CN100530593C - Method for cutting crystal wafer - Google Patents
Method for cutting crystal wafer Download PDFInfo
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- CN100530593C CN100530593C CNB2007101098810A CN200710109881A CN100530593C CN 100530593 C CN100530593 C CN 100530593C CN B2007101098810 A CNB2007101098810 A CN B2007101098810A CN 200710109881 A CN200710109881 A CN 200710109881A CN 100530593 C CN100530593 C CN 100530593C
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- wafer
- cutting
- glued membrane
- crystal grain
- crystal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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Abstract
A wafer cutting method includes: prepare a wafer of a front surface and back surface, the front surface is of several vertical and horizontal cutting grooves to definite several grains; prepare a complex adhesive film sticking to the front surface, which is composed by a premier adhesive film and a secondary adhesive film, and the secondary film is transparent and in between the premier film and the front surface; rubbing the back surface; removing the premier film, and cutting along the grooves to separate the grains.
Description
Technical field
The present invention relates to a kind of method of cutting crystal wafer, particularly about a kind of method of utilizing the compound cutan cutting crystal wafer, its compound cutan can avoid polluting the active surface of this wafer.
Background technology
In semiconductor packing process, normally earlier wafer is cut into many crystal grain (die) 12, again these crystal grain are made the different semiconductor package of function.Fig. 1 to Fig. 6 has shown the method for existing a kind of cutting crystal wafer.At first, provide a wafer 10, this wafer 10 has an active surface 16 and a back side 14 (Fig. 2).Then, as shown in Figure 1, grind adhesive tape 20 with one and paste on the active surface 16 of this wafer 10.Then, as shown in Figure 2, by the back side 14 of mechanical lapping equipment 50 grinding (grinding) these wafers 10.Then, as shown in Figure 3, all rubber tapping band (Dicing Tape) 40 are pasted on the back side 14 of this wafer 10 after the grinding, this dicing tape 40 comprises a counterdie 42 and a crystal grain mucous membrane (Die Attach Film; DAF) 44.Then, as shown in Figure 4, the active surface 16 of this grinding adhesive tape 20 from this wafer 10 removed, and this wafer 10 is fixed on the wafer frame 18 by this dicing tape 40.Then, as shown in Figure 5, with the cutter 30 of a separate machine along Cutting Road 32 cutting crystal wafers 10, to separate crystal grain 12.At last, as shown in Figure 6, move the crystal grain 12 that (Pick Up) cuts gained with vacuum cup lifter 60, to finish the unification of crystal grain 12, wherein this crystal grain mucous membrane 44 is still attached on this crystal grain 12.In addition, Fig. 7 to 8 has further shown the conventional semiconductor packages structure making process.As shown in Figure 7, utilize this vacuum cup lifter 60, this crystal grain 12 that is attached with this crystal grain mucous membrane 44 is moved on a substrate 70 or the lead frame (figure does not show), and this crystal grain 12 is fixed on this substrate 70 by heating this crystal grain mucous membrane 44.Then, as shown in Figure 8, remove this vacuum cup lifter 60, and clean the active surface 16 of this wafer 10 by an electricity slurry manufacturing process for cleaning (Plasma Clean Process).At last, by a bonding wire routing processing procedure (Wire Bonding Process) and an adhesive body processing procedure, finish the semiconductor encapsulating structure.
Yet, with regard to the method for existing cutting crystal wafer, when the thin wafer of cutting, crystal grain (Die Chipping) phenomenon of bursting apart takes place easily.In addition, the method for existing cutting crystal wafer, its cutting chip can pollute the active surface of this crystal grain.Therefore, the conventional semiconductor packages structure making process must utilize an electricity slurry manufacturing process for cleaning again, cleans the active surface of this wafer, will increase processing procedure time and cost like this.
Therefore, be necessary to provide a kind of method of improved cutting crystal wafer, to overcome the above-mentioned shortcoming that prior art exists.
Summary of the invention
The object of the present invention is to provide a kind of method of cutting crystal wafer, this method has been utilized a compound cutan, thereby can avoid cutting the active surface of this wafer of debris contamination in the cutting processing procedure.
Another object of the present invention is to provide a kind of method of cutting crystal wafer, this method has been utilized a compound cutan, and this compound cutan can support thin wafer, thereby is difficult for taking place the phenomenon that crystal grain bursts apart when cutting.
For achieving the above object, the invention provides a kind of method of cutting crystal wafer, comprise the following steps: to provide a wafer, this wafer has an active surface, a back side and several vertical and horizontal Cutting Roads, wherein these Cutting Roads are positioned on this active surface, to define several crystal grain; One compound cutan is provided, attaches the active surface of this compound cutan in this wafer, this compound cutan comprises one first glued membrane and one second glued membrane, and this second glued membrane is between the active surface of this first glued membrane and this wafer, and this second glued membrane is transparent; Grind the back side of this wafer; Remove this first glued membrane; And be attached with this wafer of this second glued membrane along the cutting of these Cutting Roads, to separate these crystal grain.
Compared with prior art, the method for cutting crystal wafer of the present invention has been utilized a compound adhesive, and this compound cutan can play a role in the cutting processing procedure, avoids cutting the active surface of this wafer of debris contamination, and problems such as foreign matter or scratch.In addition, this compound cutan can support thin wafer, thereby is difficult for taking place the burst apart phenomenon of (Die Chipping) of crystal grain in when cutting.
The present invention is further illustrated below in conjunction with accompanying drawing and embodiment.
Description of drawings
Fig. 1 to Fig. 6 is the schematic perspective view of existing cutting crystal wafer method.
Fig. 7 to Fig. 8 is the schematic perspective view of existing semiconductor package manufacture method.
Fig. 9 is the flow chart of method of the cutting crystal wafer of one embodiment of the invention.
Figure 10 A is the schematic perspective view of the method for the present invention's cutting crystal wafer embodiment illustrated in fig. 9.
Figure 10 B is the generalized section that amplify the part of wafer shown in Figure 10 A and compound adhesive tape A part.
Figure 11 to Figure 15 is the schematic perspective view of the method for the present invention's cutting crystal wafer embodiment illustrated in fig. 9.
Figure 16 utilizes the method for cutting crystal wafer of the present invention to make the method flow diagram of an embodiment of semiconductor package.
Figure 17 to Figure 18 is the schematic perspective view of semiconductor package manufacture method embodiment illustrated in fig. 16.
Figure 19 utilizes the method for cutting crystal wafer of the present invention to make the method flow diagram of another embodiment of semiconductor package.
Embodiment
Relevant detailed description of the present invention and technology contents, existing as follows with regard to accompanying drawings:
Please refer to Fig. 9, Fig. 9 has shown the method for the cut workpiece (for example wafer) of one embodiment of the invention.At first, in step 102, shown in Figure 10 A, one wafer 210 is provided, this wafer 210 has an active surface 216, a back side 214 and several vertical and horizontal Cutting Roads 232, wherein this back side 214 is with respect to this active surface 216, and these Cutting Roads 232 are positioned on this active surface 216, to define several crystal grain 212.The active surface 216 of this wafer 210 is provided with integrated circuit (Integrated Circuit; IC) (figure does not show).
In step 104, shown in Figure 10 A, a compound cutan 220 is attached on the active surface 214 of this wafer 210.This compound cutan 220 comprises first glued membrane 222 and second glued membrane 226, this second glued membrane 226 is between the active surface 216 of this first glued membrane 222 and this wafer 210, viscous force between this first glued membrane 222 and this second glued membrane 226 is less than the viscous force between this second glued membrane 226 and this wafer 210, and this second glued membrane 226 is transparent.Shown in Figure 10 B, this first glued membrane 222 comprises one first base material 223 and one first glutinous layer 224, and this second glued membrane 226 comprises one second base material 227 and one second glutinous layer 228.The stickiness of this first glutinous layer 224 is less than the stickiness of this second glutinous layer 228.Preferably, the thickness of this first base material 223 is about 90 μ m, and the thickness of this first glutinous layer 224 is about 10 μ m, and the thickness of this second base material 227 is about 90 μ m, and the thickness of this second glutinous layer 228 is about 20 μ m.This first glued membrane 222 is general grinding adhesive tape.Second base material 227 of this second glued membrane 226 is transparent, and is made by the material of a predetermined hardness, and is not yielding, to avoid wafer 210 warpages.The second glutinous layer 228 of this second glued membrane 226 is transparent, and can remove its stickiness by heat energy or ultraviolet ray (UV) light, and wherein this heat energy obtains by being heated to 130～150 degree Celsius approximately.
In step 106, as shown in figure 11, the back side 214 that utilizes a mechanical lapping equipment 250 to grind this wafer 210 makes this wafer 210 reach a predetermined thickness.In step 108, as shown in figure 12, all rubber tapping are attached on the back side 214 of this wafer 210 after the grinding with 240, wherein this dicing tape 240 comprises a counterdie 242 and a crystal grain mucous membrane 244, the stickiness of this counterdie 242 is less than this crystal grain mucous membrane 244.In step 110, as shown in figure 13, this first glued membrane 222 this second glued membrane 226 from this wafer 210 is removed, and this wafer 210 is fixed on the wafer frame 218 by this dicing tape 240.Because the viscous force between this first glued membrane 222 and this second glued membrane 226 is less than the viscous force between this second glued membrane 226 and this wafer 210, thus this second glued membrane 226 still can active surface 216 attached to this wafer 210 on.
In step 114, as shown in figure 14, be attached with this wafer 210 of this second glued membrane 226 with the cutter 230 of a separate machine along these Cutting Roads 232 cuttings, to separate crystal grain 212.Because this second glued membrane 226 is transparent, therefore this second glued membrane 226 not only can not hinder cutter 230 along these Cutting Road 232 these wafers 210 of cutting, also can in the cutting processing procedure, play a role on the contrary, can avoid cutting the active surface 216 of this wafer 210 of debris contamination.In addition, this second glued membrane 226 can support thin wafer, and the burst apart phenomenon of (Die Chipping) of crystal grain be difficult for to take place during cutting.
In step 116, as shown in figure 15, move the crystal grain 212 that (Pick Up) cutting obtains, and remove from this counterdie 242 with vacuum cup lifter 260, to finish the unification of crystal grain 212, wherein be attached with this second glued membrane 226 and this crystal grain mucous membrane 244 on this crystal grain 212.Because the stickiness of this counterdie 242 is less than this crystal grain mucous membrane 244, so this crystal grain mucous membrane 244 still can be attached on this crystal grain 212.
Compared with prior art, the method for the cutting crystal wafer of the embodiment of the invention has been utilized a compound cutan, and this compound cutan can play a role in the cutting processing procedure, avoids cutting the active surface of this wafer of debris contamination, and problems such as foreign matter or scratch.In addition, this compound cutan can support thin wafer, and crystal grain (Die Chipping) phenomenon of bursting apart be difficult for to take place during cutting.
Figure 16 has shown the method flow diagram of an embodiment of the method manufacturing semiconductor package that utilizes cutting crystal wafer of the present invention.In step 118, as shown in figure 17, utilize this vacuum cup lifter 260, this crystal grain 212 that is attached with this second glued membrane 226 and this crystal grain mucous membrane 244 described in the step 116 of the method for above-mentioned cutting crystal wafer is moved on the support plate 270, this support plate 270 is a substrate or lead frame.Then, in step 120, handle this crystal grain mucous membrane 244, this crystal grain 212 is fixed on this support plate 270, and handles this second glued membrane 226, make this second glued membrane 226 remove stickiness by this processing mode by a processing mode.For example, this crystal grain mucous membrane 244 can produce curing by heat energy (being heated to 130～150 degree Celsius approximately) or ultraviolet ray (UV) light, and the second glutinous layer 228 of this second glued membrane 226 also can be removed its stickiness by heat energy (being heated to 130～150 degree Celsius approximately) or ultraviolet ray (UV) light.In step 122, as shown in figure 18, utilize this vacuum cup lifter 260 to remove this second glued membrane 226.At last, in step 124,, finish the semiconductor encapsulating structure by an encapsulation procedure.For example, this encapsulation procedure comprises a bonding wire routing processing procedure and an adhesive body processing procedure.
Figure 19 has shown the method flow diagram of another embodiment of the method manufacturing semiconductor package that utilizes cutting crystal wafer of the present invention.This semiconductor package manufacture method comprises the following steps: in step 312, and the crystal grain mucous membrane of this crystal grain described in the step 116 of the method for above-mentioned cutting crystal wafer is removed stickiness.In step 314, remove this crystal grain mucous membrane.In step 316, an elargol is configured on the support plate, this support plate can be a substrate or lead frame.In step 318, utilize vacuum cup lifter, this crystal grain that is attached with this second glued membrane is moved on this support plate.Then, in step 320, handle this elargol, this crystal grain is fixed on this support plate, and handle this second glued membrane, make this second glued membrane remove stickiness by this processing mode by a processing mode.For example, this elargol can produce curing by heat energy (being heated to 130～150 degree Celsius approximately) or ultraviolet ray (UV) light, and the second glutinous layer of this second glued membrane also can be removed its stickiness by heat energy (being heated to 130～150 degree Celsius approximately) or ultraviolet ray (UV) light.In step 322, utilize this vacuum cup lifter to remove this second glued membrane.At last, in step 324,, finish the semiconductor encapsulating structure by an encapsulation procedure.For example, this encapsulation procedure comprises a bonding wire routing processing procedure and an adhesive body processing procedure.
Compared with prior art, because the method profit of cutting crystal wafer of the present invention With a compound cutan, second glued membrane of this compound cutan can play a role, Avoiding polluting the active surface of this wafer, and foreign matter or scratch etc. are asked Topic. Therefore, utilize the method for cutting crystal wafer of the present invention to make semiconductor Do not need to recycle an electricity slurry manufacturing process for cleaning during encapsulating structure and clean this wafer Active surface, thereby can not increase processing procedure time and cost.
Claims (12)
1, a kind of method of cutting crystal wafer comprises providing a wafer, described wafer to have an active surface, a back side and several vertical and horizontal Cutting Roads that wherein said Cutting Road is positioned on the described active surface, to define several crystal grain; It is characterized in that: the method for described cutting crystal wafer further comprises the following steps:
One compound cutan is provided, attach the active surface of described compound cutan in described wafer, wherein said compound cutan comprises one first glued membrane and one second glued membrane, and described second glued membrane is between the active surface of described first glued membrane and described wafer, and described second glued membrane is transparent;
Grind the back side of described wafer;
Remove described first glued membrane, but keep described second glued membrane on the active surface of described wafer; And
Be attached with the described wafer of described second glued membrane along the cutting of described Cutting Road, to separate described crystal grain;
Move the crystal grain of cutting gained, and described crystal grain is fixed on the support plate; And
Handle described second glued membrane, make described second glued membrane remove stickiness, and remove described second glued membrane by the active surface of described crystal grain.
2, the method for cutting crystal wafer as claimed in claim 1 is characterized in that viscous force between described first glued membrane and described second glued membrane is less than the viscous force between described second glued membrane and the described wafer.
3, the method for cutting crystal wafer as claimed in claim 1 is characterized in that described first glued membrane further comprises one first base material and one first glutinous layer, and described second glued membrane comprises one second base material and one second glutinous layer.
4, the method for cutting crystal wafer as claimed in claim 3 is characterized in that the stickiness of the stickiness of the described first glutinous layer less than the described second glutinous layer.
5, the method for cutting crystal wafer as claimed in claim 1 is characterized in that described first glued membrane is a grinding adhesive tape.
6, the method for cutting crystal wafer as claimed in claim 3 is characterized in that described second glutinous layer is removed its stickiness by heat energy.
7, the method for cutting crystal wafer as claimed in claim 6 is characterized in that described heat energy obtains by being heated to 130～150 degree Celsius.
8, the method for cutting crystal wafer as claimed in claim 3 is characterized in that the described second glutinous layer removes its stickiness by ultraviolet (UV) light.
9, the method for cutting crystal wafer as claimed in claim 1 is characterized in that after the step at the back side of grinding described wafer and before removing the step of described first glued membrane, further comprises the following steps:
All rubber tapping films are attached on the back side of the described wafer after the grinding, and described cutting glued membrane comprises a counterdie and a crystal grain mucous membrane.
10, the method for cutting crystal wafer as claimed in claim 9, it is characterized in that after the step that attaches described cutting glued membrane, and when the step of the crystal grain that moves the cutting gained, be attached with described second glued membrane and described crystal grain mucous membrane on the wherein said crystal grain.
11, the method for cutting crystal wafer as claimed in claim 10 is characterized in that further comprising the following steps: when the step of the crystal grain that moves the cutting gained
Handle described crystal grain mucous membrane, described crystal grain is fixed on the described support plate to utilize described crystal grain mucous membrane.
12, the method for cutting crystal wafer as claimed in claim 10 is characterized in that further comprising the following steps: when the step of the crystal grain that moves the cutting gained
Handle described crystal grain mucous membrane, make described crystal grain mucous membrane remove stickiness, remove described crystal grain mucous membrane by the back side of described crystal grain;
One elargol is configured on the support plate; And
Utilize described elargol that described crystal grain is fixed on the described support plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101098810A CN100530593C (en) | 2007-06-01 | 2007-06-01 | Method for cutting crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101098810A CN100530593C (en) | 2007-06-01 | 2007-06-01 | Method for cutting crystal wafer |
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| Publication Number | Publication Date |
|---|---|
| CN101075580A CN101075580A (en) | 2007-11-21 |
| CN100530593C true CN100530593C (en) | 2009-08-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007101098810A Active CN100530593C (en) | 2007-06-01 | 2007-06-01 | Method for cutting crystal wafer |
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Families Citing this family (17)
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| US7642128B1 (en) | 2008-12-12 | 2010-01-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP |
| US9064936B2 (en) | 2008-12-12 | 2015-06-23 | Stats Chippac, Ltd. | Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP |
| US9082806B2 (en) * | 2008-12-12 | 2015-07-14 | Stats Chippac, Ltd. | Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP |
| US9293401B2 (en) | 2008-12-12 | 2016-03-22 | Stats Chippac, Ltd. | Semiconductor device and method for forming a low profile embedded wafer level ball grid array molded laser package (EWLP-MLP) |
| CN102044404B (en) * | 2009-10-12 | 2015-12-09 | 桑迪士克科技公司 | To tape the system be separated for making semiconductor die and nude film through cutting |
| TWI479556B (en) * | 2010-05-07 | 2015-04-01 | Alpha & Omega Semiconductor Cayman Ltd | Ultra thin wafer die attach method |
| CN103240806A (en) * | 2012-02-06 | 2013-08-14 | 奇景光电股份有限公司 | Wafer cutting method |
| CN104465903B (en) * | 2014-12-16 | 2017-05-17 | 马鞍山太时芯光科技有限公司 | Film uncovering agent, film uncovering agent preparation method and LED chip film pouring loss reduction method |
| CN105742244A (en) * | 2016-03-31 | 2016-07-06 | 吉林华微电子股份有限公司 | Broken edge blocking method during splitting of silicon wafers |
| CN108500826A (en) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | Wafer reverse side grinding method |
| CN109909623A (en) * | 2017-12-12 | 2019-06-21 | 中芯国际集成电路制造(北京)有限公司 | Cutting method for wafer |
| CN111180322B (en) * | 2018-11-13 | 2022-05-31 | 华邦电子股份有限公司 | Method for cutting wafer |
| CN111696968B (en) * | 2019-03-14 | 2022-06-24 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor structure |
| CN111599743B (en) * | 2020-07-06 | 2024-05-28 | 绍兴同芯成集成电路有限公司 | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure |
| CN112635412A (en) * | 2020-12-21 | 2021-04-09 | 苏州日月新半导体有限公司 | Semiconductor structure and method for manufacturing semiconductor structure |
| CN112798931A (en) * | 2020-12-31 | 2021-05-14 | 苏州日月新半导体有限公司 | Novel integrated circuit failure analysis and detection method |
| CN113523597B (en) * | 2021-07-08 | 2022-07-19 | 湖北三维半导体集成制造创新中心有限责任公司 | Wafer cutting method |
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2007
- 2007-06-01 CN CNB2007101098810A patent/CN100530593C/en active Active
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| CN101075580A (en) | 2007-11-21 |
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