CN104409582A - LED (light-emitting diode) wafer pasting method - Google Patents

LED (light-emitting diode) wafer pasting method Download PDF

Info

Publication number
CN104409582A
CN104409582A CN201410660175.5A CN201410660175A CN104409582A CN 104409582 A CN104409582 A CN 104409582A CN 201410660175 A CN201410660175 A CN 201410660175A CN 104409582 A CN104409582 A CN 104409582A
Authority
CN
China
Prior art keywords
wax
wafer
paraffin paper
ceramic disk
suction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410660175.5A
Other languages
Chinese (zh)
Inventor
陈冲
陈晓刚
周峰
靳彩霞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AQUALITE OPTOELECTRONICS Co Ltd
Aqualite Co Ltd
Original Assignee
AQUALITE OPTOELECTRONICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AQUALITE OPTOELECTRONICS Co Ltd filed Critical AQUALITE OPTOELECTRONICS Co Ltd
Priority to CN201410660175.5A priority Critical patent/CN104409582A/en
Publication of CN104409582A publication Critical patent/CN104409582A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes

Abstract

The invention is suitable for the LED (light-emitting diode) production field and provides an LED wafer pasting method. The LED wafer pasting method comprises the following steps of: placing wax on a ceramic plate, and keeping the wax in a liquid state by heating; regularly placing wafers on the ceramic plate covered with the liquid-state wax; covering wax-absorbing paper on wafers; tabletting and removing the wax-absorbing paper after the wax is cured. The wax-absorbing paper is arranged before tabellting, so that the extra operation of manually scraping wax is needed in the prior art is avoided, the labor cost is reduced, and the wafer pasting efficiency is improved in a wafer grinding process.

Description

A kind of method of LED wafer bonding die
Technical field
The invention belongs to LED production field, particularly relate to a kind of method of LED wafer bonding die.
Background technology
The semiconductor LED manufacture process of prior art generally includes: after completing wafer preceding working procedure, need carry out thinning to wafer, according to the difference that different LED product requires for wafer, the thickness that thinning one-tenth is different, guarantee that wafer thickness meets the requirements, split operation to carry out follow-up stroke.Wherein, thinning process comprises and carries out bonding die, corase grind, polishing, cleaning and load operation to wafer.
In tradition LED manufacture process, the bonding die operation of wafer all adopts paraffin paper, but, on the one hand because of cleanliness factor and the uniformity of paraffin paper, occur after easily causing wafer bonding die secretly splitting and wafer bigger error; Need artificial paraffin cutting on the other hand, add production cost, reduce production efficiency.
Summary of the invention
The object of the embodiment of the present invention is a kind of method providing LED wafer bonding die, needs artificial paraffin cutting, add production cost, reduce the problem of production efficiency to solve prior art.
On the one hand, the embodiment of the present invention provides a kind of method of LED wafer bonding die, said method comprising the steps of:
Wax is positioned on ceramic disk, and keeps wax to be in liquid state by heating; Being positioned over of wafer rule is coated with on the ceramic disk of liquid wax; Suction paraffin paper is covered in above wafer; Carry out compressing tablet operation, after wax solidification, remove suction paraffin paper.
On the other hand, the beneficial effect of the method for a kind of LED wafer bonding die that the embodiment of the present invention provides comprises: be positioned on ceramic disk by wax, and keeps wax to be in liquid state by heating; Being positioned over of wafer rule is coated with on the ceramic disk of liquid wax; Suction paraffin paper is covered in compressing tablet panel surface; Carry out compressing tablet operation, after wax solidification, remove suction paraffin paper.
The embodiment of the present invention by arranging suction paraffin paper before compressing tablet operation, thus avoids in prior art the operation bidirectional needing artificial paraffin cutting, decreases cost of labor, improves in grinding wafer process, the efficiency of wafer bonding die operation.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the flow chart of the method for a kind of LED wafer bonding die that the embodiment of the present invention provides;
Fig. 2 is the flow chart of the method for a kind of LED wafer bonding die that the embodiment of the present invention provides;
Fig. 3 is the flow chart of the method for a kind of LED wafer bonding die that the embodiment of the present invention provides;
Fig. 4 is the vertical view that layout that the embodiment of the present invention provides has the ceramic disk of discrete wafer;
Fig. 5 is a kind of end view being in compressing tablet operation that the embodiment of the present invention provides;
Fig. 6 is a kind of end view being in compressing tablet operation that the embodiment of the present invention provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Embodiment one
Be illustrated in figure 1 the flow chart of the method for a kind of LED wafer bonding die provided by the invention, said method comprising the steps of:
In step 202., wax is positioned on ceramic disk, and keeps wax to be in liquid state by heating.
Wherein, when the mode of paraffin paper is set in employing prior art, one deck paraffin paper can be padded between wax and ceramic disk again, as shown in Figure 5.
Wherein, when employing does not use paraffin paper of the prior art, described wax, when purchasing, just will, through quality testing, confirm wherein not comprise the impurity that crystal column surface may be caused to wear and tear.
In specific implementation, the mode that wax can adopt perfusion or spray, is positioned on ceramic disk.
In step 204, being positioned over of wafer rule is coated with on the ceramic disk of liquid wax.
Be utilize vacuum cup under normal circumstances, wafer is drawn onto on ceramic disk.Certainly mechanical arm is utilized also can to realize based on the mode of drag and drop.Also can be the mode adopting mould, wafer is first placed on corresponding mould, then move on described ceramic disk together.Above-mentioned several mode is only a kind of citing, and other placement wafer mode, also belongs to protection scope of the present invention.
In step 206, suction paraffin paper is covered in above wafer.
This suction paraffin paper can be the filter paper of testing at ordinary times, also can be the dust-free paper of external import, can also be that other inhale wax effect preferably material.
In a step 208, carry out compressing tablet operation, after wax solidification, remove suction paraffin paper.
Compressing tablet operation makes wafer smooth, sane to be bonded on ceramic disk, and the wax of solidification then plays the effect that fixing wafer makes it not move left and right, and its level design sketch as shown in Figure 6.
In specific implementation, typically use the wafer on compressing tablet dish extruding ceramic porcelain dish, and after maintenance has tens seconds, stop the heating that ceramic disk is waxed gradually, so that the wax on ceramic disk solidifies.
The embodiment of the present invention by arranging suction paraffin paper before compressing tablet operation, thus avoids in prior art the operation bidirectional needing artificial paraffin cutting, decreases cost of labor, improves in grinding wafer process, the efficiency of wafer bonding die operation.
You need to add is that, if also related to the words of placing paraffin paper in prior art before placing wafer, because paraffin paper itself exists elasticity, staff may cause the existence of air between paraffin paper and ceramic disk when placing, thus causes potential risks to follow-up compressing tablet operation.Such as: if in prior art placement wafer before also relate to place paraffin paper, due to paraffin paper in put procedure between meeting and ceramic disk the air of production capacity cannot overflow, cause paraffin paper to be difficult to pave thus finally adverse influence caused to wafer thickness.
Embodiment two
Be illustrated in figure 2 the flow chart of the method for a kind of LED wafer bonding die that the embodiment of the present invention provides, compare embodiment one, which increase the filtration treatment flow process of one wax, as shown in Figure 2, the embodiment of the method for a kind of LED wafer bonding die provided by the invention comprises:
In step 201, wax is carried out filtering and purification processes, make there is not the impurity that crystal column surface can be caused to wear and tear in the wax after processing.
In step 202., wax is positioned on ceramic disk, and keeps wax to be in liquid state by heating.
In step 204, being positioned over of wafer rule is coated with on the ceramic disk of liquid wax.
In step 206, suction paraffin paper is covered in above wafer.
In a step 208, carry out compressing tablet operation, after wax solidification, remove suction paraffin paper.
Compressing tablet operation makes wafer smooth, sane to be bonded on ceramic disk, and the wax of solidification then plays the effect that fixing wafer makes it not move left and right, and its level design sketch as shown in Figure 6.
In embodiments of the present invention, because increase the filtration of wax and purification processes, thus after compensate for and removing prior art paraffin paper protective layer, due to impurity between wafer and ceramic disk, cause scratch and the wearing and tearing of crystal column surface in compressing tablet operation.Further, also reach under avoiding paraffin paper to there is situation, because the problem of paraffin paper density and quality, make compressing tablet operation cannot realize smooth and sane being fixed on ceramic disk of wafer.
Except in embodiment one and embodiment two except disclosed content, also there is a kind of improvement project based on above-described embodiment, specifically comprise: when wafer is discrete being positioned on ceramic disk, described being covered in by suctions paraffin paper above wafer also comprises before:
According to the cross-sectional area of wafer to be ground, inhale the suction wax characteristic of paraffin paper, the area of ceramic disk and be placed on the amount that ceramic disk waxes, calculate the size being covered in paraffin paper in single-wafer, and size cuts out the multiple suction paraffin paper of a work for being covered on described wafer according to this, and the described suction paraffin paper cut out is covered on each wafer.
This improvement project, the cross section that take into account wafer to be ground glues the size of ceramic disk self card, thus the number of the remaining liquid wax of ceramic card after step 204 places wafer can be calculated, and further based on the suction wax characteristic of inhaling paraffin paper with regard to one piece of wafer for adsorb its periphery liquid wax needed for suction paraffin paper area, thus cut out the suction paraffin paper customizing size for wafer.The described waste decreasing and inhale paraffin paper of improving one's methods, has saved production cost.
Embodiment three
Be illustrated in figure 3 the flow chart of the method for a kind of LED wafer bonding die that the embodiment of the present invention provides, the method can think the improvement of embodiment one or embodiment two, about the description of identical execution step, reference example one and embodiment two, do not repeat them here.As shown in Figure 3, the embodiment of the method for a kind of LED wafer bonding die provided by the invention comprises:
In step 302, wax is positioned on ceramic disk, and keeps wax to be in liquid state by heating.
In step 304, being positioned over of wafer rule is coated with on the ceramic disk of liquid wax.
Within step 306, suction paraffin paper is covered in compressing tablet panel surface.
In step 308, carry out compressing tablet operation, after wax solidification, remove suction paraffin paper.
In the embodiment of the present invention three, further contemplate and inhale paraffin paper when being covered on wafer, impurity may be dropped in liquid wax, and described impurity moves between wafer and ceramic disk when compressing tablet operation, finally may cause the wearing and tearing of crystal column surface.Therefore, the present embodiment changes in prior art that to inhale paraffin paper be all the conventional thinking of placing on wafer, is directly covered on compressing tablet dish by suction paraffin paper, thus avoids and inhale the impurity that may exist in paraffin paper and be deposited to if having time on wafer and ceramic disk interface.
Embodiment four
For a more clear understanding of the present invention, the present embodiment four, by the design sketch in concrete example bonding die process, sets forth feature of the present invention further.As described in Figure 4, being the mode (vertical view) of layout wafer 12 discrete on ceramic disk 14, can also be transverse direction and/or longitudinal arrangement in specific implementation.
Be illustrated in figure 5 the liner adopting paraffin paper 10 to do wafer 12, and use suction paraffin paper 16, be in the end view of compressing tablet operation.
Be illustrated in figure 6 and do not adopt paraffin paper 10, but employ suction paraffin paper 16, be in the end view of compressing tablet operation.
Preferably, the wafer bonding die process related in the various embodiments described above completes in dustfree environment, such as: industrial dust free room.
Those of ordinary skill in the art it is also understood that, the all or part of step realized in above-described embodiment method is that the hardware that can carry out instruction relevant by program has come, described program can be stored in a computer read/write memory medium, described storage medium, comprises ROM/RAM, disk, CD etc.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims (6)

1. a method for LED wafer bonding die, is characterized in that, described method comprises:
Wax is positioned on ceramic disk, and keeps wax to be in liquid state by heating;
Being positioned over of wafer rule is coated with on the ceramic disk of liquid wax;
Suction paraffin paper is covered in above wafer;
Carry out compressing tablet operation, after wax solidification, remove suction paraffin paper.
2. the method for claim 1, is characterized in that, described wax, before being positioned on ceramic disk, carry out purification processes, disposes the impurity that wherein can cause wearing and tearing to crystal column surface.
3. method as claimed in claim 1 or 2, it is characterized in that, described bonding die process completes in dustfree environment.
4. the method as described in as arbitrary in claim 1-3, is characterized in that, when wafer is discrete being positioned on ceramic disk, described suction paraffin paper is covered in above wafer before also comprise:
According to the cross-sectional area of wafer to be ground, inhale the suction wax characteristic of paraffin paper, the area of ceramic disk and be placed on the amount that ceramic disk waxes, calculate the size being covered in paraffin paper in single-wafer, and size cuts out the multiple suction paraffin paper of a work for being covered on described wafer according to this, and the described suction paraffin paper cut out is covered on each wafer.
5. a method for LED wafer bonding die, is characterized in that, described method comprises:
Wax is positioned on ceramic disk, and keeps wax to be in liquid state by heating;
Being positioned over of wafer rule is coated with on the ceramic disk of liquid wax;
Suction paraffin paper is covered in compressing tablet panel surface;
Carry out compressing tablet operation, after wax solidification, remove suction paraffin paper.
6. method as claimed in claim 5, it is characterized in that, described wax, before being positioned on ceramic disk, carry out purification processes, disposes the impurity that wherein can cause wearing and tearing to crystal column surface.
CN201410660175.5A 2014-11-19 2014-11-19 LED (light-emitting diode) wafer pasting method Pending CN104409582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410660175.5A CN104409582A (en) 2014-11-19 2014-11-19 LED (light-emitting diode) wafer pasting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410660175.5A CN104409582A (en) 2014-11-19 2014-11-19 LED (light-emitting diode) wafer pasting method

Publications (1)

Publication Number Publication Date
CN104409582A true CN104409582A (en) 2015-03-11

Family

ID=52647195

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410660175.5A Pending CN104409582A (en) 2014-11-19 2014-11-19 LED (light-emitting diode) wafer pasting method

Country Status (1)

Country Link
CN (1) CN104409582A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105590996A (en) * 2016-02-23 2016-05-18 河源市众拓光电科技有限公司 Method of preventing corrosion of vertical structure LED substrate during wet stripping process
CN110098286A (en) * 2018-01-29 2019-08-06 山东浪潮华光光电子股份有限公司 A kind of pasting method in the LED wafer substrate thinning of simplicity
CN111211040A (en) * 2020-01-09 2020-05-29 映瑞光电科技(上海)有限公司 Wafer thinning method, jig and waxing device
CN115635379A (en) * 2022-12-08 2023-01-24 中国电子科技集团公司第四十六研究所 Aluminum nitride single crystal substrate processing method
CN117810156A (en) * 2024-02-23 2024-04-02 中国电子科技集团公司第四十六研究所 Wafer bonding method and wafer bonding device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994205A (en) * 1997-02-03 1999-11-30 Kabushiki Kaisha Toshiba Method of separating semiconductor devices
TW544777B (en) * 2002-08-20 2003-08-01 Advanced Wireless Semiconducto Residual wax removal process for thin wafer and apparatus thereof
CN101130229A (en) * 2006-08-22 2008-02-27 北京有色金属研究总院 Double-side polishing method for gallium phosphide wafer
CN102779730A (en) * 2012-08-09 2012-11-14 合肥彩虹蓝光科技有限公司 Wax removal method for semiconductor wafer grinding process
CN103811595A (en) * 2012-11-15 2014-05-21 张恒 Waxing process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994205A (en) * 1997-02-03 1999-11-30 Kabushiki Kaisha Toshiba Method of separating semiconductor devices
TW544777B (en) * 2002-08-20 2003-08-01 Advanced Wireless Semiconducto Residual wax removal process for thin wafer and apparatus thereof
CN101130229A (en) * 2006-08-22 2008-02-27 北京有色金属研究总院 Double-side polishing method for gallium phosphide wafer
CN102779730A (en) * 2012-08-09 2012-11-14 合肥彩虹蓝光科技有限公司 Wax removal method for semiconductor wafer grinding process
CN103811595A (en) * 2012-11-15 2014-05-21 张恒 Waxing process

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105590996A (en) * 2016-02-23 2016-05-18 河源市众拓光电科技有限公司 Method of preventing corrosion of vertical structure LED substrate during wet stripping process
CN110098286A (en) * 2018-01-29 2019-08-06 山东浪潮华光光电子股份有限公司 A kind of pasting method in the LED wafer substrate thinning of simplicity
CN110098286B (en) * 2018-01-29 2020-05-08 山东浪潮华光光电子股份有限公司 Surface mounting method in thinning of LED wafer substrate
CN111211040A (en) * 2020-01-09 2020-05-29 映瑞光电科技(上海)有限公司 Wafer thinning method, jig and waxing device
CN115635379A (en) * 2022-12-08 2023-01-24 中国电子科技集团公司第四十六研究所 Aluminum nitride single crystal substrate processing method
CN117810156A (en) * 2024-02-23 2024-04-02 中国电子科技集团公司第四十六研究所 Wafer bonding method and wafer bonding device

Similar Documents

Publication Publication Date Title
CN104409582A (en) LED (light-emitting diode) wafer pasting method
CN103515250B (en) A kind of 75 μm of ultra-thin chip production methods
CN201559124U (en) Grinding head assembly cleaning device and chemical mechanical grinding device
JP2016127232A (en) Processing method of wafer
CN101144879A (en) Method for manufacturing optical element
TW202036763A (en) Method for cleaning capillary tube configured to be used in wire bonding machine
CN108356684A (en) A kind of semiconductor wafer polishing apparatus vacuum suction template and burnishing device
CN202367583U (en) Chemical-mechanical polishing device
CN110323183A (en) A method of 3D NAND wafer thin slice sliver is solved the problems, such as using laser ring cutting
US10804131B2 (en) Carrier plate removing method
CN201519904U (en) Chip stripping device
JP2011249499A (en) Wafer processing method
CN108207076A (en) A kind of method of glue more than solution communication IC Metal Substrate support plates
CN203245737U (en) Multifunctional grinding liquid supply structure and grinding device
CN108899268A (en) A kind of preprocess method improving the performance of wafer bonding technique bubble
CN102172878A (en) Method for polishing wafers
CN209007384U (en) The hand-held grinding cleaning abrading block of one kind
CN104155731B (en) A kind of adhering method of PLC chip
CN104029112A (en) Grinding method of chip reverse process
CN105415818A (en) Shoe sole board and production method thereof
CN201677237U (en) Lapping liquid storage device and lapping liquid supply system
CN202053157U (en) Grinding head, grinding pad trimmer and grinding device
CN203733770U (en) Tool used for wafer-level packaging technology
CN204954602U (en) Modified pottery structure of twining
JP2019029543A (en) Wafer grinding method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20180105

AD01 Patent right deemed abandoned