CN102371532B - Reworking method for chemical mechanical lapping process - Google Patents
Reworking method for chemical mechanical lapping process Download PDFInfo
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- CN102371532B CN102371532B CN 201010261562 CN201010261562A CN102371532B CN 102371532 B CN102371532 B CN 102371532B CN 201010261562 CN201010261562 CN 201010261562 CN 201010261562 A CN201010261562 A CN 201010261562A CN 102371532 B CN102371532 B CN 102371532B
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Abstract
The invention discloses a reworking method for a chemical mechanical lapping process. The method comprises the following steps of: providing chemical mechanical lapping equipment, wherein the chemical mechanical lapping equipment comprises a first lapping platform, a second lapping platform and a third lapping platform, a first chip is arranged on the third lapping platform, a second chip is arranged above the second lapping platform, and a third chip is arranged above the first lapping platform; and spraying lapping liquid on the surface of the first chip to remove the defect on the surface of the first chip, and blowing gas or deionized water on the surfaces of the second chip and the third chip respectively. By the reworking method, the chips waited on the second lapping platform and the first lapping platform can be prevented from being polluted, and the yield of a semiconductor device is improved.
Description
Technical field
The present invention relates to integrated circuit and manufacture field, particularly relate to a kind of reworking method of chemical mechanical milling tech.
Background technology
Develop rapidly along with super large-scale integration, integrated circuit fabrication process becomes and becomes increasingly complex with meticulous, in order to improve integrated level, reduce manufacturing cost, the size of semiconductor devices reduces day by day, plane routing has been difficult to meet the requirement that the semiconductor devices high density distributes, can only adopt polylaminate wiring technique, further improves the integration density of semiconductor devices.Because multilayer interconnection or the larger deposition process of depth of cracking closure have caused the excessive fluctuating of wafer surface, cause the difficulty that photoetching process focuses on, make the control ability to live width weaken, reduced the uniformity of live width on whole wafer.For this reason, need to carry out planarization to irregular wafer surface.At present, cmp (Chemical Mechanical Polishing, CMP) be the best approach of reaching overall planarization, especially, after semiconductor fabrication process enters submicrometer field, cmp has become an indispensable Manufacturing Techniques.
At present, usually adopt chemical-mechanical grinding device, also referred to as grinder station or polishing machine platform, carry out chemical mechanical milling tech.Described chemical-mechanical grinding device comprises the first grinding plate (Platen 1), the second grinding plate (Platen 2), the 3rd grinding plate (Platen 3) and for the transfer platform (also referred to as initial bit) of loading and unloading wafer.All wafers that enter into chemical-mechanical grinding device must first be sent to the first grinding plate through described transfer platform, are resent to the second grinding plate, just can be sent to afterwards the 3rd grinding plate, finally by the transfer platform, shift out described chemical-mechanical grinding device.Be pasted with respectively the first grinding pad, the second grinding pad and the 3rd grinding pad on described the first grinding plate, the second grinding plate and the 3rd grinding plate.
At present, usually chemical mechanical milling tech being divided into to three phases carries out: the first stage of described chemical mechanical milling tech carries out on the first grinding plate of described chemical-mechanical grinding device, the described first stage grinds also referred to as roughing, the described first stage is utilized larger grinding rate (Removal Rate, RR) remove the most metal level of dielectric layer top, form preliminary planarization; The second stage of described chemical mechanical milling tech is carried out on the second grinding plate, and described second stage is ground also referred to as fine finishining, and in order accurately to control grinding endpoint, described second stage is removed whole metal levels of dielectric layer top with less grinding rate; The phase III of described chemical mechanical milling tech carries out on the 3rd grinding plate, the described phase III is also referred to as spending (over polish) stage of grinding, the described phase III is to be completely removed in order to ensure the metal level above dielectric layer, and remove barrier layer (barrier) and a certain amount of dielectric layer, further to improve degree of planarization.Wherein, first stage and second stage can be used identical lapping liquid, and the main purpose of this lapping liquid is to remove metal level (for example copper); And the composition of the lapping liquid that phase III and the first two stage are used is different, the main purpose of the lapping liquid that the phase III is used is to remove barrier layer and dielectric layer.The Chinese patent application that the more information of relevant chemical mechanical milling tech can be also 200810226330.7 referring to application number.
But, also often run into another situation in actual production, carried out the wafer of chemical mechanical milling tech, because the stand-by period (Q-time) is long or wafer surface is attached with the reasons such as particle (particle) need to do over again (rework), need to re-start chemical mechanical milling tech one time, to remove metal level and the dielectric layer of wafer surface segment thickness, thereby the defect of wafer surface is got rid of, avoided occurring metal erosion defect (metal corrosion defect).General, in the process of rework of chemical mechanical milling tech, without on described the first grinding plate and the second grinding plate, carrying out grinding technics, only need on described the 3rd grinding plate, to the wafer of doing over again, be ground, and adopt the lapping liquid (main purpose of this lapping liquid is to remove dielectric layer) that the phase III used, with removal the do over again metal level of wafer surface segment thickness and the dielectric layer of segment thickness.
Specifically, when having a plurality of wafers to do over again, the wafer of doing over again due to all need must be sent to the first grinding plate through the transfer platform, be resent to the second grinding plate, finally just can be sent to the 3rd grinding plate, therefore, the reworking method of existing chemical mechanical milling tech generally includes following process: at first, the first wafer is sent on the first grinding plate; Then, the first wafer is sent to the second grinding plate by the first grinding plate, the second wafer is sent to the first grinding plate simultaneously; Then, described the first wafer is sent to the 3rd grinding plate by the second grinding plate, the second wafer is sent to the second grinding plate by the first grinding plate simultaneously, the 3rd wafer is sent on the first grinding plate simultaneously.That is to say, when described the first wafer carries out milled processed on the 3rd grinding plate, described the second wafer and the 3rd wafer are waited for respectively on the second grinding plate and the first grinding plate, first wafer such as only have to have carried out on the 3rd grinding plate after the milled processed process removed the defect of the first wafer surface, and when the 3rd grinding plate is removed, the second wafer could move on to the 3rd grinding plate from the second grinding plate and carry out milled processed by the first wafer.
Yet, in existing cmp reworking method, the second wafer and the 3rd wafer are bide one's time waiting, to described the second wafer and the 3rd wafer, do not spray deionized water or gas, that is to say, described the second wafer and the 3rd wafer do not carry out any isolation processing, various pollutants on described cmp platform (for example corrosive liquid or various particle) very likely splash to the second wafer and the 3rd wafer surface, thereby pollute the second wafer and the 3rd wafer, cause the yield of semiconductor devices to descend.
Summary of the invention
The invention provides a kind of reworking method of chemical mechanical milling tech, in the reworking method that solves existing chemical mechanical milling tech, wafer on the first grinding plate and the second grinding plate is easily contaminated, and causes the problem of the yield decline of semiconductor devices.
For solving the problems of the technologies described above, the invention provides a kind of reworking method of chemical mechanical milling tech, comprise: chemical-mechanical grinding device is provided, described chemical-mechanical grinding device comprises the first grinding plate, the second grinding plate and the 3rd grinding plate, be provided with the first wafer on described the 3rd grinding plate, described the second grinding plate top is provided with the second wafer, and described the first grinding plate top is provided with the 3rd wafer; To the surface sprinkling lapping liquid of described the first wafer to remove the defect of described the first wafer surface, simultaneously, respectively to surperficial blowing gas or the deionized water of described the second wafer and the 3rd wafer.
Optionally, in the reworking method of described chemical mechanical milling tech, described gas or deionized water are with the jet surface of described the second wafer and the 3rd wafer of bottom-up direction.
Optionally, in the reworking method of described chemical mechanical milling tech, during to the surperficial blowing gas of described the second wafer and the 3rd wafer, described gas is nitrogen or helium.
Optionally, in the reworking method of described chemical mechanical milling tech, the flow of described gas is 100～200sccm, and the pressure of described gas is 5～20Torr.
Optionally, in the reworking method of described chemical mechanical milling tech, while to the surface of described the second wafer and the 3rd wafer, jetting deionized water, the flow of described deionized water is 300～1000mL/min.
Optionally, in the reworking method of described chemical mechanical milling tech, to time of the surface sprinkling lapping liquid of described the first wafer be 3～20sec.
Optionally, in the reworking method of described chemical mechanical milling tech, to the surperficial blowing gas of described the second wafer and the 3rd wafer or the time of deionized water, be 3～20sec.
Optionally, in the reworking method of described chemical mechanical milling tech, after the step to the surface sprinkling lapping liquid of described the first wafer with the defect of removing the first wafer surface, also comprise: described the first wafer is shifted out to chemical-mechanical grinding device; Simultaneously, the second wafer is sent to the 3rd grinding plate and to the surface sprinkling lapping liquid of the second wafer to remove the defect of the second wafer surface; Simultaneously, described the 3rd wafer is sent to the second grinding plate and to surperficial blowing gas or the deionized water of the 3rd wafer.
Optionally, in the reworking method of described chemical mechanical milling tech, described the 3rd wafer be sent to the second grinding plate and to the surperficial blowing gas of the 3rd wafer or deionized water the time, also comprise: the 4th wafer being sent to described the first grinding plate and to surperficial blowing gas or the deionized water of the 4th wafer.
Optionally, in the reworking method of described chemical mechanical milling tech, described chemical-mechanical grinding device also comprises the first grinding fluid arm that is arranged at described the first grinding plate top, utilizes surperficial blowing gas or the deionized water of described the first grinding fluid arm to described the 3rd wafer.
Optionally, in the reworking method of described chemical mechanical milling tech, described chemical-mechanical grinding device also comprises the second grinding fluid arm that is arranged at described the second grinding plate top, utilizes surperficial blowing gas or the deionized water of described the second grinding fluid arm to described the second wafer.
Optionally, in the reworking method of described chemical mechanical milling tech, described chemical-mechanical grinding device also comprises the 3rd grinding fluid arm that is arranged at described the 3rd grinding plate top, utilizes the surface sprinkling lapping liquid of described the 3rd grinding fluid arm to described the first wafer.
Owing to having adopted above technical scheme, compared with prior art, the present invention has the following advantages:
The present invention to the surface sprinkling lapping liquid of the first wafer on the 3rd grinding plate when removing the defect of the first wafer surface; the 3rd wafer surface blowing gas or the deionized water of waiting on the second wafer of also waiting for to the second grinding plate and the first grinding plate; to guarantee that the various pollutants on chemical-mechanical grinding device can not splash to the second wafer and the 3rd wafer surface; prevent that the wafer of waiting on the second grinding plate and the first grinding plate is contaminated, improved the yield of semiconductor devices.
The accompanying drawing explanation
The flow chart of the reworking method of the chemical mechanical milling tech that Fig. 1 provides for the embodiment of the present invention;
The top view that Fig. 2 is the chemical-mechanical grinding device that adopts of the embodiment of the present invention;
The schematic perspective view that Fig. 3 is the first grinding plate in Fig. 2;
The schematic perspective view that Fig. 4 is the second grinding plate in Fig. 2;
The schematic perspective view that Fig. 5 is the 3rd grinding plate in Fig. 2.
The specific embodiment
According to background technology, in existing cmp reworking method, when the first wafer on the 3rd grinding plate carries out milled processed, to the second wafer and the 3rd wafer waited on the second grinding plate and the first grinding plate, do not carry out any isolation processing, make the various pollutants on the cmp platform very likely splash to the second wafer and the 3rd wafer surface, thereby pollute the second wafer and the 3rd wafer, cause the yield of semiconductor devices to descend.Therefore, the invention provides a kind of reworking method of chemical mechanical milling tech, the method to the surface sprinkling lapping liquid of the first wafer on the 3rd grinding plate when removing the defect of the first wafer surface, also to the 3rd wafer surface blowing gas or the deionized water of waiting on the second wafer of waiting on the second grinding plate and the first grinding plate, to guarantee that various pollutants can not splash to the second wafer and the 3rd wafer surface, prevent that the wafer of waiting on the second grinding plate and the first grinding plate is contaminated, be conducive to improve the yield of semiconductor devices.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Please refer to Fig. 1, the flow chart of the reworking method of the chemical mechanical milling tech that it provides for the embodiment of the present invention, in conjunction with this Fig. 2, the method comprises the following steps:
Step S1, and in conjunction with Fig. 2 to Fig. 5, at first, chemical-mechanical grinding device 100 is provided, described chemical-mechanical grinding device 100 comprises the first grinding plate 110, the second grinding plate 120 and the 3rd grinding plate 130, be provided with the first wafer 10 on described the 3rd grinding plate 130, described the second grinding plate 120 tops are provided with the second wafer 20, and described the first grinding plate 110 tops are provided with the 3rd wafer 30.
Described chemical-mechanical grinding device 100 also comprises the transfer platform 140 for loading and unloading wafer, the wafer that all need are done over again must first be sent to the first grinding plate 110 through transfer platform 140, be resent to the second grinding plate 120, just can be sent to afterwards the 3rd grinding plate 130, finally by transfer platform 140, shift out chemical-mechanical grinding device 100.Wherein, be pasted with respectively the first grinding pad 112, the second grinding pad 122 and the 3rd grinding pad 132 on the first grinding plate 110, the second grinding plate 120 and the 3rd grinding plate 130.In addition, described chemical-mechanical grinding device 100 also comprises grinding head support 150, and described grinding head support 150 is rotatable, and it roughly is cross, and described grinding head support 150 has four support arms, and the below of each support arm is connected with a grinding head.
As shown in Figure 2, described chemical-mechanical grinding device 100 also comprises the first grinding fluid arm 113, the second grinding fluid arm 123 and the 3rd grinding fluid arm 133, wherein, the first grinding fluid arm 113 is arranged at the top of the first grinding plate 110, the second grinding fluid arm 123 is arranged at the top of the second grinding plate 120, and the 3rd grinding fluid arm 133 is arranged at the top of the 3rd grinding plate 130.Can utilize the first grinding fluid arm 113 to the surperficial blowing gas of the 3rd wafer 30 or deionized water on the first grinding plate 110, utilize the second grinding fluid arm 123 to the surperficial blowing gas of the second wafer 20 or deionized water on the second grinding plate 120, utilize the 3rd grinding fluid arm 133 to the first wafer 10 surface sprinkling lapping liquids on the 3rd lapping liquid platform 130.Three grinding fluid arms that utilize existing milling apparatus to carry can complete the process of rework of the chemical grinding technique that the embodiment of the present invention provides, and without extra procuring equipment, have reduced production cost.Certainly, the present invention originally is not limited to this, according to actual needs, also can adopt surperficial blowing gas or the deionized water of alternate manner to the wafer on the second grinding plate 120 and the first grinding plate 110.
Then perform step S2, to the surface sprinkling lapping liquid of the first wafer 10 to remove the defect on the first wafer 10 surfaces; Simultaneously, to surperficial blowing gas or the deionized water of the second wafer 20; Simultaneously, to surperficial blowing gas or the deionized water of the 3rd wafer 30.
Specifically, as shown in Figure 3, during to the surface sprinkling lapping liquid of the first wafer 10, first wafer 10 that can grind is attached on the 3rd grinding head 131 of chemical machinery equipment, the to be ground of this first wafer 10 faces down and contacts counterrotating the 3rd grinding pad 132, the downforce that the 3rd grinding head 131 provides is pressed onto this first wafer 10 on the 3rd grinding pad 132, and when the 3rd grinding plate 130 rotation, the 3rd grinding head 131 also carries out relative motion.Simultaneously, the lapping liquid (main purpose of this lapping liquid is to remove dielectric layer) that phase III is used is transported on the 3rd grinding pad 132 by the 3rd grinding fluid arm 133, and be evenly distributed on the 3rd grinding pad 132 by centrifugal force, the lapping liquid that process of rework is used includes chemical mordant and abrasive grains, chemical reaction by chemical mordant and described surface to be ground generates softer easy to be removed material, then by mechanical friction, the material that these are softer removes from the surface of polished the first wafer 10, thereby remove the metal level of the first wafer 10 surface portion thickness of doing over again and the dielectric layer of segment thickness, with the defect by the first wafer 10 surfaces, get rid of, avoid occurring metal erosion defect (metal corrosion defect), improve the reliability of semiconductor devices.
Carrying out shown in Fig. 3 in step, as shown in Figure 4, the second wafer 20 is arranged on the top of the second grinding plate 120, the second wafer 20 is attached on the second grinding head 121 of chemical machinery equipment, and to surperficial blowing gas or the deionized water of the second wafer 20, can be not contaminated with the surface of guaranteeing the second wafer 20.Preferably, described the second wafer 20 is in the rise state, the second wafer 20 is to be positioned at the second grinding plate 120 tops, makes the second wafer 20 not contact the second grinding pad 122, and described gas or deionized water are with the jet surface of the second wafer 20 of bottom-up direction.Second grinding fluid arm 123 that can utilize described chemical-mechanical grinding device 100 to carry, to surperficial blowing gas or the deionized water of the second wafer 20.
Carrying out shown in Fig. 3 and Fig. 4 in step, as shown in Figure 5, the 3rd wafer 30 is arranged on the top of the first grinding plate 110, the 3rd wafer 30 is attached on the first grinding head 111 of chemical machinery equipment, and to surperficial blowing gas or the deionized water of the 3rd wafer 30, can be not contaminated with the surface of guaranteeing the 3rd wafer 30.Preferably, described the 3rd wafer 30 is in the rise state, and the 3rd wafer 30 does not contact the first grinding pad 112, the surface of direction winding-up the 3rd wafer 30 that described gas or deionized water are bottom-up.First grinding fluid arm 113 that can utilize described chemical-mechanical grinding device 100 to carry, to surperficial blowing gas or the deionized water of the 3rd wafer 30.
In the present embodiment, in the time of to the surface sprinkling lapping liquid of the first wafer 10, to the surface winding-up of the second wafer 20 be gas, described gas is preferably nitrogen or helium, described nitrogen and helium are comparatively pure, can not pollute the surface of the second wafer 20; The flow of described gas is preferably 100～200sccm, the pressure of described gas is preferably 5～20Torr, the Gas injection of above-mentioned flow and pressure is during to the second wafer 20 surperficial, neither can cause damage to the figure on the second wafer 20 too greatly due to pressure and flow, can guarantee again the second wafer 20 isolation are prevented to the pollutant on chemical-mechanical grinding device is attached to the second wafer 20 surfaces.Certainly, in other embodiments of the invention, in the time of to the surface sprinkling lapping liquid of the first wafer 10, also can be to the surface winding-up deionized water of the second wafer 20, described deionized water can be kept apart the second wafer 20 equally, avoids it contaminated.If, while to the surface of the second wafer 20, jetting deionized water, the flow of described deionized water is preferably 300～1000mL/min, this flow can guarantee that the figure of the second wafer 20 can not be damaged, and can guarantee again the second wafer 20 isolation.
Equally, in the present embodiment, in the time of to the surface sprinkling lapping liquid of the first wafer 10, to the surface winding-up of the 3rd wafer 30 be gas, described gas is preferably nitrogen or helium, described nitrogen and helium are comparatively pure, can not pollute the surface of the 3rd wafer 30; The flow of described gas is preferably 100～200sccm, the pressure of described gas is preferably 5～20Torr, during Gas injection to the three wafers 30 of above-mentioned flow and pressure surperficial, neither can cause damage to the figure on the 3rd wafer 30 too greatly due to pressure and flow, can guarantee again the 3rd wafer 30 isolation are prevented to the pollutant on chemical-mechanical grinding device is attached to the 3rd wafer 30 surfaces.Certainly, in other embodiments of the invention, in the time of to the surface sprinkling lapping liquid of the first wafer 10, also can be to the surface winding-up deionized water of the 3rd wafer 30, described deionized water can be kept apart the 3rd wafer 30 equally, avoids it contaminated.While to the surface of the 3rd wafer 30, jetting deionized water, the flow of described deionized water is preferably 300～1000mL/min, and this flow can guarantee that the figure of the 3rd wafer 30 can not be damaged, and can guarantee again the 3rd wafer 30 isolation.
In the present embodiment, to time of the surface sprinkling lapping liquid of the first wafer 10, to time of the surperficial blowing gas of the second wafer 20 or deionized water and be identical to the surperficial blowing gas of the 3rd wafer 30 or the time of deionized water, the process time of the wafer on the first grinding plate 110, the second grinding plate 120 and the 3rd grinding plate 130 is identical.Preferably, to time of the surface sprinkling lapping liquid of the first wafer 10, to time of the surperficial blowing gas of the second wafer 20 or deionized water and be 3～20sec to the surperficial blowing gas of the 3rd wafer 30 or the time of deionized water.This time can guarantee that part metals layer and the part dielectric layer on the first wafer 10 is removed, the defect on these the first wafer 10 surfaces is all got rid of, improve the reliability of semiconductor devices, and can avoid affecting due to this overlong time the production capacity of chemical-mechanical grinding device.Certainly, the metal level that those skilled in the art also can remove according to actual needs and the thickness of dielectric layer, the corresponding adjustment to the time of the surface sprinkling lapping liquid of the first wafer 10.
Especially, after execution step S2, to the surface sprinkling lapping liquid of the first wafer 10 with after the defect of removing the first wafer 10 surfaces, the first wafer 10 is shifted out to chemical-mechanical grinding device through transfer platform 140, put in the wafer case of memory chip; Simultaneously, the second wafer 20 is sent to the 3rd grinding plate 130 and to the surface sprinkling lapping liquid of the second wafer 20 to remove the defect on the second wafer 20 surfaces; Simultaneously, the 3rd wafer 30 is sent to the second grinding plate 120 and to surperficial blowing gas or the deionized water of the 3rd wafer 30, in the process to be ground at the 3rd wafer 30 etc., the surface of the 3rd wafer 30 is isolated, prevent that the pollutant on chemical-mechanical grinding device is attached to the 3rd wafer 30 surfaces.
When the quantity of the wafer of doing over again when needs only is three, after removing the defect on the second wafer 20 surfaces, the second wafer 20 can be shifted out to chemical-mechanical grinding device through transfer platform 140, put in the wafer case of memory chip; Simultaneously, the 3rd wafer 30 is sent to the 3rd grinding plate 130 and to the surface sprinkling lapping liquid of the 3rd wafer 30, to remove the defect on the 3rd wafer 30 surfaces.After the defect of removing the 3rd wafer 30 surfaces, the 3rd wafer 30 can be shifted out to described chemical-mechanical grinding device through transfer platform 140, put in the wafer case of memory chip.
In other embodiments of the invention, if the quantity of the wafer that need to do over again is during more than three, the 3rd wafer 30 is sent to the second grinding plate and to the surperficial blowing gas of the 3rd wafer 30 or deionized water the time, also comprise: the 4th wafer that will be to be done over again is sent to the first grinding plate 110 and, to surperficial blowing gas or the deionized water of the 4th wafer 40, to prevent the pollutant on chemical-mechanical grinding device, is attached to the 4th wafer 40 surfaces.Next, can repeat the process of transmission wafer and grinding wafers, this process and foregoing description are similar, and those skilled in the art can learn the processing procedure of other wafer according to foregoing description, do not repeat them here.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (11)
1. the reworking method of a chemical mechanical milling tech comprises:
Chemical-mechanical grinding device is provided, described chemical-mechanical grinding device comprises the first grinding plate, the second grinding plate and the 3rd grinding plate, be provided with the first wafer on described the 3rd grinding plate, described the second grinding plate top is provided with the second wafer, and described the first grinding plate top is provided with the 3rd wafer;
To the surface sprinkling lapping liquid of described the first wafer to remove the defect of described the first wafer surface, simultaneously, respectively to surperficial blowing gas or the deionized water of described the second wafer and the 3rd wafer;
Described the first wafer is shifted out to chemical-mechanical grinding device; Simultaneously, described the second wafer is sent to the 3rd grinding plate and to the surface sprinkling lapping liquid of the second wafer to remove the defect of the second wafer surface; Simultaneously, described the 3rd wafer is sent to the second grinding plate and to surperficial blowing gas or the deionized water of the 3rd wafer.
2. the reworking method of chemical mechanical milling tech as claimed in claim 1, is characterized in that, described gas or deionized water are with the jet surface of described the second wafer and the 3rd wafer of bottom-up direction.
3. the reworking method of chemical mechanical milling tech as claimed in claim 1, is characterized in that, during to the surperficial blowing gas of described the second wafer and the 3rd wafer, described gas is nitrogen or helium.
4. the reworking method of chemical mechanical milling tech as claimed in claim 3, is characterized in that, the flow of described gas is 100～200sccm, and the pressure of described gas is 5～20Torr.
5. the reworking method of chemical mechanical milling tech as claimed in claim 1, is characterized in that, while to the surface of described the second wafer and the 3rd wafer, jetting deionized water, the flow of described deionized water is 300～1000mL/min.
6. the reworking method of chemical mechanical milling tech as claimed in claim 1, is characterized in that, to time of the surface sprinkling lapping liquid of described the first wafer be 3～20sec.
7. the reworking method of chemical mechanical milling tech as claimed in claim 6, is characterized in that, to the surperficial blowing gas of described the second wafer and the 3rd wafer or the time of deionized water, is 3～20sec.
8. the reworking method of chemical mechanical milling tech as claimed in claim 1, it is characterized in that, described the 3rd wafer be sent to the second grinding plate and to the surperficial blowing gas of the 3rd wafer or deionized water the time, also comprise: the 4th wafer being sent to described the first grinding plate and to surperficial blowing gas or the deionized water of the 4th wafer.
9. the reworking method of chemical mechanical milling tech as claimed in claim 1, it is characterized in that, described chemical-mechanical grinding device also comprises the first grinding fluid arm that is arranged at described the first grinding plate top, utilizes surperficial blowing gas or the deionized water of described the first grinding fluid arm to described the 3rd wafer.
10. the reworking method of chemical mechanical milling tech as claimed in claim 1, it is characterized in that, described chemical-mechanical grinding device also comprises the second grinding fluid arm that is arranged at described the second grinding plate top, utilizes surperficial blowing gas or the deionized water of described the second grinding fluid arm to described the second wafer.
11. the reworking method of chemical mechanical milling tech as claimed in claim 1, it is characterized in that, described chemical-mechanical grinding device also comprises the 3rd grinding fluid arm that is arranged at described the 3rd grinding plate top, utilizes the surface sprinkling lapping liquid of described the 3rd grinding fluid arm to described the first wafer.
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| CN105081957A (en) * | 2014-05-14 | 2015-11-25 | 和舰科技(苏州)有限公司 | Chemical mechanical polishing method for wafer planarization production |
| CN105364699B (en) * | 2014-07-25 | 2020-08-04 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method and chemical mechanical polishing equipment |
| CN109262446B (en) * | 2017-07-12 | 2021-03-19 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method and chemical mechanical polishing device |
| CN109434671A (en) * | 2018-10-11 | 2019-03-08 | 德淮半导体有限公司 | A kind of wafer processing and processing method |
| CN114473859A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Wafer polishing apparatus and wafer polishing method |
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| CN101318308A (en) * | 2007-06-08 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding apparatus |
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