CN107914213B - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
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- CN107914213B CN107914213B CN201610885628.3A CN201610885628A CN107914213B CN 107914213 B CN107914213 B CN 107914213B CN 201610885628 A CN201610885628 A CN 201610885628A CN 107914213 B CN107914213 B CN 107914213B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Abstract
The invention provides a chemical mechanical polishing method. The method comprises the following steps: providing a semiconductor wafer; and performing first chemical mechanical polishing on the semiconductor wafer on a polishing table, wherein the rotation direction of the wafer, the rotation direction of a polishing pad dresser and the rotation direction of a polishing pad carried by the polishing table are not completely the same. By controlling the incomplete same of the rotation directions of all the components on the grinding table, the grinding time is effectively reduced, the grinding pressure is reduced, and the corresponding rotating speed, pressure and time of the grinding pad dresser are reduced. Thereby effectively improving the grinding rate and increasing the yield; the grinding pad, the grinding head, the utilization rate and the life cycle of the grinding slurry are increased, and the production cost is reduced. Meanwhile, the polishing solution by-product on the surface of the polishing pad can be effectively cleaned, and the product defects such as corresponding scratches are reduced.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing method.
Background
As feature sizes shrink and metal interconnects increase during the fabrication of integrated circuits, the requirements for flatness of the wafer surface also increase. Chemical Mechanical Polishing (CMP) is a technique combining mechanical polishing and chemical etching, and is currently the most effective method for wafer planarization. The chemical mechanical polishing adopts a rotary polishing head to clamp a wafer, the wafer is pressed on a rotary polishing pad under certain pressure, and the surface of the wafer is flattened under the combined action of chemistry and machinery through the action of polishing slurry.
How to improve the polishing rate, increase the utilization rate and life cycle of the polishing pad, the polishing head and the polishing slurry, reduce the production cost, reduce the residue of the polishing slurry and improve the yield and quality of the chemical mechanical polishing in the chemical mechanical polishing is a long-standing concern and attention paid by semiconductor manufacturers.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In order to increase the polishing rate of chemical mechanical polishing, increase the utilization rate and life cycle of a polishing pad, a polishing head and polishing slurry, reduce the production cost and increase the yield, the invention provides a chemical mechanical polishing method, which comprises the following steps:
providing a semiconductor wafer; and performing first chemical mechanical polishing on the semiconductor wafer on a polishing table, wherein the rotation direction of the wafer, the rotation direction of a polishing pad dresser and the rotation direction of a polishing pad carried by the polishing table are not completely the same.
Optionally, the rotation direction of the polishing pad dresser is the same as the rotation direction of the wafer, and the polishing table bears the polishing pad to rotate in the opposite direction.
Optionally, the set range of the wafer rotation speed is 45-50 rpm/min.
Optionally, the wafer is further subjected to a downward pressure applied thereto by the polishing head while rotating, and the pressure is set within a range of 4-4.5 psi.
Optionally, the setting range of the rotation speed of the polishing pad dresser is 20-25 rpm/min.
Optionally, the pressure setting range of the polishing pad dresser is 4.5-4.65 psi, and the control time setting range is 30-35 sec.
Optionally, the rotation speed of the polishing table for bearing the polishing pad is set within a range of 65-70 rpm/min.
Optionally, the flow rate of the slurry dispensed by the slurry dispenser is set within a range of 160-165 ml/min.
Optionally, the rotation direction of the grinding table bearing the grinding pad is different from the rotation direction of the wafer, and the rotation direction of the grinding pad dresser is controlled in two stages: the first stage controls the rotation direction of the grinding pad dresser and the grinding table bearing the grinding pad to be the same, and the second stage controls the rotation direction of the grinding pad dresser and the wafer to be the same.
Optionally, the set range of the rotation speed of the wafer is 40-45 rpm/min.
Optionally, the wafer is further subjected to a downward pressure applied thereto by the polishing head while rotating, and the pressure is set within a range of 4-4.25 psi.
Optionally, the rotation speed of the polishing table for bearing the polishing pad is set within a range of 60-65 rpm/min.
Optionally, the rotation direction of the polishing pad dresser is controlled in two stages, the first stage controls the rotation direction of the polishing pad dresser and the rotation direction of the polishing pad carried by the polishing table to be the same, the rotation speed is set within a range of 30-35 rpm/min, the pressure is set within a range of 4.85-5.15 psi, and the control time is set within a range of 10-15 sec.
Optionally, the rotation direction of the polishing pad dresser is controlled in two stages, and the rotation direction of the polishing pad dresser and the rotation direction of the wafer are controlled in the second stage to be the same, the rotation speed is set to be 20-22 rpm/min, the pressure is set to be 4-4.25 psi, and the control time is set to be 10-15 sec.
Optionally, the flow rate of the slurry dispensed by the slurry dispenser is set within a range of 160-165 ml/min.
In summary, according to the chemical mechanical polishing method described in the present invention, in the chemical mechanical polishing process, by controlling the rotation direction of each component on the polishing platen, that is, controlling the rotation direction of the wafer to be polished, the rotation direction of the polishing platen bearing the polishing pad, and the rotation direction of the polishing pad dresser to be not identical, the polishing time is effectively reduced, the polishing pressure is reduced, and the corresponding rotation speed, pressure, and time of the polishing pad dresser are reduced. Thereby effectively improving the grinding rate and increasing the yield; the grinding pad, the grinding head, the utilization rate and the life cycle of the grinding slurry are increased, and the production cost is reduced. Meanwhile, the polishing solution by-product on the surface of the polishing pad can be effectively cleaned, and the product defects such as corresponding scratches are reduced.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
FIG. 1 is a schematic diagram of the operation of the components of a polishing apparatus in a prior art CMP apparatus;
FIG. 2 is a schematic flow diagram of a chemical mechanical polishing process involved in the fabrication of a semiconductor device in two embodiments of the present invention;
FIGS. 3A-3C are cross-sectional views of structures formed during steps associated with chemical mechanical polishing involved in the fabrication of semiconductor devices in accordance with two embodiments of the present invention;
FIG. 4 is a schematic diagram illustrating the operation of the components of the polishing apparatus involved in chemical mechanical polishing according to one embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating the operation of the components of the polishing apparatus involved in chemical mechanical polishing according to another embodiment of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
In order to provide a thorough understanding of the present invention, a detailed description will be given in the following description to illustrate the chemical mechanical polishing method according to the present invention. It will be apparent that the invention may be practiced without limitation to specific details that are within the skill of one of ordinary skill in the semiconductor arts. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Exemplary embodiments according to the present invention will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and the same elements are denoted by the same reference numerals, and thus the description thereof will be omitted.
The principles of the present invention will be explained below with reference to the polishing of copper damascene structures as an example. The embodiment is exemplified by polishing of a copper damascene structure, which is not intended to limit the technical solution of the present invention, and it is obvious that the technical solution of the present invention can also be applied to other processes requiring chemical mechanical polishing.
In dual damascene copper metallization processes, the use of chemical mechanical polishing to remove large amounts of copper and tantalum barrier layers has become an indispensable critical step in the semiconductor device fabrication process. In the chemical mechanical polishing process of copper metal, a two-step polishing method is generally adopted: the first step removes a substantial amount of the copper layer and the second step removes the tantalum barrier layer using a polishing slurry having a very low copper removal efficiency. The two-step grinding method can effectively prevent copper dishing and oxide corrosion effects caused by copper loss due to excessive grinding when only one-step grinding is adopted. The first step of grinding is the dominant step of removing rate in the whole copper grinding process; all of the copper and the first step polishing slurry must be completely removed from the surface before the second step polishing is used, since copper metal is very oxidized during polishing and the residue of the first step polishing slurry on the surface is very likely to cause deposition of byproducts at the groove corners and thus large scratch defects. Therefore, the removal rate of the slurry in the first grinding step is a crucial influence factor on the grinding quality and the grinding rate of the whole copper grinding process.
In the prior art, a conventional chemical mechanical polishing apparatus is used, which comprises a polishing head, a polishing pad dresser, and a polishing slurry dispenser for dispensing polishing slurry, as shown in fig. 1, a wafer 101 to be polished is placed between the polishing head 102 and the polishing pad 103, the rotation direction of the wafer 101 to be polished is the same as the rotation direction of the polishing pad 103 (e.g., both rotate in a counterclockwise direction), the polishing pad is supported on a polishing table and rotates along with the rotation of the polishing table, the polishing slurry dispenser 104 dispenses the polishing slurry onto the surface of the polishing pad, the polishing pad dresser 105 is a rotating disk coated with diamond, and the rotation direction of the rotating disk is the same as the rotation direction of the wafer and the polishing pad supported by the polishing table. A general embodiment: the wafer 101 to be polished is rotated in a counterclockwise direction at a speed set in the range of 50-60 rpm (revolutions per minute) while the wafer 101 is subjected to a downward pressure by the polishing head 102 at a pressure set in the range of 5-6 psi (pounds per square inch, a unit well known to those skilled in the art); the grinding pad 103 is supported on the grinding table and rotates along with the grinding table in the counterclockwise direction, and the set range of the rotating speed is 100-110 rpm/min; rotating the polishing pad dresser in a counterclockwise direction, setting the rotating speed within a range of 30-35 rpm/min, setting the pressure of the polishing pad dresser within a range of 4.85-5.15 psi, and controlling the operating time of the polishing pad dresser within a range of 40-45 sec; the slurry dispenser 104 dispenses a slurry flow rate of 140 to 150ml/min (milliliters per minute). Under the above setting, the first polishing copper removal is performed for a chemical mechanical polishing time of 100 to 110 sec.
In order to increase the polishing rate of chemical mechanical polishing, increase the utilization rate and life cycle of a polishing pad, a polishing head and polishing slurry, reduce the production cost and increase the yield, the invention provides a chemical mechanical polishing method, which comprises the following steps:
providing a semiconductor wafer; and performing first chemical mechanical polishing on the semiconductor wafer on a polishing table, wherein the rotation direction of the wafer, the rotation direction of a polishing pad dresser and the rotation direction of a polishing pad carried by the polishing table are not completely the same.
Optionally, the rotation direction of the polishing pad dresser is the same as the rotation direction of the wafer, and the polishing table bears the polishing pad to rotate in the opposite direction.
Optionally, the rotation direction of the grinding table bearing the grinding pad is different from the rotation direction of the wafer, and the rotation direction of the grinding pad dresser is controlled in two stages: the first stage controls the rotation direction of the grinding pad dresser and the grinding table bearing the grinding pad to be the same, and the second stage controls the rotation direction of the grinding pad dresser and the wafer to be the same.
According to the chemical mechanical polishing method described by the invention, by controlling the rotation direction of the wafer, the rotation direction of the polishing pad loaded by the polishing table and the rotation direction of the polishing pad dresser are not completely the same, so that the polishing time is effectively reduced, the polishing pressure is reduced, and the corresponding rotation speed, pressure and time of the polishing pad dresser are reduced. Thereby effectively improving the grinding rate and increasing the yield; the grinding pad, the grinding head, the utilization rate and the life cycle of the grinding slurry are increased, and the production cost is reduced. Meanwhile, the polishing solution by-product on the surface of the polishing pad can be effectively cleaned, and the product defects such as corresponding scratches are reduced. The detailed description of the specific implementation is provided in the following examples.
Example one
Referring to fig. 2, fig. 3A to 3C and fig. 4 are schematic flow charts illustrating a chemical mechanical polishing process involved in a manufacturing process of a semiconductor device according to an embodiment of the present invention, fig. 3A to 3C are cross-sectional views illustrating structures formed by steps involved in the chemical mechanical polishing process of a semiconductor device according to an embodiment of the present invention, and fig. 4 is a schematic operation diagram illustrating components of a polishing apparatus involved in a first chemical mechanical polishing according to an embodiment of the present invention.
Step S1 is executed: a semiconductor substrate (i.e., a semiconductor wafer) is provided on which a dual damascene structure to be polished is formed.
Referring to fig. 3A, a semiconductor substrate 300 and a dual damascene structure formed in sequence on the semiconductor substrate 300 in one embodiment of the invention are shown. In this embodiment, polishing of a copper damascene structure is taken as an example, which is not intended to limit the technical solution of the present invention, and it is obvious that the technical solution of the present invention can also be applied to other processes requiring chemical mechanical polishing.
The semiconductor substrate may comprise any semiconductor material, which may include, but is not limited to: si, SiC, SiGe, SiGeC, Ge alloys, GeAs, InAs, InP, NDC (Nitrogen doped Si1icon carbide), and other III-V or II-VI compound semiconductors. In one embodiment of the present invention, the semiconductor substrate 300 is a Si material.
In the process of fabricating the dual damascene structure, the process of forming the trench of the metal interconnection structure 301 on the semiconductor substrate 300 by using the dual damascene process is a variety of suitable process technologies that are well known to those skilled in the art, and will not be described herein again.
A diffusion barrier layer 302 and a metal Cu layer 303 are formed in the trench of the metal interconnect structure 301, the diffusion barrier layer may be Ta, TaN or a combination of Ta and TaN, and the metal layer and the diffusion barrier layer are formed by a physical vapor deposition process or an electroplating process, or other suitable process techniques familiar to those skilled in the art, which are not described herein again. Specifically, the diffusion barrier layer 302 employs a combination of Ta and TaN (Ta/TaN) in one embodiment of the present invention.
Step S2 is executed: and performing first chemical mechanical polishing to remove the metal layer outside the damascene structure groove and stop at the barrier layer, wherein the rotation direction of the wafer, the rotation direction of the polishing pad dresser and the rotation direction of the polishing pad carried by the polishing table are different.
Illustratively, the rotation direction of the polishing pad dresser is the same as the rotation direction of the wafer, and the polishing table bearing the polishing pad rotates in the opposite direction.
Illustratively, as shown in fig. 4, the wafer 401 to be polished rotates in a counterclockwise direction, the pad dresser 405 rotates in a counterclockwise direction, and the polishing platen carries the polishing pad 403 to rotate in a clockwise direction. Specifically, a wafer 401 to be polished is placed between a polishing head 402 and a polishing pad 403, the wafer 401 to be polished rotates counterclockwise at a rotation speed set within a range of 45-50 rpm/min, and the polishing head 402 generates a downward pressure on the wafer 401, wherein the pressure is set within a range of 4-4.5 psi; the polishing pad dresser 405 rotates in a counterclockwise direction, the set range of the rotating speed is 20-25 rpm/min, the set range of the pressure of the polishing pad dresser is 4.5-4.65 psi, and the set range of the time for controlling the polishing pad dresser to dress the polishing pad is 30-35 sec; the polishing table carries the polishing pad 403 to rotate clockwise, and the rotation speed is set to be 65-70 rpm/min; the slurry dispenser 404 dispenses slurry at a flow rate set within a range of 160 to 165 ml/min. Under the above setting, the chemical mechanical polishing time for the first step of polishing copper removal is 80-90 sec.
The method is suitable for the coarse grinding of the copper process of the first grinding platform, the grinding platform bears the grinding pad to rotate clockwise, the rotation direction is opposite to the rotation direction of the grinding pad dresser and the rotation direction of the grinding head control wafer, the grinding pressure can be reduced, the copper metal layer removal efficiency is increased, and the grinding time is effectively reduced; meanwhile, the corresponding rotating speed of the grinding pad dresser can be reduced, and the pressure and the control time can be set. The reduction of the grinding time effectively improves the grinding speed and increases the yield; by reducing the rotating speed setting of the grinding pad dresser, the pressure setting is reduced, the grinding pad, the grinding head, the utilization rate and the life cycle of grinding slurry are effectively increased, and the production cost is reduced.
As shown in fig. 3B, which is a schematic structural view of the wafer after the extra copper outside the trench is removed by polishing according to the embodiment, a first chemical mechanical polishing is performed to remove the extra copper outside the trench of the wafer, and the polishing is terminated at the Ta/TaN diffusion barrier layer 302.
Step S3: and performing second chemical mechanical polishing to remove the diffusion barrier layer outside the groove and stop at the hard mask layer with the dual-metal damascene structure.
As shown in fig. 3C, which is a schematic structural view of the wafer after the Ta/TaN diffusion barrier layer 302 outside the trench is removed by polishing according to the second step of polishing to remove the diffusion barrier layer in the conventional method for forming a copper interconnect structure in this embodiment, which is not repeated herein.
Example two
Fig. 2, fig. 3A to 3C and fig. 5 show a chemical mechanical polishing method according to another embodiment of the present invention, in which fig. 2 is a schematic flow chart of a chemical mechanical polishing process involved in a manufacturing process of a semiconductor device according to the embodiment, fig. 3A to 3C are cross-sectional views of structures formed in a related step of the chemical mechanical polishing process of a semiconductor device according to an embodiment of the present invention, and fig. 5 is a schematic operation diagram of components of a polishing apparatus involved in the first chemical mechanical polishing according to an embodiment of the present invention.
The embodiment is basically the same as the embodiment given in the first embodiment, and comprises the following steps: s1: providing a semiconductor substrate (i.e., a semiconductor wafer) on which a dual damascene structure to be polished is formed (see fig. 3A); s2: performing a first chemical mechanical polishing to remove the metal layer outside the damascene structure trench and stop at the barrier layer, wherein the rotation direction of the wafer, the rotation direction of the polishing pad dresser and the rotation direction of the polishing pad carried by the polishing table are different (see fig. 3B); s3: a second cmp is performed to remove the diffusion barrier layer outside the trench and stopping at the metal hard mask layer (see fig. 3C). The difference between the two embodiments is that in the step of performing S2, when performing the first cmp to remove the metal layer outside the damascene structure trench and stop at the barrier layer, the control method for controlling the rotation direction of the wafer, the rotation direction of the polishing pad dresser, and the rotation direction of the polishing pad carried by the polishing table is different from the control method of the first embodiment; in this embodiment, the rotation direction of the polishing pad carried by the polishing table is different from the rotation direction of the wafer, and the rotation direction of the polishing pad dresser is controlled in two stages: the first stage controls the rotation direction of the grinding pad dresser and the grinding table bearing the grinding pad to be the same, and the second stage controls the rotation direction of the grinding pad dresser and the wafer to be the same. For brevity, a detailed description of the same steps as those shown in the first embodiment (the embodiment shown in fig. 2, fig. 3A to 3C and fig. 4) will be omitted, and a person skilled in the art can understand a detailed operation manner of the same steps by referring to fig. 5 in combination with the above description. Therefore, only the different step S2 will be described in detail below.
Step S2 is executed: and performing first chemical mechanical polishing to remove the metal layer outside the damascene structure groove and stop at the barrier layer, wherein the rotation direction of the wafer, the rotation direction of the polishing pad dresser and the rotation direction of the polishing pad carried by the polishing table are different.
Illustratively, the rotation direction of the polishing pad carried by the polishing table is different from the rotation direction of the wafer, and the rotation direction of the polishing pad dresser is controlled in two stages: the first stage controls the rotation direction of the grinding pad dresser and the grinding table for bearing the grinding pad to be the same, and the second stage controls the rotation direction of the grinding pad dresser and the grinding head to be the same.
Illustratively, as shown in fig. 5, the polishing table carries the polishing pad 503 to rotate in a counterclockwise direction; the wafer 501 to be polished rotates clockwise; the pad dresser 505 rotates counterclockwise first in the same direction as the polishing pad carried by the polishing table, and then rotates clockwise in the same direction as the wafer to be polished. Specifically, a wafer 501 to be polished is placed between a polishing head 502 and a polishing pad 503, the wafer 501 to be polished rotates counterclockwise at a rotation speed set to 40-45 rpm/min, and the polishing head 502 generates a downward pressure on the wafer 501, wherein the pressure is set to be 4-4.25 psi; the polishing pad 503 is supported on the polishing table and rotates clockwise along with the polishing table, and the rotation speed is set within the range of 60-65 rpm/min; the flow rate of the slurry dispensed by the slurry dispenser 504 is set within a range of 160 to 165 ml/min; in the first stage, the polishing pad dresser 505 is controlled to rotate along the same direction as the polishing pad carried by the polishing table in the counterclockwise direction, the set range of the rotating speed is 30-35 rpm/min, the set range of the pressure is 4.85-5.15 psi, and the set range of the control time is 10-15 sec; the second stage controls the polishing pad dresser 505 to rotate clockwise with the wafer to be polished, the rotation speed is set to 20-22 rpm/min, the pressure is set to 4-4.25 psi, and the control time is set to 10-15 sec. Under the above setting, the first polishing copper removal is performed for a chemical mechanical polishing time of 75-80 sec.
Compared with the first embodiment (shown in fig. 5), the method is suitable for the rough grinding of the copper process of the first grinding platform, and the rotation direction of the dresser for controlling the grinding pad is opposite to the rotation direction of the grinding table for bearing the grinding pad and the rotation direction of the grinding head for controlling the wafer, so that the grinding pressure can be further reduced, the removal efficiency of the copper metal layer can be increased, and the grinding time can be further reduced; meanwhile, the corresponding rotating speed of the grinding pad dresser can be reduced, and the pressure and the control time can be set. The rotation of the grinding pad dresser is completed in two stages, grinding liquid byproducts on the surface of the grinding pad can be effectively cleaned, and corresponding product defects such as scratches are reduced.
The reduction of the grinding time effectively improves the grinding speed and increases the yield; by reducing the rotating speed setting of the grinding pad dresser, the pressure setting is reduced, the grinding pad, the grinding head, the utilization rate and the life cycle of grinding slurry are effectively increased, and the production cost is reduced.
In summary, according to the chemical mechanical polishing method of the present invention, in the copper polishing process, by controlling the rotation direction of each component on the first chemical mechanical polishing platen, that is, controlling the rotation direction of the wafer to be polished, the rotation direction of the polishing pad carried by the polishing platen, and the rotation direction of the polishing pad dresser to be not identical, the polishing time is effectively reduced, the polishing pressure is reduced, and the corresponding rotation speed, pressure and time of the polishing pad dresser are reduced. Thereby effectively improving the grinding rate and increasing the yield; the grinding pad, the grinding head, the utilization rate and the life cycle of the grinding slurry are increased, and the production cost is reduced. Meanwhile, the polishing solution by-product on the surface of the polishing pad can be effectively cleaned, and the product defects such as corresponding scratches are reduced.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A chemical mechanical polishing method, comprising:
providing a semiconductor wafer, wherein a dual damascene structure to be ground is formed on the semiconductor wafer;
performing first chemical mechanical polishing on the semiconductor wafer on a polishing table to remove the metal layer outside the dual damascene structure groove, wherein in the first chemical mechanical polishing, the wafer, a polishing pad dresser and a polishing table bearing polishing pads rotate simultaneously, and the rotation direction of the wafer, the rotation direction of the polishing pad dresser and the rotation direction of the polishing table bearing polishing pads are not completely the same; wherein, the direction of rotation that the grinding table bore the weight of the abrasive pad is different with the direction of rotation of wafer, and the direction of rotation of abrasive pad trimmer divides two stage control: the first stage controls the rotation direction of the grinding pad dresser and the grinding table bearing the grinding pad to be the same, and the second stage controls the rotation direction of the grinding pad dresser and the wafer to be the same.
2. The method as claimed in claim 1, wherein the rotation speed of the wafer is set to be in a range of 40 to 45 rpm/min.
3. The method of claim 1, wherein the wafer is rotated while being subjected to a downward pressure applied thereto by the polishing head, the pressure being set in a range of 4-4.25 psi.
4. The method of claim 1, wherein the rotation speed of the polishing platen carrying the polishing pad is set to be in a range of 60 to 65 rpm/min.
5. The method according to claim 1, wherein the rotational direction of the pad dresser is controlled in two stages, the rotational direction of the pad dresser and the rotational direction of the polishing pad carried by the platen are the same in the first stage, the rotational speed is set to be in a range of 30 to 35rpm/min, the pressure is set to be in a range of 4.85 to 5.15psi, and the control time is set to be in a range of 10 to 15 sec.
6. The method of claim 1, wherein the rotational direction of the pad dresser is controlled in two stages, the second stage controlling the pad dresser to rotate in the same direction as the wafer at a rotational speed set in the range of 20 to 22rpm/min, a pressure set in the range of 4 to 4.25psi, and a control time set in the range of 10 to 15 sec.
7. The method of claim 1, wherein the slurry dispenser dispenses the slurry at a flow rate set in a range of 160 to 165 ml/min.
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| CN114346893B (en) * | 2022-01-13 | 2023-06-30 | 上海华虹宏力半导体制造有限公司 | Chemical mechanical polishing method |
| CN114734372A (en) * | 2022-03-28 | 2022-07-12 | 北京烁科精微电子装备有限公司 | Wafer grinding method |
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| US6162112A (en) * | 1996-06-28 | 2000-12-19 | Canon Kabushiki Kaisha | Chemical-mechanical polishing apparatus and method |
| US6806193B2 (en) * | 2003-01-15 | 2004-10-19 | Texas Instruments Incorporated | CMP in-situ conditioning with pad and retaining ring clean |
| CN1910011A (en) * | 2004-01-26 | 2007-02-07 | Tbw工业有限公司 | Chemical mechanical planarization process control utilizing in-situ conditioning process |
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| US7004822B2 (en) * | 2002-07-31 | 2006-02-28 | Ebara Technologies, Inc. | Chemical mechanical polishing and pad dressing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6162112A (en) * | 1996-06-28 | 2000-12-19 | Canon Kabushiki Kaisha | Chemical-mechanical polishing apparatus and method |
| US6806193B2 (en) * | 2003-01-15 | 2004-10-19 | Texas Instruments Incorporated | CMP in-situ conditioning with pad and retaining ring clean |
| CN1910011A (en) * | 2004-01-26 | 2007-02-07 | Tbw工业有限公司 | Chemical mechanical planarization process control utilizing in-situ conditioning process |
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