CN102373013A - Chemically mechanical polishing solution - Google Patents
Chemically mechanical polishing solution Download PDFInfo
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- CN102373013A CN102373013A CN201010264137XA CN201010264137A CN102373013A CN 102373013 A CN102373013 A CN 102373013A CN 201010264137X A CN201010264137X A CN 201010264137XA CN 201010264137 A CN201010264137 A CN 201010264137A CN 102373013 A CN102373013 A CN 102373013A
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- mechanical polishing
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Abstract
The invention discloses a chemically mechanical polishing solution which comprises grinding particles, an oxidizing agent, a polishing velocity promoting agent, a stabilizer and a carrier. By virtue of the action of a polishing system, the chemically mechanical polishing solution provided by invention can be used for improving the metal velocity, increasing the stabilization time of the polishing solution, reducing the pollution to a polishing cushion and a polishing machine, simultaneously controlling the partial and total corrosion of a metal material, reducing surface contaminants of a substrate and improving the product yield.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid, be specifically related to a kind of abrasive grains that contains, oxygenant, polishing speed elevator, the chemical mechanical polishing liquid of stablizer and carrier.
Background technology
Planarization has become with photoetching and etching is of equal importance and one of complementary indispensable gordian technique in the IC ME.And chemically machinery polished (CMP) technology be at present the most effectively, the most sophisticated planarization.Chemical-mechanical polishing system is that technology such as collection cleaning, drying, online detection, end point determination are technological with the chemical-mechanical planarization of one; Being unicircuit (IC) to the product of miniaturization, multiple stratification, planarization, slimming development, is that unicircuit is enhanced productivity, reduced cost, the indispensable technology of wafer overall situation planarization.CMP is widely used in IC manufacturing field, and the polishing object comprises substrate, medium and interconnection material etc.Wherein metal CMP is the device and one of the critical process made that interconnects in the following chip manufacturing of 90 nanometers, is the research focus of inferior 90 nanometer era.Metallic copper, aluminium, tungsten are being applied to the interconnection on the IC-components more and more, must realize multilayer interconnection through chemically machinery polished, thereby the chemical mechanical polishing of metals liquid of developing a new generation lets the industry concern always.
It is that the compsn of oxygenant is used for the tungsten polishing with the iron nitrate that US4789648 and US4944836 disclose; But said composition is extremely unstable to polishing pad, and polishing machine platform has deep-etching and pollution, simultaneously transport pipeline is also had pollution; Although there is the US6284151 patent to make improvements; Still it is unstable to be difficult to overcome him, and to polishing pad, polishing machine platform has the major defect of deep-etching and pollution.US5958288 discloses a kind of compsn that contains oxygenant and many oxidized catalyst and has been used for the tungsten polishing; US5980775 and US6068787 disclose a kind of compsn that contains oxygenant and many oxidized catalyst and stablizer simultaneously can realize the tungsten polishing.CN200580019842.0 discloses a kind of oxygenant and many oxidized catalyst, compsn of stablizer and corrosion inhibitor of containing; Above patent all need be used ydrogen peroxide 50 as oxygenant.Ydrogen peroxide 50 is a kind of etching agent of tungsten, and is particularly at high temperature, fairly obvious to the corrosion of tungsten.
Different with prior art, the invention discloses a kind of through new polishing system effect control metal absolute removal speed and to the relative removal speed ratio of dielectric substance, control the part and the general corrosion of metallic substance simultaneously, reduce the substrate surface pollutent.
Summary of the invention
The present invention is in order to improve metal speed, improves polishing fluid steady time, reduces polishing pad, and the part and the general corrosion of the material of metal are controlled in the pollution of polishing machine platform simultaneously, reduce the substrate surface pollutent, improve the product yield.
Chemical mechanical polishing liquid of the present invention contains abrasive grains, oxygenant, polishing speed elevator, stablizer and carrier.
In the present invention; Described chemical mechanical polishing liquid; The quality percentage composition of described abrasive grains is 0.1～10%, and described oxygenant quality percentage composition is 0.1～2%, and the quality percentage composition of described polishing speed elevator is 0.01～0.5%; The quality percentage composition of described polishing stablizer is 0.01～2%, and surplus is a carrier.
In the present invention, described abrasive grains is selected from one or more in silicon oxide, aluminum oxide, cerium oxide and/or the polymer beads, and described polymer beads can be tetrafluoroethylene.
In the present invention, the particle diameter of described abrasive grains is 20～200nm, more preferably is 30～100nm.
In the present invention, described oxygenant can be various burning agent of the prior art, preferably is selected from Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, K, one or more in the high price salt of Na and V.
In the present invention; Described polishing speed elevator is selected from the polycarboxylic acid and is polyacrylic compounds and cinnamic copolymerization; The polycarboxylic acid is acrylic compounds and cinnamic copolymerization; The polycarboxylic acid is the copolymerization of acrylic compounds and MALEIC ANHYDRIDE, and the polycarboxylic acid is one or more in the copolymerization of acrylic compounds and esters of acrylic acid.The molecular weight of described copolymerization is 2000～3000000.Described polycarboxylic acid of described polishing speed elevator and/or its esters are formula I compound:
Wherein, R1, R2 are Wasserstoffatoms or carbonatoms less than 3 alkyl by oneself, and R3 is H, K, Na or NH
4
In the present invention, described stablizer can effectively be eliminated the pollution of burning agent to polishing pad for forming the complexing agent of the complex compound of colourless/light color with the respective metal oxygenant, stablizes polishing performance simultaneously.Possible stablizer has various organic acids, mineral acid, metal complex or the like.
In the present invention, described chemical mechanical polishing liquid can further contain the pH regulator agent.Described regulator can be various acid and/or alkali, so that pH regulator to desirable value is got final product, and sulfuric acid preferably, nitric acid, phosphoric acid, ammoniacal liquor, Pottasium Hydroxide, thanomin and/or trolamine or the like.In the present invention, the pH value of described chemical mechanical polishing liquid is 2.0～12.0.
In the present invention, described chemical mechanical polishing liquid can further contain one or more in tensio-active agent, stablizer, suppressor factor and/or the sterilant, with the further polishing performance that improves the surface.
Positive progressive effect of the present invention is: 1) effect through the polishing system improves polishing fluid steady time; Minimizing is to polishing pad; The pollution 2 of polishing machine platform) controls the part and the general corrosion of the material of metal simultaneously, reduce board and substrate surface pollutent, raising product yield.
Description of drawings
Fig. 1 is for adopting SEM (ESEM) figure after embodiment 2 polishing fluids polish.
Fig. 2 is for adopting SEM (ESEM) figure after embodiment 3 polishing fluids polish.
Fig. 3 is for adopting SEM (ESEM) figure after Comparative Examples 1 polishing fluid polishes.
Fig. 4 is for adopting SEM (ESEM) figure after Comparative Examples 2 polishing fluids polish.
Embodiment
Preparation embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.Among the following embodiment, per-cent is mass percent.
Table 1 has provided the prescription of chemical mechanical polishing liquid embodiment 1～7 of the present invention and Comparative Examples 1～2; Press listed component and content thereof in the table 1; Each material is pressed following order: abrasive grains, water, oxygenant, polishing speed elevator; The order of stablizer adds in the reactor drum successively and stirs, and the adding deionized water is diluted to volume required, uses pH regulator agent (20%KOH or rare HNO at last
3, select according to the needs of pH value) be adjusted to required pH value and continue to be stirred to uniform fluid, can obtain chemical mechanical polishing slurry in static 30 minutes.
Table 1 chemical mechanical polishing liquid prepares embodiment 1～7 and Comparative Examples 1～2
5020, BYK, 2029,20666 is specially polycarboxylic acid and/or its esters polishing speed elevator.
Effect embodiment
Respectively with the chemical mechanical polishing slurry of the foregoing description 1～7 to comprising the W substrate and for figuratum W silicon wafer polishing; Polishing condition is identical; Burnishing parameters is following: Logitech. polishing pad, downward pressure 3～5psi, rotary speed/rubbing head rotating speed=60/80rpm; Polishing time 120s, chemical mechanical polishing slurry flow velocity 100mL/min.Polish results is seen table 2.
Table 2 chemical mechanical polishing liquid effect embodiment 1～7 and Comparative Examples 1～2
SEM schemed the Comparative Examples 1 that Fig. 3 and Fig. 4 are respectively after Fig. 1 and Fig. 2 were respectively embodiment 2,3 polishings; SEM figure after 2 polishings; Can see among the figure that Comparative Examples has produced tangible tungsten corrosion hole, can see that in table 2 Comparative Examples tungsten erosion rate is obviously higher simultaneously, the tungsten surface contamination is arranged simultaneously.Prove absolutely that embodiment is superior to Comparative Examples with surface contaminant control aspect aspect corrosion control.
Therefore use chemical mechanical polishing slurry of the present invention can improve the polishing fluid polishing speed and reduce to polishing pad the pollution of polishing machine platform simultaneously; Control the part and the general corrosion of the material of metal simultaneously, reduce board and substrate surface pollutent, improve the product yield.
Claims (16)
1. a chemical mechanical polishing liquid contains abrasive grains, oxygenant, polishing speed elevator, stablizer and carrier.
2. chemical mechanical polishing liquid according to claim 1; The quality percentage composition of described abrasive grains is 0.2～10%; Described oxygenant quality percentage composition is 1～10%; The quality percentage composition of described polishing speed elevator is 0.01～3%, and the quality percentage composition of described polishing stablizer is 0.05～2%, and surplus is a carrier.
3. chemical mechanical polishing liquid according to claim 1, described abrasive grains is selected from one or more in silicon oxide, aluminum oxide, cerium oxide and/or the polymer beads.
4. chemical mechanical polishing liquid according to claim 3, described polymer beads are tetrafluoroethylene.
5. chemical mechanical polishing liquid according to claim 1, the particle diameter of described abrasive grains are 20～200nm.
6. chemical mechanical polishing liquid according to claim 1, described oxygenant is selected from common peroxide oxidant such as hydrogen peroxide, Potassium Persulphate, ammonium persulphate; Single Potassium Persulphate, ammonium persulphate, and Ag crossed; Cu, Fe, one or more in metals such as the Mn high price salt.
7. chemical mechanical polishing liquid according to claim 1; Described polishing speed elevator is selected from the polycarboxylic acid and is polyacrylic compounds and cinnamic copolymerization; The polycarboxylic acid is acrylic compounds and cinnamic copolymerization; The polycarboxylic acid is the copolymerization of acrylic compounds and MALEIC ANHYDRIDE, and the polycarboxylic acid is one or more in the copolymerization of acrylic compounds and esters of acrylic acid.
8. chemical mechanical polishing liquid according to claim 7, the molecular weight of described copolymerization are 2000～3000000.
9. chemical mechanical polishing liquid according to claim 7, described polycarboxylic acid of described polishing speed elevator and/or its esters are formula I compound:
formula I
Wherein, R1, R2 are Wasserstoffatoms or carbonatoms less than 3 alkyl by oneself, and R3 is H, K, Na or NH
4
10. chemical mechanical polishing liquid according to claim 1, described stablizer is for forming the complexing agent of the complex compound of colourless/light color with the respective metal oxygenant.
11. chemical mechanical polishing liquid according to claim 10, described stablizer are one or more in organic acid, mineral acid and/or the metal complex.
12. chemical mechanical polishing liquid according to claim 1 contains the pH regulator agent.
13. chemical mechanical polishing liquid according to claim 12, described pH regulator agent are one or more in sulfuric acid, nitric acid, phosphoric acid, ammoniacal liquor, Pottasium Hydroxide, thanomin and/or the trolamine.
14. chemical mechanical polishing liquid according to claim 12, pH value are 2.0～12.0.
15. chemical mechanical polishing liquid according to claim 1 contains in tensio-active agent, stablizer, suppressor factor and/or the sterilant one or more.
16. a finishing method, said finishing method comprises: in CMP process, with each described polishing fluid among the claim 1-15 tungsten is polished.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010264137XA CN102373013A (en) | 2010-08-24 | 2010-08-24 | Chemically mechanical polishing solution |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010264137XA CN102373013A (en) | 2010-08-24 | 2010-08-24 | Chemically mechanical polishing solution |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103144023A (en) * | 2013-03-05 | 2013-06-12 | 中国科学院微电子研究所 | Method for performing chemical-mechanical polishing to InP substrate |
| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| CN106700943A (en) * | 2016-11-22 | 2017-05-24 | 启东市惠鹤蔬果农地股份专业合作社 | Sapphire polishing solution |
| CN113122141A (en) * | 2019-12-30 | 2021-07-16 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN113526459A (en) * | 2021-07-16 | 2021-10-22 | 西南交通大学 | Surface planarization method for micro-scale 3D printing copper/nickel heterogeneous microstructure |
-
2010
- 2010-08-24 CN CN201010264137XA patent/CN102373013A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103144023A (en) * | 2013-03-05 | 2013-06-12 | 中国科学院微电子研究所 | Method for performing chemical-mechanical polishing to InP substrate |
| CN103144023B (en) * | 2013-03-05 | 2015-07-15 | 中国科学院微电子研究所 | Method for performing chemical-mechanical polishing to InP substrate |
| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| CN106700943A (en) * | 2016-11-22 | 2017-05-24 | 启东市惠鹤蔬果农地股份专业合作社 | Sapphire polishing solution |
| CN113122141A (en) * | 2019-12-30 | 2021-07-16 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN113526459A (en) * | 2021-07-16 | 2021-10-22 | 西南交通大学 | Surface planarization method for micro-scale 3D printing copper/nickel heterogeneous microstructure |
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Application publication date: 20120314 |