CN201913543U - Chemical mechanical polishing equipment - Google Patents
Chemical mechanical polishing equipment Download PDFInfo
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- CN201913543U CN201913543U CN2010206736406U CN201020673640U CN201913543U CN 201913543 U CN201913543 U CN 201913543U CN 2010206736406 U CN2010206736406 U CN 2010206736406U CN 201020673640 U CN201020673640 U CN 201020673640U CN 201913543 U CN201913543 U CN 201913543U
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Abstract
The utility model provides chemical mechanical polishing equipment which is used for polishing a wafer. The chemical mechanical polishing equipment comprises a turntable, a polishing pad, a polishing head and polishing liquid supplying pipes, wherein the wafer is fixedly arranged above the turntable, and the surface of the wafer, which is to be polished, faces up; the polishing surface of the polishing pad faces downwards; the polishing pad is fixed below the polishing head, and the polishing head can drive the polishing pad to rotate; and the polishing liquid supplying pipes are arranged on the polishing head or the polishing pad. In the polishing process of the chemical mechanical polishing equipment, the polishing pad is positioned above the wafer, and the polishing liquid supplying pipes are arranged on the polishing head or the polishing pad, so as to ensure that polishing liquid can directly and adequately fall on the upper part of the wafer, increase the utilization ratio of the polishing liquid, and improve the evenness and the consistency of the wafer.
Description
Technical field
The utility model relates to a kind of semiconductor technology manufacturing equipment, relates in particular to a kind of chemical-mechanical grinding device.
Background technology
Along with the size of semiconductor element feature is contracted to the scope of deep-sub-micrometer gradually, in order to ensure the reliability of element, when making integrated circuit or other electronic installations, providing extremely, smooth wafer surface or substrate surface is crucial.
In semiconductor technology, chemical mechanical milling method (Chemical Mechanical Polishing, CMP, chemical mechanical polishing method) is the technology of the normal comprehensive planarization of using now.Generally speaking, in the process of chemically mechanical polishing, be to contain under the situation of lapping liquid (Slurry) of chemical assistant (Reagent) and abrasive grains in supply, wafer fixed surface to be ground on the grinding pad that rotating speed is controlled, is reached the purpose of planarization by the relative motion between wafer and the grinding pad.In other words, when wafer rotated on grinding pad in the mode of pushing, the abrasive grains in wafer surface and the lapping liquid can contact with each other and produce friction, so can make wafer surface produce consume, and make its surface smooth gradually.
Yet, in the prior art, the grasping silicon wafer of grinding head described in the chemical-mechanical grinding device grinds on grinding pad, there is trimmer that grinding pad is repaired on the grinding pad simultaneously, above wafer, be provided with the lapping liquid supply pipe, in process of lapping, drop on the grinding pad, and, reach the better grinding effect along with relatively rotating of wafer and grinding pad flow between wafer and the grinding pad.Yet along with the size of wafer increases, wafer is accomplished 18 inches, 24 inches even bigger, correspondingly, the size of grinding pad need cooperate accomplishes 45 inches, 60 inches even bigger, then not only the grinding pad manufacture difficulty strengthens, and the grinding pad spoilage is improved, and cost constantly increases; And because size increases, be difficult to evenly distribute rapidly all crystal column surfaces after lapping liquid is dropped on the grinding pad, cause the waste of lapping liquid, and influence the uniformity and the uniformity of grinding wafer.
Than outside, polishing pad belongs to consumable accessory (Consumable Parts), after the CMP process that carries out a period of time, the surface of the grinding pad smoothing (Glazing) that can become, and have residual particles on the grinding pad easily and pile up and assemble.These particles have plenty of from the abrasive grains in the lapping liquid, and what have then may be from the byproduct that thin-film material generated (By-Product) that is removed on the wafer surface.The polishing pad that is in the smoothing state can not keep polish abrasive, thereby can significantly reduce polishing speed.Therefore; prior art is in order to ensure the quality of CMP process; must when grinding, use trimmer (Conditioner) to make grinding pad reply suitable roughness; to keep grinding rate and the stability of grinding pad to wafer; trimmer comprises the diamond lap particle; in the dressing process, the diamond lap particle easily comes off, and drops down onto the scuffing that causes wafer on the grinding pad.
The utility model content
The technical problems to be solved in the utility model is that a kind of uniformity and inhomogeneity chemical-mechanical grinding device that can make full use of lapping liquid and improve grinding wafer is provided.
For solving the problems of the technologies described above, the utility model provides a kind of chemical-mechanical grinding device, is used to grind wafer, comprising: turntable, and its upper fixed is placed described wafer, and the to be ground of described wafer faces up; Grinding pad, its abradant surface is down; Grinding head, the fixing described grinding pad in its below can drive described grinding pad rotation; The lapping liquid supply pipe is arranged on grinding head or the grinding pad.
Further, described lapping liquid supply pipe comprises a plurality of pipelines, evenly is arranged on the described grinding pad.
Further, described lapping liquid supply pipe comprises a plurality of pipelines, and described lapping liquid supply pipe is arranged on the grinding head in the described grinding pad outside.
Further, the diameter of described lapping liquid supply pipe is 1mm～3cm.
Further, the flow of described lapping liquid supply pipe is 50ml/min～800ml/min.
Further, described grinding pad is circular, and size less than, equal the size of described wafer.
Further, also comprise trimmer, be positioned at by the described turntable; Mechanical arm, described grinding head is fixed by its arm subordinate side, can drive described grinding pad and move; Grinding pad is changing device more, is positioned at by the described turntable, comprises waste and old grinding pad gathering-device and new grinding pad feeding mechanism; Cleaning device is arranged at described turntable top, comprises deionized water jet pipe and lapping liquid jet pipe.
Further, also be provided with pressure-regulating device between described mechanical arm and the described grinding head, described pressure-regulating device comprises the compressed air shower nozzle and is arranged at pressure-regulating valve on the described compressed air shower nozzle.
Further, place new grinding pad in the described new grinding feeding mechanism, in described new grinding pad feeding mechanism, be provided with the deionized water shower nozzle, the described new grinding pad of water spraying direction subtend.
In sum, the supply pipe of lapping liquid described in the utility model is arranged on described grinding head or the grinding pad, and in process of lapping, lapping liquid can directly flow on the wafer fully, thereby the uniformity and the uniformity that in process of lapping, keep wafer, and the grinding efficiency of raising wafer.Further the lapping liquid supply pipe comprises a plurality of pipelines, is arranged at equably on grinding pad or the grinding head, and lapping liquid is distributed on the wafer equably, and the amount of the zone that can grind as required adjustment lapping liquid, thereby improves the Grinding Quality of wafer.
Further, in the process of lapping, described grinding pad is positioned at the wafer top, the particle of slurry can residually not accumulated on the grinding pad, thereby help keeping the grinding pad roughness, improve grinding rate, prolong the service time of grinding pad, reduce grinding pad and change number of times, increase work efficiency.
Further, carry out in the dressing process at grinding pad, described trimmer is positioned at described grinding pad below, avoids repairing residual impurity and chemical residual liquid remains on the grinding pad, and the finishing residual impurity causes scratch to wafer in follow-up use then.
Further, when grinding pad finished service life, mechanical arm drove described grinding pad and moves to more changing device of grinding pad, realized changing automatically grinding pad, need not manual operation, increased work efficiency.
Further, chemical-mechanical grinding device comprises a plurality of turntables, can grind a plurality of wafers simultaneously, thereby improves grinding efficiency, or realizes that same wafer finishes the support of using different lapping liquids on different turntables, improves the effect of grinding processing procedure; The size of described grinding pad less than, equal wafer, the trend that can cooperate wafer size constantly to increase is convenient to make grinding pad, saves cost of manufacture.
Description of drawings
Fig. 1 is the structural representation of chemical-mechanical grinding device among the utility model one embodiment.
Fig. 2 a～Fig. 2 c is the partial schematic diagram of the embodiment of the utility model chemical-mechanical grinding device.
Fig. 3 is the partial structurtes schematic diagram of chemical-mechanical grinding device described in the utility model one embodiment in process of lapping.
Fig. 4 is the partial structurtes schematic diagram of chemical-mechanical grinding device described in the utility model one embodiment in dressing process.
Fig. 5～Fig. 6 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in changing the grinding pad process.
The specific embodiment
For making content of the present utility model clear more understandable,, content of the present utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in the protection domain of the present utility model.
Secondly, the utility model utilizes schematic diagram to carry out detailed statement, and when the utility model example was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as to qualification of the present utility model.
Fig. 1 is the structural representation of chemical-mechanical grinding device among the utility model one embodiment.As shown in Figure 1, the utility model provides a kind of chemical-mechanical grinding device, comprising: turntable 101, its upper fixed are placed described wafer 200, and the to be ground of described wafer 200 faces up; Grinding pad 105, its abradant surface is down; Grinding head 105, the fixing described grinding pad 103 in its below can drive described grinding pad 103 rotations; Lapping liquid supply pipe 120 is arranged on grinding head 105 or the grinding pad 103;
Fig. 2 a～Fig. 2 c is the partial schematic diagram of the embodiment of the utility model chemical-mechanical grinding device 100.The number of tubes of described lapping liquid supply pipe 120, the installation site on grinding head 105 or grinding pad 103 all can be installed according to actual needs, for example, shown in Fig. 2 a, lapping liquid supply pipe 120 comprises two pipelines, is arranged on the grinding head 105 in described grinding pad 103 outsides; Shown in Fig. 2 b, grinding pad supply pipe 120 comprises a plurality of pipelines, evenly be arranged at described grinding pad 103, grinding pad 103 materials are loose, are easy to get through a plurality of pipelines can be set, and grinding pad 103 directly contacts grinding with wafer 200, so lapping liquid fully drops on described crystal column surface, guarantee uniformity and uniformity that wafer 200 grinds, improve the grinding efficiency of wafer 200, and the outflow pipeline and the flow of lapping liquid are adjusted in the zone that can grind as required, thereby improve the Grinding Quality of wafer 200; Or shown in Fig. 2 c, grinding pad supply pipe 120 comprises a plurality of pipelines, is arranged on simultaneously on grinding pad 103 and the grinding head 105, according to the discharge of grinding needs control grinding pad supply pipe 120.
Further, the diameter of described lapping liquid supply pipe is 1mm～3cm.The flow of described lapping liquid supply pipe is 50ml/min～800ml/min.
Thereby, described lapping liquid supply pipe 120 is arranged on described grinding head 105 or the grinding pad 103, in process of lapping, lapping liquid can be flowed directly on the wafer 200, lapping liquid is distributed on the wafer 200 equably, and the amount of lapping liquid is adjusted in the zone that can grind as required, thereby keeps the uniformity and the uniformity of wafer 200 in process of lapping, and improves the grinding efficiency of wafer 200.
As shown in Figure 1, in the present embodiment, chemical-mechanical grinding device 100 also comprises trimmer 109, is positioned at described turntable 101 sides; Mechanical arm 107, described grinding head 105 is fixed by its arm subordinate side, can drive described grinding pad 103 and move; Grinding pad is changing device more, is positioned at described turntable 101 sides, comprises waste and old grinding pad gathering-device 111 and new grinding pad feeding mechanism 113; Cleaning device is arranged at described turntable 101 tops, comprises deionized water jet pipe and lapping liquid jet pipe.
Further, the turntable 101 of chemical-mechanical grinding device 100 can be provided with a plurality of, grinds a plurality of wafers 200 simultaneously, improves grinding efficiency; Or realize that same wafer 200 finishes the grinding processing procedure of different lapping liquids on different turntables, improve grinding effect.
Further, described grinding pad 103 is circular, and size less than, equal the size of described wafer 200.The size of described grinding pad less than, equal wafer, the trend that can cooperate wafer size constantly to increase is convenient to make grinding pad, saves cost of manufacture.The grinding pad 103 of other shapes is also in thought range of the present utility model in addition.
Fig. 3 is that chemical-mechanical grinding device described in the utility model one embodiment is at the partial structurtes schematic diagram of process of lapping.Please in conjunction with Fig. 1 and shown in Figure 3, in to wafer 200 process of lapping, mechanical arm 107 grasps the fixing grinding pad 103 of described grinding head 105 and grinding head 105 belows, and grinding pad 103 is moved to wafer 200 tops grind, the direction of rotation of grinding pad 103 and wafer 200, rotate and grind simultaneously, lapping liquid supply pipe 120 is opened, and flows out lapping liquid to wafer 200 surfaces according to grinding needs.Described grinding pad 103 is positioned at wafer 200 tops, the particle of lapping liquid can residually not accumulated on the grinding pad 103, thereby help keeping grinding pad 103 roughness, improve grinding rate, prolong the service time of grinding pad 103, reduce grinding pad 103 and change number of times, increase work efficiency.Wherein the arm hand 108 of mechanical arm 107 grasps grinding head 105, between mechanical arm 107 and the grinding head 105 pressure-regulating device 110 is set also.Described pressure-regulating device 110 comprises the compressed air shower nozzle and is arranged at pressure-regulating valve on the described compressed air shower nozzle (indicating among the figure), in process of lapping, by regulating pressure-regulating device 110, the pressure between grinding pad 103 and the wafer 200 be can improve, grinding effect and the speed preset obtained.
Fig. 4 is that chemical-mechanical grinding device described in the utility model one embodiment is at the partial structurtes schematic diagram of dressing process.Please in conjunction with Fig. 1 and shown in Figure 4, grinding pad 103 is being carried out in the dressing process, mechanical arm 107 grasps the fixing grinding pad 103 of described grinding head 105 and grinding head 105 belows, and grinding pad 103 is moved to trimmer 109 tops grind, described trimmer 109 can comprise the diamond lap particle 115 that is used to repair, in addition, grind material and can also be the organic synthesis material, trimmer also comprises 109 water injectors 112.In dressing process, described trimmer 109 is positioned at described grinding pad 103 belows, avoid repairing diamond lap particle that comes off on particle that residual impurity comprises that grinding pad 103 grinds away and the trimmer 109 etc., and the liquid that can not of water injector 112 ejection remains on the grinding pad 103, reduces the finishing residual impurity then and in follow-up process of lapping wafer 200 caused scratch.Fig. 5～Fig. 6 is the partial structurtes side view of chemical-mechanical grinding device described in the utility model one embodiment in changing the grinding pad process.Please in conjunction with Fig. 1 and Fig. 5～shown in Figure 6, when grinding pad finishes for 103 service lifes, mechanical arm 107 drives described grinding pad 103 and moves to more changing device 111 of grinding pad, earlier old grinding pad 103a is positioned in the waste and old lapping device 111, from new grinding pad feeding mechanism 113, grasp new grinding pad 103b again, realize changing automatically grinding pad, need not manual operation, increase work efficiency.Further, place new grinding pad 103b in the described new grinding feeding mechanism 113, in described new grinding pad feeding mechanism, be provided with deionized water shower nozzle 114, the described new grinding pad 103b of water spraying direction subtend.Deionized water water spray guarantees that new grinding pad 103b keeps moistening constantly, reduces when grinding with wafer 200 scuffing to wafer 200.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection domain of the present utility model is as the criterion when looking claims person of defining.
Claims (9)
1. a chemical-mechanical grinding device is used to grind wafer, it is characterized in that, comprising:
Turntable, its upper fixed is placed described wafer, and the to be ground of described wafer faces up;
Grinding pad, its abradant surface is down;
Grinding head, the fixing described grinding pad in its below can drive described grinding pad rotation;
The lapping liquid supply pipe is arranged on grinding head or the grinding pad.
2. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, described lapping liquid supply pipe comprises a plurality of pipelines, evenly is arranged on the described grinding pad.
3. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, described lapping liquid supply pipe is arranged on the grinding head in the described grinding pad outside.
4. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, the diameter of described lapping liquid supply pipe is 1mm～3cm.
5. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, the flow of described lapping liquid supply pipe is 50ml/min～800ml/min.
6. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, described grinding pad is circular, and size less than, equal the size of described wafer.
7. chemical-mechanical grinding device as claimed in claim 1 is characterized in that, also comprises
Trimmer is positioned at by the described turntable;
Mechanical arm, described grinding head is fixed by its arm subordinate side, can drive described grinding pad and move;
Grinding pad is changing device more, is positioned at by the described turntable, comprises waste and old grinding pad gathering-device and new grinding pad feeding mechanism;
Cleaning device is arranged at described turntable top, comprises deionized water jet pipe and lapping liquid jet pipe.
8. chemical-mechanical grinding device as claimed in claim 7, it is characterized in that, also be provided with pressure-regulating device between described mechanical arm and the described grinding head, described pressure-regulating device comprises the compressed air shower nozzle and is arranged at pressure-regulating valve on the described compressed air shower nozzle.
9. chemical-mechanical grinding device as claimed in claim 7 is characterized in that, places new grinding pad in the described new grinding feeding mechanism, is provided with the deionized water shower nozzle in described new grinding pad feeding mechanism, the described new grinding pad of water spraying direction subtend.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206736406U CN201913543U (en) | 2010-12-21 | 2010-12-21 | Chemical mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206736406U CN201913543U (en) | 2010-12-21 | 2010-12-21 | Chemical mechanical polishing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201913543U true CN201913543U (en) | 2011-08-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206736406U Expired - Lifetime CN201913543U (en) | 2010-12-21 | 2010-12-21 | Chemical mechanical polishing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201913543U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102294649A (en) * | 2011-09-07 | 2011-12-28 | 清华大学 | Chemical mechanical polishing method |
| CN103100966A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping device and system |
| CN103302587A (en) * | 2012-03-16 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing (CMP) device and system |
| CN103831709A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Chemical mechanical grinding device and method |
| CN105397596A (en) * | 2015-10-21 | 2016-03-16 | 无锡清杨机械制造有限公司 | Mechanical grinding equipment |
| CN113714927A (en) * | 2021-08-27 | 2021-11-30 | 苏州斯尔特微电子有限公司 | Wafer grinding mechanical grinding process |
-
2010
- 2010-12-21 CN CN2010206736406U patent/CN201913543U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102294649A (en) * | 2011-09-07 | 2011-12-28 | 清华大学 | Chemical mechanical polishing method |
| CN103100966A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping device and system |
| CN103100966B (en) * | 2011-11-11 | 2015-09-02 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing device and system |
| CN103302587A (en) * | 2012-03-16 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing (CMP) device and system |
| CN103302587B (en) * | 2012-03-16 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing device and system |
| CN103831709A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Chemical mechanical grinding device and method |
| CN105397596A (en) * | 2015-10-21 | 2016-03-16 | 无锡清杨机械制造有限公司 | Mechanical grinding equipment |
| CN113714927A (en) * | 2021-08-27 | 2021-11-30 | 苏州斯尔特微电子有限公司 | Wafer grinding mechanical grinding process |
| CN113714927B (en) * | 2021-08-27 | 2024-04-09 | 苏州斯尔特微电子有限公司 | Wafer chemical mechanical polishing process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130329 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130329 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CX01 | Expiry of patent term |
Granted publication date: 20110803 |
|
| CX01 | Expiry of patent term |