CN1900206B - Chemical and mechanical polishing liquid and its use - Google Patents
Chemical and mechanical polishing liquid and its use Download PDFInfo
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- CN1900206B CN1900206B CN2005100279881A CN200510027988A CN1900206B CN 1900206 B CN1900206 B CN 1900206B CN 2005100279881 A CN2005100279881 A CN 2005100279881A CN 200510027988 A CN200510027988 A CN 200510027988A CN 1900206 B CN1900206 B CN 1900206B
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- mechanical polishing
- chemical mechanical
- polishing liquid
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- metal
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- 238000005498 polishing Methods 0.000 title claims abstract description 80
- 239000000126 substance Substances 0.000 title claims abstract description 46
- 239000007788 liquid Substances 0.000 title claims description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 230000007797 corrosion Effects 0.000 claims abstract description 25
- 238000005260 corrosion Methods 0.000 claims abstract description 25
- 239000003112 inhibitor Substances 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 claims description 2
- RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000001263 FEMA 3042 Substances 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical class [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000011964 heteropoly acid Chemical class 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 229960003330 pentetic acid Drugs 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 claims description 2
- 229940033123 tannic acid Drugs 0.000 claims description 2
- 235000015523 tannic acid Nutrition 0.000 claims description 2
- 229920002258 tannic acid Polymers 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical class [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 2
- 229910000765 intermetallic Inorganic materials 0.000 claims 2
- 239000002245 particle Substances 0.000 abstract description 3
- 239000012530 fluid Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 239000008187 granular material Substances 0.000 description 7
- -1 inorganic acid salt Chemical class 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 239000012964 benzotriazole Substances 0.000 description 6
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 5
- 239000011609 ammonium molybdate Substances 0.000 description 5
- 229940010552 ammonium molybdate Drugs 0.000 description 5
- 235000018660 ammonium molybdate Nutrition 0.000 description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229960005363 aluminium oxide Drugs 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The chemical and mechanical polishing fluid includes at least one kind of grinding particle and one kind of carrier, as well as at least one kind of metal corrosion inhibitor. The present invention also discloses the use of this chemical and mechanical polishing fluid in polishing metal parts. The chemical and mechanical polishing fluid of the present invention has less faults in the polished metal surface, lowered metal eliminating rate and high surface quality of polished metal parts.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid and uses thereof.
Background technology
Development along with microelectronics, the very large scale integration chip integration is up to tens components and parts, characteristic dimension has entered nano level, this just requires the nearly hundred road technologies in the microelectronic technique, especially multilayer wiring, substrate, medium must carry out the leveling of the chemical machinery overall situation, and chemically machinery polished (CMP) has been proved to be best leveling method.
In cmp method, the polished surface of substrate is directly contacted with rotating polishing pad, exert pressure at backside of substrate simultaneously.During polishing, polishing pad rotates with operator's console, the power that while keeps down at backside of substrate, the liquid (being commonly referred to chemical mechanical polishing liquid) of abrasive material and chemically reactive solution composition is coated on the polishing pad, and this polishing slurries begins to carry out polishing process with the film generation chemical reaction and the mechanical effect of polishing.Polishing slurries is a kind of important factor in CMP, and can choose the polishing performance that changes of suitable polishing slurries according to the needs of processing procedure.
In typical chemical mechanical polishing of metals, defect level is higher usually, especially has problems such as spot corrosion, limit erosion, corrosion; And polishing speed is also very high, and is bigger to the degree of injury of metallic surface, easily produces as problems such as scuffing, surface irregularity.As patent US5209816 of the prior art, US6039891, US5897375, US6749488 and US6520840.
Summary of the invention
The present invention is in order to solve corrosion of the prior art and defect problem, thereby improves the metallic surface quality.
The purpose of this invention is to provide a kind of chemical mechanical polishing liquid.
The objective of the invention is to realize by following technical proposal: chemical mechanical polishing liquid of the present invention comprises at least a abrasive grains and a kind of carrier; Wherein, also comprise at least a metal corrosion inhibitor.Described metal corrosion inhibitor can react with the metallic surface, and reaction product covers and forms layer protecting film on the metallic surface, and this protective membrane can stop the metallic surface that corrosion and spot corrosion take place under sour environment.Therefore, described metal corrosion inhibitor can reduce metal and remove speed, reduces ratio of defects, improves surface quality.
Chemical mechanical polishing liquid of the present invention does not contain oxygenant, and the chemical mechanical polishing liquid that typically is used for the polishing metal all contains oxygenant.But the polishing performance that does not contain the chemical mechanical polishing liquid of oxygenant of the present invention also can reach the polishing performance of the chemical mechanical polishing liquid that typically contains oxygenant.Certainly, chemical mechanical polishing liquid of the present invention also can contain oxygenant, as is used for other metal except that aluminium, as the adjusting of the polishing speed of copper.
Wherein, this metal corrosion inhibitor preferably is an inorganic acid salt, this inorganic acid salt can be oxidisability and/or non-oxidizing inorganic acid salt, the preferred molybdate of this inorganic acid salt, chromic salt, permanganate, silicate, tungstate and/or heteropolyacid salt, more preferably molybdate, described molybdate is preferably ammonium molybdate.Described metal corrosion inhibitor can form layer protecting film in the metallic surface.
This abrasive grains can be any abrasive grains of the prior art, preferably is silicon-dioxide, aluminum oxide, cerium dioxide, titanium dioxide and/or high molecular polymer abrasive grains.
This carrier is an inorganic carrier preferably, as water, also can be the mixture of inorganic carrier and organic carrier, and as the mixture of water and polyvalent alcohol, described polyvalent alcohol preferably is a glycerol.
The mass concentration of the abrasive grains in the chemical mechanical polishing liquid of the present invention preferably is 1～10%, the mass concentration of metal corrosion inhibitor preferably is 0.01～10%, carrier is a surplus.
Chemical mechanical polishing liquid of the present invention preferably comprises one or more in membrane-forming agent, oxygenant, complexing agent and the pH regulator agent, also can also comprise tensio-active agent, with the surface quality of the substrate after the further raising polishing.
In chemical mechanical polishing liquid of the present invention, the mass concentration of described complexing agent preferably is 0.01～10%, the mass concentration of oxygenant preferably is 0～10%, the mass concentration of tensio-active agent preferably is 0.001～10%.
Described membrane-forming agent is benzotriazole, pyrazoles and/or imidazoles, preferred benzotriazole.
This complexing agent preferably is the compound of hydroxyl, carboxyl, sulfate, sulfonic group, phosphate, azanol base, amine salt and/or amido, more preferably is succsinic acid, oxalic acid, citric acid, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, ethylenediamine tetraacetic acid (EDTA) and/or tannic acid.
Described pH regulator agent preferably is potassium hydroxide, aqua ammonia, sulfuric acid or nitric acid.
This oxygenant preferably is hydrogen peroxide, iron nitrate, organo-peroxide and/or inorganic peroxide.
This tensio-active agent preferred cationic, negatively charged ion, nonionogenic tenside and/or polymeric surface active agent, more preferably fatty alcohol-polyoxyethylene ether, polyvinyl alcohol, polyoxyethylene alkyl amine and/or alkylol amide.
Another object of the present invention provides the purposes of chemical mechanical polishing liquid of the present invention in the polishing metal, and wherein, described metal is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or golden or the like, preferred aluminium.
Positive progressive effect of the present invention is: chemical mechanical polishing liquid of the present invention can suppress the spot corrosion and the corrosion of metal, reduces metal and removes speed, improves the metallic surface quality.
Description of drawings
Figure 1A is after chemical mechanical polishing liquid polishing of the present invention, the opticmicroscope light field figure of aluminum metal surface pitting;
Figure 1B is after not adding the chemical mechanical polishing liquid polishing of metal corrosion inhibitor, the opticmicroscope light field figure of aluminum metal surface pitting, and wherein, the stain among the figure is spot corrosion.
Embodiment
Provide preferred embodiment of the present invention below, describing technical scheme of the present invention in detail, but do not limit the present invention.
Embodiment 1
Chemical mechanical polishing liquid 1:5wt% silica dioxide granule, 0.1wt% benzotriazole, 0.5wt% succsinic acid, 0.01wt% ammonium molybdate and other are water, and pH is 4.25.
Embodiment 2
Chemical mechanical polishing liquid 2:5wt% silica dioxide granule, 0.1wt% benzotriazole, 0.5wt% succsinic acid, 0.1wt% ammonium molybdate, other is water, and pH is 4.25.
Embodiment 3
Chemical mechanical polishing liquid 3:5wt% silica dioxide granule, 0.5wt% succsinic acid, 0.5wt% amine molybdate ammonium, other is water, and pH is 4.25.
Embodiment 4
Chemical mechanical polishing liquid 4:1wt% cerium oxide particles, 10wt% potassium permanganate, 10wt% hydrogen peroxide, 0.001wt% polyvinyl alcohol, 10wt% succsinic acid, 5wt% glycerol, water are surplus, and pH is 3.
Embodiment 5
The iron nitrate of chemical mechanical polishing liquid 5:10wt% alumina particle, 1wt% water glass, 1wt%, the fatty alcohol-polyoxyethylene ether of 10wt%, 0.1wt% ethylenediamine tetraacetic acid (EDTA), water are surplus, and pH is 5.
Embodiment 6
The alkylol amide of chemical mechanical polishing liquid 6:2wt% titanium dioxide granule, 5wt% potassiumchromate, 0.5wt% hydrogen peroxide, 0.05wt%, the citric acid of 0.5wt%, 10wt% glycerol, water are surplus, and pH is 6.
Embodiment 7
Chemical mechanical polishing liquid 7:5wt% silica dioxide granule, 1wt% ammonium molybdate, water are surplus, and pH is 7.
Embodiment 8
Chemical mechanical polishing liquid 8:5wt% silica dioxide granule, 0.1wt% benzotriazole, 0.5% ethylenediamine tetraacetic acid (EDTA), 0.1wt% ammonium molybdate, 1wt% hydrogen peroxide, other is water, and pH is 3.
The comparative example 1
Chemical mechanical polishing liquid 1 ': 5wt% silica dioxide granule, 0.1wt% benzotriazole, 0.5wt% succsinic acid and other are water, and pH is 4.25.
Effect embodiment 1
With above-mentioned chemical mechanical polishing liquid 1 ', 1～3 metallic aluminium film that is used on the polished wafer.Parameter during polishing is: the rotating speed 102rpm of overdraft 2psi, polishing disk, rubbing head rotating speed 110rpm, polishing slurries flow velocity 100ml/min.Experimental result sees Table 1.
Table 1
The result shows: the chemical mechanical polishing liquid that contains metal corrosion inhibitor of the present invention can reduce the speed of removing of aluminium, all is lower than 200A/min; Metallic surface zero defect after the polishing, thus the metallic surface quality improved greatly.
Effect embodiment 2
With above-mentioned chemical mechanical polishing liquid 1 ' and 1 metallic aluminium film that is used on the polished wafer.Parameter during polishing is the rotating speed of overdraft: 2psi, polishing disk: 102rpm, rubbing head rotating speed: 110rpm, polishing slurries flow velocity: 100ml/min.Experimental result is seen Figure 1A and Figure 1B.
Experimental result shows: use the aluminum metal surface after the chemical mechanical polishing liquid that contains metal corrosion inhibitor of the present invention polishes not have spot corrosion (Figure 1A), and use the aluminum metal surface after the chemical mechanical polishing liquid polishing that does not contain metal corrosion inhibitor that a large amount of spot corrosion (Figure 1B) is arranged.So, use the chemical mechanical polishing liquid that contains metal corrosion inhibitor of the present invention can improve the aluminum metal surface quality greatly.
Effect embodiment 3
With above-mentioned chemical mechanical polishing liquid 1 ', 1～3 wafer that polishes the pattern of forming by aluminium and silicon-dioxide respectively.Parameter during polishing is: the rotating speed 102rpm of overdraft 2psi, polishing disk, rubbing head rotating speed 110rpm, polishing slurries flow velocity 100ml/min.Experimental result sees Table 2.
Table 2
Experimental result shows: chemical mechanical polishing liquid of the present invention not only can the polishing metal wafer, but also can polish the wafer that contains pattern, the wafer of the pattern of forming as aluminium, copper or tantalum and silicon-dioxide.
Effect embodiment 4
Above-mentioned chemical mechanical polishing liquid 8 is carried out copper film on the polished wafer.Parameter during polishing is the rotating speed of overdraft: 2psi, polishing disk: 102rpm, rubbing head rotating speed: 110rpm, polishing slurries flow velocity: 100ml/min.
Used raw material is domestic among the above embodiment all a sale.
Claims (5)
1. chemical mechanical polishing liquid, comprise at least a abrasive grains and a kind of carrier, it is characterized in that: also comprise at least a metal corrosion inhibitor and complexing agent, wherein said metal corrosion inhibitor is a chromic salt, permanganate, silicate, tungstate and/or heteropolyacid salt, described complexing agent is a succsinic acid, oxalic acid, citric acid, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, ethylenediamine tetraacetic acid (EDTA) and/or tannic acid, wherein the mass concentration of abrasive grains is 1～10%, the mass concentration of metal corrosion inhibitor is 0.01～10%, the mass concentration of described complexing agent is 0.01～10%, and carrier is a surplus.
2. chemical mechanical polishing liquid according to claim 1 is characterized in that this carrier is a water.
3. chemical mechanical polishing liquid according to claim 1 is characterized in that this carrier is water and polyvalent alcohol.
4. chemical mechanical polishing liquid according to claim 1 is characterized in that also comprising in membrane-forming agent, oxygenant and the pH regulator agent one or more.
5. the purposes of chemical mechanical polishing liquid as claimed in claim 1 in polishing metal or metallic compound is characterized in that described metal or metallic compound are aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or golden.
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| CN2005100279881A CN1900206B (en) | 2005-07-21 | 2005-07-21 | Chemical and mechanical polishing liquid and its use |
| PCT/CN2006/001703 WO2007009366A1 (en) | 2005-07-21 | 2006-07-17 | Chemical and mechanical polishing composition and its uses |
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| CN2005100279881A CN1900206B (en) | 2005-07-21 | 2005-07-21 | Chemical and mechanical polishing liquid and its use |
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| CN101906270A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Chemically-mechanical polishing solution |
| CN102268332B (en) * | 2010-06-01 | 2012-10-03 | 中国科学院上海微系统与信息技术研究所 | Cleaning liquid for phase change material after polishing |
| CN102453439B (en) * | 2010-10-22 | 2015-07-29 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
| CN102559056B (en) * | 2010-12-16 | 2015-06-17 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing alloy phase change materials |
| US20130045599A1 (en) * | 2011-08-15 | 2013-02-21 | Rohm and Electronic Materials CMP Holdings, Inc. | Method for chemical mechanical polishing copper |
| CN104745084B (en) * | 2013-12-25 | 2018-09-14 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and application method for aluminium |
| CN105729065A (en) * | 2016-03-16 | 2016-07-06 | 芜湖东光大华机械制造有限公司 | Surface treatment process for flywheel production |
| CN117198858A (en) | 2018-02-05 | 2023-12-08 | 富士胶片株式会社 | Chemical solution, method for producing chemical solution, and method for treating substrate |
| CN109321141B (en) * | 2018-11-02 | 2019-12-03 | 山东天岳先进材料科技有限公司 | A method of preparing the stability-enhanced silicon carbide chemical mechanical polishing liquid of pH |
| CN114481286A (en) * | 2021-12-28 | 2022-05-13 | 广东省科学院化工研究所 | Solid particles for electrolytic polishing |
| CN114525512B (en) * | 2022-01-25 | 2024-06-25 | 深圳市拍档科技有限公司 | Recyclable titanium alloy mirror polishing solution and preparation method thereof |
| CN115449302A (en) * | 2022-09-20 | 2022-12-09 | 江西鑫铂瑞科技有限公司 | Use method of novel polishing solution for electrolytic copper foil cathode titanium roller |
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| CN1329118A (en) * | 2000-06-21 | 2002-01-02 | 普莱克斯S.T.技术有限公司 | Polishing composition and polishing method |
| CN1468446A (en) * | 2000-08-30 | 2004-01-14 | 微米技术股份有限公司 | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
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| JPH0781133B2 (en) * | 1992-05-06 | 1995-08-30 | 株式会社フジミインコーポレーテッド | Composition for polishing memory hard disk |
| JP3106339B2 (en) * | 1994-02-04 | 2000-11-06 | 株式会社フジミインコーポレーテッド | Polishing composition |
| TWI296006B (en) * | 2000-02-09 | 2008-04-21 | Jsr Corp |
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| CN1329118A (en) * | 2000-06-21 | 2002-01-02 | 普莱克斯S.T.技术有限公司 | Polishing composition and polishing method |
| CN1468446A (en) * | 2000-08-30 | 2004-01-14 | 微米技术股份有限公司 | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
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| WO2007009366A1 (en) | 2007-01-25 |
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