CN103128649A - Chemical machinery polishing method capable of reducing residual slurry - Google Patents
Chemical machinery polishing method capable of reducing residual slurry Download PDFInfo
- Publication number
- CN103128649A CN103128649A CN2011104024745A CN201110402474A CN103128649A CN 103128649 A CN103128649 A CN 103128649A CN 2011104024745 A CN2011104024745 A CN 2011104024745A CN 201110402474 A CN201110402474 A CN 201110402474A CN 103128649 A CN103128649 A CN 103128649A
- Authority
- CN
- China
- Prior art keywords
- slurry
- wafer
- grinding
- cmp method
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/12—Devices for exhausting mist of oil or coolant; Devices for collecting or recovering materials resulting from grinding or polishing, e.g. of precious metals, precious stones, diamonds or the like
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a semiconductor manufacturing process, in particular to a method capable of effectively reducing residual abradant introduced in the process of chemical machinery polish. The chemical machinery polishing method comprises the following steps of grinding and washing, wherein the surface of a wafer is grinned with slurry, the surface of the wafer is washed with fluid to remove residual slurry on the surface, and the slurry is delivered to the surface of the wafer in the washing step.
Description
Technical field
The present invention relates to semiconductor fabrication process, relate in particular to and effectively to reduce the residual method of grinding agent of introducing in CMP process.
Background technology
In the wafer manufacture process, need to carry out polishing to its surface in order to obtain smooth surface.Chemically mechanical polishing is a kind of glossing commonly used, and it utilizes grinding agent (generally comprising silicon or the alumina particle of disperse in chemical solvent) to remove the uneven of crystal column surface.When polishing, wafer is arranged on the abrasive disk of polishing machine, and grinding agent is transported to crystal column surface, and grinding head utilizes grinding agent to come grinding crystal wafer surperficial, to obtain smooth surface.After finish grinding, utilize fluid (such as deionized water) to wash away crystal column surface so that residual slurry etc. is got rid of.
But the effect of washing away is unsafty often, and this causes crystal column surface that more residual slurry is arranged, thereby affects the yield of product.To this, usually adopt measures such as changing consumptive material or periodic cleaning polishing machine, but these modes waste time and energy, and have also increased manufacturing cost.Another kind method is by the chemicals flow of adjusting cleaning machine, reduces the means such as gap between cleaning brush and crystal column surface, can reduce its service life but often adjust flowmeter, and reduces the effect in cleaning brush gap and not obvious.
Summary of the invention
The present invention is intended to solve above-mentioned shortcoming, and a kind of cmp method that can reduce remaining grinding agent is provided, and it has advantages of, and realization is convenient, implementation cost is low.
Above-mentioned purpose of the present invention realizes by following technical proposal:
A kind of cmp method that can reduce remaining slurry comprises the following steps:
Grinding steps utilizes slurry to come the surface of grinding crystal wafer; And
Rinsing step utilizes the surface of the described wafer of fluid flushing to remain in the slurry on described surface with removal, wherein, in described rinsing step also to the described slurry of the surface transport of described wafer.
Preferably, in above-mentioned cmp method, described fluid is deionized water, and the pH value of described slurry is between 10-11.
Preferably, in above-mentioned cmp method, in described rinsing step, described slurry is to make the pH value on surface of described wafer between 8-9 to the rate setting of the surface transport of described wafer.
Preferably, in above-mentioned cmp method, described grinding steps comprises:
Described grinding mechanism grinds the middle section on the surface of described wafer; And
Described grinding mechanism grinds the fringe region on the surface of described wafer.
Preferably, in above-mentioned cmp method, the described rinsing step duration was 6 seconds.
From following detailed description by reference to the accompanying drawings, will make above and other objects of the present invention and advantage more fully clear.
Description of drawings
Fig. 1 shows a kind of typical schematic diagram that is used for the polissoir of CMP process.
Fig. 2 is the schematic diagram according to the cmp method of preferred embodiment of the present invention.
Fig. 3 is the cmp method that utilizes respectively prior art and the effect comparison figure that processes wafer according to the cmp method of preferred embodiment of the present invention.
The specific embodiment
Below by being described with reference to the drawings, the specific embodiment of the present invention sets forth the present invention.But it will be appreciated that, these specific embodiment are only exemplary, there is no restriction for spirit of the present invention and protection domain.
In this manual, " comprise " and the term of " comprising " and so on represent except have have in specification and claims directly and the unit and step of clearly statement, technical scheme of the present invention is not got rid of yet and is had not by directly or other unit of clearly explaining and the situation of step.Moreover term " wafer " is commonly referred to as circular single crystal semiconductor substrate here, is formed with integrated circuit on it.
Fig. 1 shows a kind of typical schematic diagram that is used for the polissoir 10 of CMP process.This equipment 10 comprises the abrasive disk 130 of grinding head 110, grinding pad 120 and the supporting grinding pad 120 of carrying wafer 20 (it comprises substrate 20A, be formed at semiconductor devices 20B on substrate and the silica protective layer 20C of covering device).Grinding head 110 comprise the retainer ring 110A that holds wafer 20 and be arranged on wafer 20 and the retainer ring inwall between barrier film 110B.
Polissoir 10 comprises the controller (not shown) usually; under the control of this controller; suitable pressure is applied to by barrier film 110B on the back side of wafer 20 (being also the surface of substrate 20A); speed that grinding head 110 and abrasive disk 130 can change is rotation independently respectively, and slurry 30 and/or other material are transported to the surface (being the surface of silica protective layer 20C) of wafer 20 according to certain flow.
At the equipment run duration, form required grinding pressure by barrier film 110B at the back side of wafer 20.Meanwhile, grinding head 110 rotates with default speed around rotating shaft 140, and abrasive disk 130 rotates with default speed around rotating shaft 150.Type according to being polished the surface can comprise silicon oxide particle or alumina particle in slurry 30, and pH value is reasonable is between 10-11 and average grain diameter is the 20-200 nanometer.Under the acting in conjunction of the chemistry of the rotation separately of downforce, grinding head 110 and abrasive disk 130 that barrier film 110B applies and slurry 30 and mechanical effect, the silica protective layer of wafer 20 is ground to required flatness and thickness.
After completing grinding; grinding head 110 and abrasive disk 130 still are in rotation status (but rotating speed can be different from when grinding), and the wiper mechanism (not shown) remains in the slurry on surface to the jet surface deionized water of silica protective layer 20C with removal.Wafer 20 retainer ring 110A from grinding head 110 after completing cleaning takes out, and wiper mechanism can spray deionized waters with the clear slurry that remains on abrasive disk to abrasive disk 130 subsequently.
Fig. 2 is the schematic diagram according to the cmp method of preferred embodiment of the present invention.For setting forth conveniently, here take polissoir shown in Figure 1 10 as example.But it is pointed out that method of the present invention also is suitable for the polissoir of other structures.
The present inventor finds through after furtheing investigate, if add slurry when cleaning wafer 20, not only can not increase the residual slurry amount of crystal column surface, can also obviously reduce residual quantity on the contrary.This is because when cleaning wafer, the slurry that adds has played the effect (even also the pH value of crystal column surface is more near pH value of slurry) of buffering pH value, thereby make the electromotive force between wafer 20 and grinding pad 120 approach or equate, this causes crystal column surface and slurry formation like charges.Due to the effect of repelling each other, residual slurry will more easily break away from crystal column surface.Based on above-mentioned discovery, in the present embodiment, except spraying to crystal column surface the fluid of deionized water and so on, also carry slurry to crystal column surface simultaneously during cleaning.
As shown in Figure 2, at first in step 210, wafer 20 is loaded into the retainer ring 110A of grinding head 110.
Then enter step 220, begin this moment to carry slurry 30 to the silica protective layer of wafer 20.
Subsequently in step 230, the barrier film 110B by grinding head 110 applies downforce to wafer 20, makes grinding pad 120 grind by the middle section on the surface of 30 couples of silica protective layer 20C of slurry.The time that this process of lapping continues decides according to flatness and the thickness of the required wafer that reaches.
Enter step 240 after the grinding that finishes middle section in, begin the fringe region on silica protective layer 20C surface is ground, so that fringe region has identical or close flatness and thickness with middle section.
Then enter step 250, begin to enter cleaning process.At this moment, the wiper mechanism (not shown) is to silica protective layer 20C jet surface high-pressure fluid (for example plasma water).As mentioned above, unlike the prior art, in the present embodiment, slurry 30 still is sent to silica protective layer 20C surface.This moment, wafer 20 and abrasive disk 130 all were in rotation status; therefore deionized water and slurry 30 can both enter silica protective layer 20C surface; make the pH value on silica protective layer 20C surface relatively close to the pH value of slurry 30, therefore be conducive to the removal of remaining slurry.In a concrete example of using; the pH value of slurry is between 10-11, and flush fluid is deionized water, and when therefore cleaning, the pH value of silica protective layer 20C near surface is between 8-9; and when only adopting deionized water, the pH value of silica protective layer 20C near surface is 7 left and right.
In step 260, wafer 20 is taken off from retainer ring 110A subsequently, grinding pad etc. is cleaned.At this moment, stop carrying slurry, only adopt flush fluid to wash away.
Fig. 3 is the cmp method that utilizes respectively prior art and the effect comparison figure that processes wafer according to the cmp method of preferred embodiment of the present invention, wherein that the figure correspondence of the first half is the baseline defect figure that utilizes the wafer that the cmp method of prior art processes, and that the figure correspondence of the latter half is the baseline defect figure that utilizes the wafer of processing according to the cmp method of preferred embodiment of the present invention.
In Fig. 3, wafer is divided into a plurality of small pieces, is wherein defective small pieces with density bullet.As seen from the figure, in the wafer after the cmp method that utilizes preferred embodiment of the present invention is processed, the quantity of defectiveness small pieces obviously reduces.
Following table is depicted as an exemplary polissoir technological process setup menu.as this table finding, this flow process comprises rotating speed slowly increases (Ramp up), middle section grinds (Main polish), fringe region grinds (Edge polish), wafer cleaning (Rinse1) and grinding pad clean steps (step1-step5) such as (Rinse2), for each step, can set in advance rotating speed (Head RPM) and the acceleration (Head Accel) of grinding head, the rotating speed of abrasive disk (Platen RPM) and acceleration (Platen Accel), the scan pattern of the grinding head (Type under Head Sweep hurdle, Zone and speed), selecting of cleaning model (Rinse), the flow of slurry (Deliv1 (ml/min)), the parameters such as perdurabgility (By time/Endpoint) of the flow of flush fluid (Deliv2 (ml/min)) and each step.When above-described embodiment is applied to above-mentioned polissoir, need not to change the structure of equipment, only need the technological process setup menu is made the slurry residual volume that a small amount of modification can significantly reduce crystal column surface, this is outstanding advantage of the present invention.
What should be understood that is: above-described embodiment is just to explanation of the present invention, rather than limitation of the present invention, within any innovation and creation that do not exceed in connotation scope of the present invention all fall into protection domain of the present invention.
Claims (5)
1. the cmp method that can reduce remaining slurry, comprise the following steps:
Grinding steps utilizes slurry to come the surface of grinding crystal wafer; And
Rinsing step utilizes the surface of the described wafer of fluid flushing to remain in the slurry on described surface with removal,
Wherein, in described rinsing step also to the described slurry of the surface transport of described wafer.
2. cmp method as claimed in claim 1, wherein, described fluid is deionized water, the pH value of described slurry is between 10-11.
3. cmp method as claimed in claim 2, wherein, in described rinsing step, described slurry is to make the pH value on surface of described wafer between 8-9 to the rate setting of the surface transport of described wafer.
4. cmp method as claimed in claim 1, wherein, described grinding steps comprises:
Grind the middle section on the surface of described wafer; And
Grind the fringe region on the surface of described wafer.
5. cmp method as claimed in claim 1, wherein, the described rinsing step duration was 6 seconds.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110402474.5A CN103128649B (en) | 2011-11-28 | 2011-11-28 | The cmp method of leftover slurry can be reduced |
| PCT/CN2012/084033 WO2013078934A1 (en) | 2011-11-28 | 2012-11-02 | Chemical mechanical polishing method for reducing residual slurry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110402474.5A CN103128649B (en) | 2011-11-28 | 2011-11-28 | The cmp method of leftover slurry can be reduced |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103128649A true CN103128649A (en) | 2013-06-05 |
| CN103128649B CN103128649B (en) | 2016-08-03 |
Family
ID=48489433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110402474.5A Active CN103128649B (en) | 2011-11-28 | 2011-11-28 | The cmp method of leftover slurry can be reduced |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103128649B (en) |
| WO (1) | WO2013078934A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104802068A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN107398780A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of twin polishing method of wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0967049A1 (en) * | 1998-06-25 | 1999-12-29 | Speedfam Co., Ltd. | Polishing apparatus |
| US20010055937A1 (en) * | 1998-09-01 | 2001-12-27 | Yutaka Wada | Cleaning method and polishing apparatus employing such cleaning method |
| CN1618569A (en) * | 2003-11-17 | 2005-05-25 | 台湾积体电路制造股份有限公司 | Cmp process and process for polishing copper layer oxide on base |
| CN1815696A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Chemical-mechanical grinding method |
| CN102814725A (en) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | Chemical mechanical polishing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6036785A (en) * | 1997-05-02 | 2000-03-14 | Ferrell; Gary W. | Method for removing chemical residues from a surface |
-
2011
- 2011-11-28 CN CN201110402474.5A patent/CN103128649B/en active Active
-
2012
- 2012-11-02 WO PCT/CN2012/084033 patent/WO2013078934A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0967049A1 (en) * | 1998-06-25 | 1999-12-29 | Speedfam Co., Ltd. | Polishing apparatus |
| US20010055937A1 (en) * | 1998-09-01 | 2001-12-27 | Yutaka Wada | Cleaning method and polishing apparatus employing such cleaning method |
| CN1618569A (en) * | 2003-11-17 | 2005-05-25 | 台湾积体电路制造股份有限公司 | Cmp process and process for polishing copper layer oxide on base |
| CN1815696A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Chemical-mechanical grinding method |
| CN102814725A (en) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | Chemical mechanical polishing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104802068A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN104802068B (en) * | 2014-01-24 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN107398780A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of twin polishing method of wafer |
| CN107398780B (en) * | 2016-05-18 | 2020-03-31 | 上海新昇半导体科技有限公司 | Double-side polishing method for wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013078934A1 (en) | 2013-06-06 |
| CN103128649B (en) | 2016-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9630295B2 (en) | Mechanisms for removing debris from polishing pad | |
| TWI620240B (en) | Methods and apparatus for post-chemical mechanical planarization substrate cleaning | |
| US9475170B2 (en) | Device for cleaning fixed abrasives polishing pad | |
| US9138861B2 (en) | CMP pad cleaning apparatus | |
| KR20190052138A (en) | Edge polishing apparatus and method of wafer | |
| JP5671510B2 (en) | Semiconductor device substrate grinding method | |
| KR19990045185A (en) | Polishing device and polishing method | |
| JPWO2003071592A1 (en) | Polishing method and apparatus | |
| JP2005271111A (en) | Substrate polishing device and substrate polishing method | |
| TW201742135A (en) | Method for a double side polishing of a semiconductor wafer | |
| CN102398212A (en) | Chemical mechanical polishing equipment | |
| CN105364699B (en) | Chemical mechanical polishing method and chemical mechanical polishing equipment | |
| CN103035504B (en) | Cmp method and chemical-mechanical polisher | |
| CN102814725B (en) | A kind of chemical and mechanical grinding method | |
| CN103878680A (en) | Method for reducing wafer scratch, chemical machine grinding machine platform and cleaner | |
| KR20220009885A (en) | Dressing apparatus and polishing apparatus | |
| CN103128649A (en) | Chemical machinery polishing method capable of reducing residual slurry | |
| CN105312268A (en) | Wafer cleaning device | |
| JP2008028232A (en) | Apparatus and method for polishing semiconductor substrate, and semiconductor device manufacturing method | |
| CN102009383A (en) | Chemical machinery grinding equipment and grinding method | |
| JP2010021273A (en) | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus | |
| CN103144011B (en) | A kind of method and burnishing device of controlling silicon wafer polishing surface microroughness | |
| KR20220073192A (en) | Apparatus of cleaning a polishing pad and polishing device | |
| CN102528653B (en) | Fixed type particle grinding device and grinding method thereof | |
| CN112775757A (en) | Semiconductor machine and grinding method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |