CN103035504B - Cmp method and chemical-mechanical polisher - Google Patents
Cmp method and chemical-mechanical polisher Download PDFInfo
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- CN103035504B CN103035504B CN201110302495.XA CN201110302495A CN103035504B CN 103035504 B CN103035504 B CN 103035504B CN 201110302495 A CN201110302495 A CN 201110302495A CN 103035504 B CN103035504 B CN 103035504B
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Abstract
The invention discloses a kind of cmp method and chemical-mechanical polisher.It is provided with injection apparatus on polishing block side.Before polishing block carries out chemically mechanical polishing, afterwards or between twice chemically mechanical polishing, by by cleanout fluid injection to the surface of wafer, the surface of described wafer is carried out cleaning showers.According to embodiments of the invention, owing to being injected on wafer by cleanout fluid, dynamics of cleaning increases, it is possible to significantly improve the cleaning efficiency to wafer, effectively removes the residue of wafer surface.
Description
Technical field
The present invention relates to semiconductor fabrication, particularly to cmp method and chemical-mechanical polisher.
Background technology
Chemical Mechanical Polishing Technique is the combination technique of mechanical lapping and chemical attack, and the surface being acted on wafer by the abrasive action of slurry and chemical attack forms bright and clean smooth surface.Chemical Mechanical Polishing Technique has now become and semiconductor device has carried out one of overall mainstream technology planarized.For example, typical logical device manufacturing process include seven road interlayer dielectric chemical-mechanical polishing process, seven road chemical mechanical polishing of metals operations with together with shallow trench isolation CMP process.
One complete CMP process has mainly been operated by polishing, cleaning and measurement etc..But, the pollutant such as pulp particle, Organic substance, metal ion can be formed in wafer surface after polishing operation, semiconductor device can be produced detrimental effects by these pollutant.Therefore, after chemically mechanical polishing, the cleaning of semiconductor device is become particularly significant.That cleans is intended to the residual particles in CMP process and pollution minimizing to acceptable level.
Figure 1A～1C illustrates the process that the wafer being formed with nitride and oxide carries out chemically mechanical polishing.
Referring to Figure 1A, it is formed with pseudo-grid 12 on the substrate 11, it has been sequentially depositing silicon nitride layer 13 and two-layer silicon oxide layer 14 and 15.
Referring to Figure 1B, grind silicon oxide layer 14 and 15 initially with alkaline slurry.Wherein, in order to reduce the butterfly defect of silicon oxide, it is generally adopted the silicon oxide on immobilized particles grinding technics polishing silicon nitride layer 13.
Then, Acid Slurry is adopted to remove the silicon nitride layer 13 on pseudo-grid 12, as shown in Figure 1 C.
Twice chemically mechanical polishing can form pollutant in wafer surface.Wafer can be produced detrimental effects by these pollutant, it is necessary to remove the cleannes of reliability and production line to ensure semiconductor device from wafer surface.
Fig. 2 particularly illustrates being fixed the cleaning process after particulate abrasive.As in figure 2 it is shown, in order to avoid scratch is caused in the surface of wafer 21 by the immobilized particles on polishing pad 22 in cleaning process, generally adsorbed wafer 21 by wafer suction nozzle 24 so that the surface of wafer 21 and polishing pad 22 keep certain distance (about 2 centimetres).Then, by conveyer device 23 to the surface transport cleanout fluid 25 of polishing pad 22, thus surface and polishing pad 22 to wafer 21 carry out soaking and washing (rinse).
US Patent No. 6,287,172 provides a kind of cmp method.The method includes adopting tungsten slurry that wafer surface carries out three chemically mechanical polishings.Polish before starting with third time after second time has polished, carry out the soaking and washing of deionized water respectively.
Above cmp method is conducted in-depth research by the present inventor, it has been found that the method is relatively low to the cleaning efficiency of wafer surface.This is owing to wafer and polishing pad keep the surface of certain distance, cleanout fluid and wafer to be gentle contact, cleans dynamics less.
And if clean after still leave more residue in wafer surface, for instance the residual particles of slurry and the product etc. of twice slurry, then these residues are likely to result in following adverse consequences:
1, residue can increase the defect of wafer surface；
2, when the Acidity of Aikalinity of the slurry used by twice polishing is contrary, the slurry comprised in the residue of first time polishing can polish slurry generation chemical reaction used with second time and then affect secondary polishing effect；
Wafer surface can be caused scratch by the granule 3, remaining in wafer surface in follow-up polishing process.
Summary of the invention
The inventors found that above-mentioned prior art exists the problem that the cleaning efficiency to wafer surface is relatively low, and propose a kind of new technical scheme hence for described problem.
It is an object of the present invention to provide a kind of cmp method and chemical-mechanical polisher, it can improve the cleaning efficiency to wafer surface.
According to the first aspect of the invention, it is provided that a kind of cmp method, including: by by cleanout fluid injection to the surface of wafer, the surface of wafer is carried out cleaning showers.
Alternatively, after described cleaning showers, described wafer is carried out chemically mechanical polishing.
Alternatively, before described cleaning showers, adopt the first slurry that described wafer is carried out chemically mechanical polishing.
Alternatively, after above-mentioned cleaning showers, adopt the second slurry that described wafer is carried out chemically mechanical polishing.
Alternatively, the Acidity of Aikalinity of described first slurry and described second slurry is contrary.
Alternatively, the pH value of described first slurry is 10～11.
Alternatively, described first slurry is used for removing oxide.
Alternatively, the pH value of described second slurry is 4～5.
Alternatively, described second slurry is used for removing nitride.
Alternatively, described cleanout fluid is deionized water.
Alternatively, the expulsion pressure of described deionized water is 20～100psi.
Alternatively, the injecting time of described deionized water is 1～200 second.
Alternatively, in described cleaning showers process, described wafer is made to rotate in face around its central shaft, and rotating speed is 10～110rpm.
Alternatively, before described cleaning showers, adopt cleanout fluid that the surface of described wafer is carried out soaking and washing.
According to the second aspect of the invention, it is provided that a kind of chemical-mechanical polisher, including injection apparatus, for cleanout fluid is sprayed the surface to wafer, cleaning showers is carried out with the surface to described wafer.
Alternatively, described injection apparatus is jet strip.
Alternatively, described jet strip is arranged on the side of polishing block, the surface of described wafer is being carried out the surface of cleanout fluid injection to wafer before or after chemically mechanical polishing.
Alternatively, chemical-mechanical polisher also includes at least two polishing block, and described jet strip is arranged between two polishing blocks.
Alternatively, said two polishing block uses the slurry that Acidity of Aikalinity is contrary respectively.
Alternatively, including at least two jet strip, described at least two jet strip intersects each other.
Alternatively, also including the suction nozzle for keeping wafer, described suction nozzle is set to the surface making wafer with described injection apparatus at a distance of 5～15cm.
Alternatively, in the process of described cleaning showers, described suction nozzle is set to drive wafer to make to rotate in face around center wafer axle, and rotating speed is 10～110rpm.
Alternatively, described cleanout fluid is deionized water.
Alternatively, the expulsion pressure of described deionized water is 20～100psi.
Alternatively, the injecting time of described deionized water is 1～200 second.
An advantage of the invention that, owing to the cleanout fluid of injection to wafer surface has bigger energy, adopt the mode of cleaning showers can wash more residual particles, hence it is evident that to improve the cleaning efficiency to wafer.This can bring the advantage that 1, reduce the defect of wafer surface；2, when the Acidity of Aikalinity of the slurry used by twice polishing is contrary, it is to avoid the effect of time polishing after the pulp particle residue impact of previous polishing；3, reduce residue, in follow-up polishing process, wafer surface is caused scratch, thus being effectively improved product fine rate.
By referring to the accompanying drawing detailed description to the exemplary embodiment of the present invention, the further feature of the present invention and advantage thereof will be made apparent from.
Accompanying drawing explanation
The accompanying drawing of the part constituting description describes embodiments of the invention, and is used for together with the description explaining principles of the invention.
With reference to accompanying drawing, according to detailed description below, it is possible to be more clearly understood from the present invention, wherein:
Figure 1A～1C is the schematic diagram illustrating the process that the wafer being formed with nitride and oxide carries out chemically mechanical polishing.
Fig. 2 is the schematic diagram illustrating and the wafer after adopting fixing abrasive lapping technique to carry out chemically mechanical polishing carrying out soaking and washing.
Fig. 3 is the flow chart of the cmp method according to one embodiment of the present invention.
Fig. 4 is the flow chart of the cmp method according to another embodiment of the present invention.
Fig. 5 be the cmp method according to further embodiment of the present invention flow chart.
Fig. 6 is the flow chart of the cmp method according to yet another embodiment of the present invention.
Fig. 7 is the cleaning showers schematic diagram schematically showing the chemical-mechanical polisher according to the present invention.
Fig. 8 is the structural representation of the chemical-mechanical polisher according to one embodiment of the present invention.
Fig. 9 is the structural representation of the chemical-mechanical polisher according to another embodiment of the present invention.
Figure 10 is the structural representation of the chemical-mechanical polisher according to further embodiment of the present invention.
Figure 11 is the structural representation of the chemical-mechanical polisher according to yet another embodiment of the present invention.
Figure 12 is the structural representation of the chemical-mechanical polisher according to yet another embodiment of the present invention.
Detailed description of the invention
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should also be noted that unless specifically stated otherwise, the parts otherwise set forth in these embodiments and positioned opposite, the numerical expression of step and numerical value do not limit the scope of the invention.
Simultaneously, it should be appreciated that for the ease of describing, the size of the various piece shown in accompanying drawing is not draw according to actual proportionate relationship.
Description only actually at least one exemplary embodiment is illustrative below, never as any restriction to the present invention and application or use.
The known technology of person of ordinary skill in the relevant, method and apparatus are likely to be not discussed in detail, but in the appropriate case, described technology, method and apparatus should be considered to authorize a part for description.
Shown here with in all examples discussed, any occurrence should be construed as merely exemplary, not as restriction.Therefore, other example of exemplary embodiment can have different values.
It should also be noted that similar label and letter below figure represent similar terms, therefore, once a certain Xiang Yi accompanying drawing is defined, then it need not be further discussed in accompanying drawing subsequently.
Cmp method
The invention provides a kind of cmp method, including: by cleanout fluid is sprayed the surface to wafer, the surface of described wafer is carried out cleaning showers.
Wherein, cleanout fluid can include but not limited to deionized water, for instance can also be the mixture of abluent and deionized water.
The expulsion pressure of cleanout fluid (such as deionized water) can be 20～100psi, and injecting time can be 1～200 second.
In the process of cleaning showers, wafer rotates in its central shaft holding surface, and rotating speed can be 10～110rpm.
Certainly, it will be understood by those of skill in the art that also dependent on being actually needed change expulsion pressure, injecting time and wafer rotation.
In the above-described embodiments, the cleaning to wafer surface is that the cleanout fluid great efforts of washing away to wafer surface, cleaning efficiency greatly improves by the surface of cleanout fluid injection to wafer.
Injection has bigger energy to the cleanout fluid of wafer surface, it is possible to wash more residual particles.This can bring the advantage that 1, reduce the defect of wafer surface；2, when the Acidity of Aikalinity of the slurry used by twice polishing is contrary, it is to avoid time polishing effect after the pulp particle impact of previous polishing；3, reduce residual particles in follow-up polishing process and wafer surface is caused scratch.Thus, it is effectively improved product fine rate.
As one embodiment of the present of invention, before implementing cleaning showers, it is also possible to adopt cleanout fluid that the surface of wafer is carried out soaking and washing.In this embodiment, on polishing block, wafer and polishing pad are carried out soaking and washing initially with traditional method, so can remove major part residue；Then on the side of polishing block, wafer is carried out cleaning showers, utilize jet cleaning liquid to remove the remaining a small amount of residue of wafer surface, it is possible to meet the requirement that cleaning chip surface standard is higher.
Below with reference to the accompanying drawings 3-6, describes the several embodiments of the cmp method of the present invention.The cleaning showers hereinafter mentioned all can be identical with cleaning showers mentioned above.And it will be appreciated by those skilled in the art that, the cleaning showers hereinafter mentioned all can be combined use as mentioned above with soaking and washing.
Embodiment 1
Fig. 3 is the flow chart of the method carrying out chemically mechanical polishing according to embodiment of the present invention 1.As it is shown on figure 3, the cmp method according to embodiment of the present invention 1 includes:
S301, by cleanout fluid injection to the surface of wafer, carries out cleaning showers to wafer surface.
S302, carries out chemically mechanical polishing to wafer.
Cmp method according to embodiment of the present invention 1, cleaning showers was carried out before carrying out chemically mechanical polishing, can effectively remove the pollutant that wafer brings in various operations before, avoid introducing contaminants into CMP process, and reduce pollutant wafer surface is caused scratch etc..
Embodiment 2
Fig. 4 is the flow chart of the method carrying out chemically mechanical polishing according to embodiment of the present invention 2.As shown in Figure 4, the cmp method according to embodiment of the present invention 2 includes:
S401, carries out chemically mechanical polishing to wafer.
S402, by cleanout fluid injection to the surface of wafer, carries out cleaning showers to the surface of wafer.
Cmp method according to embodiment of the present invention 2, carries out cleaning showers after carrying out chemically mechanical polishing, it is possible to remain in the residue on wafer after effectively removing CMP process, it is to avoid subsequent technique is produced impact by residue.
Embodiment 3
Fig. 5 is the flow chart of the method carrying out chemically mechanical polishing according to embodiment of the present invention 3.As it is shown in figure 5, the cmp method according to embodiment of the present invention 3 includes:
S501, carries out first time chemically mechanical polishing to wafer.
S502, by cleanout fluid injection to the surface of wafer, carries out cleaning showers to the surface of wafer.
S503, carries out second time chemically mechanical polishing to wafer.
The chemical property of second time slurry used by chemically mechanical polishing and the first time slurry used by chemically mechanical polishing, for instance Acidity of Aikalinity, it is possible to identical.Now, for instance, first time chemically mechanical polishing may be used for removing the identical material of deposition on wafer with second time chemically mechanical polishing.First time carries out rough polishing, and second time carries out finer polishing.
Slurry used by chemically mechanical polishing can also be contrary with the chemical property of the slurry used by first time chemically mechanical polishing for the second time, for instance Acidity of Aikalinity is contrary.Now, for instance first time chemically mechanical polishing and second time chemically mechanical polishing may be used for removing the different materials of successively deposition on wafer, for instance, the nitride that pseudo-grid structure is sequentially depositing and oxide.
Cmp method according to embodiment of the present invention 3, cleaning showers is carried out between twice chemically mechanical polishing, the residue that can remain on wafer after effectively removing previous CMP process, can not only avoid residue, in second time chemically mechanical polishing, wafer surface is caused cut, and in the incompatible situation of slurry chemical that twice chemically mechanical polishing uses, it can be avoided that the slurry comprised in this residue and the slurry generation chemical reaction in second time chemically mechanical polishing and then the polishing effect affecting second time chemically mechanical polishing.
Embodiment 4
Fig. 6 is the flow chart of the method carrying out chemically mechanical polishing according to embodiment of the present invention 4.Below with reference to Fig. 6, the detailed description cmp method according to embodiment of the present invention 4.
S601, carries out first time cleaning showers in advance to wafer.
For being about to carry out the wafer of chemically mechanical polishing, by by cleanout fluid, for instance deionized water, spray the surface to wafer, wafer surface is carried out cleaning showers.Pass through cleaning showers, it is possible to effectively remove the pollutant that wafer brings in various operations before, it is to avoid in CMP process, introduce pollutant, reduce pollutant and wafer surface is caused scratch.
S602, adopts the first slurry that wafer is carried out the roughing of chemically mechanical polishing.
Such as, in order to remove the silicon oxide layer on nitride layer, initially with the first slurry, wafer is carried out the roughing of chemically mechanical polishing.The first slurry adopted in this step can be traditional alkaline slurry, and pH value can be such as 10～11.
S603, carries out second time cleaning showers to wafer.
By by cleanout fluid, for instance deionized water, spray to wafer surface, it is possible to remove the residue containing the first alkaline slurry in wafer surface.
S604, adopts fixing abrasive material that wafer carries out the fining-off of chemically mechanical polishing.
Remove in the process of silicon oxide layer, in order to avoid forming butterfly defect, after the roughing of step S602, adopt the fixing abrasive material being located on polishing pad that wafer is carried out chemically mechanical polishing further so that the polishing of wafer is more uniformly distributed.In this step, the slurry used still can be alkaline slurry, and pH value can be such as 10～11, and this slurry can be identical with aforementioned first slurry.
S605, carries out third time cleaning showers to wafer.
By by cleanout fluid, for instance deionized water, spray to wafer surface, it is possible to remove the residue of wafer surface.So can not only avoid residue that wafer surface causes cut in further CMP process, and it can be avoided that the effect of the slurry generation chemical reaction adopted in the slurry comprised in residue and subsequent chemical-mechanical polishing technique and then impact second time chemically mechanical polishing.
S606, adopts the second slurry that wafer is carried out chemically mechanical polishing.
In this step, for removing the silicon nitride being such as deposited on pseudo-grid, the second slurry can be traditional Acid Slurry, and its pH value can be 4～5.
S607, carries out the 4th cleaning showers to wafer.
By by cleanout fluid, for instance deionized water, spray to wafer surface, it is possible to remain in the residue on wafer after effectively removing CMP process, it is to avoid subsequent technique is produced impact by residue.
In this embodiment, carried out altogether three chemically mechanical polishings, and carried out amounting to four cleaning showers before and after polishing every time.
It will be understood by those skilled in the art that and as required, one or many cleaning showers therein can be saved, it is also possible to wherein will replace with soaking and washing by one or many cleaning showers, it is also possible to before or after cleaning showers, carry out soaking and washing.
Chemical-mechanical polisher
Correspondingly, the invention provides a kind of chemical-mechanical polisher, including: injection apparatus, for cleanout fluid is sprayed the surface to wafer, carry out cleaning showers with the surface to described wafer.
Fig. 7 schematically shows the cleaning showers schematic diagram of the chemical-mechanical polisher according to the present invention.
As it is shown in fig. 7, the Chemical mechanical equipment according to the present invention has injection apparatus 76 and wafer suction nozzle 74.Injection apparatus 76 is provided with several jets 78.
Wherein, cleanout fluid sprays the surface to wafer 71 by the jet 78 on injection apparatus 76, thus the surface of wafer 71 is carried out cleaning showers, to remove the residue 72 of wafer surface.
In cleaning showers process, wafer suction nozzle 74 could be arranged to the surface making wafer 71 with injection apparatus at a distance of 5～15cm, and wafer suction nozzle 74 could be arranged to make wafer 71 carry out rotating in face around central shaft with the speed of 10～110rpm.
Cleanout fluid used can be deionized water, and the expulsion pressure of deionized water can be 20～100psi, and the injecting time of deionized water can be 1～200 second.Certainly, it will be understood by those of skill in the art that and can also change expulsion pressure, injecting time and rotating speed according to actual needs, or select other kinds of cleanout fluid, to reach better cleaning performance.
In the chemical-mechanical polisher according to embodiment of the present invention 5, by the cleaning to wafer surface to the surface of wafer by cleanout fluid injection, the cleanout fluid great efforts of washing away to wafer surface, cleaning efficiency greatly improves.
Injection has bigger energy to the cleanout fluid of wafer surface, it is possible to wash more residual particles.This can bring the advantage that 1, reduce the defect of wafer surface；2, when the Acidity of Aikalinity of the slurry used by twice polishing is contrary, it is to avoid time polishing effect after the pulp particle impact of previous polishing；3, reduce residual particles in follow-up polishing process and wafer surface is caused scratch.Thus, it is effectively improved product fine rate.
Injection apparatus can provide with the form of jet strip, it is also possible to provides with other suitable form any.
Exemplarily, it is possible on polishing block side, jet strip is set as injection apparatus.
Below with reference to the accompanying drawings 8-12, for jet strip, describes the injection apparatus several set-up modes on chemical-mechanical polisher.
Hereinafter, it is described for the technological process that on three polishing blocks, wafer is carried out three chemically mechanical polishings altogether.It will be appreciated by those skilled in the art that, be not limited to three according to the polishing block quantity that the chemical-mechanical polisher of the present invention has.
When the cleannes on the chemically mechanical polishing carried out on some polishing block surface of wafer to being sent on this polishing block own require higher, it is possible to the position before being sent to by wafer on this polishing block arranges injection apparatus.
When needing the cleaning of higher efficiency after carrying out chemically mechanical polishing on some polishing block, it is possible to the position after wafer is communicated off this polishing block arranges injection apparatus.
Injection apparatus can also be set between two polishing blocks, with the impact on rear stock removal polishing of the residue after eliminating front stock removal polishing.
It addition, on each polishing block, before or after carrying out chemically mechanical polishing, it is also possible to carry out soaking and washing.
Embodiment 5
Fig. 8 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 5.As shown in Figure 8, the chemical-mechanical polisher according to embodiment of the present invention 5 includes: jet strip 85, articles holding table 84 and three polishing blocks.
Jet strip 85 is positioned at the side of the first polishing block 81.When wafer is moved on to the first polishing block 81 from articles holding table 84, it is possible to jet strip 85 is arranged between the first polishing block 81 and articles holding table 84.
Before wafer is carried out chemically mechanical polishing, the surface of wafer is first carried out cleaning showers by jet strip 85.
Suction nozzle can be configured so that the surface making wafer and jet strip 85 are at a distance of 5～15cm, and injecting time can be 1～200 second, and the expulsion pressure of deionized water can be 20～100psi.In the process of above-mentioned cleaning showers, wafer can rotate in its central shaft holding surface, and rotating speed can be 10～110rpm.After cleaning showers completes, wafer can carry out chemically mechanical polishing at first polishing block the 81, second polishing block 82 and the 3rd polishing block 83 successively.
Adopt the chemical-mechanical polisher of embodiment of the present invention 5, for being about to carry out the wafer of chemically mechanical polishing, by the surface by cleanout fluid injection to wafer, first wafer surface is carried out cleaning showers in advance, can effectively remove the pollutant that wafer brings in various operations before, avoid introducing contaminants into CMP process, and reduce pollutant, in polishing process, wafer surface is caused scratch.
Embodiment 6
Fig. 9 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 6.As it is shown in figure 9, the Chemical mechanical equipment according to embodiment of the present invention 6 includes: jet strip 86, articles holding table 84 and three polishing blocks.
Wherein, jet strip 86 is located between the 3rd polishing block 83 and articles holding table 84.Suction nozzle drives wafer successively after first polishing block the 81, second polishing block 82 and the 3rd polishing block 83 carry out chemically mechanical polishing, and the top that wafer moves to jet strip 86 carries out cleaning showers.
Adopt the chemical-mechanical polisher of embodiment of the present invention 6, for the wafer through three chemically mechanical polishings, by cleanout fluid is sprayed the surface to wafer, wafer surface is carried out cleaning showers, it is possible to after effectively removing CMP process, remain in the residue on wafer.
Embodiment 7
Figure 10 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 7.As shown in Figure 10, the Chemical mechanical equipment according to embodiment of the present invention 7 includes: jet strip 86, articles holding table 84 and three polishing blocks.
Wherein, jet strip 86 is located between the first polishing block 81 and the second polishing block 82, and wafer carries out cleaning showers in the mobile top to jet strip 86 after completing first time chemically mechanical polishing.Then, suction nozzle wafer is driven to carry out chemically mechanical polishing on the second polishing block the 82, the 3rd polishing block 83 successively.In course of injection, suction nozzle can drive wafer to rotate in center wafer axle holding surface, and rotating speed can be 10～110rpm.Suction nozzle could be arranged to the surface making wafer with jet strip 85 at a distance of 5～15cm, and injecting time can be 1～200 second, and the expulsion pressure of deionized water can be 20～100psi.
Adopt the chemical-mechanical polisher of embodiment of the present invention 7, cleaning showers is carried out after first time chemically mechanical polishing, can effectively remove the residue remaining on wafer after first time chemically mechanical polishing, it is possible to be prevented effectively from residue, in subsequent chemical-mechanical polishing, wafer surface caused cut.
Embodiment 8
Figure 11 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 8.As shown in figure 11, the Chemical mechanical equipment according to embodiment of the present invention 8, including: jet strip 85, articles holding table 84 and three polishing blocks.
Wherein, jet strip 85 is located between the second polishing block 82 and the 3rd polishing block 83.Suction nozzle drives wafer successively after first polishing block the 81, second polishing block 82 carries out chemically mechanical polishing, and the top moved by wafer to jet strip 85 carries out cleaning showers.Afterwards, wafer is moved to the 3rd polishing block 83 and carry out chemically mechanical polishing.In course of injection, suction nozzle can drive wafer to rotate in center wafer axle holding surface, and rotating speed can be 10～110rpm.Suction nozzle could be arranged to the surface making wafer with jet strip 85 at a distance of 5～15cm, and injecting time can be 1～200 second, and the expulsion pressure of deionized water can be 20～100psi.
When the nitride being sequentially depositing on pseudo-grid and oxide are carried out chemically mechanical polishing, often the first polishing block 81 and the second polishing block 82 are for being polished oxide, and the 3rd polishing block 83 is for being polished nitride.
Polishing process to oxide and the polishing process to nitride can adopt the slurry that chemical property is contrary.Such as to the slurry that can adopt alkalescence in the polishing process of oxide, and to the polishing process of nitride can adopt the slurry of acidity.
Adopt the chemical-mechanical polisher of embodiment of the present invention 8, cleaning showers is carried out after second time chemically mechanical polishing, can effectively remove the residue remaining on wafer after second time chemically mechanical polishing, this can not only be avoided residue that wafer surface causes cut in subsequent chemical-mechanical polishing, and avoids the effect of slurry generation chemical reaction and then the impact second time chemically mechanical polishing adopted in the slurry comprised in this residue and subsequent chemical-mechanical polishing.
Embodiment 9
Figure 12 is the structural representation of the chemical-mechanical polisher of embodiment of the present invention 9.As shown in figure 12, the Chemical mechanical equipment according to embodiment of the present invention 9, including: first jet strip the 95, second jet strip 96, articles holding table 84 and three polishing blocks.
Wherein, the first jet strip 95 is perpendicular to one another with the second jet strip 96 to intersect, and articles holding table 84 and three polishing blocks is separated.Wafer is adsorbed movement to first polishing block the 81, second polishing block the 82, the 3rd polishing block 83 successively by suction nozzle and carries out chemically mechanical polishing, and stands cleaning showers above two jet strip.Detailed process is as follows.
Suction nozzle drives the wafer being positioned on articles holding table 84, with such as through the normal of the first jet strip 95 and the intersection point of the second jet strip 96 for axle, rotate 45 ° counterclockwise, arrive between articles holding table 84 and the first polishing block 81 and be positioned at the top of the first jet strip 95, first jet strip 95 is by cleanout fluid, such as deionized water, injection is to wafer surface, thus wafer surface is carried out.Pass through cleaning showers, it is possible to effectively remove the pollutant that wafer brings in various operations before, it is to avoid in CMP process, introduce pollutant, reduce pollutant and wafer surface is caused scratch.
After first time cleaning showers completes, suction nozzle drives wafer to continue to rotate 45 ° counterclockwise, arrives the first polishing block 81.Wafer carries out the roughing of chemically mechanical polishing at the first polishing block 81.In order to remove the oxide on nitride layer, for instance removing the silicon oxide on silicon nitride layer, the slurry used by the first polishing block 81 is alkaline matter, and pH value can be 10～11.
After first time chemically mechanical polishing completes, suction nozzle drives wafer to continue to rotate 45 ° counterclockwise, arrives between the first polishing block 81 and the second polishing block 82 and be positioned at the top of the second jet strip 96.Second jet strip 96 is to wafer surface jet cleaning liquid, for instance deionized water, in order to wafer surface is carried out cleaning showers.So can effectively remove the residue that wafer surface contains alkaline slurry.
After second time has been cleaned, suction nozzle drives wafer to continue to rotate 45 ° counterclockwise, arrives the second polishing block 82 and carries out the fining-off of chemically mechanical polishing.In order to avoid in the first interlayer media milling process owing to grinding uneven formed butterfly defect, the second polishing block 82 adopts fixing abrasive lapping technique, is fixed on polishing pad by abrasive material.Slurry used by second polishing block 82 still can be alkaline slurry, and pH value can be such as 10～11, and this slurry can be identical with the slurry used by the first polishing block 81.
After second time chemically mechanical polishing completes, suction nozzle absorption wafer continues to rotate 45 ° counterclockwise, arrives between the second polishing block 82 and the 3rd polishing block 83 and be positioned at the top of the first jet strip 95.First jet strip 95 is by cleanout fluid, for instance deionized water, and injection is to wafer surface, to carry out cleaning showers.So can not only avoid residue that wafer surface causes cut in further CMP process, and it can be avoided that the effect of the slurry generation chemical reaction adopted in the slurry comprised in residue and subsequent chemical-mechanical polishing technique and then impact second time chemically mechanical polishing.
After third time cleaning showers completes, suction nozzle absorption wafer continues to rotate 45 ° counterclockwise, arrives the 3rd polishing block 83 and carries out chemically mechanical polishing.In order to remove the nitride on pseudo-grid, for instance silicon nitride, the slurry used by the 3rd polishing block 83 is acid, and its pH value can be 4～5.
After third time chemically mechanical polishing completes, suction nozzle absorption wafer continues to rotate 45 ° counterclockwise, arrives between the 3rd polishing block 83 and articles holding table 84 and be positioned at the top of the second jet strip 96.Second jet strip 96 just cleanout fluid, for instance deionized water, sprays to wafer surface.The residue that can remain on wafer after effectively removing CMP process, it is to avoid subsequent technique is produced impact by residue.
In above-mentioned cleaning showers process, wafer suction nozzle could be arranged to make wafer surface and injection apparatus at a distance of 5～15cm, and drives wafer to carry out rotating in face around central shaft with the speed of 10～110rpm.Cleanout fluid used can be deionized water, and the expulsion pressure of deionized water can be 20～100psi, and the injecting time of deionized water can be 1～200 second.
It should be noted that injecting time, expulsion pressure can be adjusted according to actual needs.Such as, in first time cleaning showers, it is possible to shorten injecting time or omit first time cleaning showers；And in third time cleaning showers, proper extension injecting time, increase expulsion pressure, thus the pulp particle formed in second time chemically mechanical polishing thoroughly being removed.The unlimited number of polishing block is in shown in figure, it is possible to arrange one, two or more polishing block.Position and the layout of multiple polishing blocks and articles holding table are not limited to the matrix pattern shown in figure, it is also possible to be the layout of such as triangle, hexagon or other shapes.Multiple jet strip can intersect and angled or be arranged in parallel.
So far, the method that manufacture semiconductor device according to the present invention and the semiconductor device that formed are described in detail.In order to avoid covering the design of the present invention, it does not have describe details more known in the field.Those skilled in the art are as described above, complete it can be appreciated how implement technical scheme disclosed herein.
Although some specific embodiments of the present invention being described in detail already by example, but it should be appreciated by those skilled in the art, above example is merely to illustrate, rather than in order to limit the scope of the present invention.It should be appreciated by those skilled in the art, can without departing from the scope and spirit of the present invention, above example be modified.The scope of the present invention be defined by the appended claims.
Claims (16)
1. a cmp method, including:
Adopt the first slurry that wafer is carried out chemically mechanical polishing；
By cleanout fluid is sprayed the surface to wafer, the surface of wafer is carried out cleaning showers；
After described cleaning showers, adopt the second slurry that described wafer is carried out chemically mechanical polishing；
The Acidity of Aikalinity of wherein said first slurry and described second slurry is contrary, and twice chemically mechanical polishing is for removing the different materials of successively deposition on wafer；
Wherein, the expulsion pressure of described cleanout fluid is 20～100psi.
2. cmp method as claimed in claim 1, the pH value of wherein said first slurry is 10～11.
3. cmp method as claimed in claim 2, wherein said first slurry is used for removing oxide.
4. cmp method as claimed in claim 1, the pH value of wherein said second slurry is 4～5.
5. cmp method as claimed in claim 4, wherein said second slurry is used for removing nitride.
6. cmp method as claimed in claim 1, wherein said cleanout fluid is deionized water.
7. cmp method as claimed in claim 6, the injecting time of wherein said deionized water is 1～200 second.
8. cmp method as claimed in claim 6, wherein in described cleaning showers process, described wafer is made to rotate in face around its central shaft, and rotating speed is 10～110rpm.
9. cmp method as claimed in claim 1, also includes:
Before described cleaning showers, adopt cleanout fluid that the surface of described wafer is carried out soaking and washing.
10. a chemical-mechanical polisher, including:
First polishing block, is used for adopting slurry that wafer is carried out chemically mechanical polishing；
Injection apparatus, is arranged between the first polishing block and the second polishing block, for cleanout fluid being sprayed the surface to wafer after wafer is carried out chemically mechanical polishing by the first polishing block, carries out cleaning showers with the surface to described wafer；
Second polishing block, for adopting slurry that wafer is carried out chemically mechanical polishing after wafer is carried out cleaning showers by injection apparatus；
Wherein said first polishing block and described second polishing block use the slurry that Acidity of Aikalinity is contrary to remove the different materials of successively deposition on wafer respectively；
Wherein, the expulsion pressure of described cleanout fluid is 20～100psi.
11. chemical-mechanical polisher as claimed in claim 10, wherein said injection apparatus is jet strip.
12. chemical-mechanical polisher as claimed in claim 11, including at least two jet strip, described at least two jet strip intersects each other.
13. chemical-mechanical polisher as claimed in claim 10, also including the suction nozzle for keeping wafer, described suction nozzle is set to the surface making wafer with described injection apparatus at a distance of 5～15cm.
14. chemical-mechanical polisher as claimed in claim 13, in the process of described cleaning showers, described suction nozzle is set to drive wafer to make to rotate in face around center wafer axle, and rotating speed is 10～110rpm.
15. chemical-mechanical polisher as claimed in claim 10, wherein said cleanout fluid is deionized water.
16. chemical-mechanical polisher as claimed in claim 15, the injecting time of wherein said deionized water is 1～200 second.
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| CN105632999A (en) * | 2014-10-30 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Method for planarizing shallow trench isolation structure |
| CN106935480B (en) * | 2015-12-29 | 2020-02-11 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method implemented after chemical mechanical polishing of copper metal interconnection layer |
| CN105619239A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Scratching-preventing chemical mechanical grinding device and chemical mechanical grinding method thereof |
| CN110517951B (en) * | 2019-08-29 | 2022-11-29 | 上海华力集成电路制造有限公司 | Cleaning method for improving micro-scratch of wafer before STI (shallow trench isolation) grinding |
| CN112820629A (en) * | 2020-12-31 | 2021-05-18 | 上海新昇半导体科技有限公司 | Wafer grinding method |
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