CN209335381U - A kind of bonding device for realizing accurate bonding between silicon wafer - Google Patents
A kind of bonding device for realizing accurate bonding between silicon wafer Download PDFInfo
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- CN209335381U CN209335381U CN201822111481.XU CN201822111481U CN209335381U CN 209335381 U CN209335381 U CN 209335381U CN 201822111481 U CN201822111481 U CN 201822111481U CN 209335381 U CN209335381 U CN 209335381U
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- silicon wafer
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Abstract
A kind of bonding device for realizing accurate bonding between silicon wafer, including matching used binding platform and tabletting platform, the binding platform includes prefabricating plate, heating plate, tetrafluoro plate is equipped with below the prefabricating plate, the heating plate is equipped with ceramic wafer, the multiple silicon wafer placing grooves being set side by side are offered on the ceramic wafer, the side of each silicon wafer placing groove, which offers, takes piece mouth；The tabletting platform includes top board, contains piece platform, which has the first heat-insulated cushion, and the second heat-insulated cushion is equipped in the groove of the Sheng piece platform.By above-mentioned technical proposal, accurate bonding between silicon wafer and silicon wafer is may be implemented in the utility model, that is, ensure that silicon wafer machining accuracy, the consistency on surface, and batch machining may be implemented.
Description
Technical field
The utility model belongs to silicon (crystalline substance) piece processing technology device field, in particular to a kind of silicon wafer single side grinding or thinned
The device of accurate bonding between realization silicon wafer used in process.
Background technique
Silicon transistor since the advent of the world constantly releases novel Si power device and semiconductors manufacture novel technique, however its
Foundation structure is diffuseed to form by the doping of III group under high temperature (boron, aluminium, gallium), V race (phosphorus) elemental semiconductor impurity, in order to
Form N-/N+、P-/P+、N-/P+、P-/N+Moldeed depth junction structure is needed wherein one side N+Or P+Layer grinding removal, for rectifier
Part then needs to remove wherein one side N or P layers, traditional single side removing method: silicon wafer is fixed silicon wafer using sucker or wax, separately
Outer one side is thinned using the machine of being thinned.Due to grinding wheel size and equipment itself limitation can only monolithic or uniline be thinned, processing efficiency
Lowly, the abrasion of grinding wheel also results in the thinned rear silicon wafer depth of parallelism and deteriorates, and processing consistency is poor, because its motion track is fixed, subtracts
Silicon chip surface can influence appearance of device effect there are thinned texture after thin.
Utility model content
For overcome the deficiencies in the prior art, the utility model, which provides one kind, may be implemented accurate between silicon wafer and silicon wafer glue
The device of conjunction ensure that silicon wafer machining accuracy, the consistency on surface, and batch machining may be implemented.
It the purpose of this utility model and solves its technical problem and adopts the following technical solutions to realize.It is practical new according to this
A kind of bonding device for realizing accurate bonding between silicon wafer that type proposes, including matching used binding platform and tabletting platform, it is described
Binding platform includes prefabricating plate, heating plate, and tetrafluoro plate is equipped with below the prefabricating plate, which is equipped with ceramic wafer, the ceramic wafer
On offer the multiple silicon wafer placing grooves being set side by side, the side of each silicon wafer placing groove, which offers, takes piece mouth；The tabletting platform
Including top board, piece platform is contained, which has the first heat-insulated cushion, and it is heat-insulated soft that second is equipped in the groove of the Sheng piece platform
Pad.
The purpose of this utility model also uses following technical measures to further realize.
Bonding device above-mentioned, wherein the side of the ceramic wafer is equipped with temperature sensor.
Bonding device above-mentioned, wherein the thickness deviation of the first heat-insulated cushion, the second heat-insulated cushion is 5 ± 0.1 ㎜.
Bonding device above-mentioned, wherein opening up on the ceramic wafer, there are six silicon wafer placing grooves.
By above-mentioned technical proposal, silicon wafer is not needed thinned face and coats bonding agent (wax) by the utility model, passes through this
The device of utility model makes two silicon wafer bondings, heating and squeezes, and is bonded latter two silicon wafer and is integrally formed, two-sided using tradition
The mode of grinding not only ensure that silicon wafer machining accuracy, the consistency on surface, but also can be real to needing abradant surface to carry out attrition process
Existing batch machining.
The above description is merely an outline of the technical solution of the present invention, in order to better understand the technology of the utility model
Means, and being implemented in accordance with the contents of the specification, and to allow the above and other purpose of the utility model, feature and excellent
Point can be more clearly understood, special below to lift preferred embodiment, and cooperate attached drawing, and detailed description are as follows.
Detailed description of the invention
Fig. 1 is the positive structure diagram of binding platform in the utility model.
Fig. 2 is the overlooking structure diagram of ceramic wafer in the utility model.
Fig. 3 is the structural schematic diagram of tabletting platform in the utility model.
Specific embodiment
Further to illustrate that the utility model is the technical means and efficacy reaching predetermined purpose of utility model and being taken,
Below in conjunction with attached drawing and preferred embodiment, to according to the utility model proposes a kind of bonding die for realizing accurate bonding between silicon wafer
Device its specific embodiment, structure, feature and its effect, detailed description is as follows.
It please refers to Fig.1 to Fig.3, a kind of bonding device for realizing accurate bonding between silicon wafer of the utility model, including matches
Cover the binding platform and tabletting platform that use, the binding platform for silicon wafer to be heated, is bonded, then again with tabletting platform to silicon wafer into
Row squeezes and cooling.The binding platform includes prefabricating plate 1, heating plate 2, wherein heating plate using it is existing with temperature control system and
The conventional heating plate of heating element.It is equipped with tetrafluoro plate 3 below the prefabricating plate 1, is existed using prefabricating plate made of high-purity tetrafluoride material
It can avoid generating pollution to silicon wafer when precompressed silicon wafer.Above-mentioned heating plate 2 is equipped with ceramic wafer 4, can avoid generating silicon wafer dirty
It contaminates, offers the multiple silicon wafer placing grooves 5 being set side by side on the ceramic wafer, the side of each silicon wafer placing groove, which offers, takes piece mouth
51, and this takes the groove depth of piece mouth to be greater than silicon wafer placing groove.It is corresponding two-by-two on ceramic wafer in the present embodiment to set such as Fig. 2
There are total six silicon wafer placing grooves, but the utility model does not limit silicon wafer placing groove setting quantity.Further, described
Temperature sensor 41 is installed on ceramic wafer 4, for monitoring real time temperature when heating, and the temperature sensor and existing work
Control machine is electrical connected.
The tabletting platform includes top board 6, contains piece platform 7, which has the first heat-insulated cushion 8, the Sheng piece platform 7
The second heat-insulated cushion 9 is equipped in groove.After the processing by binding platform, upper layer silicon wafer A and lower layer silicon wafer B passes through binder phase
Bonding, it is specific as shown in figure 3, the binder is wax then by the second heat-insulated cushion being integrally put into groove, from forming wax
Layer C.It is isolated between silicon wafer and top board 6 and Sheng piece platform 7 using the preferable cushion of heat-insulating property；It is simultaneously to ensure that wax layer is equal
Not fragment when even, pressurization, contain film trap baseplane degree need to less than 20 μm, the first and second heat-insulated cushion thickness deviation will control 5 ±
0.1㎜.Top board 6 is isolated using the first heat-insulated cushion 8, silicon temperature can be made to decline immediately when being unlikely to contact pressurization, pressed
Preceding 10 seconds wax layer C of silicon wafer solidify in pressure process still in liquid condition, and above-mentioned wax layer C is thin and uniformity, warp
A large amount of measured datas are crossed, wax layer C can control at 5 ± 2 μm.
The use step and working principle of the utility model are as described below:
1) Wafer Cleaning
Silicon wafer to be processed is inserted into the standard gaily decorated basket using pure water room temperature ultrasound 10 minutes, 20~30KHZ of supersonic frequency is gone
Except silicon chip surface attaching particles, then using SC-1 solution removal surface particles and organic matter stain, it is ensured that silicon chip surface without
Grain object.
2) silicon wafer thickness is classified
Every 1 to 3 microns of silicon wafer are divided for one grade of thickness using the non-contact types thickness test equipment such as amesdial or ADE
Shelves；It is noted that the side is not ground in protection when classification.
3) silicon wafer is bonded
The heating plate 2 for opening bonding die platform is heated, and temperature is controlled at 90 to 120 DEG C, and six silicon wafers are put into silicon wafer and are put
It sets in slot 5 (non-abrasive side is upward), heats 1 to 2 minutes, the wax containing microcrystal grain is then evenly coated in silicon chip surface, one
It is secondary to be painted with silicon wafer in all slots, a piece of silicon wafer other in stack pile gear is carefully placed in (non-ground on the silicon wafer after waxing
Down), and it is aligned the edge of two panels silicon wafer, heats 20 seconds, then can be completed on silicon wafer using prefabricating plate concora crush pre-
Press step.
4) stablize wax layer after being bonded
Incorporated by reference to Fig. 3, by taking piece mouth 51 can be easily by silicon wafer after precompressed (i.e. comprising upper layer silicon wafer A, lower layer's silicon wafer
Wax layer C between B and upper and lower layer silicon wafer) carefully take out, and be placed on and contain piece platform, on the second heat-insulated cushion 9 in 7 grooves, then
It pressurizeed, freezed off to the silicon wafer with top board 6.The source pressure of top board be 15KG pouring weight, pressing time 40 seconds or so.
Because containing microcrystal grain supporting role, wax-layer thickness is controllably between 5 ± 2 μm between the silicon wafer after bonding.Finally take out silicon wafer
It can be moved to thinned machine progress Double-side Synchronous to be thinned.
The above descriptions are merely preferred embodiments of the present invention, any person skilled in the art, not
It is detached within the scope of technical solutions of the utility model, according to the technical essence of the utility model any letter made to the above embodiment
Single modification, equivalent variations and modification, are still within the scope of the technical solutions of the present invention.
Claims (4)
1. a kind of bonding device for realizing accurate bonding between silicon wafer, it is characterised in that including matching used binding platform and tabletting
Platform, the binding platform include prefabricating plate, heating plate, and tetrafluoro plate is equipped with below the prefabricating plate, which is equipped with ceramic wafer, should
The multiple silicon wafer placing grooves being set side by side are offered on ceramic wafer, the side of each silicon wafer placing groove, which offers, takes piece mouth；It is described
Tabletting platform includes top board, contains piece platform, which has the first heat-insulated cushion, be equipped in the groove of the Sheng piece platform second every
Hot cushion.
2. a kind of bonding device for realizing accurate bonding between silicon wafer according to claim 1, it is characterised in that: the pottery
Porcelain plate side is equipped with temperature sensor.
3. a kind of bonding device for realizing between silicon wafer accurate bonding according to claim 1, it is characterised in that: described the
The thickness deviation of one heat-insulated cushion and the second heat-insulated cushion is 5 ± 0.1 ㎜.
4. a kind of bonding device for realizing accurate bonding between silicon wafer according to claim 1, it is characterised in that: the pottery
Silicon wafer placing groove there are six being opened up on porcelain plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822111481.XU CN209335381U (en) | 2018-12-14 | 2018-12-14 | A kind of bonding device for realizing accurate bonding between silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822111481.XU CN209335381U (en) | 2018-12-14 | 2018-12-14 | A kind of bonding device for realizing accurate bonding between silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209335381U true CN209335381U (en) | 2019-09-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822111481.XU Expired - Fee Related CN209335381U (en) | 2018-12-14 | 2018-12-14 | A kind of bonding device for realizing accurate bonding between silicon wafer |
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| Country | Link |
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| CN (1) | CN209335381U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117810156A (en) * | 2024-02-23 | 2024-04-02 | 中国电子科技集团公司第四十六研究所 | Wafer bonding method and wafer bonding device |
-
2018
- 2018-12-14 CN CN201822111481.XU patent/CN209335381U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117810156A (en) * | 2024-02-23 | 2024-04-02 | 中国电子科技集团公司第四十六研究所 | Wafer bonding method and wafer bonding device |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190903 Termination date: 20201214 |