CN100522478C - Double-side polishing method for gallium phosphide wafer - Google Patents
Double-side polishing method for gallium phosphide wafer Download PDFInfo
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- CN100522478C CN100522478C CNB2006101125137A CN200610112513A CN100522478C CN 100522478 C CN100522478 C CN 100522478C CN B2006101125137 A CNB2006101125137 A CN B2006101125137A CN 200610112513 A CN200610112513 A CN 200610112513A CN 100522478 C CN100522478 C CN 100522478C
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Abstract
A double-side polishing method of a gallium phosphide wafer comprises the following steps: (1) and cleaning: ultrasonically cleaning the wafer in a cleaning solution at the temperature of 50-100 ℃; (2) and sticking a patch; (3) and polishing the phosphor surface: placing the cooled polishing disk on polishing cloth, fixing the polishing disk by a polishing arm, polishing under the conditions that the polishing pressure is 10-50psi, the flow of polishing solution is 10-40ml/min and the temperature is 5-25 ℃, and flushing water after the thickness is qualified; (4) removing the sheet, sticking the sheet and polishing the other surface; (5) and cleaning and checking. The invention has the advantages that: the method is simple and practical, the operability is strong, the used chemical reagent is low in cost and material, the harm to the environment and human bodies is avoided, and the polishing yield is over 85 percent. The total thickness change of the gallium phosphide polished wafer polished by the method is not more than 6 mu m, the warping degree is not more than 25 mu m, the flatness of the wafer surface is not more than 5 mu m, and the defects of contamination, fog, scratches, particles, cracks, orange peel, crow feet and the like are not detected under corresponding light sources.
Description
Technical field
The present invention relates to a kind of gallium phosphide (111) wafer twin polishing method, particularly a kind of diameter 50.8mm gallium phosphide (111) wafer twin polishing method that is applicable to.
Background technology
Monocrystal of gallium phosphide is that large-scale production is red, the main backing material of green LED at present, gallium phosphide is the III one V group iii v compound semiconductor material that output is only second to GaAs, but so far, still not having phosphatization (111) wafer twin polishing method article delivers, therefore, in order to satisfy the industry of domestic development compound semiconductor, expand gallium phosphide crystal market, be necessary to provide a kind of gallium phosphide (111) wafer twin polishing method of large-size.
Summary of the invention
The purpose of this invention is to provide a kind of gallium phosphide (111) wafer twin polishing method, this method is simple and practical, workable, can process high-quality gallium phosphide polished wafer in enormous quantities, the polishing yield rate is more than 85%, employed chemical reagent is a lower cost materials, and cleaning agent, polishing waste liquid are easy to handle, and can not work the mischief to environment and human body.
For achieving the above object, the present invention by the following technical solutions: this two-sided polishing method for gallium phosphide crystal plate, it may further comprise the steps: (1), clean: ultrasonic cleaning wafer in cleaning fluid, cleaning temperature is between 50～100 ℃; (2), paster: on the face of polishing disk, wax, on the wax face, paste thin paper, with the oven dry polished wafer phosphorus towards on be attached on the waxdip thin paper, use unidimensional polishing disk vertical platen again; (3), phosphorus mirror polish: cooled polishing disk is put on the polishing cloth, fixing polishing disk with polishing arm, is 10～50Psi at polish pressure, and the flow of polishing fluid is 10～30ml/min, temperature is to polish under 5～25 ℃, wafer surface, thickness qualified back bath; (4), go sheet, bonding die and polishing: polishing disk is heated, and removes sheet, and (2) step of repetition faces up gallium and is affixed on the polishing disk, repeats for (3) step and carries out the another side polishing; (5), clean check, with the cleaning fluid ultrasonic cleaning of the qualified wafer of polishing, use pure water rinsing again, wafer is put into hot sulfuric acid corroded 1～3 minute, temperature is 80～100 ℃, soaks in the cold alkali 1～3 minute, temperature is 0 ℃, and water dashes, dries subsequently, detects polished surface.
Technological process of the present invention: wafer cleans → has wax paster → phosphorus mirror polish → go sheet, bonding die and polishing (gallium face) → wafer cleaning → detection packing
Employed cleaning agent is magnificent star DZ-4B (trade mark), is to clean the special use of semiconductor electronic material, and polishing fluid is the suspension of using by Japanese FUJIMI company produces, the polishing powder of INSEC P model (being specifically designed to the polishing gallium phosphide crystal) is mixed with.
The present invention adopts cmp method, CMP process is machinery and the chemical process of balance mutually, the process of polishing is: the polishing fluid that is adsorbed on the polishing cloth acts on wafer surface, chemism component and wafer surface generation chemical reaction, utilize polishing cloth, polishing disk to rotate simultaneously the wafer surface of chemically reactive is carried out grinding, the wafer surface of not after chemical reaction is exposed in the polishing fluid again.Obtain the measured polished silicon wafer of matter, must make chemical attack effect and mechanical grinding effect in the polishing process reach a kind of balance.If chemical attack greater than mechanical grinding, can form phenomenons such as etch pit, tangerine peel, ripple in wafer surface; Draw road, woven design and produce high damage layer if mechanical grinding greater than chemical attack, can form on the surface.
Advantage of the present invention is: method is simple and practical, and is workable, employed chemical reagent lower cost materials, the polishing waste liquid should recycle, can not work the mischief to environment and human body, can process high-quality gallium phosphide polished wafer in enormous quantities, the polishing yield rate is more than 85%.Be not more than 6um by this method polishing gained gallium phosphide polished wafer total thickness variations, angularity is not more than 25um, and the crystal face flatness is not more than 5um, does not all detect contamination, mist under respective sources, draw road, particle, splits, defectives such as orange peel, crow pawl.
The specific embodiment
(1), cleans: will inject pure water in the glass guide channel, add DZ-4B semiconductor scavenger specially and be mixed with the cleaning fluid that concentration is 10wt%-50wt%, cleaning fluid is heated to 50-100 ℃, after wafer will be housed the gaily decorated basket put into cleaning fluid and carry out ultrasonic wave and clean, general setting ultrasonic wave scavenging period is 10-30min, should constantly carry evenly in the cleaning and fall the gaily decorated basket, and wafer is fully cleaned, immediately the gaily decorated basket is put into warm water behind to be cleaned the finishing and wash, washing time is 5-10min.The container plastic bag sealing of cleaning fluid is housed, can be used for doing second time cleaning, at last with the polishing fluid dilution discharge.
(2), the wax paster is arranged: polishing disk is placed on the electric furnace heat, the polishing disk surface temperature is coated with even circular wax layer all around on its card in the time of 30-60 ℃, the shut-off circuit switch, prevent wax volatilization or overflow, then with diameter 50.8mm thin paper card on the wax face, with the oven dry polished wafer phosphorus towards on be attached on the waxdip thin paper, with another same size polishing disk vertical platen, during platen action should be slowly and the perpendicular alignmnet polishing disk in order to avoid wafer is offset, could guarantee that like this paster is firm.
(3), phosphorus mirror polish: configuration polishing fluid (FUJIMI INSEC P powder: pure water (1-5): (5-100)) { remarks: this ratio is a mass ratio }, put under the ultrasonic wave normal temperature glass guide channel that fills polishing fluid ultrasonic, make and do not have granule in the polishing fluid, ultrasonic time is generally 10-30min, simultaneously that polishing cloth is moistening, to its correction, again cooled polishing disk is put on the polishing cloth, utilize polishing arm that polishing disk is fixed on the polishing cloth, the setting polish pressure is 5-50Psi, the temperature of polishing fluid be controlled at 5-25 ℃ comparatively suitable, the polishing fluid flow set is 10-30ml/min, presses start button and begins polishing, and polishing velocity is at 10-30um/hr, every polishing 10-30 minutes is checked the surface once under light diffuser, prevent that mechanical grinding or chemical attack are overweight and cause high damage layer.Wait to finish the back and take out the polishing disk bath, measure thickness, treat thickness qualified back bath, prepare to unload dish, then heavily throw as defective.Polishing fluid enters in the fixed container, and post precipitation discharges liquid diluting, and recycling precipitate is handled.
(4), remove sheet, bonding die and polishing (gallium face): polishing disk is placed on the electric furnace heats, wait to observe wafer and prepare to go sheet on every side when the wax layer begins to melt, treat after wafer can move electric furnace to be cut off the power supply, touch wafer to a small size filter paper with wood chip, again eyeglass is put into the gaily decorated basket, be used for clean gauze wiping polishing card, repeating second one step process faces up gallium and is affixed on the polishing disk, repeated for the 3rd step the gallium face is polished (changing mirror polish), during polishing pressure heightened 5-10psi (with first mirror polish time pressure compare), the polishing fluid flow is brought up in 20-40ml/min scope.
(5), clean check: the wafer that will the carry out twin polishing gaily decorated basket of packing into, be placed on temperature and be 50 ℃-100 ℃, concentration and be ultrasonic cleaning in the cleaning fluid of 10wt%-30wt%, time is 10-50min, then place pure water to wash the gaily decorated basket, flushing is advisable to loseing foam, the container plastic bag sealing of cleaning fluid is housed, can be used for doing second time cleaning, at last with the polishing fluid dilution discharge.Corroded 1 minute at the hot sulfuric acid of wafer being put into 80 ℃-100 ℃, taking out rapidly wafer all immersed in the normal temperature sulfuric acid 1 second, again wafer is put into cold alkali (about 0 ℃) 1-2min, taking out the wafer bath dries, place high strength to converge under the light source wafer, rock polished silicon wafer and estimate whole polished surface, detection has or not contamination, mist, draws road, particle, again to the large tracts of land scattering light source detect down the edge bang split, orange peel, crow pawl, crackle, groove, ripple, pitting, hillock, tool marks, striped etc., the wafer package through detecting like this is also labelled.Employed acid-base reagent all neutralizes and dilutes the back discharging.
Embodiment 1:
(1) compound concentration is 15% cleaning fluid, is heated to 50 ℃, and the gaily decorated basket that wafer then will be housed was put into ultrasonic cleaning 10 minutes, fully flushing;
(2) when 40 ℃ of polishing disk surface temperatures, carry out paster;
Pure water 1:10), and ultrasonic 30 minutes (3) preparation polishing fluid (FUJIMI INSEC P powder:; Polishing machine force value 10psi is set, and polishing fluid flow 40ml/min polishes.
(4) other conditions of polishing are constant behind the reverse side sets 20psi with the polish pressure value, and the polishing fluid flow is 30ml/min.
(5) be 20% in concentration, temperature is ultrasonic cleaning 20 minutes in 70 ℃ the cleaning fluid, fully bath, corrosion 2 minutes in 80 ℃ of hot acids was again soaked 1 minute in the cold alkali.
Experimental result: dry the back and observe wafer surface, find that white point is more, a small amount of etch pit should be turned the polishing fluid flow down or strengthen polish pressure.
Embodiment 2:
(1) compound concentration is 20% cleaning fluid, is heated to 50 ℃, and the gaily decorated basket that wafer then will be housed was put into ultrasonic cleaning 10 minutes, fully flushing;
(2) when 40 ℃ of polishing disk surface temperatures, carry out paster;
Pure water 3:20), and ultrasonic 30 minutes (3) preparation polishing fluid (FUJIMI INSEC P powder:; Polishing machine force value 30psi is set, and polishing fluid flow 10ml/min polishes.
(4) other conditions of polishing are constant behind the reverse side sets 20psi with the polish pressure value, and the polishing fluid flow is 10ml/min.
(5) be 20% in concentration, temperature is ultrasonic cleaning 20 minutes in 100 ℃ the cleaning fluid, fully bath, corrosion 3 minutes in 80 ℃ of hot acids was again soaked 2 minutes in the cold alkali (ammoniacal liquor).
Experimental result: wafer surface has trickle stroke of road, should be that mechanical grinding causes, and polish pressure or polishing fluid flow are suitably adjusted in suggestion.
Claims (6)
1, a kind of two-sided polishing method for gallium phosphide crystal plate, it is characterized in that: it may further comprise the steps:
(1), clean: ultrasonic cleaning wafer in cleaning fluid, cleaning temperature is between 50～100 ℃;
(2), paster: on the face of polishing disk, wax, on the wax face, paste thin paper, with the oven dry polished wafer phosphorus towards on be attached on the waxdip thin paper, use unidimensional polishing disk vertical platen again;
(3), phosphorus mirror polish: cooled polishing disk is put on the polishing cloth, fixing polishing disk with polishing arm, is 10～50Psi at polish pressure, and the flow of polishing fluid is 10～30ml/min, temperature is to polish under 5～25 ℃, wafer surface, thickness qualified back bath;
(4), go sheet, bonding die and polishing: polishing disk is heated, and removes sheet, and (2) step of repetition faces up gallium and is affixed on the polishing disk, repeats for (3) step and carries out the another side polishing;
(5), clean check, with the cleaning fluid ultrasonic cleaning of the qualified wafer of polishing, use pure water rinsing again, wafer is put into hot sulfuric acid corroded 1～3 minute, temperature is 80～100 ℃, soaks in the cold alkali 1～3 minute, temperature is 0 ℃, and water dashes, dries subsequently, detects polished surface.
2, a kind of two-sided polishing method for gallium phosphide crystal plate according to claim 1, it is characterized in that: described concentration of lotion is: 10wt%～50wt%.
3, a kind of two-sided polishing method for gallium phosphide crystal plate according to claim 1 and 2 is characterized in that: polishing velocity is 10～30um/hr.
4, a kind of two-sided polishing method for gallium phosphide crystal plate according to claim 1 and 2 is characterized in that: cold alkali is ammoniacal liquor.
5, a kind of two-sided polishing method for gallium phosphide crystal plate according to claim 3 is characterized in that: cold alkali is ammoniacal liquor.
6, a kind of two-sided polishing method for gallium phosphide crystal plate according to claim 1 and 2 is characterized in that: when described another side polished, its polish pressure improved 5～10psi than the first mirror polish pressure, and the flow of polishing fluid strengthens 5～10ml/min.
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| CNB2006101125137A CN100522478C (en) | 2006-08-22 | 2006-08-22 | Double-side polishing method for gallium phosphide wafer |
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Cited By (1)
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| CN102554750A (en) * | 2010-12-29 | 2012-07-11 | 北京有色金属研究总院 | Double-surface polishing method for gallium antimonide wafer |
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| CN101661869B (en) * | 2008-08-25 | 2012-06-13 | 北京有色金属研究总院 | Method for cleaning polished gallium arsenide chip |
| CN101829946B (en) * | 2010-05-28 | 2013-01-09 | 江苏南晶红外光学仪器有限公司 | Technology for machining two surfaces of infrared window piece |
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| CN102240967A (en) * | 2011-06-24 | 2011-11-16 | 中国科学院福建物质结构研究所 | Zinc oxide single crystal polishing technology for substrate of photoelectric device |
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