CN103943491B - The method that substrate surface is planarized by CMP is used in keyset technique - Google Patents
The method that substrate surface is planarized by CMP is used in keyset technique Download PDFInfo
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- CN103943491B CN103943491B CN201410173271.7A CN201410173271A CN103943491B CN 103943491 B CN103943491 B CN 103943491B CN 201410173271 A CN201410173271 A CN 201410173271A CN 103943491 B CN103943491 B CN 103943491B
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- grinding
- cmp
- polymer
- keyset
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
- H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
Abstract
The invention provides a kind of method utilizing CMP that substrate surface is planarized in keyset technique using polymeric substrates or the other materials substrate that is covered with polymer.The imidization degree of polymer is closely related with CMP grinding rate, in order to obtain higher grinding rate, to polymeric substrates or be covered with the other materials substrate of polymer and carry out specific cured.Described polymer is polyimides or phenylpropyl alcohol dibutene, and the surface uniformity processed through CMP can reach < 1%: use 2 ~ 3 step grinding rates CMP from high to low, and be carried out after grinding.The present invention utilizes and is covered with polymer on cheap material or directly uses polymeric substrates as keyset substrate, compared to traditional silicon substrate, cost can be substantially reduced, surface uniformity is the most excellent, to subsequent etching, CVD, PVD, Lithography technique is got ready, and develops for 3D is integrated provide possibility to high density high accuracy direction.
Description
Technical field
The present invention relates to a kind of method using CMP that the substrate surface before deep hole etching is planarized in keyset technique, belong to technical field of manufacturing semiconductors.
Background technology
Using the Technology relative maturity of silicon (Si) keyset, surface uniformity is good, but cost is high.With in the polymer (such as polyimides polyimide or benzocyclobutene BCB) keyset (interposer) technique as substrate, polymeric substrates surface uniformity (uniformity) is about +/-10%, i.e. thickness be the amounts of thickness variation (TTV) of substrate surface of 40um be 4um, bad surface uniformity can be to subsequent etching, and PVD and plating have undesirable effect.The most common method is to utilize CVD at substrate surface cvd silicon oxide as insulating barrier, but this process costs is higher, and technological process is complicated.It addition, use polyimides spin coating proceeding, spin coating proceeding itself can carry out coarse planarization to surface, but its degree of planarization is the lowest, the most still remains original pattern of substrate surface, and surface uniformity does not reaches superintegrated requirement.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, there is provided the method using cmp CMP that substrate surface that deep hole etching (Via) is front is planarized in the keyset technique of the substrate that a kind of polymeric substrates or surface be covered with polymer, to obtain preferable surface uniformity.
The technical scheme provided according to the present invention, the described method using CMP that substrate surface is planarized in keyset technique, comprise the following steps:
(1) providing polymeric substrates or surface to be covered with the substrate of polymer, on substrate, the thickness of polymer increases by 10% ~ 15% as CMP grind on the basis of technological requirement；Described polymer is polyimides or benzocyclobutene；
(2) aforesaid substrate is carried out cured, make polymer surfaces contact angle less than 70 degree；
(3) use CMP that surface is carried out planarization process before deep hole etches, reach the planarization requirement that surface uniformity is 1%；It is specially employing 2 ~ 3 step grinding rate CMP from high to low to grind, and is carried out after grinding processing；Select following consumptive material:
A () colloidal grinding liquid, wherein abrasive grains includes silicon oxide, cerium oxide, or aluminium oxide；Abrasive grains magnitude range is 5 ~ 160nm;In lapping liquid, the content of abrasive grains is in the range of 0.01wt% ~ 20wt%；PH should be greater than 7；Lapping liquid includes viscosity stabilization material (such as glycerol) between 18 mPa s ~ 300 mPa s within the temperature range of 20 ~ 80 C；
B () activated polymer surface, accelerates the additive of polymer hydrolysis, including: deionized water, potassium hydroxide, or Tetramethylammonium hydroxide；
(c) hardness abrasive hardcoat pad between 50 shore D and 60 shore D and the hardness flexible abrasive pad less than 50 shore D with the use of.
Wherein the method for processing substrate is by step (2): toast 30 ~ 60 minutes under the conditions of 125 ~ 250 degree celsius temperature.
The technical process that step (3) carries out two steps CMP grindings is as follows:
(3.1) high pressure (3psi ~ 4psi) is used at the first grinding table, high rotating speed (100rpm ~ 130rpm), lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate more than 1um/min to irregular substrate surface with this understanding and grinds roughly；
(3.2) pressure 0.2psi ~ 2psi, rotating speed 40 ~ 70rpm is used to carry out second step CMP grinding technics with the grinding rate less than 1um/min on flexible abrasive pad at the second grinding table.
The technical process that step (3) carries out three steps CMP grindings is as follows:
(3.1) higher grinding head pressure (3psi ~ 4psi) is used at the first grinding table, high rotating speed (100rpm ~ 130rpm), lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate more than 1um/min to irregular substrate surface with this understanding and grinds roughly；
(3.2) use the grinding head pressure of 2psi ~ 3psi, the process conditions of high rotating speed (100rpm ~ 130rpm) lapping liquid flow 150ml/min ~ 300ml/min at the second grinding table, carry out second step fine grinding with grinding low grinding rate than the first step；
(3.3) pressure 0.2psi ~ 2psi, rotating speed 40 ~ 70rpm is used to carry out the 3rd step CMP grinding technics on flexible abrasive pad at the 3rd grinding table.
Further, the microvoid polyurethane material density used by step (5) described grinding pad is 0.13 ~ 1.6g/cm3。
The invention have the advantage that
One, in keyset technique, utilize polymer (such as polyimide or BCB) to replace silicon (Si) and can be substantially reduced as substrate, cost；
Two, utilize CMP to polymeric substrates or to be covered with the other materials substrate of polymer and carry out planarization and process and can obtain < the surface uniformity of 1%；
Three, the imidization degree of polymer can be largely affected by CMP grinding rate, therefore can be by adjusting polymeric material, and curing process, temperature and time increases CMP grinding rate, reduces cost.
Detailed description of the invention
Below in conjunction with embodiment, the invention will be further described.The present invention specifically includes following steps:
1) covering polymer (such as Polyimide or BCB) on polymeric substrates or other material (such as glass, pottery etc.) substrate, its detailed process includes spin coating, spraying etc..The thickness of polymer should increase by 10% ~ 15% as CMP grind on the basis of technological requirement.As: technological requirement substrate thickness is 40um, then the actual spin coating thickness of polymer should be from about 45um, 5um thickness as CMP grind.
2) before CMP, to polymeric substrates or be covered with the other materials substrate of polymer and carry out cured.About 30min ~ 60min is toasted under the conditions of 150 ~ 250 degree celsius temperature.Make polymer surfaces contact angle less than 70 degree, in order to polymer has hydrolysis rate faster under CMP lapping liquid effect, maintains higher grinding rate.
3) using the method for cmp (CMP) that substrate surface is carried out planarization process, reaching surface uniformity is the < planarization requirement of 1%.
Select following consumptive material:
A () colloidal grinding liquid (colloidal slurry), including silica abrasive liquid, cerium oxide abrasive liquid, or alumina lap liquid, the abrasive grains magnitude range in lapping liquid is 5 ~ 160nm;In lapping liquid, the content of abrasive grains is in the range of 0.01wt% ~ 20wt%；The pattern of abrasive grains (Abrasive) also includes the different morphologies such as circle, pointed shape；In lapping liquid should containing under 20 ~ 80 degree of process environments viscosity stabilized (>18 mPa s and<300 mPa s) material (such as: glycerol).
B () can increase the additive (such as: deionized water DIW, potassium hydroxide KOH, Tetramethylammonium hydroxide THAM) of Polymer surfactants, in factory service feed end adds lapping liquid.
(c) grinding pad (Pad): abrasive hardcoat pad and two kinds of flexible abrasive pad.Including various surface groove pattern (groove pattern) and the degree of depth (groove depth).Described abrasive hardcoat pad hardness (Pad hardness) should be between 50 shore D and 60 shore D, flexible abrasive pad hardness < 50 shore D.Microvoid polyurethane material (microcellular used by grinding pad
Polyurethane) density should be 0.13 ~ 1.6g/cm3。
Technical process is as follows:
(1) 2 ~ 3 step CMP grinding technics are used.Wherein the first step and second step can once complete, but in view of production efficiency (throughput) and surface smoothness, three step grinding technics more advantages.
(a) rough polishing.Use high grinding rate (> 1um/min at the first grinding table) technique polymeric substrates surface carried out the first step grind roughly；
B () half essence is thrown.At the second grinding table relatively low grinding rate (>0.5um/min of employing, and<1um/min) the polymeric substrates surface after corase grind is carried out second step fine gtinding；
C () essence is thrown.Use the grinding rate lower than second step to carry out the 3rd step on flexible abrasive pad (politex pad) at the 3rd grinding table to grind.
(2) cleaning treatment after grinding.
A () utilizes ultra-pure water (DIW) and ultrasound wave (Megasonic) vibrations to remove the granule that surface is bigger.
B () is at chemical reagent (such as: CX-100, Japan Wako Pure Chemical Industries, Ltd. Wako Pure Chemical
Industries, Ltd.) in utilize soft brushing away except being attached on the granule on surface.
C () utilizes isopropanol (IPA) and mechanical force to be dried polymeric substrates surface.
The present invention is to polymeric substrates (such as polyimide or BCB) or is covered with the other materials substrate of polymer and carries out cmp (CMP), obtain preferable surface uniformity (< 1%, i.e. thickness is that the substrate surface amounts of thickness variation of 10um is only 0.1um) so that the integrated reliability of the less live width of more high density increases.
Claims (6)
1. the method using CMP to planarize substrate surface in keyset technique, is characterized in that, comprise the following steps:
(1) providing polymeric substrates or surface to be covered with the substrate of polymer, on substrate, the thickness of polymer increases by 10% ~ 15% as CMP grind on the basis of technological requirement；Described polymer is polyimides or benzocyclobutene；
(2) aforesaid substrate is carried out cured, make polymer surfaces contact angle less than 70 degree；
(3) use CMP that surface is carried out planarization process before deep hole etches, reach the planarization requirement that surface uniformity is 1%；It is specially employing 2 ~ 3 step grinding rate CMP from high to low to grind, and is carried out after grinding processing；Select following consumptive material:
A () colloidal grinding liquid, wherein abrasive grains includes silicon oxide, cerium oxide, or aluminium oxide；Abrasive grains magnitude range is 5 ~ 160nm;In lapping liquid, the content of abrasive grains is in the range of 0.01wt% ~ 20wt%；PH should be greater than 7；Lapping liquid include 20 ~ 80 C within the temperature range of viscosity stabilization at 18 mPa s
Material between ~ 300 mPa s；
B () activated polymer surface, accelerates the additive of polymer hydrolysis, including: deionized water, potassium hydroxide, or Tetramethylammonium hydroxide；
(c) hardness abrasive hardcoat pad between 50 shore D and 60 shore D and the hardness flexible abrasive pad less than 50 shore D with the use of.
2. the method using CMP to planarize substrate surface as claimed in claim 1 in keyset technique, is characterized in that, the method for processing substrate is by step (2): toast 30 ~ 60 minutes under the conditions of 125 ~ 250 degree celsius temperature.
3. the method using CMP to planarize substrate surface as claimed in claim 1 in keyset technique, is characterized in that, use 2 step grinding rates CMP grinding technics process from high to low as follows in step (3):
(3.1)
Using pressure 3psi ~ 4psi, rotating speed 100rpm ~ 130rpm at the first grinding table, lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate more than 1um/min to irregular substrate surface with this understanding and grinds roughly；
(3.2)
Pressure 0.2psi ~ 2psi, rotating speed 40 ~ 70rpm is used to carry out second step CMP grinding technics with the grinding rate less than 1um/min on flexible abrasive pad at the second grinding table.
4. the method using CMP to planarize substrate surface as claimed in claim 1 in keyset technique, is characterized in that, use 3 step grinding rates CMP grinding technics process from high to low as follows in step (3):
(3.1)
Using grinding head pressure 3psi ~ 4psi, rotating speed 100rpm ~ 130rpm at the first grinding table, lapping liquid flow, between 150ml/min ~ 300ml/min, carries out the first step with the grinding rate more than 1um/min to irregular substrate surface with this understanding and grinds roughly；
(3.2)
Use the grinding head pressure of 2psi ~ 3psi, rotating speed 100rpm ~ 130rpm, the process conditions of lapping liquid flow 150ml/min ~ 300ml/min at the second grinding table, carry out second step fine grinding with grinding low grinding rate than the first step；
(3.3)
Pressure 0.2psi ~ 2psi, rotating speed 40 ~ 70rpm is used to carry out the 3rd step CMP grinding technics on flexible abrasive pad at the 3rd grinding table.
5. the method using CMP to planarize substrate surface as claimed in claim 1 in keyset technique, is characterized in that, the microvoid polyurethane material density used by step (3) described grinding pad is 0.13 ~ 1.6g/cm3。
6. using, such as claim 1, the method that substrate surface planarizes by CMP in keyset technique, it is characterized in that, in step (3) described lapping liquid, contained viscosity stabilized material is glycerol.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410173271.7A CN103943491B (en) | 2014-04-28 | 2014-04-28 | The method that substrate surface is planarized by CMP is used in keyset technique |
| US14/689,067 US9589786B2 (en) | 2014-04-28 | 2015-04-17 | Method for polishing a polymer surface |
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| CN201410173271.7A CN103943491B (en) | 2014-04-28 | 2014-04-28 | The method that substrate surface is planarized by CMP is used in keyset technique |
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| CN103943491A CN103943491A (en) | 2014-07-23 |
| CN103943491B true CN103943491B (en) | 2016-08-24 |
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| CN104157551B (en) * | 2014-07-31 | 2017-01-25 | 华进半导体封装先导技术研发中心有限公司 | Substrate surface pretreatment method prior to bonding |
| CN106672892A (en) * | 2016-12-21 | 2017-05-17 | 中国电子科技集团公司第五十五研究所 | Method for reducing depressed deformation of sacrificial layer in three-dimensional stacking in chemical mechanical polishing |
| US10636673B2 (en) * | 2017-09-28 | 2020-04-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor device structure |
| CN109346419B (en) * | 2018-12-05 | 2020-11-06 | 德淮半导体有限公司 | Semiconductor device and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1253160A (en) * | 1998-11-09 | 2000-05-17 | 科莱恩(法国)公司 | New type abrasive composition used in integrated circuit electronic industry |
| US6383933B1 (en) * | 2000-03-23 | 2002-05-07 | National Semiconductor Corporation | Method of using organic material to enhance STI planarization or other planarization processes |
| CN1387249A (en) * | 2001-05-22 | 2002-12-25 | 华邦电子股份有限公司 | Grinding-flatening method for IC |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1253160A (en) * | 1998-11-09 | 2000-05-17 | 科莱恩(法国)公司 | New type abrasive composition used in integrated circuit electronic industry |
| US6383933B1 (en) * | 2000-03-23 | 2002-05-07 | National Semiconductor Corporation | Method of using organic material to enhance STI planarization or other planarization processes |
| CN1387249A (en) * | 2001-05-22 | 2002-12-25 | 华邦电子股份有限公司 | Grinding-flatening method for IC |
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