CN111378386B - Application of cerium oxide abrasive in polishing of PI dielectric material - Google Patents
Application of cerium oxide abrasive in polishing of PI dielectric material Download PDFInfo
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- CN111378386B CN111378386B CN201811654753.9A CN201811654753A CN111378386B CN 111378386 B CN111378386 B CN 111378386B CN 201811654753 A CN201811654753 A CN 201811654753A CN 111378386 B CN111378386 B CN 111378386B
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- Prior art keywords
- polishing
- cerium oxide
- dielectric material
- oxide abrasive
- abrasive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The invention provides an application of a cerium oxide abrasive in polishing of a PI dielectric material, wherein the cerium oxide abrasive is mixed in a chemical mechanical polishing solution to form a composition for use, the content of the cerium oxide abrasive is 0.1% -1%, and the pH value of the chemical mechanical polishing solution is less than 7. The polishing solution disclosed by the invention uses cerium oxide as an abrasive, and shows a higher polishing rate of the PI dielectric material under the appropriate cerium oxide abrasive content and pH range of the polishing solution.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to application of a cerium oxide abrasive in polishing of a PI dielectric material.
Background
At present, SiO2Dielectric materials are materials commonly used in the semiconductor manufacturing industry, but such materials have a problem of a high dielectric constant (dielectric constant of about 4.0). The polymer material has a low dielectric constant, but most polymer materials have a glass transition temperature lower than 400 ℃, cannot withstand the process environment such as thermal cycling in semiconductor processing, and are not suitable for being used as dielectric materials for ULSI semiconductor devices.
However, Tai et al first reported the application of "CMP polishing to ULSI low dielectric constant PI materials" (see: 1999International Symposium on VLSI Technology, Systems, and applications, proceedings of Technical Papers (Cat. No.99TH8453), June 10,1999). Since Polyimide (PI) has excellent heat resistance and a simple synthesis process, it can simultaneously satisfy a plurality of performance requirements such as low dielectric constant, high mechanical strength, high glass transition temperature, etc., and is easy to form a film on the surface of a wafer, thus being widely applied to a Through Silicon Via (TSV) process as a dielectric material. Currently, the most commonly used PI dielectric material is PI-2610 (manufactured by Hitachi corporation) dielectric material manufactured by Hitachi corporation.
As PI is widely used in semiconductor production as a dielectric material, attention is also being paid to a polishing method for PI. In the current chemical mechanical polishing solution market, the polishing solution containing silicon oxide is an effective PI dielectric material CMP polishing solution product. However, the polishing solution has a low polishing rate on PI dielectric materials, and cannot meet the industrial requirements.
Disclosure of Invention
In order to solve the problems, the invention provides application of a cerium oxide abrasive in polishing of PI dielectric materials. The polishing solution disclosed by the invention uses cerium oxide as an abrasive, and is added into a chemical mechanical polishing solution, so that the polishing solution shows a higher polishing rate of a PI dielectric material under a proper pH range.
Specifically, the invention provides application of a cerium oxide abrasive in polishing of PI dielectric materials, wherein the cerium oxide abrasive is mixed with chemical mechanical polishing liquid for use, the content of the cerium oxide abrasive is 0.1% -1%, and the pH value of the chemical mechanical polishing liquid is less than 7.
Preferably, the cerium oxide abrasive is a polyhedral crystal type cerium oxide particle containing a cubic crystal plane (110) and a hexagonal crystal plane (111).
Preferably, the content of the cerium oxide abrasive is 0.5% -1.0%.
Preferably, the pH value of the chemical mechanical polishing solution is 2.3-5.0.
Preferably, the pH value of the chemical mechanical polishing solution is 3.6-5.0.
Preferably, the chemical mechanical polishing solution of the present invention may further comprise polishing solution components conventionally used in the art for polishing dielectric materials, such as corrosion inhibitors, complexing agents, chelating agents, organic solvents, and the like.
Preferably, the chemical mechanical polishing solution does not contain the picolinic acid and the Lewis acid.
In the present invention, the pH of the chemical mechanical polishing solution can be adjusted using a pH adjusting agent which is conventional in the art.
Compared with the prior art, the invention has the technical advantages that: the polishing rate of the PI dielectric material is greatly improved by using a specific type of cerium oxide abrasive and controlling the content and the pH value of the cerium oxide abrasive. The polishing rate of the chemical mechanical polishing solution to the PI dielectric material can reach several times or even dozens of times of the polishing rate of the existing silicon-based polishing solution; on the other hand, the chemical mechanical polishing solution used in the invention does not contain the picolinic acid and the Lewis acid, thereby improving the polishing rate of the PI dielectric material, saving the production cost and avoiding the adverse effect of the picolinic acid and the Lewis acid on the polishing.
Detailed Description
The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following examples.
Table 1 shows examples 1-10 and comparative examples 1-2 of compositions according to the invention. Wherein, the comparative example 1 is a polishing solution containing a silicon oxide abrasive material which is common in the market; comparative example 2 is a composition containing a picrolin acid and a Lewis acid (Al)3+) And a polishing solution of a cerium oxide abrasive. In the embodiment of the invention, cerium oxide-1 or cerium oxide-2 with different particle size ranges is used as an abrasive. In addition, the compositions of examples 1-10 of the present invention all had a pH of less than 7.
TABLE 1 comparative examples 1 to 2 and polishing solutions 1 to 10 according to the invention
The chemical mechanical polishing solutions of examples 1 to 10 and comparative examples 1 to 2 were used to polish PI-2610 dielectric materials manufactured by Hitachi corporation, and the polishing effects were compared to obtain the results shown in Table 2 below.
Wherein the polishing conditions are as follows: a Mirra polishing machine is selected for polishing, the polishing pad is an IC1010 polishing pad, the rotating speeds of a polishing disc and a polishing head are 93rpm and 87rpm respectively, the downward pressure is 4psi, the flow rate of polishing liquid is 150mL/min, and the polishing time is 60 seconds.
TABLE 2 polishing rates for comparative polishing solutions 1-2 and inventive polishing solutions 1-10 on PI-2610 dielectric materials
As can be seen from Table 2, the polishing solutions of the present invention can achieve higher polishing rates of polyimide dielectric materials than those of comparative examples 1 and 2. In comparison with the silicon oxide of 16.7% required in comparative example 1, it can be seen from examples 1 and 6 of the present invention that only the cerium oxide abrasive having a solid content of 0.1% was used to achieve a polishing rate of the polyimide dielectric material of about 3 times that of comparative example 1. As can be seen from examples 1-5 and examples 6-10, respectively, the polishing rate of the polishing solution for the polyimide dielectric material can be greatly improved by adjusting the content and pH value of the cerium oxide abrasive. According to examples 4 and 10 of the present invention, it can be seen that the polishing liquid using the cerium oxide abrasive of the present invention can polish polyimide dielectric materials at a rate as high as 18 or 17 times that of comparative example 1 using silicon oxide as abrasive grains. Compared with comparative example 2, it can be seen from examples 4 and 10 of the present invention that the polishing solution used in the present invention can increase the polishing rate of the polyimide dielectric material by about 2-3 times compared with comparative example 2 without the inclusion of the picrolic acid and the Lewis acid.
On the other hand, the polishing rate of the polishing solution of the embodiment of the invention on the polyimide dielectric material is influenced by the pH value. As can be seen from examples 1-3, the polishing rate of the polishing solution for the polyimide dielectric material is increased by about 3 times when the pH value is increased from 2.3 to 3.6 under the condition that the abrasive of the polishing solution is cerium oxide-1 and the content of the abrasive is the same; further increasing the pH to 5, the polishing rate changes less. The same is true. As can be seen from examples 6-8, in the case that the abrasive is cerium oxide-1 and the content is the same, the polishing rate of the polishing solution for the polyimide dielectric material is increased by about 3 times when the pH value is increased from 2.3 to 3.6; further increasing the pH to 5, the polishing rate changes less. It can be seen that the polishing rate of the polishing solution is optimal when the pH is 3.6 to 5, which is an optimum pH range.
Also, in the present invention, the content of cerium oxide has a significant influence on the polishing rate of the polyimide dielectric material. From examples 2, 4 and 5, it can be seen that when the content of cerium oxide-1 is increased from 0.1% to 0.5% under the condition of controlling the pH value to be 3.6, the polishing rate of the polishing solution on the polyimide dielectric material is increased by about 70%, and the polishing rate is slightly reduced by continuously increasing the content of cerium oxide-1 to 1.0%; from examples 7, 9 and 10, it can be seen that when the content of ceria-2 is increased from 0.1% to 0.5%, the polishing rate of the polishing solution for the polyimide dielectric material is increased by 50%, and the content of ceria-2 is continuously increased to 1.0%, and the polishing rate is continuously increased by 36%. It can be seen that the polishing rate of the polishing solution for the polyimide dielectric material is best when the contents of the cerium oxide-1 and the cerium oxide-2 are 0.5% and 1.0%, respectively, at a pH of 3.6. In addition, the polishing solution of the invention can obtain good polishing effect on polyimide dielectric materials by using cerium oxide-1 and cerium oxide-2 as abrasive materials.
The cerium oxide-1 used in the invention is polyhedral crystal-form particles containing a cubic crystal face (110) and a hexagonal crystal face (111), and the particle size is between 50 and 150 nm; the cerium oxide-2 has a particle size of 50-300 nm. It can be seen that the cerium oxide having the above particle shape and particle size range is more satisfactory for the abrasive required for polishing.
The "content" in the present application is a content of mass percent unless otherwise specified.
It should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration only, since the invention is not limited to the specific embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (1)
1. The application of the cerium oxide abrasive in polishing of the PI dielectric material is characterized in that the cerium oxide abrasive is mixed in a chemical mechanical polishing solution to form a composition, the content of the cerium oxide abrasive is 0.5% -1%, and the pH value of the chemical mechanical polishing solution is 3.6-5.0;
the cerium oxide abrasive is polyhedral crystal cerium oxide particles containing a cubic crystal face (110) and a hexagonal crystal face (111); the chemical mechanical polishing solution does not contain picolinic acid and Lewis acid.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811654753.9A CN111378386B (en) | 2018-12-28 | 2018-12-28 | Application of cerium oxide abrasive in polishing of PI dielectric material |
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| CN201811654753.9A CN111378386B (en) | 2018-12-28 | 2018-12-28 | Application of cerium oxide abrasive in polishing of PI dielectric material |
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| CN111378386A CN111378386A (en) | 2020-07-07 |
| CN111378386B true CN111378386B (en) | 2022-04-01 |
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| CN115960540A (en) * | 2022-12-23 | 2023-04-14 | 昂士特科技(深圳)有限公司 | Chemical mechanical polishing composition with improved particles |
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| JP2000080352A (en) * | 1998-06-11 | 2000-03-21 | Allied Signal Inc | Aqueous sol of metal oxide as slurry for polishing low dielectric material |
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| JP2009224695A (en) * | 2008-03-18 | 2009-10-01 | Fujifilm Corp | Polishing composition, and chemical mechanical polishing method using the same |
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| US10319601B2 (en) * | 2017-03-23 | 2019-06-11 | Applied Materials, Inc. | Slurry for polishing of integrated circuit packaging |
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| CN101044220A (en) * | 2004-10-27 | 2007-09-26 | 卡伯特微电子公司 | Metal ion-containing cmp composition and method for using the same |
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| CN101970347A (en) * | 2008-02-08 | 2011-02-09 | 尤米科尔公司 | Doped ceria abrasives with controlled morphology and preparation thereof |
| JP2009224695A (en) * | 2008-03-18 | 2009-10-01 | Fujifilm Corp | Polishing composition, and chemical mechanical polishing method using the same |
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