CN108747597A - A kind of alumina ceramic substrate method of surface finish - Google Patents
A kind of alumina ceramic substrate method of surface finish Download PDFInfo
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- CN108747597A CN108747597A CN201810378590.XA CN201810378590A CN108747597A CN 108747597 A CN108747597 A CN 108747597A CN 201810378590 A CN201810378590 A CN 201810378590A CN 108747597 A CN108747597 A CN 108747597A
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- 239000000758 substrate Substances 0.000 title claims abstract description 190
- 238000000034 method Methods 0.000 title claims abstract description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000005498 polishing Methods 0.000 claims abstract description 93
- 238000000227 grinding Methods 0.000 claims abstract description 88
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000000919 ceramic Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 239000012188 paraffin wax Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000003082 abrasive agent Substances 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 230000007306 turnover Effects 0.000 claims abstract description 8
- 239000008188 pellet Substances 0.000 claims abstract description 6
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 239000000498 cooling water Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000003350 kerosene Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000010257 thawing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000001993 wax Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 310 Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
- B24B29/06—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces for elongated workpieces having uniform cross-section in one main direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention is a kind of alumina ceramic substrate method of surface finish, and this method includes the fixation and stickup of substrate, and substrate and auxiliary silica silicon sheet are pasted onto jointly on ceramic carrier；The grinding of substrate, grinding wheel are ground substrate material removal with intermediate feeding mode；The attrition process of substrate, using fixed abrasive material, the grinding wheel that removal grinding leaves prints；The high speed polishing of substrate carries out high speed polishing using fixation polishing pellet to substrate；The chemically mechanical polishing of substrate is polished using nano silicon dioxide polishing fluid；The dismounting of substrate, substrate front after processing is completed, under substrate is dismantled from ceramic carrier；The turn-over of substrate is fixed, and paraffin is melted, and substrate turn-over is equally fixed with front；The reverse side of substrate is thinned, and the most thick position thickness of substrate is machined to a value on desired upper limit value, the thickness of substrate is accurately controlled by grinding-measurement-grinding circulation step.The method of the present invention process time is short, high yield rate, at low cost.
Description
Technical field
The present invention relates to alumina ceramic substrate processing technique fields, and in particular to a kind of alumina ceramic substrate surface adds
Work method.
Background technology
Alumina ceramic substrate is that suitable raw mineral materials sintering is added in 96%~99% alumina ceramic material
Made of electronic ceramic substrate, play support base to film circuit element and outer proper element.Due to alumina ceramic-base
Piece has that high temperature resistant, electrical insulation capability is good, dielectric constant and dielectric loss are low, thermal conductivity is big, chemical stability is good, with element
The advantages that similar thermal expansion coefficient, and it is cheap, thus it is widely used in thin film integrated circuit, thickness/film hybrid integrated
In circuit and various film components (such as thin-film capacitor, PTC resistor).As the electronic ceramic substrate of substrate, thickness and
Surface quality is highly important index, thus needs to be machined aluminium oxide ceramics to obtain required thickness and table
Surface roughness.
Existing alumina ceramic substrate processing method has grinding, machining, laser processing, ultrasonic wave processing, height
Press abrasive waterjet cutting.Since alumina ceramic material belongs to difficult-to-machine material, processing cost, most common processing side are considered
Method is grinding.There are the processing of single side grinding and polishing and Two sides milling and polishing processing in grinding again.Single side grinding and polishing
Polishing efficiency and surface quality are superior to Two sides milling and polishing.Clamping workpiece passes through in erratic star wheel retainer when twin polishing
Wandering star movement is done in being engaged between polishing disk up and down for center shaft gear and outer ring tooth, the workpiece which is generated due to gear engagement
It beats larger, abrasive material is relatively low to the removal efficiency of workpiece, and the surface losses of generation are more.The technological process of single side grinding and polishing is
Patch wax, grinding, chemically mechanical polishing, dismounting, reverse side are thinned.When single side grinding and polishing pastes wax, the thickness of wax cannot be accomplished uniformly
Unanimously.Pasting the substrate completed and being placed in polisher lapper coordinates lapping liquid to be ground polishing using abrasive disk.Use grinding
Liquid is processed substrate, be easy to cause the waste of material, and grinding and polishing is inefficient.Due to wax paste inhomogeneities,
It causes substrate surface height inconsistent, is directly ground, can be wasted because pressure is unevenly distributed and causes material removal efficiency low
Lapping liquid.Substrate surface roughness after grinding is big, is directly chemically-mechanicapolish polished, and required polishing time can be very long,
And it is not readily available high-quality surface.In reverse side reduction steps, if carried out using lapping mode, need to take a significant amount of time,
It is thinned using diamond wheel grinding, and is susceptible to chipping problem, improve rejection rate.And be thinned with wheel grinding, grinding wheel is real
The border amount of feeding and the removal amount for being centainly equal to substrate thickness, thickness are not easy to control.
Invention content
The object of the present invention is to overcome the problems of the prior art, provides a kind of alumina ceramic substrate surface processing
Method.
To realize above-mentioned technical purpose and the technique effect, the invention is realized by the following technical scheme：
A kind of alumina ceramic substrate method of surface finish, this approach includes the following steps：
Step 1）The fixation and stickup of substrate cut auxiliary silica silicon sheet identical with substrate thickness, and melted by heat
Substrate and auxiliary silica silicon sheet are pasted onto on ceramic carrier by paraffin jointly；
Step 2）The ceramic carrier for being fixed with substrate is placed on grinding machine by the grinding of substrate, and grinding wheel is with intermediate feeding side
Formula is ground substrate material removal, keeps substrate surface highly consistent；
Step 3）The attrition process of substrate applies pressure by dead axle using fixed abrasive material to substrate on ceramic carrier is fixed on
Power is rotated by pallet and substrate is driven to be ground around System of Rotating about Fixed Axis, and it is thick to reduce substrate surface for the grinding wheel print that removal grinding leaves
Rugosity improves substrate planarity；
Step 4）The high speed polishing of substrate, using fixation polishing pellet and step 3）In abrasive working appts to substrate carry out
High speed polishing, it is primary per high speed polishing, stock removal polishing disk is modified, the substrate after high speed polishing is finally cleaned, removes substrate surface
Polishing residue, further decrease substrate surface roughness；
Step 5）The chemically mechanical polishing of substrate, first preheats polishing pad, and stability contorting polish temperature uses nanometer titanium dioxide later
Silicon polishing liquid is polished, and with micro- sem observation substrate surface quality, is entered in next step after reaching requirement；
Step 6）The dismounting of substrate, substrate front after processing is completed, under substrate is dismantled from ceramic carrier；
Step 7）The turn-over of substrate is fixed, will be paraffin melting on ceramic carrier, measures four edges of each substrate
Thickness, its turn-over is equally fixed with front；
Step 8）The reverse side of substrate is thinned, using wheel grinding, by the most thick position thickness of substrate be machined to desired upper limit value it
On one value, the thickness of substrate is accurately controlled by grinding-measurement-grinding circulation step.
Further, the step 1）In, the flatness and the depth of parallelism of ceramic carrier are below 2um, using paraffin plus
Heat, which is melted, to be uniformly applied on ceramic carrier, places substrate and auxiliary silica silicon sheet, substrate is given on air press
And auxiliary silica silicon sheet pressurizes 10 minutes, and it is 5 minutes cooling, so that substrate is completely steadily attached to the disk of ceramic carrier
On, auxiliary silica silicon sheet length is equal with the substrate length of side, and auxiliary silica silicon sheet is pasted close to substrate when stickup, apart
5mm after cooling and shaping, the paraffin of auxiliary silica silicon sheet and substrate surface is scraped off with blade, kerosene is used in combination to clean.
Further, the step 2）In, the ceramic carrier for being fixed with substrate is placed on grinding machine magnetic recording level platform, ceramics are held
The top iron block in load plate edge is fixed, wheel grinding substrate material removal, the preferred bronze binding agent skive of grinding wheel, grinding wheel
For mesh number in -500 mesh of 300 mesh, speed of grinding wheel spindle is 1500rpm or 3000rpm, and magnetic recording level platform uses crushing before work,
Keep its flatness good, grinding wheel does axial feed and vertical feeding, and vertical feeding depth is not more than 5um, moves axially to every time
Ceramic carrier center can return, grinding is close to 100um depth when the grinding of front, by observing substrate surface form,
Until judgement substrate surface is highly consistent.
Further, the step 2）In, chamfering is cut out using laser in substrate each edge, to prevent chipping.
Further, the step 3）In, use diamond particles size for the fixed abrasive material of 40um, when grinding, with water
Do coolant liquid, and the corresponding cooling water pipeline of setting, to improve grinding efficiency, when grinding is about interruption cooling water supply
3min, substrate thickness reduce about 20um, until substrate surface is printed without grinding wheel, substrate is polished 20s, interfered by grinding 1min or so
Substrate planarity is observed under instrument, dead axle position is adjusted according to substrate planarity, to improve flatness.
Further, the step 4）In, polishing disk rotating speed 300rpm-400rpm, duration 3min or so when polishing, per high
Speed polishing is primary, using it is brown it is beautiful modify stock removal polishing disk, polishing disk rotating speed 50-80rpm, duration 1min, after polishing when finishing
Substrate, which is placed in dilute hydrochloric acid solution, impregnates 10min, and clear water remains in the copper powder on surface when washing away grinding and polishing.
Further, the step 5）In, before polishing, polishing pad is preheated using hot water, polish temperature is controlled in 40-45
DEG C, polishing uses nano silicon dioxide polishing fluid, polishes grit particles size 40nm, and polishing fluid is using being preceding diluted with water, ratio
It is 1:4, pH value is about 10, polishing disk rotating speed 50rpm, air pressure 0.3Mpa, polishes microscopically observation substrate surface matter after 20min
It measures, result continues to adjust the polishing of swing arm position or dismounting according to the observation.
Further, the step 7）In, ceramic carrier is put in the hot water, it will be paraffin melting.
Further, the step 8）In, thickness 10um on desired limiting value after being thinned with the most thin position of substrate
On the basis of, substrate is thinned, the substrate after being thinned is ground on grinder, removes the grinding wheel print of reverse side, and controls thickness
Degree often mill a period of time, measures thickness change, until meeting the requirements.
The beneficial effects of the invention are as follows:
1. processing method using the present invention, process time is short, and the process time of a disk substrate is foreshortened to by original 2.5h
1.5h, efficiency improve 40%, cost-effective；
2. high yield rate, yield rate is improved by original 75% to 90%, ensures the thickness of finished product within desired size range；
3. finished surface roughness is low, 95% finished surface roughness improves during wheel grinding, substrate within 20nm
The a large amount of chipping problems occurred, and improve and polished for a long time in chemical-mechanical polishing step and surface quality is not obviously changed
Kind problem.
Description of the drawings
Fig. 1 is the process flow diagram of the present invention；
Fig. 2 is that schematic diagram is fixed and pasted to the substrate of the present invention；
Fig. 3 is the grinding schematic diagram of the present invention；
Fig. 4 is the grinding and polishing stereoscopic schematic diagram of the present invention；
Fig. 5 is the grinding and polishing main view of the present invention to schematic diagram.
Figure label explanation：101, ceramic carrier, 103, substrate, 105, auxiliary silica silicon sheet, 202, magnetic recording level platform,
204, grinding wheel spindle, 206, grinding wheel, 307, pallet, 308, dead axle, 309, fixed abrasive material, 310, cooling water pipeline.
Specific implementation mode
It is below with reference to the accompanying drawings and in conjunction with the embodiments, next that the present invention will be described in detail.
As shown in Figure 1, a kind of alumina ceramic substrate method of surface finish, this approach includes the following steps：
Step 1）The fixation and stickup of substrate 103 cut auxiliary silica silicon sheet 105 identical with 103 thickness of substrate, and lead to
It overheats the paraffin melted substrate 103 and auxiliary silica silicon sheet 105 are pasted onto jointly on ceramic carrier 101；
Step 2）The ceramic carrier 101 for being fixed with substrate 103 is placed on grinding machine, grinding wheel 206 by the grinding of substrate 103
It is ground 103 material removal of substrate with intermediate feeding mode, keeps 103 apparent height of substrate consistent；
Step 3）The attrition process of substrate 103 is fixed on ceramic carrier 101 using fixed abrasive material 309 by dead axle 308
Upper substrate 103 applies pressure, is rotated by pallet 307 and substrate 103 is driven to be ground around the rotation of dead axle 308, and removal grinding is stayed
Under grinding wheel print, reduce by 103 surface roughness of substrate, improve 103 flatness of substrate；
Step 4）The high speed polishing of substrate 103, using fixation polishing pellet and step 3）In abrasive working appts to substrate
103 carry out high speed polishing, primary per high speed polishing, modify stock removal polishing disk, finally clean the substrate 103 after high speed polishing, go
Except the polishing residue on 103 surface of substrate, 103 surface roughness of substrate is further decreased；
Step 5）The chemically mechanical polishing of substrate 103, first preheats polishing pad, and stability contorting polish temperature uses nanometer two later
Silica polishing fluid is polished, and with micro- 103 surface quality of sem observation substrate, is entered in next step after reaching requirement；
Step 6）After processing is completed, substrate 103 is dismantled from ceramic carrier 101 for the dismounting of substrate 103,103 front of substrate
Under；
Step 7）The turn-over of substrate 103 is fixed, will be paraffin melting on ceramic carrier 101, measures each substrate 103 4
The thickness of edge, its turn-over is equally fixed with front；
Step 8）The reverse side of substrate 103 is thinned, and is ground using grinding wheel 206, and the most thick position thickness of substrate 103 is machined to requirement
A value on upper limit value, the thickness of substrate 103 is accurately controlled by grinding-measurement-grinding circulation step.
As shown in Fig. 2, the step 1）In, the flatness and the depth of parallelism of ceramic carrier 101 are below 2um, using stone
Wax heating and melting is uniformly applied on ceramic carrier 101, places substrate 103 and auxiliary silica silicon sheet 105, is pneumatically being added
It pressurizes 10 minutes to substrate 103 and auxiliary silica silicon sheet 105 on press, it is 5 minutes cooling, so that substrate 103 is completely stablized
Ground is attached in the disk of ceramic carrier 101, and 105 length of auxiliary silica silicon sheet is equal with 103 length of side of substrate, and when stickup is auxiliary
Silica thin slice 105 is helped to be pasted close to substrate 103, after 5mm, cooling and shaping, by auxiliary silica silicon sheet 105 and base
The paraffin on 103 surface of piece is scraped off with blade, and kerosene is used in combination to clean.
As shown in figure 3, the step 2）In, the ceramic carrier 101 for being fixed with substrate 103 is placed on grinding machine magnetic recording level platform
On 202, the top iron block in 101 edge of ceramic carrier is fixed, and grinding wheel 206 is ground 103 material removal of substrate, and grinding wheel 206 is preferred
Bronze binding agent skive 206,206 mesh number of grinding wheel in -500 mesh of 300 mesh, 204 rotating speed of grinding wheel spindle be 1500rpm or
3000rpm, magnetic recording level platform 202 are modified before work with grinding wheel 206, keep its flatness good, grinding wheel 206 do axial feed with it is vertical
Feeding, vertical feeding depth every time be not more than 5um, move axially to 101 center of ceramic carrier can return, front mill
Grinding is close to 100um depth when cutting, by observing 103 configuration of surface of substrate, until judgement 103 apparent height of substrate is consistent.
The step 2）In, chamfering is cut out using laser in 103 each edge of substrate, to prevent chipping.
As shown in Figure 4 and Figure 5, the step 3）In, it uses diamond particles size for the fixed abrasive material 309 of 40um, grinds
When mill, coolant liquid, and the corresponding cooling water pipeline 310 of setting are done with water, interruption cooling water supply is ground to improve grinding efficiency
3min is about when mill, 103 thickness of substrate reduces about 20um, until 103 surface of substrate is printed without grinding wheel, grinding 1min or so, by substrate
103 polishing 20s, observe 103 flatness of substrate under interferometer, 308 position of dead axle are adjusted according to 103 flatness of substrate, to change
Kind flatness.
The step 4）In, it polishes the fixed polishing pellet used and fixation in patent ZL201310157546.3 can be used
Polish pellet, polishing disk rotating speed 300rpm-400rpm when polishing, when a length of 3min-5min, it is primary per high speed polishing, using palm fibre
Jade finishing stock removal polishing disk, polishing disk rotating speed 50-80rpm, duration 1min when finishing, the substrate 103 after polishing are placed on dilute salt
10min is impregnated in acid solution, clear water remains in the copper powder on surface when washing away grinding and polishing.
The step 5）In, before polishing, polishing pad is preheated using hot water, polish temperature is controlled at 40-45 DEG C, and polishing is adopted
With nano silicon dioxide polishing fluid, grit particles size 40nm is polished, polishing fluid is using being preceding diluted with water, ratio 1:4, pH value
About 10, polishing disk rotating speed 50rpm, air pressure 0.3Mpa polish 103 surface quality of microscopically observation substrate after 20min, according to
Observation result continues to adjust the polishing of swing arm position or dismounting.
The step 7）In, ceramic carrier 101 is put in the hot water, it will be paraffin melting.
The step 8）In, rear thickness is thinned on desired limiting value on the basis of 10um by the most thin position of substrate 103,
Substrate 103 is thinned, the substrate 103 after being thinned is ground on grinder, removes the grinding wheel print of reverse side, and controls thickness,
Often mill a period of time measures thickness change, until meeting the requirements.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of alumina ceramic substrate method of surface finish, which is characterized in that this approach includes the following steps：
Step 1）The fixation and stickup of substrate cut auxiliary silica silicon sheet identical with substrate thickness, and melted by heat
Substrate and auxiliary silica silicon sheet are pasted onto on ceramic carrier by paraffin jointly；
Step 2）The ceramic carrier for being fixed with substrate is placed on grinding machine by the grinding of substrate, and grinding wheel is with intermediate feeding side
Formula is ground substrate material removal, keeps substrate surface highly consistent；
Step 3）The attrition process of substrate applies pressure by dead axle using fixed abrasive material to substrate on ceramic carrier is fixed on
Power is rotated by pallet and substrate is driven to be ground around System of Rotating about Fixed Axis, and it is thick to reduce substrate surface for the grinding wheel print that removal grinding leaves
Rugosity improves substrate planarity；
Step 4）The high speed polishing of substrate, using fixation polishing pellet and step 3）In abrasive working appts to substrate carry out
High speed polishing, it is primary per high speed polishing, stock removal polishing disk is modified, the substrate after high speed polishing is finally cleaned, removes substrate surface
Polishing residue, further decrease substrate surface roughness；
Step 5）The chemically mechanical polishing of substrate, first preheats polishing pad, and stability contorting polish temperature uses nanometer titanium dioxide later
Silicon polishing liquid is polished, and with micro- sem observation substrate surface quality, is entered in next step after reaching requirement；
Step 6）The dismounting of substrate, substrate front after processing is completed, under substrate is dismantled from ceramic carrier；
Step 7）The turn-over of substrate is fixed, will be paraffin melting on ceramic carrier, measures four edges of each substrate
Thickness, its turn-over is equally fixed with front；
Step 8）The reverse side of substrate is thinned, using wheel grinding, by the most thick position thickness of substrate be machined to desired upper limit value it
On one value, the thickness of substrate is accurately controlled by grinding-measurement-grinding circulation step.
2. alumina ceramic substrate method of surface finish according to claim 1, which is characterized in that the step 1）In,
The flatness and the depth of parallelism of ceramic carrier are below 2um, are uniformly applied on ceramic carrier, are put using heating paraffin thawing
Substrate and auxiliary silica silicon sheet are set, is pressurizeed 10 minutes to substrate and auxiliary silica silicon sheet on air press,
It is 5 minutes cooling, so that substrate is completely steadily attached in the disk of ceramic carrier, auxiliary silica silicon sheet length and substrate side
Length is equal, and auxiliary silica silicon sheet is pasted close to substrate when stickup, after 5mm, cooling and shaping, auxiliary silica silicon is thin
The paraffin of piece and substrate surface is scraped off with blade, and kerosene is used in combination to clean.
3. alumina ceramic substrate method of surface finish according to claim 1, which is characterized in that the step 2）In,
The ceramic carrier for being fixed with substrate is placed on grinding machine magnetic recording level platform, the ceramics carrying top iron block of plate edge is fixed, grinding wheel mill
Substrate material removal, the preferred bronze binding agent skive of grinding wheel are cut, grinding wheel mesh number turns in -500 mesh of 300 mesh, grinding wheel spindle
Speed is 1500rpm or 3000rpm, and magnetic recording level platform uses crushing before work, keeps its flatness good, grinding wheel does axial feed
With vertical feeding, vertical feeding depth is not more than 5um every time, move axially to ceramic carrier center can return, just
Grinding is close to 100um depth when face is ground, by observing substrate surface form, until judgement substrate surface is highly consistent.
4. alumina ceramic substrate method of surface finish according to claim 1 or 3, which is characterized in that the step 2）
In, chamfering is cut out using laser in substrate each edge, to prevent chipping.
5. alumina ceramic substrate method of surface finish according to claim 1, which is characterized in that the step 3）In,
It uses diamond particles size for the fixed abrasive material of 40um, when grinding, coolant liquid, and the corresponding cooling water pipe of setting is done with water
Road, interruption cooling water supply is to improve grinding efficiency, and when grinding is about 3min, and substrate thickness reduces about 20um, until substrate surface
Substrate is polished 20s, substrate planarity is observed under interferometer, according to substrate planarity tune by no grinding wheel print, grinding 1min or so
Shaft position is adjusted, to improve flatness.
6. alumina ceramic substrate method of surface finish according to claim 1, which is characterized in that the step 4）In,
Polishing disk rotating speed 300rpm-400rpm when polishing, duration 3min or so, it is primary per high speed polishing, it is thrown using brown beautiful finishing is primary
CD, polishing disk rotating speed 50-80rpm, duration 1min when finishing, the substrate after polishing, which is placed in dilute hydrochloric acid solution, to be impregnated
10min, clear water remain in the copper powder on surface when washing away grinding and polishing.
7. alumina ceramic substrate method of surface finish according to claim 1, which is characterized in that the step 5）In,
Before polishing, polishing pad is preheated using hot water, polish temperature is controlled at 40-45 DEG C, and polishing uses nano silicon dioxide polishing fluid,
Grit particles size 40nm is polished, polishing fluid is using being preceding diluted with water, ratio 1:4, pH value is about 10, polishing disk rotating speed
50rpm, air pressure 0.3Mpa polish microscopically observation substrate surface quality after 20min, and result continues to adjust swing arm according to the observation
Position polishes or dismounting.
8. alumina ceramic substrate method of surface finish according to claim 1, which is characterized in that the step 7）In,
Ceramic carrier is put in the hot water, it will be paraffin melting.
9. alumina ceramic substrate method of surface finish according to claim 1, which is characterized in that the step 8）In,
Rear thickness is thinned by the most thin position of substrate on the basis of 10um, substrate is thinned on desired limiting value, the substrate after being thinned,
It is ground on grinder, removes the grinding wheel print of reverse side, and control thickness, often mill a period of time, measure thickness change, until
It meets the requirements.
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