CN112846948B - Wafer surface processing method - Google Patents
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- CN112846948B CN112846948B CN201911188515.8A CN201911188515A CN112846948B CN 112846948 B CN112846948 B CN 112846948B CN 201911188515 A CN201911188515 A CN 201911188515A CN 112846948 B CN112846948 B CN 112846948B
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- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 238000000227 grinding Methods 0.000 claims abstract description 276
- 239000007788 liquid Substances 0.000 claims abstract description 108
- 239000002245 particle Substances 0.000 claims abstract description 70
- 239000010432 diamond Substances 0.000 claims abstract description 33
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 33
- 239000000843 powder Substances 0.000 claims abstract description 33
- 230000001681 protective effect Effects 0.000 claims abstract description 22
- 239000000853 adhesive Substances 0.000 claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 239000003292 glue Substances 0.000 claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims description 30
- 229910021641 deionized water Inorganic materials 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 25
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 114
- 238000005498 polishing Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000001035 drying Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a processing method of a wafer surface, which comprises the following steps: (1) coating a protective adhesive on the front surface of the wafer; (2) Carrying out primary grinding on the back of a wafer, wherein 8-10 nm diamond powder is dispersed in the grinding liquid to serve as grinding particles, and the pH value of the grinding liquid is 9-12; (3) Carrying out secondary grinding on the back of the wafer, wherein 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 9-12, (4) removing the protective glue on the front of the wafer, carrying out tertiary grinding on the front of the wafer, wherein 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, and the pH value of the grinding liquid is 9-12. According to the processing method of the wafer surface, the back of the wafer is ground twice, the pH value of the grinding liquid and the particle size of the grinding particles are controlled, and the prepared wafer surface is free of corrosion, flat and smooth in surface and free of scratches.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, and particularly relates to a processing method of a wafer surface.
Background
With the rapid development of very large scale integrated circuits, the manufacturing process of integrated circuits has become more and more complex and finer, in order to increase the integration level, reduce the manufacturing cost, and reduce the size of semiconductor devices, it has become difficult for planar wiring to meet the requirement of high density distribution of semiconductor devices, and the use of multilayer wiring technology to increase the integration density of semiconductor devices has become one of the trends, wherein the chemical mechanical polishing (CMP, chemical Mechanical Polishing) technology is one of the important process steps in the semiconductor manufacturing process.
The apparatus used in chemical mechanical polishing mainly includes a polishing head (head) and a polishing table (pad) on which a polishing pad (pad) is disposed. In the chemical mechanical polishing process, a polishing liquid (slurry) and polishing particles are required to be added, and the polishing of the wafer to be polished is realized along with the relative motion between the polishing pad and the wafer to be polished, so that a flat surface is formed. Since the material and structure of the wafer are metal layers of nickel, iron, copper and the like in the silicon dioxide matrix, the metal layers are subjected to polishing treatment by grinding, but the materials of the silicon dioxide matrix and the metal layers are different, uneven surfaces can be caused by inconsistent grinding degrees of the silicon dioxide matrix and the metal layers due to improper grinding liquid (slurry) and grinding particles in the grinding process, and corrosion of the metal layers can be caused.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a processing method of a wafer surface.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: a method of processing a wafer surface, the method comprising the steps of:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is an alkali solution, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid to serve as grinding particles, the pH value of the grinding liquid is 9-12, and the wafer is cleaned after the first grinding;
(3) Carrying out secondary grinding on the back of the wafer, wherein grinding liquid of the secondary grinding is alkali solution, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid to serve as grinding particles, the pH value of the grinding liquid is 9-12, and the wafer is cleaned after the secondary grinding;
(4) And removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is an alkali solution, 3-5 nm diamond powder is dispersed in the grinding liquid to serve as grinding particles, the pH value of the grinding liquid is 9-12, and the wafer is cleaned after the third grinding.
According to the processing method of the wafer surface, the back of the wafer is ground twice, the pH value of the grinding liquid and the particle size of the grinding particles are controlled, and the prepared wafer surface is free of corrosion, flat and smooth and free of scratches.
Preferably, the alkaline solution is ammonia or sodium hydroxide solution.
Preferably, in the step (2), the pH of the polishing liquid for the first polishing is 10 to 12.
The inventor finds that when the pH value of the grinding liquid for the first grinding is 10-12, the metal layer is not corroded in the grinding process, and the prepared wafer has a flat and smooth surface and no scratches.
Preferably, in the step (3), the pH of the polishing liquid of the second polishing is 10 to 12.
The inventor finds that when the pH value of the grinding liquid for the second grinding is 10-12, no corrosion is generated on the metal layer in the grinding process, and the prepared wafer has a flat and smooth surface and no scratch.
Preferably, in the step (4), the pH of the polishing liquid for the third polishing is 10 to 12.
The inventor finds that when the pH value of the grinding liquid for the third grinding is 10-12, no corrosion is generated on the metal layer in the grinding process, and the prepared wafer has a flat and smooth surface and no scratch.
Preferably, in the step (2), the time of the first grinding is 12 to 18 minutes.
Preferably, in the step (2), the time of the first grinding is 15 minutes.
Preferably, in the step (4), the time of the third grinding is 2 to 3 minutes.
The inventors have found that the time for the third grinding is 2 to 3 minutes, which can make the silicon dioxide matrix and the metal layer on the surface of the wafer more flush.
Preferably, the wafer is ultrasonically cleaned with deionized water for 15-20 minutes after the first grinding, the wafer is ultrasonically cleaned with deionized water for 15-20 minutes after the second grinding, and the wafer is ultrasonically cleaned with deionized water for 15-20 minutes after the third grinding.
Preferably, the wafer is dried after the ultrasonic cleaning.
The invention has the beneficial effects that: the invention provides a processing method of a wafer surface, which is characterized in that the back of the wafer is ground twice, the pH value of grinding liquid and the particle size of grinding particles are controlled, and the prepared wafer surface is free from corrosion, flat and smooth and free from scratches.
Detailed Description
For a better description of the objects, technical solutions and advantages of the present invention, the present invention will be further described with reference to the following specific examples.
Example 1
As a processing method of a wafer surface in an embodiment of the invention, the method comprises the following steps:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Example 2
As a processing method of a wafer surface in an embodiment of the invention, the method comprises the following steps:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 12, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 12, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 12, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Example 3
As a processing method of a wafer surface in an embodiment of the invention, the method comprises the following steps:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 9, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 9, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 9, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Comparative example 1
A method for processing a wafer surface as a comparative example of the present invention, the method comprising the steps of:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 7, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 7, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 7, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Comparative example 2
A method for processing a wafer surface as a comparative example of the present invention, the method comprising the steps of:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 8, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 8, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 8, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Comparative example 3
A method for processing a wafer surface as a comparative example of the present invention, the method comprising the steps of:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 12-15 nm is dispersed in the grinding liquid to serve as grinding particles, the pH value of the grinding liquid is 10, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Comparative example 4
A method for processing a wafer surface as a comparative example of the present invention, the method comprising the steps of:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid to serve as grinding particles, the pH value of the grinding liquid is 10, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Comparative example 5
A method for processing a wafer surface as a comparative example of the present invention, the method comprising the steps of:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is ammonia water, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, the time for the first grinding is 15 minutes, and after the first grinding, the wafer is ultrasonically cleaned by deionized water for 15 minutes and dried;
(3) Carrying out secondary grinding on the back of the wafer, wherein the grinding liquid for the secondary grinding is ammonia water, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, and carrying out ultrasonic cleaning on the wafer for 15 minutes by deionized water after the secondary grinding, and drying;
(4) Removing the protective adhesive on the front surface of the wafer, and carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is ammonia water, 3-5 nm diamond powder is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10, the time for the third grinding is 2-3 minutes, and the wafer is ultrasonically cleaned for 15 minutes by deionized water after the third grinding and is dried.
Effect example 1
The wafers were processed by the processing methods for the wafer surfaces of examples 1 to 3 and comparative examples 1 to 5, and the results are shown in table 1.
Table 1 method for processing wafer surface conditions after processing wafer
By comparing examples 1 to 3, comparative examples 1 to 2 found that the wafer surface processing method processed the wafer surface without corrosion, the surface was flat and smooth and without scratches when the pH of the polishing liquid was 10 to 12, but the wafer surface corrosion was severe when the pH was 7 to 8, and the processed wafer quality was low.
As is found from comparative examples 1 and 3 to 5, the first abrasive particles of the comparative examples have a particle diameter of 12 to 15nm, which causes damage to the metal layer of the wafer; when the particle size of the first grinding particles is 3-5 nm, the grinding effect on the silicon dioxide matrix on the surface of the wafer cannot be achieved, the metal layer is sunken, and the surface is concave-convex; when the particle size of the second grinding particles is 8-10 nm, although the grinding effect can be achieved on the silicon dioxide matrix on the surface of the wafer, the metal layer can be sunk, the surface is concave-convex, the fact that the back of the wafer needs to be ground twice is indicated, and the wafer with the smooth and scratch-free surface can be obtained by precisely controlling the particle size of the grinding particles.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (4)
1. A method of processing a wafer surface, the method comprising the steps of:
(1) Coating protective glue on the front surface of the wafer;
(2) Carrying out first grinding on the back of a wafer, wherein the grinding liquid for the first grinding is an alkali solution, diamond powder with the particle size of 8-10 nm is dispersed in the grinding liquid to serve as grinding particles, the pH value of the grinding liquid is 10-12, and the wafer is cleaned after the first grinding;
(3) Carrying out secondary grinding on the back of the wafer, wherein grinding liquid for the secondary grinding is alkali solution, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid to serve as grinding particles, the pH value of the grinding liquid is 10-12, and the wafer is cleaned after the secondary grinding;
(4) Removing the protective adhesive on the front surface of the wafer, carrying out third grinding on the front surface of the wafer, wherein the grinding liquid for the third grinding is alkali solution, diamond powder with the particle size of 3-5 nm is dispersed in the grinding liquid as grinding particles, the pH value of the grinding liquid is 10-12, cleaning the wafer after the third grinding,
wherein the alkali solution is ammonia water or sodium hydroxide solution,
in the step (2), the time of the first grinding is 12-18 minutes,
in the step (4), the time of the third grinding is 2-3 minutes.
2. The process of claim 1, wherein in step (2), the first grinding is performed for 15 minutes.
3. The process of claim 1 wherein the wafer is ultrasonically cleaned with deionized water for 15-20 minutes after the first grinding, with deionized water for 15-20 minutes after the second grinding, and with deionized water for 15-20 minutes after the third grinding.
4. A processing method according to claim 3, wherein the wafer is dried after the ultrasonic cleaning.
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| CN1469459A (en) * | 2003-04-30 | 2004-01-21 | 东莞市福地电子材料有限公司 | Processing method of nano level saphire substrate and its special polishing liquid |
| CN101367192A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Wafer reverse side grinding method |
| CN101399164A (en) * | 2007-09-26 | 2009-04-01 | 北京有色金属研究总院 | Semi-insulation gallium arsenide wafer double face finishing method |
| CN101927455A (en) * | 2009-06-24 | 2010-12-29 | 硅电子股份公司 | The method of polishing pad and polishing of semiconductor wafers |
| TW201111488A (en) * | 2009-07-07 | 2011-04-01 | Kao Corp | Polishing liquid composition for silicon wafers |
| CN102214555A (en) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | Method for thinning sapphire wafer |
| CN105742173A (en) * | 2016-03-02 | 2016-07-06 | 上海朕芯微电子科技有限公司 | Processing method for ultra-thin wafer |
| CN106625204A (en) * | 2017-01-06 | 2017-05-10 | 东莞市天域半导体科技有限公司 | Back surface processing method for large-size SiC wafer |
| CN109037033A (en) * | 2018-07-17 | 2018-12-18 | 武汉新芯集成电路制造有限公司 | A kind of wafer thining method |
| CN109352513A (en) * | 2018-12-13 | 2019-02-19 | 上海超硅半导体有限公司 | A kind of polishing wafer method |
| CN110364430A (en) * | 2019-07-29 | 2019-10-22 | 武汉新芯集成电路制造有限公司 | A kind of thining method and crystal circle structure of wafer |
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