CN104015123A - Double-sided polishing process for sapphire panel - Google Patents
Double-sided polishing process for sapphire panel Download PDFInfo
- Publication number
- CN104015123A CN104015123A CN201410272924.7A CN201410272924A CN104015123A CN 104015123 A CN104015123 A CN 104015123A CN 201410272924 A CN201410272924 A CN 201410272924A CN 104015123 A CN104015123 A CN 104015123A
- Authority
- CN
- China
- Prior art keywords
- polishing
- polishing disk
- disk
- sapphire panel
- sapphire
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
Abstract
The invention discloses a double-sided polishing process for a sapphire panel. The process comprises the first step of clamping and placing the sapphire panel onto a lower polishing disk, wherein polyurethane polishing pads are pasted on the surfaces of an upper polishing disk and the lower polishing disk and used for polishing the surfaces of the sapphire panel, the second step of controlling the upper polishing disk to move downwards until the upper polishing disk and the lower polishing disk are tightly attached to the upper surface and the lower surface of the sapphire panel, and the third step of controlling the upper polishing disk and the lower polishing disk to rotate reversely, injecting a polishing solution, polishing the upper surface and the lower surface of the sapphire panel through the polishing pads at the same time and meanwhile performing pressurization on the upper surface of the sapphire panel through the upper polishing disk, wherein either the rotation speed of the upper polishing disk and the lower polishing disk or the pressure on the upper polishing disk is variable at least. According to the double-sided polishing process for the sapphire panel, the polishing removal rate is effectively increased, polishing time is shortened, polishing efficiency is enhanced, and production cost is reduced; furthermore, scratches caused by surface grinding can be removed, the shining and thorough effects through polishing can be achieved, and the value Sa of surface roughness is smaller than 0.40 nm.
Description
Technical field
The invention belongs to the processing technique field of sapphire panel, be specifically related to a kind of twin polishing technique of sapphire panel.
Background technology
Sapphire is a kind of multi-functional oxide crystal that integrates good optical property, physical property and chemical property, the sapphire tool of Artificial Growth has good wearability, hardness is only second to diamond and reaches 9 grades of Mohs, sapphire compactness makes it have larger surface tension simultaneously, and above-mentioned characteristic is very suitable for the electronic touch panels such as mobile phone, wrist-watch, camera.
In order to meet the requirement of sapphire optics development, acquisition height is smooth, the surface of high brightness, must carry out chemically mechanical polishing to sapphire, to reduce or eliminate the scuffing to sapphire panel in to operations such as sapphire cutting, grindings, obtain the product of high-flatness, high brightness.
Polishing technique to the touch panel taking sapphire as material at present, all adopt conventional single-sided polishing technique, first paste the A face of fixed panel, polishing another side B face, then the bonding B that comes unglued conversely carries out polishing in the face of A face, and long processing time, complex process and the polishing effect of this technique are not good.
China patent application CN201310605267.9 discloses a kind of sapphire touch panel polishing both surfaces method, adopts the two-sided while polishing that is different from traditional handicraft to obtain a kind of simple, low, efficient finishing method of cost.But the method adopts nonwoven as grinding pad, sapphire extreme hardness, such grinding pad is not wear-resisting, and grinding pad loss is very serious, and the method rotating speed is low, pressure is little, temperature is low, can only be used for C to polishing, unsatisfactory to the effect of sapphire polishing.
Summary of the invention
The technical problem that the present invention solves is: the twin polishing technique that a kind of optical grade sapphire touch panel is provided, not only can meet the processing request of sapphire touch panel polished surface flatness, roughness, and technique is simple, use twin polishing technique, enhance productivity, can effectively cut down finished cost.
The present invention adopts following technical scheme to realize: a kind of twin polishing technique of sapphire panel, comprise the steps: the first step, sapphire panel clamping is placed on lower polishing disk, the surface of described upper and lower polishing disk is pasted with polyurethane polishing pad for sapphire surface is carried out to polishing; In second step, control, polishing disk is displaced downwardly to lower polishing disk and is close to the upper and lower surface of sapphire panel; The 3rd step, control upper and lower polishing disk and rotate backward, inject polishing fluid simultaneously, by polishing pad to the polishing simultaneously of the upper and lower surface of sapphire, go up polishing disk pressurizes to sapphire panel upper surface simultaneously, wherein, the rotating speed of upper and lower polishing disk or the pressure of upper polishing disk, at least wherein have one to change.
Further, described sapphire panel is placed in the erratic star wheel die cavity of Twp-sided polishing machine, and the gear teeth on erratic star wheel engage with gear ring and the sun gear of Twp-sided polishing machine respectively, engages the rotation and the revolution that realize erratic star wheel by planetary gear.
As another kind of preferred version of the present invention, the rotating speed of upper and lower polishing disk in described the 3rd step and the pressure of upper polishing disk all adopt the variation pattern progressively increasing progressively that the boost in pressure of the rotating speed of upper and lower polishing disk and upper polishing disk to maximum and maintenance carried out to normal polishing, in the later stage of polishing, adopt again the variation pattern progressively successively decreasing to reduce rotating speed and pressure, wherein, upper polishing disk to the pressure of sapphire panel at 0.28-0.35g/cm
2between change, the rotating speed of described upper polishing disk is along with the variation of upper polishing disk pressure changes between 5-30rpm, the rotating speed of described lower polishing disk is along with the variation of upper polishing disk pressure changes between 8-40rpm.
Concrete, described upper polishing disk to the pressure of sapphire panel according to 0-0.09g/cm
2amplitude increase progressively and successively decrease, first the rotating speed of described upper and lower polishing disk increases progressively according to the amplitude of 0-10rpm, after upper polishing disk reaches maximum to the pressure of sapphire panel, successively decreases according to the amplitude of 0-15rpm.
Further, between the upper polishing disk in described the 3rd step and sapphire panel, pass into the polishing fluid that flow is 10-12L/min, between lower polishing disk and sapphire panel, pass into the polishing fluid that flow is 9-10L/min.
In the present invention, described polishing fluid is SiO
2polishing fluid.
Further, the SiO in described polishing fluid
2particle diameter be 95nm.
Further, in the polishing process in described the 3rd step, polish temperature is controlled between 35-50 DEG C.
Because sapphire panel polishing front surface flatness is poor, suddenly apply larger pressure and can make panel ruptures, therefore the present invention adopts and first adopts little pressure that panel flatness is improved, and increases gradually pressure, carry out polishing operation by constant pressure again, ensure the stability of polishing.The present invention adopts polishing disk to carry out polishing in conjunction with the mode of polyurethane polishing pad pressure changeable, variable speed to coarse sapphire sheet; and carry out polishing in conjunction with the polishing fluid of large particle diameter, large flow auxiliary; two faces of disposable polishing sapphire sheet; can effectively increase polish removal rate; shorten the time of polishing; improve the efficiency of polishing, can, under the prerequisite of protection quality of finish, effectively improve polishing efficiency and yield.The sapphire panel obtaining according to glossing of the present invention, disposable qualification rate is greater than 90%, and the surface roughness of panel is less than 0.5nm, and flatness is less than 5um, be less than ± 0.03um of thickness dimensional tolerance.By adjusting the rotation speed change of upper and lower polishing disk, can obtain the different roughness of polished in sapphire panel two sides, be conducive to the cladding process of follow-up contact panel.And in conjunction with sapphire crystal orientation characteristic, can prepare large-size sapphire touch panel, eliminate the machining damage layer of panel surface, obtain complete lattice surface, can reach the glossing requirement of surface smoothness < 5um, burnishing surface roughness < 0.5nm.
Below in conjunction with detailed description of the invention, the present invention will be further described.
Detailed description of the invention
Embodiment 1
A kind of twin polishing technique of sapphire panel, comprise the steps: the first step, sapphire panel clamping is placed between upper and lower polishing disk, described sapphire panel is placed in the erratic star wheel die cavity of Twp-sided polishing machine, the gear teeth on erratic star wheel engage with gear ring and the sun gear of Twp-sided polishing machine respectively, engage the rotation and the revolution that realize erratic star wheel by planetary gear, smear polishing fluid at described sapphire panel surface, the surface of described upper and lower polishing disk is pasted with polyurethane polishing pad for sapphire surface is carried out to polishing; In second step, control, polishing disk is displaced downwardly to lower polishing disk and is close to the upper and lower surface of sapphire panel; The 3rd step, control upper and lower polishing disk and rotate backward, by polishing pad, polishing is carried out in the upper and lower surface of sapphire simultaneously, go up polishing disk pressurizes to sapphire panel upper surface simultaneously, wherein, the rotating speed of upper and lower polishing disk in described the 3rd step and the pressure of upper polishing disk all adopt and first increase progressively the variation pattern successively decreasing afterwards, wherein, upper polishing disk to the pressure of sapphire panel at 0.05-0.3g/cm
2between change, the rotating speed of described upper polishing disk is along with the variation of upper polishing disk pressure changes between 5-30rpm, the rotating speed of described lower polishing disk is along with the variation of upper polishing disk pressure changes between 8-40rpm.Wherein, polishing fluid adopts the SiO that particle diameter is 95nm
2polishing fluid, by controlling the amount control polish temperature of polishing fluid between 35-50 DEG C.
Concrete operation is as follows: sapphire sheet is placed between upper and lower polishing disk, tentatively controls upthrow CD speed lower than lower polishing disk rotating speed.
Further, the polishing fluid feed speed of controlling between sapphire panel upper surface and upper polishing disk is greater than the polishing fluid feed speed between lower surface and lower polishing disk.
Polishing process in above-mentioned the 3rd step is divided into following 10 stages and carries out polishing:
First stage: the pressure of upper polishing disk is controlled at 0.05-0.07g/cm
2, upthrow CD speed is controlled at 5-8rpm, and the polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 8-10rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
Second stage: the pressure of upper polishing disk is controlled at 0.07-0.09g/cm
2upthrow CD speed is controlled at 8-12rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 10-15rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
Phase III: the pressure of upper polishing disk is controlled at 0.09-0.12g/cm
2upthrow CD speed is controlled at 12-16rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 15-20rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
Fourth stage: the pressure of upper polishing disk is controlled at 0.12-0.16g/cm
2upthrow CD speed is controlled at 16-20rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 20-25rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
Five-stage: the pressure of upper polishing disk is controlled at 0.16-0.2g/cm
2upthrow CD speed is controlled at 18-22rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 25-30rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
The 6th stage: the pressure of upper polishing disk is controlled at 0.2-0.26g/cm
2upthrow CD speed is controlled at 20-25rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 30-35rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
The 7th stage: the pressure of upper polishing disk is controlled at 0.26-0.3g/cm
2upthrow CD speed is controlled at 25-30rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 35-40rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
The 8th stage: the pressure of upper polishing disk is controlled at 0.2-0.26g/cm
2upthrow CD speed is controlled at 15-25rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 30-35rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
The 9th stage: the pressure of upper polishing disk is controlled at 0.16-0.2g/cm
2upthrow CD speed is controlled at 10-20rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 20-30rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min;
The tenth stage: the pressure of upper polishing disk is controlled at 0.09-0.16g/cm
2upthrow CD speed is controlled at 8-16rpm, polishing fluid flow-control between upper polishing disk and sapphire panel is at 10-12L/min, and lower polishing disk rotating speed is controlled at 10-20rpm, and the polishing fluid flow-control before lower polishing disk and sapphire panel is at 9-10L/min.
Wherein six stages of first stage to the are polishing starting stage, and progressively the rotating speed to polishing disk and pressure increase progressively, and keep after reaching the maximum in the 7th stage, ensure the quality of sapphire panel polishing; The later stage of polishing was the 8th 0 stages of stage to the.
The sapphire touch panel obtaining according to glossing in the present embodiment, first-time qualification rate is more than 95%, and the surface roughness of sapphire panel is 0.4nm, and flatness is 5um, and thickness dimensional tolerance is 0.03mm.
Claims (8)
1. the twin polishing technique of a sapphire panel, it is characterized in that comprising the steps: the first step, sapphire panel clamping is placed on lower polishing disk, the surface of described upper and lower polishing disk is pasted with polyurethane polishing pad for sapphire surface is carried out to polishing; In second step, control, polishing disk is displaced downwardly to lower polishing disk and is close to the upper and lower surface of sapphire panel; The 3rd step, control upper and lower polishing disk and rotate backward, inject polishing fluid simultaneously, by polishing pad to the polishing simultaneously of the upper and lower surface of sapphire, go up polishing disk pressurizes to sapphire panel upper surface simultaneously, wherein, the rotating speed of upper and lower polishing disk or the pressure of upper polishing disk, at least wherein have one to change.
2. the twin polishing technique of a kind of sapphire panel according to claim 1, it is characterized in that: described sapphire panel is placed in the erratic star wheel die cavity of Twp-sided polishing machine, the gear teeth on erratic star wheel engage with gear ring and the sun gear of Twp-sided polishing machine respectively, engage the rotation and the revolution that realize erratic star wheel by planetary gear.
3. the twin polishing technique of a kind of sapphire panel according to claim 2, it is characterized in that: the rotating speed of upper and lower polishing disk in described the 3rd step and the pressure of upper polishing disk all adopt and first increases progressively the variation pattern successively decreasing afterwards, wherein, upper polishing disk to the pressure of sapphire panel at 0.05-0.3g/cm
2between change, the rotating speed of described upper polishing disk is along with the variation of upper polishing disk pressure changes between 5-30rpm, the rotating speed of described lower polishing disk is along with the variation of upper polishing disk pressure changes between 8-40rpm.
4. the twin polishing technique of a kind of sapphire panel according to claim 3, is characterized in that: described upper polishing disk to the pressure of sapphire panel according to 0-0.09g/cm
2amplitude increase progressively and successively decrease, first the rotating speed of described upper and lower polishing disk increases progressively according to the amplitude of 0-10rpm, after upper polishing disk reaches maximum to the pressure of sapphire panel, successively decreases according to the amplitude of 0-15rpm.
5. the twin polishing technique of a kind of sapphire panel according to claim 4, it is characterized in that: between the upper polishing disk in described the 3rd step and sapphire panel, pass into the polishing fluid that flow is 10-12L/min, between lower polishing disk and sapphire panel, pass into the polishing fluid that flow is 9-10L/min.
6. according to the twin polishing technique of a kind of sapphire panel described in any one in claim 1-5, it is characterized in that: described polishing fluid is SiO
2polishing fluid.
7. the twin polishing technique of a kind of sapphire panel according to claim 6, is characterized in that: the SiO in described polishing fluid
2particle diameter be 95nm.
8. the twin polishing technique of a kind of sapphire panel according to claim 7, is characterized in that: in the polishing process in described the 3rd step, polish temperature is controlled between 35-50 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410272924.7A CN104015123A (en) | 2014-06-18 | 2014-06-18 | Double-sided polishing process for sapphire panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410272924.7A CN104015123A (en) | 2014-06-18 | 2014-06-18 | Double-sided polishing process for sapphire panel |
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| CN104015123A true CN104015123A (en) | 2014-09-03 |
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| CN201410272924.7A Pending CN104015123A (en) | 2014-06-18 | 2014-06-18 | Double-sided polishing process for sapphire panel |
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Cited By (10)
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| CN104830236A (en) * | 2015-05-14 | 2015-08-12 | 蓝思科技（长沙）有限公司 | C-axis sapphire polishing solution and preparation method thereof |
| CN105058229A (en) * | 2015-08-18 | 2015-11-18 | 浙江工业大学 | Modified planar rolling method and device |
| CN106466808A (en) * | 2016-09-23 | 2017-03-01 | 江苏吉星新材料有限公司 | A kind of thinning processing method of twin grinding pad sapphire window piece |
| CN107225483A (en) * | 2017-07-04 | 2017-10-03 | 苏州亨达尔工业材料有限公司 | A kind of synchronous burnishing device of sheet material double face |
| CN107309784A (en) * | 2017-09-03 | 2017-11-03 | 湖北天宝光电科技有限公司 | A kind of two-sided fine grinding technology of sapphire cover plate |
| CN107398780A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of twin polishing method of wafer |
| CN107978522A (en) * | 2017-12-11 | 2018-05-01 | 中国电子科技集团公司第四十六研究所 | A kind of rough polishing technique for reducing GaAs double-polished chip integral smoothness |
| CN110752143A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Process for improving flatness of sapphire substrate |
| CN112466998A (en) * | 2020-12-09 | 2021-03-09 | 中国电子科技集团公司第四十六研究所 | Manufacturing method of four-inch 80-micron gallium arsenide double polished wafer |
| CN114309920A (en) * | 2021-12-23 | 2022-04-12 | 潮州三环（集团）股份有限公司 | Ceramic cleaver and preparation method thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104830236A (en) * | 2015-05-14 | 2015-08-12 | 蓝思科技（长沙）有限公司 | C-axis sapphire polishing solution and preparation method thereof |
| CN105058229A (en) * | 2015-08-18 | 2015-11-18 | 浙江工业大学 | Modified planar rolling method and device |
| CN107398780A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of twin polishing method of wafer |
| CN107398780B (en) * | 2016-05-18 | 2020-03-31 | 上海新昇半导体科技有限公司 | Double-side polishing method for wafer |
| CN106466808A (en) * | 2016-09-23 | 2017-03-01 | 江苏吉星新材料有限公司 | A kind of thinning processing method of twin grinding pad sapphire window piece |
| CN107225483A (en) * | 2017-07-04 | 2017-10-03 | 苏州亨达尔工业材料有限公司 | A kind of synchronous burnishing device of sheet material double face |
| CN107309784A (en) * | 2017-09-03 | 2017-11-03 | 湖北天宝光电科技有限公司 | A kind of two-sided fine grinding technology of sapphire cover plate |
| CN107978522A (en) * | 2017-12-11 | 2018-05-01 | 中国电子科技集团公司第四十六研究所 | A kind of rough polishing technique for reducing GaAs double-polished chip integral smoothness |
| CN107978522B (en) * | 2017-12-11 | 2019-09-03 | 中国电子科技集团公司第四十六研究所 | A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness |
| CN110752143A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Process for improving flatness of sapphire substrate |
| CN112466998A (en) * | 2020-12-09 | 2021-03-09 | 中国电子科技集团公司第四十六研究所 | Manufacturing method of four-inch 80-micron gallium arsenide double polished wafer |
| CN112466998B (en) * | 2020-12-09 | 2022-08-12 | 中国电子科技集团公司第四十六研究所 | Manufacturing method of four-inch 80-micron gallium arsenide double polished wafer |
| CN114309920A (en) * | 2021-12-23 | 2022-04-12 | 潮州三环（集团）股份有限公司 | Ceramic cleaver and preparation method thereof |
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Application publication date: 20140903 |