CN101318308A - Chemical mechanical grinding apparatus - Google Patents
Chemical mechanical grinding apparatus Download PDFInfo
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- CN101318308A CN101318308A CNA2007100417645A CN200710041764A CN101318308A CN 101318308 A CN101318308 A CN 101318308A CN A2007100417645 A CNA2007100417645 A CN A2007100417645A CN 200710041764 A CN200710041764 A CN 200710041764A CN 101318308 A CN101318308 A CN 101318308A
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- mechanical polishing
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Abstract
The invention provides a chemical-mechanical grinding device, at least comprising a grinding head adsorbing a wafer and a cleaning device used for cleaning the wafer surface. The cleaning device at least comprises an ejector which is corresponding to the grinding head and a main pipe which leads the cleaning liquid into the ejector, wherein, the grinding head is rotary relatively to the ejector, thus leading the cleaning liquid ejected by the ejector to distribute uniformly on the wafer surface adsorbed by the grinding head. The spay nozzles of the ejector are in annular distribution. The main pipe is provided with a regulating valve which controls the pressure of the cleaning liquid. The cleaning liquid is mixed at least by de-ionized water and wafer protection liquid. Compared with the prior art, the pressure on the wafer surface during cleaning is uniform, thus effectively protecting the wafer surface and cleaning cleaner. Furthermore, the cleaning liquid of the invention is a liquid mixture of the de-ionized water and the wafer protection liquid, thus effectively avoiding corrosion of the wafer surface as the de-ionized water does not have enough purity and the cleaning time is overlong.
Description
Technical field
The present invention relates to manufacture of semiconductor, relate in particular to chemical mechanical polishing device.
Background technology
At present, bring into use the metal material of copper in the integrated circuit, adopt dual damascene to inlay the copper-connection that (Dual Damascene) technology realizes integrated circuit usually as interconnection structure.Adopting dual-damascene technics to make integrated circuit copper interconnecting all can adopt cmp (Chemical Mechanical Polish) to make the planarization of copper layer after copper being filled in the lead groove, remove unnecessary copper on the dielectric layer, allow wafer surface reach comprehensive planarization, carry out thin film deposition in order to follow-up.
Chemical mechanical milling tech generally included for three steps.The first step is used for grinding off the most metal of wafer surface; Second step was finish grinded the metal that contacts with the barrier layer by the method that reduces grinding rate, and by the endpoint detecting technology grinding was parked on the barrier layer; At last, grind off barrier layer and a spot of dielectric oxide.
Chemical-mechanical grinding liquid is normally acid, contain hydrogen peroxide as with the oxidant of metal reaction such as copper.For cmp, because copper almost produces corrosion phenomenon in all aqueous solution, the lapping liquid that sticks on the wafer is very fast to the corrosion rate on copper surface.In case board is reported to the police, need to rotate grinding head to grinding head washer top, the control valve of opening deionized water carries out clean wafers, to remove the residual lapping liquid on the wafer.Otherwise, to interrupt surpassing five minutes, the corrosiveness of the lapping liquid that is adhered to just can cause this wafer to be scrapped.Simultaneously, because the shower nozzle of grinding head washer is linearly to arrange, and the wafer of grinding head absorption is fixing in cleaning process, the hydraulic pressure of shower nozzle ejection can cause the excessively flushing of surface of the corresponding shower nozzle of wafer, thereby the surface at wafer forms a straight line that is rinsed, this excessive cleaning can cause the damage of wafer surface on the contrary, reduces the yield of wafer.
Therefore, be necessary to provide a kind of improved chemical mechanical polishing device.
Summary of the invention
The object of the present invention is to provide a kind of improved chemical mechanical polishing device, it can effectively reduce wafer surface owing to clean the improper damage that causes.
For achieving the above object, a kind of chemical mechanical polishing device provided by the invention, at least grinding head and a cleaning device that is used for the clean wafers surface of comprising an absorption wafer, this cleaning device comprises an injector corresponding with grinding head at least and cleaning fluid is imported the pipeline of injector, wherein, the relative injector of described grinding head rotates, and makes the cleaning fluid of injector ejection can be evenly distributed to the wafer surface that grinding head adsorbs.
The shower nozzle of described injector can distribute ringwise.The control valve of control cleaning fluid pressure size is installed on described main pipe rail.
Described cleaning fluid is made of deionized water and the mixing of wafer protection liquid at least.Described cleaning device also comprises the pipeline and the pipeline that transmits wafer protection liquid that transmit deionized water at least.On described two pipelines control valve can be set, be used for the control access conducting or close.Can be provided for measuring the flowmeter measuring device of liquid on described two pipelines and regulate liquid flow-conditioning.Described two pipelines are also received main pipe rail repeatedly.
Compared with prior art, grinding head of the present invention rotates with respect to injector, makes the cleaning fluid of injector ejection can be evenly distributed to the wafer surface that grinding head adsorbs.The pressure that is subjected on the wafer is equally distributed, has not only protected wafer surface, and cleaning is cleaner.The present invention is except adopting the washed with de-ionized water wafer surface; and by having set up a wafer protection liquid pipeline; adopt the mixing material clean wafers surface of deionized water and wafer protection liquid, this has just been avoided effectively because deionized water purity is not enough and the long wafer surface that causes of scavenging period is corroded.
Description of drawings
By the description of a following embodiment to chemical mechanical polishing device of the present invention, can further understand purpose, specific structural features and the advantage of its invention in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the structural representation of chemical mechanical polishing device of the present invention.
The specific embodiment
As shown in Figure 1, the chemical mechanical polishing device that the present invention relates to mainly comprises grinding head 1 and grinding head washer 2.The bottom surface of grinding head 1 is provided with adsorption section 11, and it is used to adsorb wafer (not shown) and grinds.
Grinding head washer 2 is used to clean the residues such as lapping liquid that remain on the wafer.Grinding head washer 2 comprises grinding head injector 21; cleaning fluid is imported the liquid line 22 of injector 21; the pressure-regulating valve 24 of control cleaning fluid pressure size, control deionized water pipeline conducting or the control valve 23 of closing and control wafer protection liquid pipeline conducting or the control valve 25 of closing.Some shower nozzles 211 distribute on the injector 21.
When grinding head 1 forwards grinding head washer 2 tops to; open the control valve 23 of deionized water and the control valve 25 of wafer protection liquid pipeline; the mixing material of deionized water and wafer protection liquid feeds injector 21 by liquid line 22; 21 pairs of wafer surface of injector are cleaned, to remove the residual lapping liquid on the wafer.The master control valve of a control fluid path also can be set on liquid line 22, and whether under the situation that control valve 23 and 25 has been opened, directly controlling liquid line 22 provides cleaning fluid to injector 21.
After grinding head 1 forwarded grinding head washer 2 tops to, slowly rotation of grinding head 1 beginning evenly distributed so that grinding head washer 2 is ejected into the pressure of the cleaning fluid of wafer surface, not only protected wafer surface, and cleaning is cleaner.In preferred embodiment of the present invention, the speed rotation that grinding head 1 changes with per minute 5.In other embodiments of the invention, also can be according to the rotary speed of actual processing procedure change grinding head 1.
In other embodiments of the invention, also grinding head injector 21 can be arranged to rotatablely, grinding head 1 can relative fixed, and perhaps grinding head 1 is different with the rotary speed of grinding head injector 21, all belongs to protection scope of the present invention.
In other embodiments of the invention, also the shower nozzle 211 of grinding head injector 21 can be set to annular spread or other are equal to distribution, also can reach pressure that injector 21 of the present invention the is sprayed onto wafer surface effect that evenly distributes.
In an embodiment of the present invention; can also and provide at the pipeline that deionized water is provided meter and adjusting device are installed on the pipeline of wafer protection liquid; meter can show the fluid flow of corresponding pipeline; adjusting device can be controlled the fluid flow of corresponding pipeline, thereby reaches the effect of accurate control deionized water and wafer protection liquid mixed proportion.In other embodiments of the invention, also can feed other liquid, to reach the effect on better clean wafers surface according to the processing procedure needs.
The present invention is except adopting the washed with de-ionized water wafer surface; also set up a wafer protection liquid pipeline; adopt the mixing material clean wafers surface of deionized water and wafer protection liquid, this has just been avoided effectively because the not enough and long corrosion that causes wafer surface to occur of scavenging period of deionized water purity.
Claims (8)
1, a kind of chemical mechanical polishing device, at least grinding head and a cleaning device that is used for the clean wafers surface of comprising an absorption wafer, this cleaning device comprises an injector corresponding with grinding head at least and cleaning fluid is imported the main pipe rail of injector, it is characterized in that: the relative injector of described grinding head rotates, and makes the cleaning fluid of injector ejection can be evenly distributed to the wafer surface that grinding head adsorbs.
2, a kind of chemical mechanical polishing device as claimed in claim 1, it is characterized in that: the shower nozzle of described injector can distribute ringwise.
3, a kind of chemical mechanical polishing device as claimed in claim 1 is characterized in that: the control valve that control cleaning fluid pressure size is installed on described main pipe rail.
4, a kind of chemical mechanical polishing device as claimed in claim 1 is characterized in that: described cleaning fluid is made of deionized water and the mixing of wafer protection liquid at least.
5, a kind of chemical mechanical polishing device as claimed in claim 4 is characterized in that: described cleaning device also comprises the pipeline and the pipeline that transmits wafer protection liquid that transmit deionized water at least.
6, a kind of chemical mechanical polishing device as claimed in claim 5 is characterized in that: on described two pipelines control valve can be set, be used for the control access conducting or close.
7, a kind of chemical mechanical polishing device as claimed in claim 5 is characterized in that: can be provided for measuring the flowmeter measuring device of liquid on described two pipelines and regulate liquid flow-conditioning.
8, a kind of chemical mechanical polishing device as claimed in claim 5 is characterized in that: described two pipelines are also received main pipe rail repeatedly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100417645A CN101318308A (en) | 2007-06-08 | 2007-06-08 | Chemical mechanical grinding apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100417645A CN101318308A (en) | 2007-06-08 | 2007-06-08 | Chemical mechanical grinding apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101318308A true CN101318308A (en) | 2008-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100417645A Pending CN101318308A (en) | 2007-06-08 | 2007-06-08 | Chemical mechanical grinding apparatus |
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| CN (1) | CN101318308A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129959A (en) * | 2011-01-05 | 2011-07-20 | 清华大学 | Wafer cleaning device and method for cleaning wafer by using same |
| CN102371532A (en) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Reworking method for chemical mechanical lapping process |
| CN103035504A (en) * | 2011-10-09 | 2013-04-10 | 中芯国际集成电路制造(北京)有限公司 | Chemical machinery polishing method and chemical machinery polishing device |
| CN104400618A (en) * | 2014-09-23 | 2015-03-11 | 上海华力微电子有限公司 | Equipment and method for FinFET polycrystalline silicon chemical mechanical grinding |
| CN105990122A (en) * | 2015-02-15 | 2016-10-05 | 盛美半导体设备（上海）有限公司 | Method for reducing surface roughness of wafer |
| CN107199503A (en) * | 2016-03-18 | 2017-09-26 | 株式会社荏原制作所 | Lapping device and Ginding process |
| CN109277940A (en) * | 2017-07-20 | 2019-01-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of chemical mechanical polishing device and chemical and mechanical grinding method |
| CN110216094A (en) * | 2018-03-02 | 2019-09-10 | 金铉泰 | The scaling powder cleaning systems of cleaning object can independently be cleaned |
| CN111002205A (en) * | 2019-12-19 | 2020-04-14 | 黄卫良 | Wafer polishing equipment for semiconductor |
-
2007
- 2007-06-08 CN CNA2007100417645A patent/CN101318308A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102371532A (en) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Reworking method for chemical mechanical lapping process |
| CN102371532B (en) * | 2010-08-24 | 2013-12-18 | 中芯国际集成电路制造(北京)有限公司 | Reworking method for chemical mechanical lapping process |
| CN102129959A (en) * | 2011-01-05 | 2011-07-20 | 清华大学 | Wafer cleaning device and method for cleaning wafer by using same |
| CN103035504A (en) * | 2011-10-09 | 2013-04-10 | 中芯国际集成电路制造(北京)有限公司 | Chemical machinery polishing method and chemical machinery polishing device |
| CN103035504B (en) * | 2011-10-09 | 2016-07-06 | 中芯国际集成电路制造(北京)有限公司 | Cmp method and chemical-mechanical polisher |
| CN104400618B (en) * | 2014-09-23 | 2017-05-24 | 上海华力微电子有限公司 | Equipment and method for FinFET polycrystalline silicon chemical mechanical grinding |
| CN104400618A (en) * | 2014-09-23 | 2015-03-11 | 上海华力微电子有限公司 | Equipment and method for FinFET polycrystalline silicon chemical mechanical grinding |
| CN105990122B (en) * | 2015-02-15 | 2020-03-27 | 盛美半导体设备(上海)股份有限公司 | Method for reducing surface roughness of wafer |
| CN105990122A (en) * | 2015-02-15 | 2016-10-05 | 盛美半导体设备（上海）有限公司 | Method for reducing surface roughness of wafer |
| CN107199503A (en) * | 2016-03-18 | 2017-09-26 | 株式会社荏原制作所 | Lapping device and Ginding process |
| CN107199503B (en) * | 2016-03-18 | 2019-06-14 | 株式会社荏原制作所 | Grinding device and grinding method |
| CN109277940A (en) * | 2017-07-20 | 2019-01-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of chemical mechanical polishing device and chemical and mechanical grinding method |
| CN110216094A (en) * | 2018-03-02 | 2019-09-10 | 金铉泰 | The scaling powder cleaning systems of cleaning object can independently be cleaned |
| CN110216094B (en) * | 2018-03-02 | 2022-02-18 | 金铉泰 | Flux cleaning system capable of independently cleaning object |
| CN111002205A (en) * | 2019-12-19 | 2020-04-14 | 黄卫良 | Wafer polishing equipment for semiconductor |
| CN111002205B (en) * | 2019-12-19 | 2022-02-01 | 山东欧思特新材料科技有限公司 | Wafer polishing equipment for semiconductor |
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