CN105415102A - Method for grinding and polishing CdZnTe wafer without wax - Google Patents
Method for grinding and polishing CdZnTe wafer without wax Download PDFInfo
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- CN105415102A CN105415102A CN201510864304.7A CN201510864304A CN105415102A CN 105415102 A CN105415102 A CN 105415102A CN 201510864304 A CN201510864304 A CN 201510864304A CN 105415102 A CN105415102 A CN 105415102A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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Abstract
The invention discloses a method for grinding and polishing a CdZnTe wafer without wax. The method includes the steps that firstly, a grinding and polishing clamp joint plate is designed and manufactured and horizontally placed on an adsorption plane of a grinding and polishing clamp; the wafer is placed in the center of the joint plate to cover all small vacuum flow guide holes in the joint plate; a grinding clamp is connected with a vacuum generator, and the wafer is adsorbed and fixed; and the wafer is ground through a 3-micron aluminum oxide water solution, 30-50 microns of the wafer is removed, and then a Chemlox polishing liquid chemical machine produced by the Logitech enterprise in England is used for polishing for 2-5 min, and the high-flatness CdZnTe wafer is obtained after cleaning. The method has the beneficial effects that a heating wafer sticking and wax melting wafer taking are not needed, the thickness of the wafer is controlled more accurately, and flatness is higher; the method is suitable for wafers of different sizes, shapes and thicknesses, and practicability is high; cleaning is easy after grinding and polishing, and secondary contamination cannot be caused on the wafer; and cracks and scratches can be reduced, and the grinding and polishing quality is improved.
Description
Technical field
The present invention relates to a kind of semi-conducting material polishing processing technology, specifically refer to a kind of method without wax grinding and polishing cadmium zinc telluride crystal wafer.The present invention is applicable to the grinding and polishing equipment that sample clamp is vacuum adsorption, is suitable for wafer size at more than 2cmX2cm, is suitable for wafer thickness between 100um-5000um.
Background technology
Tellurium zinc cadmium (CdZnTe, CZT) material can pass through to regulate zinc compositional range, and the lattice paprmeter of mercury cadmium telluride carries out excellent coupling, and therefore it is the first-selected substrate of HgCdTe infrared focal plane detector.In addition, tellurium zinc cadmium also can be used for preparation X and gamma ray detector, has a wide range of applications in fields such as Aid of Space Remote Sensing Technology, safety check technology, medical diagnosis technology and weaponrys.But, except the crystal defect produced in Material growth process, the mass defects such as the secondary damage that Cdl-x_Znx_Te causes in process or contamination also seriously can reduce the quality of epitaxial material, affect uniformity and the blind element rate of detector, reduce device performance and even cause component failure.Therefore, the Cdl-x_Znx_Te tool obtaining good surface grinding and polishing quality, high-flatness and cleanliness factor is of great significance.
The grinding and polishing method of tradition cadmium zinc telluride crystal wafer adopts the mode of sticky wax grinding and polishing, first on glass carrying disk, bonding wax is melted at a certain temperature, the wax liquid of fusing places wafer, after wax liquid cooled and solidified, wafer is fixed on glass carrying disk, then carries out grinding, the technique such as polishing.After grinding and polishing completes, heating is loaded with the glass carrying disk of wafer again, is taken off by sample after wax is melted, then carries out the cleaning of multiple tracks organic reagent and remove the wax sticked on wafer.There is following shortcoming in conventional method: (1) pastes the in uneven thickness of wax layer, and after processing, the flatness of material is not good.(2) heating bonding die and dewaxing, to get blade technolgy more time-consuming, reduction process efficiency.(3) grinding and polishing chip easily sticks to wafer periphery, thus easily collides or scratch wafer surface, reduces wafer surface quality.(4) even if repeatedly clean through multiple tracks organic reagent, wax still has residual sometimes, is difficult to remove, and can affect the quality of postchannel process on the contamination of material.
Due to the drawback that traditional grinding and polishing process exists, everybody starts to turn one's attention to without wax polishing technology in recent years.On the carrying disk that part research report can utilize the surface tension of water or other liquid chip sucking to be attached to draw-in groove, thus fixed wafer, one side grinding and polishing is carried out to wafer.In addition, also have research with reference to semiconductor silicon processing technology, design and produce grinding and polishing planetary gear, and by upper lower grinding wheel or grinding and polishing dish, two-sided processing is carried out to wafer simultaneously.But above method must be carried out perforate according to wafer standard size or make draw-in groove, thus fixed wafer position, therefore can only be used for that there is standard-sized wafer, be not suitable for wafer process that is irregularly shaped and thickness.In addition, because the spacing of wafer perimeter is fixed, in grinding and polishing process, wafer can with the draw-in groove generation rigid collision of periphery, because tellurium-zincium-cadmium crystal is soft fragile material, there is the characteristic of easily cracked, easy cleavage, especially large-sized wafer process, use this kind of method without wax polishing that fragment rate can be made obviously to raise.
Summary of the invention
Based on the relevant issues existed in current Cdl-x_Znx_Te grinding and polishing technology, the present invention proposes a kind of method without wax grinding and polishing cadmium zinc telluride crystal wafer.First design and produce grinding and polishing fixture transfer panel, transfer panel is lain in a horizontal plane on grinding and polishing fixture adsorbing plane, then central authorities wafer being placed on transfer panel are to cover all vacuum diversion apertures on transfer panel.Then, be connected with vacuum generator by grinding clamp, wafer is adsorbed fixing.Wafer first removes 30-50um through the grinding of the 3um aluminium oxide aqueous solution, re-uses the Chemlox polishing fluid chemically mechanical polishing 2-5min that Logitech company of Britain produces, obtains the cadmium zinc telluride crystal wafer of high-flatness after cleaning.
The object of this invention is to provide a kind of method without wax grinding and polishing cadmium zinc telluride crystal wafer, thus obtain the cadmium zinc telluride crystal wafer of good surface grinding and polishing quality, high-flatness and cleanliness factor.Described method step is specific as follows:
(1) upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, wafer being treated that grinding and polishing faces up flatly is placed on transfer panel again, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, vacuum is by the conversion of transfer panel, and groove and aperture place produce vacuum immediately, and wafer is adsorbed fixing.
(2) 3um alumina lap: the proportions alumina particle suspension lapping liquid of granularity 3um alumina powder and deionized water volume ratio 1:10, stirs stand-by.Adopt plate glass abrasive disk, setting lap speed is 5-30rpm/min, and grinding drop speed is 3-5ml/min, grinding wafers, uses online thickness measure to advise monitoring wafer and removes thickness.When wafer grinding removal thickness reaches 30-50um, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel being loaded with wafer is taken off.
(3) wafer is cleaned: the uncovered beaker preparing a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is more than 2min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
(4) upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, again facing up after wafer grinding is flatly placed on transfer panel, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, wafer is adsorbed fixing.
(5) Chemlox chemically mechanical polishing: adopt polyurethane long wool polishing disk, setting polishing disk rotating speed is 30-70rpm/min, and adopt the Chemlox polishing fluid that Logitech company of Britain produces, dripping speed is 1-3ml/min, carries out chemical machinery essence and throws.When reaching 2-5min upon polishing, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel level being loaded with wafer is taken off.
(6) wafer is cleaned: when the wafer after throwing essence cleans, action must be rapid, with the contact wafers air oxidation preventing surface from speckling with polishing fluid.Prepare the uncovered beaker of a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water rapidly, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface and unnecessary polishing fluid.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is more than 2min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
The present invention has following advantage:
(1) without the need to heating bonding die and sheet is got in dewaxing, it is more accurate that wafer thickness controls, and flatness is high.
(2) be applicable to the wafer of different size, shape, thickness, practicality is high.
(3) easy cleaning after grinding and polishing, can not cause secondary pollution to wafer.
(4) be conducive to reducing crackle and scuffing, improve grinding and polishing quality.
Accompanying drawing explanation
Fig. 1 is the flow chart of using method of the present invention.
Fig. 2 is the design drawing of this patent grinding and polishing fixture transfer panel, (a) top view, (b) perspective view, wherein transfer panel diameter 83mm, thickness is 6mm, cross flute length 63mm, and groove width is 6mm, groove depth is 3mm, and small aperture is 2mm, and spacing is 8mm.
Detailed description of the invention
Below by instantiation, the present invention is further elaborated, but preferred embodiment provided by the invention, only be used for illustrating the present invention, and scope of the present invention is not imposed any restrictions, the modifications and variations that any person skilled in the art person can realize easily include in the scope of the present invention and claims.The grinding and polishing equipment that following instance is selected is the polisher lapper of the PM5 model that Logitech company of Britain produces.
embodiment 1:
1 upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, the rectangular bimorph being of a size of 3cmX4cm being treated that grinding and polishing faces up flatly is placed on transfer panel again, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, vacuum is by the conversion of transfer panel, and groove and aperture place produce vacuum immediately, and wafer is adsorbed fixing.
23um alumina lap: with the proportions alumina particle suspension lapping liquid of 3um alumina powder and deionized water volume ratio 1:10, stir stand-by.Adopt plate glass abrasive disk, setting lap speed is 5rpm/min, and grinding drop speed is 3ml/min, grinding wafers, uses online thickness measure to advise monitoring wafer and removes thickness.When wafer grinding removal thickness reaches 30um, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel being loaded with wafer is taken off.
3 cleaning wafers: the uncovered beaker preparing a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is 2.5min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
4 upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, again facing up after wafer grinding is flatly placed on transfer panel, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, wafer is adsorbed fixing.
5Chemlox chemically mechanical polishing: adopt polyurethane long wool polishing disk, setting polishing disk rotating speed is 30rpm/min, and adopt the Chemlox polishing fluid that Logitech company of Britain produces, dripping speed is 1ml/min, carries out chemical machinery essence and throws.When reaching 2min upon polishing, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel level being loaded with wafer is taken off.
6 cleaning wafers: when the wafer after throwing essence cleans, action must be rapid, with the contact wafers air oxidation preventing surface from speckling with polishing fluid.Prepare the uncovered beaker of a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water rapidly, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface and unnecessary polishing fluid.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is 2.5min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
embodiment 2:
1 upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, the square wafers being of a size of 4cmX4cm being treated that grinding and polishing faces up flatly is placed on transfer panel again, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, vacuum is by the conversion of transfer panel, and groove and aperture place produce vacuum immediately, and wafer is adsorbed fixing.
23um alumina lap: with the proportions alumina particle suspension lapping liquid of 3um alumina powder and deionized water volume ratio 1:10, stir stand-by.Adopt plate glass abrasive disk, setting lap speed is 20rpm/min, and grinding drop speed is 4ml/min, grinding wafers, uses online thickness measure to advise monitoring wafer and removes thickness.When wafer grinding removal thickness reaches 40um, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel being loaded with wafer is taken off.
3 cleaning wafers: the uncovered beaker preparing a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is 3min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
4 upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, again facing up after wafer grinding is flatly placed on transfer panel, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, wafer is adsorbed fixing.
5Chemlox chemically mechanical polishing: adopt polyurethane long wool polishing disk, setting polishing disk rotating speed is 40rpm/min, and adopt the Chemlox polishing fluid that Logitech company of Britain produces, dripping speed is 2ml/min, carries out chemical machinery essence and throws.When reaching 4min upon polishing, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel level being loaded with wafer is taken off.
6 cleaning wafers: when the wafer after throwing essence cleans, action must be rapid, with the contact wafers air oxidation preventing surface from speckling with polishing fluid.Prepare the uncovered beaker of a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water rapidly, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface and unnecessary polishing fluid.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is 3min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
embodiment 3:
1 upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, again more than the irregularly shaped wafer of 2cmX2cm, size being treated that grinding and polishing faces up flatly is placed on transfer panel, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, vacuum is by the conversion of transfer panel, and groove and aperture place produce vacuum immediately, and wafer is adsorbed fixing.
23um alumina lap: with the proportions alumina particle suspension lapping liquid of 3um alumina powder and deionized water volume ratio 1:10, stir stand-by.Adopt plate glass abrasive disk, setting lap speed is 30rpm/min, and grinding drop speed is 5ml/min, grinding wafers, uses online thickness measure to advise monitoring wafer and removes thickness.When wafer grinding removal thickness reaches 50um, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel being loaded with wafer is taken off.
3 cleaning wafers: the uncovered beaker preparing a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is 5min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
4 upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, again facing up after wafer grinding is flatly placed on transfer panel, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer.Be connected with vacuum generator by grinding and polishing fixture, wafer is adsorbed fixing.
5Chemlox chemically mechanical polishing: adopt polyurethane long wool polishing disk, setting polishing disk rotating speed is 70rpm/min, and adopt the Chemlox polishing fluid that Logitech company of Britain produces, dripping speed is 3ml/min, carries out chemical machinery essence and throws.When reaching 5min upon polishing, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel level being loaded with wafer is taken off.
6 cleaning wafers: when the wafer after throwing essence cleans, action must be rapid, with the contact wafers air oxidation preventing surface from speckling with polishing fluid.Prepare the uncovered beaker of a 1500ml, inside pours into deionized water 1000ml.The transfer panel being loaded with wafer is put into deionized water rapidly, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface and unnecessary polishing fluid.And then adopt flow deionized water, rinse wafer and transfer panel, washing time is 5min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
Claims (1)
1., without a method for wax grinding and polishing cadmium zinc telluride crystal wafer, it is characterized in that comprising the steps:
(1) upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, wafer being treated that grinding and polishing faces up flatly is placed on transfer panel again, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer; Be connected with vacuum generator by grinding and polishing fixture, vacuum is by the conversion of transfer panel, and groove and aperture place produce vacuum immediately, and wafer is adsorbed fixing;
(2) 3um alumina lap: the proportions alumina particle suspension lapping liquid of granularity 3um alumina powder and deionized water volume ratio 1:10, stirs stand-by; Adopt plate glass abrasive disk, setting lap speed is 5-30rpm/min, and grinding drop speed is 3-5ml/min, grinding wafers, uses online thickness measure to advise monitoring wafer and removes thickness; When wafer grinding removal thickness reaches 30-50um, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel being loaded with wafer is taken off;
(3) clean wafer: the uncovered beaker preparing a 1500ml, inside pours into deionized water 1000ml; The transfer panel being loaded with wafer is put into deionized water, uses high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface; And then adopt flow deionized water, rinse wafer and transfer panel, washing time is more than 2min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up;
(4) upper slice: first by transfer panel groove surface down aperture face up and be placed on the vacuum suction face of grinding and polishing fixture, again facing up after wafer grinding is flatly placed on transfer panel, move wafer gently to transfer panel center, the aperture on transfer panel is all hidden by wafer; Be connected with vacuum generator by grinding and polishing fixture, wafer is adsorbed fixing;
(5) Chemlox chemically mechanical polishing: adopt polyurethane long wool polishing disk, setting polishing disk rotating speed is 30-70rpm/min, and adopt the Chemlox polishing fluid that Logitech company of Britain produces, dripping speed is 1-3ml/min, carries out chemical machinery essence and throws; When reaching 2-5min upon polishing, suspend grinding and polishing equipment, cut off the connection of grinding and polishing fixture and vacuum generator, gently the transfer panel level being loaded with wafer is taken off;
(6) wafer is cleaned: when the wafer after throwing essence cleans, prepare the uncovered beaker of a 1500ml, inside pours into deionized water 1000ml, the transfer panel being loaded with wafer is put into deionized water rapidly, use high-purity long-staple cotton repeatedly to clean, remove the grinding waste material on surface and unnecessary polishing fluid; And then adopt flow deionized water, rinse wafer and transfer panel, washing time is more than 2min, finally uses high pure nitrogen deionized water residual on wafer and transfer panel to be dried up.
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| CN201510864304.7A CN105415102A (en) | 2015-12-01 | 2015-12-01 | Method for grinding and polishing CdZnTe wafer without wax |
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| CN201510864304.7A CN105415102A (en) | 2015-12-01 | 2015-12-01 | Method for grinding and polishing CdZnTe wafer without wax |
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| CN110116340A (en) * | 2019-06-05 | 2019-08-13 | 湖南大合新材料有限公司 | A kind of polishing process of cadmium zinc telluride crystal wafer |
| CN110788710A (en) * | 2019-10-16 | 2020-02-14 | 中国电子科技集团公司第十一研究所 | Tellurium-zinc-cadmium crystal surface grinding and polishing device |
| CN113211306A (en) * | 2021-05-28 | 2021-08-06 | 福建晶安光电有限公司 | Ceramic carrier disc for polishing semiconductor wafer |
| CN113880429A (en) * | 2021-09-28 | 2022-01-04 | 彩虹显示器件股份有限公司 | Alkali-free substrate glass and thinning method thereof |
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| CN113880429A (en) * | 2021-09-28 | 2022-01-04 | 彩虹显示器件股份有限公司 | Alkali-free substrate glass and thinning method thereof |
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Application publication date: 20160323 |