CN111500258A

CN111500258A - Abrasive fine particles, method for producing same, and abrasive

Info

Publication number: CN111500258A
Application number: CN202010240378.4A
Authority: CN
Inventors: 杨鹏; 高峰; 杨剑
Original assignee: Yangtze Memory Technologies Co Ltd
Current assignee: Yangtze Memory Technologies Co Ltd
Priority date: 2020-03-31
Filing date: 2020-03-31
Publication date: 2020-08-07

Abstract

Disclosed are an abrasive particle and a method for manufacturing the same, the abrasive particle including: the core is an elastic core body with a spherical structure and can elastically deform under the action of pressure; the core-shell structure comprises a first core shell wrapping the core, wherein the first core shell is a grinding layer and is used for grinding a target material, and the first core shell has a mesoporous structure. The grinding particles provided by the invention are of a microsphere structure consisting of a porous carbon core and a first core-shell of cerium oxide, and the porous carbon core can be elastically deformed under pressure, so that the risk of scratching the surface of a semiconductor caused by the irregular surface of the grinding particles can be reduced.

Description

Abrasive fine particles, method for producing same, and abrasive

Technical Field

The present invention relates to the field of semiconductor chemical mechanical polishing technology, and more particularly to abrasive particles for semiconductors, which can reduce the risk of scratching the surface of a target material, a method for producing the same, and an abrasive.

Background

With the improvement of the integration level of the chip, the line width of the chip is continuously reduced, and the requirement on the planarization quality of the surface of the semiconductor silicon wafer is higher and higher. In order to make the surface of a semiconductor silicon wafer more flat, polishing methods such as Chemical Mechanical Polishing (CMP) are widely used in semiconductor chip manufacturing. In the chemical mechanical polishing method, the profile of the surface relief of the chip is entirely planarized by using chemical reaction and mechanical polishing. The technique is applied to the planarization of aluminum alloy, copper, tungsten, silicon oxide and silicon layers. In the chemical mechanical polishing method, the physical/chemical characteristics of abrasive particles in an abrasive are key factors affecting surface roughness and surface defects. The traditional grinding agent adopts silicon oxide microspheres as grinding particles, however, the silicon oxide microspheres have higher hardness, so that the surface of a semiconductor is easily scratched in a friction process.

In order to improve the scratching condition of the surface of a semiconductor material, the mesoporous monodisperse microsphere chip grinding agent is invented. In this abrasive, the abrasive particles are silica microspheres having a mesoporous structure. The silicon oxide microspheres with the mesoporous structure can relieve the scratch problem of the surface of a semiconductor to a certain extent. However, the mesoporous monodisperse microspheres can generate fragments after being broken, and the broken mesoporous monodisperse microspheres can still scratch the surface of the semiconductor.

The cerium oxide particles doped in the polishing slurry are greatly improved in polishing effect, but there are still problems that the cerium oxide polishing particles have a large specific gravity and are easily precipitated, and if an excessive amount of additive is added, aggregation and precipitation are promoted to cause increase of polishing scratches, and the cerium oxide polishing particles have irregular shapes and are inferior in sphericity to silicon oxide, and corners of the surface are easily defective on the surface of a chip during polishing, which is also an important cause of generation of polishing scratches. This drawback will be more pronounced as chip fabrication moves to smaller sizes.

In view of the foregoing, it is desirable to provide an abrasive that can better reduce the risk of scratching the surface of a semiconductor material.

Disclosure of Invention

In view of the above problems, it is an object of the present invention to provide an abrasive particle using porous carbon-mesoporous ceria microspheres as the abrasive particle, wherein the porous carbon is used as a core and the mesoporous ceria is used as a core-shell structure, which can effectively reduce the edge angle of the surface when ceria is used as the abrasive particle, thereby reducing scratches of the surface of the chip by the abrasive particle during polishing, and a method for manufacturing the same.

According to an aspect of the present invention, there is provided an abrasive particle comprising: the core is an elastic core body with a spherical structure and can elastically deform under the action of pressure; the core-shell structure comprises a first core shell wrapping the core, wherein the first core shell is a grinding layer and is used for grinding a target material, and the first core shell has a mesoporous structure.

Preferably, a second core shell is further included between the core and the first core shell.

Preferably, the second core shell serves as a transition layer between the elastic core body and the grinding layer, and is used for improving the toughness of the grinding particles.

Preferably, the core and the second core shell are formed of a high molecular polymer.

Preferably, the core is made of porous carbon, and the first core-shell is made of cerium oxide.

Preferably, the porous carbon of the core material is prepared by calcining polystyrene microspheres.

Preferably, the range of mass ratio of the core to the first core shell includes 1: 9 to 9: 1.

according to another aspect of the present invention, there is provided a method for producing an abrasive particle, comprising: forming a core microsphere of an abrasive particle; dispersing the core microspheres in an organic solvent and heating to a first temperature; adding a cationic surfactant and refluxing at a first temperature for a first length of time; adding an abrasive source to form a reaction mixed solution, and reacting at a second temperature for a second time to obtain a first product; and reacting the first product at a third temperature for a third time to obtain the grinding particles, wherein the grinding material source is used for forming a first core shell for grinding the target material, and the first core shell has a mesoporous structure.

Preferably, between the steps of forming the core microspheres of the abrasive particles and dispersing the core microspheres in an organic solvent and heating to a first temperature, further comprising: and forming a second core-shell on the obtained surface of the core microsphere.

Preferably, the second core shell is used as a transition layer between the core microsphere and the first core shell, and is used for improving the toughness of the abrasive particles.

Preferably, the core microsphere and the second core shell are composed of a high molecular polymer.

Preferably, the core microspheres are polystyrene microspheres.

Preferably, the core material of the grinding particles is porous carbon, and the core is prepared by reacting polystyrene microspheres.

preferably, the organic solvent includes one or more of ethanol, methanol, toluene, acetone, or isopropyl alcohol, etc.

Preferably, the cationic surfactant is added, and simultaneously, the method further comprises the following steps: adding alkaline pH value regulating liquid.

Preferably, the material of the abrasive source is cerium isopropoxide, which is hydrolyzed in the organic solvent to form oligomeric cerium oxide nanoparticles.

According to still another aspect of the present invention, there is provided an abrasive comprising an additive, an abrasive base liquid and the aforementioned abrasive fine particles, or the abrasive fine particles produced by the aforementioned production method.

According to the grinding particle provided by the invention, the porous carbon is used as a core, and the mesoporous cerium oxide is used as a microsphere structure formed by the first core shell, so that the edge angle of the surface when the cerium oxide is used as the grinding particle can be effectively reduced, and the scratch of the grinding particle on the surface of a chip in the grinding process is reduced.

According to the grinding particle provided by the invention, the cerium oxide particles are only used for forming the mesoporous core shell on the surface of the microsphere structure, so that the content of the cerium oxide particles can be reduced, and the cost is further reduced.

According to the grinding particle provided by the invention, the first core-shell on the surface layer is the cerium oxide with the mesoporous structure, and the grinding particle is not easy to crack in the grinding process due to the good toughness of the mesoporous structure, so that the effect of chemical mechanical grinding can be improved.

In a preferred embodiment, a second core shell is further formed between the core of the abrasive particle and the first core shell, the second core shell adopts a high molecular polymer material, has certain elasticity, and is used as a transition layer between the core and the first core shell, so that the toughness of the abrasive particle can be further improved, the breakage probability of the abrasive particle can be reduced, and the effect of chemical mechanical polishing can be further improved.

Drawings

The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

FIG. 1 shows a prior art lapping mechanism;

FIG. 2 shows a scanning electron microscope of cerium oxide particles of the prior art;

FIG. 3 shows a schematic of cerium oxide particles in a prior art abrasive;

FIG. 4 is a schematic view of an abrasive particle according to a first embodiment of the present invention;

FIG. 5 is a flow chart illustrating a method of manufacturing abrasive particles according to a first embodiment of the present invention;

FIGS. 6a to 6e are schematic diagrams illustrating stages in a method for manufacturing an abrasive particle according to a first embodiment of the invention;

FIG. 7 is a schematic view of an abrasive particle according to a second embodiment of the present invention;

FIG. 8 is a flowchart illustrating a method of manufacturing abrasive particles according to a second embodiment of the present invention.

Detailed Description

Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.

The method has the advantages that the method is simple in chemical grinding, high in surface precision, low in damage, good in integrity, not easy to cause surface/sub-surface damage, but low in grinding speed, low in material removal efficiency, incapable of correcting surface profile precision and poor in grinding consistency; the pure mechanical grinding has good grinding consistency, high surface flatness and high grinding efficiency, but surface layer/sub-surface layer damage is easy to occur, and the surface roughness value is lower. The chemical mechanical polishing technology combines the advantages of chemical polishing and mechanical polishing. The chemical mechanical grinding absorbs the respective advantages of the two, can obtain a perfect surface while ensuring the material removal efficiency, obtains the flatness which is 1 to 2 orders of magnitude higher than that of the two grinding methods, and can realize the surface roughness from nano level to atomic level.

The chemical mechanical polishing technique utilizes chemical reaction and mechanical polishing to completely planarize the rugged profile of the chip surface. The abrasive particles are used to form an abrasive during a planarization process (e.g., chemical mechanical polishing). Fig. 1 shows a chemical mechanical polishing mechanism, during which polishing particles 14 are located between a polishing pad 12 and a target 13 surface (e.g., a wafer surface). Taking the polishing of the surface of the chip 13 as an example, during the polishing process, the chip 13 is subjected to a pressure 11 (which may be from a chip cleaning machine, for example) in the direction indicated by the arrow in fig. 1, and at this time, the polishing particles 14 contact the surface of the chip 13, and the polishing particles 14 and the surface of the chip 13 undergo a chemical mechanical action, so as to polish off the particles on the surface of the chip 13 and achieve the purpose of planarization.

Since the abrasive particles 14 in the abrasive are in contact with the surface of the chip 13 during the polishing process and the abrasive particles 14 are pressed into the surface of the chip 13 by the pressure 11, if the abrasive particles 14 in the abrasive have irregular shapes or have angular edges, the abrasive particles 14 easily scratch the surface of the chip 13 during the polishing process, thereby causing defects on the surface of the chip 13, which become more prominent as the chip is manufactured into smaller sizes.

To this end, the examples of the present application provide a scanning electron microscope (sem) image of a conventional abrasive particle cerium oxide particle and a schematic view of the cerium oxide particle, please refer to fig. 2 and 3. As can be seen from fig. 2 and 3, the cerium oxide particles have a sphere-like structure with irregular shapes on the surface, and these irregular corners scratch the surface of the chip when the cerium oxide particles are used as abrasive particles to polish semiconductor devices, resulting in chip defects. This drawback will be more pronounced as chip fabrication moves to smaller sizes.

The present applicant has paid attention to the above-described problems and has proposed abrasive particles for semiconductors which can reduce the risk of scratching the surface of a target material, and a method for producing the same.

The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.

In view of the above problems, the embodiments of the present application use porous carbon-mesoporous cerium oxide microspheres with regular shapes and smooth surfaces as abrasive particles instead of conventional cerium oxide particles in configured abrasives.

FIG. 4 is a schematic view showing abrasive grains of an abrasive according to an embodiment of the present invention.

Referring to fig. 4, the abrasive particle 200 is a spherical structure including a core 210 and a first core shell 220 wrapping the core 210, the first core shell 220 also serves as an abrasive layer, in this embodiment, the core is a spherical structure, and in other embodiments of the present invention, the core may be a structure with various shapes, such as an ellipsoid, a square, etc. Specifically, the material of the core 210 portion is, for example, porous carbon, and the material of the first core shell 220 portion is, for example, cerium oxide.

In this embodiment, the shape of the polishing particles 200 is regular spherical, so the surface thereof is smooth and has no edge angle, so when the chemical mechanical polishing slurry comprising the polishing particles 200 is used to polish a semiconductor chip, the abrasive therein will not scratch the chip surface and bring defects to the chip surface, therefore, the polishing particles can limit and reduce the scratch defects of the chip surface in the chemical mechanical polishing process, improve the polishing quality, and have good economic benefits.

In a preferred embodiment, the core 210 of the abrasive particle 200 is a resilient core porous carbon, and during the abrading process, the abrasive particle 200 is elastically deformed, e.g., stretched in the direction of arrow 2 and compressed in the direction of arrow 1, when subjected to a compressive force as indicated by arrow 1. Such elastic deformation enables the pressure between the first core shell 220 and the surface of the chip not to be too large, thereby reducing the risk of scratching the surface of the chip.

In a preferred embodiment, the first core shell 220 of the abrasive particle 200 adopts a mesoporous structure, and when the semiconductor structure is ground, the mesoporous structure of the first core shell 220 can enhance the toughness of the abrasive particle 200, and reduce the particle breakage to some extent, thereby further effectively reducing the risk of scratching the surface of the target material by the broken particles.

According to one non-limiting example of the present invention, the core 210 of the abrasive particle 200 is a polymeric microsphere, i.e., the core 210 is a spherical structure composed of a polymeric material. This arrangement has the advantages of allowing the final shape of the abrasive particles 200 to be relatively close to spherical, and facilitating the preparation of the polymeric microspheres.

The maximum size of the core 210 of the abrasive particles 200 may be adjusted within a certain range according to factors such as hardness and roughness of a semiconductor to be polished, polishing pressure, and the condition of additives in the polishing agent. The "maximum dimension" is herein understood to be the linear distance between two points on a single core 210 that are most distant from each other. For example, when the core 210 is spherical, the maximum dimension is the diameter of the sphere. In some embodiments of the present invention, the size of the core 210 of the abrasive particle 200 can be generally adjusted between 20 nm and 2000 nm. An excessively small core 210 may result in increased difficulty in processing the core 210, whereas an excessively large core 210 may increase the probability of scratching the surface of the target material and cause the rough portions of the surface of the target material to be insufficiently worn. Still further, in some embodiments of the present invention, the size of the core 210 is not less than 50 nanometers, or not less than 100 nanometers. In some embodiments of the present invention, the size of the core 210 is no greater than 500 nanometers, or no greater than 1000 nanometers.

Similarly, the ratio of the core 210 to the first core shell 220 in the abrasive particle 200 should be suitable. The mass ratio of the core to the core shell is generally controlled to be 1: 9 to 9: 1, or a salt thereof. The reason for this is that when the core 210 is too large and the first core shell 220 is too thin, the first core shell 220 is easily broken and then falls off from the core 210, so that the grinding effect is reduced; when the core 210 is too small and the first core shell 220 is too large, the first core shell 220 forms a solid shell, which reduces the toughness of the first core shell 220.

Next, a method of manufacturing the abrasive particles 200 will be described, fig. 5 is a flowchart illustrating a method of manufacturing the abrasive particles according to an embodiment of the present invention, and fig. 6 is a schematic diagram illustrating stages of the method of manufacturing the abrasive particles according to an embodiment of the present invention, and the method of manufacturing the abrasive particles is described in detail below with reference to fig. 5 and 6.

Step S110: forming a core microsphere of the abrasive particle.

In this step, high polymer microspheres, such as polystyrene microspheres, can be used as the core microspheres 211 of the abrasive particles, and as shown in fig. 6a, the high polymer microspheres 211 become porous carbon cores 210 during the subsequent formation of the abrasive particles 200.

Specifically, the preparation method of the polystyrene microsphere comprises the following steps: the reaction product, namely the monodisperse porous carbon nanospheres 211, is obtained by mixing styrene, ammonium persulfate and water according to the mass ratio and reacting at a certain reaction temperature for a certain reaction time. In this embodiment, the mass ratio of styrene is about 0.01% to 8.00%, the mass ratio of ammonium persulfate is about 0.01% to 0.1%, the mass ratio of water is about 98% to 99.98%, the reaction time is 1 to 48 hours, and the reaction temperature is 50 to 90 ℃.

In other embodiments, the core microsphere 211 may also be other spherical structures, such as an ellipsoid.

Step S120: dispersing the core microspheres in an organic solvent, heating to a first temperature, adding a cationic surfactant and an alkaline pH value regulating solution, and refluxing for a first time.

In this step, the core microspheres 211 are dispersed in an organic solvent, which may facilitate further processing of the core microspheres 211 in subsequent steps. The organic solvent may be any liquid that does not substantially affect the core microsphere 211 and does not substantially affect the subsequent reaction process. For example, ethanol, methanol, toluene, acetone, isopropanol, or the like can be used as the organic solvent.

Further, the organic solvent mixed with the core microspheres 211 is heated to the first temperature. The first temperature is, for example, 30 ℃ to 70 ℃. Preferably, the first temperature is 50 ℃.

Further, a cationic surfactant and an alkaline pH value regulating solution are added into the organic solvent. The cationic surfactant is used to make the surface of the core microspheres 212 positively charged, and the alkaline ph adjusting fluid is used to make the ph of the organic solvent containing the core more suitable for the abrasive source to release the abrasive particles.

In this embodiment, the specific components of the cationic surfactant may be various, and include, for example, any one of dodecyl trimethyl ammonium bromide (N, N-trimethyl-1-dodecanoaminium bromide, DTAB), tridecyl trimethyl ammonium bromide, Tetradecyl Trimethyl Ammonium Bromide (TTAB), pentadecyl trimethyl ammonium bromide, Hexadecyl trimethyl ammonium bromide (CTAB), or octadecyl trimethyl ammonium bromide (stearyltrimethylammonium bromide), or a mixture of any of the above. Similarly, the alkaline ph adjusting solution may be various alkaline substances such as sodium hydroxide, potassium hydroxide, and the like. In addition, in order to make the added alkaline pH value regulating solution easily removed and control the residue, ammonia water can be selected and used.

In this embodiment, refluxing at a first temperature for a first length of time may result in a uniform positive charge on the surface of core microsphere 212, as shown in FIG. 6 b. Preferably, the first duration of reflux is 5 hours.

Step S130: adding an abrasive source to form a reaction mixture, and reacting at a second temperature for a second time period to obtain a first product.

In this step, the abrasive source may be various materials capable of providing the core-shell abrasive layer, for example, the abrasive source may be cerium isopropoxide. In other embodiments, the abrasive source can be other materials capable of acting as an abrasive.

In the previous step, since the alkaline ph adjusting solution is added to the organic solvent, when the abrasive source cerium isopropoxide is added, cerium isopropoxide hydrolyzes out the oligomeric cerium oxide nanoparticles 221 at a suitable rate, and each oligomeric cerium oxide nanoparticle 221 has a negative charge. Since the cationic surfactant added in step 120 can make the surface of the core microsphere 212 have a positive charge, the cerium oxide nanoparticles 221 can be adsorbed onto the surface of the core due to the adsorption between the positive and negative charges, as shown in fig. 6 c.

Further, the reaction is carried out at a second temperature for a second period of time, which is suitably a temperature and a period of time that enable the adsorption process to proceed sufficiently and to obtain the abrasive particles composed of the core microspheres 213 and the first core shell 220 of cerium oxide as shown in FIG. 6d, which is also referred to as an aging process.

In this embodiment, the second temperature is, for example, -10 ℃ to 60 ℃. Preferably, the second temperature is 50 ℃. The second period of time is, for example, 0.5 to 24 hours. Too short a second period of time results in less adsorbed oligomeric cerium oxide nanoparticles and the resulting core-shell is too thin and susceptible to cracking. And the second time of the reaction is too long, so that the adsorbed oligomeric cerium oxide nanoparticles are too much, the finally formed core shell is too thick, and the toughness of the grinding particles is reduced. In a preferred embodiment, the second period of time is, for example, 5 hours.

In this embodiment, the aging process can improve the performance of the abrasive particles.

Step S140: the first product is calcined at a third temperature for a third length of time.

In this example, the first product formed after aging was calcined in a nitrogen atmosphere to obtain abrasive particles 200 of porous carbon-cerium oxide microspheres. In this embodiment, the third temperature is, for example, 450 ℃ to 550 ℃ and the third time period is, for example, 2 to 7 hours. Preferably, in this embodiment, the third temperature is, for example, 500 ℃ and the third time period is, for example, 5 hours.

In one embodiment, the abrasive particles 200 are, for example, polystyrene microspheres, cetyl trimethylammonium bromide, cerium isopropoxide, ammonia and water, which are prepared by the above-mentioned preparation method and are disposed in a certain mass ratio. Specifically, the polystyrene microsphere is 0.01-5 wt%, the cetyl trimethyl ammonium bromide is 0.01-0.1 wt%, the cerium isopropoxide is 0.01-22.5 wt%, the ammonia water is 0.01-1 wt%, and the balance is made up by using water.

Further, in this embodiment, the method further comprises the steps of filtering, washing, and drying, thereby obtaining high content, clean, and dry abrasive particles.

FIG. 7 is a schematic view of an abrasive particle according to a second embodiment of the present invention; FIG. 8 is a flowchart illustrating a method of manufacturing abrasive particles according to a second embodiment of the present invention.

The abrasive particle 300 of the second embodiment is different from the abrasive particle 200 of the first embodiment shown in fig. 4 in that the core shell of the abrasive particle 300 includes a second core shell 321 and a first core shell 322.

Referring to fig. 7, the abrasive particle 300 is a spherical structure including a core 210 and a core shell surrounding the core 210. In this embodiment, the core 210 is an elastic core body, and deforms in a direction indicated by an arrow 2 under the action of pressure 1, the core-shell includes a second core-shell 321 and a first core-shell 322, the second core-shell 321 is located between the core 210 and the first core-shell 322 and serves as a transition layer between the core 210 and the first core-shell 322, the second core-shell 321 also has certain elasticity and is used for preventing the problem that the first core-shell 322 is easily broken when the pressure 1 is too large, and the first core-shell 322 serves as a grinding layer and is used for grinding a target material. Specifically, the material of the core 210 is, for example, porous carbon, the material of the second core-shell 321 is, for example, high molecular polymer, and the material of the first core-shell 322 is, for example, cerium oxide.

In the abrasive particle 300 shown in the second embodiment, the second core-shell 321 having a certain elasticity is added between the core 210 and the first core-shell 322, and the elasticity of the second core-shell 321 is between the elasticity of the core 210 and the elasticity of the first core-shell 322, and is used as a transition layer between the core 210 and the first core-shell 322, so that the probability of damage to the abrasive particle 300 can be reduced, and the scratch to the surface of the chip can be further reduced.

In the flowchart of the method for producing abrasive particles according to the second embodiment shown in fig. 8, a step of forming a first core shell is added as compared with the first embodiment.

Step S210: forming a core microsphere of the abrasive particle.

Step S220: and forming a second core shell on the surface of the core microsphere.

In this step, the second core-shell 321 is, for example, a high molecular polymer, and is used to form a transition layer between the core microsphere and the first core-shell, so as to increase the toughness of the abrasive particles and reduce the probability of breakage, thereby further reducing the risk of scratching the chip.

Step S230: dispersing the core microspheres with the second core-shell in an organic solvent, heating to a first temperature, adding a cationic surfactant and an alkaline pH value regulating solution, and reacting at the first temperature for a first time.

Because the material of the second core-shell 321 is a high molecular polymer, the cationic surfactant can also make the surface of the second core-shell have electropositivity, thereby facilitating the subsequent formation of the first core-shell.

Step S240: adding an abrasive source to form a reaction mixture, and reacting at a second temperature for a second time to obtain a first product.

Step S250: the first product is calcined at a third temperature for a third length of time.

The application also provides an abrasive which comprises the abrasive particles, the additive and the abrasive base liquid. The grinding particles account for 0.01-20% of the mass of the grinding agent, the additives account for 0.01-5.0% of the mass of the grinding agent, and the balance is grinding base liquid.

In this embodiment, the additive includes at least one of an organic acid, an inorganic acid, and a surfactant. The organic acid comprises one or a mixture of more of acetic acid, propionic acid, butyric acid, citric acid, tartaric acid, oxalic acid, maleic acid or phthalic acid, the inorganic acid comprises one or a mixture of more of hydrochloric acid, nitric acid or phosphoric acid, and the surfactant comprises one or a mixture of more of polyoxyethylene ether, polyacrylic acid or polymethacrylic acid.

In the polishing agent, the proportion of the polishing particles, the additive and the polishing base liquid can be adjusted within a certain range according to actual needs so as to achieve the optimal polishing effect.

While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. An abrasive particle comprising:

the core is an elastic core body with a spherical structure and can elastically deform under the action of pressure;

a first core shell wrapping the core, wherein the first core shell is a grinding layer and is used for grinding a target material,

wherein the first core-shell has a mesoporous structure.

2. The abrasive particle of claim 1, further comprising a second core-shell between said core and said first core-shell.

3. The abrasive particle of claim 2, wherein said second core shell acts as a transition layer between said resilient core and said abrasive layer to increase the toughness of said abrasive particle.

4. The abrasive particle according to claim 1, wherein the core and the second core shell are formed of a high molecular polymer.

5. The abrasive particle according to claim 4, wherein a material of the core is porous carbon, and a material of the first core shell is cerium oxide.

6. The abrasive particle according to claim 5, wherein the porous carbon as the core material is prepared by calcining a polystyrene microsphere.

7. The abrasive particle according to claim 1, wherein the range of the mass ratio of the core to the first core shell comprises 1: 9 to 9: 1.

8. a method of making abrasive particles, comprising:

forming a core microsphere of an abrasive particle;

dispersing the core microspheres in an organic solvent and heating to a first temperature;

adding a cationic surfactant and refluxing at a first temperature for a first length of time;

adding an abrasive source to form a reaction mixed solution, and reacting at a second temperature for a second time to obtain a first product;

reacting the first product at a third temperature for a third period of time to obtain the abrasive particles,

the abrasive source is used for forming a first core shell for grinding a target material, and the first core shell has a mesoporous structure.

9. The manufacturing method according to claim 8, further comprising, between the steps of forming the core microspheres of abrasive grains and dispersing the core microspheres in an organic solvent, heating to a first temperature:

and forming a second core-shell on the obtained surface of the core microsphere.

10. The method of manufacturing of claim 9, wherein the second core shell acts as a transition layer between the core microsphere and the first core shell to increase the toughness of the abrasive particles.

11. The manufacturing method according to claim 10, wherein the core microsphere and the second core shell are composed of a high molecular polymer.

12. The method of manufacturing of claim 11, wherein the core microspheres are polystyrene microspheres.

13. The method of claim 12, wherein the core material of the abrasive particles is porous carbon, and the core is prepared by reacting polystyrene microspheres.

14. The manufacturing method according to claim 8, wherein a range of the mass ratio of the core to the first core shell includes 1: 9 to 9: 1.

15. the production method according to claim 8, wherein the organic solvent comprises one or more of ethanol, methanol, toluene, acetone, isopropyl alcohol, or the like.

16. The method according to claim 8, further comprising, in addition to the cationic surfactant:

adding alkaline pH value regulating liquid.

17. The production method according to claim 8, wherein the material of the abrasive source is cerium isopropoxide, which is hydrolyzed in the organic solvent into oligomeric cerium oxide nanoparticles.

18. An abrasive comprising an additive, an abrasive base liquid and the abrasive fine particles according to any one of claims 1 to 7, or the abrasive fine particles produced by the production method according to any one of claims 8 to 17.