CN102294649A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
- Publication number
- CN102294649A CN102294649A CN2011102643473A CN201110264347A CN102294649A CN 102294649 A CN102294649 A CN 102294649A CN 2011102643473 A CN2011102643473 A CN 2011102643473A CN 201110264347 A CN201110264347 A CN 201110264347A CN 102294649 A CN102294649 A CN 102294649A
- Authority
- CN
- China
- Prior art keywords
- polishing pad
- cmp method
- mechanical polishing
- chemically mechanical
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemical mechanical polishing method. The chemical mechanical polishing method comprises the following steps of: A) clamping a wafer by using a polishing head to perform chemical mechanical polishing on the wafer on a polishing pad; and B) spraying water to the polishing pad to moisturize the polishing pad when chemical mechanical polishing is stopped. According to the chemical mechanical polishing method of the embodiment, not only the chemical mechanical polishing effect can be improved, but also the service life of the polishing pad can be greatly prolonged.
Description
Technical field
The present invention relates to integrated circuit fields, in particular to a kind of cmp method.
Background technology
In the manufacture process of integrated circuit,, also more and more higher to the requirement of wafer surface flatness along with the increase with the metal interconnected number of plies dwindled of characteristic size.At present, chemically mechanical polishing is the most effective overall planarization.Chemically mechanical polishing is with the rubbing head clamping of wafer by rotation, and be pressed in it on polishing pad of rotation with certain pressure, the polishing fluid of being made up of abrasive particle and chemical solution flows between wafer and polishing pad, and crystal column surface is realized planarization under the acting in conjunction of chemistry and machinery.In existing cmp method, there is polishing pad short defective in service life.
Summary of the invention
The present invention is intended to solve at least one of technical problem that exists in the prior art.
The inventor has found the short reason in service life of polishing pad in the existing cmp method after through further investigation: two wafer are being carried out the gap of chemically mechanical polishing and when chemical-mechanical polisher is safeguarded, the drying that polishing pad can become.Because the surface of dry polishing pad is hard, therefore utilizing dry polishing pad to carry out chemically mechanical polishing not only can influence the chemically mechanical polishing effect, and has reduced widely the service life of polishing pad.
For this reason, one object of the present invention is to propose a kind of cmp method that can prolong the service life of polishing pad widely.
To achieve these goals, propose a kind of cmp method according to embodiments of the invention, described cmp method comprises: A) utilize rubbing head clamping wafer on polishing pad described wafer is carried out chemically mechanical polishing; And B) sprays water so that described polishing pad is preserved moisture to described polishing pad at described chemically mechanical polishing stopping period.
According to the cmp method of the embodiment of the invention by at described chemically mechanical polishing stopping period to described polishing pad water spray so that described polishing pad is preserved moisture, thereby can be when beginning to carry out described chemically mechanical polishing, make described polishing pad be in moistening state, the surface of described like this polishing pad is soft.In other words, described chemically mechanical polishing is carried out on moistening described polishing pad all the time.Therefore, described cmp method not only can improve the effect of chemically mechanical polishing, and can prolong the service life of described polishing pad widely.When utilizing existing cmp method to carry out chemically mechanical polishing, be approximately the service life of polishing pad 2000 times.When utilizing cmp method according to the embodiment of the invention to carry out chemically mechanical polishing, can reach the service life of polishing pad 200 2500 times.
In addition, the cmp method according to the embodiment of the invention can have following additional technical characterictic:
According to one embodiment of present invention, described water is deionized water, can avoid like this in the process of described water spray impurity being guided on the described polishing pad.
According to one embodiment of present invention, when surpassing the time period of pre-fixed length, sprays water the time that described chemically mechanical polishing stops to described polishing pad.Can reduce the use amount of water not influencing the chemically mechanical polishing effect, not shortening under the situation in service life of described polishing pad like this, lower production cost.
According to one embodiment of present invention, the time period of described pre-fixed length is at least 5 minutes.
According to one embodiment of present invention, be right after described chemically mechanical polishing begin before to described polishing pad water spray.Can make the water content of described polishing pad reach maximum like this and make the surface of described polishing pad the most soft, thereby can further improve the effect of chemically mechanical polishing, further prolong service life of described polishing pad.
According to one embodiment of present invention, described water spray carries out continuously.
According to one embodiment of present invention, described water spray continues 5 seconds at least.
According to one embodiment of present invention, the rotary speed of described polishing pad is not more than 60 rev/mins during described water spray.So not only described water can be sprayed onto on the whole described polishing pad equably, and can avoid and to reflect away to the water of described polishing pad injection, and can not make the water on the described polishing pad leave described polishing pad.
According to one embodiment of present invention, the flow of described water is not more than 6 liters/minute during described water spray.
According to one embodiment of present invention, the flow of described water is not more than 3 liters/minute during described water spray.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 utilizes the schematic diagram that wafer is carried out chemically mechanical polishing according to the cmp method of the embodiment of the invention; With
Fig. 2 is the flow chart according to the cmp method of the embodiment of the invention.
The specific embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " vertically ", " laterally ", " on ", close the orientation of indications such as D score, " preceding ", " back ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward " or position is based on orientation shown in the drawings or position relation, only be that the present invention for convenience of description and simplification are described, rather than indication or the hint device of indication or element must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used to describe purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, unless otherwise prescribed and limit, need to prove that term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly to link to each other, and also can link to each other indirectly by intermediary, for the ordinary skill in the art, can understand the concrete implication of above-mentioned term as the case may be.
Below with reference to Fig. 1 and Fig. 2 cmp method according to the embodiment of the invention is described.As depicted in figs. 1 and 2, the cmp method according to the embodiment of the invention comprises:
A) utilize rubbing head 100 clamping wafers on polishing pad 200, described wafer is carried out chemically mechanical polishing; With
B) spray water so that polishing pad 200 is preserved moisture to polishing pad 200 at described chemically mechanical polishing stopping period.
According to the cmp method of the embodiment of the invention by at described chemically mechanical polishing stopping period to polishing pad 200 water sprays so that polishing pad 200 is preserved moisture, thereby can be when beginning to carry out described chemically mechanical polishing, make polishing pad 200 be in moistening state, the surface of polishing pad 200 is soft like this.In other words, described chemically mechanical polishing is carried out on moistening polishing pad 200 all the time.Therefore, described cmp method not only can improve the effect of chemically mechanical polishing, and can prolong the service life of polishing pad 200 widely.When utilizing existing cmp method to carry out chemically mechanical polishing, be approximately the service life of polishing pad 2000 times.When utilizing cmp method according to the embodiment of the invention to carry out chemically mechanical polishing, can reach the service life of polishing pad 200 2500 times.
Described chemically mechanical polishing stopping period should be made broad understanding.Wherein, described chemically mechanical polishing stopping period comprises, but be not limited to, carry out (, therefore need carrying out repeatedly described chemically mechanical polishing) before the described chemically mechanical polishing first time owing to need carry out chemically mechanical polishing to a plurality of wafers successively, the gap between adjacent twice described chemically mechanical polishing, to chemical-mechanical polisher safeguard during etc.
In some embodiments of the invention, described water can be deionized water, promptly can spray deionized water to polishing pad 200, can avoid like this in the process of described water spray impurity being guided on the polishing pad 200.
In one embodiment of the invention, can be when the time that described chemically mechanical polishing stops to surpass the time period of pre-fixed length to polishing pad 200 water sprays.After described chemically mechanical polishing stopped, the moisture on the polishing pad 200 can constantly run off.If the time ratio that described chemically mechanical polishing stops is shorter, then polishing pad 200 still contains certain moisture, and the surface of polishing pad 200 is also soft like this.Each side such as comprehensive using water wisely, production cost, chemically mechanical polishing effect, polishing pad service life are considered, in the time of can surpassing the time period of pre-fixed length in the time that described chemically mechanical polishing stops, just to polishing pad 200 water sprays.Can reduce the use amount of water not influencing the chemically mechanical polishing effect, not shortening under the situation in service life of polishing pad 200 like this, lower production cost.Particularly, the time period of described pre-fixed length can be at least 5 minutes.Promptly when the time that described chemically mechanical polishing stops to surpass 5 minutes, can spray water to polishing pad 200.
Advantageously, can be right after described chemically mechanical polishing begin before to polishing pad 200 water spray.In other words, after polishing pad 200 water sprays finish, carry out described chemically mechanical polishing immediately.Can make the water content of polishing pad 200 reach maximum like this and make the surface of polishing pad 200 the most soft, thereby can further improve the effect of chemically mechanical polishing, further prolong service life of polishing pad 200.
In an example of the present invention, described water spray can carry out continuously.Particularly, described water spray can continue 5 seconds at least, thereby can moistening fully polishing pad 200.
To polishing pad 200 water sprays the time, polishing pad 200 is rotated with certain rotary speed, water is sprayed onto on the whole polishing pad 200 equably.Wherein, the rotary speed of polishing pad 200 is fast more, is sprayed onto even more that water on the polishing pad 200 distributes on polishing pad 200.If but the rotary speed of polishing pad 200 is too fast, then polishing pad 200 can reflect away to the water that polishing pad 200 sprays, and the water on the polishing pad 200 can leave polishing pad 200 under action of centrifugal force.In examples more of the present invention, the rotary speed of polishing pad 200 can be not more than 60 rev/mins during described water spray, so not only described water can be sprayed onto equably on the whole polishing pad 200, and can avoid and to reflect away to the water of polishing pad 200 injections, and can not make the water on the polishing pad 200 leave polishing pad 200.Advantageously, the rotary speed of polishing pad 200 can be not more than 30 rev/mins during described water spray.
In some embodiments of the invention, the flow of described water can be not more than 6 liters/minute during described water spray.Advantageously, the flow of described water can be not more than 3 liters/minute during described water spray.
Not only can improve the effect of chemically mechanical polishing according to the cmp method of the embodiment of the invention, and can prolong the service life of polishing pad 200 widely.
In the description of this specification, concrete feature, structure, material or characteristics that the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means in conjunction with this embodiment or example description are contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete feature, structure, material or the characteristics of description can be with the suitable manner combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple variation, modification, replacement and modification to these embodiment under the situation that does not break away from principle of the present invention and aim, scope of the present invention is limited by claim and equivalent thereof.
Claims (10)
1. a cmp method is characterized in that, comprising:
A) utilize rubbing head clamping wafer on polishing pad, described wafer is carried out chemically mechanical polishing; With
B) spray water so that described polishing pad is preserved moisture to described polishing pad at described chemically mechanical polishing stopping period.
2. cmp method according to claim 1 is characterized in that, described water is deionized water.
3. cmp method according to claim 1 is characterized in that, sprays water to described polishing pad when the time that described chemically mechanical polishing stops to surpass the time period of pre-fixed length.
4. cmp method according to claim 3 is characterized in that the time period of described pre-fixed length is at least 5 minutes.
5. cmp method according to claim 1 is characterized in that, be right after described chemically mechanical polishing begin before to described polishing pad water spray.
6. cmp method according to claim 1 is characterized in that described water spray carries out continuously.
7. cmp method according to claim 6 is characterized in that, described water spray continues 5 seconds at least.
8. cmp method according to claim 1 is characterized in that, the rotary speed of described polishing pad is not more than 60 rev/mins during described water spray.
9. cmp method according to claim 2 is characterized in that, the flow of described water is not more than 6 liters/minute during described water spray.
10. cmp method according to claim 9 is characterized in that, the flow of described water is not more than 3 liters/minute during described water spray.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102643473A CN102294649A (en) | 2011-09-07 | 2011-09-07 | Chemical mechanical polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102643473A CN102294649A (en) | 2011-09-07 | 2011-09-07 | Chemical mechanical polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102294649A true CN102294649A (en) | 2011-12-28 |
Family
ID=45355449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102643473A Pending CN102294649A (en) | 2011-09-07 | 2011-09-07 | Chemical mechanical polishing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102294649A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1611326A (en) * | 2003-10-28 | 2005-05-04 | 茂德科技股份有限公司 | Chip carrying tool for chemical machine polishing platform |
| CN101898328A (en) * | 2009-04-27 | 2010-12-01 | 瑞萨电子株式会社 | Polissoir and finishing method |
| CN101934497A (en) * | 2010-08-11 | 2011-01-05 | 中国电子科技集团公司第四十五研究所 | Single-sided chemically mechanical polishing method and device of silicon chip |
| CN102049723A (en) * | 2009-10-28 | 2011-05-11 | 硅电子股份公司 | Method for polishing a semiconductor wafer |
| CN201856166U (en) * | 2010-08-26 | 2011-06-08 | 武汉新芯集成电路制造有限公司 | Moisturizing and cleaning device of grinding head |
| CN201913543U (en) * | 2010-12-21 | 2011-08-03 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing equipment |
-
2011
- 2011-09-07 CN CN2011102643473A patent/CN102294649A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1611326A (en) * | 2003-10-28 | 2005-05-04 | 茂德科技股份有限公司 | Chip carrying tool for chemical machine polishing platform |
| CN101898328A (en) * | 2009-04-27 | 2010-12-01 | 瑞萨电子株式会社 | Polissoir and finishing method |
| CN102049723A (en) * | 2009-10-28 | 2011-05-11 | 硅电子股份公司 | Method for polishing a semiconductor wafer |
| CN101934497A (en) * | 2010-08-11 | 2011-01-05 | 中国电子科技集团公司第四十五研究所 | Single-sided chemically mechanical polishing method and device of silicon chip |
| CN201856166U (en) * | 2010-08-26 | 2011-06-08 | 武汉新芯集成电路制造有限公司 | Moisturizing and cleaning device of grinding head |
| CN201913543U (en) * | 2010-12-21 | 2011-08-03 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106312780B (en) | Polissoir | |
| CN202825512U (en) | Grinding pad and chemical machinery grinding machine | |
| CN102328272A (en) | Chemically mechanical polishing method | |
| CN204053660U (en) | A kind of pipe polishing device | |
| JP2010253637A5 (en) | Polishing equipment | |
| CN102248486B (en) | Polishing pad trimming method | |
| CN209190544U (en) | A kind of polish brush | |
| CN101879699A (en) | Circulating progressive planarization method and semiconductor grinding cleaning device used for method | |
| CN105127136A (en) | Cleaning machine | |
| CN102229105A (en) | Chemically mechanical polishing method | |
| CN106475896B (en) | Chemical Mechanical Polishing Apparatus and Method | |
| CN102601718A (en) | Control method and control device for chemical mechanical grinding and method and equipment for chemical mechanical grinding | |
| CN102229101A (en) | Chemically mechanical polishing method | |
| CN102294647A (en) | Chemical mechanical polishing method | |
| CN102284912A (en) | Cooling device of edging machine | |
| CN102294649A (en) | Chemical mechanical polishing method | |
| CN102320026A (en) | Chemical mechanical polishing method | |
| CN102873640A (en) | Grinding pad finisher | |
| CN108284383B (en) | Chemical mechanical polishing device and chemical mechanical polishing method | |
| US20090093199A1 (en) | Cleaning device for chemical mechanical polishing equipment | |
| CN102248477A (en) | Chemical and mechanical polishing method | |
| CN105563301B (en) | Cmp method, the method to set up of its polishing time processing procedure and wafer | |
| CN103659548B (en) | Rubbing head | |
| US20130112651A1 (en) | Method for manufacturing coil parts | |
| CN102129959A (en) | Wafer cleaning device and method for cleaning wafer by using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111228 |