TW202227223A - Wafer grinding method - Google Patents

Abstract

The present application provides a wafer grinding method comprising the following steps: a washing step: providing a wafer and washing the wafer's back surface; a loading step: loading the wafer to a grinding chamber and attaching the wafer's back surface to a vacuum chuck; a grinding step: detaching the wafer from the vacuum chuck and grinding double surfaces of the wafer; an unloading step: unloading the wafer from the grinding chamber. In the present application, the additional washing step for the wafer's back surface is applied prior to the grinding step, so that the residual cutting fluid or particles caused by the previous processing can be removed by the washing liquid and the brush rub, and the clearance of the wafer's back surface can be enhanced. It prevents the formation of defects on the wafer's back surface caused by the residual particles between the vacuum chuck and the wafer. Accordingly, the effect of the grinding process can be improved, and the quality of the produced wafer and the product yield can be enhanced.

Description

A kind of wafer grinding method

The present invention relates to the field of semiconductor technology, in particular to a method for grinding wafers.

High-purity crystalline silicon is a good semiconductor material. After doping and modification, it can be widely used in solar cells, diodes, triodes, field effect transistors and various integrated circuit components. With the rapid development of semiconductor devices, the requirements for crystalline silicon wafers are also getting higher and higher. The traditional silicon wafer processing process includes: single crystal growth, cutting, outer diameter grinding, slicing, chamfering, grinding, etching, polishing, cleaning, packaging. In the process of silicon wafer processing, trace metal elements (Fe, Cr, Ni, Cu), scratches, damaged layers and surface contamination will be introduced, which will increase the electronic recombination during the working process of the components and shorten the working life of the semiconductor components, thereby affecting the component performance.

The purpose of silicon wafer grinding is to remove the 20-50 micrometer (µm) surface damage layer caused by dicing during the slicing process, and to make the silicon wafer have a flat surface with a certain geometrical accuracy. Since silicon wafers are usually cleaned in a pure water tank during the front-end slicing, degumming, and cleaning processes, there are a lot of residual particles such as cutting fluid and silicon carbide chips between silicon wafers. These substances will be mixed between silicon wafers and cannot be completely removed. , When entering the grinding chamber for subsequent grinding processing, the adhered particles will prevent the backside of the silicon wafer from being directly adsorbed on the ceramic plate of the grinding chamber, and cause defect damage on the backside of the silicon wafer during the adsorption process, resulting in the semiconductor silicon wafer in the working process. The recombination current increases, thereby reducing the yield of the product.

Therefore, how to provide a wafer grinding method to reduce wafer backside defects generated in the vacuum adsorption process has become an important technical problem to be solved urgently by those skilled in the art.

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a wafer grinding method, which is used to solve the problem that the residual particles contained between the wafers cannot be completely removed when the wafers are degummed and cleaned in the prior art. In the subsequent wafer vacuum adsorption process, defect damage will be caused to the backside of the wafer, resulting in a problem of reduced product yield.

In order to achieve the above purpose and other related purposes, the present invention provides a wafer grinding method, comprising the following steps: The step of cleaning the back of the wafer: providing a wafer, and cleaning the back of the wafer; Wafer loading step: load the wafer into the grinding chamber, and use a vacuum adsorption component to adsorb the back of the wafer; Wafer grinding step: stop the adsorption of the vacuum adsorption component to the back of the wafer, and use a grinding component to grind both sides of the wafer; The wafer carrying-out step: after the grinding is completed, the wafer is carried out of the grinding chamber.

In one embodiment, in the step of cleaning the backside of the wafer, a cleaning solution is applied to the backside of the wafer, and a brush is used to rub the backside of the wafer.

In one embodiment, the cleaning solution includes one or more of pure water and alcohol.

In one embodiment, a spray member is used to apply the cleaning liquid to the back of the wafer, the spray member includes a spray rod, and the end of the spray rod is provided with an opening that allows the cleaning liquid to be sprayed out. In the wafer backside cleaning step, the backside of the wafer faces downward, and the opening is located below the wafer.

In one embodiment, the spray rod moves in a horizontal telescopic manner or in a horizontal swing manner, so that the cleaning liquid moves according to a preset trajectory.

In one embodiment, the brush rubs the backside of the wafer in a rotating manner, and in the step of cleaning the backside of the wafer, the wafer and the brush rotate in opposite directions.

In one embodiment, the brush rubs the back of the wafer in a rotating manner, and in the cleaning step of the back of the wafer, the wafer is fixed, and the brush rotates while rotating around the wafer. Revolutionary movement, the revolution direction is clockwise or counterclockwise.

In one embodiment, the position of the rotation axis of the wafer passes through the geometric center of the wafer and is perpendicular to the horizontal plane where the wafer is located, and the position of the rotation axis of the brush passes through the geometric center of the brush , and perpendicular to the horizontal plane where the brush is located, the vertical distance between the position of the rotation axis of the brush and the outer edge of the wafer is not less than a quarter of the diameter of the wafer.

In one embodiment, the brush material includes at least one of natural wool and man-made fibers.

In one embodiment, in the wafer loading step, a vacuum arm is used to adsorb the front side of the wafer to load the wafer into the grinding chamber. After the back side, the suction of the front side of the wafer by the vacuum arm is stopped; in the wafer loading step, the vacuum suction part is used to absorb the back side of the wafer again, and then the vacuum arm is used to absorb the wafer again. the front side of the wafer, after the vacuum arm adsorbs the front side of the wafer, the vacuum suction part stops the adsorption of the back side of the wafer.

In one embodiment, after the wafer unloading step, a wafer cleaning step is further included.

In one embodiment, the wafer cleaning step includes applying a cleaning solution to the front and/or back of the wafer, and rubbing the front and/or back of the wafer with a brush.

As described above, the wafer grinding method of the present invention adds a wafer back cleaning step before the wafer double-sided grinding step, applies a cleaning solution to the back of the wafer, and introduces a brush to rotate and rub the back of the wafer, so that the front The cutting fluid and particles remaining in the process are removed from the back of the wafer as much as possible, so as to effectively keep the back of the wafer clean and avoid residual particles in the vacuum adsorption components and the back of the wafer during the subsequent vacuum adsorption process. Cause scratches and mechanical damage on the back of the wafer, thereby effectively improving the effect of the grinding process and the quality of the wafer, and improving the yield of the product. The present invention has a simple manufacturing process, only needs to add a brush cleaning step in the existing semiconductor wafer grinding process, can continue to be compatible with the subsequent grinding process, and has the advantage of high industrial integration. The cleaning operation of the backside of the wafer in the present invention is convenient, the cost of the equipment used is low, and the particles on the surface of the wafer can be effectively removed. Under the current normal conditions, the wafer backside cleaning step is added, and the particle defects are reduced by about 66% compared with the process conditions without backside cleaning.

The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

See Figures 1 to 5. It should be noted that the drawings provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the drawings only show the components related to the present invention rather than the number, shape and the number of components in actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.

Example 1

In this embodiment, a wafer grinding method is provided. Please refer to FIG. 1 , which shows a process flow diagram of the method, including the following steps: S1: wafer backside cleaning step: providing a wafer and cleaning the backside of the wafer; S2: Wafer loading step: loading the wafer into the grinding chamber, and using a vacuum adsorption component to adsorb the back of the wafer; S3: Wafer grinding step: stop the suction of the vacuum suction member to the back of the wafer, and use the grinding member to grind both sides of the wafer; and S4: Wafer carrying out step: after grinding, the wafer is carried out of the grinding chamber.

First, referring to FIG. 2 , step S1 is performed: a wafer 1 is provided, a cleaning solution 4 is applied to the back of the wafer 1 , and a brush 2 is used to rub the back of the wafer 1 .

As an example, the material of the wafer includes, but is not limited to, silicon. In this embodiment, the wafer is taken as an example of a silicon wafer, and the silicon wafer includes but is not limited to monocrystalline silicon, wherein the monocrystalline silicon orientation is <100>.

By way of example, the wafers can range in thickness from 200 µm to 10 mm and have dimensions of 6 inches, 8 inches, 12 inches, or other dimensions.

As an example, the vacuum suction component includes a ceramic plate, which is used for backside suction during silicon wafer grinding.

As an example, the cleaning solution includes, but is not limited to, one or more of pure water and alcohol, and the specific formula can be adjusted based on the characteristics of the residue on the backside of the wafer.

As an example, the cleaning liquid is applied to the backside of the wafer using a spraying member, the spraying member includes a spraying rod 5, and the end of the spraying rod 5 is provided with an opening for allowing the cleaning liquid 4 to be sprayed out.

As an example, during the cleaning process of the backside of the wafer, the backside of the wafer 1 faces down, and the opening of the spray bar 5 is located below the wafer 1, so that the cleaned particulate matter and excess cleaning solution can be stored in the Under the action of its own gravity and centrifugal force, it is quickly taken away to prevent secondary pollution.

As an example, in the cleaning process of the backside of the wafer, in order to improve the cleaning efficiency, the spray rod 5 can be moved in a certain manner, for example, in a horizontal telescopic manner or in a horizontal swing manner, so that the cleaning liquid 4 can move according to the predetermined Set trajectory motion.

As an example, the brush 2 rubs the back surface of the wafer 1 in a rotating manner, and the physical rubbing method can more effectively take away the particles.

As an example, please refer to FIG. 2 , during rotary cleaning, the wafer 1 and the brush 2 rotate in opposite directions, which can improve the cleaning efficiency of surface particles. After the wafer 1 rotates once, all the areas on the back of the wafer 1 are brushed by the brush 2 to ensure that the impurity particles on the back of the wafer can be quickly removed.

As an example, the position of the rotation axis of the wafer 1 passes through the geometric center of the wafer and is perpendicular to the horizontal plane where the wafer 1 is located, and the position of the rotation axis of the brush 2 passes through the geometric center of the brush 2 center, and perpendicular to the horizontal plane where the brush 2 is located, the horizontal distance between the position of the rotation axis of the brush 2 and the outer edge of the silicon wafer is not less than a quarter of the diameter of the wafer 1, ensuring that When the wafer 1 and the brush 2 rotate relative to one cycle, the brush 2 can cover all areas of the back surface of the wafer 1 at least once.

As an example, the cleaning time of the wafer 1 using the brush 2 is 2 minutes (min), which can be adjusted according to the contamination situation.

As an example, the material of the brush 2 includes but is not limited to at least one of natural wool and man-made fibers. The natural wool includes but is not limited to bristles, which are excellent in durability and water resistance, and are also anti-static, high temperature resistant and Acid and alkali to avoid secondary pollution to the wafer during the scrubbing process of wafer 1. The man-made fibers include but are not limited to nylon, which is cheap and has good recovery and abrasion resistance.

As an example, the type of the brush 2 includes, but is not limited to, one of a bar brush, a disc brush, a brush roller and a brush wheel.

Then refer to Figure 1, and execute steps S2~S4: S2: Wafer loading step: loading the wafer into the grinding chamber, and using a vacuum adsorption component to adsorb the back of the wafer; S3: Wafer grinding step: stop the adsorption of the vacuum adsorption component to the back of the wafer, and use a grinding component (not shown) to grind both sides of the wafer; S4: Wafer carrying out step: after grinding, the wafer is carried out of the grinding chamber.

As an example, in the wafer loading step, a vacuum arm (not shown) is used to suck the front side of the wafer to load the wafer into the grinding chamber, and when the vacuum suction part sucks the wafer After the back side of the circle, the suction of the front side of the wafer by the vacuum arm is stopped.

As an example, in the wafer unloading step, the backside of the wafer is again adsorbed by the vacuum suction part, and then the front side of the wafer is again adsorbed by the vacuum arm. After the front side of the wafer, the suction of the back side of the wafer by the vacuum suction member is stopped.

As an example, the vacuum suction component includes a ceramic plate 7 . In this embodiment, the backside of the wafer 1 is adsorbed on the surface of the ceramic plate 7 before the grinding starts and after the grinding is completed.

As an example, in the grinding process, the carrier 6 is used to drive the wafer 1 to rotate.

As an example, the range of the vacuum suction pressure difference when the vacuum suction member suctions the backside of the wafer is 2E4-9E7 (2×10 ⁴ ˜9×10 ⁷ ) Pascals. During the vacuum adsorption process, the pressure at the contact point between the adsorption part and the wafer is low, and due to the effect of the internal and external pressure difference, a large adsorption force will be generated, and the surface of the wafer should be kept clean to avoid unnecessary scratches.

As an example, please refer to FIG. 3 , which is a schematic diagram of the structure of a wafer whose back has not been cleaned in a ground state. Since there are residual particles 3 attached to the back of the wafer, and the hardness of the ceramic plate 7 is much greater than that of the wafer, During the adsorption process, due to the effect of vacuum pressure, the residual particles 3 located between the backside of the wafer and the ceramic plate will cause defect damage to the backside of the wafer. However, in the present invention, since the backside of the wafer is cleaned before the grinding step, the cutting fluid and residual particles remaining in the previous process are removed as much as possible (as shown in FIG. 4 ), which can effectively reduce the backside of the wafer. Scratches and mechanical damage. The experimental results show that, compared with the wafer grinding method without the wafer back cleaning step, the particle defects of the wafers prepared by the wafer back cleaning step of the present invention are reduced by about 66%.

Embodiment 2

This embodiment adopts basically the same technical solution as the first embodiment, and the difference lies in that, in this embodiment, a wafer cleaning step is further performed after the wafer grinding step.

In this embodiment, a wafer grinding method is provided. Please refer to FIG. 5 , which shows a process flow diagram of the method, including the following steps: S1: wafer backside cleaning step: providing a wafer and cleaning the backside of the wafer; S2: Wafer loading step: loading the wafer into the grinding chamber, and using a vacuum adsorption component to adsorb the back of the wafer; S3: Wafer grinding step: stop the adsorption of the vacuum adsorption component to the back of the wafer, and use a grinding component to grind both sides of the wafer; S4: Wafer carrying out step: after grinding, the wafer is carried out of the grinding chamber. S5: Wafer cleaning step.

Referring first to FIG. 2 , step S1 is performed: wafer backside cleaning step: a wafer 1 is provided, a cleaning solution 4 is applied to the backside of the wafer 1 , and a brush 2 is used to rub the backside of the wafer 1 .

As an example, the material of the wafer includes, but is not limited to, silicon. In this embodiment, the wafer is taken as an example of a silicon wafer, and the silicon wafer includes but is not limited to monocrystalline silicon, wherein the monocrystalline silicon orientation is <100>.

By way of example, the wafers can range in thickness from 200 µm to 10 mm and have dimensions of 6 inches, 8 inches, 12 inches, or other dimensions.

As an example, the cleaning solution includes, but is not limited to, one or more of pure water and alcohol, and the specific formula can be adjusted based on the characteristics of the residue on the backside of the wafer.

As an example, the cleaning liquid is applied to the backside of the wafer using a spraying member, the spraying member includes a spraying rod 5, and the end of the spraying rod 5 is provided with an opening for allowing the cleaning liquid 4 to be sprayed out.

As an example, during the cleaning process of the backside of the wafer, the backside of the wafer 1 faces down, and the opening of the spray bar 5 is located below the wafer 1, so that the cleaned particulate matter and excess cleaning solution can be stored in the Under the action of its own gravity and centrifugal force, it is quickly taken away to prevent secondary pollution.

As an example, in the cleaning process of the backside of the wafer, in order to improve the cleaning efficiency, the spray rod 5 can be moved in a certain manner, for example, in a horizontal telescopic manner or in a horizontal swing manner, so that the cleaning liquid 4 can move according to the predetermined Set trajectory motion.

As an example, the brush 2 rubs the back surface of the wafer 1 in a rotating manner, and the physical rubbing method can more effectively take away the particles.

As an example, please refer to FIG. 2 , during rotary cleaning, the wafer 1 and the brush 2 rotate in opposite directions, which can improve the cleaning efficiency of surface particles. After the wafer 1 rotates once, all the areas on the back of the wafer 1 are brushed by the brush 2 to ensure that the impurity particles on the back of the wafer can be quickly removed.

As an example, the position of the rotation axis of the wafer 1 passes through the geometric center of the wafer and is perpendicular to the horizontal plane where the wafer 1 is located, and the position of the rotation axis of the brush 2 passes through the geometric center of the brush 2 center, and perpendicular to the horizontal plane where the brush 2 is located, the horizontal distance between the position of the rotation axis of the brush 2 and the outer edge of the silicon wafer is not less than a quarter of the diameter of the wafer 1, ensuring that When the wafer 1 and the brush 2 rotate relative to one cycle, the brush 2 can cover all areas of the back surface of the wafer 1 at least once.

As an example, the cleaning time of the wafer 1 using the brush 2 is 2 minutes (min), which can be adjusted according to the contamination situation.

As an example, the material of the brush 2 includes, but is not limited to, at least one of natural wool and man-made fibers. The natural wool includes but is not limited to bristles, which have excellent durability and water resistance, and are also anti-static and high temperature resistant. and acid and alkali to avoid secondary pollution to the wafer during the scrubbing process of wafer 1. The man-made fibers include but are not limited to nylon, which is cheap and has good recovery and abrasion resistance.

As an example, the type of the brush 2 includes, but is not limited to, one of a bar brush, a disc brush, a brush roller and a brush wheel.

Then refer to Figure 5, and execute steps S2~S4: S2: Wafer loading step: loading the wafer into the grinding chamber, and using a vacuum adsorption component to adsorb the back of the wafer; S3: Wafer grinding step: stop the adsorption of the vacuum adsorption component to the back of the wafer, and use a grinding component (not shown) to grind both sides of the wafer; S4: Wafer carrying out step: after grinding, the wafer is carried out of the grinding chamber.

As an example, in the wafer loading step, a vacuum arm (not shown) is used to suck the front side of the wafer to load the wafer into the grinding chamber, and when the vacuum suction part sucks the wafer After the back side of the circle, the suction of the front side of the wafer by the vacuum arm is stopped.

As an example, in the wafer unloading step, the backside of the wafer is again adsorbed by the vacuum suction part, and then the front side of the wafer is again adsorbed by the vacuum arm. After the front side of the wafer, the suction of the back side of the wafer by the vacuum suction member is stopped.

As an example, the vacuum suction component includes a ceramic plate 7 . In this embodiment, the backside of the wafer 1 is adsorbed on the surface of the ceramic plate 7 before the grinding starts and after the grinding is completed.

As an example, in the grinding process, the carrier 6 is used to drive the wafer 1 to rotate.

As an example, the range of the vacuum suction pressure difference when the vacuum suction member suctions the backside of the wafer is 2E4-9E7 (2×10 ⁴ ˜9×10 ⁷ ) Pascals. During the vacuum adsorption process, the pressure at the contact point between the adsorption part and the wafer is low, and due to the effect of the internal and external pressure difference, a large adsorption force will be generated, and the surface of the wafer should be kept clean to avoid unnecessary scratches.

Next, step S5 is performed: the wafer cleaning step.

As an example, the wafer cleaning step includes applying a cleaning solution to the front and/or back of the wafer, and rubbing the front and/or back of the wafer with a brush. The wafer cleaning step of the invention is simple, and the operation is convenient, which ensures that no impurities remain on the wafer surface after the grinding step.

Embodiment 3

This embodiment adopts basically the same technical solution as Embodiment 1 or Embodiment 2, the difference is that in this embodiment, another rotation method is used when the brush is cleaned.

As an example, please refer to FIG. 6 , during the rotary cleaning, the brush 2 rubs the back of the wafer 1 in a rotating manner. In the cleaning step of the back of the wafer, the wafer is fixed and the hair The brush rotates and revolves around the wafer at the same time, and the revolving direction is clockwise or counterclockwise. After the brush makes one revolution, all the areas on the back of the wafer are brushed by the brush to ensure that the impurity particles on the back of the wafer can be quickly removed. In this embodiment, the wafer is fixed and only the brushes are rotated. While the back of the wafer is completely cleaned, a part of the transmission work is reduced during the cleaning process. The implementation is simpler and the operation is more convenient.

To sum up, the wafer grinding method of the present invention adds a wafer backside cleaning step before the wafer grinding step, applies a cleaning solution to the backside of the wafer, and introduces a brush to rotate and rub the backside of the wafer, so that the The cutting fluid and particles remaining in the process are removed from the back of the wafer as much as possible, so as to effectively keep the back of the wafer clean and avoid residual particles caused by the vacuum adsorption components and the back of the wafer during the subsequent vacuum adsorption process. Scratches and mechanical damage on the backside of the wafer can effectively improve the effect of the grinding process and the quality of the wafer, and improve the yield of the product. The present invention has a simple manufacturing process, only needs to add a brush cleaning step in the existing semiconductor wafer grinding process, can continue to be compatible with the subsequent grinding process, and has the advantage of high industrial integration. The cleaning operation of the backside of the wafer in the present invention is convenient, the cost of the equipment used is low, and the particles on the surface of the wafer can be effectively removed. Under the current normal conditions, the wafer backside cleaning step is added, and the particle defects are reduced by about 66% compared with the process conditions without backside cleaning. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.

1: Wafer 2: brush 3: Residual particles 4: Cleaning solution 5: spray rod 6: Carrier 7: Ceramic plate

FIG. 1 is a process flow diagram of the wafer grinding method of the present invention in the first embodiment.

FIG. 2 is a schematic diagram showing the structure when the wafer backside cleaning step is performed in the first embodiment.

FIG. 3 is a schematic diagram showing the structure of a wafer whose back surface has not been cleaned in an adsorbed state.

FIG. 4 is a schematic diagram showing the structure of a wafer whose back surface has been cleaned in an adsorption state.

FIG. 5 shows a process flow diagram of the wafer grinding method of the present invention in the second embodiment.

FIG. 6 is a schematic diagram showing the structure when the wafer backside cleaning step is performed in the third embodiment.

S1-S5: Steps

Claims (11)

A wafer grinding method, comprising the following steps: The step of cleaning the back of the wafer: providing a wafer, and cleaning the back of the wafer; Wafer loading step: load the wafer into the grinding chamber, and use a vacuum adsorption component to adsorb the back of the wafer; Wafer grinding step: stopping the adsorption of the vacuum suction member to the back of the wafer, and using a grinding member to grind both sides of the wafer; and The wafer carrying-out step: after the grinding is completed, the wafer is carried out of the grinding chamber. The wafer grinding method according to claim 1, wherein, in the wafer backside cleaning step, a cleaning solution is applied to the wafer backside, and a brush is used to rub the wafer backside. The wafer grinding method according to claim 2, wherein the cleaning liquid includes one or more of pure water and alcohol. The wafer grinding method according to claim 2, wherein a cleaning liquid is applied to the back of the wafer using a spray member, the spray member includes a spray rod, and the end of the spray rod is provided with a spray rod that allows cleaning The opening for liquid ejection, in the step of cleaning the back of the wafer, the back of the wafer faces downward, and the opening is located below the wafer. The wafer grinding method according to claim 4, wherein the spray rod moves in a horizontal telescopic manner or in a horizontal swing manner, so that the cleaning liquid moves according to a preset trajectory. The wafer grinding method according to claim 2, wherein the brush rubs the backside of the wafer in a rotating manner, and in the step of cleaning the backside of the wafer, the wafer and the brush rotate in opposite directions. Rotation in the direction. The wafer grinding method according to claim 2, wherein the brush rubs the back of the wafer in a rotating manner, and in the step of cleaning the back of the wafer, the wafer is fixed, and the brush At the same time, it rotates and revolves around the wafer, and the revolving direction is clockwise or counterclockwise. The wafer grinding method according to claim 2, wherein the position of the rotation axis of the wafer passes through the geometric center of the wafer and is perpendicular to the horizontal plane where the wafer is located, and the position of the rotation axis of the brush Passing through the geometric center of the brush and perpendicular to the horizontal plane where the brush is located, the horizontal distance between the position of the rotation axis of the brush and the outer edge of the wafer is not less than four times the diameter of the wafer. one part. The wafer grinding method according to claim 2, wherein the brush material includes at least one of natural wool and man-made fibers. The wafer grinding method according to claim 1, wherein, in the wafer loading step, a vacuum arm is used to adsorb the front side of the wafer to load the wafer into a grinding chamber, and when the vacuum After the adsorption part adsorbs the back of the wafer, the vacuum arm stops the adsorption of the front of the wafer; in the wafer loading step, the vacuum adsorption part is used to adsorb the back of the wafer again, and then The front side of the wafer is adsorbed by the vacuum arm again, and after the vacuum arm adsorbs the front side of the wafer, the adsorption of the back side of the wafer by the vacuum adsorption component is stopped. The wafer grinding method according to claim 1, wherein after the wafer unloading step, a wafer cleaning step is further included; the wafer cleaning step includes applying a cleaning solution to the front surface of the wafer and/or back and rub the front and/or back of the wafer with a brush.

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