CN1815696A - Chemical-mechanical grinding method - Google Patents
Chemical-mechanical grinding method Download PDFInfo
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- CN1815696A CN1815696A CN 200510006242 CN200510006242A CN1815696A CN 1815696 A CN1815696 A CN 1815696A CN 200510006242 CN200510006242 CN 200510006242 CN 200510006242 A CN200510006242 A CN 200510006242A CN 1815696 A CN1815696 A CN 1815696A
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Abstract
The invention discloses method for improving grinding effect of chemically machinery grinding technique in use of high selective grinding pulp. After a prearranged time of carrying out a chemically machinery grinding procedure, deionized water is provided on grinding pad to continue chemically machinery grinding procedure in order to raise grinding speed and effect.
Description
Technical field
The present invention relates to a kind of chemical and mechanical grinding method, in order to improve high selectivity ground slurry (highselective slurry, HSS) chemical mechanical milling tech (chemical-mechanical polishing, CMP) method of effect, particularly relate to a kind of add deionized water in CMP technology to improve the method for HSSCMP grinding effect.
Background technology
In semiconductor technology, cmp (CMP) technology is the most generally to be used at present, also is most important a kind of planarization simultaneously.
Generally speaking, the ground slurry that the utilization of CMP technology is suitable and the mode of mechanical lapping, remove the aimed thin film layer (target thin film) that has irregular surface on the semiconductor chip equably, so that semiconductor chip can have the surface of smooth and regular (regular and planar) after handling through CMP.Wherein, ground slurry generally is made of chemical assistant and grinding powder, and chemical assistant may be pH value buffer, oxidant or interfacial agent etc., then may be compositions such as tripoli or alum clay as for grinding powder.By the chemical reaction that chemical assistant provided, and grind the mechanical lapping effect that produces between powder and wafer and grinding pad, can effectively planarization wafer surface.
Present CMP technology has been widely used in shallow-channel insulation, and (shallow trench isolation is in technology STI).Please refer to Fig. 1 to Fig. 3, Fig. 1 to Fig. 3 is the process schematic representation of an existing shallow-channel insulation.As shown in Figure 1, comprise a pad oxide 12 and a silicon nitride layer (Si in the substrate 10
3N
4) 14, and also comprise a shallow ridges 16 in the substrate 10, and (chemical vapor deposition, CVD) etc. method is inserted silicon dioxide (SiO with chemical vapour deposition (CVD)
2) layer is 18 as dielectric layer.Then, shallow ridges 16 outer (overburden) silicon dioxide layers 18 are carried out a CMP technology, make to grind to end at silicon nitride layer 14, as shown in Figure 2.Then please refer to Fig. 3, remove silicon nitride layer 14 and pad oxide 12, under ideal state, silicon dioxide layer 18 meetings in the irrigation canals and ditches 16 have a difference of height Δ D with the substrate surface of contiguous active area (active region), in the preferred case, if CMP technology can planarization also evenly remove the outer silicon dioxide layer 18 of irrigation canals and ditches, and grind really and end on the silicon nitride layer 14, then difference of height Δ D distance just should be, be the substrate surface that shallow ridges 16 interior silicon dioxide layers 18 are higher than active area, can effectively suppress leakage current (leakage).
Yet, in actual process, make difference of height Δ D for just in order to reach, the decision of planarization of CMP technology and grinding endpoint is a challenge of CMP technology always, and its influencing factor includes composition, platform rotating speed (platen rotationspeed), chip carrier downforce (head down force) of the composition of characteristic (for example compactness), silicon dioxide layer uniform surface (uniformity), ground slurry (slurry) of silicon dioxide layer and pH value, grinding pad (polishing pad) or the like.
In shallow-channel insulation technology, in order to ensure the 16 outer silicon dioxide layers 18 of the shallow ridges on the silicon nitride layer 14 are removed fully, and avoid when grinding silicon nitride layer 14 to be worn through and undermine the element of active region, therefore must improve the grinding selectivity ratio of silicon dioxide/silicon nitride.The solution of industry is to use a kind of high selectivity ground slurry (high selective slurry, HSS), the alkaline aqueous solution slurry that replaces traditional silicon dioxide whetstone grain (silicaabrasive) carries out CMP technology, to improve the grinding selectivity ratio of silicon dioxide/silicon nitride, avoid transition etches both silicon nitride layer 14 and expose substrate 10.This kind high selectivity ground slurry has been applied in the STI CMP technology of 130 nanometers (nm), to produce the element that has than high-reliability at present.
Yet, although the high selectivity ground slurry can improve the effect of STI CMP technology, but have per minute 3000 dust (angstrom compared to traditional silicon dioxide whetstone grain ground slurry, grinding rate ) uses the STI CMP technology of high selectivity ground slurry to have the slower problem existence of grinding rate.Please refer to Fig. 4, Fig. 4 shows that the existing high selectivity ground slurry that uses carries out the curve of the grinding rate of STI CMP technology to milling time, and along with milling time is long more, grinding rate is just slow more, therefore is difficult to reach the grinding rate of per minute 1500 dusts.In addition, the CMP technology of high selectivity ground slurry also be easy to generate ground slurry residual, wafer is produced problems such as scratches (microscratch) and silicon dioxide layer residue on the silicon nitride mask layer, even have influence on the restriction and the technology allowance (process window) of the outer silicon dioxide layer thickness of irrigation canals and ditches.
In United States Patent (USP) case numbers the 6th, 132, No. 294, disclosed a kind of method of the CMP of improvement technology, so that breaking away from grinding pad easily after CMP technology, wafer is difficult for producing scratch or damage.Its method is with traditional silicon dioxide or aluminium oxide after the CMP technology that is ground slurry finishes, the stop supplies ground slurry, and, improve the rotary speed of grinding pad simultaneously, so that wafer can break away from grinding pad smoothly and carry out next technology with the water feeding.Yet, the CMP technology situation of this prior art and not mentioned relevant high selectivity ground slurry, also not mentioned when how to solve the high selectivity ground slurry at shallow groove isolation grinding rate slow and influence problem such as technology allowance.
Therefore, how to improve grinding rate and effect that the high selectivity ground slurry is applied to CMP technology, still for needing the important issue of research and development.
Summary of the invention
Therefore main purpose of the present invention is to provide a kind of chemical and mechanical grinding method, grinding effect in order to the CMP technology of improving the high selectivity ground slurry, it utilizes the back segment in CMP technology to feed deionized water (deionized, DI), proceeding grinding technics, and solve the problem that is produced in the CMP technology of above-mentioned existing high selectivity ground slurry.
According to the present invention, disclose a kind of chemical and mechanical grinding method, in order to improve the grinding effect of a high selectivity ground slurry CMP technology.One grinding pad (polishing pad) and a chip carrier (head) at first are provided, and wafer is loaded on the chip carrier.Then provide a high selectivity ground slurry on grinding pad, again chip carrier is bestowed a chip carrier downforce (head down force), so that wafer contacts grinding pad and carries out a chemical mechanical milling tech.After grinding a period of time, provide deionized water on grinding pad, and utilize deionized water to continue to carry out grinding technics then.
The present invention also provides a kind of chemical and mechanical grinding method, and in order to improve the grinding effect of high selectivity ground slurry chemical mechanical milling tech, this method comprises:
Utilize one first grinding pad and a chip carrier, a wafer is carried out one first chemical mechanical milling tech, and in this first chemical mechanical milling tech, feed one first high selectivity ground slurry;
Back segment in this first chemical mechanical milling tech feeds deionized water to dilute this first high selectivity ground slurry;
Stop this first chemical mechanical milling tech;
Utilize one second grinding pad that this wafer is carried out one second chemical mechanical milling tech, and in this second chemical mechanical milling tech, feed one second high selectivity ground slurry; And
Back segment in this second chemical mechanical milling tech provides deionized water to dilute this second high selectivity ground slurry.
Because the present invention provides deionized water to carry out grinding technics at the back segment of CMP technology, therefore the deionized water concentration that can dilute the high selectivity ground slurry, increase the grinding rate of CMP technology, reduce the injury of wafer scratches simultaneously, effectively improve technology allowance and defective control (defectivitycontrol).
Description of drawings
Fig. 1 to Fig. 3 is the process schematic representation of an existing shallow-channel insulation.
Fig. 4 shows that the existing high selectivity ground slurry that uses carries out the curve of the grinding rate of STI CMP technology to milling time,
Fig. 5 to Fig. 9 improves the process schematic representation of the method for a high selectivity ground slurry CMP technology grinding effect for the present invention.
Figure 10 for the silicon dioxide layer amount of removing of the inventive method to adding the curve chart of the milling time behind the deionized water.
Figure 11 for the silicon nitride layer amount of removing to adding the curve chart of the milling time behind the deionized water.The simple symbol explanation
10 substrates, 12 pad oxides
14 silicon nitride layers, 16 shallow ridges
18 silicon dioxide layers, 50 first grinding pads
52 first grinding plates, 54 chip carriers
56 wafers, 58,62,70,74 feed pipes
60 first high selectivity ground slurries
64 deionized waters, 66 second grinding pads
68 second grinding plates, 72 second high selectivity ground slurries
Embodiment
Please refer to Fig. 5 to Fig. 9, Fig. 5 to Fig. 9 improves the process schematic representation of the method for a high selectivity ground slurry CMP technology grinding effect for the present invention, and in this embodiment, the CMP process application is in the technology of a shallow-channel insulation, to remove the outer silicon dioxide layer of irrigation canals and ditches.As shown in Figure 5, at first provide one first grinding pad 50 and a chip carrier 54, wherein first grinding pad 50 is arranged on one first grinding plate (platen) 52, and chip carrier 54 is used for fixing a wafer 56.Wafer 56 is preferably semiconductor wafer, be manufactured with integrated circuit components such as semiconductor on it, and wafer 56 is fixed on the chip carrier 54 in separable mode.
Then as shown in Figure 6, provide a chip carrier downforce F to chip carrier 54
1,, and one first high selectivity ground slurry 60 is fed to first grinding pad 50, to carry out one the one CMP technology by feed pipe (slurryfeed) 58 so that wafer 56 contacts with first grinding pad 50 on being located at first grinding plate 52.In a CMP technology, the chip carrier 54 and first grinding pad 50 respectively have a chip carrier rotating speed and one first grinding pad rotating speed, rotate towards the direction of arrow A and arrow B respectively.
Then, please refer to Fig. 7, after carrying out the CMP technology of a scheduled time, utilize another feed pipe 62 to provide deionized water 64, and continue to carry out a CMP technology several seconds, be preferably 5～60 seconds in first grinding pad 50, stop a CMP technology then, make wafer 56 break away from first grinding pad 50.It should be noted that, can cause grinding rate to reduce because improve the chip carrier rotating speed and the first grinding pad rotating speed, when therefore the inventive method continues to carry out a CMP technology feeding deionized water 64, all do not increase the chip carrier rotating speed and the first grinding pad rotating speed, to guarantee after deionized water 64 feeds, to continue to improve the grinding rate of a CMP technology.
Then as shown in Figure 8, provide one second grinding pad 66 to be arranged on one second grinding plate 68, carry out one the 2nd CMP technology with preparation.On the other hand, second grinding pad 66 is also alternative to be replaced with first grinding pad 50, its method is to utilize chip carrier 54 that wafer 56 is removed first grinding pad, 50 surfaces earlier, then utilize one to transfer device (conditioner) and deionized water to come first grinding pad 50 in the CMP technology is cleaned again, the grinding pad so that first grinding pad 50 that cleans up replaces second grinding pad 66 as the 2nd CMP technology uses.In the 2nd CMP technology, provide a chip carrier downforce F
2So that wafer 56 contacts second grinding pad 66, utilize feed pipe 70 to provide one second high selectivity ground slurry 72 simultaneously to second grinding pad 66, and by making chip carrier 54 have a chip carrier rotating speed towards direction A, and second grinding pad 66 have one second grinding pad rotating speed towards direction C, with to wafer 56 grinding technics.
Then, after carrying out the 2nd CMP technology of a scheduled time, for example 50～80 seconds, stop to feed the second high selectivity ground slurry 72, and feed deionized water 64 by feed pipe 74, and keep the original chip carrier rotating speed and the second grinding pad rotating speed, and continued to carry out the 2nd CMP technology several seconds, be preferably 5～60 seconds.Stop second chemical mechanical milling tech then.
In the present invention, the first high selectivity ground slurry 60 and the second high selectivity ground slurry 72 are one to contain cerium (ceric-base) slurry or and contain zirconium slurry (zirconic-base) slip material, for example for comprising ceria (ceria, CeO
2) or zirconium dioxide (zirconia, ZrO
2) slurry.
In addition, according to the inventive method, can be according to arts demand, when carrying out first or second chemical mechanical milling tech, selectivity reduces chip carrier downforce F
1Or F
2, to adjust grinding technics in preferred process conditions.Moreover, if arts demand, the the 3rd, the 4th grinding pad can also be provided, respectively wafer 56 is carried out one the 3rd and Four Modernizations mechanical milling tech, and in order to improve the grinding rate of high selectivity ground slurry, back segment at each chemical mechanical milling tech all can feed deionized water, has diluted the concentration of high selectivity ground slurry, and then has improved grinding rate and grinding effect.
Because the inventive method feeds deionized water (no matter whether stopping to continue to feed the high selectivity ground slurry) in the shallow-channel insulation CMP of high selectivity ground slurry technology back segment, therefore the viscosity of the high property the selected ground slurry after the dilution can reduce, improve grinding rate, reduce residual slurry simultaneously and avoid producing scratch in wafer surface.Please refer to Figure 10 and Figure 11, Figure 10 for the silicon dioxide layer amount of removing of the inventive method to adding the curve chart of the milling time behind the deionized water, Figure 11 then for the silicon nitride layer amount of removing to adding the curve chart of the milling time behind the deionized water.As shown in figure 10, added behind the deionized water about 10 seconds, the amount of removing of silicon dioxide layer significantly increases, showing utilizes the inventive method can effectively improve the shallow-channel insulation CMP speed of high selectivity ground slurry, and as can be seen from Figure 11, removing speed for silicon nitride layer behind the adding deionized water obviously increases, and can keep the high selectivity of silicon dioxide/silicon nitride in the CMP technology.
Than prior art, the inventive method provides deionized water at the CMP of every section high selectivity ground slurry technology back segment, deionized water is mixed with the high selectivity ground slurry to continue to carry out CMP technology, and behind the adding deionized water, whether the lasting high selectivity ground slurry that feeds then can need and adjust according to actual grinding.According to the inventive method, can significantly improve the grinding rate of CMP technology, and then improve the grinding selectivity ratio of silicon dioxide/silicon nitride, and can improve problems such as ground slurry is residual, scratch wafer, and can not quicken removing of silicon nitride layer oxide layer.Therefore, the inventive method can effectively be improved technology allowance and process yield.
The above only is the preferred embodiments of the present invention, and is all according to equalization variation and modification that the present invention did, all should belong to covering scope of the present invention.
Claims (22)
1. chemical and mechanical grinding method, in order to the grinding effect of the chemical mechanical milling tech that improves the high selectivity ground slurry, this method comprises:
One grinding pad and a chip carrier are provided, are mounted with a wafer on this chip carrier;
Provide a high selectivity ground slurry on this grinding pad, and provide a chip carrier downforce in this chip carrier, so that this wafer contacts this grinding pad and carries out a chemical mechanical milling tech, wherein this grinding pad and this chip carrier have a grinding pad rotating speed and a chip carrier rotating speed respectively; And
Provide deionized water on this grinding pad, and utilize deionized water to continue to carry out this grinding technics.
2. the method for claim 1, wherein this method is included in provides deionized water before this grinding pad, stops earlier providing this high selectivity ground slurry to this grinding pad.
3. the method for claim 1, wherein when deionized water was provided in this grinding pad, this high selectivity ground slurry continued to be provided in this grinding pad.
4. the method for claim 1, wherein when deionized water was provided in this grinding pad, this grinding pad rotating speed and this chip carrier rotating speed remained unchanged.
5. the method for claim 1, wherein when deionized water was provided in this grinding pad, this chip carrier downforce remained unchanged.
6. the method for claim 1 wherein when deionized water is provided in this grinding pad, reduces this chip carrier downforce simultaneously.
7. the method for claim 1, wherein after deionized water was provided, this grinding technics continued to carry out to stop after 5～60 seconds.
8. the method for claim 1, wherein this high selectivity ground slurry is one to contain cerium slurry or and contain the zirconium slurry.
9. method as claimed in claim 5, wherein this high selectivity ground slurry is one to comprise the slurry of ceria or zirconium dioxide.
10. the method for claim 1, wherein this chemical mechanical milling tech is applied to a shallow-channel insulation technology.
11. a chemical and mechanical grinding method, in order to improve the grinding effect of high selectivity ground slurry chemical mechanical milling tech, this method comprises:
Utilize one first grinding pad and a chip carrier, a wafer is carried out one first chemical mechanical milling tech, and in this first chemical mechanical milling tech, feed one first high selectivity ground slurry;
Back segment in this first chemical mechanical milling tech feeds deionized water to dilute this first high selectivity ground slurry;
Stop this first chemical mechanical milling tech;
Utilize one second grinding pad that this wafer is carried out one second chemical mechanical milling tech, and in this second chemical mechanical milling tech, feed one second high selectivity ground slurry; And
Back segment in this second chemical mechanical milling tech provides deionized water to dilute this second high selectivity ground slurry.
12. method as claimed in claim 11 wherein when diluting this first high selectivity ground slurry with deionized water, stops to feed this first high selectivity ground slurry.
13. method as claimed in claim 11 wherein when diluting this first high selectivity ground slurry with deionized water, continues to feed this first high selectivity ground slurry.
14. method as claimed in claim 11 wherein when diluting this second high selectivity ground slurry with deionized water, stops to feed this second high selectivity ground slurry.
15. method as claimed in claim 11 wherein when diluting this second high selectivity ground slurry with deionized water, continues to feed this second high selectivity ground slurry.
16. method as claimed in claim 11, wherein provide deionized water carry out this first or during this second chemical mechanical milling tech, this first grinding pad rotating speed or this second grinding pad rotating speed, and this chip carrier rotating speed remains unchanged.
17. method as claimed in claim 11, wherein when deionized water was provided in this first grinding pad or this second grinding pad, the downforce of this chip carrier remained unchanged.
18. method as claimed in claim 11 wherein when deionized water is provided in this first grinding pad or this second grinding pad, reduces the downforce of this chip carrier simultaneously.
19. method as claimed in claim 11, wherein after deionized water was provided, this first chemical mechanical milling tech or this second chemical mechanical milling tech continued to carry out to stop after 5～60 seconds.
20. method as claimed in claim 11, wherein this first and this second high selectivity ground slurry be one to contain cerium slurry or and contain the zirconium slurry.
21. method as claimed in claim 20, wherein this high selectivity ground slurry is one to comprise the slurry of ceria or zirconium dioxide.
22. method as claimed in claim 11, wherein this chemical mechanical milling tech is applied to a shallow-channel insulation technology.
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| CNB2005100062422A CN100468646C (en) | 2005-02-02 | 2005-02-02 | Chemical-mechanical grinding method |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103109355A (en) * | 2010-09-15 | 2013-05-15 | 株式会社Lg化学 | Polishing pad for CMP |
| CN103128649A (en) * | 2011-11-28 | 2013-06-05 | 无锡华润上华科技有限公司 | Chemical machinery polishing method capable of reducing residual slurry |
| CN103481174A (en) * | 2013-09-03 | 2014-01-01 | 宇环数控机床股份有限公司 | Polishing method for polygonal or curved workpieces |
| CN103702798A (en) * | 2011-06-21 | 2014-04-02 | 信越半导体株式会社 | Polishing head, polishing device, and workpiece polishing method |
| CN105990122A (en) * | 2015-02-15 | 2016-10-05 | 盛美半导体设备（上海）有限公司 | Method for reducing surface roughness of wafer |
| CN110181390A (en) * | 2018-02-23 | 2019-08-30 | 胜高股份有限公司 | The single-sided polishing method of chip |
| CN110520971A (en) * | 2017-04-13 | 2019-11-29 | 三菱电线工业株式会社 | The elastic membrane of the wafer holding of CMP device |
| CN110690114A (en) * | 2019-10-11 | 2020-01-14 | 武汉新芯集成电路制造有限公司 | CMP polishing method |
| CN111318955A (en) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | Chemical mechanical polishing apparatus and method for performing cerium oxide-based chemical mechanical polishing |
| CN114012604A (en) * | 2021-10-27 | 2022-02-08 | 长鑫存储技术有限公司 | Method and system for cleaning grinding pad, electronic equipment and storage medium |
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2005
- 2005-02-02 CN CNB2005100062422A patent/CN100468646C/en active Active
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103109355B (en) * | 2010-09-15 | 2016-07-06 | 株式会社Lg化学 | Grinding pad for CMP |
| CN103109355A (en) * | 2010-09-15 | 2013-05-15 | 株式会社Lg化学 | Polishing pad for CMP |
| CN103702798A (en) * | 2011-06-21 | 2014-04-02 | 信越半导体株式会社 | Polishing head, polishing device, and workpiece polishing method |
| CN103128649A (en) * | 2011-11-28 | 2013-06-05 | 无锡华润上华科技有限公司 | Chemical machinery polishing method capable of reducing residual slurry |
| CN103128649B (en) * | 2011-11-28 | 2016-08-03 | 无锡华润上华科技有限公司 | The cmp method of leftover slurry can be reduced |
| CN103481174A (en) * | 2013-09-03 | 2014-01-01 | 宇环数控机床股份有限公司 | Polishing method for polygonal or curved workpieces |
| CN103481174B (en) * | 2013-09-03 | 2015-09-23 | 宇环数控机床股份有限公司 | The finishing method of a kind of polygon or curve surface work pieces |
| CN105990122B (en) * | 2015-02-15 | 2020-03-27 | 盛美半导体设备(上海)股份有限公司 | Method for reducing surface roughness of wafer |
| CN105990122A (en) * | 2015-02-15 | 2016-10-05 | 盛美半导体设备（上海）有限公司 | Method for reducing surface roughness of wafer |
| CN110520971A (en) * | 2017-04-13 | 2019-11-29 | 三菱电线工业株式会社 | The elastic membrane of the wafer holding of CMP device |
| CN110520971B (en) * | 2017-04-13 | 2023-08-25 | 三菱电线工业株式会社 | Elastic film for wafer holding in CMP apparatus |
| CN110181390A (en) * | 2018-02-23 | 2019-08-30 | 胜高股份有限公司 | The single-sided polishing method of chip |
| CN111318955A (en) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | Chemical mechanical polishing apparatus and method for performing cerium oxide-based chemical mechanical polishing |
| CN110690114A (en) * | 2019-10-11 | 2020-01-14 | 武汉新芯集成电路制造有限公司 | CMP polishing method |
| CN114012604A (en) * | 2021-10-27 | 2022-02-08 | 长鑫存储技术有限公司 | Method and system for cleaning grinding pad, electronic equipment and storage medium |
| CN114012604B (en) * | 2021-10-27 | 2024-01-09 | 长鑫存储技术有限公司 | Method, system, electronic equipment and storage medium for cleaning polishing pad |
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