CN113249175B - Application of post-chemical mechanical polishing cleaning solution - Google Patents

Application of post-chemical mechanical polishing cleaning solution Download PDF

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CN113249175B
CN113249175B CN202110459961.9A CN202110459961A CN113249175B CN 113249175 B CN113249175 B CN 113249175B CN 202110459961 A CN202110459961 A CN 202110459961A CN 113249175 B CN113249175 B CN 113249175B
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cleaning solution
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mass fraction
mass
water
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CN113249175A (en
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王溯
马丽
何加华
史筱超
李健华
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Shanghai Xinyang Semiconductor Material Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/168—Organometallic compounds or orgometallic complexes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2096—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • C11D2111/22—

Abstract

The invention discloses an application of a cleaning solution after chemical mechanical polishing. The cleaning liquid comprises the following raw materials in parts by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex shown as the formula A, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and 14 to 75 percent of water, wherein the sum of the mass fractions of the components is 100 percent. The cleaning solution has the advantages of stronger cleaning capability, lower corrosion rate, stronger BTA removing capability and better stability, and can simultaneously realize the effects of cleaning, corrosion inhibition and BTA removing.

Description

Application of post-chemical mechanical polishing cleaning solution
Technical Field
The invention relates to application of a cleaning solution after chemical mechanical polishing.
Background
Metal materials such as copper, aluminum, tungsten, etc. are commonly used as conductive line materials in integrated circuits. Chemical Mechanical Polishing (CMP) is a major technique for wafer planarization in the fabrication of devices. The metal chemical mechanical polishing solution generally contains abrasive particles, a complexing agent, a metal corrosion inhibitor, an oxidizing agent, and the like. The abrasive particles are mainly silicon dioxide, aluminum oxide, silicon dioxide doped with aluminum or covered with aluminum, cerium dioxide, titanium dioxide, polymer abrasive particles and the like. After the metal CMP process, the wafer surface is contaminated with metal ions and abrasive particles themselves in the slurry, which can affect the electrical characteristics of the semiconductor and the reliability of the device. The residues of these metal ions and abrasive particles can affect the flatness of the wafer surface, which can degrade device performance and affect subsequent processing or device operation. Therefore, it is very necessary to remove metal ions, metal corrosion inhibitors and abrasive particles remaining on the wafer surface after the metal CMP process, to improve the hydrophilicity of the cleaned wafer surface, and to reduce surface defects.
In the process of developing the post-CMP cleaning solution, how to consider cleaning, corrosion inhibition and Benzotriazole (BTA) removal is a great technical difficulty in the synergistic development of the cleaning solution, the corrosion inhibition and the BTA removal.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to improve the performance of metal in all aspects after a CMP process, and provides application of a cleaning solution after chemical mechanical polishing. The cleaning solution has the advantages of stronger cleaning capability, lower corrosion rate, stronger BTA removing capability and better stability, and can simultaneously realize cleaning, corrosion inhibition and BTA removing.
The invention provides an application of a cleaning solution as a cleaning solution after chemical mechanical polishing, wherein the cleaning solution comprises the following components in parts by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex shown as the formula A, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and 14 to 75 percent of water, wherein the sum of the mass fractions of the components is 100 percent;
Figure BDA0003042050380000021
in the application, the strong base is a conventional strong base in the field, and preferably, the strong base is selected from one or more of quaternary ammonium base, quaternary phosphonium base and guanidine compound; more preferably, the strong base is a quaternary ammonium base, also for example, tetramethylammonium hydroxide.
The quaternary ammonium base is preferably a tetraalkyl quaternary ammonium base and/or a quaternary ammonium base having a hydroxyl substituent on the alkyl group.
The tetraalkyl quaternary ammonium base is preferably tetramethyl ammonium hydroxide and/or tetrapropyl ammonium hydroxide; such as tetramethylammonium hydroxide.
The quaternary ammonium base having a hydroxyl substituent on the alkyl group is preferably one or more of choline, (2-hydroxyethyl) trimethylammonium hydroxide, and tris (2-hydroxyethyl) methylammonium hydroxide.
The quaternary phosphonium base is preferably tetraalkyl quaternary phosphonium base and/or quaternary phosphonium base substituted with hydroxyl on the alkyl; more preferably, the quaternary phosphonium base is tetrabutyl phosphine oxide.
The guanidine compound is preferably tetramethylguanidine.
In said application, the alcohol amine is a conventional alcohol amine in the art, preferably monoethanolamine.
In such applications, the antioxidant is a conventional antioxidant in the art, preferably ascorbic acid.
In the application, the corrosion inhibitor is a corrosion inhibitor conventional in the field, and is preferably 2-mercaptobenzothiazole.
In such applications, the chelating agent is a chelating agent conventional in the art, preferably malonic acid.
In the application, the surfactant is a conventional surfactant in the field; the surfactant is preferably an ionic surfactant or a non-ionic surfactant, more preferably a non-ionic surfactant, such as dodecylbenzene sulfonic acid.
In the application, the water is conventional in the field, and the water is pure water; preferably, the water is selected from one or more of deionized water, distilled water and ultrapure water.
In the application, the mass fraction of the strong base is preferably 1% to 20%, and more preferably, the mass fraction of the strong base is 5% to 15%, for example, 20%, 15%, 5%, or 10%.
In the application, the mass fraction of the alcohol amine is preferably 1% to 10%, more preferably 5% to 8%, for example 8%.
In the application, the mass fraction of the antioxidant is preferably 0.002% to 0.1%, more preferably 0.005% to 0.01%, for example 0.01%.
In the application, the mass fraction of the copper complex shown in the formula a is preferably 0.01% to 0.05%, and more preferably, the mass fraction of the copper complex shown in the formula a is 0.01% to 0.03%, for example, 0.025%, 0.01%, 0.05% or 0.1%.
In the application, the mass fraction of the corrosion inhibitor is preferably 0.1% to 1%, more preferably 0.5% to 0.8%, for example 0.8%.
In the application, preferably, the mass fraction of the chelating agent is 0.1% to 1%, more preferably, the mass fraction of the chelating agent is 0.3% to 0.9%, for example, 0.9%.
In the application, the mass fraction of the surfactant is preferably 0.1% to 1%, more preferably 0.2% to 0.7%, for example 0.7%.
Preferably, the cleaning solution comprises the following raw materials in percentage by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.01 to 0.1 percent of copper complex shown as formula A, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and water for the balance, wherein the sum of the mass fractions of the components is 100 percent.
In a preferred embodiment, the cleaning solution is prepared from the following raw materials in scheme 1, scheme 2, scheme 3, scheme 4, scheme 5, scheme 6, scheme 7, scheme 8, scheme 9 or scheme 10:
in the scheme 1, the raw materials of the cleaning solution consist of the following components in percentage by mass: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.025 percent of copper complex shown as a formula A, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water for balancing, wherein the sum of the mass fractions of the components is 100 percent;
in the scheme 2, the raw materials of the cleaning solution consist of the following components in percentage by mass: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.01 percent of copper complex shown as a formula A, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water for balancing, wherein the sum of the mass fractions of the components is 100 percent;
in the scheme 3, the raw materials of the cleaning solution consist of the following components in percentage by mass: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.05 percent of copper complex shown as a formula A, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water for balancing, wherein the sum of the mass fractions of the components is 100 percent;
in the scheme 4, the raw materials of the cleaning solution consist of the following components in percentage by mass: 5 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.01 percent of copper complex shown as a formula A, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water for balancing, wherein the sum of the mass fractions of the components is 100 percent;
in the scheme 5, the raw materials of the cleaning solution consist of the following components in percentage by mass: 15% of choline, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.1% of copper complex shown as formula A, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid and water for balancing, wherein the sum of the mass fractions of the components is 100%;
in the scheme 6, the cleaning solution comprises the following raw materials in percentage by mass: 5% tetrapropylammonium hydroxide, 8% monoethanolamine, 0.01% ascorbic acid, 0.025% copper complex as shown in formula A, 0.8% 2-mercaptobenzothiazole, 0.9% malonic acid, 0.7% dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100%;
in the scheme 7, the raw materials of the cleaning solution consist of the following components in percentage by mass: 20% (2-hydroxyethyl) trimethyl ammonium hydroxide, 8% monoethanolamine, 0.01% ascorbic acid, 0.025% copper complex as shown in formula A, 0.8% 2-mercaptobenzothiazole, 0.9% malonic acid, 0.7% dodecylbenzene sulfonic acid, water to make up the balance, the sum of the mass fractions of the components is 100%;
in the scheme 8, the raw materials of the cleaning solution consist of the following components in percentage by mass: 10% of tris (2-hydroxyethyl) methylammonium hydroxide, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.025% of a copper complex represented by the formula A, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzenesulfonic acid, and the balance of water, wherein the sum of the mass fractions of the components is 100%;
in the scheme 9, the raw materials of the cleaning solution consist of the following components in percentage by mass: 15% of tetrabutyl hydrogen phosphine oxide, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.025% of copper complex shown as the formula A, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid and water to make up the balance, wherein the sum of the mass fractions of the components is 100%.
In the scheme 10, the raw materials of the cleaning solution consist of the following components in percentage by mass: 15% of tetramethylguanidine, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.025% of a copper complex represented by the formula A, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid and water in balance, wherein the sum of the mass fractions of the components is 100%.
Preferably, the cleaning solution is prepared by the following preparation method, and the preparation method comprises the following steps: and mixing the raw materials of the cleaning solution.
In the preparation method, the mixing is preferably performed by adding the solid in the raw materials of the cleaning solution into the liquid and uniformly stirring.
In the preparation method, the temperature of the mixing is preferably room temperature, for example, 20 to 35 ℃.
In the preparation method, preferably, the preparation method further comprises shaking and/or filtering; the purpose of the shaking is to mix the raw material components thoroughly, the shaking speed and time are not limited, and the filtration is to remove insoluble substances.
Preferably, the cleaning solution is a cleaning solution for a semiconductor device after chemical mechanical polishing, and more preferably, the semiconductor device is preferably one or more of a copper-based chip, a cobalt-based chip and a tungsten-based chip, such as a copper-based chip.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: the cleaning solution has stronger cleaning capability, lower corrosion rate, stronger BTA removing capability and better stability, and can simultaneously realize the effects of cleaning, corrosion inhibition and BTA removing.
Detailed Description
1. Examples 1-10 and preparation of comparative examples 1-3 cleaning solutions
The preparation method comprises the following steps:
the component types of the examples and the comparative examples also comprise water, and the raw materials of the components of the examples and the comparative examples are mixed. The temperature of mixing was room temperature. After mixing, the method further comprises shaking and filtering operations.
The raw material compositions of examples 1 to 10 are shown in Table 1.
TABLE 1
Figure BDA0003042050380000061
The structure of the copper (I) complex is shown as formula A:
Figure BDA0003042050380000062
the contents of the respective raw materials of examples 1 to 10 are shown in Table 2 (less than 100% of the raw materials were made up with water).
TABLE 2
Figure BDA0003042050380000063
Figure BDA0003042050380000071
The raw material compositions of comparative examples 1 to 3 are shown in Table 3.
TABLE 3
Figure BDA0003042050380000072
The methylene bridged 1,8-naphthyridine ligand is shown as the formula
Figure BDA0003042050380000073
The biquinolylphosphine copper (I) bromide complex is represented by the formula>
Figure BDA0003042050380000074
The copper (III) sulfate complex is cuprous tris (1-isocyano-2-methoxy-2-methylpropane) sulfate.
The contents of the respective raw materials of comparative examples 1 to 3 are shown in Table 4 (less than 100% of the total amount was made up with water).
TABLE 4
Figure BDA0003042050380000075
2. Performance test of cleaning solutions of examples 1 to 10 and comparative examples 1 to 3
1. Preparation of copper wafers:
1.1, pretreatment: for 8 inch Cu plated wafers (copper plating thickness about 1 um), 10% was adopted 2 SO 4 Treating at 25 deg.C for 2min;
1.2, cleaning with pure water, and drying with nitrogen;
2. polishing:
the polishing machine is 8' Mirra, the rotating speed of the polishing disk and the polishing head is 93/87rpm, the flow rate of the polishing solution is 150ml/min, the polishing pad used for copper polishing is IC1010, and the polishing pad used for barrier layer polishing is Fujibo H7000. The copper polishing solution was AEP U3000 and the barrier layer polishing solution was TCU2000H4. The prepared copper wafer is subjected to a polishing process.
3. Detection of ER
The test method comprises the following steps:
3.1, cutting the polished copper wafer into square pieces of 3cm by 3 cm;
3.2, measuring the thickness of the copper wafer and the functional relation of the resistivity of the copper wafer by adopting a four-point probe instrument to generate a regression curve, and determining the functional relation of the thickness of the copper and the resistivity for calculating the corrosion rate of the copper;
3.3, soaking 50ml of cleaning solution at 25 ℃ for 1min for corrosion;
and 3.4, measuring the resistance by a four-point probe instrument, then calculating the thickness change of the metal before and after corrosion, and calculating the corrosion rate.
4. Surface corrosion detection
The test method comprises the following steps:
4.1, cutting the polished copper wafer into square pieces of 3cm by 3 cm;
4.2, soaking the substrate for 1min at 25 ℃ by adopting a cleaning solution for corrosion;
4.3, the copper wafer after etching is subjected to Atomic Force Microscope (AFM) test to test the RMS value.
5. Cleaning capability detection
The test method comprises the following steps:
5.1, cutting the polished copper wafer into square pieces of 3cm by 3 cm;
5.2, soaking and cleaning for 2min in a cleaning solution at 25 ℃;
5.3, observation under SEM.
6. BTA removal capability
BTA residual thickness (nm) detection method:
1. cutting the polished copper wafer into 3 cm-by-3 cm square pieces;
2. treating with 3% citric acid at 25 deg.C for 2min; soaking the copper sheet in 1+1 nitric acid solution, treating at 25 ℃ for 2min, and testing the thickness of the copper by using a surface profiler;
3. cleaning with pure water and drying with nitrogen;
4. Cu-BTA film formation: soaking the treated copper sheet in 3% hydrogen peroxide +0.5% BTA +20ppm sulfuric acid solution at 25 ℃ for 10min;
5. removal of BTA: soaking the copper sheet with the BTA film in different cleaning solutions (soaking for 1min at 25 ℃), and measuring the thickness by using a profilometer to represent the BTA removal effect;
detection of change in contact angle:
1. cutting the polished copper wafer into 3 cm-by-3 cm square pieces;
2. treating with 3% citric acid at 25 deg.C for 2min; then testing the contact angle of the deionized water;
3. cleaning with pure water and drying with nitrogen;
4. Cu-BTA film formation: soaking the treated copper sheet in 3% hydrogen peroxide +0.5% BTA +20ppm sulfuric acid solution at 25 ℃ for 10min; testing the contact angle of deionized water;
5. removal of BTA: soaking the copper sheet with the BTA film in a cleaning solution (soaking for 2min at 25 ℃), and testing the contact angle of deionized water;
the BTA film has certain hydrophobicity, and whether the BTA is completely removed or not is characterized by subtracting the contact angle measured in the step 2 from the step 5. The more BTA residuals are accounted for if the difference is larger and positive.
7. Solution stability testing
0.4 liter of the cleaning solution was poured into a 0.5L plastic container, the remaining 0.1 liter was filled with nitrogen gas, and the following changes were observed in the placement for 4 days, 7 days, and 1 month:
1. a change in color of the solution;
2. the generation of bubbles;
3. a change in pH;
4. change in copper corrosion rate (detection method same as before);
5. the change in surface roughness RMS was measured by AFM (the measurement method was the same as described above).
Evaluation criteria for effects:
the results of the performance test and the results of the stability test of the cleaning solutions of examples 1 to 10 and the cleaning solutions of comparative examples 1 to 3 are shown in tables 5 to 12.
Table 5: EXAMPLES 1-10 cleaning solution Performance test results (fresh formulation)
Figure BDA0003042050380000101
Table 6: examples 1-10 stability test results (day 4)
Figure BDA0003042050380000102
Table 7: examples 1-10 stability test results (day 7)
Figure BDA0003042050380000103
Figure BDA0003042050380000111
Table 8: examples 1-10 stability test results (day 30)
Figure BDA0003042050380000112
Table 9: comparative examples 1-3 cleaning solution Performance test results (fresh preparation)
Figure BDA0003042050380000113
Table 10: comparative examples 1-3 stability test results (day 4)
Figure BDA0003042050380000114
Table 11: comparative examples 1-3 stability test results (day 7)
Figure BDA0003042050380000121
Table 12: comparative examples 1-3 stability test results (month 1)
Figure BDA0003042050380000122
According to the cleaning solution performance test results (tables 5 and 9) of examples 1 to 10 and comparative examples 1 to 3, compared with the cleaning solution of the comparative example, the cleaning solution of the present invention has stronger cleaning ability, lower corrosion rate and stronger BTA removal ability, and can simultaneously achieve cleaning, corrosion inhibition and BTA removal. According to the cleaning solution stability test results of examples 1 to 10 and comparative examples 1 to 3 (tables 6 to 8 and tables 10 to 12, the cleaning solution of the present invention did not significantly deteriorate at 1 month (30 days) compared to the cleaning solution of the comparative example, and the cleaning solution remained colorless and free of bubbles.

Claims (10)

1. The application of the cleaning solution as the cleaning solution after chemical mechanical polishing is characterized in that the cleaning solution comprises the following components in percentage by mass: 0.01 to 25 percent of strong base, 0.01 to 30 percent of alcohol amine, 0.001 to 1 percent of antioxidant, 0.025 to 0.05 percent of copper complex shown as the formula A, 0.01 to 10 percent of corrosion inhibitor, 0.01 to 10 percent of chelating agent, 0.01 to 5 percent of surfactant and 14 to 75 percent of water, wherein the sum of the mass fractions of the components is 100 percent;
the alcohol amine is monoethanolamine;
the antioxidant is ascorbic acid;
the corrosion inhibitor is 2-mercaptobenzothiazole;
the chelating agent is malonic acid;
the surfactant is dodecyl benzene sulfonic acid;
the strong base is quaternary ammonium base; the quaternary ammonium base is tetraalkyl quaternary ammonium base;
the tetraalkyl quaternary ammonium hydroxide is tetramethylammonium hydroxide and/or tetrapropylammonium hydroxide;
Figure DEST_PATH_IMAGE002
。
2. the use of the cleaning solution as claimed in claim 1 as a post-CMP cleaning solution,
the water is pure water;
and/or the mass fraction of the strong base is 1-20%;
and/or the mass fraction of the alcohol amine is 1-10%;
and/or the mass fraction of the antioxidant is 0.002% -0.1%;
and/or the mass fraction of the corrosion inhibitor is 0.1-1%;
and/or the mass fraction of the chelating agent is 0.1-1%;
and/or the mass fraction of the surfactant is 0.1-1%.
3. The use of the cleaning solution according to claim 2 as a post-cmp cleaning solution, wherein the water is selected from one or more of deionized water, distilled water, and ultrapure water;
and/or the mass fraction of the strong base is 5-15%;
and/or, the mass fraction of the alcohol amine is 5% -8%;
and/or the mass fraction of the antioxidant is 0.005% -0.01%;
and/or the mass fraction of the copper complex shown as the formula A is 0.025-0.03%;
and/or the mass fraction of the corrosion inhibitor is 0.5-0.8%;
and/or the mass fraction of the chelating agent is 0.3-0.9%;
and/or the mass fraction of the surfactant is 0.2-0.7%.
4. The use of the cleaning solution as claimed in claim 1, wherein the alkali is present in an amount of 20%, 15%, 5% or 10% by weight;
and/or the mass fraction of the alcohol amine is 8%;
and/or the mass fraction of the antioxidant is 0.01%;
and/or the mass fraction of the copper complex shown as the formula A is 0.025% or 0.05%;
and/or the mass fraction of the corrosion inhibitor is 0.8%;
and/or the mass fraction of the chelating agent is 0.9%;
and/or the mass fraction of the surfactant is 0.7%.
5. The use of the cleaning solution as claimed in claim 1, wherein the cleaning solution is prepared from any one of the following solutions:
the cleaning solution comprises the following raw materials in parts by mass: 15 percent of tetramethylammonium hydroxide, 8 percent of monoethanolamine, 0.01 percent of ascorbic acid, 0.025 percent of copper complex shown as a formula A, 0.8 percent of 2-mercaptobenzothiazole, 0.9 percent of malonic acid, 0.7 percent of dodecylbenzene sulfonic acid and water for balancing, wherein the sum of the mass fractions of the components is 100 percent;
the cleaning solution comprises the following raw materials in parts by mass: 15% tetramethylammonium hydroxide, 8% monoethanolamine, 0.01% ascorbic acid, 0.05% copper complex represented by formula A, 0.8% 2-mercaptobenzothiazole, 0.9% malonic acid, 0.7% dodecylbenzenesulfonic acid, water to the balance, the sum of the mass fractions of the components being 100%;
the cleaning solution comprises the following raw materials in parts by mass: 5% tetrapropylammonium hydroxide, 8% monoethanolamine, 0.01% ascorbic acid, 0.025% copper complex as shown in formula A, 0.8% 2-mercaptobenzothiazole, 0.9% malonic acid, 0.7% dodecylbenzene sulfonic acid, and water to make up the balance, wherein the sum of the mass fractions of the components is 100%;
the cleaning solution comprises the following raw materials in parts by mass: 15% of tetramethylguanidine, 8% of monoethanolamine, 0.01% of ascorbic acid, 0.025% of a copper complex represented by the formula A, 0.8% of 2-mercaptobenzothiazole, 0.9% of malonic acid, 0.7% of dodecylbenzene sulfonic acid and water in balance, wherein the sum of the mass fractions of the components is 100%.
6. The use of the cleaning solution as claimed in any one of claims 1 to 5 as a cleaning solution after chemical mechanical polishing, wherein the cleaning solution is prepared by a preparation method comprising the steps of: and mixing the raw materials of the cleaning solution.
7. The use of the cleaning solution as a cleaning solution after chemical mechanical polishing according to claim 6, wherein the mixing is performed by adding a solid in the raw materials of the cleaning solution into a liquid and stirring the mixture uniformly;
and/or the temperature of the mixing is 20 to 35 o C；
And/or, the preparation method further comprises shaking and/or filtering.
8. The use of the cleaning solution as claimed in claim 1, wherein the cleaning solution is a cleaning solution for semiconductor devices after chemical mechanical polishing.
9. The use of the cleaning solution as a cleaning solution after chemical mechanical polishing according to claim 8, wherein the semiconductor device is one or more of a copper-based chip, a cobalt-based chip, and a tungsten-based chip.
10. The use of the cleaning solution as a post-cmp cleaning solution according to claim 9, wherein the semiconductor device is a copper-based chip.
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