CN201559124U - Grinding head assembly cleaning device and chemical mechanical grinding device - Google Patents
Grinding head assembly cleaning device and chemical mechanical grinding device Download PDFInfo
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- CN201559124U CN201559124U CN2009202106880U CN200920210688U CN201559124U CN 201559124 U CN201559124 U CN 201559124U CN 2009202106880 U CN2009202106880 U CN 2009202106880U CN 200920210688 U CN200920210688 U CN 200920210688U CN 201559124 U CN201559124 U CN 201559124U
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Abstract
The utility model discloses a grinding head assembly cleaning device and a chemical mechanical grinding device. The cleaning device includes a cleaning tube and a plurality cleaning sprayers led out by the cleaning tube, and the cleaning sprayers are matched with a grinding head and a grinding head support so as to lead cleaning liquid sprayed out from the sprayers to be capable of cleaning the grinding head and removing residual grinding liquid on the grinding head support, thereby increasing cleaning efficiency and improving product yield.
Description
Technical field
The utility model relates to integrated circuit and makes the field, relates in particular to a kind of cleaning device and chemical-mechanical grinding device of grinding head assembly.
Background technology
Develop rapidly along with super large-scale integration, integrated circuit fabrication process becomes and becomes increasingly complex with pleasantly surprised, in order to improve integrated level, reduce manufacturing cost, size of semiconductor device reduces day by day, plane routing has been difficult to satisfy the requirement that the semiconductor devices high density distributes, can only adopt polylaminate wiring technique, further improves the integration density of semiconductor devices.Because multilayer interconnection or the bigger deposition process of filling depth ratio have caused the excessive fluctuating of wafer surface, cause the difficulty that photoetching process focuses on, feasible control ability to live width weakens, and has reduced the uniformity of live width on the entire wafer.For this reason, need carry out planarization to irregular wafer surface.At present, cmp (Chemical Mechanical Polishing, CMP) be the best approach of reaching overall planarization, especially after semiconductor fabrication process entered sub-micron (sub-micron) field, cmp had become an indispensable manufacture craft technology.
Cmp is the technical process of a complexity, it is that wafer surface is contacted with the lapped face of grinding pad, then, by the relative motion between wafer surface and the lapped face with the wafer surface planarization, the common chemical-mechanical grinding device that adopts is also referred to as grinder station or polishing machine platform carries out chemical mechanical milling tech.When carrying out cmp, utilize grinding head assembly absorption wafer, the grinding head that this grinding head assembly comprises the grinding head support and is connected and is positioned at grinding head support below with the grinding head support, the bottom surface diameter of this grinding head is less than the bottom surface length of grinding head support, the die attach that can grind is on grinding head, this wafer to be ground faces down and contacts counterrotating grinding pad, the downforce that grinding head provides is pressed onto this wafer on the grinding pad, described grinding pad is to be pasted on the platform (platen), when rotating under the drive of this platform at motor, grinding head also carries out relative motion.Simultaneously, lapping liquid is transported on the grinding pad by the lapping liquid supply line, and be evenly distributed on the grinding pad by centrifugal force, the employed lapping liquid of cmp generally includes chemical mordant and abrasive grains, chemical reaction by chemical mordant and described surface to be ground generates softer easy to be removed material, then by mechanical friction material that these are softer from being removed by the surface of grinding wafers, reach the effect of overall planarization.
In chemical mechanical planarization process, these lapping liquids can splashes to grinding head and the subregion that is positioned at the grinding head support above the grinding head, if the lapping liquid on grinding head and the grinding head support is not in time cleaned out, will on grinding head and grinding head support, form the crystalline solid of lapping liquid, and these crystalline solid are in follow-up process of lapping, very likely drop on grinding head and the grinding pad, thereby produce cut defectives such as (scratch) in wafer surface.For this reason, generally be provided with the on-line cleaning device in the chemical-mechanical grinding device, between the chemical-mechanical grinding device lay-up period, to clean grinding head, simultaneously, when board is reported to the police, grinding head is moved to the cleaning device top, spray deionized water to remove residual lapping liquid on the wafer to wafer.
Please refer to Fig. 1, it is the cleaning schematic diagram of existing cleaning device, as shown in Figure 1, the grinding head support 11 of grinding head assembly 10 is connected with grinding head 12, grinding head 12 can utilize cleaning device 20 to clean grinding heads 12 by vacuum suction wafer 30, when grinding head 12 when cleaning shower nozzle 22 on the scavenge pipe 21 aligns, clean shower nozzle 22 ejection deionized waters described grinding head 12 is cleaned, to remove accompanying lapping liquid and other particle on wafer 30 and the grinding head 12.
Yet, because the bottom surface length of this grinding head support 11 is greater than the bottom surface diameter of grinding head 12, and the length of existing scavenge pipe 21 is only mated with grinding head 12, the deionized water that cleaning shower nozzle 22 on the scavenge pipe 21 sprays can only cover the base surface area of whole grinding head 12, that is to say, existing cleaning device 20 only can clean grinding head 12, lapping liquid residual on the grinding head support 11 then can't clean, to form crystalline solid after these lapping liquids are long-time, these crystalline solid and lapping liquid then very likely drop on the grinding pad, thereby produce cut on wafer 30 surfaces, these cuts very easily cause short circuit or open circuit phenomenon at intermetallic, reduce the yield of product greatly, bring tremendous loss to explained hereafter.
The utility model content
The utility model provides a kind of cleaning device of grinding head assembly, can't remove lapping liquid residual on the grinding head support to solve existing cleaning device, thereby cause these lapping liquids formation crystalline solid and produce cut, reduce the problem of the yield of product in wafer surface.
For addressing the above problem, the utility model proposes a kind of cleaning device of grinding head assembly, a plurality of grinding heads that this grinding head assembly comprises the grinding head support and is connected and is positioned at described grinding head support below with described grinding head support, described cleaning device comprises scavenge pipe and by a plurality of cleaning shower nozzles of drawing on the described scavenge pipe, described cleaning shower nozzle and described grinding head and grinding head support are complementary, and make the cleaning fluid of described cleaning shower nozzle ejection can clean described grinding head and grinding head support.
Optionally, described grinding head support comprises four support arms, and described grinding head is positioned at each support arm below.
Optionally, the length of described scavenge pipe is identical with the length of described support arm, and the length of described scavenge pipe is 45～60cm.
Optionally, the length of described scavenge pipe is greater than the length of described support arm.
Optionally, the quantity of described cleaning shower nozzle is 6～10.
Optionally, described scavenge pipe is communicated with a main pipe rail, and described main pipe rail is the deionized water pipeline.
The utility model also provides a kind of chemical-mechanical grinding device, described chemical-mechanical grinding device comprises a plurality of grinding pads, the grinding head assembly, and a plurality of cleaning devices that are fixed between the adjacent grinding pad, described cleaning device is used to clean described grinding head assembly, a plurality of grinding heads that described grinding head assembly comprises the grinding head support and is connected and is positioned at described grinding head support below with described grinding head support, described cleaning device comprises scavenge pipe and by a plurality of cleaning shower nozzles of drawing on the described scavenge pipe, described cleaning shower nozzle and described grinding head and grinding head support are complementary, and make the cleaning fluid of described cleaning shower nozzle ejection can clean described grinding head and grinding head support.
Optionally, described grinding head support comprises four support arms, and described grinding head is positioned at described support arm below.
Optionally, the length of described scavenge pipe is identical with the length of described support arm, and the length of described scavenge pipe is 45～60cm.
Optionally, the length of described scavenge pipe is greater than the length of described support arm.
Optionally, described scavenge pipe is fixed between the described adjacent grinding pad.
Optionally, the quantity of described cleaning shower nozzle is 6～10.
Optionally, described scavenge pipe is communicated with a main pipe rail, and described main pipe rail is the deionized water pipeline.
Compared with prior art, the cleaning shower nozzle of the cleaning device of grinding head assembly provided by the utility model and grinding head and grinding head support are complementary, be the fringe region of described cleaning shower nozzle corresponding to whole grinding head and grinding head support bottom surface, make the cleaning fluid of described cleaning shower nozzle ejection not only can clean described grinding head, and can remove residual lapping liquid on the described grinding head support, improve cleaning efficiency, and then improved the yield of product.
Description of drawings
Fig. 1 is the cleaning schematic diagram of existing cleaning device;
The schematic diagram of the chemical-mechanical grinding device that Fig. 2 provides for the utility model embodiment;
The cleaning schematic diagram of the cleaning device that Fig. 3 provides for the utility model embodiment.
The specific embodiment
Be described in further detail below in conjunction with the cleaning device and the chemical-mechanical grinding device of the drawings and specific embodiments the grinding head assembly that the utility model proposes.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of aid illustration the utility model embodiment lucidly.
In background technology, mention, because the bottom surface length of existing grinding head support is greater than the bottom surface diameter of grinding head, and the length of the scavenge pipe of existing cleaning device is identical with grinding head just, the deionized water that cleaning shower nozzle on the scavenge pipe sprays only covers the base surface area of whole grinding head, that is to say, existing cleaning device only can clean grinding head, and can't wash lapping liquid residual on the grinding head support, will form crystalline solid after these residual lapping liquids are long-time, these crystalline solid very likely drop on the grinding pad, thereby produce cut in wafer surface, these cuts will cause causing short circuit or open circuit phenomenon at intermetallic, reduce the yield of product greatly, bring tremendous loss to explained hereafter.
Core concept of the present utility model is, a kind of cleaning device of grinding head assembly is provided, the cleaning shower nozzle of this cleaning device and grinding head and grinding head support are complementary, be the fringe region of described cleaning shower nozzle corresponding to whole grinding head and grinding head support bottom surface, make the cleaning fluid of described cleaning shower nozzle ejection not only can clean described grinding head, and can remove residual lapping liquid on the described grinding head support, improve cleaning efficiency, and then improve the yield of product.
In chemical mechanical planarization process, the common process of lapping of same wafer comprises corase grind, fine grinding and correct grinding three phases, the stage of corase grind is to be used for grinding away the most metal of described wafer surface, the stage of fine grinding is to grind the metal that contacts with the barrier layer by the method that reduces grinding rate, and make to grind by the endpoint detecting technology and rest on the barrier layer, finish grind at last, promptly grind away barrier layer and a spot of dielectric oxide.Therefore, in the process that wafer grinds, the grinding head assembly of holding chip just need be used between the grinding pad of different phase mobile, to carry out the grinding of different phase.
Please refer to Fig. 2 and Fig. 3, wherein, the cleaning schematic diagram of the cleaning device that the schematic diagram of the chemical-mechanical grinding device that Fig. 2 provides for the utility model embodiment, Fig. 3 provide for the utility model embodiment.This chemical-mechanical grinding device comprise grinding head assembly 100, four cleaning devices 200, three be used for grinding pad 400, the lapping liquid supply line 500 in different grinding stages and the initial bit 600 that is used for loading and unloading wafer, wherein, this grinding head assembly 100 comprises grinding head support 110 and grinding head 120.
Specifically, this grinding head support 110 is rotatable, it roughly is cross, this grinding head support 110 has four support arms 111, and the below of each support arm 111 is connected with a grinding head 120, wherein, this grinding head 120 is circular, each support arm 111 of grinding head support 110 is roughly rectangular shape, and the diameter of grinding head 120 is less than the bottom surface length of grinding head support 110, and this cleaning device 200 is fixed between the adjacent grinding pad 400.
The employed lapping liquid of cmp generally includes chemical mordant and abrasive grains, the chemical reaction on the surface to be ground by chemical mordant and wafer 300 generates softer easy to be removed material, then by mechanical friction material that these are softer from being removed by the surface of grinding wafers.And in case in some stages of process of lapping, chemical-mechanical grinding device is owing to fault alarm interrupts process of lapping, can't carry out the grinding of next stage, the grinding head 120 that just clamping must wafer 300 turns to cleaning device 200 tops, spray deionized water with flushing wafer 300, to remove residual lapping liquid on the wafer 300.Otherwise, the lapping liquid that adheres on the wafer 300 is very fast to the corrosion rate of the metal level on wafer 300 surfaces, interrupting surpassing five minutes is about to cause wafer 300 to scrap, simultaneously, lapping liquid on the grinding head support 110 also will be cleaned totally, otherwise, will on grinding head support 110, form crystalline solid, and these lapping liquids and crystalline solid are in follow-up process of lapping, very likely drop on grinding head 120 and the grinding pad 400, influence the stability of chemical mechanical milling tech, reduce the yield of product.
And, between the chemical-mechanical grinding device lay-up period, also need often grinding head 120 to be moved to cleaning device 200 tops, to clean the fringe region of grinding head 120 and grinding head support 110, avoid these zones to go up the residual lapping liquid that has, otherwise after these lapping liquids form crystalline solid, very easily produce defectives such as cut, bring tremendous loss to explained hereafter in wafer surface.
The cleaning shower nozzle 220 of the cleaning device 200 of the chemical grinding equipment that the utility model embodiment provides is complementary with grinding head 120 and grinding head support 110, that is to say, this cleaning device 200 can not only clean grinding head 120, and can clean lapping liquid residual on the grinding head support 110, improved cleaning efficiency, avoid these lapping liquids and lapping liquid crystalline solid in subsequent technique, drop on grinding head 120 and the grinding pad 400, help improving the stability of technology, improved the yield of product.
Please continue with reference to figure 3, and in conjunction with Fig. 2, the diameter of described grinding head 120 is less than the bottom surface length of grinding head support 110, grinding head support 110 inside are provided with vacuum line, this grinding head 120 is the mode holding chips 300 that utilize vacuum suction, the edge designs of the bottom surface of the supporting disk 121 of this grinding head 120 has a wafer retaining ring (retaining ring) 122, described wafer retaining ring 122 defined zones form a groove, wafer 300 can be contained in wherein, so that wafer 300 better is fixed on the grinding head 120.In addition, one buffer film (membrane) 123 is arranged in the central area of this grinding head 120, when carrying out cmp, the supporting disk 121 of 110 pairs of grinding heads 120 of grinding head support is exerted pressure, exert pressure by 121 pairs of buffer films 123 of supporting disk, itself and wafer 300 to be ground are adjacent to, and the pressure distribution on the wafer 300 is even, can guarantee uniform grinding wafers 300.
Described cleaning device 200 comprises scavenge pipe 210 and by a plurality of cleaning shower nozzles 220 of drawing on the described scavenge pipe 210, described cleaning shower nozzle 220 is complementary with grinding head 120 and grinding head support 110, makes the cleaning fluid of described cleaning shower nozzle 220 ejections can clean described grinding head 120 and grinding head support 110.
Described scavenge pipe 210 is to be communicated with main pipe rail, wherein, this main pipe rail is the deionized water pipeline, the cleaning fluid of described cleaning shower nozzle 220 ejections is deionized waters, that is to say, this cleaning device 200 is to utilize deionized water rinsing to fall the lapping liquid of grinding head assembly 100 remained on surface, and described deionized water can be effectively and cleaned described grinding head assembly fast.
In a specific embodiment of the present utility model, the diameter of described grinding head 120 is about 30～35cm, the length of this support arm 111 is about 40～70cm, the length of the length of described scavenge pipe 210 and support arm 111 is identical and greater than the diameter of grinding head 120, for example, the length of scavenge pipe 210 can be 40～70cm, therefore the deionized water of 220 sprinklings of the cleaning shower nozzle on scavenge pipe 210 can be sprayed onto the fringe region of whole grinding head 120 and support arm 111 bottom surfaces, guarantee to clean lapping liquid residual on the grinding head support 111, improved cleaning efficiency, avoid these lapping liquids and lapping liquid crystalline solid to drop on grinding head and the grinding pad, help improving the stability of technology, improved the yield of product.
Yet will be appreciated that in other specific embodiment of the present utility model, according to actual needs, the length of scavenge pipe 210 also can be slightly larger than the length of support arm 111.
Further, scavenge pipe 210 is to be fixed between the adjacent grinding pad 400, scavenge pipe 210 is the constant hard tubes of fixed in shape, on each scavenge pipe 210, installed 7 and cleaned shower nozzle 220,, yet should be realized that with the cleaning efficiency of raising cleaning device 200, can also on described scavenge pipe 210, be provided with according to actual needs and still less or more clean shower nozzle 220, for example 6～10, and, each clean shower nozzle 220 between distance also can be according to the actual conditions setting.
In sum, the utility model provides a kind of cleaning device of grinding head assembly, described cleaning device comprises scavenge pipe and by a plurality of cleaning shower nozzles of drawing on the described scavenge pipe, described cleaning shower nozzle and described grinding head and grinding head support are complementary, make the cleaning fluid of described cleaning shower nozzle ejection not only can clean described grinding head, and can remove residual lapping liquid on the described grinding head support, improve cleaning efficiency, and then improve the yield of product.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (17)
1. the cleaning device of a grinding head assembly, a plurality of grinding heads that this grinding head assembly comprises the grinding head support and is connected and is positioned at described grinding head support below with described grinding head support, it is characterized in that, described cleaning device comprises scavenge pipe and by a plurality of cleaning shower nozzles of drawing on the described scavenge pipe, described cleaning shower nozzle and described grinding head and grinding head support are complementary, and make the cleaning fluid of described cleaning shower nozzle ejection can clean described grinding head and grinding head support.
2. the cleaning device of grinding head assembly as claimed in claim 1 is characterized in that, described grinding head support comprises four support arms, and described grinding head is positioned at each support arm below.
3. the cleaning device of grinding head assembly as claimed in claim 2 is characterized in that, the length of described scavenge pipe is identical with the length of described support arm.
4. the cleaning device of grinding head assembly as claimed in claim 3 is characterized in that, the length of described scavenge pipe is 45～60cm.
5. the cleaning device of grinding head assembly as claimed in claim 2 is characterized in that, the length of described scavenge pipe is greater than the length of described support arm.
6. the cleaning device of grinding head assembly as claimed in claim 1 is characterized in that, the quantity of described cleaning shower nozzle is 6～10.
7. the cleaning device of grinding head assembly as claimed in claim 1 is characterized in that, described scavenge pipe is communicated with a main pipe rail.
8. the cleaning device of grinding head assembly as claimed in claim 7 is characterized in that, described main pipe rail is the deionized water pipeline.
9. chemical-mechanical grinding device, comprise a plurality of grinding pads, the grinding head assembly, and a plurality of cleaning devices that are fixed between the adjacent grinding pad, described cleaning device is used to clean described grinding head assembly, a plurality of grinding heads that described grinding head assembly comprises the grinding head support and is connected and is positioned at described grinding head support below with described grinding head support, it is characterized in that, described cleaning device comprises scavenge pipe and by a plurality of cleaning shower nozzles of drawing on the described scavenge pipe, described cleaning shower nozzle and described grinding head and grinding head support are complementary, and make the cleaning fluid of described cleaning shower nozzle ejection can clean described grinding head and grinding head support.
10. chemical-mechanical grinding device as claimed in claim 9 is characterized in that, described grinding head support comprises four support arms, and described grinding head is positioned at described support arm below.
11. chemical-mechanical grinding device as claimed in claim 10 is characterized in that, the length of described scavenge pipe is identical with the length of described support arm.
12. chemical-mechanical grinding device as claimed in claim 11 is characterized in that, the length of described scavenge pipe is 45～60cm.
13. chemical-mechanical grinding device as claimed in claim 10 is characterized in that, the length of described scavenge pipe is greater than the length of described support arm.
14. chemical-mechanical grinding device as claimed in claim 9 is characterized in that, described scavenge pipe is fixed between the described adjacent grinding pad.
15. chemical-mechanical grinding device as claimed in claim 9 is characterized in that, the quantity of described cleaning shower nozzle is 6～10.
16. chemical-mechanical grinding device as claimed in claim 9 is characterized in that, described scavenge pipe is communicated with a main pipe rail.
17. chemical-mechanical grinding device as claimed in claim 16 is characterized in that, described main pipe rail is the deionized water pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202106880U CN201559124U (en) | 2009-10-13 | 2009-10-13 | Grinding head assembly cleaning device and chemical mechanical grinding device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009202106880U CN201559124U (en) | 2009-10-13 | 2009-10-13 | Grinding head assembly cleaning device and chemical mechanical grinding device |
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| CN201559124U true CN201559124U (en) | 2010-08-25 |
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| CN2009202106880U Expired - Fee Related CN201559124U (en) | 2009-10-13 | 2009-10-13 | Grinding head assembly cleaning device and chemical mechanical grinding device |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102485424A (en) * | 2010-12-03 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Polishing device and abnormality treatment method thereof |
| CN102553849A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Cleaning device and cleaning method for fixed grinding particle polishing pad |
| CN103721967A (en) * | 2013-12-31 | 2014-04-16 | 镇江市港南电子有限公司 | Self-cleaning grinding upper disc structure |
| CN103878668A (en) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | Washing device used for chemical mechanical polishing equipment |
| CN104308720A (en) * | 2014-08-27 | 2015-01-28 | 上海华力微电子有限公司 | Grinding head washing device, grinding equipment and washing method |
| CN104384127A (en) * | 2014-10-11 | 2015-03-04 | 清华大学 | Washing device used for washing trimmer |
| CN105081959A (en) * | 2014-05-19 | 2015-11-25 | 旺宏电子股份有限公司 | Flattening device and flattening method using same |
| CN109262446A (en) * | 2017-07-12 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of chemical and mechanical grinding method and chemical mechanical polishing device |
| CN110497298A (en) * | 2019-08-28 | 2019-11-26 | 西安奕斯伟硅片技术有限公司 | A kind of burnishing device and method |
| CN112170276A (en) * | 2020-08-28 | 2021-01-05 | 富乐德科技发展（大连）有限公司 | Cleaning process for parts in grinding device in semiconductor equipment |
| CN112497048A (en) * | 2020-11-23 | 2021-03-16 | 华虹半导体(无锡)有限公司 | Chemical mechanical polishing apparatus and method |
| CN112706061A (en) * | 2020-12-23 | 2021-04-27 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Protection device, polishing equipment and control method of protection device |
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2009
- 2009-10-13 CN CN2009202106880U patent/CN201559124U/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102485424B (en) * | 2010-12-03 | 2015-01-21 | 中芯国际集成电路制造(北京)有限公司 | Polishing device and abnormality treatment method thereof |
| CN102485424A (en) * | 2010-12-03 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Polishing device and abnormality treatment method thereof |
| CN102553849B (en) * | 2010-12-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Cleaning device and cleaning method for fixed grinding particle polishing pad |
| CN102553849A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Cleaning device and cleaning method for fixed grinding particle polishing pad |
| CN103878668A (en) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | Washing device used for chemical mechanical polishing equipment |
| CN103721967A (en) * | 2013-12-31 | 2014-04-16 | 镇江市港南电子有限公司 | Self-cleaning grinding upper disc structure |
| CN103721967B (en) * | 2013-12-31 | 2016-03-09 | 镇江市港南电子有限公司 | A kind of self-cleaning grinding upper disc structure |
| CN105081959A (en) * | 2014-05-19 | 2015-11-25 | 旺宏电子股份有限公司 | Flattening device and flattening method using same |
| CN104308720A (en) * | 2014-08-27 | 2015-01-28 | 上海华力微电子有限公司 | Grinding head washing device, grinding equipment and washing method |
| CN104384127A (en) * | 2014-10-11 | 2015-03-04 | 清华大学 | Washing device used for washing trimmer |
| CN109262446A (en) * | 2017-07-12 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of chemical and mechanical grinding method and chemical mechanical polishing device |
| CN110497298A (en) * | 2019-08-28 | 2019-11-26 | 西安奕斯伟硅片技术有限公司 | A kind of burnishing device and method |
| CN112170276A (en) * | 2020-08-28 | 2021-01-05 | 富乐德科技发展（大连）有限公司 | Cleaning process for parts in grinding device in semiconductor equipment |
| CN112497048A (en) * | 2020-11-23 | 2021-03-16 | 华虹半导体(无锡)有限公司 | Chemical mechanical polishing apparatus and method |
| CN112706061A (en) * | 2020-12-23 | 2021-04-27 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Protection device, polishing equipment and control method of protection device |
| CN112706061B (en) * | 2020-12-23 | 2023-02-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Protection device, polishing equipment and control method of protection device |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130226 |
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Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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Effective date of registration: 20130226 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100825 Termination date: 20181013 |