrument device
The processing of part becomes more and more important, and this make it that the method for ultraprecise instrument device fabrication is also more and more, and ultrasonic wave is because of it
Distinctive property, fluid molecule can be allowed to produce the high pressure and impulsive force of moment, allow countless drops uniformly to impact and be processed
Workpiece, therefore can be utilized in the grinding and polishing of ultraprecise instrument device instrument.The characteristics of ultrasonic assistant grinding and polishing
It is exactly constantly to impact processed workpiece surface using the dither of supersonic generator, reaches and remove what workpiece surface was left
A kind of lapping mode of metamorphic layer, the mistake of further fine gtinding polishing is then carried out to workpiece surface using polisher lapper
Journey, and the impurity on carbofrax material surface is come off.After rough lapping polishing twice and fine gtinding polishing, make matrix
Surface reaches flat smooth.However, the reason for because of technology so that existing grinding and polishing can not all be accomplished hyperfine well
Grinding and polishing, reduce the efficiency and quality of grinding.
In order to preferably solve the defects of prior art, the present invention is on existing technical foundation is summarized, by substantial amounts of
Experiment and analysis, the present inventor develop a kind of method of ultrasonic assistant grinding and polishing, solve asking for hyperfine abrasive polishing
Topic, improve grinding quality and efficiency.
The content of the invention
Technical problems to be solved]
It is an object of the invention to provide a kind of method of grinding and polishing.
It is a further object to provide the method for the ultrasonic assistant grinding and polishing.
Technical scheme]
The present invention is achieved through the following technical solutions.
The present invention relates to a kind of method of ultrasonic assistant grinding and polishing.
The method and step of described ultrasonic assistant grinding and polishing is as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 50
~ 70 DEG C, measured after the frequency for controlling ultrasonic wave is 30 ~ 40KHz, power is 120 ~ 180W, the time is 10 ~ 30min and treat polishing material
The surface parameter of material, then
B, polishing machine polishing
Polishing machine switch is opened, using diamond paste to ultrasonic wave under 2 ~ 4psi pressure and under 60 ~ 100r/min rotating speeds
What polishing was handled well treats that polishing material is ground polishing, and the time of grinding and polishing is 15 ~ 30S, then
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
A preferred embodiment of the invention, in step, containing in described ultrasonic cleaner can be right
The thermal resistance of liquid heating.
According to another embodiment of the invention, in step, the liquid in described ultrasonic cleaner is distillation
Water, absolute ethyl alcohol etc..
A preferred embodiment of the invention, in step, the temperature of described liquid is 54 ~ 65 DEG C, control
The frequency of ultrasonic wave is 32 ~ 38KHz, the time is 15 ~ 24min, power is 135 ~ 160W.
According to another embodiment of the invention, in step, the temperature of described liquid is 58 ~ 63 DEG C, and control is super
The frequency of sound wave is 34 ~ 36HKz, the time is 18 ~ 20min, power is 140 ~ 150W.
According to one embodiment of the present invention, in stepb, pressure is 2 ~ 3psi, and rotating speed is 70 ~ 95r/min, grinding
The time of polishing is 20 ~ 30s.
According to another preferred embodiment of the present invention, in stepb, pressure is 3 ~ 4psi, and rotating speed is 80 ~ 90r/
Min, the time of grinding and polishing is 20 ~ 25s.
According to one embodiment of the present invention, in step A and C, described surface parameter needs the material of polishing material
Material clearance, the surface roughness for treating polishing material etc..
The present invention is described in more detail below.
The present invention relates to a kind of method of ultrasonic assistant grinding and polishing
The step of this method, is as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 50
~ 70 DEG C, measured after the frequency for controlling ultrasonic wave is 30 ~ 40KHz, power is 120 ~ 180W, the time is 10 ~ 30min and treat polishing material
The surface parameter of material.
What the present invention used treats that polishing material is silicon carbide wafer, because the development of integrated circuit is very rapid, in super large
Scale integrated circuit（ULSI）In, the integrated level of integrated circuit, which has reached each chip, can integrate tens devices, device
The characteristic size of part is less and less, the also more and more higher of the requirement to device substrate substrate crudy.This is due to substrate base
The impurity particle on surface and the stained interface configuration and breakdown characteristics that can seriously affect substrate base, so as to reduce the electronics longevity
Life.The performance and manufacturing cost of Si C base devices are to restrict the industry development key factors such as microelectronics, photoelectron, and device
The performance of part and the crudy on Si C crystal substrates surface are closely related.The surface of Si C crystal substrates after processing
Quality can have direct influence to the machining yield and performance of the devices such as IC.As can be seen here, have ultra-smooth lossless
The Si C crystal substrates for hindering surface have inestimable application prospect.
The liquid in ultrasonic cleaner selected during this is distilled water or absolute ethyl alcohol, distilled water and anhydrous
Ethanol contributes to the clean of silicon carbide wafer material surface, and absolute ethyl alcohol contributes to waving for silicon carbide wafer material surface liquid
Hair, is not required to that the grinding and polishing for next step is further to be cleaned.And help to take away talk it is miscellaneous to the part of wafer surface
Matter.
It is 50 ~ 70 DEG C to be preferably during this in fluid temperature, and this temperature range can improve the heat fortune of fluid molecule
It is dynamic, impulsive force of the fluid molecule to the effective instantaneous pressure of silicon carbide wafer material can be effectively improved, removes carborundum
The metamorphic layer on wafer material surface, if the temperature of liquid is less than 50 DEG C during this, then make it that the warm-up movement of fluid molecule is few,
Not enough acutely, the effect for the metamorphic layer for removing silicon carbide wafer material surface is not reached；If the temperature of liquid is higher than 70 DEG C,
Unnecessary energy loss can be caused.So it is desirable that the temperature of liquid, which is 50 ~ 70 DEG C,.
Frequency, time and the power of ultrasonoscope all have a great impact to the metamorphic layer on silicon carbide wafer material surface.
If its supersonic frequency is less than 30KHz, the purpose of grinding and polishing can not be reached；If its supersonic frequency is higher than 40KHZ, then
Meeting motion intense, silicon carbide wafer material can adsorb the impurity in air, influence the effect of grinding and polishing.Therefore, its supersonic frequency
Rate is that 30 ~ 40KHz is feasible.If its ultrasonic wave added grinding and polishing time is shorter than 10min, assisted milling throwing can not reached
The effect of light；If its ultrasonic wave added grinding and polishing can cause unnecessary energy loss more than 30min.Therefore, its ultrasound
Time is that 10 ~ 30min is desirable.
Similarly, if its ultrasonic wave added grinding and polishing time is shorter than 10min, the effect of assisted milling polishing can not reached
Fruit；If its ultrasonic wave added grinding and polishing can cause unnecessary energy loss more than 30min.Therefore, its ultrasonic time is
10 ~ 30min is desirable.
If ultrasonic power is less than 120W, the effect for removing damaged surface layer can not reached；If its ultrasonic power
More than 180W, then the warm-up movement of molecule can be made violent, the removal to silicon carbide wafer material damaged surface layer can not homogenize.Cause
This, its ultrasonic power is that 120 ~ 180W is desirable.
The ultrasonoscope that the present invention uses is current market sales of product, such as is had by Shenzhen's cleaning equipment of forming an alliance
Limit company with trade name form an alliance board supersonic wave cleaning machine sale product.
Preferably, the temperature of described liquid is 54 ~ 65 DEG C, the frequency for controlling ultrasonic wave is 32 ~ 38KHz, the time be 15 ~
24min, power are 135 ~ 160W.
It is highly preferred that the temperature of described liquid is 58 ~ 63 DEG C, the frequency for controlling ultrasonic wave is 34 ~ 36HKz, the time is
18 ~ 20min, power are 140 ~ 150W.
B, polishing machine polishing
Polishing machine switch is opened, using diamond paste to ultrasonic wave under 2 ~ 4psi pressure and under 60 ~ 100r/min rotating speeds
What polishing was handled well treats that polishing material is ground polishing, and the time of grinding and polishing is 15 ~ 30S.
Using standard ZYP300 grinders, using W1.0 on the market diamond paste to silicon carbide whisker sheet material
Material is ground polishing, and it is in 10 ~ 30S that its polish results, which is shown as in polishing time, and polishing effect result is the surface of material
Roughness significantly reduces and the cut of material surface is few, and grinding polishing effect is obvious.
Pressure, rotating speed and the time of grinder all have a great impact to the metamorphic layer on silicon carbide wafer material surface.Such as
Its pressure of fruit is less than 2psi, then can not be ground polishing to silicon carbide wafer material well；If its pressure is more than 4psi,
Can then cut be caused to silicon carbide wafer material, influence grinding and polishing quality.
Similarly, if rotating speed is less than 60r/min during grinding and polishing, the effect of grinding and polishing can not be functioned well as,
If rotating speed is higher than 100r/min during grinding, silicon carbide wafer material surface can be made to have cut, uneven, reduction grinding and polishing
Effect.
Similarly, if the time of grinding and polishing is less than 15s, the effect of grinding and polishing can not be functioned well as, if
The time of grinding and polishing is higher than 30s, then can make the cut on silicon carbide wafer material surface increase, and is unfavorable for grinding and polishing.
The standard ZYP300 grinders that the present invention uses are current market sales of products, such as by Beijing Da Meidake
The product that skill Co., Ltd is sold with trade name ZYP300 rotary oscillation gravity type polisher lapper.
Preferably, the pressure of described grinder is 2 ~ 3psi, and the rotating speed of grinder is 75 ~ 95r/min, grinding and polishing
Time is 20 ~ 30s.
It is highly preferred that the pressure of described grinder is 3 ~ 4psi, the rotating speed of grinder is 85 ~ 90r/min5, and grinding is thrown
The time of light is 20 ~ 25s.
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Belt grinding polishing material needs the surface roughness after determination test and material removing rate.Surface extra coarse degree refers to
The distance between its two crest of material surface or two troughs, it belongs to microcosmic geometric error.Surface roughness is smaller, then the surface moon
It is smooth.Surface roughness has a great impact to the service condition of part.In general, surface roughness value is smaller, can carry
High fit quality, abrasion is reduced, extend part service life etc..
The instrument for the measurement surface roughness that the present invention uses is that TR200 Manual roughness devices are productions on the market
Product, such as the product sold by Chongqing Li Bo Instrument Ltd. with trade name TR200 Manual roughness devices.
After silicon carbide wafer material is using ultrasonic assistant grinding and polishing its table is measured with TR200 Manual roughness devices
Surface roughness, then, to silicon carbide wafer material grinding and polishing, its grinding and polishing result is carborundum with ZYP300 grinders
The surface roughness of wafer material substantially reduces, and the cut of material surface is few, positive effect.Its polishing effect is more preferably, faster
Speed.
At the same time, polishing is ground using the silicon carbide wafer without ultrasonic assistant grinding and polishing, it is polished
As a result show, without ultrasonic assistant grinding and polishing silicon carbide wafer material surface roughness apparently higher than at ultrasonic wave
Silicon carbide wafer after reason.
It can be clearly seen the ultrasonic assistant grinding and polishing using the present invention to silicon carbide wafer material by the above results
Surface property significantly improves.
The ultrasonic assistant grinding and polishing of the present invention has following features：
A, ultrasonic assistant of the invention is simple to operate, requirement to material is few.
B, ultrasonic assistant grinding and polishing efficiency high of the invention, excellent effect.
Beneficial effect]
The beneficial effects of the invention are as follows：Pass through the pretreatment of ultrasonic wave, after silicon carbide wafer material grinding and polishing, silicon carbide whisker
The scratch on sheet material surface is few, surface roughness is low, pretreatment of the present invention using ultrasonic wave as silicon carbide wafer material, utilization
The property of ultrasonic wave in itself, a part of metamorphic layer on a part of carborundum lens materials surface is removed, and to silicon carbide whisker sheet material
The impurity on material surface is come off.Then after being polished by rough lapping polishing twice and fine gtinding, stromal surface is made to reach flat
It is whole smooth, the quality of grinding and polishing is improved, has obtained the silicon carbide wafer material of higher surface accuracy.
Embodiment
The present invention is will be better understood that by following embodiments.
The ultrasonic assistant grinding and polishing of embodiment 1
The implementation steps of the embodiment are as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 50
DEG C, after the frequency for controlling ultrasonic wave is 30KHz, power 120W, time are 10min measurement treat the surface parameter of polishing material,
Then
B, polishing machine polishing
Open polishing machine switch, under 2psi pressure and 60r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 15S, then
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.525 μm, table after ultrasonic assistant polishing
Surface roughness is that 0.492 μm of uses standard ZYP300 grinders, and silicon carbide wafer material is carried out using diamond paste
Grinding and polishing, its grinding and polishing result are that the surface roughness Ra of silicon carbide wafer material is 0.120 μm, and it is thick relatively to polish preceding surface
Rugosity substantially reduces, and material surface scratch is few, and material surface is uniform, functional.
Embodiment 2：Ultrasonic assistant grinding and polishing
The implementation steps of the embodiment are as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 55
DEG C, after the frequency for controlling ultrasonic wave is 32KHz, power 140W, time are 20min measurement treat the surface parameter of polishing material,
Then
B, polishing machine polishing
Open polishing machine switch, under 3psi pressure and 70r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 20S, then
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.516 μm, table after ultrasonic assistant polishing
Surface roughness is that 0.489 μm of uses standard ZYP300 grinders, and silicon carbide wafer material is carried out using diamond paste
Grinding and polishing, its grinding and polishing result are that the surface roughness Ra of silicon carbide wafer material is 0.123 μm, and it is thick relatively to polish preceding surface
Rugosity substantially reduces, and material surface scratch is few, and material surface is uniform, functional.
Embodiment 3：Ultrasonic assistant grinding and polishing
The implementation steps of the embodiment are as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 60
DEG C, after the frequency for controlling ultrasonic wave is 34KHz, power 150W, time are 30min measurement treat the surface parameter of polishing material,
Then
B, polishing machine polishing
Open polishing machine switch, under 3psi pressure and 90r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 25S, then
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.527 μm, table after ultrasonic assistant polishing
Surface roughness is that 0.496 μm of uses standard ZYP300 grinders, and silicon carbide wafer material is carried out using diamond paste
Grinding and polishing, its grinding and polishing result are that the surface roughness Ra of silicon carbide wafer material is 0.125 μm, and it is thick relatively to polish preceding surface
Rugosity substantially reduces, and material surface scratch is few, and material surface is uniform, functional.
Embodiment 4：Ultrasonic assistant grinding and polishing
The implementation steps of the embodiment are as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 65
DEG C, after the frequency for controlling ultrasonic wave is 36KHz, power 160W, time are 25min measurement treat the surface parameter of polishing material,
Then
B, polishing machine polishing
Open polishing machine switch, under 2psi pressure and 100r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 30S, then
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.521 μm, table after ultrasonic assistant polishing
Surface roughness is that 0.489 μm of uses standard ZYP300 grinders, and silicon carbide wafer material is carried out using diamond paste
Grinding and polishing, its grinding and polishing result are that the surface roughness Ra of silicon carbide wafer material is 0.114 μm, and it is thick relatively to polish preceding surface
Rugosity substantially reduces, and material surface scratch is few, and material surface is uniform, functional.
Embodiment 5：Ultrasonic assistant grinding and polishing
The implementation steps of the embodiment are as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 70
DEG C, after the frequency for controlling ultrasonic wave is 38KHz, power 170W, time are 18min measurement treat the surface parameter of polishing material,
Then
B, polishing machine polishing
Open polishing machine switch, under 4psi pressure and 85r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 20S, then
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.530 μm, table after ultrasonic assistant polishing
Surface roughness is that 0.498 μm of uses standard ZYP300 grinders, and silicon carbide wafer material is carried out using diamond paste
Grinding and polishing, its grinding and polishing result are that the surface roughness Ra of silicon carbide wafer material is 0.119 μm, and it is thick relatively to polish preceding surface
Rugosity substantially reduces, and material surface scratch is few, and material surface is uniform, functional.
Embodiment 6：Ultrasonic assistant grinding and polishing
The implementation steps of the embodiment are as follows：
A, ultrasonic lapping-polishing
The material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 60
DEG C, after the frequency for controlling ultrasonic wave is 40KHz, power 180W, time are 28min measurement treat the surface parameter of polishing material,
Then
B, polishing machine polishing
Open polishing machine switch, under 4psi pressure and 95r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 25S, then
C, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.518 μm, table after ultrasonic assistant polishing
Surface roughness is that 0.491 μm of uses standard ZYP300 grinders, and silicon carbide wafer material is carried out using diamond paste
Grinding and polishing, its grinding and polishing result are that the surface roughness Ra of silicon carbide wafer material is 0.116 μm, and it is thick relatively to polish preceding surface
Rugosity substantially reduces, and material surface scratch is few, and material surface is uniform, functional.
Comparative example 1：Direct grinding and polishing
The implementation steps of the embodiment are as follows：
Use the silicon carbide wafer material in embodiment 1
A, polishing machine polishing
Open polishing machine switch, under 4psi pressure and 95r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 25S, then
B, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.518 μm, is ground using standard ZYP300
Machine, grinding and polishing is carried out to silicon carbide wafer material using diamond paste, its grinding and polishing result is silicon carbide wafer
The surface roughness Ra of material is 0.133 μm, and surface roughness substantially reduces before relatively polishing, and material surface scratch is few, material table
Face is uniform, functional.
Contrasted with embodiment 1, the polishing material surface roughness Ra after experiment substantially carries compared with ultrasonic assistant grinding and polishing
Height, it can be clearly seen that ultrasonic assistant grinding and polishing can improve the surface accuracy of material by above-mentioned experimental result, improve superficiality
Energy.
Comparative example 2：Direct grinding and polishing
The implementation steps of the embodiment are as follows：
Use the silicon carbide wafer material in embodiment 2
A, polishing machine polishing
Open polishing machine switch, under 4psi pressure and 95r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 25S, then
B, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.518 μm, is ground using standard ZYP300
Machine, grinding and polishing is carried out to silicon carbide wafer material using diamond paste, its grinding and polishing result is silicon carbide wafer
The surface roughness Ra of material is 0.139 μm, and surface roughness substantially reduces before relatively polishing, and material surface scratch is few, material table
Face is uniform, functional.
Contrasted with embodiment 2, the polishing material surface roughness Ra after experiment substantially carries compared with ultrasonic assistant grinding and polishing
Height, it can be clearly seen that ultrasonic assistant grinding and polishing can improve the surface accuracy of material by above-mentioned experimental result, improve superficiality
Energy.
Comparative example 3：Direct grinding and polishing
The implementation steps of the embodiment are as follows：
Use the silicon carbide wafer material in embodiment 3
A, polishing machine polishing
Open polishing machine switch, under 4psi pressure and 95r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 25S, then
B, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.527 μm, is ground using standard ZYP300
Machine, grinding and polishing is carried out to silicon carbide wafer material using diamond paste, its grinding and polishing result is silicon carbide wafer
The surface roughness Ra of material is 0.136 μm, and surface roughness substantially reduces before relatively polishing, and material surface scratch is few, material table
Face is uniform, functional.
Contrasted with embodiment 3, the polishing material surface roughness Ra after experiment substantially carries compared with ultrasonic assistant grinding and polishing
Height, it can be clearly seen that ultrasonic assistant grinding and polishing can improve the surface accuracy of material by above-mentioned experimental result, improve superficiality
Energy.
Comparative example 4：Direct grinding and polishing
The implementation steps of the embodiment are as follows：
Use the silicon carbide wafer material in embodiment 4
A, polishing machine polishing
Open polishing machine switch, under 4psi pressure and 95r/min rotating speeds under using diamond paste to ultrasonic lapping-polishing at
That has managed treats that polishing material is ground polishing, and the time of grinding and polishing is 25S, then
B, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
Experiment measures, and the surface roughness of silicon carbide wafer material before processing is 0.521 μm, is ground using standard ZYP300
Machine, grinding and polishing is carried out to silicon carbide wafer material using diamond paste, its grinding and polishing result is silicon carbide wafer
The surface roughness Ra of material is 0.128 μm, and surface roughness substantially reduces before relatively polishing, and material surface scratch is few, material table
Face is uniform, functional.
Contrasted with embodiment 4, the polishing material surface roughness Ra after experiment substantially carries compared with ultrasonic assistant grinding and polishing
Height, it can be clearly seen that ultrasonic assistant grinding and polishing can improve the surface accuracy of material by above-mentioned experimental result, improve superficiality
Energy.
After being pre-processed before being polished using ultrasonic assistant grinding and polishing so that the rough surface of silicon carbide wafer material
Degree is obvious to reduce by 11% so that the surface accuracy of silicon carbide wafer material significantly improves, while surface property also significantly improves.
Claims (8)
- A kind of 1. method of ultrasonic assistant grinding and polishing, it is characterised in that as follows the step of this method：A, ultrasonic lapping-polishingThe material of polishing to be ground is placed in ultrasonic cleaner, and control liquid in ultrasonic cleaner temperature be 50 ~ 70 DEG C, measured after the frequency for controlling ultrasonic wave is 30 ~ 40KHz, power is 120 ~ 180W, the time is 10 ~ 30min and treat polishing material The surface parameter of material, thenB, polishing machine polishingPolishing machine switch is opened, using diamond paste to ultrasonic wave under 2 ~ 4psi pressure and under 60 ~ 100r/min rotating speeds What polishing was handled well treats that polishing material is ground polishing, and the time of grinding and polishing is 15 ~ 30S, thenC, after grinding and polishing terminates, measure treats the surface parameter of polishing material.
- 2. the method for ultrasonic assistant grinding and polishing according to claim 1, it is characterised in that in step A, described is super Contain the thermal resistance that can be heated to liquid in sound wave rinse bath.
- 3. the method for ultrasonic assistant grinding and polishing according to claim 1, it is characterised in that in step A, described is super Liquid in sound wave rinse bath is distilled water, absolute ethyl alcohol etc..
- 4. the method for ultrasonic assistant grinding and polishing according to claim 1, it is characterised in that in step A, described liquid The temperature of body is 54 ~ 65 DEG C, and the frequency for controlling ultrasonic wave is 32 ~ 38KHz, the time is 15 ~ 24min, power is 135 ~ 160W.
- 5. the method for ultrasonic assistant grinding and polishing according to claim 1, it is characterised in that in step A, described liquid The temperature of body is 58 ~ 63 DEG C, and the frequency for controlling ultrasonic wave is 34 ~ 36HKz, the time is 18 ~ 20min, power is 140 ~ 150W.
- 6. the method for ultrasonic assistant grinding and polishing according to claim 1, it is characterised in that in step B, described pressure Power is 2 ~ 3psi, and rotating speed is 70 ~ 95r/min, and the time of grinding and polishing is 20 ~ 30s.
- 7. the method for ultrasonic assistant grinding and polishing according to claim 1, it is characterised in that in step B, described pressure Power is 3 ~ 4psi, and rotating speed is 85 ~ 90r/min, and the time of grinding and polishing is 20 ~ 25s.
- 8. the method for ultrasonic assistant grinding and polishing according to claim 1, body characteristicses are described in step A and C Surface parameter needs the material removing rate of polishing material, the surface roughness for treating polishing material etc..
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| CN201610650793.0A CN107717640A (en) | 2016-08-10 | 2016-08-10 | A kind of method of ultrasonic assistant grinding and polishing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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