CN118256156A - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
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- CN118256156A CN118256156A CN202211698530.9A CN202211698530A CN118256156A CN 118256156 A CN118256156 A CN 118256156A CN 202211698530 A CN202211698530 A CN 202211698530A CN 118256156 A CN118256156 A CN 118256156A
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- chemical mechanical
- mechanical polishing
- polishing liquid
- liquid according
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- 238000005498 polishing Methods 0.000 title claims abstract description 66
- 239000000126 substance Substances 0.000 title claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 24
- 125000000524 functional group Chemical group 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- 239000003381 stabilizer Substances 0.000 claims abstract description 10
- 239000007800 oxidant agent Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 17
- 150000002430 hydrocarbons Chemical class 0.000 claims description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims description 10
- 229930195733 hydrocarbon Natural products 0.000 claims description 10
- -1 heterocyclic hydrocarbon Chemical class 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- 125000002947 alkylene group Chemical group 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- 239000003112 inhibitor Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- SZQUEWJRBJDHSM-UHFFFAOYSA-N iron(3+);trinitrate;nonahydrate Chemical group O.O.O.O.O.O.O.O.O.[Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SZQUEWJRBJDHSM-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 230000000536 complexating effect Effects 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 28
- 239000010937 tungsten Substances 0.000 abstract description 28
- 229910052721 tungsten Inorganic materials 0.000 abstract description 27
- 239000000463 material Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000000377 silicon dioxide Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000009471 action Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Natural products NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000003630 glycyl group Chemical group [H]N([H])C([H])([H])C(*)=O 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten dioxide Inorganic materials O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing solution, which comprises water, oxide grinding particles, a catalyst, a stabilizer, an oxidant and a pH regulator, wherein the surfaces of the oxide grinding particles are modified by organic functional groups. According to the chemical mechanical polishing solution, the functional groups are modified on the surface of the grinding particles, so that the defect of the polished wafer surface can be effectively reduced on the premise that the polishing rate of the polishing solution on materials such as tungsten and the like is not influenced, and the appearance of the polished wafer surface is effectively improved.
Description
Technical Field
The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing solution.
Background
Modern semiconductor technology enables highly miniaturized devices. Hundreds of millions of devices may be integrated on an integrated circuit silicon substrate. These elements form an interconnect structure through wires and multilayer interconnects. Physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), plasma Enhanced Chemical Vapor Deposition (PECVD), electrochemical plating (ECP), and the like are employed for the preparation of thin layers of these materials. As layers of material are deposited and removed, the uppermost surface of the wafer becomes uneven. These non-uniformities may lead to various defects in the product, and therefore the planarization techniques of the conductive layer and the insulating dielectric layer become critical. In the twentieth century, the Chemical Mechanical Polishing (CMP) technology originated by IBM corporation was considered the most effective method of global planarization at present. Chemical mechanical polishing consists of a combination of chemical action, mechanical action, and both actions. Typically, the wafer is mounted on a polishing head and its front surface is brought into contact with a polishing pad in a CMP apparatus. The polishing head moves linearly over the polishing pad or rotates in the same direction of motion as the polishing platen under pressure. At the same time, a polishing composition ("slurry") is injected at a flow rate between the wafer and the polishing pad, and the slurry spreads on the polishing pad by centrifugation. Thus, the wafer surface is polished and global planarization is achieved under both chemical and mechanical actions. CMP can be used to remove unwanted surface topography and surface defects such as rough surfaces, adsorbed impurities, lattice damage, scratches, etc.
CMP techniques have become the method of choice for achieving tungsten interconnects in semiconductor fabrication processes. Tungsten is often used in integrated circuit design for contact/via. Tungsten is a hard metal and is chemically inert, which presents challenges for tungsten CMP. Many CMP slurries used to polish tungsten cause erosion and dishing problems due to their corrosiveness. In severe cases, cavities in the dielectric layer are caused, which affect the electrical properties. Accordingly, there is a need for a CMP polishing method and composition for tungsten that inhibits corrosion of tungsten wafers, as well as erosion of tungsten pits and wire arrays.
Development of a novel tungsten polishing liquid that minimizes dishing and maximizes planarization efficiency is one of the approaches to solve the above-described problems. As disclosed in U.S. patent No. 6,372,648 Bl, surface modification of oxide abrasives to adjust the selectivity between removal of different materials helps to produce excellent surface topography (e.g., reduced erosion, dishing, and protrusions) after polishing and stabilizes the abrasive particles in the slurry. Today, integrated circuit fabrication is becoming more complex and higher demands are being placed on the polishing liquid. The existing compounds that help maintain surface morphology are difficult to adapt to the wide variety of tungsten polishing requirements while protecting complex and diverse types of surface erosion and dishing. Therefore, for tungsten polishing solutions, it is important to develop abrasives with minimized dishing, flattest surface topography.
Disclosure of Invention
The invention aims to provide a chemical mechanical polishing solution which can effectively reduce corrosion defects on the surface of Co when guaranteeing the polishing rate of cobalt.
Specifically, the invention provides a chemical mechanical polishing solution, which comprises water, oxide grinding particles, a catalyst, a stabilizer, an oxidant and a pH regulator, wherein the surfaces of the oxide grinding particles are modified by organic functional groups.
Preferably, the organic functional group comprises a linear hydrocarbon, a branched hydrocarbon, an alkylene oxide hydrocarbon, or a heterocyclic hydrocarbon.
Preferably, the oxide abrasive particles modified with organic functional groups are of formula (I), wherein R is of formula (II),
Or alternatively
The oxide abrasive particles modified by organic functional groups are shown in a formula (III), wherein R' is alkyl alkene containing branched chains,
The alkylene oxide hydrocarbon comprises a compound of formula (IV),
The oxide abrasive particles modified by organic functional groups are represented by formula (IV), wherein R' is represented by formula (V),
Wherein n is any integer selected from 1-6.
Preferably, the mass percentage concentration of the oxide grinding particles is 0.5% -3.5%.
Preferably, the catalyst is a metal cation catalyst.
Preferably, the catalyst is ferric nitrate nonahydrate.
Preferably, the mass percentage concentration of the catalyst is 0.01% -0.1%.
Preferably, the mass percentage concentration of the catalyst is 0.01% -0.03%.
Preferably, the stabilizer is a carboxylic acid compound that can complex with iron ions.
Preferably, the stabilizer is selected from one or more of phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid and maleic acid.
Preferably, the mass percentage concentration of the stabilizer is 0.01% -0.09%.
Preferably, the oxidant is hydrogen peroxide, and the mass percentage concentration is 0.5% -5%.
Preferably, the pH value of the chemical mechanical polishing solution is 2-5.
According to the chemical mechanical polishing solution, the functional groups are modified on the surface of the grinding particles, so that the defect of the polished wafer surface can be effectively reduced on the premise that the polishing rate of the polishing solution on materials such as tungsten and the like is not influenced, and the appearance of the polished wafer surface is effectively improved.
Detailed Description
Advantages of the invention are further illustrated below in connection with specific embodiments.
Examples and comparative examples all components were dissolved and mixed uniformly according to the formulation given in table 1, with water to make up to 100% by mass. The pH is adjusted to the desired value with a pH adjustor. Wherein, the grinding particles use silicon dioxide, the mass percentage concentration is 3.0%, the oxidant uses hydrogen peroxide, the mass percentage is 2%, the corrosion inhibitor is glycine, and the mass percentage is 0.05%. The pH adjuster used was nitric acid.
TABLE 1 Components and contents of examples 1 to 12 and comparative examples 1 to 3
In order to further express the polishing effect of the chemical mechanical polishing liquid in the present invention, a polishing test was performed.
Specific polishing objects:
Silicon dioxide material (12 "PETEOS 30 k); tungsten material (12 "W6 k); patterned test piece (Silyb BEOLPatterned W/Oxide PATTERNED WAFER).
Specific polishing conditions:
The pressure was 4.8 psi, the polishing disk and head rotational speed was 90/91rpm, the polishing pad JFKC, the polishing liquid flow rate was 100ml/min, and the polishing table was 12 "Ebara".
The specific test results are shown in table 2. Wherein Dishing (dishing) and erosion were measured at 0.15um/0.15um tungsten and silicon dioxide pitch line areas. Dishing taking the height difference from the silicon dioxide outside the line region to the silicon dioxide inside the line region; erosion the height difference from silicon dioxide in the line region to tungsten in the line region.
TABLE 2 polishing test results for examples 1-15 and comparative examples 1-4
Examples 1-12 demonstrate that the chemical mechanical polishing solutions of the present invention can polish tungsten at high rates while also having a moderate polishing rate for silicon oxide. Importantly, the morphology difference of the polished tungsten surface is obviously reduced after the surface modification of the oxide abrasive. For the preferred hydrocarbon functions (see examples 3, 11-12), it was found that as the proportion of surface modified functions increased, the topography differences of the tungsten surface after polishing also improved. Comparison of comparative example 1 and example 12 shows that the difference in surface morphology after polishing can be reduced by 40% at a concentration of 0.6% for the hexyl-functional modified silica particles. Wherein the dishing can be reduced by 45% and erosion% can be reduced by 35%. It should be noted that modification of silica particles by hexyl functionality reduces the polishing rate of silica (see examples 3, 11, 12), but the effect of the modified abrasive particles on the polishing rate of silica does not vary with the concentration of the hexyl modification. At the same time, the modification of the silica particles by the hexyl functionality has substantially no effect on the polishing rate of tungsten.
Comparison of comparative example 1 and examples 1-3 shows that after three different organic functional groups are modified on silica abrasive particles based on the same catalyst, stabilizer, oxidizer and pH, the uneven results of dishing and convexity of tungsten surface after polishing (relative to comparative example 1Surface unevenness of tungsten, after modification of silicon oxide particles, is reduced to)。
Comparison of comparative example 1 and examples 3-6 shows that the hydrocarbon chain length of the modified functional group and the modified silica particles have a decisive influence on the morphology difference of the polished tungsten surface. The structural area of the larger modified functional group can effectively reduce the unevenness of the tungsten surface after polishing.
The comparison of comparative examples 1-3 and examples 3-6 shows that the uncharged functional group modified silica particles do not significantly alter the removal rate of tungsten or silica by the abrasive and have some improvement in surface irregularities caused during the removal process.
In the invention, the organic hydrocarbon compound on the surface of the grinding particle replaces the hydroxyl group on the surface of the oxide grinding particle, and the inert soft organic hydrocarbon compound reduces the chemical acting force such as hydrogen bond between the grinding material and tungsten, and reduces the concave and convex of the tungsten surface after polishing caused by the chemical force. Meanwhile, the functional group has small molecular weight compared with the oxide particles, so that the effect on the polishing rate of tungsten is not obvious at a certain concentration.
The above description of the specific embodiments of the present invention has been given by way of example only, and the present invention is not limited to the above described specific embodiments. Any equivalent modifications and substitutions for the present invention will occur to those skilled in the art, and are also within the scope of the present invention. Accordingly, equivalent changes and modifications are intended to be included within the scope of the present invention without departing from the spirit and scope thereof.
Claims (13)
1. A chemical mechanical polishing liquid is characterized by comprising
Water, oxide abrasive particles, a catalyst, a stabilizer, an oxidant, a corrosion inhibitor, and a pH adjuster, wherein the oxide abrasive particles surface is modified with an organofunctional group.
2. The chemical mechanical polishing liquid according to claim 1, wherein,
The organic functional group includes a linear hydrocarbon, a branched hydrocarbon, an alkylene oxide hydrocarbon, or a heterocyclic hydrocarbon.
3. The chemical mechanical polishing liquid according to claim 2, wherein,
The oxide abrasive particles modified by organic functional groups are shown in a formula (I), wherein R is shown in a formula (II),
Or alternatively
The oxide abrasive particles modified by organic functional groups are shown in a formula (III), wherein R' is alkyl alkene containing branched chains,
The alkylene oxide hydrocarbon comprises a compound of formula (IV),
The oxide abrasive particles modified by organic functional groups are represented by formula (IV), wherein R' is represented by formula (V),
Wherein n is any integer selected from 1-6.
4. The chemical mechanical polishing liquid according to claim 1, wherein,
The mass percentage concentration of the oxide grinding particles is 0.5% -3.5%.
5. The chemical mechanical polishing liquid according to claim 1, wherein,
The catalyst is a metal cation catalyst.
6. The chemical mechanical polishing liquid according to claim 5,
The catalyst is ferric nitrate nonahydrate.
7. The chemical mechanical polishing liquid according to claim 1, wherein,
The mass percentage concentration of the catalyst is 0.01% -0.1%.
8. The chemical mechanical polishing liquid according to claim 7,
The mass percentage concentration of the catalyst is 0.01% -0.03%.
9. The chemical mechanical polishing liquid according to claim 1, wherein,
The stabilizer is a carboxylic acid compound capable of complexing with iron ions.
10. The chemical mechanical polishing liquid according to claim 9, wherein,
The stabilizer is one or more selected from phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid and maleic acid.
11. The chemical mechanical polishing liquid according to claim 1, wherein,
The mass percentage concentration of the stabilizer is 0.01% -0.09%.
12. The chemical mechanical polishing liquid according to claim 1, wherein,
The oxidant is hydrogen peroxide, and the mass percentage concentration is 0.5% -5%.
13. The chemical mechanical polishing liquid according to claim 1, wherein,
The pH value of the chemical mechanical polishing solution is 2-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211698530.9A CN118256156A (en) | 2022-12-28 | 2022-12-28 | Chemical mechanical polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211698530.9A CN118256156A (en) | 2022-12-28 | 2022-12-28 | Chemical mechanical polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118256156A true CN118256156A (en) | 2024-06-28 |
Family
ID=91601340
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211698530.9A Pending CN118256156A (en) | 2022-12-28 | 2022-12-28 | Chemical mechanical polishing solution |
Country Status (1)
| Country | Link |
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| CN (1) | CN118256156A (en) |
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- 2022-12-28 CN CN202211698530.9A patent/CN118256156A/en active Pending
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