CN204230205U - The device of wafer is protected in a kind of wafer reduction process - Google Patents
The device of wafer is protected in a kind of wafer reduction process Download PDFInfo
- Publication number
- CN204230205U CN204230205U CN201420801619.8U CN201420801619U CN204230205U CN 204230205 U CN204230205 U CN 204230205U CN 201420801619 U CN201420801619 U CN 201420801619U CN 204230205 U CN204230205 U CN 204230205U
- Authority
- CN
- China
- Prior art keywords
- wafer
- high temperature
- ceramic disk
- temperature resistant
- mylar sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model discloses the device protecting wafer in a kind of wafer reduction process, belong to semiconductor silicon device and IC manufacturing field.This device comprises ceramic disk, high temperature resistant mylar sheet and low-temperature wax layer, high temperature resistant mylar sheet sticks on ceramic disk, low-temperature wax uniform application is on high temperature resistant mylar sheet surface, and wherein high temperature resistant mylar sheet comprises the transparent release film of PET, acrylic pressure-sensitive adhesive and PET hyaline membrane; In wafer reduction process.Carry out wafer thinning time, high temperature resistant mylar sheet plays the hard to hard contact of buffering substrate and ceramic disk on the one hand, protects smoothness and the evenness on ceramic disk surface on the other hand.The utility model can reduce wafer thinning time fragment rate, the chip production rate of raising, can also reduce the abrasion of ceramic disk in addition, extends useful life of ceramic disk, and reduce production cost, high financial profit, is applicable to commercial application.
Description
Technical field
The invention belongs to semiconductor silicon device and IC manufacturing field, more particularly, relate to the device protecting wafer in a kind of wafer reduction process.
Background technology
Semiconductor refers to the material of electric conductivity between conductor and insulator under normal temperature, and it has a wide range of applications on broadcast receiver, television set and thermometric, and diode is a kind of semi-conducting material.The process for making of semiconductor silicon device and integrated circuit lead must have the wafer reduction process of goods chip, thinning object to be to make wafer in use can better dispel the heat, increasing the service life.The thinning of the thickness of detector such as semiconductor chip is all whole Wafer Thinnings, normally adopts and is deducted by unnecessary thickness, to reach reduction packaging height by methods such as filing, polishing, chemico-mechanical polishing, dry type polishings at disk back; Also help after being thinned to certain thickness and improve chip fracture resistance.The thinning principle of wafer to treat that thinning wafer is under the active force of physics or chemistry, by emery wheel or the mill of High Rotation Speed, grind away certain thickness wafer at wafer rear, wafer can be met the needs of production on the one hand, good radiating effect can be reached again on the other hand.Along with the development of wafer size, the thinning requirement of wafer is more and more stricter, because wafer is in High Rotation Speed (1000--2400 rev/min) process of main shaft and driven shaft in thinning process, effect by external force very easily produces the situation of wafer breakage, wafer breakage adds the workload of operating personnel on the one hand, reduce capacity utilization, also reduce product yield on the other hand.
Through retrieval, China Patent Publication No. CN 101308778 A, the applying date is the thining method that the patent application document on November 19th, 2008 discloses a kind of semiconductor chip, semiconductor device has the ranks that face down of figure to compose and lay out by the method, thinning front is needed to stick on diaphragm, form a square or rectangular, at the peripheral placing area of square or rectangular, thickness and semiconductor device area, the tablet that thickness is suitable, surround a square or rectangular again, intermediate semiconductor device uniform force when making thinning, thickness thinning is set again, filing is adopted to start thinning, after thinning end, thinned die reprocessing, finally surrender and meet technological requirement chip, the thining method complex operation of the semiconductor chip provided in this invention, every thinning a slice chip will carry out a pad pasting and take off membrane operations, efficiency is low, only be the improvement reduction process, fundamentally do not solve chip problem impaired in thinning process.China Patent Publication No. CN 101982870 A, the applying date is the guard method that the patent application document on September 21st, 2010 discloses a kind of chip in chip thinning process, adopt 3193 types or the hot stripping film of 319Y type and vacuum cup, material and the instruments such as striping heater, 3193 types or 319Y type hot stripping film convering front side of silicon wafer are carried out chip thinning technique, after chip thinning is qualified, carry out heating and take off film, this inventive method reasonable simplicity, chip in chip thinning process front protecting is effective, but this invention needs chip to be heated to 135 ~ 145 DEG C when the hot stripping film of 3193 types or 319Y type of removing chip surface, when taking off membrane operations, temperature is higher, not easily reach in production process, and waste energy and also easily scald staff, in addition, under hot conditions, chip is easily damaged, reduce the performance of chip.Therefore need to study a kind of wafer with protection device economic and practical, easy and simple to handle.
Summary of the invention
1. the problem that will solve
The problem such as performance, protected effect difference of chip can be affected for the phenomenon and existing chip protection method that frequently occur wafer breakage in existing chip thinning technique; the utility model provides the device protecting wafer in a kind of wafer reduction process; high temperature resistant mylar sheet in this device has excellent physical and mechanical properties in wider temperature range; good to the protected effect of chip in wafer reduction process, pollution-free to wafer after stripping, without cull.Low-temperature wax layer good stability when solidifying state in this device, firmly can be fixed on high temperature resistant mylar sheet and not easily loosen by chip.It is simple that the utility model has structure, and reasonable in design, simple to operate, make wafer almost zero loss in reduction process, high financial profit, has good market application foreground.
2. technical scheme
In order to solve the problem, the technical solution adopted in the present invention is as follows:
Protect a device for wafer in wafer reduction process, comprise ceramic disk, high temperature resistant mylar sheet and low-temperature wax layer, described high temperature resistant mylar sheet and low-temperature wax layer are successively set on the surface of ceramic disk.
Preferably, described high temperature resistant mylar sheet comprises the transparent release film of PET, acrylic pressure-sensitive adhesive and PET hyaline membrane, and described acrylic pressure-sensitive adhesive is between the transparent release film of PET and PET hyaline membrane.
Preferably, the thickness of the transparent release film of described PET is the thickness of 22-27 μm, PET hyaline membrane is 75-85 μm.
Preferably, the adhesion strength of described high temperature resistant mylar sheet is 22-28g/30mm, and full light transmission rate is 83-91%.
Preferably, the making material of described low-temperature wax layer is the wax of fusion temperature between 50-55 DEG C.
Preferably, the thickness of described low-temperature wax layer is 4-6 μm.
Preferably, described ceramic disk is circular.
3. beneficial effect
Compared to prior art, the beneficial effects of the utility model are:
(1) wafer with protection device energy available protecting wafer of the present utility model is not impaired in reduction process, compared with prior art, the fragment rate of reduction process chips reduces 60-80%, and this device can be reused, greatly reduce the production cost of chip, high temperature resistant mylar sheet surface smoothing in wafer with protection device is glossy, in wider temperature range, there is excellent physical and mechanical properties, can withstand long term exposure 120 DEG C of high temperature, electrical insulating property is excellent, even under high-temperature high-frequency, its electrical property is still better, also there is excellent creep resistance simultaneously, fatigue durability, rub resistance, dimensional stability etc., pollution-free after peeling off, without cull,
(2) it is very firm, stable that the high temperature resistant mylar sheet in the utility model and ceramic disk adhere to, PET hyaline membrane in high temperature resistant mylar sheet has good resiliency to wafer, inventor finds through pilot production many times, it is best to the protected effect of wafer when the thickness that PET transparent release film thickness is 22-27 μm, PET hyaline membrane is 75-85 μm;
(3) high temperature resistant mylar sheet of the present utility model is produced and is obtained in 10000 grades of clean environment workshops, surface smoothing is glossy, in reduction process, make wafer directly not contact with ceramic disk, the cushioning effect of high temperature resistant mylar sheet is utilized to filter out the fine particle shape material of crystal column surface existence and the contact of ceramic disk, avoiding wafer is coughed up broken under pressure by particle, decrease the wafer breakage produced because wafer material comparatively firmly directly contacts with ceramic disk;
(4) in the thinning protective device of wafer of the present utility model, the high temperature resistant mylar sheet of ceramic disk surface adhesion has good physical and mechanical properties, while protection wafer, also protect the surface of ceramic disk, avoid the wearing and tearing on ceramic disk surface, extend the useful life of ceramic disk;
(5) wafer with protection device of the present utility model, one deck low-temperature wax has been smeared at high temperature resistant mylar sheet surface uniform, the fusion temperature of this low-temperature wax is 50-55 DEG C, this low-temperature wax layer good stability when solidifying state, chip firmly can be fixed on high temperature resistant mylar sheet not easily to loosen, after thinning completing, namely only wafer with protection device need be heated to 80 DEG C can make wax melt, then chip is taken off from wafer with protection device, with need in prior art to be heated to compared with in the of 135 ~ 145 DEG C, the utility model operating condition milder, energy-conserving and environment-protective, effect is high, cost is low.
Accompanying drawing explanation
Fig. 1 is the structural representation of wafer with protection device in the utility model;
Fig. 2 is the structural representation of high temperature resistant mylar sheet in the utility model;
Fig. 3 is the vertical view of the wafer with protection device after fixing wafer in the utility model.
In figure: 1, ceramic disk; 2, high temperature resistant mylar sheet; 3, low-temperature wax; 4, wait to grind wafer; 21, the transparent release film of PET; 22, acrylic pressure-sensitive adhesive; 23, PET hyaline membrane.
Embodiment
Below in conjunction with specific embodiment, the present invention is described further.
Embodiment 1
As shown in Figure 1, Figure 2 and Figure 3, protect the device of wafer in a kind of wafer reduction process, comprise ceramic disk 1, high temperature resistant mylar sheet 2 and low-temperature wax layer 3, ceramic disk 1 is circular; High temperature resistant mylar sheet 2 and low-temperature wax layer 3 are successively set on the surface of ceramic disk 1; High temperature resistant mylar sheet 2 comprises the transparent release film 21 of PET, acrylic pressure-sensitive adhesive 22 and PET hyaline membrane 23, and acrylic pressure-sensitive adhesive 22 is between the transparent release film 21 of PET and PET hyaline membrane 23; The thickness of the transparent release film 21 of PET is 25 μm, and the thickness of PET hyaline membrane 23 is 80 μm; The thickness of low-temperature wax layer 3 is 5 μm, and it makes material is fusion temperature at the wax of 50 DEG C.
Prepare in above-mentioned a kind of wafer reduction process when protecting the device of wafer, ceramic disk is placed on heating station and is heated to 70 DEG C, then dip in isopropyl alcohol with non-dust cloth and clean ceramic disk, throw off the transparent release film of PET in high temperature resistant mylar sheet without glue-line, to be attached on ceramic disk containing glue-line, guarantee bubble-free between high temperature resistant mylar sheet and ceramic disk, edge does not tilt, to prune along ceramic disk edge unnecessary high temperature resistant mylar sheet marginal portion with blade, the ceramic disk having pasted high temperature resistant mylar sheet is cooled to room temperature; And then be heated to 70 DEG C, be coated with one deck low-temperature wax at the surface uniform of high temperature resistant mylar sheet, after the several seconds, wafer be placed on ceramic disk uniformly according to a definite sequence, as shown in Figure 3, then moved to by the ceramic disk of upper complete wafer on pressurization cooling bench, carry out pressurization cooling, pressure is 5kg/cm
2, pressing time is 15min, and the type of cooling is recirculated water cooling, and discharge is 3L/min.
High temperature resistant mylar sheet in the present embodiment after tested, its performance is as shown in table 1: adhesion strength is 25g/30mm, with ceramic disk adhere to very firmly, stable, long service life, its full light transmission rate is 90%, and convenient observation between high temperature resistant mylar sheet and ceramic disk has bubble-free.
The performance parameter of table 1 is high temperature resistant mylar sheet
Use the wafer with protection device of the present embodiment compared with prior art; wafer possibility of wafer breakage in reduction process reduces 3%; the possibility of surface scratches of wafer reduces 7%; after reduction process completes; the ceramic disk being loaded with thinned wafer is placed on heating station and is heated to 80 DEG C; when crystal round fringes tilts slightly, picking up wafer with tweezers, to put into the basket of acid and alkali-resistance to be washed.The crystal column surface that the method is peeled off not easily is scratched, and does not need in addition at high temperature to peel off wafer, reduces the deformation of wafer.
Embodiment 2
Protect a device for wafer in wafer reduction process, structure is with embodiment 1, and difference is: the thickness of the transparent release film 21 of PET is 22 μm, and the thickness of PET hyaline membrane 23 is 85 μm; The thickness of low-temperature wax layer 3 is 6 μm, and it makes material is fusion temperature at the wax of 55 DEG C.
Preparing in above-mentioned a kind of wafer reduction process protects the method for the device of wafer with embodiment 1, and difference is placed on by ceramic disk on heating station to be heated to 60 DEG C.
High temperature resistant mylar sheet in the present embodiment after tested, its performance is as shown in table 2: adhesion strength is 28g/30mm, with ceramic disk adhere to very firmly, stable, long service life, its full light transmission rate is 83%, and convenient observation between high temperature resistant mylar sheet and ceramic disk has bubble-free.
The performance parameter of table 2 is high temperature resistant mylar sheet
Use the wafer with protection device of the present embodiment compared with prior art; wafer possibility of wafer breakage in reduction process reduces 4%; the possibility of surface scratches of wafer reduces 9%; after reduction process completes; the ceramic disk being loaded with thinned wafer is placed on heating station and is heated to 70 DEG C; when crystal round fringes tilts slightly, picking up wafer with tweezers, to put into the basket of acid and alkali-resistance to be washed.The crystal column surface that the method is peeled off not easily is scratched, and does not need in addition at high temperature to peel off wafer, reduces the deformation of wafer.
Embodiment 3
Protect a device for wafer in wafer reduction process, structure is with embodiment 1, and difference is: the thickness of the transparent release film 21 of PET is 27 μm, and the thickness of PET hyaline membrane 23 is 75 μm; The thickness of low-temperature wax layer 3 is 4 μm, and it makes material is fusion temperature at the wax of 50 DEG C.
Preparing in above-mentioned a kind of wafer reduction process protects the method for the device of wafer with embodiment 1, and difference is placed on by ceramic disk on heating station to be heated to 90 DEG C.
High temperature resistant mylar sheet in the present embodiment after tested, its performance is as shown in table 3: adhesion strength is 22g/30mm, with ceramic disk adhere to very firmly, stable, long service life, its full light transmission rate is 91%, and convenient observation between high temperature resistant mylar sheet and ceramic disk has bubble-free.
The performance parameter of table 3 is high temperature resistant mylar sheet
Use the wafer with protection device of the present embodiment compared with prior art; wafer possibility of wafer breakage in reduction process reduces 3.5%; the possibility of surface scratches of wafer reduces 8%; after reduction process completes; the ceramic disk being loaded with thinned wafer is placed on heating station and is heated to 80 DEG C; when crystal round fringes tilts slightly, picking up wafer with tweezers, to put into the basket of acid and alkali-resistance to be washed.The crystal column surface that the method is peeled off not easily is scratched, and does not need in addition at high temperature to peel off wafer, reduces the deformation of wafer.
Schematically above be described the present invention and execution mode thereof, this description does not have restricted, and also just one of the embodiments of the present invention shown in accompanying drawing, actual structure is including, but not limited to this.So, if those of ordinary skill in the art enlightens by it, when not departing from the utility model and creating aim, design the frame mode similar to this technical scheme and embodiment without creationary, protection range of the present utility model all should be belonged to.
Claims (7)
1. in a wafer reduction process, protect the device of wafer; it is characterized in that: comprise ceramic disk (1), high temperature resistant mylar sheet (2) and low-temperature wax layer (3), described high temperature resistant mylar sheet (2) and low-temperature wax layer (3) are successively set on the surface of ceramic disk (1).
2. in a kind of wafer reduction process according to claim 1, protect the device of wafer; it is characterized in that: described high temperature resistant mylar sheet (2) comprises the transparent release film of PET (21), acrylic pressure-sensitive adhesive (22) and PET hyaline membrane (23), and described acrylic pressure-sensitive adhesive (22) is positioned between the transparent release film of PET (21) and PET hyaline membrane (23).
3. protect the device of wafer in a kind of wafer reduction process according to claim 2, it is characterized in that: the thickness of the transparent release film of described PET (21) is the thickness of 22-27 μm, PET hyaline membrane (23) is 75-85 μm.
4. protect the device of wafer in a kind of wafer reduction process according to claim 3, it is characterized in that: the adhesion strength of described high temperature resistant mylar sheet is 22-28g/30mm, and full light transmission rate is 83-91%.
5. protect the device of wafer in a kind of wafer reduction process according to claim 1, it is characterized in that: the making material of described low-temperature wax layer (3) is the wax of fusion temperature between 50-55 DEG C.
6. protect the device of wafer in a kind of wafer reduction process according to claim 5, it is characterized in that: the thickness of described low-temperature wax layer (3) is 4-6 μm.
7. protect the device of wafer in a kind of wafer reduction process according to claim 1, it is characterized in that: described ceramic disk (1) is for circular.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420801619.8U CN204230205U (en) | 2014-12-16 | 2014-12-16 | The device of wafer is protected in a kind of wafer reduction process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420801619.8U CN204230205U (en) | 2014-12-16 | 2014-12-16 | The device of wafer is protected in a kind of wafer reduction process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204230205U true CN204230205U (en) | 2015-03-25 |
Family
ID=52928269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420801619.8U Active CN204230205U (en) | 2014-12-16 | 2014-12-16 | The device of wafer is protected in a kind of wafer reduction process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204230205U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172498A (en) * | 2017-11-23 | 2018-06-15 | 南昌易美光电科技有限公司 | cleaning method based on chip thinning |
-
2014
- 2014-12-16 CN CN201420801619.8U patent/CN204230205U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172498A (en) * | 2017-11-23 | 2018-06-15 | 南昌易美光电科技有限公司 | cleaning method based on chip thinning |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100437926C (en) | Method and device for separating a reinforcing-plate fixed to a reinforced semiconductor wafer | |
| CN105081893B (en) | A kind of ultra-thin Ge monocrystalline substrate materials and preparation method thereof | |
| WO2015000225A1 (en) | Flexible display manufacturing method and flexible display | |
| CN102134458A (en) | PET (polyethylene terephthalate) protective film for preparing flat-panel display | |
| CN102607916A (en) | Preparation method of silicon chip metallographic specimen | |
| CN103035580A (en) | Temporary bonding and dissociating process method applied to thin silicon slices | |
| CN101673668A (en) | Method for polishing gallium nitride crystals | |
| CN204230205U (en) | The device of wafer is protected in a kind of wafer reduction process | |
| CN202936363U (en) | Self-stripping protective pasting film | |
| CN101308778A (en) | Thinning method of semiconductor chip | |
| CN103870813A (en) | Fingerprint sensor and electronic equipment | |
| CN106252472B (en) | A kind of auxiliary removes the frock clamp and its working method of wax for GaAs base LED chip before thinned | |
| CN201519904U (en) | Chip stripping device | |
| CN108231648A (en) | Patch tooling and pasting method in a kind of GaAs base LED chips reduction process | |
| CN107298428B (en) | A method of it is separated for SOG-MEMS chip unit | |
| CN104403593B (en) | A kind of method protecting wafer in high temperature resistant mylar sheet and preparation method thereof and wafer reduction process | |
| CN101982870B (en) | Method for protecting chip in chip thinning process | |
| CN205668654U (en) | A kind of mobile phone glass touch screen processing protecting film and touch screen | |
| CN102163542A (en) | Single-chip method for thin-film electronic component and electronic component mounting adhesive thin sheet manufactured via the same | |
| CN201981147U (en) | Protective adhesive tape for wafer cutting | |
| CN201990629U (en) | PET (Polyethylene Terephthalate) protective film used in manufacturing process of flat-panel display | |
| CN110729186A (en) | Processing method for wafer cutting and separating | |
| CN209335381U (en) | A kind of bonding device for realizing accurate bonding between silicon wafer | |
| CN212553312U (en) | Sapphire wafer processing is with taking off piece device fast | |
| CN103077889B (en) | A kind of thinning method for backing side of wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |