CN102373014A - Chemical-mechanical polishing solution - Google Patents
Chemical-mechanical polishing solution Download PDFInfo
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- CN102373014A CN102373014A CN2010102641651A CN201010264165A CN102373014A CN 102373014 A CN102373014 A CN 102373014A CN 2010102641651 A CN2010102641651 A CN 2010102641651A CN 201010264165 A CN201010264165 A CN 201010264165A CN 102373014 A CN102373014 A CN 102373014A
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- mechanical polishing
- chemical mechanical
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Abstract
The invention discloses a chemical-mechanical polishing solution which contains grinding particles, an oxidizing agent, a polishing promoter, a corrosion inhibitor and a carrier. Through a polishing system, the chemical-mechanical polishing solution provided in the invention enables a polishing rate of metals through a polishing system to be improved, local and integral corrosion of a metal material to be controlled, pollutants on the surface of a machine bench and a substrate to be reduced and the yield rate of a product.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid, be specifically related to an a kind of grinding particle, oxygenant, polishing speed elevator, chemical mechanical polishing liquid of corrosion inhibitor and carrier of containing.
Background technology
Planarization has become with photoetching and etching is of equal importance and one of complementary indispensable gordian technique in the IC ME.And chemically machinery polished (CMP) technology be at present the most effectively, the most sophisticated planarization.Chemical-mechanical polishing system is that technology such as collection cleaning, drying, online detection, end point determination are technological with the chemical-mechanical planarization of one; Being unicircuit (IC) to the product of miniaturization, multiple stratification, planarization, slimming development, is that unicircuit is enhanced productivity, reduced cost, the indispensable technology of wafer overall situation planarization.CMP is widely used in IC manufacturing field, and the polishing object comprises substrate, medium and interconnection material etc.Wherein metal CMP is the device and one of the critical process made that interconnects in the following chip manufacturing of 90 nanometers, is the research focus of inferior 90 nanometer era.Metallic copper, aluminium, tungsten are being applied to the interconnection on the IC-components more and more, must realize multilayer interconnection through chemically machinery polished, thereby the chemical mechanical polishing of metals liquid of developing a new generation lets the industry concern always.
At present, a series of chemical mechanical polishing slurries that are suitable for polishing Cu have appearred, as: patent US6,616,717 disclose a kind of compsn and method that is used for metal CMP; Patent US5,527,423 disclose a kind of chemical mechanical polishing slurry that is used for metal level; Patent US6,821,897 disclose a kind of method of using the copper CMP of polymer complexing agent; Patent CN02114147.9 discloses a kind of polishing liquid used in copper chemical mechanical polishing technology; Patent CN01818940.7 discloses the used slurry of chemically machinery polished of copper; Patent CN98120987.4 discloses a kind of CMP slurries manufacturing of copper and method of manufacture that is used for unicircuit of being used for.But along with the 3D encapsulation technology is constantly ripe, silicon through hole technology constantly obtains the more application more, high speed copper polishing also more and more causing people's attention.Above-mentioned polishing fluid is used for the high speed copper polishing and also has the not situation of family of speed of removing; Perhaps substrate surface exists defective, scuffing, pickup and/or other is residual; Or not enough, or exist problems such as part or general corrosion in the polishing process to the polishing selectivity of copper.Therefore be necessary to develop the chemical mechanical polishing slurry that is applicable to the high speed processing procedure that makes new advances.The invention discloses a kind of absolute removal speed through new polishing system effect control metal, control the part and the general corrosion of metallic substance simultaneously, reduce the substrate surface pollutent, it has the different of essence with prior art.
Summary of the invention
The technical problem that the present invention solves is the effect raising medal polish speed through the polishing system, controls the part and the general corrosion of the material of metal simultaneously, reduces board and substrate surface pollutent, improves the product yield.
Chemical mechanical polishing liquid of the present invention contains and grinds a particle, oxygenant, polishing speed elevator, corrosion inhibitor and carrier.
Among the present invention; Chemical mechanical polishing liquid according to claim 1; The quality percentage composition of described abrasive grains is 0.05～15%, and the quality percentage composition of described oxygenant is 0.01～10%, and the quality percentage composition of described polishing speed elevator is 0.01～5%; The quality percentage composition of described corrosion inhibitor is 0.01～5%, and surplus is a carrier
Among the present invention, described abrasive grains is selected from one or more in silicon oxide, aluminum oxide, cerium oxide and/or the polymer beads.Preferably, described abrasive grains is a silicon oxide.
Among the present invention, described polymer beads is Vilaterm and/or tetrafluoroethylene.
Among the present invention, the particle diameter of described abrasive grains is 20～200nm, preferably is 30～100nm.
Among the present invention, described oxygenant is selected from one or more in superoxide, persulfide and/or the single persulfide.
Among the present invention, described superoxide is an organo-peroxide.
Among the present invention, described polishing speed elevator is selected from one or more in amino acid, ammoniac compounds, organic see acid and/or the organic sulfonic acid.Described polishing speed elevator can be to form with the copper surface reaction and is prone to dissolve compound
Among the present invention, described corrosion inhibitor is selected from and can forms in the nitrogenous azole compounds, organic acid, organic acid ammonium salt, amino acid, ammoniac compounds, organic see acid and/or organic sulfonic acid of insoluble compound one or more with copper surface precipitation reaction.
Among the present invention, described carrier is a water.
Among the present invention, contain the pH regulator agent.
Among the present invention, described pH regulator agent is selected from one or more in sulfuric acid, nitric acid, phosphoric acid, ammoniacal liquor, Pottasium Hydroxide, thanomin and/or the trolamine.
Among the present invention, the pH value is 3.0～11.0, preferably is 3.0～7.0, and more preferably is 9.0～11.0.
Among the present invention, contain in tensio-active agent, stablizer, suppressor factor and/or the sterilant one or more.
Finishing method of the present invention comprises: in CMP process, with chemical mechanical polishing liquid of the present invention copper is polished.
Positive progressive effect of the present invention is: chemical mechanical polishing liquid of the present invention can improve medal polish speed through the effect of polishing system, and the part and the general corrosion of the material of control metal reduce board and substrate surface pollutent, improve the product yield.
Description of drawings
Surface optical microscope figure behind Fig. 1 polishing fluid 4 polish copper substrates.
Surface optical microscope figure behind Fig. 2 polishing fluid 5 polish copper substrates.
Surface optical microscope figure behind Fig. 3 polishing fluid 6 polish copper substrates.
Surface optical microscope figure behind Fig. 4 Comparative Examples polish copper substrate.
Embodiment
Preparation embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.Among the following embodiment, per-cent is mass percent.
Table 1 has provided polishing fluid 1～36 of the present invention and Comparative Examples, presses listed component and content thereof in the table 1, and each component is mixed, and supplies polishing fluid quality 100% with deionized water.Use pH regulator agent (20%KOH or rare HNO at last
3, select according to the needs of pH value) and be adjusted to required pH value, continue to be stirred to uniform fluid, leave standstill and can obtain each chemical mechanical polishing liquid in 30 minutes.
Table 1 chemical mechanical polishing liquid of the present invention prepares embodiment 1～36 with Comparative Examples
Effect embodiment
With identical polishing condition; The polishing fluid of embodiment 31～36 and the polishing fluid of Comparative Examples (are comprised Ta substrate, Cu substrate to differing materials respectively; Figuratum silicon chip (silicon substrate of sputter Ta blocking layer and electro-coppering), a polish copper also stops at tantalum barrier layer) polish.
Burnishing parameters is following: Logitech polishing pad, downward pressure 2-5psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 120s, chemical mechanical polishing liquid flow velocity 100mL/min.Polish results is seen table 2.
The effect embodiment of table 2 embodiment 31～36 and Comparative Examples
Can find that chemical mechanical polishing liquid of the present invention has the following advantages in data from table 2 and the accompanying drawing 1～4:
1) chemical mechanical polishing liquid of the present invention does not produce part and general corrosion basically in the medal polish process, does not have substrate surface defective, scuffing, pickup and other residual contaminants basically
2) have the removal speed of higher copper, can satisfy the polishing requirement of high speed copper;
3) under the situation of the abrasive grains that hangs down consumption; Quality percentage composition like abrasive grains in the chemical mechanical polishing liquid of embodiment 33 is 0.5%; The removal speed that also can keep higher copper, thereby the defective of making, scuffing, pickup and other residual obvious decline.
Claims (15)
1. a chemical mechanical polishing liquid contains and grinds a particle, oxygenant, polishing speed elevator, corrosion inhibitor and carrier.
2. chemical mechanical polishing liquid according to claim 1; The quality percentage composition of described abrasive grains is 0.05～15%; The quality percentage composition of described oxygenant is 0.01～10%; The quality percentage composition of described polishing speed elevator is 0.01～5%, and the quality percentage composition of described corrosion inhibitor is 0.01～5%, and surplus is a carrier.
3. chemical mechanical polishing liquid according to claim 1, described abrasive grains is selected from one or more in silicon oxide, aluminum oxide, cerium oxide and/or the polymer beads.
4. chemical mechanical polishing liquid according to claim 3, described polymer beads are Vilaterm and/or tetrafluoroethylene.
5. chemical mechanical polishing liquid according to claim 1, the particle diameter of described abrasive grains are 20～200nm.
6. chemical mechanical polishing liquid according to claim 1, described oxygenant are selected from one or more in superoxide, persulfide and/or the single persulfide.
7. chemical mechanical polishing liquid according to claim 6, described superoxide are organo-peroxide.
8. chemical mechanical polishing liquid according to claim 1, described polishing speed elevator are selected from one or more in amino acid, ammoniac compounds, organic see acid and/or the organic sulfonic acid.
9. chemical mechanical polishing liquid according to claim 1, described corrosion inhibitor are selected from one or more in nitrogenous azole compounds, organic acid, organic acid ammonium salt, amino acid, ammoniac compounds, organic see acid and/or the organic sulfonic acid.
10. chemical mechanical polishing liquid according to claim 1, described carrier are water.
11. chemical mechanical polishing liquid according to claim 1 contains the pH regulator agent.
12. chemical mechanical polishing liquid according to claim 11, described pH regulator agent is selected from one or more in sulfuric acid, nitric acid, phosphoric acid, ammoniacal liquor, Pottasium Hydroxide, thanomin and/or the trolamine.
13. chemical mechanical polishing liquid according to claim 11, pH value are 3.0～11.0.
14. chemical mechanical polishing liquid according to claim 1 contains in tensio-active agent, stablizer, suppressor factor and/or the sterilant one or more.
15. a finishing method, said finishing method comprises: in CMP process, with each described polishing fluid among the claim 1-14 copper is polished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102641651A CN102373014A (en) | 2010-08-24 | 2010-08-24 | Chemical-mechanical polishing solution |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102641651A CN102373014A (en) | 2010-08-24 | 2010-08-24 | Chemical-mechanical polishing solution |
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| CN102373014A true CN102373014A (en) | 2012-03-14 |
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| CN2010102641651A Pending CN102373014A (en) | 2010-08-24 | 2010-08-24 | Chemical-mechanical polishing solution |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013177943A1 (en) * | 2012-05-30 | 2013-12-05 | 安集微电子（上海）有限公司 | Chemical mechanical planarization slurry and application thereof |
| CN107189695A (en) * | 2017-04-15 | 2017-09-22 | 浙江晶圣美纳米科技有限公司 | A kind of polishing fluid for being efficiently applied to stainless steel lining bottom CMP process |
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2010
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| CN107189695A (en) * | 2017-04-15 | 2017-09-22 | 浙江晶圣美纳米科技有限公司 | A kind of polishing fluid for being efficiently applied to stainless steel lining bottom CMP process |
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Application publication date: 20120314 |