CN103943491A - Method for flattening surface of substrate by adopting CMP in pinboard process - Google Patents
Method for flattening surface of substrate by adopting CMP in pinboard process Download PDFInfo
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- CN103943491A CN103943491A CN201410173271.7A CN201410173271A CN103943491A CN 103943491 A CN103943491 A CN 103943491A CN 201410173271 A CN201410173271 A CN 201410173271A CN 103943491 A CN103943491 A CN 103943491A
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000000227 grinding Methods 0.000 claims abstract description 62
- 229920000642 polymer Polymers 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000004642 Polyimide Substances 0.000 claims abstract description 9
- 229920001721 polyimide Polymers 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 22
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- 239000006061 abrasive grain Substances 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 230000001788 irregular Effects 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- VAJVDSVGBWFCLW-UHFFFAOYSA-N 3-Phenyl-1-propanol Chemical compound OCCCC1=CC=CC=C1 VAJVDSVGBWFCLW-UHFFFAOYSA-N 0.000 claims description 2
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropyl alcohol Natural products CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 claims description 2
- 230000006641 stabilisation Effects 0.000 claims description 2
- 238000011105 stabilization Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 229920001909 styrene-acrylic polymer Polymers 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
- H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a method for flattening the surface of a substrate by adopting CMP in a pinboard process, wherein the substrate is made of polymer or of other materials with the polymer coated. The imido degree of the polymer is closely related to the grinding speed of the CMP, and specific solidification processing is carried out on the substrate made of the polymer or of the other materials with the polymer coated to obtain high grinding speed. The polymer is polyimide or styrene acrylic dibutene, the evenness of the surface processed through the CMP can be less than one percent, two to three steps of CMP with the grinding speed from high to low are carried out, and cleaning is carried out after grinding. According to the method for flattening the surface of the substrate by adopting the CMP in the pinboard process, the substrate made of cheap materials with the polymer coated is adopted or the substrate made of the polymer is adopted directly, compared with a traditional silicon substrate, the cost can be lowered greatly, the evenness of the surface is better, follow-up etching, CVD, PVD, Lithography processes are prepared well, and the possibility that 3D integration is developed towards high density and high precision directions is achieved.
Description
Technical field
The present invention relates to a kind of method that substrate surface before adopting CMP to deep hole etching carries out planarization in keyset technique, belong to technical field of manufacturing semiconductors.
Background technology
Adopt the technology of silicon (Si) keyset relatively ripe, surface uniformity is good, but cost is high.In keyset (interposer) technique taking polymer (as polyimides polyimide or benzocyclobutene BCB) as substrate, polymeric substrates surface uniformity (uniformity) is about +/-10%, be that thickness is that the amounts of thickness variation (TTV) of the substrate surface of 40um is for 4um, bad surface uniformity can be to subsequent etching, and PVD and plating cause harmful effect.At present common method be utilize CVD at substrate surface cvd silicon oxide as insulating barrier, but this process costs is higher, technological process complexity.In addition, adopt polyimides spin coating proceeding, spin coating proceeding itself can carry out coarse planarization by effects on surface, but its degree of planarization is very low, has substantially still retained original pattern of substrate surface, and surface uniformity does not reach superintegrated requirement.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide the method that adopts cmp CMP to carry out planarization to the front substrate surface of deep hole etching (Via) in the keyset technique of a kind of polymeric substrates or the surperficial substrate that is covered with polymer, to obtain good surface uniformity.
According to technical scheme provided by the invention, the described method that adopts CMP substrate surface to be carried out to planarization in keyset technique, comprises the following steps:
(1) provide polymeric substrates or surface to be covered with the substrate of polymer, on substrate, the thickness of polymer increases by 10% ~ 15% as CMP grind on the basis of technological requirement; Described polymer is polyimides or phenylpropyl alcohol dibutene;
(2) aforesaid substrate is cured to processing, makes polymer surfaces contact angle be less than 70 degree;
(3) before deep hole etching, adopt CMP effects on surface to carry out planarization, reach surface uniformity and be 1% planarization requirement; Be specially and adopt 2 ~ 3 step grinding rates CMP from high to low to grind, and after grinding, carry out clean; Select following consumptive material:
(a) colloidal grinding liquid, wherein abrasive grains comprises silica, cerium oxide, or aluminium oxide; Abrasive grains magnitude range is 5 ~ 160nm; In lapping liquid, the content of abrasive grains is within the scope of 0.01wt% ~ 20wt%; PH should be greater than 7; Lapping liquid comprises the material (as glycerine) of the interior viscosity stabilization of the temperature range of 20 ~ 80oC between 18 mPa ﹒ s ~ 300 mPa ﹒ s;
(b) activated polymer surface, accelerates the additive that polymer is hydrolyzed, and comprising: deionized water, potassium hydroxide, or Tetramethylammonium hydroxide;
(c) the flexible abrasive pad that the hard grinding pad of hardness between 50 shore D and 60 shore D and hardness are less than 50 shore D is used in conjunction with.
Wherein step (2) to the method for processing substrate is: under 125 ~ 250 degree celsius temperature conditions, toast 30 ~ 60 minutes.
The technical process that step (3) is carried out two step CMP grindings is as follows:
(3.1) adopt high pressure (3psi ~ 4psi) at the first grinding table, high rotating speed (100rpm ~ 130rpm), lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate that is greater than 1um/min to irregular substrate surface with this understanding and grinds roughly;
(3.2) adopt pressure 0.2psi ~ 2psi at the second grinding table, rotating speed 40 ~ 70rpm carries out second step CMP grinding technics with the grinding rate lower than 1um/min on flexible abrasive pad.
The technical process that step (3) is carried out three step CMP grindings is as follows:
(3.1) adopt higher grinding head pressure (3psi ~ 4psi) at the first grinding table, high rotating speed (100rpm ~ 130rpm), lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate that is greater than 1um/min to irregular substrate surface with this understanding and grinds roughly;
(3.2) adopt the grinding head pressure of 2psi ~ 3psi at the second grinding table, the process conditions of high rotating speed (100rpm ~ 130rpm) lapping liquid flow 150ml/min ~ 300ml/min, use and grind low grinding rate than the first step and carry out second step fine grinding;
(3.3) adopt pressure 0.2psi ~ 2psi at the 3rd grinding table, rotating speed 40 ~ 70rpm carries out the 3rd step CMP grinding technics on flexible abrasive pad.
Further, the described grinding pad of step (5) microvoid polyurethane material density used is 0.13 ~ 1.6g/cm
3.
Advantage of the present invention is:
One, in keyset technique, utilize polymer (as polyimide or BCB) to replace silicon (Si) as substrate, cost can reduce greatly;
Two, utilize CMP polymeric substrates or the other materials substrate that is covered with polymer to be carried out planarization and can be obtained the surface uniformity of <1%;
Three, the imidization degree of polymer can affect CMP grinding rate largely, therefore can be by adjusting polymeric material, and curing process, temperature and time increases CMP grinding rate, reduces costs.
Embodiment
Below in conjunction with embodiment, the invention will be further described.The present invention specifically comprises the following steps:
1) overlie polymer (as Polyimide or BCB) on polymeric substrates or other material (as glass, pottery etc.) substrate, its detailed process comprises spin coating, spraying etc.The thickness of polymer should increase by 10% ~ 15% as CMP grind on the basis of technological requirement.As: technological requirement substrate thickness is 40um, and the actual spin coating thickness of polymer should be about 45um so, and 5um thickness is as CMP grind.
2), before CMP, polymeric substrates or the other materials substrate that is covered with polymer are cured to processing.Under 150 ~ 250 degree celsius temperature conditions, toast about 30min ~ 60min.Make polymer surfaces contact angle be less than 70 degree, so that polymer has hydrolysis rate faster under the effect of CMP lapping liquid, maintain higher grinding rate.
3) adopt the method for cmp (CMP) to carry out planarization to substrate surface, reaching surface uniformity is the planarization requirement of <1%.
Select following consumptive material:
(a) colloidal grinding liquid (colloidal slurry), comprises silica lapping liquid, cerium oxide abrasive liquid, or alumina lap liquid, and the abrasive grains magnitude range in lapping liquid is 5 ~ 160nm; In lapping liquid, the content of abrasive grains is within the scope of 0.01wt% ~ 20wt%; The pattern of abrasive grains (Abrasive) also comprises the different morphologies such as circle, pointed shape; In lapping liquid, should contain viscosity stabilized (>18 mPa ﹒ s and <300 mPa ﹒ material (as: glycerine) s) under 20 ~ 80 degree process environments.
(b) can increase the additive (as: deionized water DIW, potassium hydroxide KOH, Tetramethylammonium hydroxide THAM) of polymer surfaces activity, in factory, business feed end adds in lapping liquid.
(c) grinding pad (Pad): two kinds, hard grinding pad and flexible abrasive pad.Comprise various surface grooves patterns (groove pattern) and the degree of depth (groove depth).Described hard grinding pad hardness (Pad hardness) should be between 50 shore D and 60 shore D, flexible abrasive pad hardness <50 shore D.Grinding pad microvoid polyurethane material (microcellular polyurethane) density used should be 0.13 ~ 1.6g/cm
3.
Technical process is as follows:
(1) adopt 2 ~ 3 step CMP grinding technics.Wherein the first step and second step can once complete, but consider production efficiency (throughput) and surface smoothness, and three step grinding technics have more advantage.
(a) rough polishing.Adopt the technique of high grinding rate (>1um/min) to carry out the first step to polymeric substrates surface grinds roughly at the first grinding table;
(b) half essence is thrown.Second step fine gtinding is carried out on polymeric substrates surface after the second grinding table adopts lower grinding rate (>0.5um/min, and <1um/min) to corase grind;
(c) essence is thrown.Adopt the lower grinding rate than second step on flexible abrasive pad (politex pad), to carry out the 3rd step grinding at the 3rd grinding table.
(2) grind rear clean.
(a) utilize ultra-pure water (DIW) and ultrasonic wave (Megasonic) vibrations to remove the larger particle in surface.
(b) in chemical reagent (as: CX-100, Japanese Wako Pure Chemical Industries, Ltd. Wako Pure Chemical Industries, Ltd.), utilize soft brushing away except being attached on surperficial particle.
(c) utilize isopropyl alcohol (IPA) and mechanical force to be dried polymeric substrates surface.
The present invention carries out cmp (CMP) to polymeric substrates (as polyimide or BCB) or the other materials substrate that is covered with polymer, obtain good surface uniformity (<1%, be that thickness is that the substrate surface amounts of thickness variation of 10um is only for 0.1um), thus the more integrated reliability of the less live width of high density is increased.
Claims (6)
1. in keyset technique, adopt CMP substrate surface to be carried out to the method for planarization, it is characterized in that, comprise the following steps:
(1) provide polymeric substrates or surface to be covered with the substrate of polymer, on substrate, the thickness of polymer increases by 10% ~ 15% as CMP grind on the basis of technological requirement; Described polymer is polyimides or phenylpropyl alcohol dibutene;
(2) aforesaid substrate is cured to processing, makes polymer surfaces contact angle be less than 70 degree;
(3) before deep hole etching, adopt CMP effects on surface to carry out planarization, reach surface uniformity and be 1% planarization requirement; Be specially and adopt 2 ~ 3 step grinding rates CMP from high to low to grind, and after grinding, carry out clean; Select following consumptive material:
(a) colloidal grinding liquid, wherein abrasive grains comprises silica, cerium oxide, or aluminium oxide; Abrasive grains magnitude range is 5 ~ 160nm; In lapping liquid, the content of abrasive grains is within the scope of 0.01wt% ~ 20wt%; PH should be greater than 7; Lapping liquid comprises the material of the interior viscosity stabilization of the temperature range of 20 ~ 80oC between 18 mPa ﹒ s ~ 300 mPa ﹒ s;
(b) activated polymer surface, accelerates the additive that polymer is hydrolyzed, and comprising: deionized water, potassium hydroxide, or Tetramethylammonium hydroxide;
(c) the flexible abrasive pad that the hard grinding pad of hardness between 50 shore D and 60 shore D and hardness are less than 50 shore D is used in conjunction with.
2. in keyset technique, adopt as claimed in claim 1 CMP substrate surface to be carried out to the method for planarization, it is characterized in that, step (2) to the method for processing substrate is: under 125 ~ 250 degree celsius temperature conditions, toast 30 ~ 60 minutes.
3. in keyset technique, adopt as claimed in claim 1 CMP substrate surface to be carried out to the method for planarization, it is characterized in that, the described 2 step CMP grinding technics processes of step (3) are as follows:
(3.1) adopt pressure 3psi ~ 4psi at the first grinding table, rotating speed 100rpm ~ 130rpm, lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate that is greater than 1um/min to irregular substrate surface with this understanding and grinds roughly;
(3.2) adopt pressure 0.2psi ~ 2psi at the second grinding table, rotating speed 40 ~ 70rpm carries out second step CMP grinding technics with the grinding rate lower than 1um/min on flexible abrasive pad.
4. in keyset technique, adopt as claimed in claim 1 CMP substrate surface to be carried out to the method for planarization, it is characterized in that, the technical process that the described 3 step CMP of step (3) grind is as follows:
(3.1) adopt grinding head pressure 3psi ~ 4psi at the first grinding table, rotating speed 100rpm ~ 130rpm, lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate that is greater than 1um/min to irregular substrate surface with this understanding and grinds roughly;
(3.2) adopt the grinding head pressure of 2psi ~ 3psi at the second grinding table, rotating speed 100rpm ~ 130rpm, the process conditions of lapping liquid flow 150ml/min ~ 300ml/min, use and grind low grinding rate than the first step and carry out second step fine grinding;
(3.3) adopt pressure 0.2psi ~ 2psi at the 3rd grinding table, rotating speed 40 ~ 70rpm carries out the 3rd step CMP grinding technics on flexible abrasive pad.
5. in keyset technique, adopt as claimed in claim 1 CMP substrate surface to be carried out to the method for planarization, it is characterized in that, the described grinding pad of step (3) microvoid polyurethane material density used is 0.13 ~ 1.6g/cm
3.
6. substrate surface is carried out to the method for planarization as claim 1 adopts CMP in keyset technique, it is characterized in that, in the described lapping liquid of step (3), contained viscosity stabilized material is glycerine.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410173271.7A CN103943491B (en) | 2014-04-28 | 2014-04-28 | The method that substrate surface is planarized by CMP is used in keyset technique |
| US14/689,067 US9589786B2 (en) | 2014-04-28 | 2015-04-17 | Method for polishing a polymer surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410173271.7A CN103943491B (en) | 2014-04-28 | 2014-04-28 | The method that substrate surface is planarized by CMP is used in keyset technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103943491A true CN103943491A (en) | 2014-07-23 |
| CN103943491B CN103943491B (en) | 2016-08-24 |
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| CN201410173271.7A Active CN103943491B (en) | 2014-04-28 | 2014-04-28 | The method that substrate surface is planarized by CMP is used in keyset technique |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157551A (en) * | 2014-07-31 | 2014-11-19 | 华进半导体封装先导技术研发中心有限公司 | Substrate surface pretreatment method prior to bonding |
| CN106672892A (en) * | 2016-12-21 | 2017-05-17 | 中国电子科技集团公司第五十五研究所 | Method for reducing depressed deformation of sacrificial layer in three-dimensional stacking in chemical mechanical polishing |
| CN109346419A (en) * | 2018-12-05 | 2019-02-15 | 德淮半导体有限公司 | Semiconductor devices and its manufacturing method |
| CN109585374A (en) * | 2017-09-28 | 2019-04-05 | 台湾积体电路制造股份有限公司 | The forming method of semiconductor device structure |
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| CN1253160A (en) * | 1998-11-09 | 2000-05-17 | 科莱恩(法国)公司 | New type abrasive composition used in integrated circuit electronic industry |
| US6383933B1 (en) * | 2000-03-23 | 2002-05-07 | National Semiconductor Corporation | Method of using organic material to enhance STI planarization or other planarization processes |
| CN1387249A (en) * | 2001-05-22 | 2002-12-25 | 华邦电子股份有限公司 | Grinding-flatening method for IC |
| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
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2014
- 2014-04-28 CN CN201410173271.7A patent/CN103943491B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1253160A (en) * | 1998-11-09 | 2000-05-17 | 科莱恩(法国)公司 | New type abrasive composition used in integrated circuit electronic industry |
| US6383933B1 (en) * | 2000-03-23 | 2002-05-07 | National Semiconductor Corporation | Method of using organic material to enhance STI planarization or other planarization processes |
| CN1387249A (en) * | 2001-05-22 | 2002-12-25 | 华邦电子股份有限公司 | Grinding-flatening method for IC |
| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157551A (en) * | 2014-07-31 | 2014-11-19 | 华进半导体封装先导技术研发中心有限公司 | Substrate surface pretreatment method prior to bonding |
| CN104157551B (en) * | 2014-07-31 | 2017-01-25 | 华进半导体封装先导技术研发中心有限公司 | Substrate surface pretreatment method prior to bonding |
| CN106672892A (en) * | 2016-12-21 | 2017-05-17 | 中国电子科技集团公司第五十五研究所 | Method for reducing depressed deformation of sacrificial layer in three-dimensional stacking in chemical mechanical polishing |
| CN109585374A (en) * | 2017-09-28 | 2019-04-05 | 台湾积体电路制造股份有限公司 | The forming method of semiconductor device structure |
| US12009222B2 (en) | 2017-09-28 | 2024-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming semiconductor device structure |
| CN109346419A (en) * | 2018-12-05 | 2019-02-15 | 德淮半导体有限公司 | Semiconductor devices and its manufacturing method |
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| Publication number | Publication date |
|---|---|
| CN103943491B (en) | 2016-08-24 |
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