CN114686109A - Chemical mechanical polishing solution for tungsten polishing - Google Patents
Chemical mechanical polishing solution for tungsten polishing Download PDFInfo
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- CN114686109A CN114686109A CN202011619699.1A CN202011619699A CN114686109A CN 114686109 A CN114686109 A CN 114686109A CN 202011619699 A CN202011619699 A CN 202011619699A CN 114686109 A CN114686109 A CN 114686109A
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- chemical mechanical
- mechanical polishing
- polishing solution
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- polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 76
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 39
- 239000010937 tungsten Substances 0.000 title claims abstract description 39
- 239000000126 substance Substances 0.000 title claims abstract description 33
- 230000007797 corrosion Effects 0.000 claims abstract description 50
- 238000005260 corrosion Methods 0.000 claims abstract description 50
- 239000003112 inhibitor Substances 0.000 claims abstract description 23
- 239000003381 stabilizer Substances 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 10
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 7
- WHTVZRBIWZFKQO-AWEZNQCLSA-N (S)-chloroquine Chemical compound ClC1=CC=C2C(N[C@@H](C)CCCN(CC)CC)=CC=NC2=C1 WHTVZRBIWZFKQO-AWEZNQCLSA-N 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229960003677 chloroquine Drugs 0.000 claims abstract description 6
- WHTVZRBIWZFKQO-UHFFFAOYSA-N chloroquine Natural products ClC1=CC=C2C(NC(C)CCCN(CC)CC)=CC=NC2=C1 WHTVZRBIWZFKQO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229960002328 chloroquine phosphate Drugs 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- AEUAEICGCMSYCQ-UHFFFAOYSA-N 4-n-(7-chloroquinolin-1-ium-4-yl)-1-n,1-n-diethylpentane-1,4-diamine;dihydrogen phosphate Chemical group OP(O)(O)=O.ClC1=CC=C2C(NC(C)CCCN(CC)CC)=CC=NC2=C1 AEUAEICGCMSYCQ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 12
- -1 iron ions Chemical class 0.000 claims description 11
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical group 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- SZQUEWJRBJDHSM-UHFFFAOYSA-N iron(3+);trinitrate;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SZQUEWJRBJDHSM-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000003068 static effect Effects 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 9
- 230000002401 inhibitory effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229920001308 poly(aminoacid) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/04—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in markedly acid liquids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Abstract
The invention aims to provide a chemical mechanical polishing solution for tungsten polishing, which comprises the following components: chloroquine corrosion inhibitor, water, grinding particles, catalyst, stabilizer, oxidant and pH regulator. The chemical mechanical polishing solution provided by the invention can provide a higher tungsten polishing speed and a medium silicon oxide polishing speed. Most importantly, the composition exhibits low static corrosion of tungsten, which in turn improves the condition of the metal surface after polishing.
Description
Technical Field
The invention relates to the field of chemical reagents for semiconductor manufacturing, in particular to a chemical mechanical polishing solution for tungsten polishing.
Background
Nowadays, rapid development of semiconductor technology has enabled high miniaturization of devices. Hundreds of millions of functional elements are often supported on an integrated circuit substrate. These elements form an interconnect structure through the conductive layer and the multilayer interconnection. Planarization techniques for the conductive and dielectric layers become critical. In the 80's of the twentieth century, Chemical Mechanical Polishing (CMP) technology pioneered by IBM corporation was considered the most effective method of global planarization at present. Chemical mechanical polishing consists of chemical action, mechanical action and a combination of the two actions. Typically, the wafer is held on a polishing head and its front surface is brought into contact with a polishing pad in a CMP apparatus. Under certain pressure, the grinding head moves linearly on the polishing pad or rotates along the same motion direction as the grinding table. At the same time, a polishing composition ("slurry") is injected between the wafer and the polishing pad at a flow rate that is centrifugally spread across the polishing pad. Thus, the wafer surface is polished and globally planarized under the dual action of chemical and mechanical action. CMP can be used to remove unwanted surface topography and surface defects such as rough surfaces, adsorbed impurities, lattice damage, scratches, and the like.
In recent years, semiconductor manufacturing has increasingly used metallic tungsten to make metal via plugs and contacts while using bonding layers, such as TiN and Ti, to connect them to SiO 2. It is generally desirable to process the tungsten deposition layer using a CMP process to obtain a flat, defect-free surface. Unfortunately, however, the oxidizing agent in the tungsten polishing solution can cause corrosion of the metal, which in most cases is undesirable. It may cause surface defects such as pitting and perforation. Severe metal corrosion can form very deep tungsten vias and ultimately affect the performance characteristics of the semiconductor device.
In recent years, the development of inhibitors of tungsten corrosion has been the focus of developing polishing compositions. Early solutions, such as US 6136711, used amino acids as tungsten polishing corrosion inhibitors. Amino acid corrosion inhibitors have a modest inhibitory effect in many systems and are used in large amounts, often severely inhibiting polishing rates, and have been difficult to accommodate a wide variety of tungsten polishing requirements. In recent years, small molecule organic compounds containing multiple heteroatoms and polymers can often serve as corrosion inhibitors of tungsten, for example, U.S. Pat. No. US10286518B2 finds that thiol alkoxy compounds can inhibit tungsten corrosion and reduce corrosion, butterfly defects and other problems during polishing, but the thiol alkoxy compounds have limited inhibition capability and cannot well solve serious corrosion problems. Also, as disclosed in chinese patent CN 111094481a, polyamino acids are used as tungsten corrosion inhibitors, which are effective in inhibiting tungsten corrosion, but affect polishing rate. As can be seen from the above facts, it is urgent and necessary to develop a tungsten corrosion inhibitor that inhibits corrosion with high efficiency without having a significant influence on the polishing rate.
Disclosure of Invention
In order to overcome the technical defects, the invention aims to provide a chemical mechanical polishing solution for tungsten polishing, which can provide a higher tungsten polishing speed and a medium silicon oxide polishing speed. Most importantly, the composition exhibits low static corrosion of tungsten, which in turn improves the condition of the metal surface after polishing.
The invention discloses a chemical mechanical polishing solution, which comprises: chloroquine corrosion inhibitor, water and SiO2Abrasive particles, a catalyst comprising iron ions, a stabilizer, an oxidizing agent, and a pH adjuster.
Further, the structure of the chloroquine corrosion inhibitor is shown as the formula I:
further, the corrosion inhibitor is selected from chloroquine phosphate, and the structure of the chloroquine phosphate is shown as the formula II:
further, the mass percentage content range of the chloroquine phosphate corrosion inhibitor is 0.005% -0.05%.
Further, the content of the grinding particles is 0.5-3% by mass.
Further, the content of the grinding particles is 1-3% by mass.
Further, the catalyst containing iron ions is ferric nitrate nonahydrate.
Further, the content of the iron ion-containing catalyst is in a range of 0.01-0.1% by mass.
Further, the mass percentage content of the iron ion-containing catalyst ranges from 0.01% to 0.03%.
Further, the stabilizer is an organic stabilizer.
Further, the organic stabilizer is a carboxylic acid that can complex with iron.
Further, the carboxylic acid capable of being complexed with iron is one or more of phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid and maleic acid.
Further, the stabilizer is malonic acid.
Further, the mass percentage content range of the stabilizer is 0.01-0.09%.
Further, the content of the stabilizer is 0.01-0.06% by mass.
Further, the oxidant is H2O2。
Further, the mass percentage content of the oxidant is 2-4%.
Further, the pH regulator is HNO3。
Further, the pH value of the chemical mechanical polishing solution is 2-4.
Compared with the prior art, the invention has the advantages that:
the invention provides a chemical mechanical polishing composition which can remarkably reduce the static corrosion rate of tungsten while ensuring good polishing rate of the tungsten. In the present technology, the mechanism of corrosion inhibition can be explained as: the corrosion inhibitor has three nitrogen atoms, is respectively positioned on a quinoline ring and an aliphatic chain, and can produce a plurality of R at the pH of 2-44And the N + (R is a carbon atom or hydrogen) structures form a riveting group, and the riveting group and the tungsten metal surface with negative charges are adsorbed to further protect the metal surface. Meanwhile, the corrosion inhibitor is a small molecular compound, so thatThe polishing speed of tungsten is not greatly influenced under a certain concentration.
Detailed Description
The advantages of the invention are further illustrated below with reference to specific examples.
According to the formulation given in table 1, all the components were dissolved and mixed uniformly, the mass percentage was made up to 100% with water, and the pH was adjusted to the desired value with a pH adjuster. Polishing liquids of examples 1 to 9 and comparative examples 1 to 4 were obtained. All of the reagents of the invention are commercially available.
TABLE 1 formulations of examples 1-14 and comparative examples 1-8
The polishing solutions prepared by mixing the formulations in table 1 were subjected to a polishing rate test experiment and a static corrosion test of tungsten according to the following experimental conditions, and the obtained experimental results are shown in table 2.
The specific polishing conditions are as follows: pressure 2.0psi, rotation speed of the polishing disk and the polishing head 93/87rpm, polishing pad IC1010, flow rate of the polishing solution 150ml/min, polishing bench 12' Reflexion LK, and polishing time 1 min.
Static corrosion testing of tungsten: a tungsten wafer of about 3cm x 3cm was immersed in the preheated 45 c polishing slurry for 2min, taken out of the rinse and tested for static etch data using a four point probe method.
TABLE 2 polishing Rate and static Corrosion test results for examples 1-10 and comparative examples 1-8
As can be seen from the combination of tables 1 and 2, the CMP slurries of examples 1 to 10 can polish tungsten at a high rate while having a moderate polishing rate for silicon oxide. Importantly, the polishing composition can exhibit a very low static corrosion rate for metals in the presence of the corrosion inhibitor chloroquine phosphate. Also, as can be seen from the experimental results of examples 1 to 10, particularly when the preferred chloroquine phosphate is used as a corrosion inhibitor, it was found that the corrosion-inhibiting effect of the polishing liquid on tungsten is gradually improved as the amount of the corrosion inhibitor is increased. Preferably, the static corrosion can be reduced to 3A/min and below, even 0, in the presence of 0.05% and above of chloroquine phosphate. However, it is also noted that when the amount of chloroquine phosphate exceeds a certain limit, although the static etch rate of tungsten can be further reduced, a large pressing effect is produced on the tungsten polishing rate (examples 4 to 6), but there is no influence on the polishing rate of silicon oxide.
By comparing comparative example 1 with examples 1 to 4, it was found that the static corrosion of tungsten can be effectively inhibited by adding the chloroquine phosphate corrosion inhibitor on the basis of the same components and contents of the abrasive grains, catalyst, stabilizer, oxidizing agent and pH (the static corrosion rate of tungsten is 133A/min compared with comparative example 1, and the static corrosion of tungsten is reduced to the point where the chloroquine phosphate corrosion inhibitor is added
Hereinafter, the static corrosion rate of tungsten can be reduced even to nearly 0) by adjusting the amount of chloroquine phosphate corrosion inhibitor used.
By comparing comparative examples 3 to 4 with examples 2 and 4, it was found that a fragment compound of chloroquine phosphate, such as quinoline, does not exert a corrosion-inhibiting effect.
It was found by comparing comparative examples 5 to 6 with examples 2 and 4 that a compound having a tertiary amine structure similar to the aliphatic chain terminal of chloroquine phosphate, such as triethylamine, did not exert an effect of suppressing corrosion.
By comparing comparative examples 7 to 8 with examples 2 and 4, it was found that a compound having a structure similar to that of chloroquine phosphate aliphatic chain diamine, such as 1, 6-hexanediamine, does not inhibit corrosion but rather aggravates corrosion of tungsten.
In comparison of comparative examples 1 to 4 and example 2, it was found that the corrosion-inhibiting effect of chloroquine phosphate is due to the synergistic effect of the multiple functional groups therein, and that neither compounds containing either only a part thereof or functional groups similar thereto can achieve the corrosion-inhibiting effect on tungsten materials.
It should be noted that the embodiments of the present invention have been described in terms of preferred embodiments, and not by way of limitation, and that those skilled in the art can make modifications and variations of the embodiments described above without departing from the spirit of the invention.
Claims (19)
1. A chemical mechanical polishing slurry for tungsten polishing, comprising:
chloroquine corrosion inhibitor, water and SiO2Abrasive particles, a catalyst comprising iron ions, a stabilizer, an oxidizing agent, and a pH adjuster.
2. The chemical mechanical polishing solution according to claim 1,
the structure of the chloroquine corrosion inhibitor is shown as a formula I:
3. the chemical mechanical polishing solution according to claim 1,
the corrosion inhibitor is selected from chloroquine phosphate, and the structure of the chloroquine phosphate is shown as the formula II:
4. the chemical mechanical polishing solution according to claim 1,
the mass percentage content range of the chloroquine corrosion inhibitor is 0.005-0.07%.
5. The chemical mechanical polishing solution according to claim 1,
the content range of the grinding particles is 0.5-3% by mass.
6. The chemical mechanical polishing solution according to claim 5,
the content range of the grinding particles is 1-3% by mass.
7. The chemical mechanical polishing solution according to claim 1,
the catalyst containing iron ions is ferric nitrate nonahydrate.
8. The chemical mechanical polishing solution according to claim 7,
the mass percentage content range of the catalyst containing iron ions is 0.01-0.1%.
9. The chemical mechanical polishing solution according to claim 8,
the mass percentage content range of the catalyst containing iron ions is 0.01-0.03%.
10. The chemical mechanical polishing solution according to claim 1,
the stabilizer is an organic stabilizer.
11. The chemical mechanical polishing solution according to claim 10,
the organic stabilizer is a carboxylic acid that can complex with iron.
12. The chemical mechanical polishing solution according to claim 11,
the carboxylic acid capable of being complexed with iron is one or more of phthalic acid, oxalic acid, malonic acid, succinic acid, adipic acid, citric acid and maleic acid.
13. The chemical mechanical polishing solution according to claim 12,
the stabilizer is malonic acid.
14. The chemical mechanical polishing solution according to claim 13,
the mass percentage content range of the stabilizer is 0.01-0.09%.
15. The chemical mechanical polishing solution according to claim 14,
the mass percentage content range of the stabilizer is 0.01-0.06%.
16. The chemical mechanical polishing solution according to claim 1,
the oxidant is H2O2。
17. The chemical mechanical polishing solution according to claim 1,
the mass percentage content of the oxidant is 2-4%.
18. The chemical mechanical polishing liquid according to claim 1,
the pH regulator is HNO3。
19. The chemical mechanical polishing solution according to claim 1,
the pH value of the chemical mechanical polishing solution is 2-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011619699.1A CN114686109A (en) | 2020-12-30 | 2020-12-30 | Chemical mechanical polishing solution for tungsten polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011619699.1A CN114686109A (en) | 2020-12-30 | 2020-12-30 | Chemical mechanical polishing solution for tungsten polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114686109A true CN114686109A (en) | 2022-07-01 |
Family
ID=82133761
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011619699.1A Pending CN114686109A (en) | 2020-12-30 | 2020-12-30 | Chemical mechanical polishing solution for tungsten polishing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114686109A (en) |
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2020
- 2020-12-30 CN CN202011619699.1A patent/CN114686109A/en active Pending
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