CN201998046U - Chemical mechanical polishing device - Google Patents

Chemical mechanical polishing device Download PDF

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Publication number
CN201998046U
CN201998046U CN2010206741724U CN201020674172U CN201998046U CN 201998046 U CN201998046 U CN 201998046U CN 2010206741724 U CN2010206741724 U CN 2010206741724U CN 201020674172 U CN201020674172 U CN 201020674172U CN 201998046 U CN201998046 U CN 201998046U
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China
Prior art keywords
grinding
grinding pad
mechanical
chemical
pad
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Expired - Lifetime
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CN2010206741724U
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Chinese (zh)
Inventor
蒋莉
黎铭琦
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Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The utility model provides a chemical mechanical polishing device for polishing a wafer. The device comprises at least one rotary table, wherein the wafer is fixedly disposed over the rotary table; a conditioner; a polishing pad, wherein the polishing surface faces downward; a polishing head; a mechanical arm; and a polishing pad replacing device which comprises a waste polishing pad collection device and a new polishing pad supply device. According to the chemical mechanical polishing device of the utility model, during the process of polishing, the polishing pad is held by the mechanical arm to be moved above the wafer for polishing; the polishing pad is moved by the mechanical arm to the conditioner for conditioning; and when service life of the polishing pad is over, the polishing pad is moved by the mechanical arm to the polishing pad replacing device for automatic replacement of the polishing pad without man-powered operation, thereby improving work efficiency.

Description

A kind of chemical-mechanical grinding device
Technical field
The utility model relates to a kind of semiconductor technology manufacturing equipment, relates in particular to a kind of chemical-mechanical grinding device.
Background technology
Along with the size of semiconductor element feature is contracted to the scope of deep-sub-micrometer gradually, in order to ensure the reliability of element, when making integrated circuit or other electronic installations, providing extremely, smooth wafer surface or substrate surface is crucial.
In semiconductor technology, chemical mechanical milling method (Chemical Mechanical Polishing, CMP, chemical mechanical polishing method) is the technology of the normal comprehensive planarization of using now.Generally speaking, in the process of chemically mechanical polishing, be to contain under the situation of grinding slurry (Slurry) of chemical assistant (Reagent) and abrasive grains in supply, wafer fixed surface to be ground on the grinding pad that rotating speed is controlled, is reached the purpose of planarization by the relative motion between wafer and the grinding pad.In other words, when wafer rotated on grinding pad in the mode of pushing, the abrasive grains in wafer surface and the slurry can contact with each other and produce friction, so can make wafer surface produce consume, and make its surface smooth gradually.
Yet polishing pad belongs to consumable accessory (Consumable Parts), after the CMP process that carries out a period of time, and the smoothing (Glazing) that can become of the surface of grinding pad, and have residual particles on the grinding pad easily and pile up and assemble.These particles have plenty of from the abrasive grains in the slurry, and what have then may be from the byproduct that thin-film material generated (By-Product) that is removed on the wafer surface.The polishing pad that is in the smoothing state can not keep polish abrasive, thereby can significantly reduce polishing speed.Therefore; prior art is in order to ensure the quality of CMP process; must when grinding, use trimmer (Conditioner) to make grinding pad reply suitable roughness; to keep grinding rate and the stability of grinding pad to wafer; trimmer comprises the diamond lap particle; in the dressing process, the diamond lap particle easily comes off, and drops down onto the scuffing that causes wafer on the grinding pad.
In the prior art, the grasping silicon wafer of grinding head described in the chemical-mechanical grinding device grinds on the grinding pad that is positioned at above the turntable, there is trimmer that grinding pad is repaired on the grinding pad simultaneously, along with the size of wafer is increasing, wafer is accomplished 18 inches, 24 inches even bigger, and then the size of grinding pad need be accomplished 45 inches, 60 inches even bigger, and then not only the grinding pad manufacture difficulty strengthens, and spoilage improves, and cost improves constantly.
After grinding pad arrives service life, need to change grinding pad, proceed grinding work, prior art is manually to unload old grinding pad by the people, and new grinding pad is installed, and greatly reduces operating efficiency.
The utility model content
The technical problems to be solved in the utility model is a kind of grinding pad moderate dimensions to be provided, can to reduce the chemical-mechanical grinding device that wafer scratches and can reduce the replacing grinding pad operating time.
The utility model provides a kind of chemical-mechanical grinding device, comprises pedestal, also comprises turntable, trimmer, grinding pad, grinding head, mechanical arm and the grinding pad changing device more that is arranged at described pedestal top, wherein:
Described turntable upper fixed is placed described wafer, and the to be ground of described wafer faces up;
Described trimmer is positioned at by the described turntable;
The abradant surface of described grinding pad down;
Described grinding pad is fixed in the below of described grinding head, can drive described grinding pad rotation;
Described grinding head is fixed by the arm subordinate side of described mechanical arm, can drive described grinding pad and move; And
Described grinding pad more changing device is positioned at by the described turntable, comprises waste and old grinding pad gathering-device and new grinding pad feeding mechanism.
Further, described chemical-mechanical grinding device comprises a plurality of turntables.
Further, described grinding pad is circular, and size less than, equal the size of described wafer.
Further, also be provided with pressure-regulating device between described mechanical arm and the described grinding head.
Further, described pressure-regulating device comprises the compressed air shower nozzle and is arranged at pressure-regulating valve on the described compressed air shower nozzle.
Further, place new grinding pad in the described new grinding feeding mechanism, in described new grinding pad feeding mechanism, be provided with the deionized water shower nozzle, the described new grinding pad of water spraying direction subtend.
Further, described turntable top also is provided with cleaning device, comprises deionized water jet pipe and lapping liquid jet pipe.
In sum, chemical-mechanical grinding device described in the utility model, in chemical mechanical planarization process, described mechanical arm grips described grinding pad and moves to described wafer top, and described wafer is ground, thereby the particle of slurry can residually not accumulate on the grinding pad when grinding, help keeping the grinding pad roughness, improve grinding rate, and prolong the service time of grinding pad, reduce grinding pad and change number of times, increase work efficiency; After grinding a period of time, mechanical arm drives described grinding pad and moves to trimmer and repair, in dressing process, described trimmer is positioned at described grinding pad below, avoid repairing residual impurity and chemical residual liquid remains on the grinding pad, prevent that then the finishing residual impurity causes scratch to wafer in follow-up use; When grinding pad finished service life, mechanical arm drove described grinding pad and moves to more changing device of grinding pad, earlier old grinding pad was positioned in the waste and old grinding pad, from new grinding pad feeding mechanism, grasp new grinding pad again, realize changing automatically grinding pad, need not manual operation, increase work efficiency.
And then chemical-mechanical grinding device comprises a plurality of turntables, can grind a plurality of wafers simultaneously, thereby improves grinding efficiency, or realizes that same wafer finishes the support of using different lapping liquids on different turntables, improves the effect of grinding processing procedure; The size of described grinding pad less than, equal wafer, the trend that can cooperate wafer size constantly to increase is convenient to make grinding pad, saves cost of manufacture.
Description of drawings
Fig. 1 is the structural representation of chemical-mechanical grinding device among the utility model one embodiment.
Fig. 2 is the partial structurtes vertical view of chemical-mechanical grinding device described in the utility model one embodiment in process of lapping.
Fig. 3 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in process of lapping.
Fig. 4 is the partial structurtes vertical view of chemical-mechanical grinding device described in the utility model one embodiment in dressing process.
Fig. 5 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in dressing process.
Fig. 6 is the partial structurtes vertical view of chemical-mechanical grinding device described in the utility model one embodiment in changing the grinding pad process.
Fig. 7~Fig. 8 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in changing the grinding pad process.
The specific embodiment
For making content of the present utility model clear more understandable,, content of the present utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in the protection domain of the present utility model.
Secondly, the utility model utilizes schematic diagram to carry out detailed statement, and when the utility model example was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as to qualification of the present utility model.
Fig. 1 is the structural representation of chemical-mechanical grinding device among the utility model one embodiment.As shown in Figure 1, the utility model provides a kind of chemical-mechanical grinding device, comprises pedestal 100 and the turntable 101 that is arranged at described pedestal top, trimmer 109, and grinding pad 103, grinding head 105 and grinding pad be changing device more.
Wherein, described turntable 101 comprises at least one, and its upper fixed is placed described wafer 200, and the to be ground of described wafer 200 faces up; Further, described chemical-mechanical grinding device comprises a plurality of turntables, for example is three turntables as shown in Figure 1 in the present embodiment.A plurality of turntables 101 are set, can grind a plurality of wafers 200 simultaneously, thereby improve grinding efficiency, or realize that same wafer 200 on different turntables, uses different lapping liquids to grind, improve the effect of process of lapping.Further, described turntable top also is provided with cleaning device, comprises deionized water jet pipe and lapping liquid jet pipe.
Described trimmer 109 is positioned at described turntable 101 sides; Further, described trimmer comprises diamond lap particle and water injector.
The abradant surface of described grinding pad 103 down; Further, described grinding pad 103 is circular, and size less than, equal the size of described wafer 200.The size of described grinding pad less than, equal wafer, the trend that can cooperate wafer size constantly to increase is convenient to make grinding pad, saves cost of manufacture.The grinding pad 103 of other shapes is also in thought range of the present utility model in addition.
Described grinding pad 103 is fixed in the below of described grinding head 105, can drive described grinding pad 103 rotations;
Described grinding head 105 is fixed by the arm subordinate side of described mechanical arm 107, can drive described grinding pad 103 and move;
Described grinding pad is changing device more, is positioned at by the described turntable, comprises waste and old grinding pad gathering-device 111 and new grinding pad 113 feeding mechanisms.
Fig. 2 is the partial structurtes vertical view of chemical-mechanical grinding device described in the utility model one embodiment in process of lapping, and Fig. 3 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in process of lapping.Please in conjunction with Fig. 2 and shown in Figure 3, in process of lapping, mechanical arm 107 grasps the fixing grinding pad 103 of described grinding head 105 and grinding head 105 belows, and grinding pad 103 is moved to wafer 200 tops grind, the direction of rotation of grinding pad 103 and wafer 200, in the process of lapping, described grinding pad 103 is positioned at wafer 200 tops, the particle of lapping liquid can residually not accumulated on the grinding pad, thereby help keeping the grinding pad roughness, improve grinding rate, prolong the service time of grinding pad, reduce grinding pad and change number of times, increase work efficiency.Wherein the arm hand 108 of mechanical arm grasps grinding head 105, between mechanical arm 107 and the grinding head 105 pressure-regulating device 110 is set also.Described pressure-regulating device 110 comprises the compressed air shower nozzle and is arranged at pressure-regulating valve on the described compressed air shower nozzle (indicating among the figure), in process of lapping, by regulating pressure-regulating device 110, the pressure between grinding pad 103 and the wafer 200 be can improve, grinding effect and the speed preset obtained.
Fig. 4 is the partial structurtes vertical view of chemical-mechanical grinding device described in the utility model one embodiment in dressing process.Fig. 5 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in dressing process.Please in conjunction with Fig. 4 and shown in Figure 5; grinding pad 103 is being carried out in the dressing process; mechanical arm 107 grasps the fixing grinding pad 103 of described grinding head 105 and grinding head below; and grinding pad 103 is moved to trimmer 109 tops grind; described trimmer 109 can comprise diamond lap particle or the organic synthesis material that is used to repair, and water injector 112.In dressing process, described trimmer 109 is positioned at described grinding pad 103 belows, avoid repairing diamond lap particle that comes off on particle that residual impurity comprises that grinding pad 103 grinds away and the trimmer 109 etc., and the liquid that can not of water injector 112 ejection remains on the grinding pad 103, reduces the finishing residual impurity then and in follow-up process of lapping wafer 200 caused scratch.
Fig. 6 is the partial structurtes vertical view of chemical-mechanical grinding device described in the utility model one embodiment in changing the grinding pad process.Fig. 7~Fig. 8 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in changing the grinding pad process.Please in conjunction with Fig. 6 and Fig. 7~shown in Figure 8, when grinding pad finishes for 103 service lifes, mechanical arm 107 drives described grinding pad 103 and moves to more changing device 111 of grinding pad, earlier old grinding pad 103a is positioned in the waste and old lapping device 111, from new grinding pad feeding mechanism 113, grasp new grinding pad 103b again, realize changing automatically grinding pad, need not manual operation, increase work efficiency.Further, place new grinding pad 103b in the described new grinding feeding mechanism 113, in described new grinding pad feeding mechanism, be provided with deionized water shower nozzle 114, the described new grinding pad 103b of water spraying direction subtend.Deionized water water spray guarantees that new grinding pad 103b keeps moistening constantly, reduces when grinding with wafer 200 scuffing to wafer 200.
In sum, chemical-mechanical grinding device described in the utility model, in chemical mechanical planarization process, described mechanical arm grips described grinding pad and moves to described wafer top, and described wafer is ground, thereby the particle of slurry can residually not accumulate on the grinding pad when grinding, help keeping the grinding pad roughness, improve grinding rate, and prolong the service time of grinding pad, reduce grinding pad and change number of times, increase work efficiency; After grinding a period of time, mechanical arm drives described grinding pad and moves to trimmer and repair, in dressing process, described trimmer is positioned at described grinding pad below, so the liquid that can not of abrasive grains and ejection remains on the grinding pad, thereby reduce in the follow-up use grinding pad to the grinding wafer scratch; When grinding pad finished service life, mechanical arm drove described grinding pad and moves to more changing device of grinding pad, earlier old grinding pad was positioned in the waste and old grinding pad, from new grinding pad feeding mechanism, grasp new grinding pad again, realize changing automatically grinding pad, need not manual operation, increase work efficiency.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection domain of the present utility model is as the criterion when looking claims person of defining.

Claims (7)

1. a chemical-mechanical grinding device is used to grind wafer, comprises pedestal, it is characterized in that, also comprises turntable, trimmer, grinding pad, grinding head, mechanical arm and the grinding pad changing device more that is arranged at described pedestal top, wherein:
Described turntable upper fixed is placed described wafer, and the to be ground of described wafer faces up;
Described trimmer is positioned at by the described turntable;
The abradant surface of described grinding pad down;
Described grinding pad is fixed in the below of described grinding head, can drive described grinding pad rotation;
Described grinding head is fixed by the arm subordinate side of described mechanical arm, can drive described grinding pad and move; And
Described grinding pad more changing device is positioned at by the described turntable, comprises waste and old grinding pad gathering-device and new grinding pad feeding mechanism.
2. chemical-mechanical grinding device as claimed in claim 1 is characterized in that described chemical-mechanical grinding device comprises a plurality of turntables.
3. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, described grinding pad is circular, and size less than, equal the size of described wafer.
4. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, also is provided with pressure-regulating device between described mechanical arm and the described grinding head.
5. chemical-mechanical grinding device as claimed in claim 4 is characterized in that, described pressure-regulating device comprises the compressed air shower nozzle and is arranged at pressure-regulating valve on the described compressed air shower nozzle.
6. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, places new grinding pad in the described new grinding feeding mechanism, is provided with the deionized water shower nozzle in described new grinding pad feeding mechanism, the described new grinding pad of water spraying direction subtend.
7. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, described turntable top also is provided with cleaning device, comprises deionized water jet pipe and lapping liquid jet pipe.
CN2010206741724U 2010-12-21 2010-12-21 Chemical mechanical polishing device Expired - Lifetime CN201998046U (en)

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Application Number Priority Date Filing Date Title
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103144040A (en) * 2013-03-15 2013-06-12 上海华力微电子有限公司 Chemical mechanical polishing equipment
CN104742008A (en) * 2013-12-27 2015-07-01 中芯国际集成电路制造(上海)有限公司 Chemical mechanical grinding method and chemical mechanical grinding device
CN109311136A (en) * 2016-04-04 2019-02-05 菲尔罗伯蒂克斯顺从式机器人技术有限公司 For replacing the change station of abrading article automatically
CN112440203A (en) * 2019-09-03 2021-03-05 芯恩(青岛)集成电路有限公司 Wafer grinding system and wafer grinding method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103144040A (en) * 2013-03-15 2013-06-12 上海华力微电子有限公司 Chemical mechanical polishing equipment
CN104742008A (en) * 2013-12-27 2015-07-01 中芯国际集成电路制造(上海)有限公司 Chemical mechanical grinding method and chemical mechanical grinding device
CN104742008B (en) * 2013-12-27 2017-03-22 中芯国际集成电路制造(上海)有限公司 Chemical mechanical grinding method and chemical mechanical grinding device
CN109311136A (en) * 2016-04-04 2019-02-05 菲尔罗伯蒂克斯顺从式机器人技术有限公司 For replacing the change station of abrading article automatically
CN112440203A (en) * 2019-09-03 2021-03-05 芯恩(青岛)集成电路有限公司 Wafer grinding system and wafer grinding method
CN112440203B (en) * 2019-09-03 2022-04-05 芯恩(青岛)集成电路有限公司 Wafer grinding system and wafer grinding method

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GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING

Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

Effective date: 20130326

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING

TR01 Transfer of patent right

Effective date of registration: 20130326

Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing

Patentee after: Semiconductor Manufacturing International (Beijing) Corporation

Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18

Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation

CX01 Expiry of patent term

Granted publication date: 20111005

CX01 Expiry of patent term