CN113004800B - Chemical mechanical polishing solution - Google Patents
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- CN113004800B CN113004800B CN201911327371.XA CN201911327371A CN113004800B CN 113004800 B CN113004800 B CN 113004800B CN 201911327371 A CN201911327371 A CN 201911327371A CN 113004800 B CN113004800 B CN 113004800B
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- 238000005498 polishing Methods 0.000 title claims abstract description 72
- 239000000126 substance Substances 0.000 title claims abstract description 26
- 230000007547 defect Effects 0.000 claims abstract description 37
- 239000002245 particle Substances 0.000 claims abstract description 18
- 239000007800 oxidant agent Substances 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- 239000003381 stabilizer Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 239000003112 inhibitor Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N malonic acid group Chemical group C(CC(=O)O)(=O)O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 15
- 229920002125 Sokalan® Polymers 0.000 claims description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical group OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 12
- 229960001631 carbomer Drugs 0.000 claims description 10
- SZQUEWJRBJDHSM-UHFFFAOYSA-N iron(3+);trinitrate;nonahydrate Chemical group O.O.O.O.O.O.O.O.O.[Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SZQUEWJRBJDHSM-UHFFFAOYSA-N 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 41
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 36
- 229910052721 tungsten Inorganic materials 0.000 abstract description 36
- 239000010937 tungsten Substances 0.000 abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 19
- 230000000052 comparative effect Effects 0.000 description 15
- 230000000875 corresponding effect Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 9
- 229940049638 carbomer homopolymer type c Drugs 0.000 description 8
- 229940043234 carbomer-940 Drugs 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- JVTIXNMXDLQEJE-UHFFFAOYSA-N 2-decanoyloxypropyl decanoate 2-octanoyloxypropyl octanoate Chemical compound C(CCCCCCC)(=O)OCC(C)OC(CCCCCCC)=O.C(=O)(CCCCCCCCC)OCC(C)OC(=O)CCCCCCCCC JVTIXNMXDLQEJE-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229940082484 carbomer-934 Drugs 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- -1 carbomer 940 Chemical compound 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a chemical mechanical polishing solution, comprising: abrasive particles, catalyst, stabilizer, cross-linked macromolecular surface defect inhibitor, oxidant, water and pH regulator. The chemical mechanical polishing solution realizes simultaneous polishing of tungsten, silicon oxide and silicon nitride, ensures high polishing speed of tungsten, has medium silicon oxide speed and low silicon nitride speed, greatly reduces surface defects of the polished silicon nitride surface, and realizes rapid planarization.
Description
Technical Field
The invention relates to a chemical mechanical polishing solution.
Background
Modern semiconductor technology is rapidly advancing toward miniaturization, and semiconductor integrated circuits include a silicon substrate and millions of elements thereon, with interconnect structures formed by multi-level interconnects. The layers and structures include a variety of materials such as monocrystalline silicon, silicon dioxide, tungsten, silicon nitride, and various other conductive, semiconductive, and dielectric materials. The thin layer structure of these materials may be fabricated by a variety of deposition techniques, such as Physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), and Plasma Enhanced Chemical Vapor Deposition (PECVD), after which the excess material needs to be removed. As layers of material are deposited and removed, the uppermost surface of the wafer becomes uneven. These non-uniformities may lead to various defects in the product, and thus the planarization techniques of the conductive layer and the insulating dielectric layer become particularly important. In the twentieth century, the Chemical Mechanical Polishing (CMP) technology originated by IBM corporation was considered the most effective method of global planarization at present.
Chemical Mechanical Polishing (CMP) consists of a combination of chemical action, mechanical action, and both actions. Typically, the wafer is mounted on a polishing head and its front surface is brought into contact with a polishing pad in a CMP apparatus. The polishing head moves linearly over the polishing pad or rotates in the same direction of motion as the polishing platen under pressure. At the same time, a polishing composition ("slurry") is injected at a flow rate between the wafer and the polishing pad, and the slurry spreads on the polishing pad by centrifugation. Thus, the wafer surface is polished and global planarization is achieved under both chemical and mechanical actions. CMP can be used to remove unwanted surface topography and surface defects such as rough surfaces, adsorbed impurities, lattice damage, scratches, etc.
Tungsten is used to form interconnects and contact plugs in semiconductor integrated circuit design fabrication. Chemical mechanical polishing is the preferred method of polishing tungsten. Since tungsten has a certain hardness, the polishing process is different from other metals. Meanwhile, in some chemical mechanical polishing practical applications, there is a case where tungsten, silicon oxide, and silicon nitride need to be polished simultaneously. This presents challenges for the design of the polishing composition due to the need to control the rate, dishing, surface imperfections of several different media. U.S. patent No. 9567491 discloses a polishing composition that can polish tungsten, silicon oxide, and silicon nitride simultaneously, describes a method for reducing tungsten dishing on patterned wafers, but does not address the surface defects of silicon nitride and has a tungsten removal rate that is slower than the silicon oxide removal rate. U.S. patent No. 9771496 discloses a polishing composition comprising a cyclopolysaccharide compound that can polish tungsten, silicon oxide, and silicon nitride simultaneously. This combination can greatly reduce the defects of silicon oxide but does not help reduce the surface defects of silicon nitride. Chinese patent CN 104284960 discloses a polishing composition for high selectivity polishing silicon oxide/silicon nitride, which can control defects of silicon nitride, but the combination cannot be used for tungsten polishing. Chinese patent CN 105229110 discloses a polishing composition that can control silicon nitride surface defects, but the combination cannot be used for polishing of tungsten. However, if the surface defects of the silicon nitride after polishing are not well controlled, the dielectric layer deposited thereon is not flat, which affects the wafer yield.
It is seen that it is of great interest in the art to find a polishing composition that polishes tungsten, silicon oxide, silicon nitride simultaneously, and reduces surface defects in silicon nitride.
Disclosure of Invention
In order to solve the technical problems that the existing tungsten chemical mechanical polishing solution cannot polish tungsten, silicon oxide and silicon nitride at the same time and respectively control the speed and the surface defects of tungsten, silicon oxide and silicon nitride, the invention provides the chemical mechanical polishing solution which has medium silicon oxide speed and low silicon nitride speed and can reduce the surface defects of silicon nitride while keeping high tungsten polishing speed, and the invention comprises the following components: abrasive particles, catalyst, stabilizer, cross-linked macromolecular surface defect inhibitor, oxidant, water and pH regulator.
Further, the cross-linked macromolecular surface defect inhibitor is a carbomer.
Further, the carbomers are one or more of model numbers 934 (i.e., carbomer 934), 940 (i.e., carbomer 940) and 941 (i.e., carbomer 941), with the difference between carbomers 934, carbomer 940 and carbomer 941 being in viscosity.
Further, the concentration of the carbomer model 940 is in the range of 0.005% to 0.1%.
Further, the concentration of the carbomer model 940 is in the range of 0.005% to 0.05%.
Further, the abrasive particles are SiO 2 。
Further, the concentration of the abrasive particles ranges from 0.5% to 3%.
Further, the concentration of the abrasive particles ranges from 1% to 3%.
Further, the catalyst is selected from ferric nitrate nonahydrate.
Further, the concentration range of the ferric nitrate nonahydrate is 0.01% -0.1%.
Further, the concentration range of the ferric nitrate nonahydrate is 0.01% -0.07%.
Further, the stabilizer is a carboxylic acid that can complex with iron.
Further, the carboxylic acid which can be complexed with iron is selected from one or more of phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid, and maleic acid.
Further, the carboxylic acid that can be complexed with iron is malonic acid.
Further, the concentration of the malonic acid ranges from 0.05% to 0.3%.
Further, the concentration of the malonic acid ranges from 0.1% to 0.27%.
Further, the oxidant is H 2 O 2 。
Further, the concentration of the oxidizing agent is in the range of 1 to 2%.
Further, the pH regulator is HNO 3 。
Further, the pH value is 2-4. When the pH is less than 2, the chemical mechanical polishing solution is a dangerous article, and the pH is more than 4, so that the defects of unstable grinding particles, precipitation of Fe and the like can be caused.
It should be understood that the% of the concentration described in the present invention refers to the mass concentration.
Compared with the prior art, the invention has the advantages that:
the chemical mechanical polishing solution realizes simultaneous polishing of tungsten, silicon oxide and silicon nitride, ensures high polishing speed of tungsten, has medium silicon oxide speed and low silicon nitride speed, and simultaneously greatly reduces surface defects of the polished silicon nitride surface, inhibits the surface defects of the silicon nitride surface and realizes rapid planarization.
Detailed Description
The advantages of the present invention will be described in detail below in conjunction with the specific embodiments.
The following is a detailed description of the chemical mechanical polishing composition of the invention for polishing tungsten by way of specific examples to provide a better understanding of the invention, but the following examples are not intended to limit the scope of the invention.
It should be understood that the percentages in the concentrations described in the present invention refer to mass percent.
Examples
The preparation method comprises the following steps: all the components are dissolved and mixed uniformly according to the formula of the table 1, the mass percentage is complemented to 100% by water, and the pH is adjusted to the expected value by a pH regulator.
TABLE 1 species of each component and corresponding concentrations of each example and comparative example
Effect example
The chemical mechanical polishing solutions of each of the examples and comparative examples in table 1 were used to polish tungsten, silicon oxide, silicon nitride wafers and measure surface defects of silicon nitride wafers according to the following experimental conditions, and the results of table 2 were obtained.
The polishing method comprises the following steps: the polishing machine table was a 12 inch polishing machine table (Reflexion LK) from applied materials, pressure 3.0psi, polishing platen and polishing head rotation speed 93/87rpm, polishing pad IC1010, polishing fluid flow rate 150ml/min, polishing time 1 minute.
Surface defect measurement method: the surface of the silicon nitride was measured using a non-patterned wafer defect inspection system (Surfscan SP 2) from KLA-Tencor corporation to count defects greater than 120nm in diameter.
TABLE 2 polishing rates for tungsten, silicon oxide, silicon nitride and inhibition effects on surface defects of silicon nitride for examples and comparative examples
Examples 1-7 demonstrate that the chemical mechanical polishing slurry of the present invention can simultaneously polish tungsten, silicon oxide, and silicon nitride with a polishing rate: tungsten > silicon oxide > silicon nitride, while maintaining a high polishing rate of tungsten, has both a medium silicon oxide rate and a low silicon nitride rate, and simultaneously has the ability to suppress surface defects of silicon nitride after polishing. Wherein the polishing rate of tungsten is positively correlated with the concentration of the oxidizing agent, or the concentration of the abrasive particles, or the concentration of the catalyst, or the concentration of the oxidizing agent. Specifically, the concentration of the oxidizing agent in examples 1-3 in table 2 was 1.00% and the corresponding tungsten polishing rates were 2356, 2318, 2325, respectively; when the concentration of the oxidizing agent was increased to 2.0% (as in examples 4-7), the corresponding tungsten polishing rates were 3107, 3611, 3552, 3409, respectively. Specifically, in Table 2, the concentrations of the abrasive particles of examples 1-3 were each 1.0%, corresponding to tungsten polishing rates of 2356, 2318, 2325, respectively; when the concentration of abrasive particles was increased to 2.0% (as in example 4), the corresponding tungsten polishing rate was 3107; when the concentration of abrasive particles was increased to 3.0% (e.g., examples 5-7), the corresponding tungsten polishing rates were 3611, 3552, 3409, respectively. Specifically, the concentration of the catalyst in examples 1-3 in Table 2 was 0.01% and the corresponding tungsten polishing rates were 2356, 2318, 2325, respectively; when the concentration of catalyst was increased to 0.05% (as in example 4), the corresponding tungsten polishing rate was 3107; when the catalyst concentration was increased to 0.07% (as in examples 5-7), the corresponding tungsten polishing rates were 3611, 3552, 3409, respectively. Thus, the polishing rate of tungsten can be adjusted by adjusting the amounts of the oxidizing agent, the abrasive particles, and the catalyst.
Comparison of comparative examples 1-2 and examples 1-7 shows that the addition of carbomers (e.g., carbomer 934, carbomer 940, carbomer 941) significantly improves the surface defects of the polished silicon nitride based on the same abrasive particles, catalyst, stabilizer, oxidizing agent, and pH. Specifically, it was found from examples 1 to 3 and comparative example 4 that the addition of carbomers (carbomer 934, carbomer 940, carbomer 941) significantly improved the surface defects of the polished silicon nitride from around 900 to around 300 on the basis of the same abrasive particles, catalyst, stabilizer, oxidizing agent and pH. The same conclusion can be drawn by example 4 and comparative example 2. The same conclusion can be reached by examples 5-7 and comparative examples 1 and 3. Furthermore, it can be seen from examples 5 to 7 that, on the basis of the same abrasive particles, catalyst, stabilizer, oxidizing agent and pH, as the amount of carbomer increases, the number of defects decreases correspondingly, at most only one-ninth without carbomer. At the same time, the amount of carbomer does not have a significant effect on the polishing rate. Specifically, when the concentration of carbomer 940 was 0.015% (example 5), the corresponding silicon nitride surface defect was 162; when the concentration of carbomer 940 is 0.050% (example 5), the corresponding silicon nitride surface defect is 147; when the concentration of carbomer 940 was 0.100% (example 5), the corresponding silicon nitride surface defect was 101 (about one-ninth of silicon nitride surface defect 976 in comparative example 1).
Comparison of comparative example 3 and example 5 shows that the chemical mechanical polishing solution obtained by adding carbomer monomer acrylic acid has no correction ability for defects after silicon nitride polishing. Specifically, in the case where the concentration of carbomer 940 in example 5 was identical to the concentration of acrylic acid in comparative example 3 on the basis of the abrasive grains, the catalyst, the stabilizer, the oxidizing agent, and the pH were identical, the chemical mechanical polishing liquid of example 5 had the ability to suppress the surface defects of silicon nitride, which was reduced from 976 of comparative example 1 to 162 relative to comparative example 1; the composition of comparative example 3 does not have the ability to inhibit the surface defects of silicon nitride because the surface defects of comparative example 3 are similar to those of comparative example 1.
The above description of the specific embodiments of the present invention has been given by way of example only, and the present invention is not limited to the above described specific embodiments. Any equivalent modifications and substitutions for the present invention will occur to those skilled in the art, and are also within the scope of the present invention. Accordingly, equivalent changes and modifications are intended to be included within the scope of the present invention without departing from the spirit and scope thereof.
Claims (6)
1. The chemical mechanical polishing solution consists of abrasive particles, a catalyst, a stabilizer, a cross-linked macromolecular surface defect inhibitor, an oxidant, water and a pH regulator, wherein the cross-linked macromolecular surface defect inhibitor is carbomer with the model number of 940, and the concentration range of the carbomer with the model number of 940 is 0.005-0.1%;
the grinding particles are SiO 2 The concentration range of the grinding particles is 0.5% -3%;
the catalyst is selected from ferric nitrate nonahydrate, and the concentration range of the ferric nitrate nonahydrate is 0.01% -0.1%;
the stabilizer is malonic acid, and the concentration range of the malonic acid is 0.05% -0.3%;
the oxidant is H 2 O 2 The concentration range of the oxidant is 1-2%;
the pH value is 2-4.
2. The chemical mechanical polishing solution according to claim 1, wherein the carbomer model 940 has a concentration ranging from 0.005% to 0.05%.
3. The chemical mechanical polishing liquid according to claim 1, wherein the concentration of the abrasive particles is in the range of 1% to 3%.
4. The chemical mechanical polishing solution according to claim 1, wherein the concentration of the ferric nitrate nonahydrate is in the range of 0.01% to 0.07%.
5. The chemical mechanical polishing solution according to claim 1, wherein the concentration of malonic acid is in the range of 0.1% to 0.27%.
6. The chemical mechanical polishing liquid according to claim 1, wherein the pH adjustor is HNO 3 。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911327371.XA CN113004800B (en) | 2019-12-20 | 2019-12-20 | Chemical mechanical polishing solution |
| PCT/CN2020/133604 WO2021121045A1 (en) | 2019-12-20 | 2020-12-03 | Chemical-mechanical polishing solution |
| TW109143683A TW202124621A (en) | 2019-12-20 | 2020-12-10 | Chemical mechanical polishing slurry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911327371.XA CN113004800B (en) | 2019-12-20 | 2019-12-20 | Chemical mechanical polishing solution |
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| Publication Number | Publication Date |
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| CN113004800A CN113004800A (en) | 2021-06-22 |
| CN113004800B true CN113004800B (en) | 2024-04-12 |
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| CN201911327371.XA Active CN113004800B (en) | 2019-12-20 | 2019-12-20 | Chemical mechanical polishing solution |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN113004800B (en) |
| TW (1) | TW202124621A (en) |
| WO (1) | WO2021121045A1 (en) |
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| KR100645957B1 (en) * | 2004-10-26 | 2006-11-14 | 삼성코닝 주식회사 | Aqueous slurry composition for chemical mechanical planarization |
| TW200916564A (en) * | 2007-01-31 | 2009-04-16 | Advanced Tech Materials | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| KR20100091436A (en) * | 2009-02-10 | 2010-08-19 | 삼성전자주식회사 | Composition of solution for chemical mechanical polishing |
-
2019
- 2019-12-20 CN CN201911327371.XA patent/CN113004800B/en active Active
-
2020
- 2020-12-03 WO PCT/CN2020/133604 patent/WO2021121045A1/en active Application Filing
- 2020-12-10 TW TW109143683A patent/TW202124621A/en unknown
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| CN1966594A (en) * | 1997-07-28 | 2007-05-23 | 卡伯特微电子公司 | Polishing composition for metal cmp |
| US6039633A (en) * | 1998-10-01 | 2000-03-21 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
| CN1787895A (en) * | 2003-05-12 | 2006-06-14 | 高级技术材料公司 | Improved chemical mechanical polishing compositions for copper and associated materials and method of using same |
| CN1787966A (en) * | 2003-07-28 | 2006-06-14 | Ppg工业俄亥俄公司 | Silica and silica-based slurry |
| CN101356628A (en) * | 2005-08-05 | 2009-01-28 | 高级技术材料公司 | High throughput chemical mechanical polishing composition for metal film planarization |
| CN101747843A (en) * | 2008-12-19 | 2010-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN102051126A (en) * | 2009-11-06 | 2011-05-11 | 安集微电子（上海）有限公司 | Polishing solution for tungsten chemical mechanical polishing |
| CN106661430A (en) * | 2014-06-25 | 2017-05-10 | 嘉柏微电子材料股份公司 | Tungsten chemical-mechanical polishing composition |
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| CN113004800A (en) | 2021-06-22 |
| TW202124621A (en) | 2021-07-01 |
| WO2021121045A1 (en) | 2021-06-24 |
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