CN102371532A - Reworking method for chemical mechanical lapping process - Google Patents
Reworking method for chemical mechanical lapping process Download PDFInfo
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- CN102371532A CN102371532A CN2010102615623A CN201010261562A CN102371532A CN 102371532 A CN102371532 A CN 102371532A CN 2010102615623 A CN2010102615623 A CN 2010102615623A CN 201010261562 A CN201010261562 A CN 201010261562A CN 102371532 A CN102371532 A CN 102371532A
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Abstract
The invention discloses a reworking method for a chemical mechanical lapping process. The method comprises the following steps of: providing chemical mechanical lapping equipment, wherein the chemical mechanical lapping equipment comprises a first lapping platform, a second lapping platform and a third lapping platform, a first chip is arranged on the third lapping platform, a second chip is arranged above the second lapping platform, and a third chip is arranged above the first lapping platform; and spraying lapping liquid on the surface of the first chip to remove the defect on the surface of the first chip, and blowing gas or deionized water on the surfaces of the second chip and the third chip respectively. By the reworking method, the chips waited on the second lapping platform and the first lapping platform can be prevented from being polluted, and the yield of a semiconductor device is improved.
Description
Technical field
The present invention relates to integrated circuit and make the field, particularly relate to a kind of reworking method of chemical mechanical milling tech.
Background technology
Develop rapidly along with super large-scale integration; Integrated circuit fabrication process becomes and becomes increasingly complex with meticulous, in order to improve integrated level, reduces manufacturing cost; Size of semiconductor device reduces day by day; Plane routing has been difficult to satisfy semiconductor devices high density distribution requirements, can only adopt polylaminate wiring technique, further improves the integration density of semiconductor devices.Because multilayer interconnection or the bigger deposition process of filling depth ratio have caused the excessive fluctuating of wafer surface, cause the difficulty that photoetching process focuses on, feasible control ability to live width weakens, and has reduced the uniformity of live width on the entire wafer.For this reason, need carry out planarization to irregular wafer surface.At present; Cmp (Chemical Mechanical Polishing; CMP) be the best approach of reaching overall planarization, especially after semiconductor fabrication process got into submicrometer field, cmp had become an indispensable manufacture craft technology.
At present, adopt chemical-mechanical grinding device usually, be also referred to as grinder station or polishing machine platform carries out chemical mechanical milling tech.Said chemical-mechanical grinding device comprises first grinding plate (Platen 1), second grinding plate (Platen 2), the 3rd grinding plate (Platen 3) and the transfer platform (being also referred to as initial bit) that is used for loading and unloading wafer.All wafers that enter into chemical-mechanical grinding device must be sent to first grinding plate through said transfer platform earlier, are resent to second grinding plate, just can be sent to the 3rd grinding plate afterwards, after the transfer platform shifts out said chemical-mechanical grinding device.Be pasted with first grinding pad, second grinding pad and the 3rd grinding pad on said first grinding plate, second grinding plate and the 3rd grinding plate respectively.
At present; Usually chemical mechanical milling tech being divided into three phases carries out: the phase I of said chemical mechanical milling tech carries out on first grinding plate of said chemical-mechanical grinding device; The said phase I is also referred to as roughing and grinds; The grinding rate that said phase I utilization is bigger (Removal Rate, RR) the most metal level of removal dielectric layer top forms preliminary planarization; The second stage of said chemical mechanical milling tech is carried out on second grinding plate, and said second stage is also referred to as fine finishining and grinds, and in order accurately to control grinding endpoint, said second stage is removed whole metal levels of dielectric layer top with less grinding rate; The phase III of said chemical mechanical milling tech carries out on the 3rd grinding plate; The said phase III was also referred to as grinding (over polish) stage; The said phase III is removed in order to ensure the metal level of dielectric layer top fully; And remove barrier layer (barrier) and a certain amount of dielectric layer, with further raising degree of planarization.Wherein, the phase I can be used identical lapping liquid with second stage, and the main purpose of this lapping liquid is to remove metal level (for example copper); And the composition of the lapping liquid that phase III and preceding two stages use is different, and the main purpose of the lapping liquid that the phase III uses is to remove barrier layer and dielectric layer.The more information of relevant chemical mechanical milling tech also can be 200810226330.7 one Chinese patent application referring to application number.
But; In actual production, also often run into other a kind of situation, promptly finished the wafer of chemical mechanical milling tech, because long or wafer surface of stand-by period (Q-time) is attached with particle reasons such as (particle) need do over again (rework); Promptly need carry out one time chemical mechanical milling tech again; With the metal level and the dielectric layer of removal wafer surface segment thickness, thereby the defective of wafer surface is got rid of, avoided occurring metal erosion defective (metal corrosion defect).General; In the process of rework of chemical mechanical milling tech; Need not on said first grinding plate and second grinding plate, to carry out grinding technics; Only need on said the 3rd grinding plate, grind, and adopt the lapping liquid (main purpose of this lapping liquid is to remove dielectric layer) that the phase III uses, with removal the do over again metal level of wafer surface segment thickness and the dielectric layer of segment thickness the wafer of doing over again.
Specifically; When a plurality of wafers need be done over again,, be resent to second grinding plate because all wafers that need do over again must be sent to first grinding plate through the transfer platform; Just can be sent to the 3rd grinding plate at last; Therefore, the reworking method of existing chemical mechanical milling tech generally includes following process: at first, first wafer is sent on first grinding plate; Then, first wafer is sent to second grinding plate by first grinding plate, simultaneously second wafer is sent to first grinding plate; Then, said first wafer is sent to the 3rd grinding plate by second grinding plate, simultaneously second wafer is sent to second grinding plate by first grinding plate, simultaneously the 3rd wafer is sent on first grinding plate.That is to say; When said first wafer carries out milled processed on the 3rd grinding plate; Said second wafer and the 3rd wafer are waited on second grinding plate and first grinding plate respectively; First wafer such as have only after finishing the milled processed process on the 3rd grinding plate and having removed the defective of first wafer surface, and with first wafer when the 3rd grinding plate is removed, second wafer could move on to the 3rd grinding plate from second grinding plate and carry out milled processed.
Yet; In existing cmp reworking method; Second wafer and the 3rd wafer are bide one's time waiting, and spray deionized water or gas to said second wafer and the 3rd wafer, that is to say; Said second wafer and the 3rd wafer do not carry out any isolation processing; All contaminations on the said cmp platform (for example corrosive liquid or various particle) very likely splashes to second wafer and the 3rd wafer surface, thereby pollutes second wafer and the 3rd wafer, causes the yield of semiconductor devices to descend.
Summary of the invention
The present invention provides a kind of reworking method of chemical mechanical milling tech; In the reworking method that solves existing chemical mechanical milling tech; Wafer on first grinding plate and second grinding plate is contaminated easily, and causes the problem of the yield decline of semiconductor devices.
For solving the problems of the technologies described above; The present invention provides a kind of reworking method of chemical mechanical milling tech; Comprise: chemical-mechanical grinding device is provided, and said chemical-mechanical grinding device comprises first grinding plate, second grinding plate and the 3rd grinding plate, and said the 3rd grinding plate is provided with first wafer; Said second grinding plate top is provided with second wafer, and said first grinding plate top is provided with the 3rd wafer; To the surface sprinkling lapping liquid of said first wafer to remove the defective of said first wafer surface, simultaneously, respectively to the surperficial blowing gas or the deionized water of said second wafer and the 3rd wafer.
Optional, in the reworking method of said chemical mechanical milling tech, said gas or deionized water are with the jet surface of said second wafer and the 3rd wafer of bottom-up direction.
Optional, in the reworking method of said chemical mechanical milling tech, when the surperficial blowing gas of said second wafer and the 3rd wafer, said gas is nitrogen or helium.
Optional, in the reworking method of said chemical mechanical milling tech, the flow of said gas is 100～200sccm, the pressure of said gas is 5～20Torr.
Optional, in the reworking method of said chemical mechanical milling tech, when the surface of said second wafer and the 3rd wafer winding-up deionized water, the flow of said deionized water is 300～1000mL/min.
Optional, in the reworking method of said chemical mechanical milling tech, be 3～20sec to the time of the surface sprinkling lapping liquid of said first wafer.
Optional, in the reworking method of said chemical mechanical milling tech, be 3～20sec to the surperficial blowing gas of said second wafer and the 3rd wafer or the time of deionized water.
Optional, in the reworking method of said chemical mechanical milling tech, after the surface sprinkling lapping liquid of said first wafer step, also comprise: said first wafer is shifted out chemical-mechanical grinding device with the defective of removing first wafer surface; Simultaneously, second wafer is sent to the 3rd grinding plate and to the surface sprinkling lapping liquid of second wafer to remove the defective of second wafer surface; Simultaneously, said the 3rd wafer is sent to second grinding plate and to the surperficial blowing gas or the deionized water of the 3rd wafer.
Optional; In the reworking method of said chemical mechanical milling tech; Said the 3rd wafer is sent to second grinding plate and to the surperficial blowing gas of the 3rd wafer or the deionized water time, also comprises: the 4th wafer is sent to said first grinding plate and to the surperficial blowing gas or the deionized water of the 4th wafer.
Optional; In the reworking method of said chemical mechanical milling tech; Said chemical-mechanical grinding device also comprises the first lapping liquid arm that is arranged at said first grinding plate top, utilizes surperficial blowing gas or the deionized water of the said first lapping liquid arm to said the 3rd wafer.
Optional; In the reworking method of said chemical mechanical milling tech; Said chemical-mechanical grinding device also comprises the second lapping liquid arm that is arranged at said second grinding plate top, utilizes surperficial blowing gas or the deionized water of the said second lapping liquid arm to said second wafer.
Optional; In the reworking method of said chemical mechanical milling tech; Said chemical-mechanical grinding device also comprises the 3rd lapping liquid arm that is arranged at said the 3rd grinding plate top, utilizes the surface sprinkling lapping liquid of said the 3rd lapping liquid arm to said first wafer.
Owing to adopted above technical scheme, compared with prior art, the present invention has the following advantages:
The surface sprinkling lapping liquid of first wafer of the present invention on the 3rd grinding plate is when removing the defective of first wafer surface; The 3rd wafer surface blowing gas or the deionized water of also on second wafer that second grinding plate is waited for and first grinding plate, waiting for; To guarantee that all contaminations on the chemical-mechanical grinding device can not splash to second wafer and the 3rd wafer surface; Prevent that the wafer of waiting on second grinding plate and first grinding plate is contaminated, improved the yield of semiconductor devices.
Description of drawings
Fig. 1 is the flow chart of the reworking method of the chemical mechanical milling tech that the embodiment of the invention provided;
Fig. 2 is the vertical view of the chemical-mechanical grinding device that the embodiment of the invention adopted;
Fig. 3 is the schematic perspective view of first grinding plate among Fig. 2;
Fig. 4 is the schematic perspective view of second grinding plate among Fig. 2;
Fig. 5 is the schematic perspective view of the 3rd grinding plate among Fig. 2.
The specific embodiment
According to background technology; In existing cmp reworking method; When first wafer on the 3rd grinding plate carried out milled processed, second wafer and the 3rd wafer on second grinding plate and first grinding plate, do not waited for carried out any isolation processing, made that all contaminations on the cmp platform very likely splashes to second wafer and the 3rd wafer surface; Thereby pollute second wafer and the 3rd wafer, cause the yield of semiconductor devices to descend.Therefore; The present invention provides a kind of reworking method of chemical mechanical milling tech; The surface sprinkling lapping liquid of first wafer of this method on the 3rd grinding plate is when removing the defective of first wafer surface; The 3rd wafer surface blowing gas or the deionized water of also on second wafer of waiting on second grinding plate and first grinding plate, waiting for; To guarantee that all contaminations can not splash to second wafer and the 3rd wafer surface, prevent that the wafer of waiting on second grinding plate and first grinding plate is contaminated, help improving the yield of semiconductor devices.
Do detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Please refer to Fig. 1, it is the flow chart of the reworking method of the chemical mechanical milling tech that the embodiment of the invention provided, and in conjunction with this Fig. 2, this method may further comprise the steps:
Step S1; And combine Fig. 2 to Fig. 5, at first, chemical-mechanical grinding device 100 is provided; Said chemical-mechanical grinding device 100 comprises first grinding plate 110, second grinding plate 120 and the 3rd grinding plate 130; Said the 3rd grinding plate 130 is provided with first wafer 10, and said second grinding plate 120 tops are provided with second wafer 20, and said first grinding plate 110 tops are provided with the 3rd wafer 30.
Said chemical-mechanical grinding device 100 also comprises the transfer platform 140 that is used for loading and unloading wafer; All wafers that need do over again must be sent to first grinding plate 110 through transfer platform 140 earlier; Be resent to second grinding plate 120; Just can be sent to the 3rd grinding plate 130 afterwards, after transfer platform 140 shifts out chemical-mechanical grinding device 100.Wherein, be pasted with first grinding pad 112, second grinding pad 122 and the 3rd grinding pad 132 on first grinding plate 110, second grinding plate 120 and the 3rd grinding plate 130 respectively.In addition, said chemical-mechanical grinding device 100 also comprises grinding head support 150, and said grinding head support 150 is rotatable, and it roughly is cross, and said grinding head support 150 has four support arms, and the below of each support arm is connected with a grinding head.
As shown in Figure 2; Said chemical-mechanical grinding device 100 also comprises the first lapping liquid arm 113, the second lapping liquid arm 123 and the 3rd lapping liquid arm 133; Wherein, The first lapping liquid arm 113 is arranged at the top of first grinding plate 110, and the second lapping liquid arm 123 is arranged at the top of second grinding plate 120, and the 3rd lapping liquid arm 133 is arranged at the top of the 3rd grinding plate 130.Three wafer 30 surperficial blowing gas or the deionized waters of the first lapping liquid arm 113 capable of using on first grinding plate 110; Utilize second wafer 20 surperficial blowing gas or the deionized waters of the second lapping liquid arm 123 on second grinding plate 120, utilize the first wafer 10 surface sprinkling lapping liquids of the 3rd lapping liquid arm 133 on the 3rd lapping liquid platform 130.Three lapping liquid arms that utilize existing milling apparatus to carry can be accomplished the process of rework of the chemical grinding technology that the embodiment of the invention provides, and need not extra procuring equipment, have reduced production cost.Certainly, the present invention originally is not limited to this, according to actual needs, also can adopt the surperficial blowing gas or the deionized water of the wafer of alternate manner on second grinding plate 120 and first grinding plate 110.
Then execution in step S2, to the surface sprinkling lapping liquid of first wafer 10 to remove the defective on first wafer, 10 surfaces; Simultaneously, to the surperficial blowing gas or the deionized water of second wafer 20; Simultaneously, to the surperficial blowing gas or the deionized water of the 3rd wafer 30.
Specifically; As shown in Figure 3, when the surface sprinkling lapping liquid of first wafer 10, on the 3rd grinding head 131 of first wafer 10 that can grind attached to chemical machinery equipment; This first wafer 10 to be ground faces down and contacts counterrotating the 3rd grinding pad 132; The downforce that the 3rd grinding head 131 provides is pressed onto this first wafer 10 on the 3rd grinding pad 132, and when 130 rotations of the 3rd grinding plate, the 3rd grinding head 131 also carries out relative motion.Simultaneously; The lapping liquid (main purpose of this lapping liquid is to remove dielectric layer) that phase III uses is transported on the 3rd grinding pad 132 through the 3rd lapping liquid arm 133; And be evenly distributed on the 3rd grinding pad 132 through centrifugal force; The employed lapping liquid of process of rework includes chemical mordant and abrasive grains, and softer easy the to be removed material of chemical reaction generation through chemical mordant and said surface to be ground removes from the surface of polished first wafer 10 through the mechanical friction material that these are softer then; Thereby remove the metal level of first wafer, the 10 surface portion thickness of doing over again and the dielectric layer of segment thickness; So that the defective on first wafer, 10 surfaces is got rid of, avoid occurring metal erosion defective (metal corrosion defect), improve the reliability of semiconductor devices.
When carrying out step shown in Figure 3; As shown in Figure 4; Second wafer 20 is set at the top of second grinding plate 120; On second grinding head 121 of second wafer 20 attached to chemical machinery equipment, and to the surperficial blowing gas or the deionized water of second wafer 20, can be not contaminated with the surface of guaranteeing second wafer 20.Preferable; Said second wafer 20 is to be in the rise state; Promptly second wafer 20 is to be positioned at second grinding plate, 120 tops, makes second wafer 20 not contact second grinding pad 122, and said gas or deionized water are with the jet surface of second wafer 20 of bottom-up direction.The second lapping liquid arm 123 that said chemical-mechanical grinding device 100 capable of using carries is to the surperficial blowing gas or the deionized water of second wafer 20.
When carrying out Fig. 3 and step shown in Figure 4; As shown in Figure 5; The 3rd wafer 30 is set at the top of first grinding plate 110; On first grinding head 111 of the 3rd wafer 30 attached to chemical machinery equipment, and to the surperficial blowing gas or the deionized water of the 3rd wafer 30, can be not contaminated with the surface of guaranteeing the 3rd wafer 30.Preferable, said the 3rd wafer 30 is to be in the rise state, and promptly the 3rd wafer 30 does not contact first grinding pad 112, the jet surface of the 3rd wafer 30 of the bottom-up direction of said gas or deionized water.The first lapping liquid arm 113 that said chemical-mechanical grinding device 100 capable of using carries is to the surperficial blowing gas or the deionized water of the 3rd wafer 30.
In the present embodiment, in the time of the surface sprinkling lapping liquid of first wafer 10, to the winding-up of the surface of second wafer 20 be gas, said gas is preferably nitrogen or helium, said nitrogen and helium are comparatively pure, can not pollute the surface of second wafer 20; The flow of said gas is preferably 100～200sccm; The pressure of said gas is preferably 5～20Torr; When the gas of above-mentioned flow and pressure is jetted to second wafer 20 surperficial; Neither can cause damage to the figure on second wafer 20 too greatly, can guarantee again second wafer 20 is isolated, prevent that the pollutant on the chemical-mechanical grinding device is attached to second wafer, 20 surfaces owing to pressure and flow.Certainly, in other embodiments of the invention, in the time of the surface sprinkling lapping liquid of first wafer 10, also can be to the surface of second wafer 20 winding-up deionized water, said deionized water can be kept apart second wafer 20 equally, avoids it contaminated.If when the surface of second wafer 20 winding-up deionized water, the flow of said deionized water is preferably 300～1000mL/min, this flow can guarantee that the figure of second wafer 20 can not be damaged, and can guarantee again second wafer 20 is isolated.
Equally, in the present embodiment, in the time of the surface sprinkling lapping liquid of first wafer 10, to the winding-up of the surface of the 3rd wafer 30 be gas, said gas is preferably nitrogen or helium, said nitrogen and helium are comparatively pure, can not pollute the surface of the 3rd wafer 30; The flow of said gas is preferably 100～200sccm; The pressure of said gas is preferably 5～20Torr; When the gas of above-mentioned flow and pressure is jetted to the 3rd wafer 30 surperficial; Neither can cause damage to the figure on the 3rd wafer 30 too greatly, can guarantee again the 3rd wafer 30 is isolated, prevent that the pollutant on the chemical-mechanical grinding device is attached to the 3rd wafer 30 surfaces owing to pressure and flow.Certainly, in other embodiments of the invention, in the time of the surface sprinkling lapping liquid of first wafer 10, also can be to the surface of the 3rd wafer 30 winding-up deionized water, said deionized water can be kept apart the 3rd wafer 30 equally, avoids it contaminated.When the surface of the 3rd wafer 30 winding-up deionized water, the flow of said deionized water is preferably 300～1000mL/min, and this flow can guarantee that the figure of the 3rd wafer 30 can not be damaged, and can guarantee again the 3rd wafer 30 is isolated.
In the present embodiment; To time of the surface sprinkling lapping liquid of first wafer 10, to the time of the surperficial blowing gas of second wafer 20 or deionized water and to the surperficial blowing gas of the 3rd wafer 30 or the time of deionized water is identical, and promptly the process time of the wafer on first grinding plate 110, second grinding plate 120 and the 3rd grinding plate 130 is identical.Preferably, to time of the surface sprinkling lapping liquid of first wafer 10, be 3～20sec to the time of the surperficial blowing gas of second wafer 20 or deionized water and to the surperficial blowing gas of the 3rd wafer 30 or the time of deionized water.This time can guarantee that part metals layer and the part dielectric layer on first wafer 10 is removed; The defective on these first wafer, 10 surfaces is all got rid of; Improve the reliability of semiconductor devices, and can avoid influencing the production capacity of chemical-mechanical grinding device owing to this overlong time.Certainly, the metal level that those skilled in the art also can remove according to actual needs and the thickness of dielectric layer, corresponding adjustment is to the time of the surface sprinkling lapping liquid of first wafer 10.
Special, after the execution in step S2, promptly after the surface sprinkling lapping liquid of first wafer 10 is with the defective of removing first wafer, 10 surfaces, first wafer 10 is shifted out chemical-mechanical grinding device through transfer platform 140, put in the wafer case of memory chip; Simultaneously, second wafer 20 is sent to the 3rd grinding plate 130 and to the surface sprinkling lapping liquid of second wafer 20 to remove the defective on second wafer, 20 surfaces; Simultaneously; The 3rd wafer 30 is sent to second grinding plate 120 and to the surperficial blowing gas or the deionized water of the 3rd wafer 30; With in process to be ground such as the 3rd wafer 30; The surface of the 3rd wafer 30 is isolated, prevent that the pollutant on the chemical-mechanical grinding device is attached to the 3rd wafer 30 surfaces.
When the quantity of the wafer of doing over again when needs is merely three, remove after the defective on second wafer, 20 surfaces, can second wafer 20 be shifted out chemical-mechanical grinding device through transfer platform 140, put in the wafer case of memory chip; Simultaneously, the 3rd wafer 30 is sent to the 3rd grinding plate 130 and to the surface sprinkling lapping liquid of the 3rd wafer 30, to remove the defective on the 3rd wafer 30 surfaces.After the defective of removing the 3rd wafer 30 surfaces, can the 3rd wafer 30 be shifted out said chemical-mechanical grinding device through transfer platform 140, put in the wafer case of memory chip.
In other embodiments of the invention; If the quantity of the wafer that need do over again is during more than three; The 3rd wafer 30 is sent to second grinding plate and to the surperficial blowing gas of the 3rd wafer 30 or the deionized water time; Also comprise: the 4th wafer that will be to be done over again is sent to first grinding plate 110 and to the surperficial blowing gas or the deionized water of the 4th wafer 40, is attached to the 4th wafer 40 surfaces to prevent the pollutant on the chemical-mechanical grinding device.Next, can repeat the process of transmission wafer and grinding wafers, this process and foregoing description are similar, and those skilled in the art can learn according to foregoing description and the processing procedure of other wafer repeat no more at this.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (12)
1. the reworking method of a chemical mechanical milling tech comprises:
Chemical-mechanical grinding device is provided; Said chemical-mechanical grinding device comprises first grinding plate, second grinding plate and the 3rd grinding plate; Said the 3rd grinding plate is provided with first wafer; Said second grinding plate top is provided with second wafer, and said first grinding plate top is provided with the 3rd wafer;
To the surface sprinkling lapping liquid of said first wafer to remove the defective of said first wafer surface, simultaneously, respectively to the surperficial blowing gas or the deionized water of said second wafer and the 3rd wafer.
2. the reworking method of chemical mechanical milling tech as claimed in claim 1 is characterized in that, said gas or deionized water are with the jet surface of said second wafer and the 3rd wafer of bottom-up direction.
3. the reworking method of chemical mechanical milling tech as claimed in claim 1 is characterized in that, when the surperficial blowing gas of said second wafer and the 3rd wafer, said gas is nitrogen or helium.
4. the reworking method of chemical mechanical milling tech as claimed in claim 3 is characterized in that, the flow of said gas is 100～200sccm, and the pressure of said gas is 5～20Torr.
5. the reworking method of chemical mechanical milling tech as claimed in claim 1 is characterized in that, when the surface of said second wafer and the 3rd wafer winding-up deionized water, the flow of said deionized water is 300～1000mL/min.
6. the reworking method of chemical mechanical milling tech as claimed in claim 1 is characterized in that, is 3～20sec to the time of the surface sprinkling lapping liquid of said first wafer.
7. the reworking method of chemical mechanical milling tech as claimed in claim 6 is characterized in that, is 3～20sec to the surperficial blowing gas of said second wafer and the 3rd wafer or the time of deionized water.
8. the reworking method of chemical mechanical milling tech as claimed in claim 1; It is characterized in that; After the surface sprinkling lapping liquid of said first wafer step, also comprise: said first wafer is shifted out chemical-mechanical grinding device with the defective of removing first wafer surface; Simultaneously, said second wafer is sent to the 3rd grinding plate and to the surface sprinkling lapping liquid of second wafer to remove the defective of second wafer surface; Simultaneously, said the 3rd wafer is sent to second grinding plate and to the surperficial blowing gas or the deionized water of the 3rd wafer.
9. the reworking method of chemical mechanical milling tech as claimed in claim 8; It is characterized in that; Said the 3rd wafer is sent to second grinding plate and to the surperficial blowing gas of the 3rd wafer or the deionized water time, also comprises: the 4th wafer is sent to said first grinding plate and to the surperficial blowing gas or the deionized water of the 4th wafer.
10. the reworking method of chemical mechanical milling tech as claimed in claim 1; It is characterized in that; Said chemical-mechanical grinding device also comprises the first lapping liquid arm that is arranged at said first grinding plate top, utilizes surperficial blowing gas or the deionized water of the said first lapping liquid arm to said the 3rd wafer.
11. the reworking method of chemical mechanical milling tech as claimed in claim 1; It is characterized in that; Said chemical-mechanical grinding device also comprises the second lapping liquid arm that is arranged at said second grinding plate top, utilizes surperficial blowing gas or the deionized water of the said second lapping liquid arm to said second wafer.
12. the reworking method of chemical mechanical milling tech as claimed in claim 1; It is characterized in that; Said chemical-mechanical grinding device also comprises the 3rd lapping liquid arm that is arranged at said the 3rd grinding plate top, utilizes the surface sprinkling lapping liquid of said the 3rd lapping liquid arm to said first wafer.
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| CN104108072A (en) * | 2013-04-16 | 2014-10-22 | 陈炤彰 | System and method for supplying gas-added polishing slurry |
| CN105081957A (en) * | 2014-05-14 | 2015-11-25 | 和舰科技(苏州)有限公司 | Chemical mechanical polishing method for wafer planarization production |
| CN105364699A (en) * | 2014-07-25 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | A chemical mechanical polishing method and a chemical mechanical polishing apparatus |
| CN109262446A (en) * | 2017-07-12 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of chemical and mechanical grinding method and chemical mechanical polishing device |
| CN109434671A (en) * | 2018-10-11 | 2019-03-08 | 德淮半导体有限公司 | A kind of wafer processing and processing method |
| CN114473859A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Wafer polishing apparatus and wafer polishing method |
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| CN102371532B (en) | 2013-12-18 |
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