KR102373924B1 - Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor by using the same - Google Patents

Abstract

Provided is a slurry composition for chemical mechanical comprising: cerium oxide particles; and a solvent, wherein the cerium oxide particles consist of primary particles having a size of 1-5 nm and secondary particles having a size of 2-15 nm, and the surface of the cerium oxide particles comprises Ce^3+ and Ce^4+. According to the present invention, the proportion of Ce^3+ contained in the surface of the cerium oxide is increased, thereby being able to exhibit a high oxide film removal rate in a low content range in spite of the fine particle size.

Description

Chemical mechanical polishing slurry composition and method of manufacturing a semiconductor device

The present invention relates to a chemical mechanical polishing slurry composition and a method for manufacturing a semiconductor device, and more particularly, by increasing the ratio of Ce ³⁺ on the surface of ceria through synthesis, unlike conventional cerium oxide particles, a low content despite a small particle size To a slurry composition for chemical mechanical polishing having a high oxide film removal rate and a method for manufacturing a semiconductor device using the same.

As semiconductor devices are diversified and highly integrated, finer pattern forming techniques are being used, and accordingly, the surface structure of the semiconductor device is more complicated and the step difference between the surface layers is also increasing. In manufacturing a semiconductor device, a chemical mechanical polishing (CMP) process is used as a planarization technique for removing a step difference in a specific film formed on a substrate. For example, as a process for removing an insulating film excessively formed for interlayer insulation, interlayer dielectronic (ILD) and a process and wiring for planarization of an insulating film for shallow trench isolation (STI) that insulates between chips; It is widely used as a process for forming a metal conductive film such as a contact plug and a via contact.

In the CMP process, the polishing rate, the degree of flatness of the polished surface, and the degree of occurrence of scratches are important, and are determined by the CMP process conditions, the type of slurry, the type of the polishing pad, and the like. For the cerium oxide slurry, high-purity cerium oxide particles are used. In recent years, in the manufacturing process of a semiconductor element, it is calculated|required to achieve further refinement|miniaturization of wiring, and the grinding|polishing flaw which generate|occur|produces at the time of grinding|polishing has become a problem.

Conventional cerium oxide slurries use particles with a size of 25 nm to 200 nm, and when polishing is performed, even if fine polishing scratches are generated, it is not a problem if it is smaller than the conventional wiring width. At this point, it becomes a problem. In response to this problem, attempts have been made to reduce the average particle diameter of the cerium oxide particles. However, in the case of conventional particles, if the average particle diameter is reduced, the mechanical action is reduced, and thus the polishing rate is reduced.

Even if it is intended to control the polishing rate and polishing scratches by controlling the average particle diameter of the cerium oxide particles as described above, it is very difficult to achieve the target level of polishing scratches while maintaining the polishing rate.

In addition, in the conventional slurry composition for chemical mechanical polishing, the cerium oxide particles optimize the Ce ³⁺ to Ce ⁴⁺ ratio, and at the same time, do not present an optimized average particle diameter, and thus the Ce ³⁺ of the ceria surface There is a need for research on polishing slurries containing ceria particles, which exhibit a high oxide film removal rate despite a small particle size by increasing the ratio.

The present invention has been devised to solve the above problems, and an embodiment of the present invention provides a slurry composition for chemical mechanical polishing

In addition, another embodiment of the present invention provides a method of manufacturing a semiconductor device comprising the step of polishing using the chemical mechanical polishing slurry composition.

However, the technical problems to be achieved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned are clearly understood by those of ordinary skill in the art to which the present invention belongs from the description below. it could be

As a technical means for achieving the above-described technical problem, one aspect of the present invention is,

cerium oxide particles; and a solvent, wherein the cerium oxide particles have a primary particle size of 1 to 5 nm, a secondary particle size of 2 to 15 nm, and a content of the cerium oxide particles adjusted to 1.0 wt% in an aqueous dispersion of 450 The average light transmittance is 50% or more with respect to ~800 nm wavelength light, and Ce ³⁺ and Ce ⁴⁺ are included on the surface of the cerium oxide particles, and the cerium oxide particles have a Raman peak spectrum of 2 or more. It provides a slurry composition for chemical mechanical polishing.

The cerium oxide particles have a first Raman peak within a band range of 455 cm ⁻¹ to 460 cm ⁻¹ , a second Raman peak within a band range of 587 cm ⁻¹ to 627 cm ⁻¹ and 712 cm ⁻¹ to 772 cm ⁻ It may be characterized as having a third Raman peak spectrum within a band range of ¹ .

A ratio A/B of the first Raman peak intensity (A) to the second Raman peak intensity (B) may be 25 or less.

A ratio A/C of the first Raman peak intensity (A) to the third Raman peak intensity (C) may be 50 or less.

It may be characterized in that 30% or more of Ce ³⁺ is included on the surface of the cerium oxide particles.

The average primary particle size of the cerium oxide particles may be 1 to 10 nm.

In the aqueous dispersion in which the content of the cerium oxide particles is adjusted to 1.0% by weight, the average light transmittance with respect to light having a wavelength of 800 nm is 90% or more.

The cerium oxide particles may be included in an amount of 0.01 to 5 parts by weight based on 100 parts by weight of the total composition.

The composition may have a pH of 2 to 7.

The solvent may be deionized water.

In addition, another aspect of the present invention,

It provides a method of manufacturing a semiconductor device comprising the step of polishing using the chemical mechanical polishing slurry composition.

According to an embodiment of the present invention, by increasing the ratio of Ce ³⁺ on the surface of ceria, it is possible to maintain a high oxide film removal rate at a low content in spite of a small particle size.

It should be understood that the effects of the present invention are not limited to the above-described effects, and include all effects that can be inferred from the configuration of the invention described in the detailed description or claims of the present invention.

1 illustrates an oxide film removal mechanism according to an embodiment of the present invention.
Figure 2a shows the XRD analysis result of the cerium oxide particles prepared according to an embodiment of the present invention.
Figure 2b compares the XRD analysis results of the cerium oxide particles prepared according to the present invention and the general cerium hydroxide particles.
Figure 3a shows the results of the Raman (Raman) peak spectrum of the ceria particles prepared in the size of 60nm.
Figure 3b shows the results of the Raman peak spectrum of the cerium oxide particles prepared according to an embodiment of the present invention.
Figure 3c shows the results of comparison of the Raman peak spectrum of ceria particles prepared in a size of 60 nm and cerium oxide particles prepared according to an embodiment of the present invention.
4A and 4B are TEM/SEM images of cerium oxide particles according to an embodiment of the present invention.
Figure 4c is a Malvern Zerasizer (DLS method) results of cerium oxide particles according to an embodiment of the present invention, showing the results of the size of the secondary particles.
Figure 5a shows the light transmittance analysis result of the cerium oxide particles according to an embodiment of the present invention.
Figure 5b shows the light transmittance analysis results according to the wavelength of the cerium oxide particles according to an embodiment of the present invention.

Hereinafter, the present invention will be described in more detail. However, the present invention may be embodied in various different forms, and the present invention is not limited by the embodiments described herein, and the present invention is only defined by the claims to be described later.

In addition, the terms used in the present invention are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the entire specification of the present invention, 'including' any component means that other components may be further included, rather than excluding other components, unless otherwise stated.

One aspect of the present application is

cerium oxide particles; and a solvent, wherein the cerium oxide particles have a primary particle size of 1 to 5 nm, a secondary particle size of 2 to 15 nm, and Ce ³⁺ and Ce ⁴⁺ on the surface of the cerium oxide particle, and It provides a slurry composition for chemical mechanical polishing, characterized in that there is.

Hereinafter, the slurry composition for chemical mechanical polishing according to an aspect of the present application will be described in detail.

1 illustrates an oxide film removal mechanism according to an embodiment of the present invention. As shown in FIG. 1 , it is necessary to activate Ce ³⁺ ions on the surface of ceria particles to smoothly react with SiO ₂ .

A slurry composition for chemical mechanical polishing according to an aspect of the present invention includes cerium oxide particles and a solvent.

The cerium oxide particles included as abrasive particles may have a positive zeta potential value, and preferably have a zeta potential value of 10 to 50 mV. As the zeta potential value of the cerium oxide particles has a positive value, the polarity of the surface of the silicon oxide film shows a negative value, and the polishing efficiency is increased by the attractive force between the cerium oxide particles and the surface of the silicon oxide film to have a step difference. It is possible to suppress the occurrence of a loading effect of a slow initial polishing rate in the pattern.

Although the cerium oxide particles have lower hardness than silica particles or alumina particles, the polishing rate of a surface containing silicon such as glass or semiconductor substrate is very high due to a chemical polishing mechanism in which a Si-O-Ce bond is formed between silica and cerium. It is fast and advantageous for polishing semiconductor substrates.

Preferably, the cerium oxide particles may have a primary particle size (TEM measurement) of 1 to 10 nm, and a secondary particle size of about 25 nm or less. More preferably, the size of the primary particles may be 1 to 5 nm, and the size of the secondary particles may be about 2 to 15 nm. More preferably, the size of the primary particles may be 1 to 4 nm, and the size of the secondary particles may be about 2 to 12 nm. When the size of the primary particles of the cerium oxide is less than 1 nm, crystallinity is lowered, the polishing rate for the target film is inhibited, so polishing efficiency may be reduced, and conversely, if it exceeds 10 nm, there is a risk of surface defects such as scratches there is. Also, in one embodiment of the present application, the average primary particle size of the cerium oxide particles may be 1 to 15 nm, preferably 1 to 12 nm, more preferably 1 to 10 nm.

Therefore, it may have an average particle size of 1 to 20 nm in consideration of an appropriate polishing rate of the film to be polished and dispersion stability in the slurry composition. Preferably, it may have an average particle size of 2 to 15 nm, more preferably 3 to 12 nm, specifically, may have an average particle size of 3 to 10 nm.

The cerium oxide primary particles have an equiaxed shape, a tetragonal shape, an orthorhombic shape, a rhombohedral shape, a monoclinic shape, a hexagonal shape, and a tetragonal shape. It may be at least one selected from the group consisting of a triclinic shape and a cuboctahedron shape, but preferably an equiaxed, tetragonal or orthorhombic system, which is a cuboid or a cube, and more preferably a hexahedron. It may be equiaxed.

According to an embodiment of the present invention, the cerium oxide particles may be prepared by a method of growing particles through chemical synthesis, and preferably may be a bottom-up method. As a method for synthesizing the cerium oxide particles, methods such as a sol-gel method, a supercritical reaction, a hydrothermal reaction, or a co-precipitation method may be used, but are not limited thereto. The bottom-up method is a method of growing a starting material of atoms or molecules into nanometer-sized particles through a chemical reaction as a type of chemical synthesis that has recently been spotlighted.

In the generation of secondary particles of abrasives, each solvent has a unique dielectric constant value, and the dielectric constant of the solvent changes the surface energy or surface charge in nucleation and crystal growth during powder synthesis, so that nuclei agglomerate and grow This affects the size and shape of the powder. The dielectric constant of the solvent and the surface potential (zeta potential) of the particles dispersed in the solvent are in a proportional relationship with each other. If the zeta potential is low, the surface repulsion force between the microparticles or between the nuclei generated by the reaction is small. Aggregation between particles or between nuclei can occur at very high rates. At this time, since the magnitude of the surface repulsion force is similar between the fine particles or the nuclei, aggregation with a uniform size is possible. These agglomerated secondary particles undergo a strong aggregation action of primary fine particles or nuclei or particle aggregation processes such as Ostwald ripening depending on reaction conditions such as temperature and concentration to grow into relatively large-sized particles. do.

The cerium oxide particles may be included in an amount of 0.01 to 5% by weight, more preferably 0.03 to 3% by weight, and still more preferably 0.05 to 1% by weight based on the total amount of the chemical mechanical polishing slurry composition.

The cerium oxide particles of the present invention exhibit Raman spectral characteristics suggestive of the presence of a Ce ³⁺ component in the chemical mechanical polishing slurry composition of the present invention, which distinguishes them from prior art abrasive particles. Specifically, the cerium oxide particles may be characterized in having two or more Raman peak spectra. This is different from conventional abrasives in which only Ce ⁴⁺ is present on the surface of the cerium oxide particles.

In one embodiment, the cerium oxide particles have a first Raman peak within a band range of 455 cm -1 to 460 cm -1 , a second Raman peak within a band range 587 cm -1 to 627 cm -1 , and 712 cm -1 . It may have a third Raman peak spectrum within a band range of 1 to 772 cm -1 .

In one embodiment, the ratio A/B of the first Raman peak intensity (A) to the second Raman peak intensity (B) may be characterized as 35 or less, preferably A/B is 30 or less, more preferably A/B may be 25 or less. Further, in one embodiment, the ratio A/C of the first Raman peak intensity (A) to the third Raman peak intensity (C) may be characterized as 65 or less, preferably A/C is 60 or less, more Preferably, A/C may be 50 or less. When the values of A/B and A/C satisfy the above ranges, the Ce ³⁺ /Ce ⁴⁺ molar ratio measured by the Raman peak spectrum may be 0.1 to 0.7, preferably 0.1 to 0.5.

In one embodiment, in an aqueous dispersion in which the content of the cerium oxide particles is adjusted to 1.0% by weight, light transmittance with respect to light having a wavelength of 450 to 800 nm may be 50% or more, preferably light transmittance is 70% or more, more preferably 90% or more. The light transmittance satisfying the above range may mean that the primary particle size of the cerium oxide particles according to an embodiment of the present invention is small, and aggregation into secondary particles is less than that of the conventional ceria particles. .

The chemical mechanical polishing slurry composition may have a pH of 7 or less, preferably 2 to 7, in terms of dispersion stability and polishing efficiency. More specifically, when the pH is less than 2, the removal rate of the silicon oxide film is rapidly lowered to exhibit undesirable polishing properties, and when the pH is greater than 7, undesirable polishing properties are exhibited, or the pH stability and dispersion stability are reduced, resulting in agglomeration, which can lead to micro-scratches and defects.

The chemical mechanical polishing slurry composition may include one or more acid or base pH adjusters and buffers capable of adjusting the pH in consideration of the final pH of the composition, the polishing rate, the polishing selectivity, and the like. As the pH adjusting agent for controlling the pH, one that can adjust the pH without affecting the properties of the chemical mechanical polishing slurry composition may be used. Examples of the acidic pH adjusting agent include inorganic acids such as sulfuric acid, hydrochloric acid, nitric acid and phosphoric acid, and organic acids such as acetic acid and citric acid. Examples of the basic pH adjuster include sodium hydroxide, potassium hydroxide, ammonium hydroxide, and quaternary organic ammonium salts. The content of the pH adjusting agent may be appropriately adjusted in consideration of the final pH of the composition.

Any solvent may be used as long as the solvent is used in the slurry composition for chemical mechanical polishing, for example, deionized water may be used, but the present invention is not limited thereto. Also, preferably ultrapure water can be used. The content of the solvent may be the remaining content excluding the content of the cerium oxide particles and other additional additives with respect to the entire slurry composition for chemical mechanical polishing.

The slurry composition may include an additive capable of improving polishing efficiency. In the process of polishing an object to be polished containing two or more different materials, the additive for improving polishing selectivity may act to selectively polish another material with respect to one material. As an example of the additive, it may further include a quaternary ammonium compound, a lubricant, and the like, if necessary. The quaternary ammonium compound may additionally impart a preservative function and a pH control function, and the amount used may be 0.01 to 10% by weight, preferably 0.1 to 5% by weight, based on the entire chemical mechanical polishing slurry composition. Examples of the quaternary ammonium compound include ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide or tetrabutylammonium hydroxide. The lubricant is intended to help the lubricating function of the chemical mechanical polishing slurry composition, and may be used in an amount of 0.01 to 10% by weight, preferably 0.1 to 5% by weight, based on the total amount of the chemical mechanical polishing slurry composition.

The chemical mechanical polishing slurry composition has excellent dispersion stability and polishing selectivity, and in particular, a high polishing rate for a silicon oxide film and a low polishing rate for a silicon nitride film. It can be effectively used to selectively remove the oxide film.

The slurry composition for chemical mechanical polishing may be provided in the form of a one-component slurry composition including all components such as cerium oxide particles, solvents and other additives, and if necessary, the components may be placed in two or three or more containers. It may be provided in the form of a two-component or three-component slurry composition that is stored separately and then mixed at or near the time of use. The selection of these forms of presentation and combination of storage components is well within the knowledge of those of ordinary skill in the art, and overall polishing properties and polishing rates can be adjusted by varying the mixing ratio.

Meanwhile, the method of manufacturing a semiconductor device according to another embodiment of the present invention includes simultaneously polishing a barrier metal layer, a silicon oxide layer, and a silicon nitride layer using the chemical mechanical polishing slurry composition. Through the polishing step, a through electrode may be formed. A method of simultaneously polishing a barrier metal film, a silicon oxide film, and a silicon nitride film using the chemical mechanical polishing slurry composition may be any conventionally generally used polishing method and conditions, and is not particularly limited in the present invention. Therefore, in the present specification, a detailed description thereof will be omitted.

Hereinafter, embodiments of the present invention will be described in detail so that those of ordinary skill in the art can easily carry out the present invention. However, the present invention may be embodied in several different forms and is not limited to the embodiments described herein.

Example 1. Preparation of CMP Slurry Compositions Containing Cerium Oxide Particles

A primary particle size of 1 to 5 nm and an average particle diameter of about 3 to 7 nm of equiaxed cerium oxide was prepared. The cerium oxide particles were prepared by growing the particles through chemical synthesis in a bottom-up manner. Methods such as sol-gel method, supercritical reaction, hydrothermal reaction, and co-precipitation can be used as a chemical synthesis method for cerium oxide particles, and ammonium-based additives for controlling the shape of cerium particles are included in all synthesis.

A CMP slurry was prepared by adding cerium oxide particles having a predetermined particle size according to the present invention to deionized water to adjust the abrasive concentration to 0.1 wt%, and adding Ammonia as a pH adjuster to adjust the final pH to 5.5.

Comparative Example A.

Conventional cerium oxide particles having an average particle size of 30 nm were added to deionized water to adjust the abrasive concentration to 0.05 wt%, and Ammonia was added as a pH adjuster to adjust the final pH to 5.5 to prepare a CMP slurry.

Comparative Example B.

Cerium oxide particles having an average particle size of 60 nm were prepared and added to deionized water to adjust the abrasive concentration to 0.05 wt%, and Ammonia was added as a pH adjuster to adjust the final pH to 5.5 to prepare a CMP slurry.

Experimental Example 1. XRD analysis of cerium oxide particles

Figure 2a shows the results of XRD analysis of the cerium oxide particles prepared at this time, in which cerium oxide was prepared several times according to an embodiment of the present invention. The cerium oxide particles according to the present invention were analyzed using X-ray diffraction analysis (XRD, Rigaku DMAX 2500, using Cu-Kα radiation having a wavelength of 0.154 nm at 40 kV, 100 mA).

All of the synthesized particles were confirmed to be pure cerium oxide in accordance with the standard JCPDS file (34-0394). As a result of measuring the grain size through the XRD pattern, it was confirmed that the particles had a size of 2.8 to 3.5 nm.

Figure 2b compares the XRD analysis results of the cerium oxide particles prepared according to the present invention and the general cerium hydroxide particles.

Experimental Example 2. Analysis using Raman spectroscopy

Figure 4a shows the Raman peak spectrum results of the conventional particle size 60nm ceria particles, Figure 4b shows the Raman peak spectrum results of the cerium oxide particles prepared according to an embodiment of the present invention, Figure 4c is The results of comparison of Raman peak spectra of ceria particles with a conventional particle size of 60 nm and cerium oxide particles prepared according to an embodiment of the present invention are shown.

Referring to FIG. 4a, in the case of the conventional slurry composition in which Ce3+ does not exist on the surface, only a Raman peak of 462cm ^-1 is shown, while referring to FIGS. 4b and 4c, in the cerium oxide particles of the present invention, 457, 607, 742cm It can be seen that each of the peaks of ^-1 is indicated. It can be confirmed that a shift has occurred from the peak (462cm ^-1 ) in the conventional ceria to 457 cm ^-1 , and it can be confirmed that 607cm ^-1 , 742 cm ^-1 peaks are generated according to the inclusion of a large amount of Ce ³⁺ .

In addition, in Tables 1 and 2 below, the Raman peak intensity of each of the cerium oxide particles of the present invention and the peak intensity ratio between 457cm ^-1 /607cm ^-1 and 457cm ^-1 /742cm ^-1 were shown.

the present invention at 457 cm ^-1
peak intensity at 607cm ^-1
peak intensity Peak intensity vs. at about 457 cm ^-1
Ratio of peak intensity at about 607 cm ^-1 No. One 70244.7 3538.5 19.9 No. 2 75219.0 4394.8 17.1 No. 3 92824.5 4575.5 20.3 No. 4 87916.7 5403.3 16.3

the present invention at 457 cm ^-1
peak intensity at 742 cm ^-1
peak intensity Peak intensity vs. at about 457 cm ^-1
Ratio of peak intensity at about 742 cm ^-1 No. One 70244.7 2861.75 24.54 No. 2 75219.0 1919.21 39.19 No. 3 92824.5 1981.58 46.84 No. 4 87916.7 3050.15 28.82

As shown in Tables 1 and 2, the ratio of 457 cm ^-1 peak intensity to 607 cm ^-1 peak intensity and the ratio of 457 cm ^-1 peak intensity to 607 cm ^-1 peak intensity are below a predetermined value, so that the Ce ³⁺ content It can be seen that this is about 30-45%.

Experimental Example 3. Particle size analysis using TEM/SEM

4A and 4B are TEM/SEM images of cerium oxide particles according to an embodiment of the present invention. The primary particle sizes of the cerium oxide particles according to Example 1 and Comparative Examples A and B were analyzed. 4c is a Malvern Zerasizer (DLS method) result of cerium oxide particles according to an embodiment of the present invention, showing the results of the size of the secondary particles.

4A and 4B, it can be seen that the average size of the cerium oxide particles according to an embodiment of the present invention is about 4 nm, and the size of the secondary particles is also about 10 nm (FIG. 4c). On the other hand, in the case of the conventional ceria particles of Comparative Examples A and B, it was shown that the overall particle size was 20 nm or more.

Experimental Example 4. Slurry light transmittance analysis

The conventional ceria particles of Comparative Example A (or B) and the cerium oxide particles according to an embodiment of the present invention were added to deionized water to adjust the abrasive concentration to 1.0 wt%, and a CMP slurry was prepared and light transmittance was analyzed.

The optical spectrum was measured using a UV-vis spectrophotometer (Jasco UV-vis spectrophotometer) in the range of 200-800 nm.

Figure 5a shows the light transmittance analysis results of the cerium oxide particles according to an embodiment of the present invention, Figure 6b shows the light transmittance analysis results according to the wavelength of the cerium oxide particles according to an embodiment of the present invention.

According to FIG. 5A, in the case of the slurry containing Comparative Example A, which is the conventional ceria particle, high turbidity was observed with the naked eye, whereas in the case of the slurry containing the cerium oxide particle of the present invention, it was transparent. It was found that the light transmittance was high.

Referring to FIG. 5B , it was confirmed that the light transmittance of the slurry according to the embodiment of the present invention at a wavelength in the visible ray region was 97.4% or more. This means that the primary particle size of the cerium oxide particles of the present invention is small, and the aggregation into secondary particles is less than that of the conventional ceria particles.

Experimental Example 5. Evaluation of polishing properties

Polishing was performed according to the following polishing machine and polishing conditions using the CMP slurry compositions prepared in Examples and Comparative Examples 1 and 2, and polishing of a silicon oxide film (a PETEOS silicon oxide film formed by plasma chemical vapor deposition) and a silicon nitride film The rate and the polishing rate of polysilicon were calculated, and the results are shown in Table 3 below.

Evaluation equipment: Reflexion® LK CMP (Applied Materials)

Wafer: 300mm PETEOS Wafer

PAD: IC1010 (DOW)

Polishing conditions: 2psi, Head: 65rpm, Platen: 67rpm, Flow rate: 200ml/min

Thin Film Measuring Equipment: ST5000 (K-Mac)

The slurry composition and polishing evaluation results are shown in Table 2 below.

Comparative Example A Comparative Example B Example cerium oxide 30nm nanoparticles on the market Commercial 60nm Nanoparticles particles of the invention ceria content 0.05% 0.05% 0.05% pH 5.5 5.5 5.5 PETEO Removal Rate 54 Å/min 546 Å/min 3,458 Å/min

Referring to Table 3, it can be seen that the Example of the present invention exhibits an excellent oxide film removal rate at a low content despite the small particle size.

The description of the present invention described above is for illustration, and those of ordinary skill in the art to which the present invention pertains can understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. For example, each component described as a single type may be implemented in a dispersed form, and likewise components described as distributed may also be implemented in a combined form.

The scope of the present invention is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention.

Claims (11)

cerium oxide particles; and
containing a solvent;
The cerium oxide particles have a primary particle size of 1 to 10 nm, and a secondary particle size of 2 or more and less than 20 nm,
In the aqueous dispersion in which the content of the cerium oxide particles is adjusted to 1.0% by weight, the average light transmittance is 50% or more with respect to light with a wavelength of 450 to 800 nm,
The surface of the cerium oxide particles contains Ce ³⁺ and Ce ⁴⁺ ,
30% or more of Ce ³⁺ on the surface of the cerium oxide particles,
The cerium oxide particles have a first Raman peak within a band range of 455 cm ⁻¹ to 460 cm ⁻¹ , a second Raman peak within a band range of 587 cm ⁻¹ to 627 cm ⁻¹ and 712 cm ⁻¹ to 772 cm ⁻ A slurry composition for chemical mechanical polishing, characterized in that it has a third Raman peak spectrum within a band range of ¹ .
delete According to claim 1,
The ratio A/B of the first Raman peak intensity (A) to the second Raman peak intensity (B) is 25 or less, the slurry composition for chemical mechanical polishing.
According to claim 1,
The ratio A/C of the first Raman peak intensity (A) to the third Raman peak intensity (C) is 50 or less, the slurry composition for chemical mechanical polishing.
delete According to claim 1,
The average primary particle size of the cerium oxide particles is 1 to 10nm, characterized in that the chemical mechanical polishing slurry composition.
According to claim 1,
A slurry composition for chemical mechanical polishing, characterized in that the average light transmittance with respect to light having a wavelength of 800 nm in an aqueous dispersion in which the content of the cerium oxide particles is adjusted to 1.0% by weight is 90% or more.
According to claim 1,
The cerium oxide particles are included in an amount of 0.01 to 5 parts by weight based on 100 parts by weight of the total composition, a slurry composition for chemical mechanical polishing.
According to claim 1,
A slurry composition for chemical mechanical polishing, characterized in that the pH of the composition is 2 to 7.
According to claim 1,
The solvent is a slurry composition for chemical mechanical polishing, characterized in that deionized water.
11. A method of manufacturing a semiconductor device comprising the step of polishing using the chemical mechanical polishing slurry composition according to any one of claims 1, 3, 4, and 6 to 10.

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