CN112775757A - Semiconductor machine and grinding method - Google Patents
Semiconductor machine and grinding method Download PDFInfo
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- CN112775757A CN112775757A CN202110008727.4A CN202110008727A CN112775757A CN 112775757 A CN112775757 A CN 112775757A CN 202110008727 A CN202110008727 A CN 202110008727A CN 112775757 A CN112775757 A CN 112775757A
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- wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a semiconductor machine and a grinding method, comprising the following steps: the first input pipeline is used for introducing first grinding liquid, the first nozzle is used for spraying the first grinding liquid onto the first grinding pad, and the first grinding pad is used for grinding the edge of the wafer. Therefore, the first grinding pad is provided according to the characteristics of the edge of the wafer, the edge of the wafer is ground through the first grinding pad, the effective processing of the edge of the wafer can be realized, and the problems that the edge of the wafer is easy to collapse or damage after the edge of the wafer is subjected to wet etching processing and the like are solved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor machine and a grinding method.
Background
In the manufacturing process of a semiconductor device, a plurality of thin films need to be deposited on the surface of a wafer, and as the number of the thin films increases, the thin films on the surface of the wafer often have the problem of uneven thickness, which is particularly obvious at the edge (below) of the wafer. The large thickness of the film layer at the edge of the wafer may cause defects of the semiconductor device, which affects the yield of the semiconductor device, and thus the edge of the wafer needs to be processed.
The edge of a wafer cannot be processed by the existing chemical mechanical polishing method, mainly by wet etching, but with the increase of the number of layers of thin films, the edge of the wafer is difficult to be effectively processed by the existing wet etching, so that the edge of the wafer is easy to collapse (peeling) or damage (damage). The wafer edge collapse easily causes the increase of scratches (scratch) in the subsequent chemical mechanical polishing process; the damage of the wafer edge causes the particles in the grinding fluid to be nested in the damaged part of the wafer in the subsequent chemical mechanical grinding process, so that the subsequent deposited film has the problems of bulge (bump) and the like.
Thus, a semiconductor tool is needed to efficiently process the edge of a wafer.
Disclosure of Invention
Accordingly, the present invention is directed to a semiconductor tool for efficiently processing the edge of a wafer.
In order to achieve the purpose, the invention has the following technical scheme:
a semiconductor tool, comprising:
the first input pipeline, a first nozzle connected with the first input pipeline, and a first grinding pad;
the first input pipeline is used for inputting a first grinding fluid; the first nozzle is used for spraying the first grinding liquid onto the first grinding pad; the first grinding pad is used for grinding the edge of the wafer.
Optionally, the upper portion and/or the lower portion of the first polishing pad has a groove structure, so as to simultaneously polish the upper surface edge and the lower surface edge of the wafer.
Optionally, the upper portion and/or the lower portion of the first polishing pad has a protruding structure to polish the edge of the wafer.
Optionally, the upper portion and the lower portion of the first polishing pad are separable, the bottom of the upper portion has a notch, the top of the lower portion has a notch, the notch of the bottom of the upper portion and the notch of the top of the lower portion form a groove structure, and the first polishing pad is used for polishing the upper surface edge and the lower surface edge of the wafer respectively or simultaneously.
Optionally, the method further includes:
the second input pipeline, a second nozzle connected with the second input pipeline, and a second grinding pad;
the second input pipeline is used for inputting second grinding fluid, the second nozzle is used for spraying the second grinding fluid onto the second grinding pad, and the second grinding pad is used for carrying out chemical mechanical grinding on the wafer.
Optionally, the first input pipeline includes a first branch and a second branch, and then the first nozzle is connected with the first branch;
further comprising: the second nozzle is connected with the second branch, and the second grinding pad is connected with the second branch;
the second nozzle is used for spraying the first grinding liquid onto the second grinding pad, and the second grinding pad is used for carrying out chemical mechanical grinding on the wafer.
Optionally, a first control valve is arranged on the first branch path, and the first control valve is used for controlling the flow rate of the first grinding fluid flowing to the first nozzle;
and a second control valve is arranged on the second branch and used for controlling the flow of the first grinding fluid flowing to the second nozzle.
Optionally, the first nozzle is connected to a rotatable device, and the rotatable device drives the first nozzle to rotate, so as to adjust an angle at which the first nozzle sprays the first grinding fluid.
Optionally, the second polishing pad is connected to a movable device, and the movable device drives the second polishing pad to move.
Optionally, the wafer is located on a lifting device on the wafer bearing device, and the lifting device is used for driving the wafer to move up and down.
Optionally, a rotating device is arranged on the wafer bearing device, and the rotating device is used for driving the wafer to rotate.
A semiconductor tool, comprising:
the first grinding pad is used for grinding the edge of the wafer;
the second grinding pad is used for carrying out chemical mechanical grinding on the surface of the wafer;
the second nozzle is connected with the second grinding pad and is used for spraying grinding liquid to the second grinding pad and/or the surface of the wafer;
and the first grinding pad grinds the edge of the wafer by using the grinding liquid left after the second grinding pad grinds the edge of the wafer.
Optionally, the method further includes: and the collecting device is used for collecting the residual grinding fluid after the second grinding pad is ground and spraying the residual grinding fluid onto the first grinding pad.
Optionally, the collecting device is located on the first polishing pad, or located near the edge of the wafer.
Optionally, the method further includes: and the detection device detects that the first grinding pad stops grinding when the grinding fluid collected by the collection device is insufficient.
Optionally, the method further includes:
a first nozzle connected to the first polishing pad;
the first nozzle is used for spraying the residual grinding fluid after the second grinding pad is ground to the surface of the first grinding pad and/or the wafer. A method of grinding comprising:
grinding the edge of the wafer by using the first grinding pad in the machine table;
and carrying out chemical mechanical polishing on the wafer.
The embodiment of the invention provides a semiconductor machine, which comprises: the first input pipeline is used for introducing first grinding liquid, the first nozzle is used for spraying the first grinding liquid onto the first grinding pad, and the first grinding pad is used for grinding the edge of the wafer. Therefore, the first grinding pad is provided according to the characteristics of the edge of the wafer, the edge of the wafer is ground through the first grinding pad, the effective processing of the edge of the wafer can be realized, and the problems that the edge of the wafer is easy to collapse or damage after the edge of the wafer is subjected to wet etching processing and the like are solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a semiconductor apparatus according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of another semiconductor apparatus according to an embodiment of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background art, the current cmp method cannot process the edge of the wafer, mainly the edge of the wafer is processed by wet etching, but as the number of layers of the thin film increases, the current wet etching is difficult to process the edge of the wafer effectively, so that the edge of the wafer is prone to collapse (peeling) or damage (damage). The wafer edge collapse easily causes the increase of scratches (scratch) in the subsequent chemical mechanical polishing process; the damage of the wafer edge causes the particles in the grinding fluid to be nested in the damaged part of the wafer in the subsequent chemical mechanical grinding process, so that the subsequent deposited film has the problems of bulge (bump) and the like. Thus, a semiconductor tool is needed to efficiently process the edge of a wafer.
To this end, an embodiment of the present application provides a semiconductor apparatus, including: the first input pipeline is used for introducing first grinding liquid, the first nozzle is used for spraying the first grinding liquid onto the first grinding pad, and the first grinding pad is used for grinding the edge of the wafer. Therefore, the first grinding pad is provided according to the characteristics of the edge of the wafer, the edge of the wafer is ground through the first grinding pad, the effective processing of the edge of the wafer can be realized, and the problems that the edge of the wafer is easy to collapse or damage after the edge of the wafer is subjected to wet etching processing and the like are solved.
In order to facilitate understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1 and fig. 2, a semiconductor apparatus according to an embodiment of the present disclosure includes:
a first input pipe 102, a first nozzle 104 connected to the first input pipe 102, a first polishing pad 106;
the first input pipeline 102 is used for inputting a first grinding fluid; the first nozzle 104 is used for spraying the first polishing liquid onto the first polishing pad 106; the first polishing pad 106 is used for polishing the edge of the wafer.
In this embodiment, a first end of the first input pipe 102 is connected to a liquid supply device (not shown) and a second end of the first input pipe 102 is connected to the first nozzle 104, the liquid supply device is used for supplying the polishing liquid, the first polishing liquid supplied by the liquid supply device flows to the first nozzle 104 through the first input pipe 102, and the first nozzle 104 sprays the first polishing liquid onto the first polishing pad 106. The first nozzle 104 may have a certain bending angle, and specifically, the material of the first nozzle 104 is a bendable material, so that the spraying direction of the first nozzle 104 is adjusted according to the direction of the first polishing pad 106, so that the first polishing liquid is sprayed onto the first polishing pad 106. The first nozzle 104 can also be connected to a rotatable device, and the rotatable device drives the first nozzle 104 to rotate so as to adjust the angle of the first nozzle 104 for spraying the first polishing liquid, thereby successfully spraying the first polishing liquid onto the first polishing pad 106. Specifically, the rotatable device may have a hollow structure and be positioned between the first input conduit 102 and the first nozzle 104 such that the first slurry flows through the first input conduit 102, the rotatable device to the first nozzle 104. Since the slurry is typically prepared by grinding particles of ultrafine solids (e.g., SiO in the nanometer range)2、Al2O3Particles, etc.), surfactants, stabilizers, oxidizing agents, etc., the abrasive particles providing the abrasive action and the oxidizing agent providing the corrosive dissolution action. The first polishing slurry on the first polishing pad 106 chemically reacts with the surface material on the wafer edge to form a relatively easily removable surface layer, which is abraded by the polishing particles in the first polishing slurry under the relative motion of the first polishing pad 106 and the wafer 108.
In a specific application, the first polishing pad 106 may be connected to a rotating device, and the rotating device drives the first polishing pad 106 to rotate while the wafer is still, so that the first polishing pad 106 and the wafer 108 move relatively. The first polishing pad 106 and the wafer 108 may also be connected to different rotating devices, respectively, to drive the first polishing pad 106 and the wafer 108 to rotate in different directions, so that the first polishing pad 106 and the wafer 108 move relatively.
In this embodiment, the upper portion and/or the lower portion of the first polishing pad 106 have a groove structure, where the upper portion and the lower portion refer to that the first polishing pad 106 is divided into two portions in the vertical direction, the groove structure may be disposed in the upper portion, the groove structure may also be disposed in the lower portion, and the groove structures may also be disposed in both the upper portion and the lower portion, for example, the upper portion or the lower portion of the first polishing pad 106 has a groove structure, and when the first polishing pad 106 polishes the wafer 108, the groove structure of the upper portion or the lower portion of the first polishing pad 106 is snapped with the wafer 108, so that the upper surface edge and the lower surface edge of the wafer 108 can be polished simultaneously. The upper portion and the lower portion of the first polishing pad 106 both have a groove structure, so that the groove structure of the upper portion is fastened to one wafer, and the groove structure of the lower portion is fastened to another wafer, thereby simultaneously polishing the upper surface edge and the lower surface edge of the two wafers. Obviously, when the upper portion and the lower portion of the first polishing pad 106 both have the groove structure, a certain distance is provided between the groove structure of the upper portion and the groove structure of the lower portion, so as to avoid the two chips being attached together and causing damage when the wafer edge is polished. A plurality of groove structures may be provided on the upper and/or lower portion of the first polishing pad 106, so that a plurality of wafer edges can be simultaneously polished.
In this embodiment, the upper portion and the lower portion of the first polishing pad 106 are separable, the bottom of the upper portion has a notch, the top of the lower portion has a notch, and the notch of the bottom of the upper portion and the notch of the top of the lower portion form a groove structure, so that the first polishing pad 106 can polish the upper surface edge and the lower surface edge of the wafer 108 respectively or simultaneously. Specifically, when the upper portion and the lower portion of the first polishing pad 106 are separated, the bottom notch of the upper portion can polish the upper surface edge of the wafer 108, and the top notch of the lower portion can polish the lower surface edge of the wafer 108. When the upper portion and the lower portion of the first polishing pad 106 are attached together, the notch at the bottom of the upper portion and the notch at the top of the lower portion form a groove structure, and the groove structure is fastened with the wafer 108, so that the upper surface edge and the lower surface edge of the wafer 108 can be polished simultaneously.
In a specific application, the size of the groove of the first polishing pad 106 in the extending direction may be similar to the size of the edge of the wafer 108, so that the first polishing pad 106 can better fit with the edge of the wafer 108, and the polishing effect on the edge of the wafer 108 is improved. Generally, since the wafer edge size is much smaller than the wafer 108, the size of the first polishing pad 106 in the extending direction of the wafer 108 surface is much smaller than the size of the polishing pad used for chemical mechanical polishing of the wafer 108.
In this embodiment, the upper portion and/or the lower portion of the first polishing pad 106 has a protruding structure to polish the edge of the wafer. For example, the upper portion or the lower portion of the first polishing pad 106 has a protrusion structure, and the wafer edge is polished by using the upper surface or the lower surface of the protrusion structure, where the upper surface and the lower surface are perpendicular to the surface of the first polishing pad 106. The upper portion and the lower portion of the first polishing pad 106 may be provided with a protrusion structure, for convenience of description, the protrusion structure provided on the upper portion of the first polishing pad 106 is referred to as a first protrusion, the protrusion structure provided on the lower portion of the first polishing pad 106 is referred to as a second protrusion, and one wafer may be polished by using the upper surface or the lower surface of the first protrusion, and the other wafer may be polished by using the upper surface or the lower surface of the second protrusion, so that the edges of the two wafers can be polished. A plurality of first protrusions may be partially provided on the first polishing pad 106, and/or a plurality of second protrusions may be provided on the lower portion of the first polishing pad 106, so that the edges of a plurality of wafers can be simultaneously polished. Obviously, a certain interval is provided between adjacent protrusions to prevent the wafers from being attached together and causing damage to the wafers.
In some embodiments, the first polishing pad 106 is connected to a movable device 118, and the movable device 118 moves the first polishing pad 106 up and down. When the first polishing pad 106 is needed to polish the wafer 108, the movable device 118 drives the first polishing pad 106 to be close to the wafer 108, and specifically, the groove of the first polishing pad 106 can be fastened to the edge of the wafer 108, so as to polish the upper surface edge and the lower surface edge of the wafer 108 at the same time. After the first polishing pad 106 finishes polishing the wafer 108, the movable device 118 moves the first polishing pad 106 away from the wafer 108, for example, the first polishing pad 106 can be moved above, below, or around the wafer 108.
In this embodiment, the wafer 108 is located on the lifting device 112 of the wafer carrier 114, and the lifting device 112 is used for driving the wafer 108 to move up and down, so that the wafer 108 and the first polishing pad 106 are better attached together, and the polishing efficiency of the first polishing pad 106 on the wafer 108 is improved. In a specific application, the wafer carrier 114 is provided with a rotating device 112, and the rotating device 112 can drive the wafer 108 to rotate, so that the first polishing pad 106 and the wafer 108 move relatively to each other, thereby polishing the edge of the wafer by the first polishing pad 106.
In this embodiment, the semiconductor apparatus further includes: referring to fig. 1, a second input pipe 116, a second nozzle 110 connected to the second input pipe 116, and a second polishing pad (not shown), wherein the second input pipe 116 is used for inputting a second polishing liquid, the second nozzle 110 is used for spraying the second polishing liquid onto the second polishing pad, and the second polishing pad is used for performing chemical mechanical polishing on the wafer. Specifically, the second polishing pad may be a polishing pad required for chemical mechanical polishing of a wafer, and the size of the second polishing pad is larger than that of the first polishing pad 106. The second input pipe 116 is used for inputting a second polishing liquid, which may be the same as or different from the first polishing liquid, and may be connected to the same liquid supply device when the second polishing liquid is the same as the first polishing liquid, and may also be deionized water, so as to clean the surface of the wafer 108. The second input pipe 116 inputs the second polishing liquid to the second nozzle 110, the second nozzle 110 sprays the second polishing liquid onto the second polishing pad, and the second polishing pad moves relative to the wafer 108 under the driving of the rotating device 112, so as to achieve the chemical mechanical polishing of the wafer 108. Specifically, when the first polishing solution input through the first input pipe 102 and the second polishing solution input through the second input pipe 116 are the same, since the size of the wafer edge is much smaller than that of the wafer 108, the amount of polishing solution required for processing the wafer edge is smaller than that required for chemical mechanical polishing of the wafer 108. Thus, control switches may be provided on the first input conduit 102 and the second input conduit 116, respectively, to control the amount of polishing fluid flowing to the first polishing pad 106 via the control switch on the first input conduit 102 and to control the amount of polishing fluid flowing to the second polishing pad via the control switch on the second input conduit 116.
In this embodiment, the first input pipe 102 includes a first branch and a second branch, and as shown in fig. 2, the first branch is connected to the first nozzle 104, the second branch is connected to the second nozzle 110, the second nozzle 110 is used for spraying the first polishing slurry onto a second polishing pad, and the second polishing pad is used for performing chemical mechanical polishing on the wafer 108. Specifically, a first control valve is arranged on the first branch, a second control valve is arranged on the second branch, the first control valve is used for controlling the flow rate of the first grinding fluid flowing to the first nozzle, and the second control valve is used for controlling the flow rate of the first grinding fluid flowing to the second nozzle. When the wafer edge needs to be polished, the first control valve is opened, and the second control valve is closed, so that the first polishing liquid is only sprayed to the first polishing pad. When the wafer 108 needs to be polished chemically and mechanically, the first control valve is closed, and the second control valve is opened, so that the first polishing slurry is only sprayed onto the second polishing pad.
The above detailed description of the semiconductor machine improved by the embodiment of the present application includes: the first input pipeline is used for introducing first grinding liquid, the first nozzle is used for spraying the first grinding liquid onto the first grinding pad, and the first grinding pad is used for grinding the edge of the wafer. Therefore, the first grinding pad is provided according to the characteristics of the edge of the wafer, the edge of the wafer is ground through the first grinding pad, the effective processing of the edge of the wafer can be realized, and the problems that the edge of the wafer is easy to collapse or damage after the edge of the wafer is subjected to wet etching processing and the like are solved.
An embodiment of the present application further provides a semiconductor machine, including:
the first grinding pad is used for grinding the edge of the wafer;
the second grinding pad is used for carrying out chemical mechanical grinding on the wafer;
the second nozzle is connected with the second grinding pad and is used for spraying grinding liquid to the second grinding pad and/or the surface of the wafer;
and the first grinding pad grinds the edge of the wafer by using the grinding liquid left after the second grinding pad grinds the edge of the wafer.
With the increase of the number of the thin film layers on the surface of the wafer, the thin film layers on the surface of the wafer often have the problem of uneven thickness, which is particularly obvious at the edge of the wafer. The machine in the embodiment of the present application includes a first polishing pad and a second polishing pad, the first polishing pad is used for polishing the edge of the wafer, and the second polishing pad is used for performing chemical mechanical polishing on the surface of the wafer. When a wafer is polished, a polishing liquid is generally used to immerse the surface of a polishing pad, then a pressure is applied to the polishing pad to press the surface of the wafer, the polishing liquid and the surface material of the wafer chemically react to form a surface layer which is relatively easy to remove, and then the surface layer is ground by polishing particles in the polishing liquid under the relative motion of the polishing pad and the wafer. Therefore, the machine station is provided with a nozzle connected with the second grinding pad for spraying the grinding fluid on the second grinding pad and/or the surface of the wafer, namely the grinding fluid can be sprayed on the second grinding pad or the surface of the wafer, and the grinding fluid can be sprayed on the second grinding pad and the surface of the wafer simultaneously. Then, the first polishing pad can utilize the residual polishing liquid after the second polishing pad is used for polishing the edge of the wafer, so that the polishing liquid is fully utilized, and the waste of the polishing liquid is avoided. When the second polishing pad is used to perform the chemical mechanical polishing on the wafer surface, in order to avoid the defect on the wafer surface caused by the non-uniform distribution of the polishing slurry on the wafer surface or the second polishing pad surface, usually more polishing slurry is introduced into the wafer surface or the second polishing pad surface, and the polishing slurry is uniformly distributed on the wafer surface or the polishing pad surface by the fluidity of the polishing slurry. After the second polishing pad is used to polish the wafer surface, there is a residual polishing slurry, i.e., the polishing slurry that has not reacted with the wafer surface. Therefore, the residual polishing liquid after the second polishing pad is used for polishing the edge of the wafer, so that the polishing liquid can be fully used.
Specifically, the collecting device may be used to collect the polishing liquid remaining after the polishing of the second polishing pad, and to spray the collected polishing liquid remaining after the polishing of the second polishing pad onto the first polishing pad. For example, the collecting device may be connected to one end of the first nozzle, the other end of the first nozzle may be connected to the first polishing pad, and then the collected polishing liquid remaining after the second polishing pad is polished may be sprayed onto the first polishing pad by using the first nozzle. The collecting device may be located on the first polishing pad to spray the polishing slurry onto the first polishing pad in time, or may be located near the edge of the wafer, for example, may be close to the edge of the wafer to collect the polishing slurry left after polishing by the second polishing pad in time.
In this embodiment, this board still includes detection device, and detection device is used for detecting the remaining lapping liquid after the second polishing pad that the collection device collected grinds, and when detection device detects the lapping liquid that the collection device collected not enough, first polishing pad stopped to grind. If the first polishing pad is continuously used for polishing the edge of the wafer due to the shortage of the polishing liquid in the collection device, defects may occur or the edge of the wafer may be damaged in the process of polishing the edge of the wafer due to the shortage of the polishing liquid. The embodiment of the present application further provides a grinding method, including:
grinding the edge of the wafer by using the first grinding pad in the machine table;
and carrying out chemical mechanical polishing on the wafer.
In this embodiment, the second polishing pad of the semiconductor machine can be used for performing chemical mechanical polishing on the wafer. After the edge of the wafer is polished, the wafer may be polished by other chemical mechanical polishing apparatuses.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the method embodiment, since it is substantially similar to the machine embodiment, the description is simple, and reference may be made to the partial description of the machine embodiment for the relevant points.
The foregoing is only a preferred embodiment of the present invention, and although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (17)
1. A semiconductor machine, comprising:
the first input pipeline, a first nozzle connected with the first input pipeline, and a first grinding pad;
the first input pipeline is used for inputting a first grinding fluid;
the first nozzle is used for spraying the first grinding liquid onto the first grinding pad;
the first grinding pad is used for grinding the edge of the wafer.
2. The apparatus of claim 1, wherein the upper portion and/or the lower portion of the first polishing pad has a groove structure for simultaneously polishing the upper surface edge and the lower surface edge of the wafer.
3. The apparatus of claim 1, wherein the first polishing pad has a raised structure on an upper portion and/or a lower portion thereof for polishing the edge of the wafer.
4. The apparatus of claim 1, wherein the upper portion and the lower portion of the first polishing pad are separable, and the bottom of the upper portion has a notch, the top of the lower portion has a notch, and the notch of the bottom of the upper portion and the notch of the top of the lower portion form a groove structure, and the first polishing pad is used for polishing the upper surface edge and the lower surface edge of the wafer respectively or simultaneously.
5. The machine station of claim 1, further comprising:
the second input pipeline, a second nozzle connected with the second input pipeline, and a second grinding pad;
the second input pipeline is used for inputting second grinding liquid, the second nozzle is used for spraying the second grinding liquid onto the second grinding pad, and the second grinding pad is used for carrying out chemical mechanical grinding on the surface of the wafer.
6. The machine station of claim 1, wherein said first input duct comprises a first branch and a second branch, and said first nozzle is connected to said first branch;
further comprising: the second nozzle is connected with the second branch, and the second grinding pad is connected with the second branch;
the second nozzle is used for spraying the first grinding liquid onto the second grinding pad, and the second grinding pad is used for carrying out chemical mechanical grinding on the surface of the wafer.
7. The machine table of claim 6, wherein a first control valve is disposed on the first branch path, and the first control valve is configured to control a flow rate of the first polishing slurry flowing to the first nozzle;
and a second control valve is arranged on the second branch and used for controlling the flow of the first grinding fluid flowing to the second nozzle.
8. The machine table of any one of claims 1 to 7, wherein the first nozzle is connected to a rotatable device, and the rotatable device drives the first nozzle to rotate so as to adjust an angle at which the first nozzle sprays the first polishing slurry.
9. The machine table of any one of claims 1 to 7, wherein the second polishing pad is connected to a movable device, and the movable device drives the second polishing pad to move.
10. The machine platform of any one of claims 1 to 7, wherein the wafer is located on a lifting device on the wafer carrier, and the lifting device is configured to move the wafer up and down.
11. The machine table of any one of claims 1 to 7, wherein a rotation device is disposed on the wafer carrying device, and the rotation device is configured to rotate the wafer.
12. A semiconductor machine, comprising:
the first grinding pad is used for grinding the edge of the wafer;
the second grinding pad is used for carrying out chemical mechanical grinding on the surface of the wafer;
the second nozzle is connected with the second grinding pad and is used for spraying grinding liquid to the second grinding pad and/or the surface of the wafer;
and the first grinding pad grinds the edge of the wafer by using the grinding liquid left after the second grinding pad grinds the edge of the wafer.
13. The machine station of claim 12, further comprising: and the collecting device is used for collecting the residual grinding fluid after the second grinding pad is ground and spraying the residual grinding fluid onto the first grinding pad.
14. The apparatus of claim 13, wherein the collection device is located on the first polishing pad or near an edge of the wafer.
15. The machine station of claim 13, further comprising: and the detection device detects that the first grinding pad stops grinding when the grinding fluid collected by the collection device is insufficient.
16. The machine station of claim 12, further comprising:
a first nozzle connected to the first polishing pad;
the first nozzle is used for spraying the residual grinding fluid after the second grinding pad is ground to the surface of the first grinding pad and/or the wafer.
17. A method of grinding, comprising:
polishing the edge of the wafer by using the first polishing pad of the machine of any one of claims 1 to 11 or the machine of any one of claims 12 to 16;
and carrying out chemical mechanical polishing on the wafer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117718821A (en) * | 2024-02-07 | 2024-03-19 | 华海清科股份有限公司 | Wafer grinding post-processing system, device and method and wafer thinning equipment |
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