CN103811595A - Waxing process - Google Patents
Waxing process Download PDFInfo
- Publication number
- CN103811595A CN103811595A CN201210457559.8A CN201210457559A CN103811595A CN 103811595 A CN103811595 A CN 103811595A CN 201210457559 A CN201210457559 A CN 201210457559A CN 103811595 A CN103811595 A CN 103811595A
- Authority
- CN
- China
- Prior art keywords
- chip
- wax
- waxing
- ceramic disc
- nitrogen gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Abstract
The invention relates to a waxing process. The waxing process is characterized by comprising the steps of adjusting pressure of a nitrogen gun to 0.6MPa, enabling a muzzle of the nitrogen gun to be slantly opposite to the surface of a chip, and starting the nitrogen gun to blow the surface of the chip clean; heating a wax stick and a ceramic disc to 110 DEG C, coating the ceramic disc with wax in a dropped mode, and consuming 0.3g of wax per piece; enabling the chip to adhere to the ceramic disc, covering the chip with a certain number of dust-free paper, pressurizing the ceramic disc for 2min, and enabling pressure to be 0.6MPa; performing cooling to 40 DEG C, taking out the ceramic disc, and finishing the waxing. According to the process, waxing uniformity is further precisely guaranteed through the waxing temperature and pressure, the piece cracking rate can be effectively reduced, chip quality is guaranteed, and accordingly product profits are improved.
Description
Technical field
The present invention relates to a kind of Wax enhancement, belong to optoelectronic areas.
Background technology
In LED production field, in order to improve the heat radiation of chip, often need chip to carry out attenuate, and attenuate is very easy to originally to grind with regard to frangible chip, at present, conventionally before attenuate, chip is pasted on ceramic disk by specific attenuate wax, and Wax enhancement is not very perfect conventionally at present, therefore, in thinning process, still there is a large amount of fragments.
Summary of the invention
The present invention is directed to the deficiency that prior art exists, a kind of Wax enhancement is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of Wax enhancement, it is characterized in that, and described process is as follows:
(1) nitrogen gun pressure is adjusted to 0.6MPa, nitrogen gun muzzle, tiltedly to chip surface, is opened to nitrogen gun, chip surface is blown clean;
(2) rod wax and ceramic disk are heated to 110 ℃, then wax is dripped and is coated on ceramic disk, every consumes 0.3g wax;
(3) wafer is attached on ceramic disk to bedding dust-free paper, platen pressurization 2min, pressure 0.6MPa;
(4) be cooled to 40 ℃, take out ceramic disk, the end of waxing.
The invention has the beneficial effects as follows: wax temperature and pressure are further accurately guaranteed the uniformity of waxing by technique of the present invention, can effectively reduce sliver rate simultaneously, guaranteed the quality of chip, thereby improved the profit of product.
Embodiment
Below principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
A kind of Wax enhancement, is characterized in that, described process is as follows:
(1) nitrogen gun pressure is adjusted to 0.6MPa, nitrogen gun muzzle, tiltedly to chip surface, is opened to nitrogen gun, chip surface is blown clean;
(2) rod wax and ceramic disk are heated to 110 ℃, then wax is dripped and is coated on ceramic disk, every consumes 0.3g wax;
(3) wafer is attached on ceramic disk to bedding dust-free paper, platen pressurization 2min, pressure 0.6MPa;
(4) be cooled to 40 ℃, take out ceramic disk, the end of waxing.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (1)
1. a Wax enhancement, is characterized in that, described process is as follows:
(1) nitrogen gun pressure is adjusted to 0.6MPa, nitrogen gun muzzle, tiltedly to chip surface, is opened to nitrogen gun, chip surface is blown clean;
(2) rod wax and ceramic disk are heated to 110 ℃, then wax is dripped and is coated on ceramic disk, every consumes 0.3g wax;
(3) chip is attached on ceramic disk to bedding dust-free paper, platen pressurization 2min, pressure 0.6MPa;
(4) be cooled to 40 ℃, take out ceramic disk, the end of waxing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210457559.8A CN103811595A (en) | 2012-11-15 | 2012-11-15 | Waxing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210457559.8A CN103811595A (en) | 2012-11-15 | 2012-11-15 | Waxing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103811595A true CN103811595A (en) | 2014-05-21 |
Family
ID=50708081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210457559.8A Pending CN103811595A (en) | 2012-11-15 | 2012-11-15 | Waxing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103811595A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409582A (en) * | 2014-11-19 | 2015-03-11 | 迪源光电股份有限公司 | LED (light-emitting diode) wafer pasting method |
| CN110098286A (en) * | 2018-01-29 | 2019-08-06 | 山东浪潮华光光电子股份有限公司 | A kind of pasting method in the LED wafer substrate thinning of simplicity |
-
2012
- 2012-11-15 CN CN201210457559.8A patent/CN103811595A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409582A (en) * | 2014-11-19 | 2015-03-11 | 迪源光电股份有限公司 | LED (light-emitting diode) wafer pasting method |
| CN110098286A (en) * | 2018-01-29 | 2019-08-06 | 山东浪潮华光光电子股份有限公司 | A kind of pasting method in the LED wafer substrate thinning of simplicity |
| CN110098286B (en) * | 2018-01-29 | 2020-05-08 | 山东浪潮华光光电子股份有限公司 | Surface mounting method in thinning of LED wafer substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140521 |