CN201894999U - Cleaning device - Google Patents
Cleaning device Download PDFInfo
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- CN201894999U CN201894999U CN2010205651133U CN201020565113U CN201894999U CN 201894999 U CN201894999 U CN 201894999U CN 2010205651133 U CN2010205651133 U CN 2010205651133U CN 201020565113 U CN201020565113 U CN 201020565113U CN 201894999 U CN201894999 U CN 201894999U
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- Prior art keywords
- cleaning
- cleaning device
- brush
- bristle
- brush holder
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Abstract
The utility model provides a cleaning device for cleaning the polishing head of a chemical-mechanical polishing equipment.The cleaning device comprises a first cleaning brush and a second cleaning brush.The first cleaning brush comprises a first brush handle and a first brushing arranged at one end of the first brush handle.The first brushing is in contact with the side surface of the polishing head turned to be at a cleaning position.The second cleaning brush comprises a second brush handle and a second brushing arranged at one end of the second brush handle.The second brushing is in contact with a retaining ring at the bottom of the polishing head at the cleaning position.The polishing head of a chemical-mechanical polishing equipment can be effectively cleaned by utilizing the cleaning device. Especially the residues remained in the through troughs at the side surface and the bottom of the polishing head can be effectively removed, thereby preventing the crystallization growth of the residues, the scratch and the pollution to the wafer subject to the subsequent chemical polishing.
Description
Technical field
The utility model relates to semiconductor manufacturing equipment, relates in particular to a kind of cleaning device of rubbing head of chemical-mechanical polisher.
Background technology
Chemically mechanical polishing (Chemical Mechanical Polishing, CMP) technology is the technology of mechanical lapping and chemical reaction combination, chemical Mechanical Polishing Technique forms bright and clean smooth plane by the chemical attack effect of ultramicronized abrasive action and slurry on polished dielectric surface.Chemical Mechanical Polishing Technique is the product of integrated circuit (IC) to granular, multiple stratification, slimming, flatening process development, become the mainstream technology of semiconductor manufacturing, also be wafer to 200mm, 300mm and even bigger diameter excessively, enhance productivity, reduce the technology of manufacturing cost and substrate globalize planarization indispensability.Chemical Mechanical Polishing Technique has become the maincenter technology of semiconductor fabrication process.
A complete CMP process mainly is made up of operations such as polishing, back cleaning and measurements.Wherein the cleaning that comprises wafer is cleaned in the back, also comprises the cleaning to each parts of chemical-mechanical polisher.The purpose of back cleaning is that residual particles in the chemically mechanical polishing and pollution are reduced to acceptable level.In the prior art, described chemical-mechanical polisher comprises rubbing head, grinding plate and the cleaning part between grinding plate, the bottom surface of described rubbing head be provided be used for fixing wafer keep ring (Retainingring), the described ring of keeping also is provided with a plurality of grooves.In metal or medium CMP process, the rubbing head of chemical-mechanical polisher directly contacts with polishing fluid and wafer, cause that the polishing fluid bespatter is to rubbing head, the polishing fluid and the polishing fluid crystallization of the residual a lot of mixing of meeting also can residually have a lot of pollutants in the rubbing head side simultaneously in the groove of rubbing head bottom surface.
In the prior art, the cleaning polishing head adopts deionized water rinsing and utilizes the cleaning part between the grinding plate to wash, can't the mixing residue in the groove of rubbing head side and bottom surface thoroughly be cleaned, less abrasive grains has increased the difficulty of removing residue in the chemically mechanical polishing.These residues mainly are made up of metallic particles or other external material granules of polishing fluid (particle diameter changes in 0.1 to 1.0 micron or bigger scope), wafer surface.When being exposed in the air, these residues can crystallization become big, pollute the wafer of next group polishing by two kinds of approach, the particle of growing up in the residue directly pollutes or the scuffing chip back surface on the one hand, be that these residues enter polishing disk in the CMP process on the other hand, scratch or pollution wafer surface.These residues are wafer major defect sources at CMP process.The main two class defectives that form: the one, the pollution of residual polishing fluid, wafer surface metal or foreign material, the 2nd, the scratch of wafer surface, groove or pit, this two classes defective produces very big side effect to device yield.
Residue brings problem to an independent wafer incessantly.In CMP process, residue on the rubbing head may pollute chip back surface and surface, if residue can not get timely cleaning, along with the polishing number of times increases, residue also accumulates in the groove on rubbing head and propagates, thereby causes the cross pollution of wafer.And in CMP process, wafer adopts manipulator to take out from process cavity, and residual polishing fluid particle, metallic particles or other particles pass to chip back surface by rubbing head, and these particulates also may be propagated by manipulator, pollute other wafers.If these wafers are also contaminated, these residues can be assembled on mechanical arm, cause pollution accumulation.
Therefore need cleaning polishing head effectively.
The utility model content
The technical problems to be solved in the utility model is that a kind of device that can effectively clean the rubbing head of chemical-mechanical polisher is provided.
For addressing the above problem, the utility model provides a kind of cleaning device, be used to clean the rubbing head of chemical-mechanical polisher, described cleaning device is provided with first cleaning brush and second cleaning brush, described first cleaning brush includes first brush holder and is arranged on first bristle of described first brush holder, one end, described first bristle contacts with the side of the described rubbing head that forwards cleaning positions to, described second cleaning brush comprises second brush holder and is arranged on second bristle of described second brush holder, one end that described second bristle contacts with the retaining ring of the described rubbing head bottom surface that forwards cleaning positions to.
Described first brush holder and second brush holder are cylinder, can self revolve biography.
Further, the rotating speed of described first cleaning brush is 30～120 rev/mins
Further, the rotating speed of described second cleaning brush is 30～90 rev/mins.
Further, the length of described first cleaning brush is 6～10cm.
Preferable, the length of described first bristle is 1-4cm, and density is 60%～80%, and the diameter of described first bristle of each root is 0.5～2.5mm.
Preferable, the length of described second cleaning brush is 48-55mm.
Preferable, the length of described second bristle is 3.2～4mm, and density is 60%-80%, and the diameter of described second bristle of each root is 0.1-0.5mm.
Further, described cleaning device also comprises at least two deionized water shower nozzles, and described deionized water shower nozzle is positioned at by the described rubbing head.
Preferable, the diameter of the nozzle of described deionized water shower nozzle is 0.5-3mm.
Preferable, the flow velocity of described deionized water shower nozzle ejection deionized water is 0.1～0.2L/min.
Preferable, brush and pressure pin and removable ring all are pvc material.
Further, bristle is polyamide nylon-No. 6 or polyamide nylon-No. 10 material.
Further, the other end of described first brush holder is connected by first pressure pin on the board load plate of described chemical-mechanical polisher, and the other end of described second brush holder is connected on the board load plate of described chemical-mechanical polisher by second pressure pin.
In sum, cleaning equipment in the utility model can effectively wash the rubbing head of chemical-mechanical polisher, especially effectively wash the side of described rubbing head and the residue in the groove of bottom surface, and then avoid the residue crystal growth, the follow-up wafer that carries out chemical polishing is caused cut and pollution.
Description of drawings
Fig. 1 is the structural representation of cleaning device one embodiment of rubbing head in the utility model chemical-mechanical polisher.
Fig. 2 is the upward view of cleaning device one embodiment of rubbing head in the utility model chemical-mechanical polisher.
The specific embodiment
For making content of the present utility model clear more understandable,, content of the present utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in the protection domain of the present utility model.
Secondly, the utility model utilizes schematic diagram to carry out detailed statement, and when the utility model example was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as to qualification of the present utility model.
Core concept of the present utility model is: a kind of cleaning device is provided, in cleaning process, described cleaning device can effectively clean the rubbing head of described chemical-mechanical polisher, especially at the residue in the groove of the residue of the rubbing head side that is difficult to clean and rubbing head bottom surface, described cleaning device is provided with first cleaning brush of being close to the rubbing head side and second cleaning brush of being close to the rubbing head bottom surface, described rubbing head is scrubbed in described first, second cleaning brush rotation, thereby effectively cleans described rubbing head.
Fig. 1 is the structural representation of cleaning device one embodiment of rubbing head in the utility model chemical-mechanical polisher.Fig. 2 is the upward view of cleaning device one embodiment of rubbing head in the utility model chemical-mechanical polisher.As Fig. 1, Fig. 2 and in conjunction with core concept of the present utility model, the utility model provides a kind of cleaning device, described cleaning device is used to clean the rubbing head of chemical-mechanical polisher, described cleaning device is provided with first cleaning brush 201 and second cleaning brush 203, described first cleaning brush 201 includes the first brush holder 201b and is arranged on the first bristle 201a of the described first brush holder 201b, one end, the described first bristle 201a contacts with the side of the described rubbing head 101 that forwards cleaning positions to, described second cleaning brush 203 comprises the second brush holder 203b and is arranged on the second bristle 203a of the described second brush holder 203b, one end that the described second bristle 203a is close to the retaining ring 101a surface of described rubbing head 101 bottom surfaces that forward cleaning positions to.
Further, the other end of the described first brush holder 201b is connected on the board load plate 100 of described chemical-mechanical polisher by first pressure pin 207.Can remove and install between described first brush holder 201b and described first pressure pin 207, after described first cleaning brush 201 used a period of time, the first bristle 201a had wearing and tearing, described first cleaning brush 201 can be disassembled from first pressure pin 207 to change.
Further, the other end of the described second brush holder 203b is connected on the board load plate 100 of described chemical machinery exposure sources by second pressure pin 209, can remove and install between described second brush holder 203b and described second pressure pin 207, after described second cleaning brush 203 uses a period of time, the second bristle 203a has wearing and tearing, described second cleaning brush 203 can be disassembled from second pressure pin 209 to change.
Further, described cleaning device also comprises at least two deionized water shower nozzles 205, and described deionized water shower nozzle 205 is positioned at described rubbing head 101 sides.Deionized water shower nozzle 205 ejection deionized waters form hydraulic pressure when scrubbing, and wash away scrubbing the residue that gets off, and reach the purpose of thorough cleaning.Wherein preferable, the diameter of the nozzle of described deionized water shower nozzle 205 is 0.5-3mm, and the flow velocity of described deionized water shower nozzle 205 ejection deionized waters is 0.1～0.2L/min.
Preferable, the rotating speed of described first cleaning brush 201 is 30～120 rev/mins, and is preferable, the rotating speed of described second cleaning brush 203 is 30～90 rev/mins.Adopt above-mentioned rotating speed both can clean described rubbing head comparatively up hill and dale, simultaneously can be because of the too fast scratch rubbing head 101 of rotating speed.
Further, the length of described first cleaning brush 201 is 6～10cm.Preferable, the length of the described first bristle 201a is 1-4cm, and density is 60%～80%, and the diameter of described first bristle of each root is 0.5～2.5mm.
Preferable, the length of described second cleaning brush 203 is 48-55mm.Preferable, the length of the described second bristle 203a is 3.2～4mm, and density is 60%-80%, and the diameter of described second bristle of each root is 0.1-0.5mm.The length of described second cleaning brush 203 is suitable with the trench length on the retaining ring, if too shortly can not effectively clean complete groove, if long, might brush rubber membrane in the ring; The height of hair is suitable with the degree of depth and the width of groove, can reach effective cleaning performance.
Preferable, the material of the described first brush holder 201b and the second brush holder 203b all is a pvc material.Described pvc material uses in chemical environment, effectively anticorrosion, and pollution-free.
Further, the material polyamide nylon-of the first bristle 201a and the second bristle 203a No. 6 or polyamide nylon-No. 10 material.Polyamide nylon-No. 6 or polyamide nylon-No. 10 material use in chemical environment, effectively anticorrosion, and pollution-free.
The use of cleaning device described in the utility model: forward the rubbing head 101 of described chemical-mechanical polisher to cleaning positions, the first bristle 201a that first cleaning brush 201 forwards described rubbing head 201 to contacts with the side of the described rubbing head 101 that forwards cleaning positions to and carries out mechanical friction between second cleaning brush 203 and the rubbing head 101, by mechanical friction residue is removed from rubbing head 101, simultaneously described deionized water shower nozzle 205 spray deionized waters, pressure by ionized water washes away residue, in cleaning process, the rotating speed of described rubbing head is 1-35 rev/min, the rubbing head 101 of chemical-mechanical polisher is moved back to the operating position, with described first cleaning brush 201 of washed with de-ionized water and second cleaning brush 203, dry naturally the flushing back, finishes cleaning.
In sum, cleaning equipment in the utility model can effectively wash the rubbing head 101 of chemical-mechanical polisher, especially effectively wash the side of described rubbing head 101 and the residue among the groove 101b of bottom surface, and then avoid the residue crystal growth, the follow-up wafer that carries out chemical polishing is caused cut and pollution.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection domain of the present utility model is as the criterion when looking claims person of defining.
Claims (14)
1. cleaning device, be used to clean the rubbing head of chemical-mechanical polisher, it is characterized in that, described cleaning device is provided with first cleaning brush and second cleaning brush, described first cleaning brush includes first brush holder and is arranged on first bristle of described first brush holder, one end, described first bristle contacts with the side of the described rubbing head that forwards cleaning positions to, described second cleaning brush comprises second brush holder and is arranged on second bristle of described second brush holder, one end that described second bristle contacts with the retaining ring of the described rubbing head bottom surface that forwards cleaning positions to.
2. cleaning device as claimed in claim 1 is characterized in that, described first brush holder and second brush holder are cylinder.
3. cleaning device as claimed in claim 1 is characterized in that, the rotating speed of described first cleaning brush is 30～120 rev/mins
4. cleaning device as claimed in claim 1 is characterized in that, the rotating speed of described second cleaning brush is 30～90 rev/mins.
5. cleaning device as claimed in claim 1 is characterized in that, the length of described first cleaning brush is 6～10cm.
6. cleaning device as claimed in claim 1 is characterized in that, the length of described first bristle is 1-4cm, and density is 60%～80%, and the diameter of described first bristle of each root is 0.5～2.5mm.
7. cleaning device as claimed in claim 1 is characterized in that, the length of described second cleaning brush is 48-55mm.
8. cleaning device as claimed in claim 1 is characterized in that, the length of described second bristle is 3.2～4mm, and density is 60%-80%, and the diameter of described second bristle of each root is 0.1-0.5mm.
9. cleaning device as claimed in claim 1 is characterized in that, described cleaning device also comprises at least two deionized water shower nozzles, and described deionized water shower nozzle is positioned at by the described rubbing head.
10. cleaning device as claimed in claim 9 is characterized in that, the diameter of the nozzle of described deionized water shower nozzle is 0.5-3mm.
11. cleaning device as claimed in claim 9 is characterized in that, the flow velocity of described deionized water shower nozzle ejection deionized water is 0.1～0.2L/min.
12., it is characterized in that the material of described first brush holder and described second brush holder all is a pvc material as any described cleaning device in the claim 1 to 8.
13., it is characterized in that the material of first bristle and second bristle is polyamide nylon-No. 6 or polyamide nylon-No. 10 as any described cleaning device in the claim 1 to 8.
14. cleaning device as claimed in claim 1, it is characterized in that, the other end of described first brush holder is connected by first pressure pin on the board load plate of described chemical-mechanical polisher, and the other end of described second brush holder is connected on the board load plate of described chemical machinery exposure sources by second pressure pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205651133U CN201894999U (en) | 2010-10-16 | 2010-10-16 | Cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205651133U CN201894999U (en) | 2010-10-16 | 2010-10-16 | Cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201894999U true CN201894999U (en) | 2011-07-13 |
Family
ID=44252918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205651133U Expired - Fee Related CN201894999U (en) | 2010-10-16 | 2010-10-16 | Cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201894999U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711068A (en) * | 2017-01-17 | 2017-05-24 | 环旭电子股份有限公司 | Brushing device for electronic module and automatic brushing method for electronic module |
| CN111744877A (en) * | 2020-07-10 | 2020-10-09 | 温州明澈眼镜科技有限公司 | Automatic cleaning device for VR glasses lenses |
| CN113967876A (en) * | 2020-07-22 | 2022-01-25 | 泉芯集成电路制造(济南)有限公司 | Cleaning device of chemical mechanical grinder |
| CN115229684A (en) * | 2022-08-05 | 2022-10-25 | 北京特思迪半导体设备有限公司 | Self-adaptive structure brush and method for preventing surface residue of polishing solution |
-
2010
- 2010-10-16 CN CN2010205651133U patent/CN201894999U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711068A (en) * | 2017-01-17 | 2017-05-24 | 环旭电子股份有限公司 | Brushing device for electronic module and automatic brushing method for electronic module |
| CN111744877A (en) * | 2020-07-10 | 2020-10-09 | 温州明澈眼镜科技有限公司 | Automatic cleaning device for VR glasses lenses |
| CN113967876A (en) * | 2020-07-22 | 2022-01-25 | 泉芯集成电路制造(济南)有限公司 | Cleaning device of chemical mechanical grinder |
| CN115229684A (en) * | 2022-08-05 | 2022-10-25 | 北京特思迪半导体设备有限公司 | Self-adaptive structure brush and method for preventing surface residue of polishing solution |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130325 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130325 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110713 Termination date: 20181016 |