CN107398780A - A kind of twin polishing method of wafer - Google Patents
A kind of twin polishing method of wafer Download PDFInfo
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- CN107398780A CN107398780A CN201610332985.7A CN201610332985A CN107398780A CN 107398780 A CN107398780 A CN 107398780A CN 201610332985 A CN201610332985 A CN 201610332985A CN 107398780 A CN107398780 A CN 107398780A
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 229920006254 polymer film Polymers 0.000 claims abstract description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000012530 fluid Substances 0.000 claims abstract description 27
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 23
- 239000003082 abrasive agent Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- 230000004087 circulation Effects 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229920003169 water-soluble polymer Polymers 0.000 claims description 15
- 239000004094 surface-active agent Substances 0.000 claims description 14
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 238000007517 polishing process Methods 0.000 claims description 9
- 239000011378 shotcrete Substances 0.000 claims description 7
- 239000012190 activator Substances 0.000 claims description 6
- -1 sulfoethyl Chemical group 0.000 claims description 6
- 229920002678 cellulose Polymers 0.000 claims description 5
- 239000001913 cellulose Substances 0.000 claims description 5
- 229920002907 Guar gum Polymers 0.000 claims description 4
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 4
- 229920003065 carboxyethylmethyl cellulose Polymers 0.000 claims description 4
- 229920002301 cellulose acetate Polymers 0.000 claims description 4
- 239000000665 guar gum Substances 0.000 claims description 4
- 235000010417 guar gum Nutrition 0.000 claims description 4
- 229960002154 guar gum Drugs 0.000 claims description 4
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims description 4
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims description 4
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims description 4
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims description 4
- 229920000609 methyl cellulose Polymers 0.000 claims description 4
- 239000001923 methylcellulose Substances 0.000 claims description 4
- 235000010981 methylcellulose Nutrition 0.000 claims description 4
- 229920001285 xanthan gum Polymers 0.000 claims description 4
- RPZANUYHRMRTTE-UHFFFAOYSA-N 2,3,4-trimethoxy-6-(methoxymethyl)-5-[3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxyoxane;1-[[3,4,5-tris(2-hydroxybutoxy)-6-[4,5,6-tris(2-hydroxybutoxy)-2-(2-hydroxybutoxymethyl)oxan-3-yl]oxyoxan-2-yl]methoxy]butan-2-ol Chemical compound COC1C(OC)C(OC)C(COC)OC1OC1C(OC)C(OC)C(OC)OC1COC.CCC(O)COC1C(OCC(O)CC)C(OCC(O)CC)C(COCC(O)CC)OC1OC1C(OCC(O)CC)C(OCC(O)CC)C(OCC(O)CC)OC1COCC(O)CC RPZANUYHRMRTTE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 3
- 229920003090 carboxymethyl hydroxyethyl cellulose Polymers 0.000 claims description 3
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 3
- 239000003513 alkali Substances 0.000 abstract description 14
- 238000000149 argon plasma sintering Methods 0.000 abstract description 14
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 185
- 239000000243 solution Substances 0.000 description 118
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- 230000000694 effects Effects 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
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- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
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- 230000008595 infiltration Effects 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- SFNALCNOMXIBKG-UHFFFAOYSA-N ethylene glycol monododecyl ether Chemical compound CCCCCCCCCCCCOCCO SFNALCNOMXIBKG-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B39/00—Burnishing machines or devices, i.e. requiring pressure members for compacting the surface zone; Accessories therefor
- B24B39/06—Burnishing machines or devices, i.e. requiring pressure members for compacting the surface zone; Accessories therefor designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a kind of twin polishing method of wafer, comprises the following steps：S1：By wafer load in the otch of carrier plate, it is placed between the upper polishing disk covered with upper polishing pad and the lower polishing disk covered with lower polishing pad；S2：The wafer and it is described on supply polishing fluid between polishing pad, lower polishing pad, the wafer frontside and the back side are polished, and the wafer rear formed a thin polymer film；S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the polishing fluid on the wafer, upper polishing pad and lower polishing pad.Thin polymer film can be formed during the twin polishing of the present invention in wafer rear, effectively wafer rear is isolated with the high-alkali rough polishing solution that rough polishing step remains, and wafer rear is isolated with the chemical reagent that follow-up hydrophilicity-imparting treatment uses, so as to inhibit the etching of wafer rear, the local light-scattering body quality and roughness quality of wafer rear are improved.
Description
Technical field
The invention belongs to field of semiconductor manufacture, it is related to a kind of twin polishing method of wafer.
Background technology
Semiconductor crystal wafer generally by single crystal rod, implements grinding, cleaning in the semiconductor wafer to being cut from single crystal rod
After etching step, polishing is implemented by the surface polished to semiconductor wafer.
Generally, in order to realize the polishing precision of silicon wafer, reach the technical indicator of integrated circuits silicon wafers requirement, need
Carry out two step polishings：Rough polishing and finishing polish.Rough polishing photoreduction process generally includes the polishing at wafer frontside and the back side, finishing polish process
Generally only for wafer frontside.When carrying out step chemical mechanical polishing to silicon wafer surface, polished used in often step polishing
Liquid and corresponding polishing technological conditions are different, and it is also different that corresponding silicon wafer respectively walks the machining accuracy to be reached.
In rough polishing step, the surface damage layer under silicon wafer cutting and shaping residual is removed, minute surface is processed into, finally by silicon
Chip carries out " defogging " finishing polish, so as to reduce rough surface and other tiny flaws to the full extent.
In the case of single-sided polishing (Single Side Polishing, SSP), in process by semiconductor die
Piece keeps at its back side on the supporting plate by cementing, vacuum or by bonding, and is polished on another side.In two-sided throwing
In the case of light (Double Side Plolishing, DSP), semiconductor wafer is loosely inserted into thin support plate (carrier
Plate in), and between the upper polishing disk and lower polishing disk of each free polishing pad (pad) covering in a manner of " freely floating "
It is polished simultaneously on the front and back.The polishing agent slurries of silicon dioxide gel are typically based on to implement the polishing by providing
Method.Prior art also discloses the grinding agent (" fixed abrasive polishing ", FAP) using fixed bonding, wherein semiconductor
Chip polishes on polishing pad, and the polishing pad and other polishing pad differences are bonded in grinding in polishing pad containing in it
Grind material (" fixed abrasive " or FA are padded).German patent application DE102007035266A1, which describes, to be padded using FA, for throwing
The method of the substrate of light silicon materials composition.
Compared with single-sided polishing (SSP), the synchronous double-side polishing (DSP) of semiconductor wafer is not only more economical, but also can
Obtain higher flatness for semiconductor wafer surface.
Polishing fluid (Slurry) is one of key element in glossing, and its performance directly affects crystal column surface after polishing
Quality.Polishing fluid is typically by ultrafine solids particle grinding agent (such as nanoscale SiO2、Al2O3Particle etc.), it is surfactant, steady
Determine the composition such as agent, oxidant.Solids provide abrasive action, and chemical oxidizing agent provides corrosion dissolution effect.
Existing twin polishing technique includes following flow：(1) price fixing decline is contacted with pressurization and price fixing after lower price fixing on
Rotation；(2) it is preliminary to remove：Removing natural oxidizing layer is gone using circulation rough polishing solution；(3) main body removes：Using circulation rough polishing solution
Remove default polished amount；(4) deionized water rinsing：Step rough polishing solution contacts before control；(5) surfactant is handled：Make
Crystal column surface hydrophiling, control roughness and nanometer quality；(6) remove the surfactant on polishing pad and suppress polishing pad figure
Case is formed.
In existing twin polishing technique, because the higher pH value of rough polishing solution (stock slurry) influences, processing
The high-alkali rough polishing solution remained in afterwards on price fixing polishing pad can cause crystal column surface corrode phenomenon, deteriorate wafer roughness and
LLS (local light scattering, local light-scattering body) quality.Particularly, the wafer contacted with lower price fixing polishing pad
The LLS and roughness quality at the back side, have the tendency of inferior position in wafer frontside.
Therefore, how a kind of twin polishing method of wafer is provided, the corrosion of wafer rear after being polished with reduction, is improved
LLS and wafer roughness, turn into those skilled in the art's important technological problems urgently to be resolved hurrily.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of twin polishing side of wafer
Method, for solving in wafer twin polishing technique in the prior art, because high-alkali rough polishing solution residual causes wafer rear to corrode,
So that the problem of wafer roughness quality and LLS qualities reduce.
In order to achieve the above objects and other related objects, the present invention provides a kind of twin polishing method of wafer, including such as
Lower step：
S1：By wafer load in the otch of carrier plate, be placed in upper polishing disk covered with upper polishing pad with covered with
Between the lower polishing disk of lower polishing pad；
S2：The wafer and it is described on supply polishing fluid between polishing pad, lower polishing pad, to the wafer frontside and the back of the body
Face is polished, and forms a thin polymer film in the wafer rear；
S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the wafer, on
Polishing fluid on polishing pad and lower polishing pad.
Alternatively, the step S2 includes：
S2-1：Rough polishing is carried out to the wafer in polishing first stage supply rough polishing solution, removes the oxygen of crystal column surface
Change layer；
S2-2：Rough polishing is carried out to the wafer in polishing second stage supply rough polishing solution, removes predetermined amount wafer material
Material；
S2-3：Stop supply rough polishing solution in the polishing phase III, and supply precise polishing solution and smart throwing is carried out to the wafer
Light；Wherein, polymer is included in the precise polishing solution, during finishing polish, the polymer is incorporated into the wafer rear,
Form the thin polymer film.
Alternatively, the abrasive material in the rough polishing solution includes the one or more in silica, aluminum oxide and cerium oxide；Institute
Stating abrasive material in precise polishing solution includes one or more in silica, aluminum oxide and cerium oxide, or the precise polishing solution is
Polishing agent solution not comprising abrasive material.
Alternatively, in the step S2-1 and step S2-2, the rough polishing solution is circulation rough polishing solution；In described
In step S2-3, the precise polishing solution does not enter circulation.
Alternatively, the pH value that rough polishing solution is circulated by adding KOH is maintained in the range of 10.5~11.
Alternatively, in the step S2-1, the polish pressure scope that is loaded on the wafer is 0.01~
0.20daN/cm2, a length of 1~5min during polishing；In the step S2-2, the polish pressure scope that is loaded on the wafer
It is 0.01~0.20daN/cm2, a length of 20~40min during polishing；In the step S2-3, the throwing that is loaded on the wafer
Light pressure scope is 0.01~0.05daN/cm2, a length of 1~5min during polishing.
Alternatively, in step S2-1, S2-2 or S2-3, the rotary speed of the upper polishing disk is 20~40rpm,
The rotary speed of the lower polishing disk is -10~-40rpm.
Alternatively, the step S2 includes：
S2-1：The wafer is polished in polishing first stage supply rough polishing solution, removes the oxidation of crystal column surface
Layer；
S2-2：The wafer is polished in polishing second stage supply rough polishing solution, removes predetermined amount wafer material；
S2-3：The wafer is thrown in rough polishing solution of the polishing phase III supply added with water-soluble polymer
Light, in polishing process, the polymer is incorporated into the wafer rear, forms the thin polymer film.
Alternatively, in the step S2-3, the addition of the water-soluble polymer is less than 1wt%, adds the water
After soluble polymer, the viscosity of the rough polishing solution is 5-15cps.
Alternatively, the abrasive material in the rough polishing solution includes the one or more in silica, aluminum oxide and cerium oxide.
Alternatively, in the step S2-1 and step S2-2, the rough polishing solution is circulation rough polishing solution；In described
In step S2-3, the rough polishing solution added with water-soluble polymer does not enter circulation.
Alternatively, the step S2 includes：
S2-1：The wafer is polished in polishing first stage supply rough polishing solution, removes the oxidation of crystal column surface
Layer；
S2-2：Rough polishing solution and precise polishing solution are supplied in polishing second stage simultaneously to be polished the wafer, are removed
Predetermined amount wafer material；Polymer is included in the precise polishing solution, in polishing process, the polymer is incorporated into the wafer
The back side, form the thin polymer film.
Alternatively, the abrasive material in the rough polishing solution or precise polishing solution includes one in silica, aluminum oxide and cerium oxide
Kind is a variety of.
Alternatively, the step S2 includes：
S2-1：Rough polishing solution and precise polishing solution are supplied in the polishing first stage simultaneously to be polished the wafer, are removed
The oxide layer of crystal column surface；
S2-2：Rough polishing solution and precise polishing solution are supplied in polishing second stage simultaneously to be polished the wafer, are removed
Predetermined amount wafer material；Polymer is included in the precise polishing solution, in polishing process, the polymer is incorporated into the wafer
The back side, form the thin polymer film.
Alternatively, the abrasive material in the rough polishing solution or precise polishing solution includes one in silica, aluminum oxide and cerium oxide
Kind is a variety of.
Alternatively, in addition to step S4：The wafer and it is described between polishing pad, lower polishing pad supply surface activity
Agent solution, make the crystal column surface hydrophiling.
Alternatively, in addition to step S5：Rise the upper polishing disk, by the wafer from the upper polishing disk with it is described under
Unload and set out between polishing disk, and the table remained on the upper polishing pad and lower polishing pad is removed using high pressure plasma water gunite
Face activating agent.
Alternatively, the polymer includes guar gum, xanthans, cellulose acetate, sulfoethyl cellulose, carboxymethyl hydroxyl
Ethyl cellulose, methylcellulose, carboxyethylmethylcellulose, hydroxypropyl methyl cellulose, hydroxy butyl methyl cellulose, hydroxyl second
One or more in base cellulose.
As described above, the twin polishing method of the wafer of the present invention, has the advantages that：Pair of the wafer of the present invention
Mirror polish method adds a step finishing polish step, the finishing polish between conventional crude glossing and deionized water cleaning
Step uses precise polishing solution, and polish pressure is the 10~50% of previous rough polishing step polish pressure, is removed within 5 minutes brilliant
The local light-scattering body particle at the circle back side.Particularly, in the finishing polish step, the polymer in precise polishing solution can be in wafer
The back side forms thin polymer film, and the thin polymer film can be effectively by the high-alkali rough polishing of wafer rear and rough polishing step residual
Liquid is isolated, and wafer rear is isolated with the chemical reagent that follow-up hydrophilicity-imparting treatment uses, so as to inhibit the erosion of wafer rear
Carve, improve the local light-scattering body quality and roughness quality of wafer rear.The present invention can also be in the finishing polish step
The precise polishing solution is replaced using the rough polishing solution that with the addition of water-soluble polymer, advantageously reduces cost.In addition, the present invention
The finishing polish step can not be increased, but supply includes polymer while conventional crude glossing supplies rough polishing solution
Precise polishing solution, it can reach similar technique effect.
Brief description of the drawings
Fig. 1-Fig. 2 is shown as the process chart of the twin polishing method of the wafer of the present invention.
Fig. 3 is shown as process chart of the twin polishing method of the wafer of the present invention in embodiment one.
Fig. 4 is shown as process chart of the twin polishing method of the wafer of the present invention in embodiment three.
Fig. 5 is shown as process chart of the twin polishing method of the wafer of the present invention in example IV.
Fig. 6 is shown as process chart of the twin polishing method of the wafer of the present invention in embodiment five.
Component label instructions
S1~S5, S2-1~S2-3 step
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 1 is referred to Fig. 6.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, the component relevant with the present invention is only shown in schema then rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of twin polishing method of wafer, referring to Fig. 1, the process chart of this method is shown as,
Comprise the following steps：
Step S1：By wafer load in the otch of carrier plate, the upper polishing disk covered with upper polishing pad is placed in covering
It is stamped between the lower polishing disk of lower polishing pad.
As an example, the upper polishing pad uses phase same material with lower polishing pad, wafer frontside contacts with upper polishing pad, brilliant
The circle back side contacts with lower polishing pad.
Step S2：The wafer and it is described on supply polishing fluid between polishing pad, lower polishing pad, to the wafer frontside
And the back side is polished, and a thin polymer film is formed in the wafer rear.
Specifically, on the one hand the effect of this step is the polishing for completing wafer frontside and the back side, on the other hand it is to polish
During wafer rear formed a thin polymer film.
Specifically, the polishing of this step can be divided into multiple stages, polishing fluid used in per phase polish and corresponding throwing
Light process conditions can be different, to reach required polishing precision.And the polymerization of the thin polymer film is formed in this step
Thing material may be from polishing fluid used in any polishing stage.
As an example, the polymer includes but is not limited to guar gum, xanthans, cellulose acetate, sulfoethyl fiber
Element, carboxymethyl hydroxyethyl cellulose, methylcellulose, carboxyethylmethylcellulose, hydroxypropyl methyl cellulose, hydroxyl butyl methyl
One or more in cellulose, hydroxyethyl cellulose.
In the present invention, the thin polymer film can be effectively by the high-alkali rough polishing of wafer rear and rough polishing step residual
Liquid is isolated, and wafer rear is isolated with the chemical reagent that follow-up hydrophilicity-imparting treatment uses, and is being polished so as to suppress wafer rear
Continue the high-alkali polishing fluid or chemistry etches remained afterwards, contribute to improve wafer rear local light-scattering body quality and
Roughness quality.
It is pointed out that thin polymer film can be formed at wafer rear and wafer frontside simultaneously, but under normal circumstances,
Wafer rear is no longer polished after twin polishing technique, and wafer frontside can also undergo the follow-up finishing polish stage, because
This, the thin polymer film that wafer frontside is formed has little significance to the quality improving of final wafer frontside, and what wafer rear was formed
Thin polymer film is most important to roughness quality, the local light-scattering body amounts of particles parameter of wafer rear.
Step S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the crystalline substance
Polishing fluid on round, upper polishing pad and lower polishing pad.
Specifically, the deionized water cleaning of this step can be removed and remained on the wafer, upper polishing pad and lower polishing pad
Most of polishing fluid, provide a relatively clean processing environment for subsequent step.And depositing due to the thin polymer film
Polishing fluid is not being removed even if still being remained in the upper polishing pad and lower polishing pad, and the alkali in polishing fluid is also difficult to and wafer
The silicon at the back side reacts, so as to reduce corroding again for wafer rear.
As an example, in the deionized water cleaning process of this step, processing load-bearing is in 0.01~0.05daN/cm2, processing
1~5min of Shi Changwei.
Further, referring to Fig. 2, the twin polishing method of the wafer of the present invention also includes step S4：In the wafer
The supply surface activator solution between the upper polishing pad, lower polishing pad, make the crystal column surface hydrophiling.
Specifically, this step allows crystal column surface hydrophiling to improve the roughness quality and nanometer (Nano) of crystal column surface
Quality.Surfactant has the characteristics such as absorption, wetting, infiltration, scattered, solubilising, and it reduces the basic original of surface tension of liquid
Because being water surface is formed oriented attachment layer by suction-operated, intermolecular work is replaced with the weaker hydrophobic group of inter-molecular attraction
Firmly stronger hydrone, reduce the contact area of air and water, so that the surface tension of water drastically declines.In order to avoid
Ionic soil, nonionic surfactant species is used in this step, from hydrophilic group, is divided into polyol type and Aethoxy Sklerol
Type, polyamine alcohol type surfactant have it is excellent emulsify, solubilising, wetting, diffusion, infiltration and antistatic effect.
Further, the twin polishing method of wafer of the invention also includes step S5：The upper polishing disk is risen, by institute
State wafer and unloaded between the upper polishing disk and the lower polishing disk and set out, and described in being removed using high pressure plasma water gunite
The surfactant remained on upper polishing pad and lower polishing pad.
Specifically, in addition to removing the surfactant remained on the upper polishing pad and lower polishing pad, high pressure etc. from
Sub- water injection can also further remove the surfactant remained on the upper polishing pad and lower polishing pad.Polishing pad is polishing
After a period of time, just there are some polishing particles, polishing fluid crystallization and polishing pad residue is embedding stays in polishing pad groove, these
Will influence polishing fluid polishing pad distribution and cause polishing complete wafer silicon chip surface produce scratch, influence finally into
The yield of product even results in finished product and scrapped.It is therefore desirable to high pressure de-ionized water cleaning is carried out to polishing pad, to rinse out residual
Residue in polishing pad groove causes polishing pad to obtain functional rehabilitation.
So far, the twin polishing of wafer is completed by the method for the present invention, subsequently can further carry out the front of wafer
Finishing polish technique.
The several of twin polishing method for the wafer of the present invention apply example below.
Embodiment one
The present invention provides a kind of twin polishing method of wafer, referring to Fig. 3, the process chart of this method is shown as,
Comprise the following steps：
S1：By wafer load in the otch of carrier plate, be placed in upper polishing disk covered with upper polishing pad with covered with
Between the lower polishing disk of lower polishing pad；
S2-1：Rough polishing is carried out to the wafer in polishing first stage supply rough polishing solution, removes the oxygen of crystal column surface
Change layer；
S2-2：Rough polishing is carried out to the wafer in polishing second stage supply rough polishing solution, removes predetermined amount wafer material
Material；
S2-3：Stop supply rough polishing solution in the polishing phase III, and supply precise polishing solution and smart throwing is carried out to the wafer
Light；Wherein, polymer is included in the precise polishing solution, during finishing polish, the polymer is incorporated into the wafer rear,
Form the thin polymer film.
S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the wafer, on
Polishing fluid on polishing pad and lower polishing pad.
S4：The wafer and it is described on supply surface activator solution between polishing pad, lower polishing pad, make the wafer
Surface hydrophilic；
S5：The upper polishing disk is risen, the wafer is unloaded between the upper polishing disk and the lower polishing disk and set out,
And the surfactant remained on the upper polishing pad and lower polishing pad is removed using high pressure plasma water gunite.
In the present embodiment, the step S2 points are three polishing stages, wherein, the first two stage is two-sided thick with conventional wafer
Glossing is identical, and using rough polishing solution, effect is to remove the oxide layer and removal predetermined amount wafer material of crystal column surface respectively
Material, as an example, the predetermined amount is more than 10 μ m-thicks.And three phases are extra the step of increasing of the invention, equivalent to
A step finishing polish step is added between conventional crude glossing and deionized water cleaning, the finishing polish step uses essence
Polishing fluid.In the finishing polish step, the polymer in precise polishing solution can form thin polymer film, the polymerization in wafer rear
Thing film effectively can isolate wafer rear with the high-alkali rough polishing solution that rough polishing step remains, and by wafer rear and subsequently
The chemical reagent isolation that hydrophilicity-imparting treatment uses, so as to inhibit the etching of wafer rear, improves the local light of wafer rear
Scattering object quality and roughness quality.
Specifically, the difference of the precise polishing solution and the rough polishing solution is, comprising poly- in the precise polishing solution
Compound.As an example, one kind that the abrasive material in the rough polishing solution includes but is not limited in silica, aluminum oxide and cerium oxide or
A variety of, average grit diameter scope is 10-100nm；Abrasive material in the precise polishing solution includes but is not limited to silica, aluminum oxide
With the one or more in cerium oxide, average grit diameter scope is 30-60nm.Polymer in the precise polishing solution include but
Be not limited to guar gum, xanthans, cellulose acetate, sulfoethyl cellulose, carboxymethyl hydroxyethyl cellulose, methylcellulose,
One kind or more in carboxyethylmethylcellulose, hydroxypropyl methyl cellulose, hydroxy butyl methyl cellulose, hydroxyethyl cellulose
Kind.
Certainly, water, surfactant, alkali compounds etc. are also included in the rough polishing solution and precise polishing solution, this is this
Known to art personnel, should not too it limit the scope of the invention herein.
As an example, in the step S2-1 and step S2-2, the rough polishing solution is circulation rough polishing solution；It can lead to
Addition KOH is crossed so that the pH value of circulation rough polishing solution is maintained in the range of 10.5~11.In the step S2-3, the essence is thrown
Light liquid does not enter circulation, i.e., constantly supplies new precise polishing solution, and discarded precise polishing solution no longer re-uses in this step.
As an example, in the step S2-1, the polish pressure scope that is loaded on the wafer is 0.01~
0.20daN/cm2, a length of 1~5min during polishing；In the step S2-2, the polish pressure scope that is loaded on the wafer
It is 0.01~0.20daN/cm2, a length of 20~40min during polishing；In the step S2-3, the throwing that is loaded on the wafer
Light pressure scope is 0.01~0.05daN/cm2, the 10~50% of preferably previous rough polishing step polish pressure, polish duration
For 1~5min.
As an example, in step S2-1, S2-2 or S2-3, the rotary speed of the upper polishing disk for 20~
40rpm, the rotary speed of the lower polishing disk is -10~-40rpm.
The twin polishing method of the wafer of the present embodiment increases between conventional crude glossing and deionized water cleaning
A step finishing polish step is added, the finishing polish step uses precise polishing solution, and polish pressure is previous rough polishing step polish pressure
10~50%, within 5 minutes remove wafer rear local light-scattering body particle.Particularly, in the finishing polish step,
Polymer in precise polishing solution can form thin polymer film in wafer rear, and the thin polymer film can be effectively by wafer rear
Isolate with the high-alkali rough polishing solution of rough polishing step residual, and the chemical reagent that wafer rear and follow-up hydrophilicity-imparting treatment are used
Isolation, so as to inhibit the etching of wafer rear, improves local light-scattering body (LLS) quality and roughness product of wafer rear
Matter.
Embodiment two
The present embodiment uses essentially identical technical scheme with embodiment one, and difference is, in embodiment one, step
Abrasive material is included used by S2-3 in precise polishing solution, and in the present embodiment, used by step S2-3 precise polishing solution be not comprising
The polishing agent solution of abrasive material.
Because step S2-3 main function is to form thin polymer film, therefore even if the precise polishing solution in wafer rear
In do not include abrasive material, also can reach the purpose.In addition, step S2-1 and step S2-2 can also remain in polishing pad and crystal column surface
Many abrasive grains, the polishing agent solution are combined with these abrasive grains, can equally play step S2-3 in embodiment one
Remove the purpose of local light-scattering body particle.
Embodiment three
The present invention provides a kind of twin polishing method of wafer, referring to Fig. 4, the process chart of this method is shown as,
Comprise the following steps：
S1：By wafer load in the otch of carrier plate, be placed in upper polishing disk covered with upper polishing pad with covered with
Between the lower polishing disk of lower polishing pad；
S2-1：The wafer is polished in polishing first stage supply rough polishing solution, removes the oxidation of crystal column surface
Layer；
S2-2：The wafer is polished in polishing second stage supply rough polishing solution, removes predetermined amount wafer material；
S2-3：The wafer is thrown in rough polishing solution of the polishing phase III supply added with water-soluble polymer
Light, in polishing process, the polymer is incorporated into the wafer rear, forms the thin polymer film.
S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the wafer, on
Polishing fluid on polishing pad and lower polishing pad.
S4：The wafer and it is described on supply surface activator solution between polishing pad, lower polishing pad, make the wafer
Surface hydrophilic；
S5：The upper polishing disk is risen, the wafer is unloaded between the upper polishing disk and the lower polishing disk and set out,
And the surfactant remained on the upper polishing pad and lower polishing pad is removed using high pressure plasma water gunite.
The present embodiment and the difference of embodiment one and embodiment two be, finishing polish of the present embodiment in step S2-3
The precise polishing solution is replaced using the rough polishing solution that with the addition of water-soluble polymer in step, advantageously reduces cost.
As an example, in the step S2-3, the addition of the water-soluble polymer is less than 1wt%, described in addition
After water-soluble polymer, the viscosity of the rough polishing solution is 5-15cps.Abrasive material in the rough polishing solution includes silica, oxygen
Change the one or more in aluminium and cerium oxide.
As an example, in the step S2-1 and step S2-2, the rough polishing solution is circulation rough polishing solution；In institute
State in step S2-3, the rough polishing solution raw material of the rough polishing solution that with the addition of water-soluble polymer can use new rough polishing
Liquid, can also use the rough polishing solution that is circulated throughout before, but it is polished after, the rough polishing added with water-soluble polymer
Liquid does not enter back into circulation, in order to avoid interference is produced to the step S2-1 and S2-2 during other polishing wafers.
The twin polishing method of the wafer of the present embodiment can reach and embodiment one and the basic identical technology of embodiment two
Effect, thin polymer film is formed in wafer rear, the thin polymer film effectively can remain wafer rear and rough polishing step
The isolation of high-alkali rough polishing solution, and wafer rear is isolated with the chemical reagent that follow-up hydrophilicity-imparting treatment uses, so as to inhibit
The etching of wafer rear, improve the local light-scattering body quality and roughness quality of wafer rear.
Example IV
The present invention provides a kind of twin polishing method of wafer, referring to Fig. 5, the process chart of this method is shown as,
Comprise the following steps：
S1：By wafer load in the otch of carrier plate, be placed in upper polishing disk covered with upper polishing pad with covered with
Between the lower polishing disk of lower polishing pad；
S2-1：The wafer is polished in polishing first stage supply rough polishing solution, removes the oxidation of crystal column surface
Layer；
S2-2：Rough polishing solution and precise polishing solution are supplied in polishing second stage simultaneously to be polished the wafer, are removed
Predetermined amount wafer material；Polymer is included in the precise polishing solution, in polishing process, the polymer is incorporated into the wafer
The back side, form the thin polymer film.
S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the wafer, on
Polishing fluid on polishing pad and lower polishing pad.
S4：The wafer and it is described on supply surface activator solution between polishing pad, lower polishing pad, make the wafer
Surface hydrophilic；
S5：The upper polishing disk is risen, the wafer is unloaded between the upper polishing disk and the lower polishing disk and set out,
And the surfactant remained on the upper polishing pad and lower polishing pad is removed using high pressure plasma water gunite.
The present embodiment and the difference of embodiment one, embodiment two and embodiment three are that the present embodiment can not increase
The finishing polish step, but rough polishing solution and precise polishing solution comprising polymer are supplied simultaneously in polishing second stage.
As an example, the abrasive material in the rough polishing solution or precise polishing solution includes but is not limited to silica, aluminum oxide and oxygen
Change the one or more in cerium.
The step S2-2 is the main technological process of wafer twin polishing, and effect is to remove the wafer material of predetermined amount.By
In supplying rough polishing solution and precise polishing solution simultaneously in step S2-2, in polishing fluid the presence of polymer reduce in polishing fluid
Chemical action and mechanism between alkali and abrasive material and wafer, therefore relative to embodiment one, embodiment two and embodiment three,
The polishing velocity of the present embodiment decreases, but quality of finish increases, and can equally be formed and polymerize in wafer rear
Nitride layer, effectively wafer rear is isolated with the high-alkali rough polishing solution that rough polishing step remains, and by wafer rear with it is follow-up hydrophilic
Change the chemical reagent isolation that processing uses, so as to inhibit the etching of wafer rear, improve the local light scattering of wafer rear
Body quality and roughness quality.
Embodiment five
The present invention provides a kind of twin polishing method of wafer, referring to Fig. 6, the process chart of this method is shown as,
Comprise the following steps：
S1：By wafer load in the otch of carrier plate, be placed in upper polishing disk covered with upper polishing pad with covered with
Between the lower polishing disk of lower polishing pad；
S2-1：Rough polishing solution and precise polishing solution are supplied in the polishing first stage simultaneously to be polished the wafer, are removed
The oxide layer of crystal column surface；
S2-2：Rough polishing solution and precise polishing solution are supplied in polishing second stage simultaneously to be polished the wafer, are removed
Predetermined amount wafer material；Polymer is included in the precise polishing solution, in polishing process, the polymer is incorporated into the wafer
The back side, form the thin polymer film.
S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the wafer, on
Polishing fluid on polishing pad and lower polishing pad.
S4：The wafer and it is described on supply surface activator solution between polishing pad, lower polishing pad, make the wafer
Surface hydrophilic；
S5：The upper polishing disk is risen, the wafer is unloaded between the upper polishing disk and the lower polishing disk and set out,
And the surfactant remained on the upper polishing pad and lower polishing pad is removed using high pressure plasma water gunite.
The present embodiment uses essentially identical technical scheme with example IV, and difference is, in the present embodiment, step
S2-1 and step S2-2 supply rough polishing solution and precise polishing solution simultaneously, can reach with example IV similar in technique effect.
In summary, the twin polishing method of wafer of the invention is in conventional crude glossing and deionized water cleaning
Between add a step finishing polish step, the finishing polish step uses precise polishing solution, and polish pressure is that previous rough polishing step is thrown
The 10~50% of light pressure, the local light-scattering body particle of wafer rear was removed within 5 minutes.Particularly, in the finishing polish
In step, polymer in precise polishing solution can form thin polymer film in wafer rear, the thin polymer film can effectively by
Wafer rear is isolated with the high-alkali rough polishing solution that rough polishing step remains, and wafer rear and follow-up hydrophilicity-imparting treatment are used
Chemical reagent is isolated, and so as to inhibit the etching of wafer rear, improves the local light-scattering body quality of wafer rear and coarse
Spend quality.The present invention can also replace the essence in the finishing polish step using the rough polishing solution that with the addition of water-soluble polymer
Polishing fluid, advantageously reduce cost.In addition, the present invention can not also increase the finishing polish step, but in conventional crude buffer
Supply includes the precise polishing solution of polymer while skill supplies rough polishing solution, can reach similar technique effect.So present invention
Effectively overcome various shortcoming of the prior art and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (18)
1. a kind of twin polishing method of wafer, it is characterised in that comprise the following steps：
S1：By wafer load in the otch of carrier plate, be placed in upper polishing disk covered with upper polishing pad with covered with lower throwing
Between the lower polishing disk of light pad；
S2：The wafer and it is described on supply polishing fluid between polishing pad, lower polishing pad, the wafer frontside and the back side are entered
Row polishing, and form a thin polymer film in the wafer rear；
S3：The wafer and it is described on supply deionized water between polishing pad, lower polishing pad, remove the wafer, upper polishing
Polishing fluid on pad and lower polishing pad.
2. the twin polishing method of wafer according to claim 1, it is characterised in that：The step S2 includes：
S2-1：Rough polishing is carried out to the wafer in polishing first stage supply rough polishing solution, removes the oxide layer of crystal column surface；
S2-2：Rough polishing is carried out to the wafer in polishing second stage supply rough polishing solution, removes predetermined amount wafer material；
S2-3：Stop supply rough polishing solution in the polishing phase III, and supply precise polishing solution and finishing polish is carried out to the wafer；Its
In, polymer is included in the precise polishing solution, during finishing polish, the polymer is incorporated into the wafer rear, forms
The thin polymer film.
3. the twin polishing method of wafer according to claim 2, it is characterised in that：Abrasive material bag in the rough polishing solution
Include the one or more in silica, aluminum oxide and cerium oxide；Abrasive material in the precise polishing solution include silica, aluminum oxide and
One or more in cerium oxide, or the precise polishing solution are the polishing agent solution not comprising abrasive material.
4. the twin polishing method of wafer according to claim 2, it is characterised in that：In the step S2-1 and step
In S2-2, the rough polishing solution is circulation rough polishing solution；In the step S2-3, the precise polishing solution does not enter circulation.
5. the twin polishing method of wafer according to claim 4, it is characterised in that：It is thick by adding KOH circulations
The pH value of polishing fluid is maintained in the range of 10.5~11.
6. the twin polishing method of wafer according to claim 2, it is characterised in that：In the step S2-1, loading
Polish pressure scope on to the wafer is 0.01~0.20daN/cm2, a length of 1~5min during polishing；In the step S2-
In 2, the polish pressure scope being loaded on the wafer is 0.01~0.20daN/cm2, a length of 20~40min during polishing；In
In the step S2-3, the polish pressure scope being loaded on the wafer is 0.01~0.05daN/cm2, a length of 1 during polishing
~5min.
7. the twin polishing method of wafer according to claim 2, it is characterised in that：In step S2-1, S2-2 or
In S2-3, the rotary speed of the upper polishing disk is 20~40rpm, and the rotary speed of the lower polishing disk is -10~-40rpm.
8. the twin polishing method of wafer according to claim 1, it is characterised in that：The step S2 includes：
S2-1：The wafer is polished in polishing first stage supply rough polishing solution, removes the oxide layer of crystal column surface；
S2-2：The wafer is polished in polishing second stage supply rough polishing solution, removes predetermined amount wafer material；
S2-3：The wafer is polished in rough polishing solution of the polishing phase III supply added with water-soluble polymer,
In polishing process, the polymer is incorporated into the wafer rear, forms the thin polymer film.
9. the twin polishing method of wafer according to claim 8, it is characterised in that：It is described in the step S2-3
The addition of water-soluble polymer is less than 1wt%, and after adding the water-soluble polymer, the viscosity of the rough polishing solution is 5-
15cps。
10. the twin polishing method of wafer according to claim 8, it is characterised in that：Abrasive material in the rough polishing solution
Including the one or more in silica, aluminum oxide and cerium oxide.
11. the twin polishing method of wafer according to claim 8, it is characterised in that：In the step S2-1 and step
In S2-2, the rough polishing solution is circulation rough polishing solution；It is described added with water-soluble polymer in the step S2-3
Rough polishing solution does not enter circulation.
12. the twin polishing method of wafer according to claim 1, it is characterised in that：The step S2 includes：
S2-1：The wafer is polished in polishing first stage supply rough polishing solution, removes the oxide layer of crystal column surface；
S2-2：Rough polishing solution and precise polishing solution are supplied in polishing second stage simultaneously to be polished the wafer, are removed default
Measure wafer material；Polymer is included in the precise polishing solution, in polishing process, the polymer is incorporated into the wafer back of the body
Face, form the thin polymer film.
13. the twin polishing method of wafer according to claim 12, it is characterised in that：The rough polishing solution or finishing polish
Abrasive material in liquid includes the one or more in silica, aluminum oxide and cerium oxide.
14. the twin polishing method of wafer according to claim 1, it is characterised in that：The step S2 includes：
S2-1：Rough polishing solution and precise polishing solution are supplied in the polishing first stage simultaneously to be polished the wafer, remove wafer
The oxide layer on surface；
S2-2：Rough polishing solution and precise polishing solution are supplied in polishing second stage simultaneously to be polished the wafer, are removed default
Measure wafer material；Polymer is included in the precise polishing solution, in polishing process, the polymer is incorporated into the wafer back of the body
Face, form the thin polymer film.
15. the twin polishing method of wafer according to claim 14, it is characterised in that：The rough polishing solution or finishing polish
Abrasive material in liquid includes the one or more in silica, aluminum oxide and cerium oxide.
16. the twin polishing method of the wafer according to claim 1~15 any one, it is characterised in that：Also include step
Rapid S4：The wafer and it is described on supply surface activator solution between polishing pad, the second polishing pad, make the crystal column surface
Hydrophiling.
17. the twin polishing method of wafer according to claim 16, it is characterised in that：Also include step S5：Rise institute
Polishing disk is stated, the wafer is unloaded between the upper polishing disk and the lower polishing disk and set out, and uses high pressure plasma
Water gunite removes the surfactant remained on the upper polishing pad and lower polishing pad.
18. the twin polishing method of the wafer according to claim 1~15 any one, it is characterised in that：The polymerization
Thing include guar gum, xanthans, cellulose acetate, sulfoethyl cellulose, carboxymethyl hydroxyethyl cellulose, methylcellulose,
One kind or more in carboxyethylmethylcellulose, hydroxypropyl methyl cellulose, hydroxy butyl methyl cellulose, hydroxyethyl cellulose
Kind.
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| TW105133111A TWI614801B (en) | 2016-05-18 | 2016-10-13 | Method for a double side polishing of a semiconductor wafer |
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Also Published As
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| CN107398780B (en) | 2020-03-31 |
| TWI614801B (en) | 2018-02-11 |
| TW201742135A (en) | 2017-12-01 |
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