CN103639877A - Polishing processing method for ultrathin sapphire wafer - Google Patents
Polishing processing method for ultrathin sapphire wafer Download PDFInfo
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- CN103639877A CN103639877A CN201310605278.7A CN201310605278A CN103639877A CN 103639877 A CN103639877 A CN 103639877A CN 201310605278 A CN201310605278 A CN 201310605278A CN 103639877 A CN103639877 A CN 103639877A
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- sapphire sheet
- processing method
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- sapphire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a polishing processing method for an ultrathin sapphire wafer. The polishing processing method comprises the steps of enabling the sapphire wafer cut into pieces to be heated to 120 DEG C through a heating table, coating the product with solid wax, enabling the sapphire wafer to adhere to a ceramic plate, and enabling the ceramic plate where the sapphire wafer adheres well to be placed on a single-side polishing machine to be polished. A single-side polishing process is adopted, the ceramic plate with a large thickness and high strength is utilized to serve as a carrier, the sapphire wafer has no deformation under a high rotating speed and high pressure, the problem that the sapphire wafer cracks is solved well, the sapphire wafer can bear larger pressure and a larger rotating speed, and production efficiency is also improved correspondingly. A single polishing device is utilized to process the product, pressure can be added to 0.5kg per square centimeter, and the rotating speed can reach 60rpm. The polishing processing method is of great significance for a large panel with the processing thickness of below 0.5mm, the length of above 120mm and the width of above 55mm.
Description
Technical field
The present invention relates to a kind of processing method of sapphire sheet, be specially the special polishing processing method for ultra-thin sapphire sheet.
Background technology
Sapphire is that a kind of high rigidity that has is damage resistant, high temperature resistant, the material of corrosion-resistant and high permeability; because making sapphire, above-mentioned characteristic starts slowly instead of glass in a lot of fields, as wrist-watch table cover, camera protection cover; some high-temperature service observation window and navigators, the touch-screen of mobile phone etc.
Existing sapphire product thickness is all thicker, and relative intensity is also larger, during polishing, with traditional twin polisher, product is put into than self thin Parade wheel (fixture) and is processed.But along with development in science and technology, more and more harsher to the weight of product and thickness requirement, sapphire thickness also subtracts thinner and thinner, and such as the current direction of mobile phone development is giant-screen, ultra-thin and low weight, sapphire density is larger, its size is larger, relative weight is also just heavier, in order to realize the large frivolous requirement of mobile phone, can only reduce sapphire thickness, substantially jewel THICKNESS CONTROL is proper below 0.7mm, as the thickness of 0.5mm, 0.4mm and 0.3 mm.
And there are a large amount of problems man-hour adding in traditional glossing:
1, for thickness, be only the sapphire product that 1mm is even thinner, be under high pressure easy to by pressure break, cause occurring a large amount of damaged products;
2, due to the attenuation of sapphire thickness, polishing also will change with the thickness of Parade wheel thereupon so, because adopting metal material, makes existing Parade wheel, when its thickness reduces, especially be reduced to the following rear intensity wretched insufficiency of 0.5mm, under the high-revolving state of polishing high pressure, be easy to damage, cause product breakage rate high, even occur that entire block scraps.Especially for thickness below 0.5mm, and length is greater than 120mm, width is greater than the large panel of 55mm, adopt traditional two-sided processing more difficult, the larger thickness of area is lower, make the suffered pressure of its full wafer when polishing more much larger than small panel, and polishing cloth self is softer easy compression, so its compressive strain amount of larger sapphire sheet is also just larger, also easier to be broken.
3, market lacks a kind of solid wax for sapphire single-sided polishing, and commercially available solid wax is not good for sapphire wafer polishing effect.
Summary of the invention
Technical problem to be solved by this invention is, a kind of single-sided polishing processing method of sapphire sheet is provided, and this processing method is particularly useful for the polishing of the sapphire sheet of thickness below 1mm.
For solving the problems of the technologies described above, the present invention has abandoned the technique that traditional double mirror polish depends on Parade wheel bearing product, changes into pasting paying the single-sided polishing technique that increases product strength in ceramic disk.
The polishing processing method of the ultra-thin sapphire sheet of the present invention, that the sapphire sheet of dicing is heated to 120 ℃ by warm table, then solid state wax is applied on product and is evenly fitted on ceramic disk, then the ceramic disk that posts sapphire sheet is put into and on single side polishing machine, carried out polishing.
Further, the thickness of the sapphire sheet of dicing is 0.1-1mm.
The thickness of the sapphire sheet of described dicing further can be contracted to 0.1-0.5mm.
The thickness of the sapphire sheet of described dicing also can further can be contracted to 0.1-0.3mm again.
Further, the thickness >=30mm of described ceramic disk, flatness≤5 μ m.
Further, described sapphire sheet is affixed on ceramic disk by cooling processing to room temperature, then puts into single side polishing machine and carry out polishing.
Further, after described sapphire sheet is affixed on ceramic disk, adopts weight to be pressed in whole sapphire sheet, then carry out cooling processing.
Further, the time of described polishing is 2 hours.
Further, the component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 35-40 of 20 μ m, and particle diameter is the microcrystal fused alumina 1-5 of 30 μ m, stearic acid 20-30, microwax 8-18, lanolin 2-5, acetamide 0.5-2.
Further, the component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 38 of 20 μ m, and particle diameter is the microcrystal fused alumina 4 of 30 μ m, stearic acid 20, microwax 18, lanolin 5, acetamide 2.
The present invention adopts single-sided polishing technique, the ceramic disk that utilization has larger thickness and intensity is carrier, make sapphire sheet under high rotating speed and high pressure without any distortion, so avoided well the cracked problem of sapphire sheet, and sapphire sheet can be born larger pressure and rotating speed, the also corresponding production efficiency that improved.With singly casting every square centimeter of product of standby processing, can be pressurized to 0.5kg, rotating speed can reach 60rpm, and every square centimeter of tradition processing is only 0.2kg, and maximum speed is 35rpm.Polishing processing method of the present invention is for processing thickness below 0.5mm, and length is greater than 120mm, and the large panel that width is greater than 55mm has great importance.
The specific embodiment
Embodiment 1:
0.5mm is thick, and length is 145mm, width is that the sapphire sheet of 66mm is heated to 120 ℃ by general warm table, the solid state wax that by fusing point is again 80 ℃ spreads upon on product uniformly, with the weight of 10kg, be pressed in whole sapphire sheet again, allow it fit in equably on ceramic disk, again ceramic disk is moved on general cooler pan (chilling temperature is below 15 ℃) cooling, while reaching room temperature Deng the temperature of ceramic disk, take off ceramic disk, pack single-sided polishing equipment into, equipment pressure is decided to be to every square centimeter of 0.5kg of product, rotating speed 60rpm(is that rotating speed is 60 rpms), be set as 2h process time, opening device polishing product, after the time of advent, lower machine is got sheet, with same second face of flow process processing, complete the polishing of whole product.
The component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 35 of 20 μ m, and particle diameter is the microcrystal fused alumina 1 of 30 μ m, stearic acid 20, microwax 8, lanolin 2, acetamide 0.5.
Embodiment 2:
As different from Example 1, sapphire sheet thickness is 0.4mm, and length is 130mm, and width is 60mm.
The component weight portion of described solid state wax is: particle diameter is that the sapphire of 20 μ m is micro-40, and particle diameter is the microcrystal fused alumina 5 of 30 μ m, stearic acid 30, microwax 18, lanolin 5, acetamide 2.
Embodiment 3:
As different from Example 1, sapphire sheet thickness is 0.1mm, and length is 125mm, and width is 57mm.
The component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 38 of 20 μ m, and particle diameter is the microcrystal fused alumina 4 of 30 μ m, stearic acid 20, microwax 18, lanolin 5, acetamide 2.
Embodiment 4:
As different from Example 1, sapphire sheet thickness is 0.7mm, and length is 150mm, and width is 69mm.
The component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 38 of 20 μ m, and particle diameter is the aluminium oxide powder 10 of 30 μ m, stearic acid 20, microwax 18, lanolin 5, acetamide 2.
Embodiment 5:
As different from Example 1, sapphire sheet thickness is 1mm, and length is 180mm, 82mm.
The component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 38 of 20 μ m, and particle diameter is the silica 4 of 40 μ m, and particle diameter is the zirconia 6 of 40 μ m, stearic acid 20, microwax 18, lanolin 5, acetamide 2.
Resulting sapphire sheet in each embodiment, can be applicable to according to size the various products such as mobile phone, panel computer.
The above-mentioned specific embodiment is exemplary, is to be limiting the scope of the invention in order better to make those skilled in the art can understand the present invention, can not to be interpreted as; As long as make any being equal to of having done according to disclosed spirit change or modify, all fall into the scope of protection of the invention.
Claims (10)
1. the polishing processing method of a ultra-thin sapphire sheet, it is characterized in that: the method is that the sapphire sheet of dicing is heated to 120 ℃ by warm table, then solid state wax is applied on product and is evenly fitted on ceramic disk, then the ceramic disk that posts sapphire sheet is put into and on single side polishing machine, carried out polishing.
2. the polishing processing method of ultra-thin sapphire sheet according to claim 1, is characterized in that: the thickness of the sapphire sheet of dicing is 0.1-1mm.
3. the polishing processing method of ultra-thin sapphire sheet according to claim 2, is characterized in that: the thickness of the sapphire sheet of dicing is 0.1-0.5mm.
4. the polishing processing method of ultra-thin sapphire sheet according to claim 3, is characterized in that: the thickness of the sapphire sheet of dicing is 0.1-0.3mm.
5. the polishing processing method of ultra-thin sapphire sheet according to claim 1, is characterized in that: the thickness >=30mm of described ceramic disk, flatness≤5 μ m.
6. the polishing processing method of ultra-thin sapphire sheet according to claim 1, is characterized in that: described sapphire sheet is affixed on ceramic disk by cooling processing to room temperature, then puts into single side polishing machine and carry out polishing.
7. the polishing processing method of ultra-thin sapphire sheet according to claim 6, is characterized in that: after described sapphire sheet is affixed on ceramic disk, adopts weight to be pressed in whole sapphire sheet, then carry out cooling processing.
8. the polishing processing method of ultra-thin sapphire sheet according to claim 1, is characterized in that: the time of described polishing is 2 hours.
9. the polishing processing method of ultra-thin sapphire sheet according to claim 1, it is characterized in that: the component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 35-40 of 20 μ m, particle diameter is the microcrystal fused alumina 1-5 of 30 μ m, stearic acid 20-30, microwax 8-18, lanolin 2-5, acetamide 0.5-2.
10. the polishing processing method of ultra-thin sapphire sheet according to claim 1, is characterized in that: the component weight portion of described solid state wax is: particle diameter is the sapphire micro mist 38 of 20 μ m, and particle diameter is the microcrystal fused alumina 4 of 30 μ m, stearic acid 20, microwax 18, lanolin 5, acetamide 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310605278.7A CN103639877A (en) | 2013-11-26 | 2013-11-26 | Polishing processing method for ultrathin sapphire wafer |
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| CN201310605278.7A CN103639877A (en) | 2013-11-26 | 2013-11-26 | Polishing processing method for ultrathin sapphire wafer |
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| CN103639877A true CN103639877A (en) | 2014-03-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104087405A (en) * | 2014-07-02 | 2014-10-08 | 上海致领半导体科技发展有限公司 | Cooling liquid for double-side thinning processing of touch screen panel of mobile phone and preparation method of cooling liquid |
| CN105127881A (en) * | 2015-07-30 | 2015-12-09 | 洛阳金诺机械工程有限公司 | Bearing disc for wafer double-face grinding and polishing machine, grinding and polishing machine of wafers and grinding and polishing method for wafers |
| CN105619183A (en) * | 2014-12-19 | 2016-06-01 | 南京京晶光电科技有限公司 | System and method for preparing ultrathin sheets from sapphire through grinding machining |
| CN111185858A (en) * | 2020-02-28 | 2020-05-22 | 北京道天技术研发有限公司 | Method for processing high-precision superhard abrasive material integral cutting grinding wheel |
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| JP2011162402A (en) * | 2010-02-10 | 2011-08-25 | Disco Abrasive Syst Ltd | Method for processing sapphire substrate |
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| CN202702003U (en) * | 2012-07-06 | 2013-01-30 | 浙江上城科技有限公司 | Sapphire wafer chip mounter |
| CN103252708A (en) * | 2013-05-29 | 2013-08-21 | 南京航空航天大学 | Sapphire substrate ultraprecision machining method based on fixed abrasive pad |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104087405A (en) * | 2014-07-02 | 2014-10-08 | 上海致领半导体科技发展有限公司 | Cooling liquid for double-side thinning processing of touch screen panel of mobile phone and preparation method of cooling liquid |
| CN105619183A (en) * | 2014-12-19 | 2016-06-01 | 南京京晶光电科技有限公司 | System and method for preparing ultrathin sheets from sapphire through grinding machining |
| CN105127881A (en) * | 2015-07-30 | 2015-12-09 | 洛阳金诺机械工程有限公司 | Bearing disc for wafer double-face grinding and polishing machine, grinding and polishing machine of wafers and grinding and polishing method for wafers |
| CN111185858A (en) * | 2020-02-28 | 2020-05-22 | 北京道天技术研发有限公司 | Method for processing high-precision superhard abrasive material integral cutting grinding wheel |
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Application publication date: 20140319 |