CN105070545B - A kind of single-layer capacitor BaTiO3The surface treatment method of ceramic substrate - Google Patents
A kind of single-layer capacitor BaTiO3The surface treatment method of ceramic substrate Download PDFInfo
- Publication number
- CN105070545B CN105070545B CN201510521913.2A CN201510521913A CN105070545B CN 105070545 B CN105070545 B CN 105070545B CN 201510521913 A CN201510521913 A CN 201510521913A CN 105070545 B CN105070545 B CN 105070545B
- Authority
- CN
- China
- Prior art keywords
- selection
- substrate
- surface treatment
- disk
- treatment method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention discloses a kind of surface treatment method of single-layer capacitor BaTiO3 ceramic substrates, comprises the following steps：1）The selection of abrasive disk；（2）The selection of lapping liquid；（3）The selection of planet carrier；（4）First grind and polish afterwards, the control of grinding rate is that grinding rate is 8~10 μm/min, and polishing speed is 3~4 μm/min, and breeding control is controlled in 30min in 3~5kg, milling time section；（5）It is well mixed with one kind in deionized water, alcohol, acetone and cleaning agent or concentration, it is cleaned by ultrasonic 30min in the range of 40~50 DEG C, 250~300W of power；（6）After surface treatment, substrate is heat-treated, condition is 500~600 DEG C, soaking time 2hr；The recovery type cutting machine can protect the environment of plant, prevent cutting fluid contaminated site.
Description
Technical field
The present invention relates to surface-mounting ceramic Element Technology field, especially relates to a kind of single-layer capacitor and uses
The surface treatment method of BaTi03 ceramic substrates.
Background technology
BaTiO3Ceramics as a kind of conventional electronic component prepare material, with preferable ferroelectricity, piezoelectricity, pressure-resistant
And insulating properties, it is widely used in manufacture Ceramic sensible devices.
BaTiO3The technique that ceramic substrate employs high temperature sintering during synthesis so that the ceramic base prepared
There is deformation, surface relief injustice, the excessively high undesirable element of surface roughness value in piece, has had a strong impact on ceramic substrate conduct
Bonding degree in the performance and assembling process of electronic component.
Surface treatment for this ceramic material, it is at present to use one side or two-sided lapping mode more.Due to processing
Method is improper and the characteristics of toughness of material is big, hardness is small, after substrate grinding surface scratch, surface hole, difference in thickness to be present more
Greatly, phenomena such as substrate is broken, serious waste is caused in ceramic substrate cost and utilization rate.
The content of the invention
It is an object of the invention to overcome the shortcomings of existing process technology, there is provided a kind of easier, more reasonably two-sided to grind
The surface treatment method of mill, the method can effectively improve ceramic substrate using the material for grinding off ceramic substrate surface
Thickness evenness, surface smoothness and surface roughness.
To solve the above problems, the present invention adopts the following technical scheme that：
A kind of single-layer capacitor surface treatment method of BaTiO3 ceramic substrates, comprises the following steps：
(1) selection of abrasive disk：With one kind in copper dish, aluminium dish, cast iron plate, ceramic disk, pleuche disk and cashmere disk or
It is several；
(2) selection of lapping liquid：Abrasive grain selection for 2~20 μm diamond, carborundum, aluminum oxide, silica and
One or more in cerium oxide, itself and deionized water, dispersant, lubricant, the proportioning of surfactant are 1:10:
0.002:0.01:0.002 or mixed with the one or more in deionized water, dispersant, lubricant, surfactant
Close uniform liquid；
(3) selection of planet carrier：With FR-4 glass mats, epoxy resin, the one or more in plastics are motherboard system
Make planet carrier, its thickness is more than or equal to substrate thickness；
(4) first grind and polish afterwards, the control of grinding rate is that grinding rate is 8~10 μm/min, and polishing speed is 3~4
μm/min, breeding controls to be controlled in 30min in 3~5kg, milling time section；
(5) it is well mixed with the one or more in deionized water, alcohol, acetone and cleaning agent, at 40~50 DEG C, power
It is cleaned by ultrasonic 30min in the range of 250~300W；
(6) after being surface-treated, substrate is heat-treated, condition is 500~600 DEG C, soaking time 2hr.
Further, suitable for I, II dielectric ceramics substrate.
The beneficial effects of the invention are as follows：Using self-control lapping liquid and simple Pilkington twin process, under the protection of planet carrier
Ensure the integrality of ceramic substrate, also improve the thickness evenness of substrate；Additionally, due to the distinct configuration of lapping liquid, effectively
Control substrate surface roughness and reduce the difficulty of substrate cleaning, further increase the qualification rate of ceramic substrate.
Embodiment
Embodiment one：
A kind of single-layer capacitor is directly to be ground to BaTiO3 ceramic substrates with the surface treatment method of BaTiO3 ceramics
Required thickness, roughness reach 100~200nm.After the ceramic substrate sintered is sorted out well by dimensions, selection is thick
Degree, substrate of the same size are surface-treated.Ceramic base of the present embodiment using size as 30.8mmm × 30.8mm × 0.35mm
Piece, it is ground to exemplified by thickness 0.15mm：
(1) planet carrier that selection and ceramic substrate can be completely closely sealed, its material is high-quality glass mat (FR -4),
Epoxy resin, the one or more in plastics.As adaptation is problematic, please handled in time with blade or scissors；
(2) select one or more of as grinding in copper dish, aluminium dish, cast iron plate, ceramic disk, pleuche disk and cashmere disk
Disk, by planet carrier and ceramic substrate placed on lower abrasive disk it is appropriate after, cover top lap, start 10~20 μm of gold of supply
The lapping liquid of one or more of mixed liquors in hard rock, carborundum, aluminum oxide, silica and cerium oxide, flow rate are
500ml/hr；
(3) rotating speed of abrasive disk is adjusted：Preceding 1~2min speed is 5~10r/min, afterwards 30~37r/min, grinding
Time is 20~25min, and being ground to thickness can terminate for (0.15 ± 0.01) mm；
(4) ground ceramic substrate is taken out from abrasive disk by the way of vacuum WAND；
(5) substrate of taking-up is put into cleaning fluid, wherein the configuration of cleaning fluid is with deionized water, alcohol, acetone and clear
One or more in lotion are well mixed, and are cleaned by ultrasonic 30min in the range of 40~50 DEG C, 250~300W of power；
(6) after cleaning, substrate is put into baking oven, and heat dries 3~5min in the range of 40~60 DEG C, you can takes out test surfaces
Roughness, the present embodiment test result is between 100--~200nm；
(7) heat treatment process of substrate, 550 DEG C of insulation 2hr in Muffle furnace.
Embodiment two：
A kind of single-layer capacitor is directly to be ground to BaTiO3 ceramic substrates with the surface treatment method of BaTiO3 ceramics
Required thickness, roughness reach 60~90nm, after the ceramic substrate sintered is sorted out well by dimensions, selection thickness,
Substrate of the same size is surface-treated.Ceramic substrate of the present embodiment using size as 30.8mmm × 30.8mm × 0.35mm,
It is ground to exemplified by thickness 0.15mm：
(1) planet carrier that selection and ceramic substrate can be completely closely sealed, its material are one kind in PBC plates, polyurethane, such as
Adaptation is problematic, is please handled in time with blade or scissors；
(2) select one or more of as grinding in copper dish, aluminium dish, cast iron plate, ceramic disk, pleuche disk and cashmere disk
Disk, by planet carrier and ceramic substrate placed on lower abrasive disk it is appropriate after, cover top lap, start 10~20 μm of gold of supply
The lapping liquid of one or more of mixed liquors in hard rock, carborundum, aluminum oxide, silica and cerium oxide, flow rate are
500ml/hr；
(3) rotating speed of abrasive disk is adjusted：Preceding 1~2min speed is 5~10r/min, afterwards 30~37r/min, grinding
Time is 15~20min, and being ground to thickness can terminate for (0.20 ± 0.01) mm；
(4) ground ceramic substrate is taken out from abrasive disk by the way of vacuum WAND, cleaned with cleaning fluid dry
Only, then dry；
(5) one or more in copper dish, cast iron plate, aluminium dish and cashmere disk are selected as abrasive disk, by after drying again
It is secondary to be put on abrasive disk, top lap is covered, starts 2~10 μm of diamonds of supply, carborundum, aluminum oxide, silica and oxidation
The lapping liquid of one or more of mixed liquors in cerium, flow rate 500ml/hr；
(6) rotating speed of abrasive disk is adjusted：Preceding 1~2min speed is 3~5r/min, afterwards 10~20r/min, during grinding
Between be 20~25min, being ground to thickness can terminate for (0.15 ± 0.01) mm；
(7) substrate of taking-up is put into cleaning fluid, wherein the configuration of cleaning fluid is with deionized water, alcohol, acetone and clear
One or more in lotion are well mixed, and are cleaned by ultrasonic 30min in the range of 40~50 DEG C, 250~300W of power；
(8) after cleaning, substrate is put into baking oven, and heat dries 3~5min in the range of 40~60 DEG C, you can takes out test surfaces
Roughness.The present embodiment test result is within the scope of 60~90nm；
(9) heat treatment process of substrate, 550 DEG C of insulation 2hr in Muffle furnace.
The beneficial effects of the invention are as follows：Using self-control lapping liquid and simple Pilkington twin process, under the protection of planet carrier
Ensure the integrality of ceramic substrate, also improve the thickness evenness of substrate；Additionally, due to the distinct configuration of lapping liquid, effectively
Control substrate surface roughness and reduce the difficulty of substrate cleaning, further increase the qualification rate of ceramic substrate.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
The change or replacement expected without creative work, it should all cover within the scope of the present invention.
Claims (2)
1. a kind of single-layer capacitor surface treatment method of BaTiO3 ceramic substrates, it is characterised in that comprise the following steps：
(1) selection of abrasive disk：With the one or more in copper dish, aluminium dish, cast iron plate, ceramic disk, pleuche disk and cashmere disk；
(2) selection of lapping liquid：Diamond, carborundum, aluminum oxide, silica and the oxidation that abrasive grain selection is 2~20 μm
One or more of mixed liquors in cerium are as lapping liquid；
(3) selection of planet carrier：Planet carrier is made by motherboard of the one or more in FR-4 glass mats, epoxy resin,
And thickness is more than or equal to substrate thickness；
(4) first to grind and polish afterwards, the control of grinding rate is 8~10 μm/min of grinding rate, and polishing speed is 3~4 μm/min,
Breeding control is controlled in 30min in 3~5kg, milling time section；
(5) it is well mixed with the one or more in deionized water, alcohol, acetone, at 40~50 DEG C, 250~300W's of power
Wide-ultra sound wave cleans 30min；
(6) after being surface-treated, substrate is heat-treated, condition is 500~600 DEG C, soaking time 2hr.
2. a kind of surface treatment method of single-layer capacitor BaTiO3 ceramic substrates as claimed in claim 1, its feature exist
In：Suitable for I, II dielectric ceramics substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510521913.2A CN105070545B (en) | 2015-08-24 | 2015-08-24 | A kind of single-layer capacitor BaTiO3The surface treatment method of ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510521913.2A CN105070545B (en) | 2015-08-24 | 2015-08-24 | A kind of single-layer capacitor BaTiO3The surface treatment method of ceramic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105070545A CN105070545A (en) | 2015-11-18 |
| CN105070545B true CN105070545B (en) | 2017-11-14 |
Family
ID=54499889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510521913.2A Active CN105070545B (en) | 2015-08-24 | 2015-08-24 | A kind of single-layer capacitor BaTiO3The surface treatment method of ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105070545B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107833723A (en) * | 2017-12-04 | 2018-03-23 | 中国振华集团云科电子有限公司 | Substrate surface treatment process and chip capacity, film resistor process for making |
| CN109092792B (en) * | 2018-09-25 | 2020-09-29 | 福建毫米电子有限公司 | Ceramic substrate surface treatment method |
| CN109365313A (en) * | 2018-10-15 | 2019-02-22 | 广东风华高新科技股份有限公司 | A kind of method for separating of crack ceramic body |
| CN114377957A (en) * | 2021-12-24 | 2022-04-22 | 湖南艾迪奥电子科技有限公司 | Method and device for continuously and automatically cleaning MLCC (multi-layer ceramic capacitor) after chamfering |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4263354A (en) * | 1978-11-13 | 1981-04-21 | Wilhelm Westermann | Demetalizing a metalized, plastic foil along a strip or edge portion |
| CN1116150A (en) * | 1994-04-19 | 1996-02-07 | 株式会社村田制作所 | Production of piezoelectric ceramic vibrator |
| CN102786879A (en) * | 2012-07-17 | 2012-11-21 | 清华大学 | Barium titanate chemico-mechanical polishing aqueous composition and its application |
| CN104276820A (en) * | 2013-07-12 | 2015-01-14 | 佳能株式会社 | Piezoelectric material, piezoelectric element, and electronic equipment |
-
2015
- 2015-08-24 CN CN201510521913.2A patent/CN105070545B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4263354A (en) * | 1978-11-13 | 1981-04-21 | Wilhelm Westermann | Demetalizing a metalized, plastic foil along a strip or edge portion |
| CN1116150A (en) * | 1994-04-19 | 1996-02-07 | 株式会社村田制作所 | Production of piezoelectric ceramic vibrator |
| CN102786879A (en) * | 2012-07-17 | 2012-11-21 | 清华大学 | Barium titanate chemico-mechanical polishing aqueous composition and its application |
| CN104276820A (en) * | 2013-07-12 | 2015-01-14 | 佳能株式会社 | Piezoelectric material, piezoelectric element, and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105070545A (en) | 2015-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105070545B (en) | A kind of single-layer capacitor BaTiO3The surface treatment method of ceramic substrate | |
| CN103921205B (en) | A kind of 6 inches of lithium niobate crystal chips or the production technology of lithium tantalate wafer | |
| CN104669106A (en) | Double-surface grinding and double-surface polishing high-efficiency ultraprecise processing method for large-sized A-directional sapphire mobile phone screen | |
| CN102019582B (en) | Polishing process of 8-inch polished wafers doped with silicon lightly | |
| EP3347165B1 (en) | Abrasive rotary tool with abrasive agglomerates | |
| CN100500375C (en) | Semi-sessile abrasive grain polishing method of plane stainless steel | |
| US10029941B2 (en) | Machining methods of forming laminated glass structures | |
| CN102172859B (en) | Processing method for ultrathin plain glass based on consolidated abrasive | |
| CN107309784A (en) | A kind of two-sided fine grinding technology of sapphire cover plate | |
| CN107771168A (en) | The method that edge finishing is carried out to laminated glass construction | |
| KR20140013929A (en) | Method of polishing film, polishing film | |
| CN102814725B (en) | A kind of chemical and mechanical grinding method | |
| CN102837227A (en) | Liquid polishing method of single crystal silicon wafer | |
| CN107614202A (en) | The manufacture method of grinding pad and grinding pad | |
| TW201238712A (en) | Polishing method of glass plate | |
| CN108358436A (en) | Glass phone cover processing method | |
| CN103943491A (en) | Method for flattening surface of substrate by adopting CMP in pinboard process | |
| CN106711032A (en) | High-efficiency and low-damage grinding method suitable for hard-brittle and easy-cleavage single crystal gallium oxide wafer | |
| CN206436115U (en) | Sapphire substrate lapping device | |
| CN101564829A (en) | Polishing method of light ceramic tile | |
| CN103128648B (en) | Chemical machinery lapping device and method of processing crystal plates in lapping process | |
| CN105171583A (en) | Preparing method for sapphire touch screen panel | |
| WO2013078934A1 (en) | Chemical mechanical polishing method for reducing residual slurry | |
| CN105171940B (en) | Manufacturing method for sapphire frame-free touch screen panel | |
| CN101972981A (en) | Large-diameter crystal wafer chamfering tool and chamfering method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 511453 No.6, Changli Road, Dongyong Town, Nansha District, Guangzhou City, Guangdong Province Patentee after: Guangzhou Tianji Electronic Technology Co.,Ltd. Address before: 510000 the west side of the fifth floor of No.10 building, No.5 Industrial Zone, South Huaxi Enterprise Group Co., Ltd., daganwei, Haizhu District, Guangzhou City, Guangdong Province Patentee before: AURORA TECHNOLOGIES Co.,Ltd. |