CN201046544Y - Rinsing apparatus for chemical machinery polisher - Google Patents
Rinsing apparatus for chemical machinery polisher Download PDFInfo
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- CN201046544Y CN201046544Y CNU2007200687283U CN200720068728U CN201046544Y CN 201046544 Y CN201046544 Y CN 201046544Y CN U2007200687283 U CNU2007200687283 U CN U2007200687283U CN 200720068728 U CN200720068728 U CN 200720068728U CN 201046544 Y CN201046544 Y CN 201046544Y
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Abstract
The utility model discloses a cleaning device for chemical mechanical polishing equipment, comprising an input port used for receiving wafer after being grinded by chemical machinery; an ultrasonic wave rinsing pool used for cleaning the wafer in ultrasonic wave; a first brushing pool used for brushing the two surfaces of the wafer; a second brushing pool, also used for brushing the two surfaces of the wafer; a drying compartment used for drying the wafer; an output port used for taking the wafer from a cleaning device; and a drying crystal boat used for storing the dried wafer transferred from the output port temporarily, and transferring the wafer to a storage box for the wafer of the chemical mechanical polishing system. The utility model has the advantages that the cleaning device of the chemical mechanical polishing equipment can avoid the wafer being immersed in cleaning liquid or being exposed in the air for long time, when fault occurs to the storage box.
Description
Technical field
The utility model relates to semiconductor technology, particularly the cleaning device of chemical-mechanical polisher.
Background technology
Chemically mechanical polishing (Chemical Mechanical Polishing, abbreviation CMP) technology is the combination technique of mechanical skiving and chemical attack, chemical Mechanical Polishing Technique acts on the bright and clean flat surfaces of formation on the polished dielectric surface by the abrasive action of ultramicron and the chemical attack of slurry, has now become the dominant technology of semiconductor machining industry.Chemically mechanical polishing is an integrated circuit (IC) to the product of miniaturization, multiple stratification, slimming, flatening process development, also is wafer to 200mm, 300mm and even larger diameter transition, enhances productivity, reduces the technology of manufacturing cost and substrate globalize planarization indispensability.For instance, typical logical device comprises seven road inner medium layer CMP operations, seven road metal CMP operations with shallow trench isolation from (STI) CMP operation.Therefore say that CMP technology has become the maincenter technology of the semiconductor technology of preparation integrated circuit.
A complete CMP technology mainly is made up of operations such as polishing, back cleaning and measurements.Wherein the cleaning that comprises wafer is cleaned in the back, also comprises the cleaning to each parts of chemical-mechanical polishing mathing.The purpose of back cleaning is that residual particles among the CMP and contamination are reduced to acceptable level.At present, the back cleaning of CMP technology relates generally to the cleaning of the polishing pad of wafer after the CMP technology and CMP equipment, for example, company of Applied Materials (
Www.appliedmaterials.com) Mirra Mesa chemical-mechanical polisher is disclosed, the wafer cleaning device after the polishing that this equipment is integrated.As shown in Figure 1, after wafer is finished chemically mechanical polishing, wafer is sent to wafer cleaning device by conveying trough 2.This wafer cleaning device uses ultrasonic cleaning technology and the two-sided technology of scrubbing to remove subparticle residual on the wafer and abrasive slurry.This wafer cleaning device comprises six parts as shown in Figure 1: input port 31 is used to receive the wafer after chemically mechanical polishing that conveying trough 2 transmits; Ultrasonic wave service sink 32 comprises a cavity of filling cleaning fluid, and the utilization ultrasonic wave cleans the wafer of input port 31 incomes; First scrubs pond 33, comprises spray head and two cleaning brush that can spray cleaning fluid, is used for the cleaning fluid spray is also scrubbed two surfaces of wafer simultaneously on two surfaces of the wafer that cleans through ultrasonic wave; Second scrubs pond 34, comprises spray head and two cleaning brush that can spray cleaning fluid, is used for the cleaning fluid spray is also being scrubbed two surfaces of wafer simultaneously through first two surfaces scrubbing the wafer of scrubbing in pond 33; Drying room 35, comprise the spray head that can spray cleaning fluid and can drive the spacer wafer that wafer rotates at a high speed, by to continue removing hangover on wafer surface through the second surface sprinkling cleaning fluid of scrubbing the wafer of scrubbing in pond 34, driving wafer by spacer wafer rotates at a high speed, get rid of away the cleaning fluid of crystal column surface, make drying wafer; Delivery outlet 36 is used for the wafer of drying is sent, and is transferred to the wafer storage box 1 of chemical-mechanical polisher.
At present, when the wafer storage box 1 of chemical-mechanical polisher broke down, delivery outlet 36 can can't be delivered to wafer storage box 1 with wafer and cause wafer to be stranded in the delivery outlet 36, also causes wafer to be stranded in the various piece of wafer cleaning device.Existing way is to open the hermatic door of wafer cleaning device various piece, and wafer is all taken out, and when getting rid of etc. fault, wafer is reentered into the various piece of wafer cleaning device again.Yet, like this following adverse consequences will appear:
1. the process of taking out wafer is slower, causes ultrasonic wave service sink, first to scrub the pond and second wafer of scrubbing in the pond is soaked in the cleaning fluid for a long time, surpasses 5 minutes and will scrap and be soaked in wafer in the cleaning fluid.
2. therefore the taking-up of wafer and put into and all can cause Wafer exposure in the middle of air can increase the subparticle of crystal column surface, polluting wafer.
The utility model content
The problem that the utility model solves is to avoid wafer to be soaked in the cleaning fluid for a long time.
The problem that the utility model also solves is to avoid Wafer exposure in the middle of air.
For addressing the above problem, the utility model provides a kind of cleaning device of chemical-mechanical polisher, comprising:
The input port is a closed cavity, is used to receive the wafer after chemically mechanical polishing;
The ultrasonic wave service sink comprises one and fills the cavity of cleaning fluid and supersonic generator wherein, is used for by ultrasonic wave the wafer that the wafer transferring arm sends from the input port being cleaned;
First scrubs the pond, is a closed cavity, comprises spray head and two cleaning brush that can spray cleaning fluid, is used for two surfaces of wafer that cleaning fluid spray is sent from the ultrasonic wave service sink at the wafer transferring arm and simultaneously two surfaces of wafer is scrubbed;
Second scrubs the pond, is a closed cavity, comprises spray head and two cleaning brush that can spray cleaning fluid, is used for cleaning fluid spray is scrubbed two surfaces of the wafer that the pond sends and simultaneously two surfaces of wafer scrubbed from first at the wafer transferring arm;
Drying room, it is a closed cavity, comprise the spray head that can spray cleaning fluid and can drive the spacer wafer that wafer rotates, be used for cleaning fluid spray at the wafer transferring arm from second surface of scrubbing the wafer that the pond sends, to remove the residue of crystal column surface, drive the wafer rotation by spacer wafer, get rid of away the cleaning fluid of crystal column surface, make drying wafer;
Delivery outlet is a closed cavity, and the wafer that the wafer transferring arm sends from drying room is delivered to dry brilliant boat;
Dry brilliant boat is semi-enclosed cavity, and opening is sent mouth near the wafer of delivery outlet, is used for temporarily depositing the wafer of the drying that delivery outlet transmits, and is transferred to the wafer storage box of chemical-mechanical polishing system.
Compared with prior art, the utlity model has following advantage:
1. the cleaning device of the utility model chemical-mechanical polisher is deposited the wafer that delivery outlet transmits by increasing dry brilliant boat temporarily, when the wafer storage box of chemical-mechanical polisher breaks down, wafer is unlikely the normal operation that influence cleaning device because be trapped in the delivery outlet, so has avoided wafer to be soaked in for a long time in the cleaning fluid and scrap;
2. the cleaning device of the utility model chemical-mechanical polisher is deposited the wafer that delivery outlet transmits by increasing dry brilliant boat temporarily, when the wafer storage box of chemical-mechanical polisher breaks down, therefore wafer in the cleaning device also needn't all take out, and has avoided Wafer exposure in the middle of air and wafer is polluted.
Description of drawings
Fig. 1 is the cleaning device figure of prior art chemical-mechanical polisher;
Fig. 2 is the defect distribution design sketch of cleaning device after chemical wafer cleans of prior art chemical-mechanical polisher;
Fig. 3 is the cleaning device figure of the utility model chemical-mechanical polisher;
Fig. 4 is the defect distribution design sketch after the cleaning device wafer of the utility model chemical-mechanical polisher cleans.
The specific embodiment
The cleaning device of the utility model chemical-mechanical polisher is by increasing dry brilliant boat on the delivery outlet side, deposit the wafer that delivery outlet transmits temporarily, thereby avoided when the wafer storage box of chemical-mechanical polisher breaks down, wafer be immersed in the cleaning fluid for a long time or Wafer exposure in air.
Fig. 3 provides the embodiment of the cleaning device of the utility model chemical-mechanical polisher, and as shown in Figure 3, the cleaning device 30 of the utility model chemical-mechanical polisher comprises:
Ultrasonic wave service sink 302 comprises a cavity of filling cleaning fluid and supersonic generator wherein, is used for that 301 wafers that send clean from the input port to the wafer transferring arm by ultrasonic wave;
Dry brilliant boat 307 is semi-enclosed cavity, and opening is sent mouth near the wafer of delivery outlet 306, is used for temporarily depositing the wafer of the drying that delivery outlet 306 transmits, and is transferred to the wafer storage box 10 of chemical-mechanical polishing system.
Described cleaning fluid is that concentration is 30% citric acid solution.
Described cleaning brush is the brush that cylindric intermediate hollow outer surface has kick.
The brilliant boat of described drying can carry 6 wafer at least, is generally 7～15 wafer.
Describe the advantage of the cleaning device of the utility model chemical-mechanical polisher in detail below by the example of practical operation:
Behind wafer process cmp, just need be by wafer being cleaned to remove subparticle and the abrasive slurry that crystal column surface may be residual.When wafer was cleaned, the mechanical arm in the input port 301 grasped the wafer after chemically mechanical polishing that conveying trough 20 sends.Subsequently, wafer transferring arm grasping silicon wafer from input port 301 is sent in the cavity of ultrasonic wave service sink 302, when ultrasonic wave service sink 302 detects when in the cavity wafer being arranged, promptly start concentration in the supersonic generator vibrations cavity and be 30% citric acid solution wafer is cleaned.When the ultrasonic wave of wafer is cleaned finish after, the wafer transferring arm crawls out wafer from ultrasonic wave service sink 302 and is sent to first and scrubs pond 303.Scrub pond 303 and detect when in it wafer being arranged when first, promptly starting spray head is 30% citric acid solution to two surface sprinkling concentration of wafer, starts cleaning brush simultaneously and scrubs for two surfaces of wafer.After scrubbing of wafer finished, the wafer transferring arm was scrubbed the pond 303 wafer crawled out from first and is sent to second and scrubs pond 304.Scrub pond 304 and detect when in it wafer being arranged when second, promptly starting spray head is 30% citric acid solution to two surface sprinkling concentration of wafer, starts cleaning brush simultaneously and scrubs for two surfaces of wafer.After scrubbing of wafer finished, the wafer transferring arm was scrubbed the pond 304 wafer crawled out from second and is sent to drying room 305.When drying room 305 detects when in it wafer being arranged, promptly start spray head and be 30% citric acid solution to two surface sprinkling concentration of wafer, to remove the residue of crystal column surface, subsequently, drying room 305 starts spacer wafer, the drive wafer rotates, and gets rid of away the citric acid solution of crystal column surface, so that drying wafer.After finishing drying wafer, the wafer transferring arm crawls out wafer from drying room 305 and is sent to delivery outlet 306.When delivery outlet 306 receives the wafer of drying room 305 transmission, be about to wafer and be sent to dry brilliant boat 307.When the wafer storage box 1 of chemical-mechanical polisher just often, dry brilliant boat 307 can directly send the wafer that delivery outlet 306 transmits to wafer storage box 1.And when the wafer storage box 1 of chemical-mechanical polisher breaks down, dry brilliant boat 307 will temporarily be deposited wafer, remain delivery outlet 306 and be in the state that can receive and transmit wafer, guaranteed the normal operation of cleaning device, after the trouble shooting of wafer storage box 1, dry brilliant boat 307 promptly can continue wafer to send to wafer storage box 1.And when guaranteeing that wafer storage box 1 breaks down, wafer in the cleaning device 30 can be by delivery outlet 306 normal transmission to dry brilliant boat 307, dry brilliant boat 307 is set at and can carries at least 6 wafer, and the general dry brilliant boat 307 that adopts can carry the 7-15 wafer.
As seen from Figure 2, when the cleaning device 3 of prior art chemical-mechanical polisher breaks down when the wafer storage box 1 of chemical-mechanical polisher, owing to need from cleaning device, all to take out wafer, make Wafer exposure in air, increased the subparticle of crystal column surface.Even after the trouble shooting of wafer storage box 1, wafer is put back to cleaning device 3 through after cleaning once more, and the subparticle of remained on surface still has a lot; And as can see from Figure 4, when the cleaning device of the utility model chemical-mechanical polisher breaks down when the wafer storage box of chemical-mechanical polisher, owing to can deposit the wafer that delivery outlet is sent temporarily by the brilliant boat of drying, therefore needn't from cleaning device, take out wafer, also avoided Wafer exposure in air, thereby the residual subparticle of the crystal column surface after cleaning device cleans seldom.
In sum, the cleaning device of the utility model chemical-mechanical polisher is by increasing dry brilliant boat on the delivery outlet side, deposit the wafer that delivery outlet transmits temporarily, thereby avoided when the wafer storage box of chemical-mechanical polisher breaks down, wafer is immersed in for a long time in the cleaning fluid and causes wafer loss, and Wafer exposure is in air and cause wafer to be polluted.
Claims (4)
1. the cleaning device of a chemical-mechanical polisher is characterized in that, comprising:
The input port is a closed cavity, is used to receive the wafer after chemically mechanical polishing;
The ultrasonic wave service sink comprises one and fills the cavity of cleaning fluid and supersonic generator wherein, is used for by ultrasonic wave the wafer that the wafer transferring arm sends from the input port being cleaned;
First scrubs the pond, is a closed cavity, comprises spray head and two cleaning brush that can spray cleaning fluid, is used for two surfaces of wafer that cleaning fluid spray is sent from the ultrasonic wave service sink at the wafer transferring arm and simultaneously two surfaces of wafer is scrubbed;
Second scrubs the pond, is a closed cavity, comprises spray head and two cleaning brush that can spray cleaning fluid, is used for cleaning fluid spray is scrubbed two surfaces of the wafer that the pond sends and simultaneously two surfaces of wafer scrubbed from first at the wafer transferring arm;
Drying room, it is a closed cavity, comprise the spray head that can spray cleaning fluid and can drive the spacer wafer that wafer rotates, be used for cleaning fluid spray at the wafer transferring arm from second surface of scrubbing the wafer that the pond sends, to remove the residue of crystal column surface, drive the wafer rotation by spacer wafer, get rid of away the cleaning fluid of crystal column surface, make drying wafer;
Delivery outlet is a closed cavity, and the wafer that the wafer transferring arm sends from drying room is delivered to dry brilliant boat;
Dry brilliant boat is semi-enclosed cavity, and opening is sent mouth near the wafer of delivery outlet, is used for temporarily depositing the wafer of the drying that delivery outlet transmits, and is transferred to the wafer storage box of chemical-mechanical polishing system.
2. the cleaning device of chemical-mechanical polisher as claimed in claim 1 is characterized in that, described cleaning brush is the brush that cylindric intermediate hollow outer surface has kick.
3. the cleaning device of chemical-mechanical polisher as claimed in claim 1 is characterized in that, the brilliant boat of described drying can carry 6 wafer at least.
4. the cleaning device of chemical-mechanical polisher as claimed in claim 3 is characterized in that, the brilliant boat of described drying can carry the 7-15 wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200687283U CN201046544Y (en) | 2007-04-03 | 2007-04-03 | Rinsing apparatus for chemical machinery polisher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200687283U CN201046544Y (en) | 2007-04-03 | 2007-04-03 | Rinsing apparatus for chemical machinery polisher |
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| Publication Number | Publication Date |
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| CN201046544Y true CN201046544Y (en) | 2008-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2007200687283U Expired - Lifetime CN201046544Y (en) | 2007-04-03 | 2007-04-03 | Rinsing apparatus for chemical machinery polisher |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102441843A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Internal cleaning structure for CMP (Chemical Mechanical Polishing) machine station and method thereof |
| CN102513917A (en) * | 2011-12-22 | 2012-06-27 | 上海宏力半导体制造有限公司 | Chemically mechanical polishing pretreatment method |
| CN103659569A (en) * | 2012-09-25 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method, modules and devices |
| CN103913959A (en) * | 2014-03-27 | 2014-07-09 | 京东方科技集团股份有限公司 | Photoresist stripping device and method |
| CN105150073A (en) * | 2015-09-30 | 2015-12-16 | 江苏宏联环保科技有限公司 | Polishing machine with board ultrasonic-wave cleaning and drying functions |
| CN106944381A (en) * | 2016-01-06 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device and its cleaning method |
| CN107470266A (en) * | 2017-09-25 | 2017-12-15 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | The rear cleaning method of oxide wafer in a kind of CMP process |
| CN108428623A (en) * | 2018-04-09 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | Semiconductor device fabrication method |
| CN108511361A (en) * | 2017-02-24 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | Wafer transfer device and its application process |
| CN109227359A (en) * | 2018-10-19 | 2019-01-18 | 清华大学 | The post-processing unit of chemical-mechanical polishing system and method, wafer |
| WO2019047379A1 (en) * | 2017-09-11 | 2019-03-14 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Post cleaning method for tungsten chemical mechanical planarization, and wafer |
| CN109946929A (en) * | 2019-04-12 | 2019-06-28 | 江苏汇成光电有限公司 | A kind of IC chip photoresist removal device and technique |
| CN110039441A (en) * | 2019-01-14 | 2019-07-23 | 杭州众硅电子科技有限公司 | A kind of based CMP apparatus |
| CN110517975A (en) * | 2019-08-08 | 2019-11-29 | 若名芯半导体科技(苏州)有限公司 | Cleaning device and its cleaning method after a kind of CMP |
| CN110767534A (en) * | 2019-10-28 | 2020-02-07 | 苏师大半导体材料与设备研究院(邳州)有限公司 | Wafer cleaning method |
| CN110815035A (en) * | 2019-11-14 | 2020-02-21 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization equipment combining grinding and single-wafer cleaning module |
| WO2020077649A1 (en) * | 2018-10-15 | 2020-04-23 | 杭州众硅电子科技有限公司 | Cmp wafer cleaning apparatus |
| WO2020078190A1 (en) * | 2018-10-15 | 2020-04-23 | 杭州众硅电子科技有限公司 | Cmp wafer cleaning apparatus, and wafer transfer manipulator and wafer overturn method for same |
| CN113105865A (en) * | 2021-03-22 | 2021-07-13 | 长江存储科技有限责任公司 | Wafer grinding particles, polishing solution and cleaning system |
-
2007
- 2007-04-03 CN CNU2007200687283U patent/CN201046544Y/en not_active Expired - Lifetime
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102441843B (en) * | 2011-08-29 | 2014-12-10 | 上海华力微电子有限公司 | Internal cleaning structure for CMP (Chemical Mechanical Polishing) machine station and method thereof |
| CN102441843A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Internal cleaning structure for CMP (Chemical Mechanical Polishing) machine station and method thereof |
| CN102513917A (en) * | 2011-12-22 | 2012-06-27 | 上海宏力半导体制造有限公司 | Chemically mechanical polishing pretreatment method |
| CN102513917B (en) * | 2011-12-22 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | Chemically mechanical polishing preprocess method |
| CN103659569A (en) * | 2012-09-25 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method, modules and devices |
| CN103913959A (en) * | 2014-03-27 | 2014-07-09 | 京东方科技集团股份有限公司 | Photoresist stripping device and method |
| CN105150073A (en) * | 2015-09-30 | 2015-12-16 | 江苏宏联环保科技有限公司 | Polishing machine with board ultrasonic-wave cleaning and drying functions |
| CN106944381A (en) * | 2016-01-06 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device and its cleaning method |
| CN108511361A (en) * | 2017-02-24 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | Wafer transfer device and its application process |
| WO2019047379A1 (en) * | 2017-09-11 | 2019-03-14 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Post cleaning method for tungsten chemical mechanical planarization, and wafer |
| CN107470266A (en) * | 2017-09-25 | 2017-12-15 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | The rear cleaning method of oxide wafer in a kind of CMP process |
| CN108428623B (en) * | 2018-04-09 | 2020-07-31 | 上海华虹宏力半导体制造有限公司 | Semiconductor device processing method |
| CN108428623A (en) * | 2018-04-09 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | Semiconductor device fabrication method |
| KR102709839B1 (en) * | 2018-10-15 | 2024-09-24 | 항저우 중구이 일렉트로닉 테크놀로지 컴퍼니 리미티드 | A kind of CMP wafer cleaning device, wafer transfer machine hand and wafer rotation method |
| US11908720B2 (en) | 2018-10-15 | 2024-02-20 | Hangzhou Sizone Electronic Technology Inc. | CMP wafer cleaning equipment, wafer transfer robot and wafer flipping method |
| KR20210063423A (en) * | 2018-10-15 | 2021-06-01 | 항저우 중구이 일렉트로닉 테크놀로지 컴퍼니 리미티드 | A type of CMP wafer cleaning device, wafer transfer machine hand and wafer rotation method |
| WO2020077649A1 (en) * | 2018-10-15 | 2020-04-23 | 杭州众硅电子科技有限公司 | Cmp wafer cleaning apparatus |
| WO2020078190A1 (en) * | 2018-10-15 | 2020-04-23 | 杭州众硅电子科技有限公司 | Cmp wafer cleaning apparatus, and wafer transfer manipulator and wafer overturn method for same |
| CN109227359A (en) * | 2018-10-19 | 2019-01-18 | 清华大学 | The post-processing unit of chemical-mechanical polishing system and method, wafer |
| CN110039441A (en) * | 2019-01-14 | 2019-07-23 | 杭州众硅电子科技有限公司 | A kind of based CMP apparatus |
| CN109946929A (en) * | 2019-04-12 | 2019-06-28 | 江苏汇成光电有限公司 | A kind of IC chip photoresist removal device and technique |
| CN110517975A (en) * | 2019-08-08 | 2019-11-29 | 若名芯半导体科技(苏州)有限公司 | Cleaning device and its cleaning method after a kind of CMP |
| CN110767534A (en) * | 2019-10-28 | 2020-02-07 | 苏师大半导体材料与设备研究院(邳州)有限公司 | Wafer cleaning method |
| CN110815035A (en) * | 2019-11-14 | 2020-02-21 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization equipment combining grinding and single-wafer cleaning module |
| CN113105865A (en) * | 2021-03-22 | 2021-07-13 | 长江存储科技有限责任公司 | Wafer grinding particles, polishing solution and cleaning system |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
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Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING (SHANGHAI) INTERNATIONAL CORPORATION Effective date: 20121105 |
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Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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| TR01 | Transfer of patent right |
Effective date of registration: 20121105 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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| CX01 | Expiry of patent term |
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| CX01 | Expiry of patent term |