CN103128649B - The cmp method of leftover slurry can be reduced - Google Patents
The cmp method of leftover slurry can be reduced Download PDFInfo
- Publication number
- CN103128649B CN103128649B CN201110402474.5A CN201110402474A CN103128649B CN 103128649 B CN103128649 B CN 103128649B CN 201110402474 A CN201110402474 A CN 201110402474A CN 103128649 B CN103128649 B CN 103128649B
- Authority
- CN
- China
- Prior art keywords
- slurry
- wafer
- cmp method
- grinding
- rinsing step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/12—Devices for exhausting mist of oil or coolant; Devices for collecting or recovering materials resulting from grinding or polishing, e.g. of precious metals, precious stones, diamonds or the like
Abstract
The present invention relates to semiconductor fabrication process, the method particularly relating to effectively reduce the grinding agent residual introduced in CMP process.Comprise the following steps: grinding steps according to the cmp method of the present invention, utilize slurry to come the surface of grinding crystal wafer；And rinsing step, utilize the surface of wafer described in fluid flushing to remain in the slurry on described surface with removal, wherein, also to slurry described in the surface transport of described wafer in described rinsing step.
Description
Technical field
The present invention relates to semiconductor fabrication process, the method particularly relating to effectively reduce the grinding agent residual introduced in CMP process.
Background technology
In wafer manufacturing process, need its surface is polished to obtain smooth surface.Chemically mechanical polishing is a kind of conventional glossing, and it utilizes grinding agent (generally comprising disperse silicon in chemical solvent or alumina particle) to remove the uneven of crystal column surface.When polishing, wafer is arranged on the abrasive disk of buffing machine, and grinding agent is transported to crystal column surface, and grinding head utilizes grinding agent to come grinding crystal wafer surface, to obtain smooth surface.After terminating to grind, fluid (such as deionized water) is utilized to wash away crystal column surface to be got rid of by the slurry etc. of residual.
But the effect washed away is the most unsafty, this causes crystal column surface to have more residual slurry, thus affects the yield of product.To this, usually use the measure such as consumptive material or routine cleaning buffing machine of replacing, but these modes waste time and energy, and also add manufacturing cost.Another kind of method be by adjusting the chemical flow of cleaning machine, the means such as the gap that reduces between cleaning brush and crystal column surface, but often adjusting effusion meter can reduce its service life, and reduces the effect in cleaning brush gap inconspicuous.
Summary of the invention
Present invention seek to address that disadvantages mentioned above, it is provided that a kind of cmp method that can reduce remaining grinding agent, it has the advantage that realization is convenient, implementation cost is low.
The above-mentioned purpose of the present invention is realized by following technical proposal:
A kind of cmp method that can reduce leftover slurry, comprises the following steps:
Grinding steps, utilizes slurry to come the surface of grinding crystal wafer；And
Rinsing step, utilizes the surface of wafer described in fluid flushing to remain in the slurry on described surface with removal, wherein, also to slurry described in the surface transport of described wafer in described rinsing step.
Preferably, in above-mentioned cmp method, described fluid is deionized water, and the pH value of described slurry is between 10-11.
Preferably, in above-mentioned cmp method, in described rinsing step, described slurry is set to the speed of the surface transport of described wafer the pH value on the surface of described wafer is between 8-9.
Preferably, in above-mentioned cmp method, described grinding steps includes:
Described grinding mechanism grinds the middle section on the surface of described wafer；And
Described grinding mechanism grinds the marginal area on the surface of described wafer.
Preferably, in above-mentioned cmp method, the described rinsing step persistent period is 6 seconds.
From combine accompanying drawing described further below, it will make above and other objects of the present invention and advantage be more fully apparent from.
Accompanying drawing explanation
Fig. 1 shows the schematic diagram of a kind of polissoir being typically used for CMP process.
Fig. 2 is the schematic diagram of the cmp method according to present pre-ferred embodiments.
Fig. 3 is to be utilized respectively the cmp method of prior art and process the effect comparison figure of wafer according to the cmp method of present pre-ferred embodiments.
Detailed description of the invention
The detailed description of the invention of the present invention is described to illustrate the present invention below with reference to accompanying drawing.It should be understood that what these detailed description of the invention were merely exemplary, for the spirit and scope of the present invention and unrestrictedly act on.
In this manual, " comprising " and the term of " including " etc represents in addition to having the unit and step having in the specification and in the claims directly and clearly state, technical scheme is also not excluded for having other unit directly or clearly do not stated and the situation of step.Furthermore, term " wafer " is here commonly referred to as the single crystal semiconductor substrate of circle, and it is formed integrated circuit.
Fig. 1 shows the schematic diagram of a kind of polissoir 10 being typically used for CMP process.This equipment 10 includes carrying the abrasive disk 130 of grinding head 110, grinding pad 120 and the Supported abrasive pad 120 of wafer 20 (it includes substrate 20A, the semiconductor device 20B that is formed on substrate and the silicon oxide protective layer 20C of covering device).Grinding head 110 includes retainer ring 110A accommodating wafer 20 and the barrier film 110B being arranged between wafer 20 and retainer ring inwall.
Polissoir 10 generally comprises controller (not shown); under the control of this controller; suitable pressure is applied on the back side of wafer 20 (namely surface of substrate 20A) by barrier film 110B; the speed that grinding head 110 and abrasive disk 130 can change separately rotates, and slurry 30 and/or other material are transported to the surface of wafer 20 (i.e. the surface of silicon oxide protective layer 20C) according to certain flow.
At equipment run duration, form required grinding pressure by barrier film 110B at the back side of wafer 20.Meanwhile, grinding head 110 rotates in preset speed around rotating shaft 140, and abrasive disk 130 rotates in preset speed around rotating shaft 150.According to being ground the type on surface, can comprise silicon oxide particle or alumina particle in slurry 30, pH value is reasonable is between 10-11 and mean diameter is 20-200 nanometer.Under the respective rotation of downforce, grinding head 110 and abrasive disk 130 and the common effect of the chemistry of slurry 30 and mechanical effect of barrier film 110B applying, the silicon oxide protective layer surface of wafer 20 is ground to required flatness and thickness.
After completing to grind; grinding head 110 and abrasive disk 130 are still within rotation status (but when rotating speed can be differently configured from grinding), and wiper mechanism (not shown) remains in the slurry on surface to the surface of silicon oxide protective layer 20C injection deionized water with removal.Wafer 20 takes out after the cleaning is completed from retainer ring 110A of grinding head 110, and wiper mechanism can spray deionized water with the slurry clearly remaining on abrasive disk to abrasive disk 130 subsequently.
Fig. 2 is the schematic diagram of the cmp method according to present pre-ferred embodiments.Convenient, here as a example by the polissoir 10 shown in Fig. 1 for illustrating.It should be noted however that the method for the present invention is also suitable for the polissoir of other structures.
The present inventor finds after further investigation, if add slurry when cleaning wafer 20, not only will not increase the residual slurry amount of crystal column surface, can also significantly reduce residual quantity on the contrary.This is because when cleaning wafer, the slurry added serves the effect (even if also the pH value of crystal column surface is closer to pH value of slurry) of buffering pH value, so that the electromotive force between wafer 20 with grinding pad 120 is close or equal, this causes crystal column surface and slurry to form like charges.Due to the effect of repelling each other, the slurry of residual will be more readily pulled from crystal column surface.Based on above-mentioned discovery, in the present embodiment, during cleaning in addition to the fluid to crystal column surface injection deionized water etc, carry slurry to crystal column surface the most simultaneously.
As in figure 2 it is shown, the most in step 210, wafer 20 is loaded into retainer ring 110A of grinding head 110.
Subsequently enter step 220, now start the silicon oxide protective layer surface transport slurry 30 to wafer 20.
The most in step 230, downforce is applied by the barrier film 110B of grinding head 110 to wafer 20 so that the middle section on the surface of silicon oxide protective layer 20C is ground by grinding pad 120 by slurry 30.This process of lapping duration according to needed for depending on the flatness of wafer that reaches and thickness.
Enter in step 240 after terminating the grinding of middle section, start the marginal area on silicon oxide protective layer 20C surface is ground, so that marginal area and middle section have same or like flatness and thickness.
Subsequently enter step 250, initially enter cleaning process.Now, wiper mechanism (not shown) is to silicon oxide protective layer 20C surface injection high-pressure fluid (such as plasma water).As it has been described above, unlike the prior art, in the present embodiment, slurry 30 is still sent to silicon oxide protective layer 20C surface.Now wafer 20 and abrasive disk 130 are in rotation status; therefore deionized water and slurry 30 can enter silicon oxide protective layer 20C surface; the pH value making silicon oxide protective layer 20C surface is comparatively close to the pH value of slurry 30, is thus advantageous to the removal of leftover slurry.In the example of a concrete application; the pH value of slurry is between 10-11, and flushing fluid is deionized water, and when therefore cleaning, the pH value of silicon oxide protective layer 20C near surface is between 8-9; and when only with deionized water, the pH value of silicon oxide protective layer 20C near surface is about 7.
The most in step 260, wafer 20 is taken off from retainer ring 110A, grinding pad etc. is carried out.Now, stop conveying slurry, wash away only with rinsing fluid.
Fig. 3 is to be utilized respectively the cmp method of prior art and process the effect comparison figure of wafer according to the cmp method of present pre-ferred embodiments, wherein what the figure of top half was corresponding is the baseline defect figure of the wafer utilizing the cmp method of prior art to process, and the figure correspondence of the latter half is the baseline defect figure utilizing the wafer processed according to the cmp method of present pre-ferred embodiments.
In figure 3, wafer is divided into multiple small pieces, wherein band density bullet for defective small pieces.As seen from the figure, in the wafer after the cmp method utilizing present pre-ferred embodiments processes, the quantity of defective small pieces significantly reduces.
Following table show an exemplary polissoir technological process and arranges menu.nullSuch as this table finding，This flow process comprises rotating speed and is slowly increased (Rampup)、Middle section grinds (Mainpolish)、Marginal area grinds (Edgepolish)、Wafer cleaning (Rinse1) and grinding pad clean steps (step1-step5) such as (Rinse2)，For each step，Rotating speed (HeadRPM) and the acceleration (HeadAccel) of grinding head can be pre-set、The rotating speed (PlatenRPM) of abrasive disk and acceleration (PlatenAccel)、Scan pattern (the Type under HeadSweep hurdle of grinding head、Zone and speed)、Selecting of cleaning model (Rinse)、The flow (Deliv1 (ml/min)) of slurry、Rinse the parameter such as the flow (Deliv2 (ml/min)) of fluid and the duration (Bytime/Endpoint) of each step.When above-described embodiment is applied to above-mentioned polissoir, it is not necessary to change the structure of equipment, technological process only need to arrange menu and make a small amount of slurry residual volume revised and can substantially reduce crystal column surface, this is one prominent advantage of the present invention.
It is understood that above-described embodiment is the description of the invention rather than limitation of the present invention, any each fall within scope without departing from the innovation and creation in the range of true spirit within.
Claims (5)
1. can reduce a cmp method for leftover slurry, comprise the following steps:
Grinding steps, utilizes slurry to come the surface of grinding crystal wafer；And
Rinsing step, utilizes the surface of wafer described in fluid flushing to remain in the slurry on described surface with removal,
Wherein, also to slurry described in the surface transport of described wafer in described rinsing step.
2. cmp method as claimed in claim 1, wherein, described fluid is deionized water, and the pH value of described slurry is between 10-11.
3. cmp method as claimed in claim 2, wherein, in described rinsing step, described slurry is set to the speed of the surface transport of described wafer the pH value on the surface of described wafer is between 8-9.
4. cmp method as claimed in claim 1, wherein, described grinding steps includes:
Grind the middle section on the surface of described wafer；And
Grind the marginal area on the surface of described wafer.
5. cmp method as claimed in claim 1, wherein, the described rinsing step persistent period is 6 seconds.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110402474.5A CN103128649B (en) | 2011-11-28 | 2011-11-28 | The cmp method of leftover slurry can be reduced |
| PCT/CN2012/084033 WO2013078934A1 (en) | 2011-11-28 | 2012-11-02 | Chemical mechanical polishing method for reducing residual slurry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110402474.5A CN103128649B (en) | 2011-11-28 | 2011-11-28 | The cmp method of leftover slurry can be reduced |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103128649A CN103128649A (en) | 2013-06-05 |
| CN103128649B true CN103128649B (en) | 2016-08-03 |
Family
ID=48489433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110402474.5A Active CN103128649B (en) | 2011-11-28 | 2011-11-28 | The cmp method of leftover slurry can be reduced |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103128649B (en) |
| WO (1) | WO2013078934A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104802068B (en) * | 2014-01-24 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN107398780B (en) * | 2016-05-18 | 2020-03-31 | 上海新昇半导体科技有限公司 | Double-side polishing method for wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0967049A1 (en) * | 1998-06-25 | 1999-12-29 | Speedfam Co., Ltd. | Polishing apparatus |
| CN1618569A (en) * | 2003-11-17 | 2005-05-25 | 台湾积体电路制造股份有限公司 | Cmp process and process for polishing copper layer oxide on base |
| CN1815696A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Chemical-mechanical grinding method |
| CN102814725A (en) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | Chemical mechanical polishing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6036785A (en) * | 1997-05-02 | 2000-03-14 | Ferrell; Gary W. | Method for removing chemical residues from a surface |
| JP3701126B2 (en) * | 1998-09-01 | 2005-09-28 | 株式会社荏原製作所 | Substrate cleaning method and polishing apparatus |
-
2011
- 2011-11-28 CN CN201110402474.5A patent/CN103128649B/en active Active
-
2012
- 2012-11-02 WO PCT/CN2012/084033 patent/WO2013078934A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0967049A1 (en) * | 1998-06-25 | 1999-12-29 | Speedfam Co., Ltd. | Polishing apparatus |
| CN1618569A (en) * | 2003-11-17 | 2005-05-25 | 台湾积体电路制造股份有限公司 | Cmp process and process for polishing copper layer oxide on base |
| CN1815696A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Chemical-mechanical grinding method |
| CN102814725A (en) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | Chemical mechanical polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103128649A (en) | 2013-06-05 |
| WO2013078934A1 (en) | 2013-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9630295B2 (en) | Mechanisms for removing debris from polishing pad | |
| TWI620240B (en) | Methods and apparatus for post-chemical mechanical planarization substrate cleaning | |
| CN104350583B (en) | The manufacture method of semiconductor wafer | |
| KR101798700B1 (en) | Polishing method and polishing apparatus | |
| US9138861B2 (en) | CMP pad cleaning apparatus | |
| CN102553849B (en) | Cleaning device and cleaning method for fixed grinding particle polishing pad | |
| WO2001062436A1 (en) | Method and apparatus for polishing outer peripheral chamfered part of wafer | |
| JPWO2003071592A1 (en) | Polishing method and apparatus | |
| JP2014028425A (en) | Method for grinding substrate of semiconductor device | |
| TW201742135A (en) | Method for a double side polishing of a semiconductor wafer | |
| CN103128649B (en) | The cmp method of leftover slurry can be reduced | |
| JP2002299293A (en) | Polishing method and polishing apparatus for wafer | |
| US20200198090A1 (en) | Cmp apparatus and method of performing ceria-based cmp process | |
| JP5286381B2 (en) | Semiconductor wafer polishing method | |
| JP2008028232A (en) | Apparatus and method for polishing semiconductor substrate, and semiconductor device manufacturing method | |
| JP2000042914A (en) | Grinding device and method and manufacture of semiconductor device and thin film magnetic head | |
| JP5533355B2 (en) | Glass substrate for magnetic recording medium, double-side polishing apparatus, glass substrate polishing method, and glass substrate manufacturing method | |
| JP2016043471A (en) | Substrate processing apparatus | |
| JP2003220554A (en) | Polishing apparatus and polishing method for material to be polished using the same | |
| JP2009147044A (en) | Semiconductor device manufacturing method and manufacturing apparatus | |
| JP5257752B2 (en) | Polishing pad dressing method | |
| JP6346541B2 (en) | Buff processing apparatus and substrate processing apparatus | |
| JP2003251555A (en) | Polishing method | |
| JP5534488B2 (en) | Polishing apparatus and polishing pad dressing method in polishing apparatus | |
| JP2001127022A (en) | Polishing method and polishing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |