CN111378385B - Application of alpha alumina abrasive in PI material polishing - Google Patents
Application of alpha alumina abrasive in PI material polishing Download PDFInfo
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- CN111378385B CN111378385B CN201811654586.8A CN201811654586A CN111378385B CN 111378385 B CN111378385 B CN 111378385B CN 201811654586 A CN201811654586 A CN 201811654586A CN 111378385 B CN111378385 B CN 111378385B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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Abstract
The invention provides an application of an alpha alumina abrasive in PI material polishing, wherein the alpha alumina abrasive is mixed in a chemical mechanical polishing solution forming composition, the content of the alpha alumina abrasive is 0.1% -1.0%, and the chemical mechanical polishing solution has good colloid stability in a pH <7 range. According to the invention, the alpha alumina abrasive is used, and the polishing rate of the PI material is improved by controlling the content of the alpha alumina and the pH value of the polishing solution.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to application of an alpha alumina abrasive in PI material polishing.
Background
With the growing development of science and technology, the trend of the semiconductor production industry towards low-dimensional, large-scale (LSI) and even ultra-large-scale (ULSI) integration is becoming increasingly evident. When the size of electronic components is reduced to a certain scale, the inductance-capacitance effect between wirings is gradually enhanced, and the mutual influence of the wire currents is that the signal hysteresis phenomenon becomes very prominent, thereby seriously affecting the development of the semiconductor industry. Lowering the dielectric constant of the dielectric material can reduce the electronic delay between the interconnect layers, thereby becoming an important means of reducing the signal lag time. This depends on the development and application of new low and ultra-low dielectric materials.
SiO 2 Is a common dielectric material, but the material has the problem of higher dielectric constant (dielectric constant is about 4.0). Some polymer materials have a relatively low dielectric constant, but most of them have a glass transition temperature below 400 degrees celsius and cannot withstand the process environment such as thermal cycling in semiconductor processing, making them unsuitable for use as dielectric materials in ULSI semiconductor devices.
Tai et al reported for the first time "applied to CMP polishing of ULSI low dielectric constant PI materials" (see: 1999International Symposium on VLSITechnology,Systems,and Applications.Proceedings of Technical Papers. (Cat. No. 99TH8453), june 10,1999). Thereafter, polyimide (PI) can simultaneously satisfy a plurality of performance requirements of low dielectric constant, high mechanical strength, high glass transition temperature, and the like due to its excellent heat resistance and simple synthesis process, and is easily formed on the wafer surface, thereby being widely used as a dielectric material in a Through Silicon Via (TSV) process. Currently, the most commonly used PI dielectric material is PI-2610 (manufactured by Hitachi corporation) dielectric material manufactured by Hitachi corporation.
In the case where PI is widely used as a dielectric material in semiconductor production, a polishing method for PI material is also receiving attention. Among the current cmp slurries, SS25 slurry containing 12.5% silicon oxide is an effective PI dielectric chemical mechanical slurry product. However, such polishing solutions are not widely used, and particularly have a low polishing rate for the aforementioned PI-2610 type dielectric materials. Therefore, there is a need to develop a chemical mechanical polishing solution capable of polishing PI-2610 type dielectric materials rapidly and efficiently.
Disclosure of Invention
In order to solve the problems, the invention provides an application of alpha alumina abrasive in PI material polishing, wherein the alpha alumina abrasive is used for improving the polishing rate of PI material by controlling the content of alpha alumina and the pH value of polishing solution.
Alpha alumina is the most stable phase of all aluminas, its stability has a close relationship with its crystal structure, oxygen ions in its structure are approximately close packed in hexagonal order, and aluminum atoms are filled in its octahedral voids. The whole crystal can be seen as countless octahedrons [ AlO ] 6 ]The large 'molecules' formed by coplanar combination have high molecular stability. Therefore, the alpha alumina particles have the characteristics of uniform particle size distribution, high purity, low specific surface, strong heat resistance, good formability, stable crystalline phase, high hardness, good dimensional stability and the like, and meet the requirements of chemical mechanical polishing on grinding particles: the finer the powder, the better the particle size distribution, the narrower the particle size distribution, the smoother the surface and the higher the hardness.
The invention provides an application of an alpha alumina abrasive in PI material polishing, wherein the alpha alumina abrasive is mixed in a chemical mechanical polishing solution forming composition, the content of the alpha alumina abrasive is 0.1% -1.0%, and the chemical mechanical polishing solution has good colloid stability in a pH <7 range.
Preferably, the alpha alumina abrasive is spherical, has a particle size of 20-200nm, has higher polishing activity, and causes few defects after polishing.
Preferably, the alpha alumina abrasive is present in an amount of 0.5% to 1.0%.
Preferably, the pH value of the chemical mechanical polishing solution is 2.3-5.0.
Preferably, the pH value of the chemical mechanical polishing solution is 3.6-5.0.
Other components of the polishing solutions of the present invention that are conventional in the art for polishing dielectric materials may also be included in the chemical mechanical polishing solutions of the present invention.
In the present invention, the pH of the chemical mechanical polishing liquid can be adjusted using a pH adjustor conventionally used in the art.
Compared with the prior art, the invention has the technical advantages that: the alpha alumina abrasive is used in the polishing solution, and the polishing rate of the PI dielectric material can be improved by controlling the content of the alpha alumina and the pH value of the polishing solution, so that the control range of the polishing rate of the PI dielectric material is realized, and the application range of the polishing solution is improved.
Drawings
Fig. 1 is an SEM analysis of alpha alumina abrasive grains of the present invention.
Detailed Description
The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following examples.
Table 1 shows examples 1-5 and comparative example 1 of the chemical mechanical polishing solutions of the present invention. Wherein, the embodiment of the invention adopts alpha alumina abrasive as acid alpha alumina.
Table 1 comparative example 1 and polishing solutions 1 to 5 of the present invention
The chemical mechanical polishing solutions of examples 1 to 5 and comparative example 1 described above were used to polish PI-2610 dielectric materials produced by Hitachi, inc., and the polishing effects were compared to obtain the following comparative results of Table 2.
Wherein, the polishing conditions are as follows: the IC1010 polishing pad, polishing disk and polishing head were rotated at 93rpm and 87rpm, respectively, with a downforce of 4psi, a slurry flow rate of 150mL/min, and a polishing time of 60 seconds.
Table 2 compares polishing rates of polishing liquid 1 and inventive polishing liquids 1-5 on PI-2610 dielectric materials
As can be seen from table 2, the polishing liquid of the present invention can obtain a higher PI material polishing rate than comparative example 1. Compared with comparative example 1, which requires 16.7% silicon oxide, it can be seen from examples 1 and 2 of the present invention that the polishing rate of PI material can be about 2 times that of comparative example 1 by using only an alpha alumina abrasive having a solid content of 0.1%. In contrast, referring to examples 3 and 4, the polishing rate of the polishing liquid on the PI material can be greatly improved by adjusting the content of the alpha alumina abrasive and the pH value of the polishing liquid. In example 5, the highest polishing rate was achieved for PI materialCorresponding to 27 times the polishing rate of the comparative polishing solution.
On the other hand, it can also be seen from table 2 that the pH has a significant effect on the rate at which the PI material is polished by the polishing liquid containing the alpha alumina abrasive. As can be seen from comparative examples 1 to 3, the polishing rate of the polishing liquid on the PI material was comparable at the same amount of alumina and at pH values of 2.3 and 3.6, i.e., the smaller change in pH had no significant effect on the polishing rate of the PI material at the same amount of alumina, but the polishing rate of the polishing liquid at pH 5.0 in example 3 was about 4 times that at pH values of 2.3 and 3.6, and it was found that the larger change in pH had a significant effect on the polishing rate of the PI material at the same amount of alumina and the polishing rate of the polishing liquid on the PI material was higher at weak acid. This is because the repulsive force between the colloidal particles in the polishing liquid and the surface of the PI material is reduced when the pH of the polishing liquid is raised from 3.6 to 5.0, thereby improving the polishing rate of the PI material.
In addition, as can be seen from comparative examples 2, 4, and 5, the polishing rate of the polishing liquid to the PI material increases greatly with an increase in the content of alpha alumina while maintaining the same pH of the polishing liquid, wherein the polishing rate of the polishing liquid to the PI material increases about every 0.5% of the increase in the amount of aluminaFrom the above, it can be seen that at the same pH of the slurry, the effect of the alpha alumina content on the rate at which the slurry polishes PI material is significant. That is, at the same pH of the polishing liquid, the higher the alpha alumina content, the greater the polishing rate of the polishing liquid.
Meanwhile, as can be seen from comparison of examples 3 and 4, the effect of the content of alpha alumina in the polishing liquid on the rate of polishing PI material by the polishing liquid is more remarkable as compared with the pH of the polishing liquid, so that the rate of polishing PI material by the polishing liquid can be reached at the highest when the content of alpha alumina is 1.0% and the pH of the polishing liquid is 3.6
Referring to the SEM image of FIG. 1, the alpha alumina used in the present invention is spherical and has a particle size of 20-200nm. It can be seen that the grain shape is nearly spherical, the surface is smooth, and alpha alumina with the grain size ranging from 20 nm to 200nm can meet the requirement of polishing on grinding grains.
In summary, the alpha alumina abrasive is used in the polishing solution, and the polishing rate of the PI dielectric material can be improved by controlling the content of the alpha alumina and the pH value of the polishing solution, so that the control range of the polishing rate of the PI dielectric material is realized, and the application range of the polishing solution is improved.
It should be understood that the detailed description is directed to particular embodiments of the invention, but is intended to be exemplary only and that the invention is not limited to the particular embodiments described above. Any equivalent modifications and substitutions for the present invention will occur to those skilled in the art, and are also within the scope of the present invention. Accordingly, equivalent changes and modifications are intended to be included within the scope of the present invention without departing from the spirit and scope thereof.
Claims (3)
1. Use of an alpha alumina abrasive in PI-2610 dielectric material polishing, wherein the alpha alumina abrasive is mixed in a chemical mechanical polishing solution forming composition, the alpha alumina abrasive content is 0.1% -1.0%; the alpha alumina abrasive is spherical and has the particle size of 20-200 nm; the pH value of the chemical mechanical polishing solution is 2.3-5.0.
2. The use according to claim 1, characterized in that,
the content of the alpha alumina abrasive is 0.5% -1.0%.
3. The chemical mechanical polishing liquid according to claim 1, wherein,
the pH value of the chemical mechanical polishing solution is 3.6-5.0.
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| CN201811654586.8A CN111378385B (en) | 2018-12-28 | 2018-12-28 | Application of alpha alumina abrasive in PI material polishing |
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| CN201811654586.8A CN111378385B (en) | 2018-12-28 | 2018-12-28 | Application of alpha alumina abrasive in PI material polishing |
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| CN111378385B true CN111378385B (en) | 2023-08-08 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102268224A (en) * | 2010-06-01 | 2011-12-07 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing liquid with controllable silicon oxide removal rate |
| CN103484024A (en) * | 2013-09-13 | 2014-01-01 | 上海新安纳电子科技有限公司 | Chemico-mechanical polishing liquid for silicon dioxide dielectric materials and preparing method thereof |
| CN104559798A (en) * | 2014-12-24 | 2015-04-29 | 上海新安纳电子科技有限公司 | Alumina-based chemical mechanical polishing slurry |
| CN104745089A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid for flattening barrier layer and use method thereof |
| CN105778774A (en) * | 2014-12-23 | 2016-07-20 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
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- 2018-12-28 CN CN201811654586.8A patent/CN111378385B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102268224A (en) * | 2010-06-01 | 2011-12-07 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing liquid with controllable silicon oxide removal rate |
| CN103484024A (en) * | 2013-09-13 | 2014-01-01 | 上海新安纳电子科技有限公司 | Chemico-mechanical polishing liquid for silicon dioxide dielectric materials and preparing method thereof |
| CN104745089A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid for flattening barrier layer and use method thereof |
| CN105778774A (en) * | 2014-12-23 | 2016-07-20 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN104559798A (en) * | 2014-12-24 | 2015-04-29 | 上海新安纳电子科技有限公司 | Alumina-based chemical mechanical polishing slurry |
Non-Patent Citations (1)
| Title |
|---|
| Effect of Chemicals and Slurry Particles on Chemical Mechamical Polishing of Polyimide;Hyoung-Gyun KIM et al.;《Japanese Journal of Applied Physics》;20000331;1085-1090 * |
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