CN203887686U - Polishing head cleaning device and chemical mechanical polishing equipment - Google Patents
Polishing head cleaning device and chemical mechanical polishing equipment Download PDFInfo
- Publication number
- CN203887686U CN203887686U CN201420276003.3U CN201420276003U CN203887686U CN 203887686 U CN203887686 U CN 203887686U CN 201420276003 U CN201420276003 U CN 201420276003U CN 203887686 U CN203887686 U CN 203887686U
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- China
- Prior art keywords
- grinding head
- grinding
- cleaning device
- head cleaning
- atomizer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000004140 cleaning Methods 0.000 title claims abstract description 95
- 238000005498 polishing Methods 0.000 title abstract description 19
- 239000000126 substance Substances 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000012530 fluid Substances 0.000 claims abstract description 26
- 238000000227 grinding Methods 0.000 claims description 239
- 238000002347 injection Methods 0.000 claims description 21
- 239000007924 injection Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 10
- 239000002245 particle Substances 0.000 abstract description 10
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 239000003595 mist Substances 0.000 abstract 3
- 239000007788 liquid Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005461 lubrication Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model provides a polishing head cleaning device and chemical mechanical polishing equipment. A baffle is arranged above a polishing head. The polishing head cleaning device comprises a polishing head cleaning and silicon wafer loading and unloading unit and an atomizer. The polishing head cleaning and silicon wafer loading and unloading unit is provided with multiple first nozzles and ejects polishing head cleaning fluid through the first nozzles, and the ejection direction of the polishing head cleaning fluid aligns to the polishing head. The atomizer is provided with at least one nozzle and ejects mist through the nozzles, and the ejection direction of the mist aligns to the baffle. According to the polishing head cleaning device and the chemical mechanical polishing equipment, the atomizer is added to the polishing head cleaning device and can eject the mist to increase humidity in the polishing head cleaning process, so that polishing fluid remaining on the baffle of the chemical mechanical polishing equipment is prevented from crystallization, and further particles are avoided.
Description
Technical field
The utility model relates to cmp technical field, particularly a kind of grinding head cleaning device and the chemical-mechanical grinding device that comprises described grinding head cleaning device.
Background technology
Cmp (chemical mechanical polishing, be called for short CMP) be one by chemical reaction process and the coefficient technique of mechanical lapping process, can remove the film of crystal column surface by cmp, reach the object of wafer planarization, be therefore widely used in the manufacture of semiconductor crystal wafer.
Please refer to Fig. 1, the structural representation of its chemical-mechanical grinding device that is prior art.As shown in Figure 1, existing chemical-mechanical grinding device 100 comprises lapping device 110, and described lapping device 110 comprises grinding pad 111 and grinding head 112, and described grinding head 112 can shift position.While carrying out cmp, wafer 101 is fixed on grinding head 112, grinding head 112 applies certain pressure and makes wafer 101 be close to grinding pad 111, and simultaneous grinding head 112 drives wafer 101 and grinding pad 111 rotating Vortexes, makes wafer 101 and grinding pad 111 produce mechanical friction.Meanwhile, lapping liquid flows on grinding pad 111 by polishing liquid feeding pipe, plays lubrication in process of lapping, and with ground wafer 101, suitable chemical reaction occurs, and improves grinding rate.Directly fall grinding pad 111 and affect Grinding Quality in order to prevent the particle (Particle) of grinding pad 111 tops, the top of grinding head 112 is provided with a baffle plate 113 conventionally, described baffle plate 113 is fixing with grinding head 112, and the lower surface of described baffle plate 113 faces grinding pad 111.
Please continue to refer to Fig. 1, existing chemical-mechanical grinding device 100 also comprises grinding pad cleaning device (not shown) and grinding head cleaning device 120, after finishing, grinding by grinding pad cleaning device, described grinding pad 111 is cleaned, now grinding head 112 and baffle plate 113 are still positioned at the top of described grinding pad 111, after grinding pad cleans and finishes, grinding head cleaning is carried out in the top that described grinding head 112 moves to described grinding head cleaning device 120 with baffle plate 113.Current described grinding head cleaning device 120 is general adopts grinding head to clean and silicon chip handling unit (Head Clean Load/Unload is called for short HCLU).Described grinding pad cleaning device and grinding head cleaning device 120 all can inject high pressure water, and directive grinding pad 111 and grinding head 112 are to remove remaining lapping liquid respectively.
But, utilizing in the process of high pressure water washing grinding pad 111, part lapping liquid is splashed on the lower surface of baffle plate 113, if removing not in time, the residual lapping liquid of the lower surface of baffle plate 113 can produce crystallization, crystallization is very easy to drop and produces particle on grinding pad 111, and then causes wafer to scratch.
Base this, how to prevent that lapping liquid residual on the baffle plate of chemical-mechanical grinding device from producing crystallization, and then produce the problem that particle scratches wafer and become those skilled in the art's technical problem urgently to be resolved hurrily.
Utility model content
The purpose of this utility model is to provide a kind of grinding head cleaning device and chemical-mechanical grinding device to produce crystallization to solve lapping liquid residual on the baffle plate of chemical-mechanical grinding device in prior art, and then produces the problem of particle scuffing wafer.
For addressing the above problem, the utility model provides a kind of grinding head cleaning device, and described grinding head cleaning device comprises that grinding head cleans and silicon chip handling unit and atomizer; Described grinding head cleans and silicon chip handling unit has multiple the first nozzles, and described grinding head cleans and silicon chip handling unit goes out grinding head cleaning fluid by described multiple the first nozzle ejection, and the injection direction of described grinding head cleaning fluid is aimed at described grinding head; Described atomizer has at least one shower nozzle, and described atomizer ejects fog by described shower nozzle, and the injection direction of described fog is aimed at described baffle plate.
Optionally, in described grinding head cleaning device, described atomizer and described grinding head clean and the distance of silicon chip handling unit is less than 50cm.
Optionally, in described grinding head cleaning device, the lower surface of described baffle plate and the lower surface of described grinding head are parallel to each other.
Optionally, in described grinding head cleaning device, described grinding head cleans and silicon chip handling unit comprises the first pipeline, and described the first pipeline is connected with described multiple the first nozzles.
Optionally, in described grinding head cleaning device, the material that described atomizer adopts is macromolecular material.
The utility model also provides a kind of chemical-mechanical grinding device, and described chemical-mechanical grinding device comprises: lapping device and grinding head cleaning device as above; Described lapping device comprises grinding pad, grinding head and baffle plate, and described grinding head is positioned at the top of described grinding pad and grinding head cleaning device, and described baffle plate is arranged at the top of described grinding head and fixes with described grinding head; Described grinding head cleaning device comprises that grinding head cleans and silicon chip handling unit and atomizer; Described grinding head cleans and silicon chip handling unit has multiple the first nozzles, and described grinding head cleans and silicon chip handling unit goes out grinding head cleaning fluid by described multiple the first nozzle ejection, and the injection direction of described grinding head cleaning fluid is aimed at described grinding head; Described atomizer has at least one shower nozzle, and described atomizer ejects fog by described shower nozzle, and the injection direction of described fog is aimed at described baffle plate.
Optionally, in described chemical-mechanical grinding device, described atomizer and described grinding head clean and the distance of silicon chip handling unit is less than 50cm.
Optionally, in described chemical-mechanical grinding device, the lower surface of described baffle plate and the lower surface of described grinding head are parallel to each other.
Optionally, in described chemical-mechanical grinding device, described grinding head cleans and silicon chip handling unit comprises the first pipeline, and described the first pipeline is connected with described multiple the first nozzles.
Optionally, in described chemical-mechanical grinding device, the material that described atomizer adopts is macromolecular material.
Optionally, in described chemical-mechanical grinding device, also comprise grinding pad cleaning device; Described grinding pad cleaning device has second pipe and second nozzle multiple and that described second pipe is connected, and described grinding pad cleaning device ejects grinding pad cleaning fluid by described multiple second nozzles.
In the grinding head cleaning device and chemical-mechanical grinding device providing at the utility model, in described grinding head cleaning device, set up an atomizer, described atomizer can eject fog to increase humidity in grinding head cleaning process, prevent that lapping liquid residual on the baffle plate of described chemical-mechanical grinding device from producing crystalline polamer, and then avoid producing particle.
Brief description of the drawings
Fig. 1 is the structural representation of the chemical-mechanical grinding device of prior art;
Fig. 2 is the structural representation of the chemical-mechanical grinding device of the utility model embodiment.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, grinding head cleaning device and the chemical-mechanical grinding device that the utility model proposes are described in further detail.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of aid illustration the utility model embodiment lucidly.
Please refer to Fig. 2, it is the structural representation of the chemical-mechanical grinding device of the utility model embodiment.As shown in Figure 2, the top of described grinding head 212 is provided with a baffle plate 213, and described grinding head cleaning device 220 comprises that grinding head cleans and silicon chip handling unit 221 and atomizer 222; Described grinding head cleans and silicon chip handling unit 221 has multiple the first nozzles, described grinding head cleans and silicon chip handling unit 221 goes out grinding head cleaning fluid by described multiple the first nozzle ejection, and the injection direction of described grinding head cleaning fluid is aimed at described grinding head; Described atomizer 222 has at least one shower nozzle, and described atomizer 222 ejects fog by described shower nozzle, and the injection direction of described fog is aimed at described baffle plate 213.
Concrete, described atomizer 222 is connected with a water source, the deionized water that described water source can provide circulation to upgrade.Described atomizer 222 has at least one shower nozzle, and described atomizer 222 ejects fog by described shower nozzle.The fog being produced by deionized water can not affect the cleaning performance of described grinding head 212.In order to prevent sending out dirt, the material that described atomizer 222 adopts is macromolecular material.
Described grinding head cleans and silicon chip handling unit 221 comprises the first nozzle that the first pipeline is connected with multiple and described the first pipeline, described grinding head cleans and silicon chip handling unit 221 goes out grinding head cleaning fluid by described multiple the first nozzle ejection, described grinding head cleaning fluid is generally pure water, cleans by water under high pressure.
Wherein, the injection direction of the injection direction of described grinding head cleaning and silicon chip handling unit 221 and described atomizer 222 is aimed at respectively described grinding head 212 and baffle plate 213, the injection direction that is described grinding head cleaning fluid is aimed at described grinding head 212, and the injection direction of fog is aimed at described baffle plate 213.
Because baffle plate 213 is near grinding head 212, therefore described atomizer 212 is also close to described grinding head cleaning and silicon chip handling unit 211, and the particular location of atomizer 22 can regulate according to production technology.In preferred version, described atomizer 212 cleans with described grinding head and the distance of silicon chip handling unit 211 is less than 50cm.
In the present embodiment, because the lower surface of described grinding head 212 and the lower surface of described baffle plate 213 are parallel to each other and are all positioned at that described grinding head cleans and the top of silicon chip handling unit 221 and atomizer 222, therefore the injection direction of described atomizer 222 clean with described grinding head and silicon chip handling unit 221 consistent, by lower and on spray.
Accordingly, the utility model also provides a kind of chemical-mechanical grinding device.Please continue to refer to Fig. 2, described chemical-mechanical grinding device 200 comprises: lapping device 210 and grinding head cleaning device 220 as above; Described lapping device 210 comprises grinding pad 211, grinding head 212 and baffle plate 213, described grinding head 212 is positioned at the top of described grinding pad 211 and grinding head cleaning device 220, described baffle plate 213 is arranged at the top of described grinding head 212 fixing with described grinding head 212, wherein, described grinding head cleaning device 220 comprises that grinding head cleans and silicon chip handling unit 221 and atomizer 222; Described grinding head cleans and silicon chip handling unit 221 has multiple the first nozzles, described grinding head cleans and silicon chip handling unit 221 goes out grinding head cleaning fluid by described multiple the first nozzle ejection, and the injection direction of described grinding head cleaning fluid is aimed at 212 of described grindings; Described atomizer 222 has at least one shower nozzle, and described atomizer 222 ejects fog by described shower nozzle, and the injection direction of described fog is aimed at described baffle plate 213.
Concrete, described grinding head 212 can load wafer and drive wafer and described grinding pad 211 rotating Vortexes, and described grinding head 212 of while can shift position, can move to the top of described grinding pad 211 and the top of grinding head cleaning device 220.
The top of described grinding head 212 is also provided with baffle plate 213, and described baffle plate 213 is fixing with described grinding head 212, and described baffle plate 213 can be avoided the particle of grinding pad 211 tops directly to drop on described grinding pad 211 and cause product defects.Common, the lower surface of described grinding head 212 and baffle plate 213 all regards to the upper surface of described grinding pad 211 and is parallel to each other.
Described chemical-mechanical grinding device 200 also comprises grinding pad cleaning device (not shown), described grinding pad cleaning device comprises second pipe and multiple second nozzles that are connected with second pipe, and described grinding pad cleaning device ejects grinding pad cleaning fluid to remove the lapping liquid on described grinding pad 211 by described multiple second nozzles.Wherein, described grinding pad cleaning fluid and grinding head cleaning fluid are pure water, clean by water under high pressure.
Wherein, grinding head cleaning device 220 have multiple can a jet grinding cleaning fluid the first nozzle and at least one can spray the shower nozzle of fog, the injection direction of described fog is identical with the injection direction of described grinding head cleaning fluid, all perpendicular to the lower surface of described grinding head 212 and baffle plate 213, wherein, the injection direction of described fog is aimed at described baffle plate 213, and the injection direction of described grinding head cleaning fluid is aimed at and grinding head 212.
As shown in Figure 2, while carrying out cmp, wafer 201 is fixed on described grinding head 212, described grinding head 212 applies certain pressure and makes described wafer 201 be close to described grinding pad 211, described grinding head 212 drives wafer 201 and described grinding pad 211 rotating Vortexes simultaneously, makes described wafer 201 produce mechanical friction with described grinding pad 211.Meanwhile, lapping liquid flows on grinding pad 211 by pipeline, plays lubrication in process of lapping, and with ground wafer 201, suitable chemical reaction occurs, and improves grinding rate.
After grinding finishes, described chemical-mechanical grinding device 200 cleans to remove remaining lapping liquid by grinding pad cleaning device to described grinding pad 211, now grinding head 212 and baffle plate 213 are still positioned at the top of described grinding pad 211, and in grinding pad cleaning process, part lapping liquid splashes the lower surface of baffle plate 213.
After grinding pad cleans and finishes, grinding head cleaning is carried out in the top that described grinding head 212 moves to described grinding head cleaning device 220 with baffle plate 213, and described grinding head cleaning device 220 is general adopts grinding head to clean and silicon chip handling unit.In grinding head cleaning process, the atomizer 222 of grinding head cleaning device 220 constantly ejects fog to increase humidity, avoids lapping liquid residual on baffle plate 213 to occur crystalline polamer.
As fully visible, in the grinding head cleaning device and chemical-mechanical grinding device providing at the utility model embodiment, in described grinding head cleaning device, set up an atomizer, described atomizer ejects fog to increase humidity in grinding head cleaning process, prevent that lapping liquid residual on the baffle plate of described chemical-mechanical grinding device from producing crystalline polamer, and then avoid producing particle scratch wafer, simultaneously, because described atomizer adopts macromolecular material and adopts deionized water as the water source that produces fog, can not produce new particle and affect the quality of cmp.
Foregoing description is only the description to the utility model preferred embodiment; the not any restriction to the utility model scope; any change, modification that the those of ordinary skill in the utility model field does according to above-mentioned disclosure, all belong to the protection domain of claims.
Claims (11)
1. a grinding head cleaning device, the top of described grinding head is provided with a baffle plate, it is characterized in that, and described grinding head cleaning device comprises that grinding head cleans and silicon chip handling unit and atomizer; Described grinding head cleans and silicon chip handling unit has multiple the first nozzles, and described grinding head cleans and silicon chip handling unit goes out grinding head cleaning fluid by described multiple the first nozzle ejection, and the injection direction of described grinding head cleaning fluid is aimed at described grinding head; Described atomizer has at least one shower nozzle, and described atomizer ejects fog by described shower nozzle, and the injection direction of described fog is aimed at described baffle plate.
2. grinding head cleaning device as claimed in claim 1, is characterized in that, described atomizer and described grinding head clean and the distance of silicon chip handling unit is less than 50cm.
3. grinding head cleaning device as claimed in claim 1, is characterized in that, the lower surface of described baffle plate and the lower surface of described grinding head are parallel to each other.
4. grinding head cleaning device as claimed in claim 1, is characterized in that, described grinding head cleans and silicon chip handling unit also comprises the first pipeline, and described the first pipeline is connected with described multiple the first nozzles.
5. grinding head cleaning device as claimed in claim 1, is characterized in that, the material that described atomizer adopts is macromolecular material.
6. a chemical-mechanical grinding device, comprise lapping device and grinding head cleaning device, described lapping device comprises grinding pad, grinding head and baffle plate, described grinding head is positioned at the top of described grinding pad and grinding head cleaning device, described baffle plate is arranged at the top of described grinding head and fixes with described grinding head, it is characterized in that, described grinding head cleaning device comprises that grinding head cleans and silicon chip handling unit and atomizer; Described grinding head cleans and silicon chip handling unit has multiple the first nozzles, and described grinding head cleans and silicon chip handling unit goes out grinding head cleaning fluid by described multiple the first nozzle ejection, and the injection direction of described grinding head cleaning fluid is aimed at described grinding head; Described atomizer has at least one shower nozzle, and described atomizer ejects fog by described shower nozzle, and the injection direction of described fog is aimed at described baffle plate.
7. chemical-mechanical grinding device as claimed in claim 6, is characterized in that, described atomizer and described grinding head clean and the distance of silicon chip handling unit is less than 50cm.
8. chemical-mechanical grinding device as claimed in claim 6, is characterized in that, the lower surface of described baffle plate and the lower surface of described grinding head are parallel to each other.
9. chemical-mechanical grinding device as claimed in claim 6, is characterized in that, described grinding head cleans and silicon chip handling unit also comprises the first pipeline, and described the first pipeline is connected with described multiple the first nozzles.
10. chemical-mechanical grinding device as claimed in claim 6, is characterized in that, the material that described atomizer adopts is macromolecular material.
11. chemical-mechanical grinding devices as claimed in claim 6, is characterized in that, also comprise grinding pad cleaning device; Described grinding pad cleaning device has second pipe and second nozzle multiple and that described second pipe is connected, and described grinding pad cleaning device ejects grinding pad cleaning fluid by described multiple second nozzles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420276003.3U CN203887686U (en) | 2014-05-27 | 2014-05-27 | Polishing head cleaning device and chemical mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420276003.3U CN203887686U (en) | 2014-05-27 | 2014-05-27 | Polishing head cleaning device and chemical mechanical polishing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203887686U true CN203887686U (en) | 2014-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420276003.3U Expired - Lifetime CN203887686U (en) | 2014-05-27 | 2014-05-27 | Polishing head cleaning device and chemical mechanical polishing equipment |
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| Country | Link |
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| CN (1) | CN203887686U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106272037A (en) * | 2015-05-18 | 2017-01-04 | 盛美半导体设备（上海）有限公司 | chemical mechanical polishing device and method |
| CN107717713A (en) * | 2016-08-12 | 2018-02-23 | 三星显示有限公司 | Substrate polish system and substrate polishing method |
| CN109277940A (en) * | 2017-07-20 | 2019-01-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of chemical mechanical polishing device and chemical and mechanical grinding method |
-
2014
- 2014-05-27 CN CN201420276003.3U patent/CN203887686U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106272037A (en) * | 2015-05-18 | 2017-01-04 | 盛美半导体设备（上海）有限公司 | chemical mechanical polishing device and method |
| CN107717713A (en) * | 2016-08-12 | 2018-02-23 | 三星显示有限公司 | Substrate polish system and substrate polishing method |
| US11148247B2 (en) | 2016-08-12 | 2021-10-19 | Samsung Display Co., Ltd. | Substrate polishing system and substrate polishing method |
| CN109277940A (en) * | 2017-07-20 | 2019-01-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of chemical mechanical polishing device and chemical and mechanical grinding method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141022 |